TWI289338B - Lead frame attached with adhesive film and semiconductor device using the same - Google Patents

Lead frame attached with adhesive film and semiconductor device using the same Download PDF

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Publication number
TWI289338B
TWI289338B TW94106824A TW94106824A TWI289338B TW I289338 B TWI289338 B TW I289338B TW 94106824 A TW94106824 A TW 94106824A TW 94106824 A TW94106824 A TW 94106824A TW I289338 B TWI289338 B TW I289338B
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TW
Taiwan
Prior art keywords
lead frame
adhesive film
resin
film
adhesive
Prior art date
Application number
TW94106824A
Other languages
English (en)
Other versions
TW200527552A (en
Inventor
Yoshiyuki Tanabe
Hidekazu Matsuura
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Hitachi Chemical Co Ltd
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Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW200527552A publication Critical patent/TW200527552A/zh
Application granted granted Critical
Publication of TWI289338B publication Critical patent/TWI289338B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
    • C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C08G59/621—Phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J177/00—Adhesives based on polyamides obtained by reactions forming a carboxylic amide link in the main chain; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/4951—Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
    • C08L2666/02—Organic macromolecular compounds, natural resins, waxes or and bituminous materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
    • C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
    • C09J2301/124—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present on both sides of the carrier, e.g. double-sided adhesive tape
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2463/00—Presence of epoxy resin
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2469/00—Presence of polycarbonate
    • C09J2469/006—Presence of polycarbonate in the substrate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2471/00—Presence of polyether
    • C09J2471/006—Presence of polyether in the substrate
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Description

