TWI272747B - Electronic device package and electronic equipment - Google Patents

Electronic device package and electronic equipment Download PDF

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Publication number
TWI272747B
TWI272747B TW094139279A TW94139279A TWI272747B TW I272747 B TWI272747 B TW I272747B TW 094139279 A TW094139279 A TW 094139279A TW 94139279 A TW94139279 A TW 94139279A TW I272747 B TWI272747 B TW I272747B
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Taiwan
Prior art keywords
electronic device
mounting substrate
substrate
mounting
flexible substrate
Prior art date
Application number
TW094139279A
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English (en)
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TW200629662A (en
Inventor
Wataru Ito
Original Assignee
Seiko Epson Corp
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Publication date
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Publication of TW200629662A publication Critical patent/TW200629662A/zh
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Publication of TWI272747B publication Critical patent/TWI272747B/zh

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/189—Printed circuits structurally associated with non-printed electric components characterised by the use of a flexible or folded printed circuit
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985—Flexible insulating substrates
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  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
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1272747 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種安裝基板及電子機器 【先前技術】 近年來’以卡片大小之電子機器等為代表，各種電子機 器趨於薄型化、輕量化。伴隨如此之電子機器之薄型化、 輕量化，逐漸需要安裝於其中之各種電子裝置亦以薄型之 狀態直接安裝。作為電子裝置之一例，以石夕製之ic晶片 (半導體晶片)為例’目前，可於矽晶圓之狀態下削除其内 側，由此形成厚度為50 μηι以下之極薄Ic晶片。 然而’至於將如此之電子裝置與其安裝基板之間電性連 接的連接方法，先前，眾所周知之方法為使用異方性導電 材料⑽WACP)之方法或、採用焊接線（wb)之方法。 