TWI284373B - Semiconductor device and method of manufacturing semiconductor device - Google Patents

Semiconductor device and method of manufacturing semiconductor device Download PDF

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Publication number
TWI284373B
TWI284373B TW092102197A TW92102197A TWI284373B TW I284373 B TWI284373 B TW I284373B TW 092102197 A TW092102197 A TW 092102197A TW 92102197 A TW92102197 A TW 92102197A TW I284373 B TWI284373 B TW I284373B
Authority
TW
Taiwan
Prior art keywords
layer
semiconductor substrate
semiconductor device
amorphous
gate electrode
Prior art date
Application number
TW092102197A
Other languages
English (en)
Chinese (zh)
Other versions
TW200405471A (en
Inventor
Kiyotaka Miyano
Kazuya Ohuchi
Ichiro Mizushima
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of TW200405471A publication Critical patent/TW200405471A/zh
Application granted granted Critical
Publication of TWI284373B publication Critical patent/TWI284373B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0275—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
TW092102197A 2002-01-31 2003-01-30 Semiconductor device and method of manufacturing semiconductor device TWI284373B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002023548A JP3657915B2 (ja) 2002-01-31 2002-01-31 半導体装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200405471A TW200405471A (en) 2004-04-01
TWI284373B true TWI284373B (en) 2007-07-21

Family

ID=27606400

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092102197A TWI284373B (en) 2002-01-31 2003-01-30 Semiconductor device and method of manufacturing semiconductor device

Country Status (4)

Country Link
US (2) US6891232B2 (enExample)
JP (1) JP3657915B2 (enExample)
CN (2) CN1327498C (enExample)
TW (1) TWI284373B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100540341B1 (ko) * 2003-12-31 2006-01-11 동부아남반도체 주식회사 반도체 소자 제조방법
US7102201B2 (en) * 2004-07-15 2006-09-05 International Business Machines Corporation Strained semiconductor device structures
JP2006295025A (ja) * 2005-04-14 2006-10-26 Sharp Corp 半導体装置およびその製造方法
JP2007299991A (ja) * 2006-05-01 2007-11-15 Toshiba Corp 半導体装置及びその製造方法
US7874011B2 (en) * 2006-12-01 2011-01-18 International Business Machines Corporation Authenticating user identity when resetting passwords
US7482270B2 (en) * 2006-12-05 2009-01-27 International Business Machines Corporation Fully and uniformly silicided gate structure and method for forming same
KR100844933B1 (ko) * 2007-06-26 2008-07-09 주식회사 하이닉스반도체 반도체 소자의 트랜지스터 및 그 제조 방법
US20090004851A1 (en) * 2007-06-29 2009-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Salicidation process using electroless plating to deposit metal and introduce dopant impurities
US7772074B2 (en) * 2007-10-18 2010-08-10 Applied Materials, Inc. Method of forming conformal silicon layer for recessed source-drain
KR20090065570A (ko) * 2007-12-18 2009-06-23 삼성전자주식회사 반도체 소자의 및 이의 제조방법
US20100044804A1 (en) * 2008-08-25 2010-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Novel high-k metal gate structure and method of making
WO2021209284A1 (en) 2020-04-15 2021-10-21 Basf Se A laminate comprising aqueous polyurethane dispersion and 2-component polyurethane and the use thereof
KR102874702B1 (ko) * 2021-02-25 2025-10-21 주식회사 디비하이텍 알에프 스위치 소자 및 제조방법

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5470794A (en) * 1994-02-23 1995-11-28 Advanced Micro Devices Method for forming a silicide using ion beam mixing
JPH098297A (ja) 1995-06-26 1997-01-10 Mitsubishi Electric Corp 半導体装置、その製造方法及び電界効果トランジスタ
EP0793271A3 (en) * 1996-02-22 1998-12-02 Matsushita Electric Industrial Co., Ltd. Semiconductor device having a metal silicide film and method of fabricating the same
US5824586A (en) * 1996-10-23 1998-10-20 Advanced Micro Devices, Inc. Method of manufacturing a raised source/drain MOSFET
CN1125482C (zh) * 1997-10-15 2003-10-22 世界先进积体电路股份有限公司 具有p+多晶硅栅极的金属氧化物半导体晶体管的制作方法
US6071782A (en) * 1998-02-13 2000-06-06 Sharp Laboratories Of America, Inc. Partial silicidation method to form shallow source/drain junctions
US6232641B1 (en) * 1998-05-29 2001-05-15 Kabushiki Kaisha Toshiba Semiconductor apparatus having elevated source and drain structure and manufacturing method therefor
US6559036B1 (en) * 1998-08-07 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6395624B1 (en) * 1999-02-22 2002-05-28 International Business Machines Corporation Method for forming implants in semiconductor fabrication
US6207995B1 (en) * 1999-02-23 2001-03-27 Advanced Micro Devices, Inc. High K integration of gate dielectric with integrated spacer formation for high speed CMOS
US6174791B1 (en) * 1999-03-25 2001-01-16 United Microelectronics Corp. Method for a pre-amorphization
JP3886085B2 (ja) * 1999-05-14 2007-02-28 株式会社東芝 半導体エピタキシャル基板の製造方法
US6346732B1 (en) * 1999-05-14 2002-02-12 Kabushiki Kaisha Toshiba Semiconductor device with oxide mediated epitaxial layer
US6333217B1 (en) * 1999-05-14 2001-12-25 Matsushita Electric Industrial Co., Ltd. Method of forming MOSFET with channel, extension and pocket implants
JP4010724B2 (ja) * 1999-12-28 2007-11-21 株式会社東芝 半導体装置の製造方法
US6475868B1 (en) * 1999-08-18 2002-11-05 Advanced Micro Devices, Inc. Oxygen implantation for reduction of junction capacitance in MOS transistors
JP2002124665A (ja) * 2000-10-12 2002-04-26 Mitsubishi Electric Corp 半導体装置およびその製造方法
US20020192914A1 (en) * 2001-06-15 2002-12-19 Kizilyalli Isik C. CMOS device fabrication utilizing selective laser anneal to form raised source/drain areas

Also Published As

Publication number Publication date
CN1638065A (zh) 2005-07-13
US6891232B2 (en) 2005-05-10
JP3657915B2 (ja) 2005-06-08
US20030141549A1 (en) 2003-07-31
US20050035413A1 (en) 2005-02-17
TW200405471A (en) 2004-04-01
CN1327498C (zh) 2007-07-18
CN1435896A (zh) 2003-08-13
JP2003224261A (ja) 2003-08-08
CN1237620C (zh) 2006-01-18

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MM4A Annulment or lapse of patent due to non-payment of fees