TWI302226B - Resist composition and patterning process - Google Patents

Resist composition and patterning process Download PDF

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Publication number
TWI302226B
TWI302226B TW093114290A TW93114290A TWI302226B TW I302226 B TWI302226 B TW I302226B TW 093114290 A TW093114290 A TW 093114290A TW 93114290 A TW93114290 A TW 93114290A TW I302226 B TWI302226 B TW I302226B
Authority
TW
Taiwan
Prior art keywords
group
carbon atoms
amine
acid
bis
Prior art date
Application number
TW093114290A
Other languages
English (en)
Chinese (zh)
Other versions
TW200500806A (en
Inventor
Takeru Watanabe
Jun Hatakeyama
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of TW200500806A publication Critical patent/TW200500806A/zh
Application granted granted Critical
Publication of TWI302226B publication Critical patent/TWI302226B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
TW093114290A 2003-05-21 2004-05-20 Resist composition and patterning process TWI302226B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003142790A JP4029288B2 (ja) 2003-05-21 2003-05-21 レジスト材料及びパターン形成方法

Publications (2)

Publication Number Publication Date
TW200500806A TW200500806A (en) 2005-01-01
TWI302226B true TWI302226B (en) 2008-10-21

Family

ID=33447489

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093114290A TWI302226B (en) 2003-05-21 2004-05-20 Resist composition and patterning process

Country Status (4)

Country Link
US (1) US7179581B2 (US20040234885A1-20041125-C00001.png)
JP (1) JP4029288B2 (US20040234885A1-20041125-C00001.png)
KR (1) KR100837042B1 (US20040234885A1-20041125-C00001.png)
TW (1) TWI302226B (US20040234885A1-20041125-C00001.png)

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JP4493938B2 (ja) * 2003-06-06 2010-06-30 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
US7923192B2 (en) * 2004-02-20 2011-04-12 Tokyo Ohka Kogyo Co., Ltd. Base material for pattern-forming material, positive resist composition and method of resist pattern formation
JP3946715B2 (ja) * 2004-07-28 2007-07-18 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4468119B2 (ja) * 2004-09-08 2010-05-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP4837323B2 (ja) * 2004-10-29 2011-12-14 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法および化合物
US7981588B2 (en) * 2005-02-02 2011-07-19 Tokyo Ohka Kogyo Co., Ltd. Negative resist composition and method of forming resist pattern
JP5138157B2 (ja) * 2005-05-17 2013-02-06 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4813103B2 (ja) * 2005-06-17 2011-11-09 東京応化工業株式会社 化合物、ポジ型レジスト組成物およびレジストパターン形成方法
JP4732038B2 (ja) * 2005-07-05 2011-07-27 東京応化工業株式会社 化合物、ポジ型レジスト組成物およびレジストパターン形成方法
JP4590325B2 (ja) * 2005-08-01 2010-12-01 富士フイルム株式会社 レジスト組成物及び該レジスト組成物を用いたパターン形成方法
WO2009102761A1 (en) 2008-02-12 2009-08-20 Bristol-Myers Squibb Company 1,2,3-triazoles as 11-beta hydroxysteroid dehydrogenase type i inhibitors
JP4655128B2 (ja) * 2008-09-05 2011-03-23 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP5527236B2 (ja) 2011-01-31 2014-06-18 信越化学工業株式会社 ポジ型化学増幅レジスト材料、パターン形成方法及び酸分解性ケトエステル化合物
EP2960280A1 (en) * 2014-06-26 2015-12-30 E.T.C. S.r.l. Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
KR101788090B1 (ko) 2014-11-28 2017-11-15 삼성에스디아이 주식회사 중합체, 유기막 조성물, 유기막, 및 패턴형성방법
TWI557501B (zh) * 2014-12-22 2016-11-11 奇美實業股份有限公司 感光性聚矽氧烷組成物、保護膜以及具有保護膜的元件
KR102228070B1 (ko) 2017-11-01 2021-03-12 주식회사 엘지화학 화학 증폭형 포토레지스트 조성물 및 이를 이용한 포토레지스트 필름

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Also Published As

Publication number Publication date
KR100837042B1 (ko) 2008-06-11
JP4029288B2 (ja) 2008-01-09
JP2004347735A (ja) 2004-12-09
TW200500806A (en) 2005-01-01
KR20040101018A (ko) 2004-12-02
US7179581B2 (en) 2007-02-20
US20040234885A1 (en) 2004-11-25

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