TWI281196B - Transistor and formation method thereof - Google Patents
Transistor and formation method thereof Download PDFInfo
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- TWI281196B TWI281196B TW094127304A TW94127304A TWI281196B TW I281196 B TWI281196 B TW I281196B TW 094127304 A TW094127304 A TW 094127304A TW 94127304 A TW94127304 A TW 94127304A TW I281196 B TWI281196 B TW I281196B
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- 238000000034 method Methods 0.000 title claims description 23
- 230000015572 biosynthetic process Effects 0.000 title description 5
- 238000002955 isolation Methods 0.000 claims abstract description 34
- 150000002500 ions Chemical class 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 206010011224 Cough Diseases 0.000 claims 1
- 229910052772 Samarium Inorganic materials 0.000 claims 1
- 230000007774 longterm Effects 0.000 claims 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- -1 helium ions Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 244000025254 Cannabis sativa Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- 241000282320 Panthera leo Species 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 201000001883 cholelithiasis Diseases 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
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- H01L29/0642—Isolation within the component, i.e. internal isolation
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
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Description
1281196 : 九、發明說明: 【發明所屬之技術領域】 本發明係有關於半導體裝置,特別係關於橫向雙重擴散的金氧半 (laterally doiible-diffUsed metal oxide SemiC〇nductor ; LDM〇s)電晶體。 【先前技術】 第1圖為一剖面圖,係顯示習知的LDM0S電晶體2〇qLDM〇s元件 常用於高壓的電晶體,應用在功率MOS的領域。LDM〇s元件通常與低壓 的電晶體形成於同一基底。 N〜& •在第1圖的LDMOS電晶體20中,-p型井層22係形成於一基底24 上。一隔離區26,包含隔離場氧化物28,定義出LDM〇s電晶體2〇的一 主動區30。井層22具有一高壓的N型井區32與一低壓的p型井區幻。_ 井區場氧化物34係形成於(例如以熱氧化成長的方法)N型井區32上。習知 的井區場氧化物34通常以相同的製程與隔離場氧化物28形成於同一水平 上。- β没極區36係形成於N型井區32中,並位於井區場氧化物%與 隔離場氧化物28之間。-矿源極區38係形成於ρ型井區33中,並位於一 閘介電層40與隔離場氧化物28之間。一 ρ+源極區42亦形成於ρ型井區 • 33中,並位於矿源極區38與隔離場氧化物28之間。 井區場氧化物34的功能之一,在於降低LDM〇s電晶體2〇的敎載子 效應(hot carrier effect)、與提升其打開時的崩潰電壓。在n+汲健%與閑 極44之間施加較高的電場,會在N+没極區%與閘極44之間形成熱載子, 上述熱載子會穿過閘介電層4G與井區場氧化物上述熱載子效應會降低 可靠度、降低閘極氧化層的完整性(gate 〇涵此嗯办;G〇i)、並在高電壓 時呈現非理想的電流-電壓曲線。例如,第i圖之LDM〇s電晶體2〇的電流 .—電壓錄係繪示於第2圖中,其縱座標為第1圖之LDM0S電晶體2〇驗 .極-源極間電流仏)。第2圖的區域46係顯示在較高的祕源、極間電壓㈤
0503-A31543TWF 5 1281196 睡 守(Γ7於6GV)王現非理想的電流m線。在上述的情況下,以習 去100V的LDMOS技術為例,在較高的汲秦源極間電壓㈤時,低電麼 的閘極-源極間電壓(Vgs)曲線會呈現異常。 【發明内容】 有鑑於此,本發_主要目的係提供—種電日日日體及其形成方法,可在 較_及極-源極間戰V满(例如高於60V),呈現更理想的電流曲 線,而提供更具可靠度的性能。 為達成本發明之上述目的,本發明係提供一種電晶體,包含··一間極; 弟-摻雜井區於-井層中;一凹部於上述第一摻雜井區中;第一絕緣區於 上述井層的上表面;第二絕緣區,其至少—部分於上述凹部中,而使至少 I部分的上述第二絕緣區低於上述第—絕緣區;以及—汲極區於上述凹部 極區ΐΐ述第二絕輸目鄰,而使上述第二輯區位於上述職與上述沒 一本發明係又提供一種電晶體,包含:一井層於一基底上,上述井声呈 第—絕緣區於上述井層中’而於上述井層定義第-主動區:、 - 上迷井層的上述第一主動區中,上述第一摻雜井區的至少 邛刀相郴於上述電晶體的一閘極·一 絕緣區於上料外上μ,^丨Α掀上相—摻雜井區中;第二 上忒井層的上表面,亚至少部分於上述第 f、,其至少—部份於上述凹部中,而使至少-部分的上述“= 、上述第_域區;以及—祕區於上述凹部巾,盥上 _ 而使上述第三絕緣區位於上述閘極與上述汲極_。弟二〜區相鄰’ 本發明係又提供-種電晶體_成方法,包含··形成第 一井層的第—主動區中;形成犧牲場氧化物於上述第_摻雜并^井 述犧牲場氧化物,以形成—凹部於上述第—摻雜井區中·^二移除上
0503-A31543TWF 6 1281196 没極區於上述凹部φ,# 一#八ή6 、 W 述第一摻雜井區中,與形成於上述凹部中的 而使1述:水久場氧化物相鄰;以及形成―_於上述第—主動區上, 上述^,的至少—部分與上述凹部相鄰,財形成於上述凹部的部分 述水久賴化物係位於上述閑極與上述祕區之間。 料又提供—種電晶體的形成方法,包含:以複數個第一離子, 二捧雜并fT、井區於—井層的第—主動區中;形成犧牲場氧化物於上述第 中,移除上述犧牲場氧化物,以形成一凹部於上述第一摻雜井區 分的I、f部的深度至少5GGA;形成—永久場氧化物,其中至少一部 广植物係形成於上述凹部中;形成—汲極區於上述凹部 雜絲巾,卿成於上伽”的—部分社述永久 _鳩—纏1,崎地m的至 係位於上述難與上敍麵之間。 