JP2006513571A - 化学的機械的研磨のための軟質サブパッドの使用方法 - Google Patents

化学的機械的研磨のための軟質サブパッドの使用方法 Download PDF

Info

Publication number
JP2006513571A
JP2006513571A JP2004566490A JP2004566490A JP2006513571A JP 2006513571 A JP2006513571 A JP 2006513571A JP 2004566490 A JP2004566490 A JP 2004566490A JP 2004566490 A JP2004566490 A JP 2004566490A JP 2006513571 A JP2006513571 A JP 2006513571A
Authority
JP
Japan
Prior art keywords
subpad
wafer
fixed abrasive
abrasive
elastic element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004566490A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006513571A5 (https=
Inventor
ジェイ． ガグリアルディ，ジョン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of JP2006513571A publication Critical patent/JP2006513571A/ja
Publication of JP2006513571A5 publication Critical patent/JP2006513571A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245—Pads with fixed abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
JP2004566490A 2003-01-10 2003-11-17 化学的機械的研磨のための軟質サブパッドの使用方法 Pending JP2006513571A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/339,963 US6908366B2 (en) 2003-01-10 2003-01-10 Method of using a soft subpad for chemical mechanical polishing
PCT/US2003/036487 WO2004062853A1 (en) 2003-01-10 2003-11-17 Method of using a soft subpad for chemical mechanical polishing

Publications (2)

Publication Number Publication Date
JP2006513571A true JP2006513571A (ja) 2006-04-20
JP2006513571A5 JP2006513571A5 (https=) 2006-12-21

Family

ID=32711209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004566490A Pending JP2006513571A (ja) 2003-01-10 2003-11-17 化学的機械的研磨のための軟質サブパッドの使用方法

Country Status (9)

Country Link
US (1) US6908366B2 (https=)
EP (1) EP1583639A1 (https=)
JP (1) JP2006513571A (https=)
KR (1) KR101062088B1 (https=)
CN (1) CN1735481B (https=)
AU (1) AU2003290921A1 (https=)
MY (1) MY136807A (https=)
TW (1) TWI309190B (https=)
WO (1) WO2004062853A1 (https=)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040209066A1 (en) * 2003-04-17 2004-10-21 Swisher Robert G. Polishing pad with window for planarization
US6946384B2 (en) * 2003-06-06 2005-09-20 Intel Corporation Stacked device underfill and a method of fabrication
US7320928B2 (en) * 2003-06-20 2008-01-22 Intel Corporation Method of forming a stacked device filler
US7198549B2 (en) * 2004-06-16 2007-04-03 Cabot Microelectronics Corporation Continuous contour polishing of a multi-material surface
US20060089095A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060089093A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060089094A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US6997785B1 (en) 2004-12-23 2006-02-14 3M Innovative Properties Company Wafer planarization composition and method of use
US7179159B2 (en) * 2005-05-02 2007-02-20 Applied Materials, Inc. Materials for chemical mechanical polishing
KR100772034B1 (ko) * 2006-12-08 2007-10-31 주식회사 썬텍인더스트리 코팅된 3차원 연마재 구조물을 갖는 연마포지의 제조방법
WO2009140622A2 (en) * 2008-05-15 2009-11-19 3M Innovative Properties Company Polishing pad with endpoint window and systems and method using the same
KR20110019442A (ko) * 2008-06-26 2011-02-25 쓰리엠 이노베이티브 프로퍼티즈 캄파니 다공성 요소를 구비한 연마 패드 및 이 연마 패드의 제작 방법 및 이용 방법
US20110183583A1 (en) * 2008-07-18 2011-07-28 Joseph William D Polishing Pad with Floating Elements and Method of Making and Using the Same
DE102009030297B3 (de) * 2009-06-24 2011-01-20 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
WO2011082155A2 (en) 2009-12-30 2011-07-07 3M Innovative Properties Company Polishing pads including phase-separated polymer blend and method of making and using the same
TWI510328B (zh) * 2010-05-03 2015-12-01 Iv Technologies Co Ltd 基底層、包括此基底層的研磨墊及研磨方法
WO2012071243A2 (en) 2010-11-22 2012-05-31 3M Innovative Properties Company Assembly and electronic devices including the same
CN102601747B (zh) * 2011-01-20 2015-12-09 中芯国际集成电路制造(上海)有限公司 一种研磨垫及其制备方法、使用方法
JP5789634B2 (ja) * 2012-05-14 2015-10-07 株式会社荏原製作所 ワークピースを研磨するための研磨パッド並びに化学機械研磨装置、および該化学機械研磨装置を用いてワークピースを研磨する方法
US9199354B2 (en) 2012-10-29 2015-12-01 Wayne O. Duescher Flexible diaphragm post-type floating and rigid abrading workholder
US9604339B2 (en) 2012-10-29 2017-03-28 Wayne O. Duescher Vacuum-grooved membrane wafer polishing workholder
US9233452B2 (en) 2012-10-29 2016-01-12 Wayne O. Duescher Vacuum-grooved membrane abrasive polishing wafer workholder
US10556316B2 (en) 2015-05-13 2020-02-11 3M Innovative Properties Company Polishing pads and systems for and methods of using same
CN106903621A (zh) * 2017-04-02 2017-06-30 长葛市老城昌宝建筑机械配件厂 两种研磨颗粒的耐磨砂布和其制造方法
US10926378B2 (en) 2017-07-08 2021-02-23 Wayne O. Duescher Abrasive coated disk islands using magnetic font sheet
KR102777772B1 (ko) * 2018-11-27 2025-03-06 쓰리엠 이노베이티브 프로퍼티즈 컴파니 폴리싱 패드 및 시스템과 이의 제조 및 사용 방법
US11691241B1 (en) * 2019-08-05 2023-07-04 Keltech Engineering, Inc. Abrasive lapping head with floating and rigid workpiece carrier

