TWI303439B - Blanced load memory and method of operation - Google Patents
Blanced load memory and method of operation Download PDFInfo
- Publication number
- TWI303439B TWI303439B TW092117692A TW92117692A TWI303439B TW I303439 B TWI303439 B TW I303439B TW 092117692 A TW092117692 A TW 092117692A TW 92117692 A TW92117692 A TW 92117692A TW I303439 B TWI303439 B TW I303439B
- Authority
- TW
- Taiwan
- Prior art keywords
- array
- sub
- sense amplifier
- data
- data line
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 14
- 230000008878 coupling Effects 0.000 claims 6
- 238000010168 coupling process Methods 0.000 claims 6
- 238000005859 coupling reaction Methods 0.000 claims 6
- 238000004804 winding Methods 0.000 claims 2
- 239000004020 conductor Substances 0.000 description 94
- 239000006185 dispersion Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 6
- 230000002452 interceptive effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000003491 array Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 239000012925 reference material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 101100236208 Homo sapiens LTB4R gene Proteins 0.000 description 1
- 102100033374 Leukotriene B4 receptor 1 Human genes 0.000 description 1
- 235000009827 Prunus armeniaca Nutrition 0.000 description 1
- 244000018633 Prunus armeniaca Species 0.000 description 1
- 101100437750 Schizosaccharomyces pombe (strain 972 / ATCC 24843) blt1 gene Proteins 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000004438 eyesight Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/067—Single-ended amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/14—Dummy cell management; Sense reference voltage generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/005—Transfer gates, i.e. gates coupling the sense amplifier output to data lines, I/O lines or global bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/06—Sense amplifier related aspects
- G11C2207/063—Current sense amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/184,720 US6711068B2 (en) | 2002-06-28 | 2002-06-28 | Balanced load memory and method of operation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200409137A TW200409137A (en) | 2004-06-01 |
| TWI303439B true TWI303439B (en) | 2008-11-21 |
Family
ID=29779429
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092117692A TWI303439B (en) | 2002-06-28 | 2003-06-27 | Blanced load memory and method of operation |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6711068B2 (enExample) |
| EP (1) | EP1518243A1 (enExample) |
| JP (1) | JP4368793B2 (enExample) |
| KR (1) | KR100940951B1 (enExample) |
| CN (1) | CN1666289B (enExample) |
| AU (1) | AU2003225175A1 (enExample) |
| TW (1) | TWI303439B (enExample) |
| WO (1) | WO2004003919A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6795336B2 (en) * | 2001-12-07 | 2004-09-21 | Hynix Semiconductor Inc. | Magnetic random access memory |
| US6917552B2 (en) * | 2002-03-05 | 2005-07-12 | Renesas Technology Corporation | Semiconductor device using high-speed sense amplifier |
| US7251160B2 (en) * | 2005-03-16 | 2007-07-31 | Sandisk Corporation | Non-volatile memory and method with power-saving read and program-verify operations |
| US7362604B2 (en) * | 2005-07-11 | 2008-04-22 | Sandisk 3D Llc | Apparatus and method for programming an array of nonvolatile memory cells including switchable resistor memory elements |
| US7345907B2 (en) * | 2005-07-11 | 2008-03-18 | Sandisk 3D Llc | Apparatus and method for reading an array of nonvolatile memory cells including switchable resistor memory elements |
| US7321507B2 (en) * | 2005-11-21 | 2008-01-22 | Magic Technologies, Inc. | Reference cell scheme for MRAM |