上h场乳化物 本發㈣又提供-種電晶體的形成方法,包含:以複數個第一離子, =:=#雜層於一基底;驅動上述埋藏摻雜層的離子,使其進入上述 ^妒成:述基底,並於上述埋藏推雜層上;以複數個第二離 I =成_隔離區於上述井層中,以劃分並定義第—主動區於上述井層中, =弟^動區並錄上述埋藏摻雜層的上方;形成第化的罩幕層 主初絲區上,上述第—_化的罩幕層财第—開口於上述第一 =的弟-區上’·以複數個第三離子,形成第一摻雜井區於上述第一主 4上犧牲魏化物於上述第—絲區的上述第一 犧牲魏化物並位於上述第—摻料紅;移除上述第—圖形化 的罩幕層;《第二圖形化的罩幕層赴述井層上,上述第二圖 U具有第二開口於上述第—主祕的第二區上;以複數個苐四離子,步 :第摻雜井區於上述第一主動區的上述第二區,上述第二區 述 弟-區;移除上述第二圖形化的罩幕層;移除上述犧牲場氧咖
0503-A31543TWF 7 1281196 -凹部於上述第-摻雜井區的上述第1中,巧上 500A;形成—永久場氧化物,其中至少—立八/、、述凹邛的深度至少 於上述凹部中n祕區於上述二:分的上述永久場氧化物係形成 與形成於上述凹部中的-部分的上上㈣—摻雜井區中, 於上述第二娜上,而使上述二二==成:閉極 中形成於上述凹部的部分上述永久場氧 、〔凹W相鄰,其 之問。 “魏物餘於與上述汲極區 【實施方式】 綱 本發明之上述和其他目的、特徵、和優點能更日_懂,下文 特紐個較佳實關,魏合所_示,作詳細說明如下: ^ 3^6圖為-系列之圖’係顯示本發明較佳實施例
==^考第Η圖,在本發明的第一實施例中,-高壓-MOS I;! 54 52 ^ 〇 形^的元件其他’ %例中’本發明較佳實施例之電晶體亦可以相鄰於其他 月多考第3圖提供-基底52。在第_實施例中,基底Μ為碎。基底 52亦可以為各種適當的材料’例如(包含但不限於):絕緣層上覆石夕 ㈣c_-in油㈣結構、石夕、石夕錯、上述所構成的複合材料、具不同結晶 取向的上述材料、與上述之組合。在第—實施例巾,德底52例如為p型 攙=基底’具有<觸>的結晶取向。請參考第*圖,可在基底Μ植入複 數個第-離子%,卿彡成—域摻歸%。本步賴使狀_化的罩幕 $綠示於第4圖。在第-實施例中,埋藏摻雜層58例如為N型。在植入 離子56之後較好為施以一井區驅入dr;jve⑹的步驟(例如加熱驅 入)。在其他的貫施例中(未繪示),可以省略埋藏摻雜層%的形成,或是以 填入緣材料的溝槽來取代。
0503-A31543TWF 1281196 請參考第5圖井層6〇係形成於基底52上。第—實施例之井層的 為-P型換雜的石緣晶層,在其他實施例中,井層6Q的材料及摻雜型式亦 可以有所不同。在第6圖中,-圖形化的隔離區罩幕62係形成於井層⑺ 上,其具有開口 64。在第一實施例中,圖形化的隔離區罩幕為光阻曰 其他實施例中,Μ化的隔離區罩幕62可林種適用於形成罩幕的材料。 接下來,經由圖形化的隔離區罩幕62的開口 Μ,在井層6〇植入複數 二離子68 ’而形成-隔離區66。隔離區66係劃分並定義第一主動區兀於 井層60中。在第-實施例中,係例如將隔離區66摻雜為ν型:_ 離區66之後,移除圖形化的隔離區罩幕62。 夕阳 在第7圖中,第一圖形化罩幕72係形成於井層6〇上,立呈 口 74於第-主動區7〇的第―區76上。第—實施例之第—圖形化罩幕^ 具有兩層·-墊氧化層7δ與一氮切層_如為秘4)。例如,可使 影、侧的製程來形成第一圖形化罩幕72。可在第一主動區% 76植入複數個第三離子84,而形成第_摻雜井區8 : -摻雜井區82例如為高電_N型井。 料_例中’第 接下來,經由第-開π 74,在第_摻雜井區82形成 86。較好為以熱氧化成長的方式生成犧牲場氧化物%,而 ^化物 在麵賴牲魏錄86之後,_幕中 大厗度較好至少為例如_Α。在.f 而其取 弟一推_82中的第三離子㈣細-驅人的步驟Γ )’可對 “ΐ考=仰—娜7G的第4 成弟—摻雜井區88。在植入第四離子92之前,先m κ 94,其具有—開口 %位於第二區9{)。第 f成弟二圖形化罩幕 於形成罩幕的材料 ^幕94可以是任钶適用 姐在為4電晶體5〇形成第二推雜井區挞
