TWI292588B - Method and system for forming a semiconductor device - Google Patents

Method and system for forming a semiconductor device Download PDF

Info

Publication number
TWI292588B
TWI292588B TW092107133A TW92107133A TWI292588B TW I292588 B TWI292588 B TW I292588B TW 092107133 A TW092107133 A TW 092107133A TW 92107133 A TW92107133 A TW 92107133A TW I292588 B TWI292588 B TW I292588B
Authority
TW
Taiwan
Prior art keywords
layer
impedance
material layer
substrate
impedance structure
Prior art date
Application number
TW092107133A
Other languages
English (en)
Chinese (zh)
Other versions
TW200400542A (en
Inventor
Philip Taussig Carl
Mei Ping
Original Assignee
Hewlett Packard Development Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Development Co filed Critical Hewlett Packard Development Co
Publication of TW200400542A publication Critical patent/TW200400542A/zh
Application granted granted Critical
Publication of TWI292588B publication Critical patent/TWI292588B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/694—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks or redeposited masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4083—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW092107133A 2002-06-28 2003-03-28 Method and system for forming a semiconductor device TWI292588B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/184,567 US6861365B2 (en) 2002-06-28 2002-06-28 Method and system for forming a semiconductor device

Publications (2)

Publication Number Publication Date
TW200400542A TW200400542A (en) 2004-01-01
TWI292588B true TWI292588B (en) 2008-01-11

Family

ID=29717967

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092107133A TWI292588B (en) 2002-06-28 2003-03-28 Method and system for forming a semiconductor device

Country Status (5)