但，使用異方性導電材料之方法中，由於此異方性導電材 枓而厚度需要增加約1g〜3g _，由此，安裝有此設備之 電子機$或電子零件之厚度會增厚。& ’採用焊接線之方 中為了 ％繞導線需要！ mm以上之空間，由此，安裝有 此電子裝置之雷+ 電子械裔或電子零件之厚度仍然會增厚。 因此，此等弁前夕士、+ 1 先則之方法中，並未完全實現電子機器或成 ”，、/、零件之電子零件的薄型化以及，進而伴隨其之輕量 4 匕0 又’此笼'Οι. 寺方法中，尤其於使用上述極薄1(：晶片之情形 時，由於接合日丰 夺之起聲波或壓力，亦會造成極薄1C晶片 虽/電子裝置）破損或連接可靠性降低。 土於如此背景，日本專利特開2001-230001號公報中， 105731.doc 1272747 揭示=用具有彈性之導電構件進行端子間之電性連接， 由此長：南連接構造之可靠性的安裝方法。 然而’上㈣前技術文獻中揭示之安裝方法中，亦存在 因安裝基板彎曲耐性不夠而反覆使用之可靠性低下的問 題0 右將1C晶片薄層化至厚慶的 “ 子度、力50 因加工上之微小缺 陷A致丰導體晶片破損，故而於希望晶片本身薄型化之 同時，尤其希望晶片附近彎曲耐性之提高。 【發明内容】 本發明«於上述情形而開發完成者’旨在提供一種安 裝基板’其係安裝有裝載於電子機器或電子烫件上之電子 裝置者，於實現薄型化之同時，因具有可挽性特性而彎曲 時之财性亦良好。 本發明為解決上述問題，提供有—種安裝基板，其係將 具有包含連接端子之端子形成面之電子裝置安裝於可撓性 基板上而形成者’上述連接端子直接或介以導電構件而與 於上述可撓性基板上形成之布線性連接，且上述端 子形成面配置為與該安裝基板之厚度方向上之中立面大致 一致。 此安裝基板將可撓性基板用作基板，故而具有可挽性， 並可比較自由地進行彎曲。並且，以上述電子裝置之端子 形成面與安裝基板之中立面大致一致之方式安裝電子裝 置’故而彎曲安裝基板時所產生之變形現象，於配置於中、 立面上之電子裝置之端子形成面中幾乎為零。因此，彎曲 105731.doc 1272747 應力不會作用於電子裝置之逯 接為子與安裝基板上之布線 圖案的電性連接部分。藉此，可 性優良之安裝基板。 $而、性優良、可靠 本發明之安裝基板中，較好的是於該安裝基板之厚度方 向上，夾住上述電子裝置之端子形成面且分別配置於兩側 之構造構件具有大致相等之彎曲彈性率。上述中立面之位 置位於安裝基板之厚度方向轉性率獲得平衡之處， 故而藉由採用如此之構造可使上述端子形成面與中立面大 致一致。 本發明之實施基板中，上述電子裝置於上述端子形成面 朝向上述可撓性基板側之狀態下而安裝，由此上述電子裝 置可具有與上述可撓性基板和構造構件相吻合之彎曲彈性 率大致相等的彎曲彈性率，上述構造構件形成於該可挽性 基板與上述端子形成面之間。將其端子形成面朝向基板側 (下側）而對電子裝置進行安裝時，將此電子裝置本身之彎 鲁肖彈性率設為與安裝有電子裝置之基板側之構造構件（例 了撓]生基板與开》成於其表面之絕緣層的積層體）的彎 曲彈I·生率大致相等，由此可使上述端子形成面與中立面大 致一致。 本發明之安裝基板中，上述布線圖案上形成有向上述電 子袁置側犬出之導體柱，上述電子裝置可介以環繞上述導 版柱而设置之黏接層，安裝於上述可撓性基板上，且上述 電子裝置之連接端子可構成為電性連接至上述導體柱中。 藉由如此之構造，無需使用ACF(異方性導電膜）或ACP(異 105731.doc 1272747 方性導電膠）等便可將電子裝置安裝於基板上。尤其，若 上述導體柱為燒製金屬微粒子而形成者，則不易發生安裝 ^裝置時之电子裝置破損等情況，且可獲得良好之連接 端子與布線圖案之接合性。
、本發明之安裝基板中，較好的是上述可撓性基板上之上 述電子裝置之外側區域上，形成有覆蓋住上述布線圖案之 絕緣層。若採用如此之構造，可由上述絕緣層而對布線圖 案進行保護，且可提高安裝基板之可靠性。 #本lx明之女裝基板中，±述絕緣層亦可形成於上述電子 f置上。採用如此之構造，可由上述絕緣層而對上述電子 裝置進行保護，且可有效防止電子裝置脫落等。 、本發明之安I基板中亦可，上述f子裝置於上述端子形 成面朝向與上述可撓性基板為相反側時而安裝，並且形成 有覆蓋該電子裝置之絕緣層，形成於上述電子裝置上=嗜 緣層’具有與上料子裝置、上述可撓性基板及構造構件 相吻合之彎㈣性率A致㈣㈣㈣性率，上述構造構 件設於該電子裝置與可撓性基板之間。電子裝置之端子形 成面亦可朝向與可撓性基板為相反側而配置。