CN1735481B - 一种对晶片表面修整的方法 - Google Patents

一种对晶片表面修整的方法 Download PDF

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Publication number
CN1735481B
CN1735481B CN2003801084733A CN200380108473A CN1735481B CN 1735481 B CN1735481 B CN 1735481B CN 2003801084733 A CN2003801084733 A CN 2003801084733A CN 200380108473 A CN200380108473 A CN 200380108473A CN 1735481 B CN1735481 B CN 1735481B
Authority
CN
China
Prior art keywords
wafer
abrasive
flexible member
shore
hardness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2003801084733A
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English (en)
Chinese (zh)
Other versions
CN1735481A (zh
Inventor
J·J·加利亚尔迪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
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3M Innovative Properties Co
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Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of CN1735481A publication Critical patent/CN1735481A/zh
Application granted granted Critical
Publication of CN1735481B publication Critical patent/CN1735481B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245—Pads with fixed abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
CN2003801084733A 2003-01-10 2003-11-17 一种对晶片表面修整的方法 Expired - Fee Related CN1735481B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/339,963 US6908366B2 (en) 2003-01-10 2003-01-10 Method of using a soft subpad for chemical mechanical polishing
US10/339,963 2003-01-10
PCT/US2003/036487 WO2004062853A1 (en) 2003-01-10 2003-11-17 Method of using a soft subpad for chemical mechanical polishing

Publications (2)

Publication Number Publication Date
CN1735481A CN1735481A (zh) 2006-02-15
CN1735481B true CN1735481B (zh) 2010-06-16

Family

ID=32711209

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2003801084733A Expired - Fee Related CN1735481B (zh) 2003-01-10 2003-11-17 一种对晶片表面修整的方法

Country Status (9)

Country Link
US (1) US6908366B2 (https=)
EP (1) EP1583639A1 (https=)
JP (1) JP2006513571A (https=)
KR (1) KR101062088B1 (https=)
CN (1) CN1735481B (https=)
AU (1) AU2003290921A1 (https=)
MY (1) MY136807A (https=)
TW (1) TWI309190B (https=)
WO (1) WO2004062853A1 (https=)

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US7320928B2 (en) * 2003-06-20 2008-01-22 Intel Corporation Method of forming a stacked device filler
US7198549B2 (en) * 2004-06-16 2007-04-03 Cabot Microelectronics Corporation Continuous contour polishing of a multi-material surface
US20060089095A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060089093A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060089094A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US6997785B1 (en) 2004-12-23 2006-02-14 3M Innovative Properties Company Wafer planarization composition and method of use
US7179159B2 (en) * 2005-05-02 2007-02-20 Applied Materials, Inc. Materials for chemical mechanical polishing
KR100772034B1 (ko) * 2006-12-08 2007-10-31 주식회사 썬텍인더스트리 코팅된 3차원 연마재 구조물을 갖는 연마포지의 제조방법
WO2009140622A2 (en) * 2008-05-15 2009-11-19 3M Innovative Properties Company Polishing pad with endpoint window and systems and method using the same
KR20110019442A (ko) * 2008-06-26 2011-02-25 쓰리엠 이노베이티브 프로퍼티즈 캄파니 다공성 요소를 구비한 연마 패드 및 이 연마 패드의 제작 방법 및 이용 방법
US20110183583A1 (en) * 2008-07-18 2011-07-28 Joseph William D Polishing Pad with Floating Elements and Method of Making and Using the Same
DE102009030297B3 (de) * 2009-06-24 2011-01-20 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
WO2011082155A2 (en) 2009-12-30 2011-07-07 3M Innovative Properties Company Polishing pads including phase-separated polymer blend and method of making and using the same
TWI510328B (zh) * 2010-05-03 2015-12-01 Iv Technologies Co Ltd 基底層、包括此基底層的研磨墊及研磨方法
WO2012071243A2 (en) 2010-11-22 2012-05-31 3M Innovative Properties Company Assembly and electronic devices including the same
CN102601747B (zh) * 2011-01-20 2015-12-09 中芯国际集成电路制造(上海)有限公司 一种研磨垫及其制备方法、使用方法
JP5789634B2 (ja) * 2012-05-14 2015-10-07 株式会社荏原製作所 ワークピースを研磨するための研磨パッド並びに化学機械研磨装置、および該化学機械研磨装置を用いてワークピースを研磨する方法
US9199354B2 (en) 2012-10-29 2015-12-01 Wayne O. Duescher Flexible diaphragm post-type floating and rigid abrading workholder
US9604339B2 (en) 2012-10-29 2017-03-28 Wayne O. Duescher Vacuum-grooved membrane wafer polishing workholder
US9233452B2 (en) 2012-10-29 2016-01-12 Wayne O. Duescher Vacuum-grooved membrane abrasive polishing wafer workholder
US10556316B2 (en) 2015-05-13 2020-02-11 3M Innovative Properties Company Polishing pads and systems for and methods of using same
CN106903621A (zh) * 2017-04-02 2017-06-30 长葛市老城昌宝建筑机械配件厂 两种研磨颗粒的耐磨砂布和其制造方法
US10926378B2 (en) 2017-07-08 2021-02-23 Wayne O. Duescher Abrasive coated disk islands using magnetic font sheet
KR102777772B1 (ko) * 2018-11-27 2025-03-06 쓰리엠 이노베이티브 프로퍼티즈 컴파니 폴리싱 패드 및 시스템과 이의 제조 및 사용 방법
US11691241B1 (en) * 2019-08-05 2023-07-04 Keltech Engineering, Inc. Abrasive lapping head with floating and rigid workpiece carrier