Country Link
US (1) US6861365B2 (https=)
EP (1) EP1376663A3 (https=)
JP (1) JP4585745B2 (https=)
CN (1) CN100565796C (https=)
TW (1) TWI292588B (https=)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100365507C (zh) * 2000-10-12 2008-01-30 德克萨斯州大学系统董事会 用于室温下低压微刻痕和毫微刻痕光刻的模板
JP3821069B2 (ja) 2002-08-01 2006-09-13 株式会社日立製作所 転写パターンによる構造体の形成方法
US20040065252A1 (en) * 2002-10-04 2004-04-08 Sreenivasan Sidlgata V. Method of forming a layer on a substrate to facilitate fabrication of metrology standards
US7256435B1 (en) * 2003-06-02 2007-08-14 Hewlett-Packard Development Company, L.P. Multilevel imprint lithography
JP2005159294A (ja) * 2003-09-18 2005-06-16 Nec Kagoshima Ltd 基板処理方法及びそれに用いる薬液
EP1702359B1 (en) * 2003-09-29 2009-12-09 International Business Machines Corporation Fabrication method
US8148251B2 (en) * 2004-01-30 2012-04-03 Hewlett-Packard Development Company, L.P. Forming a semiconductor device
US7056834B2 (en) * 2004-02-10 2006-06-06 Hewlett-Packard Development Company, L.P. Forming a plurality of thin-film devices using imprint lithography
US7195950B2 (en) * 2004-07-21 2007-03-27 Hewlett-Packard Development Company, L.P. Forming a plurality of thin-film devices
US7259106B2 (en) * 2004-09-10 2007-08-21 Versatilis Llc Method of making a microelectronic and/or optoelectronic circuitry sheet
US7202179B2 (en) * 2004-12-22 2007-04-10 Hewlett-Packard Development Company, L.P. Method of forming at least one thin film device
US7585424B2 (en) * 2005-01-18 2009-09-08 Hewlett-Packard Development Company, L.P. Pattern reversal process for self aligned imprint lithography and device
US7521313B2 (en) * 2005-01-18 2009-04-21 Hewlett-Packard Development Company, L.P. Thin film device active matrix by pattern reversal process
US8097400B2 (en) * 2005-02-22 2012-01-17 Hewlett-Packard Development Company, L.P. Method for forming an electronic device
US7352376B2 (en) * 2005-03-29 2008-04-01 Hewlett-Packard Development Company, L.P. Apparatus and method for electrophoretic printing device
US7470544B2 (en) * 2005-05-26 2008-12-30 Hewlett-Packard Development Company, L.P. Sensor array using sail
US7994509B2 (en) * 2005-11-01 2011-08-09 Hewlett-Packard Development Company, L.P. Structure and method for thin film device with stranded conductor
US7341893B2 (en) * 2005-06-02 2008-03-11 Hewlett-Packard Development Company, L.P. Structure and method for thin film device
US7533905B2 (en) * 2005-06-02 2009-05-19 Hewlett-Packard Development Company, L.P. Anti-counterfeiting system and method
JP2008543105A (ja) * 2005-06-06 2008-11-27 エヌエックスピー ビー ヴィ クロスバー回路装置の製造方法
KR101107474B1 (ko) * 2005-06-07 2012-01-19 엘지디스플레이 주식회사 소프트몰드와 이를 이용한 패턴방법
FR2887160B1 (fr) * 2005-06-16 2007-09-14 Eastman Kodak Co Procede d'application d'une couche mince discontinue sur un substrat
US7678626B2 (en) * 2005-11-23 2010-03-16 Hewlett-Packard Development Company, L.P. Method and system for forming a thin film device
KR101157966B1 (ko) * 2005-12-29 2012-06-25 엘지디스플레이 주식회사 액정표시소자의 제조방법
WO2007100849A2 (en) 2006-02-27 2007-09-07 Microcontinuum, Inc. Formation of pattern replicating tools
GB2436163A (en) * 2006-03-10 2007-09-19 Seiko Epson Corp Device fabrication by ink-jet printing materials into bank structures, and embossing tool
US7795062B2 (en) * 2007-04-03 2010-09-14 Hewlett-Packard Development Company, L.P. Method of forming a pressure switch thin film device
DE102007044505A1 (de) * 2007-09-18 2009-03-19 Robert Bosch Gmbh Verfahren zum lithographischen Erzeugen von Nano- und/oder Mikrostrukturen, Stempel sowie Substrat
US20090108397A1 (en) * 2007-10-31 2009-04-30 Warren Jackson Thin film device with layer isolation structure
US8765252B2 (en) 2007-11-30 2014-07-01 Hewlett-Packard Development Company, L.P. Thin film device with minimized spatial variation of local mean height
US8021935B2 (en) 2008-10-01 2011-09-20 Hewlett-Packard Development Company, L.P. Thin film device fabrication process using 3D template
US20120113087A1 (en) 2009-06-18 2012-05-10 Taussig Carl P Current-driven-pixel circuits and related methods
KR101549267B1 (ko) * 2009-10-14 2015-09-11 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판의 제조방법
KR101568268B1 (ko) * 2009-10-27 2015-11-11 엘지디스플레이 주식회사 박막트랜지스터 기판 및 그 제조 방법
US8568182B2 (en) 2010-09-27 2013-10-29 Hewlett-Packard Development Company, L.P. Display
US8877531B2 (en) 2010-09-27 2014-11-04 Applied Materials, Inc. Electronic apparatus
NL2007372C2 (en) 2011-09-08 2013-03-11 Univ Delft Tech A process for the manufacture of a semiconductor device.
GB2532895B (en) 2012-02-21 2016-07-13 Pragmatic Printing Ltd Substantially planar electronic devices and circuits
US8940555B2 (en) * 2012-09-06 2015-01-27 Globalfoundries Inc. Method and system for determining overlap process windows in semiconductors by inspection techniques
NL2010199C2 (en) 2013-01-29 2014-08-04 Univ Delft Tech Manufacturing a submicron structure using a liquid precursor.
US9589797B2 (en) 2013-05-17 2017-03-07 Microcontinuum, Inc. Tools and methods for producing nanoantenna electronic devices
KR102420081B1 (ko) 2015-03-27 2022-07-13 삼성디스플레이 주식회사 박막 형성 방법 및 이를 이용한 유기 발광 표시 장치의 제조 방법
JP6646888B2 (ja) * 2015-09-09 2020-02-14 大日本印刷株式会社 凸状構造体、凹状構造体、及び凸状構造体の製造方法
CN105425547B (zh) * 2016-01-12 2018-07-10 苏州华维纳纳米科技有限公司 一种在曝光光刻中使用的立体模板及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02156624A (ja) * 1988-12-09 1990-06-15 Mitsubishi Electric Corp 半導体装置の製造方法
JPH03100942A (ja) * 1989-09-13 1991-04-25 Hitachi Chem Co Ltd 光ディスク用スタンパの製造方法
JPH0580530A (ja) * 1991-09-24 1993-04-02 Hitachi Ltd 薄膜パターン製造方法
US5308415A (en) * 1992-12-31 1994-05-03 Chartered Semiconductor Manufacturing Pte Ltd. Enhancing step coverage by creating a tapered profile through three dimensional resist pull back
EP0784542B1 (en) * 1995-08-04 2001-11-28 International Business Machines Corporation Stamp for a lithographic process
JP2002502129A (ja) * 1998-02-02 2002-01-22 ユニアックス コーポレイション 切替え可能な光電感度を有する有機ダイオード
US6255035B1 (en) * 1999-03-17 2001-07-03 Electron Vision Corporation Method of creating optimal photoresist structures used in the manufacture of metal T-gates for high-speed semiconductor devices
EP1072954A3 (en) * 1999-07-28 2002-05-22 Lucent Technologies Inc. Lithographic process for device fabrication
JP2001147515A (ja) * 1999-09-07 2001-05-29 Ricoh Co Ltd フォトマスク設計方法、フォトマスク設計装置、コンピュータ読取可能な記憶媒体、フォトマスク、フォトレジスト、感光性樹脂、基板、マイクロレンズ及び光学素子
US6165911A (en) 1999-12-29 2000-12-26 Calveley; Peter Braden Method of patterning a metal layer
TW461002B (en) * 2000-06-05 2001-10-21 Ind Tech Res Inst Testing apparatus and testing method for organic light emitting diode array
SG142150A1 (en) * 2000-07-16 2008-05-28 Univ Texas High-resolution overlay alignment systems for imprint lithography
JP2002162747A (ja) * 2000-11-27 2002-06-07 Ricoh Opt Ind Co Ltd 多段階露光による三次元構造体製造方法