1289338 (1) 九、發明說明 【發明所屬之技術領域】 本發明係有關半導體用粘著薄膜，含半導體用粘著薄膜 之導線架及使用此導線架之半導體裝置。 【先前技術】 近年，半導體晶片係由高功能大容量化而成大型化，惟 收容此晶片之封裝體的大小則由印刷電路設計上的限制，電 子機器小型化之要求等，乃被要求較小的外形。對應於此種 傾向，已對應於半導體晶片之高密度化及高密度實際安裝的 新穎實際安裝方式乃有若干件被提出著。其中若依於正予提 出的記憶體元件之晶片之上粘著導線的構造時，則可謀求晶 片內佈線或導線結合之合理化，由縮短佈線引起的信號高速 化及封裝體尺度之小型化。 在此種新穎實際安裝形態，於半導體晶片及導線架之所 謂不同種材料之粘著界面會存在其粘著可靠性係對半導體封 裝體之可靠性給予非常大的影響。封裝體組合作等時的能耐 工程溫度之可靠性，粘著作等性當然在由吸濕時、濕熱時等 的粘著可靠性引起的基板實際安裝時之軟焊重流（refi〇w ) 引起的封裝體龜裂現象不致引起一事亦係重要的項目。 向來，於此等的粘著方面，係以糊狀的粘著劑，或耐熱 性基材上塗布粘著劑者正被使用著，至於其方法之一種，有 採用聚醯亞胺樹脂之熱熔型粘著劑薄膜被提出著（參閱曰本 特開平5- 1 05850號公報，特開平5- 1 1 2760號公報，特開平 (2) 1289338 5-1 1 276 1號公報）。然而，熱熔型粘著劑，由於粘著劑樹脂 之T G較高，故粘著時所需的溫度變成非常高，對半導體晶 片或尤其銅製導線架類對被粘著材有給與較大的熱損傷之顧 慮。又由於會賦與低溫粘著性，若降低T G時，則耐熱可靠 性低劣’粘著性樹脂因有的彈性係數高，未能鬆弛由基板實 際安裝時的軟焊重流引起之熱經歷發生的晶片及導線架間之 熱應力，而有所謂發生封裝體龜裂之問題存在。 【發明內容】 發明之揭示 本發明係於半導體裝置提供可低溫粘著的半導體用粘著 薄膜者。 又本發明係提供藉由沖壓边式使此半導體用粘著薄膜貼 合於導線架之指定位置上的含半導體用粘著薄膜之導線架者 〇 本發明係在開發使低溫粘著性及半導體裝置之耐重流龜 裂可同時成立的半導體用粘著薄膜，發現於該粘著劑層採用 含有具有特定的特性之耐熱熱塑性樹脂、環氧樹脂及環氧樹 脂硬化劑之參酚系化合物的粘著劑，可解決前述問題，以至 完成本發明。 亦即，本發明係於支持薄膜之兩面上設有粘著劑層之三 層構造之粘著薄膜，其粘著劑層係與含有（A )玻璃轉移溫 度130〜300°C，吸水率3重量％以下，滲出長度在2mm次下 的耐熱熱塑性樹脂，（B )環氧樹脂及（C )之環氧樹脂硬化 -5- (3) (3)1289338 劑之參酚系化合物而成的半導體用粘著薄膜（第一發明之粘 著薄膜）。 又本發明係與於支持薄膜之兩面上設有粘著劑層之三層 構造之粘著薄膜，其粘著劑層係與含有（A )玻璃轉移溫度 130〜300°C之耐熱熱塑性樹脂，（B)環氧樹脂及（C)環氧 樹脂硬化劑之參酚系化合物而成的半導體用粘著薄膜，前述 三層構造之粘著薄膜之吸水率在3重量％以下，滲出長度在 2mm次下的半導體用粘著薄膜（第二發明之粘著薄膜）有關 〇 又本發明係有關於導線架上貼合上述半導體用粘著薄膜 之含半導體用粘著薄膜的導線架。 又，本發明係與採用上述的半導體用粘著薄膜，使含半 導體用粘著薄膜之導線架及半導體元件粘著而成的半導體裝 置有關。 實施發明而採的最佳形態 第一發明之粘著薄膜所用的耐熱熱塑性樹脂（A )，係 被指玻璃轉移溫度在130〜300°C，吸水率在3重量％以下， 滲出長度在2mm以下之耐熱性樹脂，因此，以採用聚醯亞 胺樹脂及聚醯胺樹脂爲宜。在此，聚醯亞胺樹脂係意指聚醯 亞胺樹脂、聚醯胺醯亞胺樹脂、聚酯醯亞胺、聚醚醯亞胺樹 脂等的醯亞胺基之樹脂。 若玻璃轉移溫度逸出此範圍，吸水率超過3重量％，滲 出長度超過2mm時，則採用本發明之半導體用粘著薄膜予 -6- (4) 1289338 以製造的半導體裝置之耐重流龜裂性會降低。 本發明所使用的耐熱熱塑性樹脂之玻璃轉移溫度，宜爲 180〜250°C，吸水率宜爲2.5重量％以下，較宜爲2 〇重量％ 以下。又滲出長度宜爲1mm以下，較宜爲0.5mm以下。 在此’耐熱熱塑性樹脂之吸水率，係在1 3 〇 °c乾燥耐熱 熱塑性樹脂之薄膜1小時並測定重量後，在2 5 °C之蒸溜水 中浸漬24小時測定重量，可求取（浸漬後之重量-浸漬前之 φ 重量）/浸漬前之重量3 X 1 00 ( % )。耐熱熱塑性樹脂之滲 出長度係在350°C ’ 3MPA’ 1分鐘之條件下加熱壓著由耐熱 熱塑性樹脂而成的1 9mm X 5 0mm，厚度25//m之薄膜之際， 在長邊方向之中央部測定由原先的薄膜長邊已滲出至垂直方 向的樹脂之長度者。 又於第二發明之粘著薄膜所用的耐熱熱塑性樹脂（A ) ’由與上述第一發明相同的理由，玻璃轉移溫度爲13〇〜3〇〇 °C。可使用的耐熱熱塑性樹脂（A )之具體例及較佳的例子 φ ，均與第一發明所記載者相同。在第二發明之粘著薄膜，非 爲耐熱熱塑性樹脂本身的吸水率及滲出長度，至於於支持薄 膜之兩面上設置粘著劑層之三層構造的半導體用粘著薄膜， 係規定成吸水率3重量％以下，滲出長度2mm以下。各自 的較佳的範圍，係與上述第一發明相同。 且，於第二發明之粘著薄膜之吸水率，係除.採用三層構 造之粘著薄膜取代耐熱熱塑性樹脂（A )之薄膜外，餘以與 第一發明記載的相同方法測定，可予求取。又，第二發明之 粘著薄膜之滲出長度，係採用三層構造之粘著薄膜（亦即， (5) 1289338 粘著薄膜之厚度未予限制）取代耐熱熱塑性樹脂（A )之薄 膜’將該薄膜裁切成與上述相同的大小（19mm x5 Omm )， 進行與第一發明記載者相同的方法之測定，可予求取。 至於本發明之半導體用粘著薄膜，以兼具上述第一發明 之特徵及第二發明之特徵爲宜。 以下說明第一發明之粘著薄膜，第二發明之粘著薄膜， 使用該等之含半導體用粘著薄膜之導線架及半導體裝置。 本發明之粘著薄膜內所含的環氧樹脂，若爲分子內具有 至少二個環氧基者時即可，並未予特別限定。有以下述式（ 1 )〜（3 )表示的化合物等。 C^2-^CHCH2—Zi— CH2CH-CH2 (!) (2) /〇\ /〇\ CH2-CHCH2\ /CH2CH- ch2 .z2 cj^〉chch/ nch2ch- ch2