0503-A31543TWF 1281196 時’亦可以使用相同的摻雜制 因此,較好為可在某些並享^= S 60中形成第—低電壓摻雜區98。 體M。在第-實珊十彳 =^蝴冑物伽與健電晶 第四離子92後(例如形成其他嶋雜井區之前=井。在植入 的第四離子92再施以—驅入的步驟。 #弟一4雜井區88中 在第κ)圖中,移除第二圖ς化 第—實施例中,藉由植入複數個第五離子斯,=/= ι=、-。在 1〇〇,其例如為低電壓的Ρ型并。 奋 y成弟一低電壓摻雜區 第六離子1〇6,而形成第:低見轭例令,亦可以藉由植入複數個 v砜乐—低電壓摻雜區1〇2, 為了簡化圖式,並未緣示第1〇円所一物一例如為低電_N型井。 在第η _ ^ 騎铜的草幕。 ρ 财使用任何適當的钱刻技術來移除犧牲門㈣% 在第-摻雜井區82形成一凹部1〇如 喊化祕,而 物86的移除係使用具有選 在弟―貫施例中,犧牲場氧化 中,凹部_深产會_】石夕的濕侧法。在較佳實施例 …屬W冰度110較好至少為5〇〇α _11G可以_約_或更大。例如在第—部⑽ Π0 ,, 3000Λ(,^, 6000Α ,;;^} p弟场乳化物m係形成於井層60上的隔離區 分的場氧化物,即第二場氧化物116係、’』 料及/或相同製__第—場氧化物m |二===用相同材 -方面,亦可以使用錯 4—%德物116。但在另 二門不同製程來形成第—場氧化物114盘第 :♦細中,軸_嫩_程來形成第 矛獅114辦:物_6。賴第12圖所 不的弟一%虱化物114盥第二m躉仆从", 所使用的餘,相狀Γ有不⑽,卜 形狀僅為示意,實際上依據 狀曰有不同的交化。形成於凹部108内的至少-部分
0503-A31543TWF 10 1281196 的弟二場氧化物116,係低於形成於井層66的上表面則第一場氧化物 114。將第_場祕物116形成於凹部⑽的優點則容後再欽述。 —在第13财,係形成高«晶體5_介電層ιΐ8的氧化物 118 ^ 亦可贿I、他的方法來簡蝴m(例如氧化成長或 施以-高壓键入,以使閑介電層118發叫 ^未,示第13 _示步射’絲移除刪54 _介電層所使用的罩 • 在弟14圖中’係形成第一實施例之低壓閘介電層12〇,並施以-低屢 :二入。為了簡化圖式,並树示第14圖所示步驟中 壓 :電層120所使用的罩幕。在第15圖中,__係沉積二:: 118、120上。在第一實施例中,崎料⑵例如為複㈣。在第1圖二 係使用相同的材料。 〜低“曰曰體54的閘極126 ^ 15圖中,伽__步驟來形綱電日日日體料間極124 ,、健電晶體54的閘極126。用來形成閘極124、126的圖形化軍幕 讀第16圖。在第一實施例中用以形成閘極124、126 " •刻,然而在其爾施咖可以使„_ == 性離子侧)。在上祕辭驟之後,係輪第16 _示電晶體5()、 源極與汲極。第16圖所示的場氧化層114、u —的 的形狀可以有不同的變化。 w H貫際上 在第π圖中,以NW的離子植入來形成電晶體5〇 128fN+m !L; 源極區Π2與β源極區134係形成於第—實施例的 · -區既(第一實施例中為N+_成於凹部彻中,並在第一接^ • 116 〇 - f 116
0503-A31543TWF 1281196 極區136之間。 4思第17圖為第—實施例之電晶體 _ H 聰電晶體,本發明咖科 電崎因此’如果是™〇s電晶體時,第巧
^接雜賴n型、喊他元件的導電《均為型的ί反為型N i據:=:=p型)。上^化可為發明所屬技術領域具通常知識者, 根據本毛月所揭路的内容加以輕易完成。 當第二場氧化層116形成於N型的第一接雜井區82上時, 區82的N H讀較好為大於隔純%的濃度; 开f於P型的第-摻雜_2上時,第-摻雜編2的_濃^: 為大於隔離區66的濃度。儘管第一實施例中係使用場氧化物(例如以區域氧 ^ localized oxidation isolation method ; LOCOS) ^ 其他實施财,亦可贿式的隔離結構(例城溝槽_、輯材 料的沉積)’部份或完全取代場氧化物。例如,井層6〇中的隔離區邰亦可 以是填入絕緣材料(未繪示)的淺或深溝槽結構。 