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000315665A (ja) * 1999-04-29 2000-11-14 Ebara Corp 研磨方法及び装置
WO2001053042A1 (en) * 2000-01-24 2001-07-26 3M Innovative Properties Company Polishing pad with release layer
JP2001512057A (ja) * 1997-07-30 2001-08-21 スキャッパ、グループ、ピー・エル・シー 半導体ウエハーの研磨
WO2001076819A1 (en) * 2000-04-07 2001-10-18 Cabot Microelectronics Corporation Integrated chemical-mechanical polishing
WO2002038338A2 (en) * 2000-11-10 2002-05-16 3M Innovative Properties Company Composite abrasive particles and method of manufacture

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4927432A (en) 1986-03-25 1990-05-22 Rodel, Inc. Pad material for grinding, lapping and polishing
US5152917B1 (en) 1991-02-06 1998-01-13 Minnesota Mining & Mfg Structured abrasive article
US5110843A (en) 1991-05-01 1992-05-05 Minnesota Mining And Manufacturing Company Absorbent, non-skinned foam and the method of preparation
US5514245A (en) * 1992-01-27 1996-05-07 Micron Technology, Inc. Method for chemical planarization (CMP) of a semiconductor wafer to provide a planar surface free of microscratches
CA2134156A1 (en) 1993-11-22 1995-05-23 Thomas P. Klun Coatable compositions, abrasive articles made therefrom, and methods of making and using same
JPH0955362A (ja) * 1995-08-09 1997-02-25 Cypress Semiconductor Corp スクラッチを減少する集積回路の製造方法
CN1197542A (zh) 1995-09-13 1998-10-28 株式会社日立制作所 抛光方法和设备
US5958794A (en) 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
US5692950A (en) 1996-08-08 1997-12-02 Minnesota Mining And Manufacturing Company Abrasive construction for semiconductor wafer modification
US5968843A (en) 1996-12-18 1999-10-19 Advanced Micro Devices, Inc. Method of planarizing a semiconductor topography using multiple polish pads
US6231629B1 (en) 1997-03-07 2001-05-15 3M Innovative Properties Company Abrasive article for providing a clear surface finish on glass
US6194317B1 (en) 1998-04-30 2001-02-27 3M Innovative Properties Company Method of planarizing the upper surface of a semiconductor wafer
US5897426A (en) 1998-04-24 1999-04-27 Applied Materials, Inc. Chemical mechanical polishing with multiple polishing pads
US6461226B1 (en) * 1998-11-25 2002-10-08 Promos Technologies, Inc. Chemical mechanical polishing of a metal layer using a composite polishing pad
EP1068928A3 (en) * 1999-02-11 2003-08-13 Applied Materials, Inc. Chemical mechanical polishing processes and components
TW474852B (en) 1999-04-29 2002-02-01 Ebara Corp Method and apparatus for polishing workpieces
US6234875B1 (en) 1999-06-09 2001-05-22 3M Innovative Properties Company Method of modifying a surface
EP1077108B1 (en) 1999-08-18 2006-12-20 Ebara Corporation Polishing method and polishing apparatus
JP2001077060A (ja) 1999-09-08 2001-03-23 Toshiba Corp 半導体装置の製造方法
US6620725B1 (en) * 1999-09-13 2003-09-16 Taiwan Semiconductor Manufacturing Company Reduction of Cu line damage by two-step CMP
JP2001334458A (ja) 2000-05-26 2001-12-04 Ebara Corp ポリッシング方法
JP2001345297A (ja) 2000-05-30 2001-12-14 Hitachi Ltd 半導体集積回路装置の製造方法及び研磨装置
KR100373846B1 (ko) 2000-06-12 2003-02-26 지앤피테크놀로지 주식회사 반도체 및 광학부품용 연마패드 및 그 제조방법
US6383066B1 (en) 2000-06-23 2002-05-07 International Business Machines Corporation Multilayered polishing pad, method for fabricating, and use thereof
JP3797861B2 (ja) 2000-09-27 2006-07-19 株式会社荏原製作所 ポリッシング装置
US6612916B2 (en) 2001-01-08 2003-09-02 3M Innovative Properties Company Article suitable for chemical mechanical planarization processes
US6612917B2 (en) 2001-02-07 2003-09-02 3M Innovative Properties Company Abrasive article suitable for modifying a semiconductor wafer
US6632129B2 (en) 2001-02-15 2003-10-14 3M Innovative Properties Company Fixed abrasive article for use in modifying a semiconductor wafer
US6817923B2 (en) 2001-05-24 2004-11-16 Applied Materials, Inc. Chemical mechanical processing system with mobile load cup