Also Published As

Publication number Publication date
US6861365B2 (en) 2005-03-01
EP1376663A3 (en) 2005-04-13
CN100565796C (zh) 2009-12-02
JP4585745B2 (ja) 2010-11-24
JP2004040092A (ja) 2004-02-05
EP1376663A2 (en) 2004-01-02
US20040002216A1 (en) 2004-01-01
HK1064212A1 (zh) 2005-01-21
CN1495853A (zh) 2004-05-12
TW200400542A (en) 2004-01-01

Similar Documents

Publication Publication Date Title
TWI292588B (en) Method and system for forming a semiconductor device
US8771929B2 (en) Tone inversion of self-assembled self-aligned structures
US9341944B2 (en) Imprint lithography
JP5505904B2 (ja) 二次元自己組織化サブリソグラフィ・ナノスケール構造およびこれを製造するための方法（自己組織化材料を用いた二次元パターニング）
US8828871B2 (en) Method for forming pattern and mask pattern, and method for manufacturing semiconductor device
US9349640B1 (en) Electrode pair fabrication using directed self assembly of diblock copolymers
TWI453106B (zh) 奈米尺寸形狀之大面積圖案化技術
US10079145B2 (en) Method for pattern formation on a substrate, associated semiconductor devices, and uses of the method
JP2006032975A (ja) 複数の薄膜デバイスを形成するための方法
KR20100110839A (ko) 자기 정렬
TW200931592A (en) Spacer process for on pitch contacts and related structures
KR20150064264A (ko) 나노 스케일 형상 구조 및 형성 방법
US20130140272A1 (en) Lithography using self-assembled polymers
JP6370883B2 (ja) マルチレベルマスク回路製造及び多層回路
US7060625B2 (en) Imprint stamp
TW200525598A (en) Forming a semiconductor device
KR101327310B1 (ko) 임프린트 리소그래피와 다층 박막을 이용한 패터닝 방법
US8486514B2 (en) Method to fabricate a mould for lithography by nano-imprinting
HK1064212B (zh) 半导体器件的制造方法和系统
WO2020147322A1 (zh) 导电膜的制作方法及导电膜
TW200921843A (en) Method for forming an opening of nano-meter scale
KR20150014352A (ko) 나노 임프린트를 이용한 나노 구조물 형성 방법

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees