JP4839670B2 - 接着フィルム、接着シート及び半導体装置 - Google Patents
接着フィルム、接着シート及び半導体装置 Download PDFInfo
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- JP4839670B2 JP4839670B2 JP2005132612A JP2005132612A JP4839670B2 JP 4839670 B2 JP4839670 B2 JP 4839670B2 JP 2005132612 A JP2005132612 A JP 2005132612A JP 2005132612 A JP2005132612 A JP 2005132612A JP 4839670 B2 JP4839670 B2 JP 4839670B2
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- FZZQNEVOYIYFPF-UHFFFAOYSA-N Oc1cc2cccc(O)c2cc1 Chemical compound Oc1cc2cccc(O)c2cc1 FZZQNEVOYIYFPF-UHFFFAOYSA-N 0.000 description 2
- KJCVRFUGPWSIIH-UHFFFAOYSA-N Oc1cccc2c1cccc2 Chemical compound Oc1cccc2c1cccc2 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N c1ccccc1 Chemical compound c1ccccc1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 2
- GUFMBISUSZUUCB-UHFFFAOYSA-N CC(C)(C)c1cc(C(C)(C)C)cc(C(C)(C)C)c1 Chemical compound CC(C)(C)c1cc(C(C)(C)C)cc(C(C)(C)C)c1 GUFMBISUSZUUCB-UHFFFAOYSA-N 0.000 description 1
- OOWNNCMFKFBNOF-UHFFFAOYSA-N CC(C)(C)c1ccc(C(C)(C)C)cc1 Chemical compound CC(C)(C)c1ccc(C(C)(C)C)cc1 OOWNNCMFKFBNOF-UHFFFAOYSA-N 0.000 description 1
- IPIUKLUIQYOCMH-UHFFFAOYSA-N CNC(c(cc1)ccc1Oc(cc1C(O2)=O)ccc1C2=O)(c(cc1)ccc1Oc(cc1C(O2)=O)ccc1C2=O)NC Chemical compound CNC(c(cc1)ccc1Oc(cc1C(O2)=O)ccc1C2=O)(c(cc1)ccc1Oc(cc1C(O2)=O)ccc1C2=O)NC IPIUKLUIQYOCMH-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Die Bonding (AREA)
Description
マイクロエレクトロニックマニュファクチャリング アンド テスティング(MICRO ELECTRONIC MANUFACTURING AND TESTING)、1985年、10月号
0.01≦k/(k+m)<1 ・・・(1)
0.01≦k/(k+m)≦0.4 ・・・(2)
0.05≦k/(k+m)≦0.15 ・・・(3)
(合成例1)
温度計、攪拌機及び塩化カルシウム管を装着した500mlの四つ口フラスコに、式(II)で表される化合物であるN−メチルプロパンジアミン(0.002モル)、1,12−ジアミノドデカン(0.049モル)及び1,1,3,3−テトラメチル−1,3−ビス(3−アミノプロピル)ジシロキサン(0.049モル)からなるジアミンと、反応溶媒としてのN−メチル−2−ピロリドン150gとを投入し、60℃で攪拌してジアミンを溶解させた。ジアミンの溶解後、テトラカルボン酸二無水物である4,4’−(4,4’−イソプロピリデンジフェノキシ)ビス(フタル酸二無水物)(0.10モル)を少量ずつ添加した。60℃で1時間反応させた後、N2ガスを吹き込みながら170℃で加熱し、水を反応溶媒の一部とともに共沸除去して、ポリアミドイミド樹脂A1の溶液を得た。
ジアミンを、N−メチルプロパンジアミン(0.01モル)、1,12−ジアミノドデカン(0.045モル)及び1,1,3,3−テトラメチル−1,3−ビス(3−アミノプロピル)ジシロキサン(0.045モル)からなるものとした他は合成例1と同様にして、ポリアミドイミド樹脂A2の溶液を得た。
ジアミンを、N−メチルプロパンジアミン(0.02モル)、1,12−ジアミノドデカン(0.04モル)及び1,1,3,3−テトラメチル−1,3−ビス(3−アミノプロピル)ジシロキサン(0.04モル)からなるものとした他は合成例1と同様にして、ポリアミドイミド樹脂A3の溶液を得た。
ジアミンを、1,12−ジアミノドデカン(0.5モル)、1,1,3,3−テトラメチル−1,3−ビス(3−アミノプロピル)ジシロキサン(0.5モル)からなるものとした他は合成例1と同等にして、ポリアミドイミド樹脂A4の溶液を得た。
ジアミンを、N−メチルプロパンジアミン(0.1モル)からなるものとした他は合成例1と同様にして、ポリアミドイミド樹脂A5の溶液を得た。
合成例1で得たポリアミドイミド樹脂A1の溶液に、クレゾールノボラック型エポキシ樹脂(「YDCN−702」(商品名)、東都化成製)12質量部、4,4’−(1−(4−(1−(4−ヒドロキシフェニル)−1−メチルエチル)フェニル)エチリデン)ビスフェノール(「Tris−P−PA」(商品名)、本州化学製)6質量部、テトラフェニルホスホニウムテトラフェニルボラート(「TPPK」(商品名)、東京化成製)1質量部、窒化硼素フィラー(「HP−P1」(商品名)、水島合金鉄製)25質量部を加え、良く混錬してワニスを調製した。なお、上記の各成分の量(質量部)は、ポリアミドイミド樹脂の溶液中に含まれるポリアミドイミド樹脂の固形分の量を100質量部としたときの量である。