例如,在汲極區⑽與閘極m間施加高電場時,本發明的實施例可 減少作為神元件的高壓LDM〇S電晶體5Q的熱載子效應。與習知的電晶 體2〇(請參考第1圖)比較,本發明的實施例將汲極區1S6與閘極的距 離拉開,並改變源極區134與汲極區136之間電子流的主要路徑。與習知 的電晶體20(請參考第1圖)比較,本發明電晶體的結構會釋放(或改變)表面 電場,而減少熱載子效應,並提升打開時的崩潰電壓。 因此,第17圖所示第一實施例之電晶體50,與習知的電晶體2〇(請參 考第1圖)比較,其優點在於藉由減少熱载子效應,並提升打開時的崩潰電 壓’而提升LDMOS電晶體的性能。另外,本發明的實施例亦在汲極區136 與閘極124間施加高電場時,減少或消除汲極區1赞與閘極 12
0503-A31543TWF 1281196 » ~的形成。本發_實劇亦可提料靠度、增加_氧化完纽(娜 oxide integrity ’· GOI)、並在高電壓時得到較理想的電流_電壓曲線。第17 圖所示之電晶_電流·電Μ線鱗示於第1S圖,在較高的汲極_源極間 電壓(Vds)時,呈現更理想的f流·電|曲線。請注意本發明第—實施例係改 善第2圖的區域46,在較高的沒極-源極間電壓(Vds)時(例如高於卿)的情 況(比較第2圖與第18圖)。因此,本發明的實施例可提供一 ldm〇s元件, 其在較南献極-源極間電屋(Vds)時(例如高於6〇v),呈現車交理想的電流-電 壓曲線,並在此狀態下提供更具可靠性的效能。 儿 *雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明,任 何熟習此技#者,在不麟本發明之精神和範_,當可作些許之更動與 潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
0503-A31543TWF 13 Ϊ281196 — 【圖式簡單說明】 第1圖為一流程圖,係顯示習知的高壓LDM〇S電晶體。 第2圖為第1圖所示之電晶體的電流_電壓曲線。 第3 、 、 〜16圖為一系列之剖面圖,係顯示本發明較佳實施例之電晶體的形 成方法之步驟。 =17圖為-剖面圖’係顯示本發明較佳實施例之電晶體之結構示意圖。 弟18圖為第17圖所示之電晶體的電流-電壓曲線。
【主要元件符號說明】 20〜LDMOS電晶體; 24〜基底; 22〜P型井層; 26〜隔離區, 28〜隔離場氧化物; 30〜主動區; 32〜高壓的N型井區; 33〜低壓的P型井區 34〜井區場氧化物; 36〜N+汲極區; 於〜源極區; 40〜閘介電層; 44〜閘極; 46〜區域; 5〇〜高壓LDMOS電晶體; 52〜基底; 54〜低壓LDMOS電晶體; 56〜第一離子; 58〜埋藏摻雜層; 60〜井層; 62〜隔離區罩幕; 64〜開口; 66〜隔離區; 68〜第二離子; 70〜第一主動區; 72〜第一圖形化罩幕 74〜第一開口; 76〜第一區; 78〜墊氧化層; 80〜氮化碎層; 82〜第一摻雜井區; 84〜第三離子; 0503-A31543TWF 14 1281196 86〜犧牲場氧化物 88〜第二摻雜井區; 90〜第二區; 92〜第四離子; 94〜圖形化罩幕; 96〜開口; 98〜第一低電壓摻雜區; 100〜第二低電壓摻雜區; 102〜第三低電壓摻雜區; 104〜第五離子; 106〜第六離子; 108〜凹部; 110〜深度; 112〜上表面; 114〜第一場氧化物; 116〜第二場氧化物; 118〜閘介電層; 120〜低壓閘介電層; 122〜閘極材料; 124〜閘極, 126〜閘極; 128〜N源極區, 13 0〜N >及極區, 132〜P+源極區; 134〜]Si+源極區; 13 6〜>及極區。 0503-A31543TWF 15
Claims (1)
1281196 •7 十、申請專利範圍: 1·一種電晶體,包含: 一閘極; 第一摻雜井區於一井層中; 一凹部於該第一摻雜井區中; 第一絕緣區於該井層的上表面; 第二絕緣區,其至少一部分於該凹部中,而使至少一部分的該第二絕 緣區低於該第一絕緣區;以及 > 一没極區於該凹部中,與該第二絕緣區相鄰,而使該第二絕緣區位於 該閘極與該没極區之間。 2.如申請專利範圍第1項所述之電晶體,其中該第一與第二絕緣區為場 氧化(field oxide)結構。 3·如申請專利範圍第1項所述之電晶體,其中該第一與第二絕緣區為淺 溝槽隔離結構。 4 ·如申請專利範圍第1項所述之電晶體,其中至少一部分的該第二絕緣 區低於該第一絕緣區至少5〇〇人。 5. 如申請專利範圍第1項所述之電晶體,其中至少一部分的該第二絕緣 | 區低於該第一絕緣區至少10⑻人。 6. 如申請專利範圍第1項所述之電晶體,其中該凹部的深度至少5⑻λ。 7·如申請專利範圍第1項所述之電晶體,其中該凹部的深度至少1〇〇〇人。 8·如申請專利範圍第1項所述之電晶體,其中該凹部的深度至少2〇〇〇人。 9·如申請專利範圍第1項所述之電晶體,其中該電晶體為橫向雙重擴散 的金氧半(laterally double-difflised metal oxide semiconductor ; LDM0S)電晶 體。 10·—種電晶體,包含: 一井層於一基底上,該井層具有一上表面; 0503-A31543TWF 16 1281196 第一絕緣區於該井層中,而於該井層定義第一主動區; 第一摻雜井區於該井層的該第一主動區中,該第一摻雜井區的至少一 部分相鄰於該電晶體的一閘極; 一凹部於該第一摻雜井區中; 第二絕緣區於該井層的上表面,並至少部分於該第_絕緣區上方; 第三絕緣區,其至少一部份於該凹部中,而使至少一部分的該第三絕 緣區低於該第二絕緣區;以及 一汲極區於該凹部中,與該第三絕緣區相鄰,而使該第三絕緣區位於 & 該閘極與該没極區之間。 11·如申請專利範圍第10項所述之電晶體,其中至少一部分的該第三絕 緣區低於該第二絕緣區至少5〇〇A。 12.如申請專利範圍第10項所述之電晶體,其中至少一部分的該第三絕 緣區低於該第二絕緣區至少ΙΟΟΟΑ。 13·如申請專利範圍第10項所述之電晶體,其中該凹部的深度至少 500人。 14.如申請專利範圍第10項所述之電晶體,其中該凹部的深度至少 1000人。 I 15.如申請專利範圍第10項所述之電晶體,其中該凹部的深度至少 2000人。 16.如申請專利範圍第10項所述之電晶體,其中該電晶體為橫向雙重擴 散的金氧半(laterally double-diffused metal oxide semiconductor ; LDMOS)電 晶體。 17·如申請專利範圍第i〇項所述之電晶體,更包含一埋藏摻雜層於該井 層的第一主動區下。 18.如申請專利範圍第10項所述之電晶體,其中該第一摻雜井區的一部 分延伸至該閘極下。 0503-A31543TWF 17 1281196 19·~種電晶體的形成方法,包含: 形成第一摻雜井區於一井層的第一主動區中; 形成犧牲場氧化物於該第一摻雜井區; 移除該犧牲場氧化物,以形成一凹部於該第一摻雜井區中; 形成-永久場氧化物,其中至少—部分的該永久場氧化物係形成於該 凹部中; 形成一汲極區於該凹部中,並在該第一摻雜井區中,與形成於該凹部 中的一部分的該永久場氧化物相鄰 ;以及 % 、,死^成一閘極於該第一主動區上,而使該閘極的至少一部分與該凹部相 鄰其中形成於該凹部的部分該永久場氧化物係位於該閘極與該汲極區之 間。 20.如申請專利範圍第19項所述之電晶體的形成方法,更包含於該井層 形成一隔離區,以定義該第一主動區。 曰 21·如申請專利範圍帛20項所述之電晶體的形成方法,其中形成該隔離 區更包含於該井層植入離子。 22·如申请專利範圍第19項所述之電晶體的形成方法,更包含形成第二 _ 摻^井區於該第-主動區,並與該第—摻雜輕相鄰,其中至少一部分的 5亥第二摻雜井區位於該閘極之下。 23·如申睛專她圍第19項所述之電晶體的形成方法,更包含: 形成一埋藏摻雜層於一基底中; 驅動該埋藏摻雜層的離子,使其進入該基底;以及 ▲ «耕層㈣基底,並於該喊摻闕上,其巾鮮—主動區係於 該埋藏摻雜層上。 ' 24.如申請專利範圍第19項所述之電晶體的形成方法,更包含: - 。形圖形化的罩幕於該第—主動區上,該第^圖形化的罩幕具有 _ 7 f f和於δ亥第一主動區上,而藉由該開口形成該犧牲場氧化物; 0503-A31543TWF 18 1281196 以及 於形成該犧牲場氧化物之後,移除該第一圖形化的罩幕。 25·如申请專利範圍第24項所述之電晶體的形成方法,其中該第一圖形 化的罩幕更包含: 一墊氧化層;以及 一氮化矽層於該墊氧化層上。 26.如申請專利範圍第19項所述之電晶體的形成方法,其中該犧牲場氧 化物的厚度約6000人。
如申。月專利範圍第19項戶斤述之電晶體的形成方法,其中該電晶體為 «f^^^^daterally double-diffused metal oxide semiconductor ; LDMOS)電晶體。 的形成方法,其中該凹部的深 28·如申請專利範圍第19項所述之電晶體 度至少500Λ。 以複數個第-離子,形成第—摻雜井區於_井層的第—主動區中; 形成犧牲場氧化物於該第一摻雜井區; =韻牲場氧化物,成_凹部於該第_摻 部的深度至少500Α ; r /、肀°系凹 形成一永久場氧化物,其中 . A 凹部中; 中至夕一一分的该水久場氧化物係形成於該 形成一閘極於該第一主動 鄰,其中形成於該凹部的1八;、而彳娜極的至少—部分與該凹部相 間。 的‘•久魏化物餘於該_與槪極區之 30·-種電晶體的形成方法,包含: 0503-A31543TWF 19 1281196 以複數個第—離子,形成—埋藏摻雜祕-基底; 驅動該埋藏摻雜層的離子,使其進入咳美底· 形成-井層於該基底,並於該埋藏換雜=; 個第二離子,形成—隔離區於該井層中,以劃分並定義第一主 動區於耕層中’該第一主動區並位於該埋藏摻雜層的上方; 呈古ϋ成第—_韻轉層_第—主祕上,郷-_化的罩幕層 具有弟一開口於該第一主動區的第_區上; 以複數個第三離子,形成第一接雜井區於該第-主動區的該第-區; 鲁位料ΐ =牲麥氧化物於4第—主動區的該第一區,該犧牲場氧化物並 位於該第一摻雜井區上; 移除該第一圖形化的罩幕層; 形成第二圖形化的罩幕層於該井層上,該第二 二開口於該第-絲區的第二區上; 〕卓奉I、有弟 :第四離子,形成第二摻雜井區於該第一主 该弟一區相鄰於該第一區; 移除該第二圖形化的罩幕層; 雜該犧牲場氧化物,以形成-凹部於該第-摻雜井 ®中,其中該凹部的深度至少5〇〇人; 〇弟& 凹部永久場氧化物,其中至少—部分的該永久場氧化物係形成於該 形成-汲極區於該凹部中,並在該第一接 中的一部分的該永久場氧化物相鄰;以及 _成於该凹部 形成-閘極於該第二摻雜井區上,而使該閑極的至小 =:其中形一的部分該永久場氧化物係位於== . Μ•如懈麵第3〇項所述之罐_成麵,其恤藏推雜 0503-A315431TWF 20 1281196 層為N型、該井層為P型、該隔離區為N型、該第一摻雜井區為N型、與 該第二摻雜井區為P型。
0503-A31543TWF 21
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KR20060050404A (ko) | 2006-05-19 |
US7122876B2 (en) | 2006-10-17 |
CN1734786A (zh) | 2006-02-15 |
US20060286735A1 (en) | 2006-12-21 |
CN100411191C (zh) | 2008-08-13 |
TW200607004A (en) | 2006-02-16 |
US7384836B2 (en) | 2008-06-10 |
US20060033155A1 (en) | 2006-02-16 |
KR100711557B1 (ko) | 2007-04-27 |
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