(3) / CH2CH — CH2 CH2-CHCH2—z3 \CH2CH-CH2 、〇/ (式內，表示二價之有機基、z2表示四價之有機基，z3表 示三價之有機基）。 至於此種環氧樹脂，例如可舉出雙酚A二縮水甘油基醚 、雙酚F二縮水甘油基醚、雙酚AD二縮水甘油基醚、雙酚 S二縮水甘油基醚、1，6-二甲酚二縮水甘油基醚、氫化雙酚 -8- (6) (6)1289338 A二縮水甘油基醚、1，4·環己烷二甲醇二縮水甘油基醚、氧 基二酚二縮水甘油基醚、環氧乙烷加成物雙酚Α二縮水甘油 基醚、環氧丙院加成物雙酚A二縮水甘油基醚、聚乙二醇二 縮水甘油基醚、聚丙二醇二縮水甘油基醚、新戊二醇二縮水 甘油基醚、1,6-己二醇二縮水甘油基醚、酚酚醛淸漆樹脂之 縮水甘油基醚、甲酚酚醛淸漆樹脂之縮水甘油基醚、萘樹脂 之縮水甘油基醚、三官能縮水甘油基醚、四官能之縮水甘油 基醚、二環戊二烯酚樹脂之縮水甘油基醚、二元酸之縮水甘 油基酯、三官能之縮水甘油基胺、四官能之縮水甘油基胺、 萘樹脂之縮水甘油基胺、聚硫醚改質環氧樹脂、聚丁二烯改 質環氧樹脂等。於此等內含有一官能環氧基體亦可。 至於環氧樹脂，宜爲環氧當量50至600者，較宜爲 150〜500 者。 本發明之粘著劑層所含有的環氧樹脂硬化劑，係於分子 內具有三個羥基苯基之參酚系化合物。該種參酚系化合物之 較宜者，係以下述一般式（A)表示。
惟式（A)中，R 1〜R 係各自獨立的表不氫，碳1〜10 之烷基，碳數5〜10之環烷基，苯基或羥基。至於R 5，宜爲 氫，碳1〜10之烷基，碳數5〜10之環烷基或苯基，較宜爲氫 或碳數1〜10之烷基。又D表示四價之有機基。四價有機基 (7) 1289338 之例如下述所示。
I I I 一 C一 一 CH2—C一 一 CH2CH2 — οι I I
h3c-c—ch3 般式（A )中之三D- R 5之較具體的例子，係如下所 示 • 9一 R5 R5 — ch2, c一 一 ch2 ch2 — c一 r5
CICIC
5 R I cl 3 Η
至於此種參酚系化合物，例如可舉出有：4,4\4’’-亞甲參 酚、4,4’-〔 1-〔 4-〔 1- ( 4-羥基苯基）-1-甲基乙基〕苯基〕 亞乙基〕雙酚、4,4’，4"-次乙參〔2-甲基酚〕、4,4\4’’-次乙參 酚、4,4’-〔（ 2-羥基苯基）亞甲〕參〔2-甲基酚〕、4,4、〔 (4-羥基苯基）亞甲〕雙〔2-甲基酚〕、4,4'·〔（ 2-羥基苯 基）亞甲〕雙〔2,3-二甲基酚〕、4,〔（ 4-羥基苯基）亞甲 〕雙〔2,6-二甲基酚〕、4,4'-〔（3-羥基苯基）亞甲〕雙〔 2,3-二甲基酚〕、2,2、〔（ 2-羥基苯基）亞甲〕雙〔3,5-二甲 - 10- (8) (8)1289338 基酚〕、2,2’-〔 （ 4·羥基苯基）亞甲〕雙〔3,5-二甲基酚〕 、4,4·-〔 （ 2-羥基苯基）亞甲〕雙〔2,3,5-三甲基酚〕、4,4·- 〔（2-羥基苯基）亞甲〕雙〔2,3,6-三甲基酚〕、4,4'-〔（3-羥基苯基）亞甲〕雙〔2,3,6-三甲基酚〕、4,4、〔（ 4-羥基 苯基）亞甲〕雙〔2,3,6-三甲基酚〕、4,4’-〔 .（ 2-羥基苯基 )亞甲〕雙〔2-環己基-5-甲基酚〕、4,4·-〔（ 3-羥基苯基） 亞甲〕雙〔2-環己基-5-甲基酚〕、4,4〜〔（4-羥基苯基）亞甲 〕雙〔2-環己基-5-甲基酚〕、4,4、〔（3，4-二羥基苯基）亞甲 〕雙〔2-甲基酚〕、4,4^〔（3,4-二羥基苯基）亞甲〕雙〔 2,6-二甲基酚〕、4,4’-〔（3,4-二羥基苯基）亞甲〕雙〔2,3,6-三甲基酚〕、4-〔雙（3-環己基-4-羥基-6-甲基苯基）甲基 〕-1,2-苯二醇、4,4’-〔（2-羥基苯基）亞甲基〕雙〔3-甲基酚 〕、1,3,3-參（4-羥基苯基）丁烷、4,4·-〔（2-羥基苯基）亞甲〕 雙〔2-異丙基酚〕、4,4’-〔（ 3-羥基苯基）亞甲〕雙〔2-異 丙基酚〕、4,4’-〔（心羥基苯基）亞甲〕雙〔2-異丙基酚〕 、2,2’-〔（3-羥基苯基）亞甲〕雙〔3,5,6-三甲基酚〕、2,2^〔 (4-羥基苯基）亞甲〕雙〔3,5,6-三甲基酚〕、4,4入〔（2-羥基苯 基）亞甲〕雙〔2-環己基酚〕、4,4^〔（3·羥基苯基）亞甲〕雙 〔2-環己基酚〕、4,4、〔1-〔4-〔1-(4-羥基-3,5-二甲基苯基 )·1-甲基乙基〕苯基〕亞乙〕雙〔2,6-二甲基酚〕、4,4\4”-次甲基參〔2-環己基-5-甲基酚〕、4,4、〔 1-〔 4-〔 M3-環己 基-4-羥基苯基）-卜甲基乙基〕苯基〕亞乙〕雙〔2-環己基酚 〕、2,2’-〔（3,4-二羥基苯基）亞甲〕雙〔3,5-二甲基酚〕、 4,4、〔（3,4-二羥基苯基）亞甲〕雙〔2·(異丙基）酚〕、2,2、〔 -11 - 1289338 Ο) (3,4-二羥基苯基）亞甲〕雙〔3,5,6-三甲基酚〕、4,4、〔（3,4· 二經基苯基）亞甲〕雙〔2 -環己基酌〕、α,α’，α’’-參（4 -經基 苯基）-1，3,5-三異丙基苯等。 於本發明之粘著薄膜所用的粘著劑，對耐熱熱塑性樹脂 100重量分宜爲使用環氧樹脂1〜100重量分，較宜爲使用 2〜50重量分，前述的環氧樹脂硬化劑宜爲使用〇.〇2〜120重 量分，較宜爲0.1〜80重量分，更宜爲1〜20重量分。 φ 若環氧樹脂之使用量超過1 00重量分，環氧樹脂硬化劑 之使用量超過1 20重量分時，則有薄膜形成性變差的傾向。 又，環氧樹脂之使用量未滿1重量分及環氧樹脂硬化劑之使 用量未滿0.02重量時’在低溫的粘著性有變差且成爲粘著 不良。 於本發明之粘著薄膜所用的粘著劑，視必要時使用硬化 促進劑亦可，若爲爲使環氧樹脂硬化而用者時即可，並未予 特別限制。例如’可採用咪唑類、二氰基二醯胺衍生物、二 φ 羧酸二肼、三苯基膦、四苯基鳞四苯基硼酸鹽、2-乙基-4-甲 基咪唑四苯基硼酸鹽、1，8-二氮雜環（5.4.0)十一烯-7-四苯 基硼酸鹽等。此等係可單獨使用一種，亦可合倂使用二種以 上。使用硬化促進劑時之添加量，對環氧樹脂1 〇〇重量分， 由儲存安定性通常爲50重量分以下，例如〇.〇1〜50重量分， 宜爲20重量分以下的範圍。 又，於本發明之粘著薄膜所用的粘著劑，以提高與支持 薄膜間之附著性之目的，亦可添加偶合劑，例如可使用7 · (2-胺基乙基）胺基丙基三甲氧基矽烷、7 - ( 2-胺基乙基） •12- (10) 1289338 胺基丙基甲基二甲氧基矽烷、胺基矽烷、7 -甲基丙烯氧基 丙基三甲氧基矽烷、7-環氧丙氧基丙基三甲氧基矽烷、甲 基三甲氧基矽烷、甲基三乙氧基矽烷、乙烯基三乙氧基矽烷 、六甲基二矽氮烷、7 -苯胺基丙基三甲氧基矽烷、乙烯基 三甲氧基矽烷等的矽烷偶合劑，及異丙基三異硬脂醯基鈦酸 鹽、異丙基三辛醯基鈦酸鹽、異丙基三十一烷基苯磺基鈦酸 鹽、異丙基參（二辛基焦磷酸鹽）鈦酸鹽等鈦酸鹽系偶合劑 φ 及乙醯烷氧基鋁異丙酸酯等鋁系偶合劑等。 偶合劑之添加量，對耐熱熱塑性樹脂1 00重量分，由耐 熱性、與導線架間之粘著性觀之，宜爲0.5〜20重量分，較 宜爲2〜1 0重量分。 至於本發明所用的支持薄膜，較宜使用聚醯亞胺、聚醯 胺、聚硕、聚伸苯基硫醚、聚醚醚酮、聚芳香酯、聚碳酸酯 等的絕緣性耐熱性樹脂薄膜。支持薄膜之厚度並未予特別限 定者，惟通常爲5〜200//m，較宜爲20〜75#m。 φ 至於支持薄膜之玻璃轉移溫度，宜爲使用較本發明所用 ^ 的接著劑之玻璃轉移溫度高者，宜爲200 °C以上，較宜爲 25 0°C以上者。支持薄膜之吸水率宜爲3重量％以下，較宜 爲使用2重量％以下者。 至於本發明所用的支持薄膜，宜爲具有玻璃轉移溫度 250°C以上，吸水率2重量％以下，熱膨脹係數3xl(T5/°C 以下的物性之絕緣性耐熱性樹脂薄膜爲宜，由以上的觀點之 以聚醯亞胺薄膜爲尤宜。 支持薄膜係以處理表面並供使用者爲宜。此爲提高支持 -13- (11) (11)1289338 薄膜與粘著劑層之粘著強度，防止支持薄膜及粘著劑層間之 剝離所致。 至於支持薄膜之表面處理方法，雖亦可使用鹼處理、矽 烷偶合處理等的化學處理、砂消光處理等的物理處理、電漿 處理、電暈處理等任一種處理，然而因應粘著劑之種類若採 用最適合的處理時即可，至於本發明施於支持薄膜之表面處 理，以化學處理或電漿處理爲尤其合適的。 至於支持薄膜上形成粘著劑層之方法，雖未予特別.限定 ，惟通常係成爲粘著劑層之耐熱熱塑性樹脂、環氧樹脂及環 氧樹脂硬化劑溶解於有機溶劑中，作爲粘著劑淸漆。在此所 用的有機溶劑，若爲可均勻溶解或混練上述材料時即可並未 予特別限定，至於此種溶劑，例如可舉出二甲基甲醯胺、二 甲基乙醯胺、N-甲基-2-吡咯烷酮、二甲基亞硕、二乙二醇 二甲基醚、甲苯、苯、二甲基、甲乙酮、四氫D夫喃、二曙烷 等。 將如上述而得的粘著劑淸漆塗布於支持薄膜上後加熱處 理並進行溶劑之去除或醯亞胺化。二次進行此方法，可製得 三層構造之粘著薄膜。 爲將已塗布粘著劑淸漆之支持薄膜去除溶劑而進行加熱 處理時的處理溫度，若爲可去除溶劑之溫度即可。 塗布方法雖未予特別限定，惟例如可舉出輥塗、來回輥 塗、照相凹板塗布、棒塗、常用塗布等。又使支特薄膜通過 粘著劑淸漆中並予塗布即可，惟厚度之控制上即成困難。 至於經予形成於支持薄膜上的各粘著劑層之厚度，宜爲 -14- (12) 1289338 1〜75//m，較宜爲10〜30//m。粘著劑層之厚度未滿1//Π1時 ，粘著性、生產性低劣，若超過75 μ m者時，則成本變高。 如此而得的粘著薄膜，係取第1圖般的構成。此薄膜係 可使用作半導體用之粘著劑。於第1圖，1爲支持薄膜、2 爲粘著劑層。 若採用本發明之粘著薄膜時，可作業性、良品率良好且 簡單的製造出可靠性優越的含粘著薄膜之導線架。例如，將 φ 本發明之粘著薄膜裁切成指定大小的薄膜片予以粘著至導線 架之方法。至於粘著薄膜之切斷方法，若爲可將薄膜正確的 切斷成指定形狀之方法，則不論任何方法均可，惟若考慮作 業性時，則採用沖壓模具並將粘著薄膜予以切斷，保持原狀 的粘著經予沖壓的薄膜片至導線架上的較宜的。至於此時之 粘著溫度，係指通常150〜300°C，宜爲200〜25(TC。粘著溫 度未滿150°C時，未能獲得足夠的粘著強度，若超過300°C 時，則有粘著劑層之熱劣化或導線架之氧化的顧慮。粘著壓 φ 力係通常 0.1〜20MPA，宜爲 0.3〜10MPA。粘著壓力未滿 0.1MPA，粘著強度有不足的傾向，若超過20MPA時，則粘 著劑滲出至指定的位置以外，有尺度精確度變差的顧慮。加 壓時間若爲以前述的粘著溫度，粘著壓力可粘著的時間即可 ，惟若考慮作業性時，則宜爲0.3〜60秒，較宜爲0.5〜10秒 〇 又若採用本發明之粘著薄膜時，則可作業性、良品率良 好且簡單的製造出可靠性優越的半導體裝置。 本發明之粘著薄膜，係於採用銀漿之習用構造的構裝體 -15- (13) (13)1289338 ，可採用於採用多數晶片之多晶片封裝體或C0L (導線上晶 片）構造之封裝體以取代銀漿，惟尤其較合適採用於LOC ( Lead on chip，導線在晶片上）構造之半導體裝置。因可低 溫粘著，在LOC構造之中，不僅習用的TS〇P (Thin Small Outline Peckage)構造，以 QFP ( Quad Flatpack Package)構 造，堆疊（suck)構造之半導體裝置亦係合適的。 例如採用如前述方式製作的含粘著薄膜之導線架’於導 線架之未予粘著的另一單面之粘著劑層上粘著半導體晶片後 ，進行粘著薄膜之硬化處理，以金線等接合導線架及半導體 晶片，以環氧樹脂等的成形材料進行轉移成形並令封裝，可 製造出LOC構造之半導體裝置。 至於半導體晶片之粘著溫度，通常指爲150〜30CTC，宜 爲200~250°C。粘著溫度未滿150°C時，未能獲得足夠的粘 著強度，若超過300°C時，則粘著劑層之熱劣化或導線架之 氧化即成爲問題。粘著壓力通常指爲 0.1〜20MPA，宜爲 0.3〜10MPA，粘著壓力未滿0.1MPA，未能獲得足夠的粘著強 度，若超過20MPA時，則粘著劑會滲出至指定的位置以外 ，有尺度精確度變差的顧慮，半導體晶片有受破壞的顧慮。 加壓時間雖爲以前述粘著溫度，粘著壓力可粘著的時間 即可，惟若考慮作業性時，宜爲0.3〜60秒，較宜爲0..5〜10 秒。 至於硬化處理之溫度，通常指爲150〜200 °C ，宜爲 170〜18(TC。硬化處理溫度未滿150t時，則成爲硬化不足。 若超過200t時，則有導線架會氧化的顧慮。硬化時間通常 -16- (14) (14)1289338 15分鐘〜75分鐘，宜爲30分鐘〜60分鐘。硬化時未滿15分 鐘’則成爲硬化不足，若超過7 5分鐘時，則作業性變成低 劣。惟粘著薄膜之硬化處理，係以兼具環氧樹脂等的成形材 料進行轉移成形並予封裝係的封裝材硬化步驟係有可能的。 以下利用實施例說明本發明，惟本發明並非受此等實施 例所限制者。 【實施方式】 實施例1〜4，比較例1 採用下述聚醯亞胺A〜C作爲耐熱熱塑性樹脂，如表2〜3 之配合表所示。調合Ν〇·1〜5之淸漆（No.l〜4:各自爲與本 發明之實施例1〜4有關者，Ν〇·5 :與比較例1有關者）。 聚醯胺醯亞胺A、Β及C，係採用以下述方法予以合成 者0 •聚醯胺醯亞胺A之合成 在氮氣氣圍下，將2,2-雙〔4- (4-胺基苯氧基）甘基〕 丙烷21 0G ( 0.5莫耳）放入已安裝有溫度計、攪拌機、氮氣 引入管及分飽管之5L四頸燒瓶內，並溶解於N -甲基-2 -吡咯 烷酮1200G內。將此溶液冷卻至·iot：，在此溫度下添加偏 苯三酸單氯化物105.3G ( 0.5莫耳）至溫度不超過-5。(：。俟 偏苯三酸單氯化物溶解後，添加三乙胺76G至溫度不超過5 °C。在室溫下繼續攪拌1小時後，使在18(TC反應9小時並 使醯亞胺化反應結束。將所得的反應液投入甲醇中並使聚合 -17- (15) (15)1289338 物單離出。將此物乾燥後，溶解於二甲基甲醯胺，投入甲醇 中並再度單離出聚合物。其後，而得減壓乾燥並精製的聚醯 胺醯亞胺A之粉末。將所得的聚醯胺醯亞胺A之粉末60G 溶解於N-甲基-2-吡咯烷酮200G內而得粘著劑淸漆。將此淸 漆流展於玻璃板上至成90// m厚度，在100°C乾燥1〇分鐘 後，由玻璃板剝下，固定於鐵框並在200°C乾燥10分鐘，在 300°C乾燥10分鐘，而得厚度25// m之粘著劑薄膜。所得的 薄膜之玻璃轉移溫度爲230°C，吸水率1.8重量％，滲出長 度 0.2mm 〇 •聚醯胺醯亞胺B之合成 在氮氣氣圍下’將2,2-雙〔4- ( 4-胺基苯氧基）苯基〕 丙烷143.5G ( 0.35莫耳）、1，3-雙（胺基丙基）四甲基二矽 氧烷37·2G ( 0.15莫耳）放入已安裝有溫度計、攪拌機、氮 氣引入管及分餾塔之5L四頸燒瓶內，並溶解於N-甲基-2-毗 咯烷酮1 200G內。將此溶液冷卻至-l〇°C，在此溫度下添加 偏苯三酸單氯'化物105.3G ( 0.5莫耳）至溫度不超過-fC。 俟偏苯三酸單氯化物溶解後，添加三乙胺76G至溫度不超過 。在室溫下繼續攪拌1小時後，使在180°C反應9小時並 使醯亞胺化反應結束。將所得的反應液投入甲醇中並使聚合 物單離出。將此物乾燥後，溶解於二甲基甲醯胺，投入甲醇 中並再度單離出聚合物。其後，而得減壓乾燥並予精製的聚 醯胺醯亞胺B之粉末。將所得的聚醯胺醯亞胺B之粉末60G 溶解於N-甲基-2-吡咯烷酮200G內而得粘著劑淸漆。將此淸 -18- (16) 1289338 漆流展於玻璃板上至成90 // m厚度，在100°c乾燥ι〇分鐘 後，由剝離板剝下，固定於鐵框並在2〇〇°C乾燥1 0分鐘，在 300°C乾燥10分鐘，而得厚度25// m之粘著劑薄膜，所得的 薄膜之玻璃轉移溫度爲1 9 0 °C，吸水率1 · 5重量％，声出長 度爲0.4mm。 •聚醯胺醯亞胺C之合成 φ 在氮氣氣圍下，將2,2-雙〔心（4-胺基苯氧基）苯基〕 丙烷61.5GC0.15莫耳），ι，3-雙（胺基丙基）四甲基二矽 氧烷8 6 · 8 G ( 0 · 3 5莫耳）放入已安裝有溫度計、攪拌機、氮 氣引入管及分餾塔之5L四頸燒瓶內，並溶解於甲基-2-吡 咯烷酮1 200G內。將此溶液冷卻至_ 1 〇，在此溫度下添加 偏苯三酸單氯化物1()5.3G(0.5莫耳）至溫度不超過。 俟偏苯三酸單氯化物溶解後，添加三乙胺76G至溫度不超過 5 °C。在室溫下繼續攪拌1小時後，使在180它反應9小時並 φ 使醯亞胺化反應結束。將所得的反應液投入甲醇中並使聚合 物單離出。將此物乾燥後，溶解於二甲基甲醯胺，投入甲醇 中並再度單離出聚合物。其後，而得減壓乾燥並予精製的聚 醯胺醯亞胺C之粉末。將所得的聚醯胺醯亞胺C之粉末60G 溶解於N-甲基-2-吡咯烷酮200G內而得粘著劑淸漆。將淸漆 流展於玻璃板上至成90// m厚度，在100°C乾燥10分鐘後 ，由剝離板剝下，固定於鐵框並在200°C乾燥1 0分鐘，在 300°C乾燥10分鐘，而得厚度25 // m之粘著劑薄膜，所得的 薄膜之玻璃轉移溫度爲1 〇°C，吸水率1.0重量％，滲出長度 -19- (17) 1289338 爲 3·5mm 〇 表1 耐熱熱塑性樹脂 玻璃轉移溫度 吸水率 滲出長度 (°C) (重量％) (mm) 聚醯胺醯亞胺A 230 1.8 0.2 聚醯胺醯亞胺B 190 1.5 0.4 聚醯胺醯亞胺C 100 1.0 3.5 且，於表2〜3，各種記號係意指下述者。 YDCN-702 :東都化成（股）製造，甲酚酚醛淸漆型環 氧樹脂（環氧當量〗20)， ESCN-195 :住友化學工業（股）製造，甲酚酚醛淸漆型 環氧樹脂（環氧當量200 )， N865-E :大日本油墨（股）製造，雙酚酚醛淸漆型環氧 Φ 樹脂（環氧當量208 )， BEO-60E :新日本理化學（股）製造，環氧乙烷加成物 雙酚型環氧樹脂（環氧當量3 7 3 )， DEM-100:新日本理化學（股）製造，環己院二甲醇型 環氧乙烷樹脂（環氧當量155)，
TrIS-P-TC :本州化學（股）製造，參酌酣醒淸漆（〇H 當量160) ’化學名α’，α 參（4·經基苯基）-i，3,5 -三異 丙基苯；式（A1 )，
TdS-P-PA :本州化學（股）製造，參酚酚醛淸漆（〇H
- 2CK (18) 1289338 當量141)，化學名4,4’〔卜〔4-〔卜（4-羥基苯基）-卜甲基 乙基〕苯基〕亞乙〕參酚；式（A2)，
TrISP-PHBA :本州化學（股）製造，參酚酚醛淸漆（ 〇H當量97 )，化學名4,4'，4"-次甲基參酚；式（A3 )，
TrISP-HAP ··本州化學（股）製造，參酚酚醛淸漆（〇H 當量102)，化學名4,4'，4"-次乙基參酚；式（A4)，
OH
HO
Γ Φ
OH (a2)
OH
HO
Φ
CH
OH
OH 1289338
(a4) DMAC :二甲基乙醯胺 DMF :二甲基甲醯胺 NM P : N-甲基-2-0比咯烷酮
表2 配合表 成分 淸漆編號 No.l No.2 No.3 No.4 耐熱熱塑性樹脂 A B A B 重量分 100 100 100 100 環氧樹脂 YDCN-702 ESCN195 N-865 BEO-60E 重量分 10 20 25 20 環氧樹脂硬化劑 TrisP-TC TrisP-PA TrisP-PHBA TrisP-HAP 重量分 7.3 14.1 11.7 5.5 溶劑 DMAc NMP DMF DMAc 重量分 500 350 450 500
-22- (20) 1289338 表3 配合表 成分 淸漆編號 No.5 耐熱熱塑性樹脂 C 重量分 100 環氧樹脂 YDCN-702 重量分 10 環氧樹脂硬化劑 TrISP-TC 重量分 7.3 溶劑 DMAC 重量分 500
於利用厚度50 // m之化學處理已施加表面處理的 聚醯亞胺薄膜（宇部興產（股）製造，商品名：Yupyrex S )之各面上塗布此等的淸漆至成100//m之厚度，於各面上 在l〇〇°C乾燥10分鐘，在200°C乾燥10分鐘，而得兩面上 具有厚度25//m之粘著劑層之如第1圖構成的半導體用粘著 薄膜（實施例1〜4 :各自使用淸漆Ν ο · 1〜4 ;比較例1 :使用 淸漆Νο·5 )。 對實施例1〜4及比較例1之粘著薄膜之薄膜形成性、粘 著性、耐重流龜裂性道行確認。評估結果示於表4。 又測定在實施例1〜4及比較例1製作的三層構造之粘著 薄膜之吸水率及滲出長度。結果示於表5。 -23- (21) (21)1289338 〈薄膜形成性評估〉 確認以前述條件製作的粘著薄膜之粘著劑層有無粘糊狀 〇 以無粘糊狀者爲良好，有粘糊狀者則爲不良。 〈低溫粘著性評估〉 採用沖壓模具將粘著薄膜沖壓成短薄本狀，使置放於厚 度0.15mm之銅合金製之導線架上並使能頂住0.2mm間隔， 0·2ππη寬度之內部導線，在250°C以3MPA之壓力加壓3秒 鐘並予壓著，製作含粘著薄膜之導線架。將此含粘著薄膜之 導線架使由2m高度落下至地面時，進行粘著薄膜片有無脫 落之評估。以粘著薄膜片無脫落者爲良好，有脫落者爲不良 〈耐重流龜裂性評估法〉 於含以粘著性評估試驗製作的粘著薄膜之導線架的粘著 劑層面上，在250°C之溫度以3MPA之壓力加壓半導體元件 3秒鐘予以壓著，其後以金線將導線架及半導體元件予以導 線接合並用聯苯系環氧樹脂成形材料（日立化成工業（股） 製造，商品名：CEL-9200 )進行轉移成形予以封裝，在175 °C硬化6小時後，製作第2圖所示的半導體裝置。於第2圖 、3表示粘著薄膜，4表示半導體元件，5表示導線架，6表 示封裝材，7表示接合導線，8表示匯流條（bus bar )。 -24 - (22) 1289338 將所得的半導體裝置於溫度85t，濕度85% R Η之高 溫高濕下靜置168小時後，通過已溫度設定的半導體裝置表 面之最高溫度在240°C保持20秒鐘之1 R重流爐內，藉由在 室溫靜置重複冷卻處理二次，觀察有無龜裂現象，以無龜裂 者爲良好，有龜裂者爲不良。 表4 粘著薄膜之特性評估結果 特性 實施例1 實施例2 實施例3 實施例4 比較例1 薄膜形成性 良好 良好 良好 良好 良好 低溫粘著性 良好 良好 良好 良好 良好 耐重流龜裂性 良好 良好 良好 良好 不良 表5 三層構造之粘著薄膜之吸水率及滲出長度 (支持薄膜：l〇〇//m、粘著劑層：各25/zm) 粘著薄膜之吸水率 (重量％ ) 粘著薄膜之滲出長度 (mm ) 實施例1 1.8 0.3 實施例2 1.7 0.4 實施例3 1.8 0.3 實施例4 1.7 0.5 比較例1 1.4 3.8 實施例1〜4不論何者均滿足本發明規定的項目，此等在 薄膜形成性、低溫粘著性、耐重流龜裂性方面係良好的。 -25- (23) 1289338 比較例1係在耐熱熱塑性樹脂之T G及滲出長度，與粘 著薄膜之滲出長度均在超出本發明規定的値，耐重流龜裂性 方面係低劣的。 產業上之可利用性 本發明之半導體用粘著薄膜係在低溫可粘著，尤其在製 造已採用銅製導線架之含粘著薄膜的導線架方面.係有用的。 φ 又採用此含粘著薄膜之導線架而予製造的半導體裝置，係耐 重流龜裂性優越，具有較高的可靠性。 【圖式簡單說明】 第1圖爲本發明之半導體用粘著薄膜之截面圖。 第2圖爲已使用本發明之半導體用粘著薄膜之半導體裝 置之截面圖。 【主要元件符號說明】 1 :支持薄膜 2 :粘著薄膜 3 :粘著薄膜 4 :半導體元件 5 :導線架 6 :封裝材 7 :接合導線 8 :匯流條 -26-

Claims (1)

  1. (1) 1289338 十、申請專利範圍 1 · 一種含粘著薄膜之導線架，其係於導線架之所定 位置上粘著裁成所定大小之粘著薄膜所成的導線架，其特 徵爲該粘者薄膜具有在支持薄膜之兩面上設置粘著劑層的 三層構造，該粘著劑層係由含有 (A )玻璃轉移溫度爲1 3 0〜3 0 0 °C，吸水率爲3重量 %以下，滲出長度爲2mm以下的耐熱熱塑性樹脂 • ( B )環氧樹脂及 (c )環氧樹脂硬化劑之參酚系化合物所成。 2 . —種含粘著薄膜之導線架，其係於導線架之所定 位置上粘著裁成所定大小之粘著薄膜所成的導線架，其特 徵爲該粘著薄膜具有在支持薄膜之兩面上設置粘著劑層的 三層構造，該粘著劑層係由含有 (A )玻璃轉移溫度爲1 3 〇〜3 〇 〇艺的耐熱熱塑性樹脂 (B )環氧樹脂及 • ( c )環氧樹脂硬化劑之參酚系化合物所成， 該三層構造之粘著薄膜之吸水率爲3重量％以下，滲 出長度爲2mm以下。 3 ·如申請專利範圍第1或2項之含粘著薄膜之導線 架’其中粘著劑層爲含有耐熱熱塑性樹脂（A) 1〇〇重量 份，環氧樹脂（B ) 1〜1 〇〇重量份及環氧樹脂硬化劑（C )0.02〜120重量分所成。 4 ·如申請專利範圍第1或2項之含粘著薄膜之導線 架’其中耐熱熱塑性樹脂（A )係聚醯亞胺樹脂、聚醯胺 -27- (2) 1289338 醯亞胺樹脂、聚目旨醯亞胺樹脂、聚醚醯亞胺樹脂或聚醯胺 樹脂。 5.如申請專利範圍第1或2項之含粘著薄膜之導線 架，其中環氧樹脂硬化劑（C )係以下述一般式（a )
    a ) (式中，Ri〜Rio係各自獨立的氫、碳數1〜10之院基、 碳數5〜10之環院基、芳基或烴基，D係四價之有機基） 袠示的參酚化合物。 6·如申請專利範圍第5項之含粘著薄膜之導線架， 其中一般式（〇中之D爲 一 C- 一 CH2 一 C— CH2CH2 —
    7 ·如申請專利範圍第6項之含粘著薄膜之導線架， 其中一般式（a)中之R5係氫或碳數1〜10之烷基。 8 .如申請專利範圍第7項之含粘著薄膜之導線架， 其中一般式（a )中之三D-R5係 -28- (3)1289338 - 0- R5 〜一 CH2- C— - CH2CH2 - 仏 CH3 c—r5 ch3 或
    9.如申請專利範圍第1或2項之含粘著薄膜之導線 架，其中支持薄膜係選自由聚醯亞胺、聚醯胺、聚碾、聚 苯硫醚、聚醚醚酮、聚芳香酯及聚碳酸酯所成群之絕緣性 耐熱性樹脂薄膜。 1 0 . —種半導體裝置，其特徵係具備： 導線架；被裁成所定大小，粘著於導線架之內.導線的 粘著薄膜；被粘著於前述粘著薄膜之粘著劑層面的半導體 元件；金屬線接合導線架與半導體元件的金屬的半導體裝 置，其中該粘著薄膜具有在支持薄膜之兩面上設置粘著劑 層的三層構造，該粘著劑層係由含有 (A )玻璃轉移溫度爲1 3 〇〜3 0 0 °C，吸水率爲3重量 %以下’滲出長度爲2 mm以下的耐熱熱塑性樹脂 (B )環氧樹脂及 (c )環氧樹脂硬化劑之參酚系化合物所成者。 11· 一種半導體裝置，其特徵係具備： 導線架；被裁成所定大小，粘著於導線架之內導線的 粘著薄膜；被粘著於前述粘著薄膜之粘著劑層面的半導體 元件；金屬線接合導線架與半導體元件的金屬的半導體裝 >29- (4) 1289338 置，其中該粘著劑層係由含有 (A)玻璃轉移溫度爲130〜300°C的耐熱熱塑性樹脂 (B )環氧樹脂及 (c )環氧樹脂硬化劑之參酚系化合物所成， 該三層構造之粘著薄膜之吸水率爲3重量％以下，滲 出長度爲2mm以下者。 1 2 ·如申請專利範圍第1 0或1 1項之半導體裝置，其 φ 中粘著劑層爲含有耐熱熱塑性樹脂（A ) 1 0 0重量份，環 氧樹脂（B ) 1〜100重量份及環氧樹脂硬化劑（c ) 〇 〇2 〜120重量分所成。 1 3 ·如申請專利範圍第1 〇或1 1項之半導體裝置，其 中耐熱熱塑性樹脂（A )係聚醯亞胺樹脂、聚醯胺醯亞月安 樹脂、聚酯醯亞胺樹脂、聚醚醯亞胺樹脂或聚醯胺樹脂。 1 4 ·如申請專利範圍第1 0或1 1項之半導體裝置，其 中環氧樹脂硬化劑（C )係以下述一般式（a ).
    (式中，R】〜R]G係各自獨立的氫、碳數1〜10之院基 碳數5〜10之環烷基、芳基或烴基，D係四價之有機基） 表示的參酚化合物。 1 5 ·如申請專利範圍第1 4項之半導體裝置，其中〜 般式（a )中之D爲 -30- (5)1289338 一 C- CH2CH2 —C-
    -CH2 一 οι 1 6.如申請專利範圍第1 5項之半導體裝置，其中一 般式（a )中之R5係氫或碳數1〜1 0之烷基。 1 7 .如申請專利範圍第1 6項之半導體裝置，其中一 般式（a)中之三D — R5係 r5 — ch2_c— ch3 一 0mTVLr5 ch3 或 ch2ch2 一 c—r5
    h3c — c—ch3 1 8 .如申請專利範圍第1 0或1 1項之半導體裝置，其 中支持薄膜係選自由聚醯亞胺、聚醯胺、聚硕、聚苯硫醚 、聚醚醚酮、聚芳香酯及聚碳酸酯所成群之絕緣性耐熱性 樹脂薄膜。 -31 -
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Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6700185B1 (en) * 1999-11-10 2004-03-02 Hitachi Chemical Co., Ltd. Adhesive film for semiconductor, lead frame and semiconductor device using the same, and method for manufacturing semiconductor device
US6733880B2 (en) * 2000-01-19 2004-05-11 Hitachi Chemical Co., Ltd. Adhesive film for semiconductor, lead frame with adhesive film for semiconductor and semiconductor device using the same
JP2003082301A (ja) * 2001-09-10 2003-03-19 Japan Gore Tex Inc 接着テープ及び半導体装置
TWI304835B (en) * 2003-06-10 2009-01-01 Hitachi Chemical Co Ltd Film adhesive and manufacturing method thereof,adhesive sheet and semiconductor device
TWI294904B (en) 2004-05-11 2008-03-21 Hitachi Chemical Co Ltd Adhesive film, lead frame with adhesive film, and semiconductor device using same
CN1325595C (zh) * 2004-05-11 2007-07-11 日立化成工业株式会社 粘合薄膜、带粘合薄膜的引线框架及使用它们的半导体器件
JPWO2005114730A1 (ja) * 2004-05-20 2008-03-27 スパンション エルエルシー 半導体装置の製造方法および半導体装置
US7640807B2 (en) * 2004-07-21 2010-01-05 Hokuriku Electric Industry Co., Ltd. Semiconductor Sensor
DE102006047739A1 (de) * 2006-10-06 2008-04-17 Tesa Ag Hitzeaktivierbares Klebeband insbesondere für die Verklebung von elektronischen Bauteilen und Leiterbahnen
KR100860098B1 (ko) * 2008-02-29 2008-09-26 주식회사 이녹스 반도체 패키지용 접착 필름
KR100963675B1 (ko) * 2008-03-14 2010-06-15 제일모직주식회사 반도체 패키징용 복합기능 테이프 및 이를 이용한 반도체소자의 제조방법
US8318834B2 (en) * 2008-05-22 2012-11-27 Dow Global Technologies Llc Epoxy resin reactive diluent compositions
US8034453B2 (en) * 2008-10-07 2011-10-11 Hexcel Corporation Composite materials with improved burn properties
KR101521260B1 (ko) * 2008-11-25 2015-05-18 삼성전자주식회사 발광 다이오드 패키지 및 이의 제조방법
US8043459B2 (en) * 2009-02-24 2011-10-25 GM Global Technology Operations LLC Reversible dry adhesives for wet and dry conditions
US8916969B2 (en) 2011-07-29 2014-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, packaging methods and structures
JP5900602B2 (ja) * 2012-02-24 2016-04-06 日立化成株式会社 半導体用接着剤、フラックス剤、半導体装置の製造方法及び半導体装置
KR101690626B1 (ko) 2012-02-24 2016-12-28 히타치가세이가부시끼가이샤 반도체 장치 및 그 제조 방법
KR101735983B1 (ko) * 2013-03-07 2017-05-15 스미또모 베이크라이트 가부시키가이샤 접착 필름, 다이싱 시트 일체형 접착 필름, 백그라인드 테이프 일체형 접착 필름, 백그라인드 테이프 겸 다이싱 시트 일체형 접착 필름, 적층체, 적층체의 경화물, 및 반도체 장치, 그리고 반도체 장치의 제조 방법
US20160160090A1 (en) * 2014-12-04 2016-06-09 Tyco Electronics Corporation Adhesive Arrangement
MY186938A (en) * 2015-11-04 2021-08-26 Lintec Corp Curable resin film and first protective film forming sheet
CN106632154B (zh) * 2016-09-23 2019-01-25 厦门双瑞船舶涂料有限公司 一种二聚酸改性环氧树脂及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58198526A (ja) * 1982-05-17 1983-11-18 Mitsubishi Gas Chem Co Inc 耐熱性エポキシ樹脂組成物
JPH01313519A (ja) * 1988-06-10 1989-12-19 Mitsui Petrochem Ind Ltd エポキシ樹脂組成物およびエポキシ樹脂成型材料およびエポキシ樹脂成型体
EP1793421A3 (en) * 1996-10-08 2007-08-01 Hitachi Chemical Co., Ltd. Semiconductor device, substrate for mounting a semiconductor chip, process for their production, adhesive, and double-sided adhesive film
SG72752A1 (en) 1996-10-31 2000-05-23 Hitachi Chemical Co Ltd Heat resistant resin composition and adhesive sheet using the same
JPH10245473A (ja) * 1997-03-03 1998-09-14 Yuka Shell Epoxy Kk エポキシ樹脂組成物
JP3536641B2 (ja) * 1998-01-30 2004-06-14 日立化成工業株式会社 接着フィルム、その製造法、接着フィルム付き支持部材及び半導体装置
JP3661397B2 (ja) * 1998-03-09 2005-06-15 日立化成工業株式会社 マルチワイヤ配線板用接着剤及びこの接着剤を用いたマルチワイヤ配線板とその製造法
US6733880B2 (en) * 2000-01-19 2004-05-11 Hitachi Chemical Co., Ltd. Adhesive film for semiconductor, lead frame with adhesive film for semiconductor and semiconductor device using the same

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