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001512057A (ja) * 1997-07-30 2001-08-21 スキャッパ、グループ、ピー・エル・シー 半導体ウエハーの研磨
JP2000315665A (ja) * 1999-04-29 2000-11-14 Ebara Corp 研磨方法及び装置
WO2001053042A1 (en) * 2000-01-24 2001-07-26 3M Innovative Properties Company Polishing pad with release layer
WO2001076819A1 (en) * 2000-04-07 2001-10-18 Cabot Microelectronics Corporation Integrated chemical-mechanical polishing
WO2002038338A2 (en) * 2000-11-10 2002-05-16 3M Innovative Properties Company Composite abrasive particles and method of manufacture

Also Published As

Publication number Publication date
KR101062088B1 (ko) 2011-09-02
TWI309190B (en) 2009-05-01
MY136807A (en) 2008-11-28
WO2004062853A1 (en) 2004-07-29
US20040137826A1 (en) 2004-07-15
KR20050092395A (ko) 2005-09-21
TW200416107A (en) 2004-09-01
CN1735481B (zh) 2010-06-16
AU2003290921A1 (en) 2004-08-10
US6908366B2 (en) 2005-06-21
CN1735481A (zh) 2006-02-15
EP1583639A1 (en) 2005-10-12

Similar Documents

Publication Publication Date Title
JP2006513571A (ja) 化学的機械的研磨のための軟質サブパッドの使用方法
US7163444B2 (en) Pad constructions for chemical mechanical planarization applications
KR100638289B1 (ko) 구조화된 웨이퍼의 표면 변형 방법
US6857941B2 (en) Multi-phase polishing pad
CN1068815C (zh) 用于修整半导体晶片的磨料结构
EP1345734A1 (en) Crosslinked polyethylene polishing pad for chemical-mechnical polishing, polishing apparatus and polishing method
KR102640690B1 (ko) 높은 탄성률 비를 갖는 폴리우레탄 화학 기계적 연마 패드
JP2018531157A6 (ja) 高い弾性率比率を有するポリウレタンｃｍｐパッド
EP3887093A1 (en) Polishing pads and systems and methods of making and using the same
JP2006210657A (ja) 研磨パッド、研磨装置、および半導体デバイスの製造方法
JP2003347244A (ja) 半導体ウエハの研磨方法
JP2007319981A (ja) 研磨パッド

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061101

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20061101

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091110

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100208

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100216

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100510

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101130

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20110419