ポリアミドイミド樹脂A1の溶液に代えて、実施例2はポリアミドイミド樹脂A2、実施例3はポリアミドイミド樹脂A3、比較例1はポリアミドイミド樹脂A4、比較例2はポリアミドイミド樹脂A5のそれぞれの溶液を用いた他は、実施例1と同様にして、接着フィルムを得た。
実施例1〜3及び比較例1〜2で得られた接着フィルムについて、プッシュプルゲージを改良した図5に示す測定装置を用いて、以下のようにしてチップ引き剥がし強さを測定することにより、高温でのピール接着力を評価した。
Claims (12)
- 下記一般式(I)で表される部分構造を有するポリアミドイミド樹脂を含有する接着フィルムであって、
前記ポリアミドイミド樹脂が、下記一般式(II)で表される化合物を含むジアミンと、テトラカルボン酸二無水物と、を反応させて得られるものであり、
前記ジアミンが、一般式(II)で表される前記化合物を前記ジアミン全体量を基準として1モル%〜40モル%含む、接着フィルム。 - k及びmが下記式(1)を満たす、請求項1記載の接着フィルム。
0.01≦k/(k+m)<1 ・・・(1) - 前記テトラカルボン酸二無水物が、化学式(III)で表される前記化合物を前記テトラカルボン酸二無水物全体量を基準として40モル%以上含む、請求項3記載の接着フィルム。
- 熱硬化性樹脂を含有する、請求項1〜4の何れか一項に記載の接着フィルム。
- 前記熱硬化性樹脂がエポキシ樹脂を含む、請求項5記載の接着フィルム。
- 前記ポリアミドイミド樹脂100質量部に対して、前記熱硬化性樹脂を1〜200質量部含有する、請求項5又は6記載の接着フィルム。
- フィラーを含有する、請求項1〜7の何れか一項に記載の接着フィルム。
- 前記フィラーは、平均粒径が10μm以下であり、最大粒子径が25μm以下である、請求項8記載の接着フィルム。
- 前記ポリアミドイミド樹脂100質量部に対して、前記フィラーを1〜8000質量部含有する、請求項8又は9記載の接着フィルム。
- 基材フィルムの片面に粘着剤層が設けられたダイシングシートと、前記粘着剤層上に設けられた請求項1〜10の何れか一項に記載の接着フィルムと、を備える接着シート。
- 支持部材に少なくとも1つの半導体素子が搭載された半導体装置において、
前記支持部材及び前記半導体素子を接着しているダイボンディング層、並びに2つの前記半導体素子同士を接着しているダイボンディング層のうち少なくとも一方が、請求項1〜10の何れか一項に記載の接着フィルムにより形成されたダイボンディング層である、半導体装置。
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US20100295190A1 (en) * | 2007-06-06 | 2010-11-25 | Kazuyuki Mitsukura | Photosensitive adhesive composition, film-like adhesive, adhesive sheet, method for forming adhesive pattern, semiconductor wafer with adhesive layer, semiconductor device and method for manufacturing semiconductor device |
JP6907842B2 (ja) * | 2017-09-11 | 2021-07-21 | 昭和電工マテリアルズ株式会社 | コンパウンド、硬化物、及びボンド磁石 |
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JPS5182393A (ja) * | 1974-12-30 | 1976-07-19 | Furukawa Electric Co Ltd | Shinkinaamidoimidojushinoseizoho |
US4652398A (en) * | 1985-09-12 | 1987-03-24 | Stauffer Chemical Company | Rapid curing, thermally stable adhesive composition comprising epoxy resin, polyimide, reactive solvent, and crosslinker |
JPH0229690B2 (ja) * | 1988-12-15 | 1990-07-02 | Japan Synthetic Rubber Co Ltd | Horiamidosankagobutsu |
JP2866779B2 (ja) * | 1993-01-05 | 1999-03-08 | 三井化学株式会社 | 耐熱性接着シート |
JPH08311415A (ja) * | 1995-05-23 | 1996-11-26 | Nitto Denko Corp | 転写用シート |
JP2000273409A (ja) * | 1999-03-19 | 2000-10-03 | Toray Ind Inc | 半導体装置用接着剤シートおよびそれを用いた部品ならびに半導体装置 |
JP4120156B2 (ja) * | 2000-11-20 | 2008-07-16 | 日立化成工業株式会社 | ダイボンディング材及び半導体装置 |
JP2005068347A (ja) * | 2003-08-27 | 2005-03-17 | Mitsui Chemicals Inc | ポリイミド組成物およびその製造方法と用途 |
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