TWI292085B - Resist composition for euv and process for forming resist pattern - Google Patents

Resist composition for euv and process for forming resist pattern Download PDF

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Publication number
TWI292085B
TWI292085B TW94130565A TW94130565A TWI292085B TW I292085 B TWI292085 B TW I292085B TW 94130565 A TW94130565 A TW 94130565A TW 94130565 A TW94130565 A TW 94130565A TW I292085 B TWI292085 B TW I292085B
Authority
TW
Taiwan
Prior art keywords
euv
group
integer
photoresist composition
acid
Prior art date
Application number
TW94130565A
Other languages
English (en)
Chinese (zh)
Other versions
TW200617602A (en
Inventor
Hideo Hada
Taku Hirayama
Daiju Shiono
Takeo Watanabe
Hiroo Kinoshita
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200617602A publication Critical patent/TW200617602A/zh
Application granted granted Critical
Publication of TWI292085B publication Critical patent/TWI292085B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C39/00—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
    • C07C39/12—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings
    • C07C39/15—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings with all hydroxy groups on non-condensed rings, e.g. phenylphenol
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
TW94130565A 2004-09-09 2005-09-06 Resist composition for euv and process for forming resist pattern TWI292085B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004262306A JP2006078744A (ja) 2004-09-09 2004-09-09 Ｅｕｖ用レジスト組成物およびレジストパターン形成方法

Publications (2)

Publication Number Publication Date
TW200617602A TW200617602A (en) 2006-06-01
TWI292085B true TWI292085B (en) 2008-01-01

Family

ID=36036281

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94130565A TWI292085B (en) 2004-09-09 2005-09-06 Resist composition for euv and process for forming resist pattern

Country Status (4)

Country Link
JP (1) JP2006078744A (ja)
KR (1) KR20070057211A (ja)
TW (1) TWI292085B (ja)
WO (1) WO2006027996A1 (ja)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7923192B2 (en) 2004-02-20 2011-04-12 Tokyo Ohka Kogyo Co., Ltd. Base material for pattern-forming material, positive resist composition and method of resist pattern formation
JP3946715B2 (ja) 2004-07-28 2007-07-18 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4468119B2 (ja) 2004-09-08 2010-05-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP4837323B2 (ja) 2004-10-29 2011-12-14 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法および化合物
US7981588B2 (en) 2005-02-02 2011-07-19 Tokyo Ohka Kogyo Co., Ltd. Negative resist composition and method of forming resist pattern
JP4959171B2 (ja) * 2005-04-15 2012-06-20 東京応化工業株式会社 化合物、溶解抑制剤、ポジ型レジスト組成物、レジストパターン形成方法
JP5138157B2 (ja) 2005-05-17 2013-02-06 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
WO2006134811A1 (ja) * 2005-06-13 2006-12-21 Tokyo Ohka Kogyo Co., Ltd. 多価フェノール化合物、化合物、ポジ型レジスト組成物およびレジストパターン形成方法
JP4813103B2 (ja) 2005-06-17 2011-11-09 東京応化工業株式会社 化合物、ポジ型レジスト組成物およびレジストパターン形成方法
JP4732038B2 (ja) 2005-07-05 2011-07-27 東京応化工業株式会社 化合物、ポジ型レジスト組成物およびレジストパターン形成方法
US7875743B2 (en) 2006-10-13 2011-01-25 Honshu Chemical Industry Co., Ltd. Bis(formylphenyl)alkane and novel polynuclear phenol derived from the same
JP2008164904A (ja) * 2006-12-28 2008-07-17 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物およびレジストパターン形成方法
JP2009053665A (ja) * 2007-08-02 2009-03-12 Fujifilm Corp 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP4977747B2 (ja) 2009-12-10 2012-07-18 東京エレクトロン株式会社 基板の処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
JP2015015291A (ja) * 2013-07-03 2015-01-22 東京エレクトロン株式会社 基板処理装置、基板処理システム、基板処理方法及び基板処理用記録媒体
JP6293645B2 (ja) 2013-12-27 2018-03-14 東京エレクトロン株式会社 基板処理システム
JP6337757B2 (ja) 2014-01-20 2018-06-06 東京エレクトロン株式会社 露光装置、レジストパターン形成方法及び記憶媒体

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10123703A (ja) * 1996-10-18 1998-05-15 Fuji Photo Film Co Ltd ポジ型感光性組成物
JP2002099088A (ja) * 2000-09-26 2002-04-05 Yasuhiko Shirota 感放射線性組成物
JP4082201B2 (ja) * 2002-12-12 2008-04-30 Ｊｓｒ株式会社 感放射性樹脂組成物

Also Published As

Publication number Publication date
TW200617602A (en) 2006-06-01
KR20070057211A (ko) 2007-06-04
WO2006027996A1 (ja) 2006-03-16
JP2006078744A (ja) 2006-03-23

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