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US5968843A (en) * 1996-12-18 1999-10-19 Advanced Micro Devices, Inc. Method of planarizing a semiconductor topography using multiple polish pads
EP1050369A2 (en) * 1999-04-29 2000-11-08 Ebara Corporation Method and apparatus for polishing workpieces

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US5514245A (en) * 1992-01-27 1996-05-07 Micron Technology, Inc. Method for chemical planarization (CMP) of a semiconductor wafer to provide a planar surface free of microscratches
CA2134156A1 (en) 1993-11-22 1995-05-23 Thomas P. Klun Coatable compositions, abrasive articles made therefrom, and methods of making and using same
JPH0955362A (ja) * 1995-08-09 1997-02-25 Cypress Semiconductor Corp スクラッチを減少する集積回路の製造方法
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US5958794A (en) 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
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US6231629B1 (en) 1997-03-07 2001-05-15 3M Innovative Properties Company Abrasive article for providing a clear surface finish on glass
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US6461226B1 (en) * 1998-11-25 2002-10-08 Promos Technologies, Inc. Chemical mechanical polishing of a metal layer using a composite polishing pad
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US6645624B2 (en) * 2000-11-10 2003-11-11 3M Innovative Properties Company Composite abrasive particles and method of manufacture
US6612916B2 (en) 2001-01-08 2003-09-02 3M Innovative Properties Company Article suitable for chemical mechanical planarization processes
US6612917B2 (en) 2001-02-07 2003-09-02 3M Innovative Properties Company Abrasive article suitable for modifying a semiconductor wafer
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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5968843A (en) * 1996-12-18 1999-10-19 Advanced Micro Devices, Inc. Method of planarizing a semiconductor topography using multiple polish pads
EP1050369A2 (en) * 1999-04-29 2000-11-08 Ebara Corporation Method and apparatus for polishing workpieces

Also Published As

Publication number Publication date
KR101062088B1 (ko) 2011-09-02
TWI309190B (en) 2009-05-01
MY136807A (en) 2008-11-28
WO2004062853A1 (en) 2004-07-29
US20040137826A1 (en) 2004-07-15
KR20050092395A (ko) 2005-09-21
JP2006513571A (ja) 2006-04-20
TW200416107A (en) 2004-09-01
AU2003290921A1 (en) 2004-08-10
US6908366B2 (en) 2005-06-21
CN1735481A (zh) 2006-02-15
EP1583639A1 (en) 2005-10-12

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100616

Termination date: 20171117

CF01 Termination of patent right due to non-payment of annual fee