此時，端子 形成面之可撓性基板側，配置有電子震置主體與可撓性基 ::故而’藉由將設於電子裝置上之絕緣層之彎曲彈性二 设為與此等相吻合之彎曲彈性率一致， 形成面一致。 了使中立面與端子 本發明之安裝基板中，較好的是上 ,.A ^ 义电于哀置之側面部 形成有包含自該側面部向外側延伸之斜面部的傾斜部件， 105731.doc 1272747 2接端子與布線圖案介以連接布線而電 連接布線抵接於上㈣斜料之斜㈣㈣置q採用Γ :之：造’裝载於可換性基板上之電子裝置之端子形成面 ♦、可^性基板表面之階差H述㈣部件而得到緩 和’故而可將布線環繞於自連接端子經由傾斜 =布線圖案的基板上，並可實現電子裝置安裝構造之 •、冑明之安裝基板中，較好的是上述電子裝置之外側區 域中’夾住該電子裝置之端子形成面之延長面且分別配置 於兩側之該安裝基板之構造構件，具有大致相等之彎曲彈 性率。即’較好的是安裝有電子裝置之區域之外側，愈電 子裝置之端子形成面為同一面之位置上亦配置有中立面。 藉此:可對由彎曲應力產生之電晶體特性變化進行控制， 進而獲得更優良之連接可靠性。 本發明之安裝基板中，較好的是上述電子裝置之厚度為 • 5 Ο μηι以下。若採用如此之構造，安裝基板整體可獲得良 好之可撓性。 繼而，本發明旨在提供一種安裝基板之製造方法，其特 倣在於其係製造上述本發明之安裝基板之方法，且包含以 下工序，於上述可撓性基板上形成包含布線圖案之布線層 的工序’使用液滴喷出法’將包含金屬微粒子之液狀體配 置於上述布線圖案上及/或上述電子裝置之連接端子上的 工序；介以上述液狀體而將上述布線圖案與上述連接端子 接合的工序；以及，對上述液狀體進行乾燥固化處理而形 105731.doc 1272747 電體’將上述布線圖案與連接端子導通的工序。依據 製造方法，因對配置於布線圖案之連接部盥電子裝置之 = '端子間的液狀體進行燒製處理，並燒結其金屬微粒 错此將上述布線圖案之連接部與上述電子裝置之連接 $子連接，並進行電性導通，故而，連接及導通處理中需 之厚度成為如金屬微粒子燒結體之極薄厚&，因此 獲得之安裝構造薄型化。 浔至化又’基本上無需向電子裝置加壓 以燒製處理便可確保上述連接部與端子間的導通，因 =，即使於安裝例如極薄半導體晶片時，亦可無需向其加 [而進仃安裝處理。由此’可避免因加壓而產生之所謂之 半導體晶片破損或連接可靠性降低的不良現象。由此，可 確保獲得之安裝構造之彎曲性及連接可靠性。 本發明之安裝基板之製造方法中，較好的是將上述液狀 體配置於上述布線圖案上及/或上述連接端子上，將導體 柱立設於上述布線圖案或上述連接端子上。若以此方式立 設導主’可€得安裝電子裝置時容易對準之優點。 本發明之安裝基板之製造方法中，較好的是於露出上述 導體柱之狀態下形成覆蓋上述布線圖案之黏接層，並將上 述電子裝置裝載於該黏接層上，藉此將電子裝置安裝至上 述可撓性基板上。若採用如此之製造方法，可使電子裝置 與可挽性基板之黏接性良好’並可提高獲得之安裝基板之 可靠性。又，因於露出導體柱上面之狀態下形成黏接層， 故而可容易地將電子裝置之連接端子對準導體柱，並可正 確且容易地進行製造。 105731.doc -10 - 1272747 又，本發明為解決上述問題，提供有—種安裝基板，1 特徵在於其係將具有包含連接端子之端子形成面之電子裝 置安裝於可撓性基板上而形成者，上述電子裝置於上述端 子形成面朝向與上述可撓性基板為相反側時而配置，並將 與上述電子裝置之端子形成面為相反側之裝載面，配置為 與該安裝基板之厚度方向上之中立面大致一致。
此安裝基板將可撓性基板用作基層，故而具有可挽性， 且可比較自由地進行彎曲 '繼而，以與上述電子裝置之端 子形成面為相反側之裝冑面與安裝基板《中立面大致一致 之方式安裝電子裝置’故而’彎曲安裝基板時所產生之變 形現象，於配置於中立面上之電子裝置之裝載面中幾乎為 零。因此’幫曲應力不會作用於對電子裝置進行薄層化處 :里時之、成為研磨面之與端子形成面為相反側的裝载面。 藉匕1防止於研磨時可能會產生微小裂痕(研磨裂痕)之 裝載面上’產生由研磨裂痕之伸展引起之破損，可實現變 曲耐性優良、可靠性優良之安裝基板。 本發明之安裝基板中，較好的是於該安裝基板之厚度方 向上，夾住上述電子裝置之震載面且分別配置於兩側之構 造構件具有大致相等之彎曲彈性率。上述中立面之位置位 於安裝基板之厚度方向上彎曲彈性率獲得平衡之處，故而 藉由採用如此之構造可使上述裝載面與中立面大致—致。 、本發明之安裝基板中’較好的是上述可撓性基板上之上 述電子裝置之外侧區域上，形成有覆蓋住上述布線圖案之 絕緣層。若採用如此之構造，可由上述絕緣層而對布線圖 10573l.doc -11 · 1272747 案進行保護，且可提高安裝基板之可靠性。 本發明之安裝基板中，上述絕緣層亦可形成於上述電子 裝置上。採用如此之構造，可由上述絕緣層而對上述電子 裝置進行保護，又可有效防止電子裝置脫落等。