| JP4901204B2 (ja) * | 2005-12-13 | 2012-03-21 | 株式会社東芝 | 半導体集積回路装置 |
| CN1988032B (zh) * | 2005-12-23 | 2011-06-22 | 财团法人工业技术研究院 | 存储器的负载平衡架构 |
| US20070247939A1 (en) * | 2006-04-21 | 2007-10-25 | Nahas Joseph J | Mram array with reference cell row and methof of operation |
| US8279704B2 (en) * | 2006-07-31 | 2012-10-02 | Sandisk 3D Llc | Decoder circuitry providing forward and reverse modes of memory array operation and method for biasing same |
| US7542338B2 (en) * | 2006-07-31 | 2009-06-02 | Sandisk 3D Llc | Method for reading a multi-level passive element memory cell array |
| US7542337B2 (en) * | 2006-07-31 | 2009-06-02 | Sandisk 3D Llc | Apparatus for reading a multi-level passive element memory cell array |
| US7787282B2 (en) * | 2008-03-21 | 2010-08-31 | Micron Technology, Inc. | Sensing resistance variable memory |
| JP5100530B2 (ja) * | 2008-06-23 | 2012-12-19 | 株式会社東芝 | 抵抗変化型メモリ |
| US8233309B2 (en) * | 2009-10-26 | 2012-07-31 | Sandisk 3D Llc | Non-volatile memory array architecture incorporating 1T-1R near 4F2 memory cell |
| JP5359804B2 (ja) * | 2009-11-16 | 2013-12-04 | ソニー株式会社 | 不揮発性半導体メモリデバイス |
| US8331166B2 (en) | 2011-02-28 | 2012-12-11 | Infineon Techn. AG | Method and system for reading from memory cells in a memory device |
| US8498169B2 (en) | 2011-09-02 | 2013-07-30 | Qualcomm Incorporated | Code-based differential charging of bit lines of a sense amplifier |
| US10108377B2 (en) * | 2015-11-13 | 2018-10-23 | Western Digital Technologies, Inc. | Storage processing unit arrays and methods of use |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4713797A (en) | 1985-11-25 | 1987-12-15 | Motorola Inc. | Current mirror sense amplifier for a non-volatile memory |
| GB9423032D0 (en) * | 1994-11-15 | 1995-01-04 | Sgs Thomson Microelectronics | Bit line sensing in a memory array |
| KR0164391B1 (ko) * | 1995-06-29 | 1999-02-18 | 김광호 | 고속동작을 위한 회로 배치 구조를 가지는 반도체 메모리 장치 |
| US5764581A (en) * | 1997-03-04 | 1998-06-09 | Advanced Micro Devices Inc. | Dynamic ram with two-transistor cell |
| JP3169858B2 (ja) * | 1997-06-20 | 2001-05-28 | 日本電気アイシーマイコンシステム株式会社 | 多値型半導体記憶装置 |
| US6191989B1 (en) | 2000-03-07 | 2001-02-20 | International Business Machines Corporation | Current sensing amplifier |
| US6269040B1 (en) | 2000-06-26 | 2001-07-31 | International Business Machines Corporation | Interconnection network for connecting memory cells to sense amplifiers |
| ITMI20011150A1 (it) * | 2001-05-30 | 2002-11-30 | St Microelectronics Srl | Multiplatore di colonna per memorie a semiconduttore |
-
2002
- 2002-06-28 US US10/184,720 patent/US6711068B2/en not_active Expired - Lifetime
-
2003
- 2003-04-24 WO PCT/US2003/013007 patent/WO2004003919A1/en not_active Ceased
- 2003-04-24 EP EP03721888A patent/EP1518243A1/en not_active Withdrawn
- 2003-04-24 JP JP2004517522A patent/JP4368793B2/ja not_active Expired - Fee Related
- 2003-04-24 KR KR1020047021346A patent/KR100940951B1/ko not_active Expired - Fee Related
- 2003-04-24 CN CN038152932A patent/CN1666289B/zh not_active Expired - Lifetime
- 2003-04-24 AU AU2003225175A patent/AU2003225175A1/en not_active Abandoned
- 2003-06-27 TW TW092117692A patent/TWI303439B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20050013648A (ko) | 2005-02-04 |
| WO2004003919A1 (en) | 2004-01-08 |
| CN1666289A (zh) | 2005-09-07 |
| EP1518243A1 (en) | 2005-03-30 |
| AU2003225175A1 (en) | 2004-01-19 |
| TW200409137A (en) | 2004-06-01 |
| CN1666289B (zh) | 2010-04-28 |
| US6711068B2 (en) | 2004-03-23 |
| KR100940951B1 (ko) | 2010-02-05 |
| JP4368793B2 (ja) | 2009-11-18 |
| US20040001361A1 (en) | 2004-01-01 |
| JP2005531875A (ja) | 2005-10-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |