CN100565796C - 半导体器件的制造方法和系统 - Google Patents

半导体器件的制造方法和系统 Download PDF

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Publication number
CN100565796C
CN100565796C CNB031483259A CN03148325A CN100565796C CN 100565796 C CN100565796 C CN 100565796C CN B031483259 A CNB031483259 A CN B031483259A CN 03148325 A CN03148325 A CN 03148325A CN 100565796 C CN100565796 C CN 100565796C
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CN
China
Prior art keywords
layer
resist
material layer
dimensional
resist structure
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Expired - Fee Related
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CNB031483259A
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English (en)
Chinese (zh)
Other versions
CN1495853A (zh
Inventor
C·P·陶西
P·梅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Hewlett Packard Development Co LP
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Publication date
Application filed by Hewlett Packard Development Co LP filed Critical Hewlett Packard Development Co LP
Publication of CN1495853A publication Critical patent/CN1495853A/zh
Application granted granted Critical
Publication of CN100565796C publication Critical patent/CN100565796C/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/694—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks or redeposited masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4083—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks

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  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
CNB031483259A 2002-06-28 2003-06-30 半导体器件的制造方法和系统 Expired - Fee Related CN100565796C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/184567 2002-06-28
US10/184,567 US6861365B2 (en) 2002-06-28 2002-06-28 Method and system for forming a semiconductor device

Publications (2)

Publication Number Publication Date
CN1495853A CN1495853A (zh) 2004-05-12
CN100565796C true CN100565796C (zh) 2009-12-02

Family

ID=29717967

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031483259A Expired - Fee Related CN100565796C (zh) 2002-06-28 2003-06-30 半导体器件的制造方法和系统

Country Status (5)

Country Link
US (1) US6861365B2 (https=)
EP (1) EP1376663A3 (https=)
JP (1) JP4585745B2 (https=)
CN (1) CN100565796C (https=)
TW (1) TWI292588B (https=)

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US20040065252A1 (en) * 2002-10-04 2004-04-08 Sreenivasan Sidlgata V. Method of forming a layer on a substrate to facilitate fabrication of metrology standards
US7256435B1 (en) * 2003-06-02 2007-08-14 Hewlett-Packard Development Company, L.P. Multilevel imprint lithography
JP2005159294A (ja) * 2003-09-18 2005-06-16 Nec Kagoshima Ltd 基板処理方法及びそれに用いる薬液
EP1702359B1 (en) * 2003-09-29 2009-12-09 International Business Machines Corporation Fabrication method
US8148251B2 (en) * 2004-01-30 2012-04-03 Hewlett-Packard Development Company, L.P. Forming a semiconductor device
US7056834B2 (en) * 2004-02-10 2006-06-06 Hewlett-Packard Development Company, L.P. Forming a plurality of thin-film devices using imprint lithography
US7195950B2 (en) * 2004-07-21 2007-03-27 Hewlett-Packard Development Company, L.P. Forming a plurality of thin-film devices
US7259106B2 (en) * 2004-09-10 2007-08-21 Versatilis Llc Method of making a microelectronic and/or optoelectronic circuitry sheet
US7202179B2 (en) * 2004-12-22 2007-04-10 Hewlett-Packard Development Company, L.P. Method of forming at least one thin film device
US7585424B2 (en) * 2005-01-18 2009-09-08 Hewlett-Packard Development Company, L.P. Pattern reversal process for self aligned imprint lithography and device
US7521313B2 (en) * 2005-01-18 2009-04-21 Hewlett-Packard Development Company, L.P. Thin film device active matrix by pattern reversal process
US8097400B2 (en) * 2005-02-22 2012-01-17 Hewlett-Packard Development Company, L.P. Method for forming an electronic device
US7352376B2 (en) * 2005-03-29 2008-04-01 Hewlett-Packard Development Company, L.P. Apparatus and method for electrophoretic printing device
US7470544B2 (en) * 2005-05-26 2008-12-30 Hewlett-Packard Development Company, L.P. Sensor array using sail
US7994509B2 (en) * 2005-11-01 2011-08-09 Hewlett-Packard Development Company, L.P. Structure and method for thin film device with stranded conductor
US7341893B2 (en) * 2005-06-02 2008-03-11 Hewlett-Packard Development Company, L.P. Structure and method for thin film device
US7533905B2 (en) * 2005-06-02 2009-05-19 Hewlett-Packard Development Company, L.P. Anti-counterfeiting system and method
JP2008543105A (ja) * 2005-06-06 2008-11-27 エヌエックスピー ビー ヴィ クロスバー回路装置の製造方法
KR101107474B1 (ko) * 2005-06-07 2012-01-19 엘지디스플레이 주식회사 소프트몰드와 이를 이용한 패턴방법
FR2887160B1 (fr) * 2005-06-16 2007-09-14 Eastman Kodak Co Procede d'application d'une couche mince discontinue sur un substrat
US7678626B2 (en) * 2005-11-23 2010-03-16 Hewlett-Packard Development Company, L.P. Method and system for forming a thin film device
KR101157966B1 (ko) * 2005-12-29 2012-06-25 엘지디스플레이 주식회사 액정표시소자의 제조방법
WO2007100849A2 (en) 2006-02-27 2007-09-07 Microcontinuum, Inc. Formation of pattern replicating tools
GB2436163A (en) * 2006-03-10 2007-09-19 Seiko Epson Corp Device fabrication by ink-jet printing materials into bank structures, and embossing tool
US7795062B2 (en) * 2007-04-03 2010-09-14 Hewlett-Packard Development Company, L.P. Method of forming a pressure switch thin film device
DE102007044505A1 (de) * 2007-09-18 2009-03-19 Robert Bosch Gmbh Verfahren zum lithographischen Erzeugen von Nano- und/oder Mikrostrukturen, Stempel sowie Substrat
US20090108397A1 (en) * 2007-10-31 2009-04-30 Warren Jackson Thin film device with layer isolation structure
US8765252B2 (en) 2007-11-30 2014-07-01 Hewlett-Packard Development Company, L.P. Thin film device with minimized spatial variation of local mean height
US8021935B2 (en) 2008-10-01 2011-09-20 Hewlett-Packard Development Company, L.P. Thin film device fabrication process using 3D template
US20120113087A1 (en) 2009-06-18 2012-05-10 Taussig Carl P Current-driven-pixel circuits and related methods
KR101549267B1 (ko) * 2009-10-14 2015-09-11 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판의 제조방법
KR101568268B1 (ko) * 2009-10-27 2015-11-11 엘지디스플레이 주식회사 박막트랜지스터 기판 및 그 제조 방법
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JP6646888B2 (ja) * 2015-09-09 2020-02-14 大日本印刷株式会社 凸状構造体、凹状構造体、及び凸状構造体の製造方法
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Also Published As

Publication number Publication date
TWI292588B (en) 2008-01-11
US6861365B2 (en) 2005-03-01
EP1376663A3 (en) 2005-04-13
JP4585745B2 (ja) 2010-11-24
JP2004040092A (ja) 2004-02-05
EP1376663A2 (en) 2004-01-02
US20040002216A1 (en) 2004-01-01
HK1064212A1 (zh) 2005-01-21
CN1495853A (zh) 2004-05-12
TW200400542A (en) 2004-01-01

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