TWI309190B - Method of using a soft subpad for chemical mechanical polishing - Google Patents

Method of using a soft subpad for chemical mechanical polishing Download PDF

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Publication number
TWI309190B
TWI309190B TW092136717A TW92136717A TWI309190B TW I309190 B TWI309190 B TW I309190B TW 092136717 A TW092136717 A TW 092136717A TW 92136717 A TW92136717 A TW 92136717A TW I309190 B TWI309190 B TW I309190B
Authority
TW
Taiwan
Prior art keywords
wafer
abrasive
lower layer
fixed abrasive
shore
Prior art date
Application number
TW092136717A
Other languages
English (en)
Chinese (zh)
Other versions
TW200416107A (en
Inventor
John James Gagliardi
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of TW200416107A publication Critical patent/TW200416107A/zh
Application granted granted Critical
Publication of TWI309190B publication Critical patent/TWI309190B/zh

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245Pads with fixed abrasives
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/22Lapping pads for working plane surfaces characterised by a multi-layered structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
TW092136717A 2003-01-10 2003-12-24 Method of using a soft subpad for chemical mechanical polishing TWI309190B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/339,963 US6908366B2 (en) 2003-01-10 2003-01-10 Method of using a soft subpad for chemical mechanical polishing

Publications (2)

Publication Number Publication Date
TW200416107A TW200416107A (en) 2004-09-01
TWI309190B true TWI309190B (en) 2009-05-01

Family

ID=32711209

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092136717A TWI309190B (en) 2003-01-10 2003-12-24 Method of using a soft subpad for chemical mechanical polishing

Country Status (9)

Country Link
US (1) US6908366B2 (https=)
EP (1) EP1583639A1 (https=)
JP (1) JP2006513571A (https=)
KR (1) KR101062088B1 (https=)
CN (1) CN1735481B (https=)
AU (1) AU2003290921A1 (https=)
MY (1) MY136807A (https=)
TW (1) TWI309190B (https=)
WO (1) WO2004062853A1 (https=)

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US20040209066A1 (en) * 2003-04-17 2004-10-21 Swisher Robert G. Polishing pad with window for planarization
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US7320928B2 (en) * 2003-06-20 2008-01-22 Intel Corporation Method of forming a stacked device filler
US7198549B2 (en) * 2004-06-16 2007-04-03 Cabot Microelectronics Corporation Continuous contour polishing of a multi-material surface
US20060089095A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060089093A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060089094A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US6997785B1 (en) 2004-12-23 2006-02-14 3M Innovative Properties Company Wafer planarization composition and method of use
US7179159B2 (en) * 2005-05-02 2007-02-20 Applied Materials, Inc. Materials for chemical mechanical polishing
KR100772034B1 (ko) * 2006-12-08 2007-10-31 주식회사 썬텍인더스트리 코팅된 3차원 연마재 구조물을 갖는 연마포지의 제조방법
WO2009140622A2 (en) * 2008-05-15 2009-11-19 3M Innovative Properties Company Polishing pad with endpoint window and systems and method using the same
KR20110019442A (ko) * 2008-06-26 2011-02-25 쓰리엠 이노베이티브 프로퍼티즈 캄파니 다공성 요소를 구비한 연마 패드 및 이 연마 패드의 제작 방법 및 이용 방법
US20110183583A1 (en) * 2008-07-18 2011-07-28 Joseph William D Polishing Pad with Floating Elements and Method of Making and Using the Same
DE102009030297B3 (de) * 2009-06-24 2011-01-20 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
WO2011082155A2 (en) 2009-12-30 2011-07-07 3M Innovative Properties Company Polishing pads including phase-separated polymer blend and method of making and using the same
TWI510328B (zh) * 2010-05-03 2015-12-01 Iv Technologies Co Ltd 基底層、包括此基底層的研磨墊及研磨方法
WO2012071243A2 (en) 2010-11-22 2012-05-31 3M Innovative Properties Company Assembly and electronic devices including the same
CN102601747B (zh) * 2011-01-20 2015-12-09 中芯国际集成电路制造(上海)有限公司 一种研磨垫及其制备方法、使用方法
JP5789634B2 (ja) * 2012-05-14 2015-10-07 株式会社荏原製作所 ワークピースを研磨するための研磨パッド並びに化学機械研磨装置、および該化学機械研磨装置を用いてワークピースを研磨する方法
US9199354B2 (en) 2012-10-29 2015-12-01 Wayne O. Duescher Flexible diaphragm post-type floating and rigid abrading workholder
US9604339B2 (en) 2012-10-29 2017-03-28 Wayne O. Duescher Vacuum-grooved membrane wafer polishing workholder
US9233452B2 (en) 2012-10-29 2016-01-12 Wayne O. Duescher Vacuum-grooved membrane abrasive polishing wafer workholder
US10556316B2 (en) 2015-05-13 2020-02-11 3M Innovative Properties Company Polishing pads and systems for and methods of using same
CN106903621A (zh) * 2017-04-02 2017-06-30 长葛市老城昌宝建筑机械配件厂 两种研磨颗粒的耐磨砂布和其制造方法
US10926378B2 (en) 2017-07-08 2021-02-23 Wayne O. Duescher Abrasive coated disk islands using magnetic font sheet
KR102777772B1 (ko) * 2018-11-27 2025-03-06 쓰리엠 이노베이티브 프로퍼티즈 컴파니 폴리싱 패드 및 시스템과 이의 제조 및 사용 방법
US11691241B1 (en) * 2019-08-05 2023-07-04 Keltech Engineering, Inc. Abrasive lapping head with floating and rigid workpiece carrier

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US5897426A (en) 1998-04-24 1999-04-27 Applied Materials, Inc. Chemical mechanical polishing with multiple polishing pads
US6461226B1 (en) * 1998-11-25 2002-10-08 Promos Technologies, Inc. Chemical mechanical polishing of a metal layer using a composite polishing pad
EP1068928A3 (en) * 1999-02-11 2003-08-13 Applied Materials, Inc. Chemical mechanical polishing processes and components
TW474852B (en) 1999-04-29 2002-02-01 Ebara Corp Method and apparatus for polishing workpieces
US6234875B1 (en) 1999-06-09 2001-05-22 3M Innovative Properties Company Method of modifying a surface
EP1077108B1 (en) 1999-08-18 2006-12-20 Ebara Corporation Polishing method and polishing apparatus
JP2001077060A (ja) 1999-09-08 2001-03-23 Toshiba Corp 半導体装置の製造方法
US6620725B1 (en) * 1999-09-13 2003-09-16 Taiwan Semiconductor Manufacturing Company Reduction of Cu line damage by two-step CMP
US6746311B1 (en) 2000-01-24 2004-06-08 3M Innovative Properties Company Polishing pad with release layer
AU2001251318A1 (en) * 2000-04-07 2001-10-23 Cabot Microelectronics Corporation Integrated chemical-mechanical polishing
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JP2001345297A (ja) 2000-05-30 2001-12-14 Hitachi Ltd 半導体集積回路装置の製造方法及び研磨装置
KR100373846B1 (ko) 2000-06-12 2003-02-26 지앤피테크놀로지 주식회사 반도체 및 광학부품용 연마패드 및 그 제조방법
US6383066B1 (en) 2000-06-23 2002-05-07 International Business Machines Corporation Multilayered polishing pad, method for fabricating, and use thereof
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US6645624B2 (en) * 2000-11-10 2003-11-11 3M Innovative Properties Company Composite abrasive particles and method of manufacture
US6612916B2 (en) 2001-01-08 2003-09-02 3M Innovative Properties Company Article suitable for chemical mechanical planarization processes
US6612917B2 (en) 2001-02-07 2003-09-02 3M Innovative Properties Company Abrasive article suitable for modifying a semiconductor wafer
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US6817923B2 (en) 2001-05-24 2004-11-16 Applied Materials, Inc. Chemical mechanical processing system with mobile load cup

Also Published As

Publication number Publication date
KR101062088B1 (ko) 2011-09-02
MY136807A (en) 2008-11-28
WO2004062853A1 (en) 2004-07-29
US20040137826A1 (en) 2004-07-15
KR20050092395A (ko) 2005-09-21
JP2006513571A (ja) 2006-04-20
TW200416107A (en) 2004-09-01
CN1735481B (zh) 2010-06-16
AU2003290921A1 (en) 2004-08-10
US6908366B2 (en) 2005-06-21
CN1735481A (zh) 2006-02-15
EP1583639A1 (en) 2005-10-12

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