此之構造，裝載於可撓性基板上之電子裝置之端子形成面 與可撓性基板表面之階差，可因上述傾斜部件*得到緩 和，故而可將布線環繞於自連接端子經由傾斜部件之斜面 部而至布線圖案的基板上’並可實現電子裝置安裳構造之 薄型化。 本發明之安裝基板中，較好的是上述電子裝置之側面部 形成有包含自該側面部向外側延伸之斜面部的傾斜部件， 且上述連接端子與布線圖案介以連接布線而電性連接，此 連接布線抵接於上述傾斜部件之斜面部而設置。若採用如 本發明之安裝基板中，較好的是上述電子裝置之厚产為 陣以下。若採用如此之構造，安裝基板整體可獲^良 好之可彎曲性。 繼而：本發明之安裝基板之製造方法，其特徵在於係將 面作為具有連接端子之端子形《面的電子裝置安裝至可 撓性基板上而形成之安裝基板的製造方法’且包含以下工 序’介以黏接層而將電子裝置裝載於上述可撓性基板上的 工序；於上述電子裝置之側面部形成具有自上述端子形成 面延伸至可撓性基板上的斜面部之傾斜部件的工序；以 及’形成經由上述傾斜部件之斜面部表面而將上述連接端 子與上述布線圖㈣性連接的連接布線之4;且將夹住 105731.doc •12- 1272747 上述電子裝置之裝載面且分別配置於兩側之構造構件 曲彈性率設為大致相等。 繼而，本發明之電子機器之特徵在於，具有上述本發明 之安裳基板。依據此構造，藉由具有薄型、可挽性之特性 電II連接之可Λ性亦優良的安裝基板，可提供薄型、高 可靠性之電子機器。 【實施方式】 (第一實施形態） 以下，參照圖式就本發明之實施形態加以詳細說明。 圖1係表示本發明之安裝基板之-實施形態的部分剖面 構造圖。如圖i所示，安裝基板I0FD具有將半導體晶片卜 面側具有連接端子之電子裝置）2安裝於可挽性基板i上之 構每可撓性基板i含有聚醯亞胺等樹脂，故而可使用形 成為帶狀或薄片狀等各種形狀者。 可撓性基板1上形成有金屬布線（布線圖案卜此金屬布 、系I成於可撓性基板上之布線’或如下所述使用液滴 '去而元成者’藉由銀微粒子等金屬微粒子之燒結體而 丰’ 1再者’此金屬布線4於可撓性基板1之邊緣側與圖中 :彳線連接，介以此布線而與不同於可撓性基板1 於部端子（圖中未圖示）連接。又，此金屬布線4之位 連①'4基板i中央部之端部，成為與半導體晶片2之端子 且右^連接a，此連接部4&上形成有高度約為數十,之 具有導電性之柱狀導體柱5。 系由液滴喷出法而形成者’由對銀微粒子等金 i05731.doc 13 1272747 • 屬微粒子進行燒結而形成。 點拉j繞性基板1上形成有含有熱固性之絕緣性樹脂之 之肤I °此黏接層6如下所述，於露出上述導體柱5上面 曰〜下倀盍住金屬布線4，藉此將可撓性基板!與半導體 ]連接起來。至於形成此黏接層6之熱固性樹脂， 可使用例如環氧系樹脂材料等。 、M而’半導體晶片2於其端子形成面（能動面）2a朝向可撓 Φ 土板1側之狀恶下而配置於此黏接層6上。半導體晶片2 於本貝轭形恶中係形成為厚度5〇 以下之極薄者，於墊 片（連接端子）7朝向可撓性基板！側之狀態下而安裝，即係 由倒裝焊接而形成者。此半導體晶片2之墊片7,係例如於 自半導體晶片2内之積體電路（未圖示）引出之含有鋁合金之 基層（未圖示）上，對Ni、此順序進行電鍍處理而形成 者再者於墊片7中成為實際接合層之最外層（最上層）， Au之外亦可使用例如Ag、Cu、Sn及In，進而亦可使用包 φ 含此等複數個之積層構造。 此塾片7直接抵接於上述導體柱5,並與之接合，籍此， 形成有與上述金屬布線4間之導電連接構造。又，如此， 墊片7介以導體柱5而與金屬布線4連接，並且，半導體晶 片2之下面介以黏接層6而與可撓性基板1連接，藉此，半 導體晶片2牛固地固定於可挽性基板1上。 又，為了覆蓋住半導體晶片2之外側區域之金屬布線4， 形成有含有丙稀樹脂或環氧樹脂等有機絕緣材料之絕緣層 8。此絕緣層8係具有保護金屬布線4之功能之所謂之鈍化 105731.doc -14- 1272747 _/於防止因與外部接觸而造成之金屬布線4短路或、 因環境之水分或反應性氣體而造成之金屬布線4腐姓等。 再者’此絕緣層8不僅覆蓋金屬布線4，亦可形成為同時覆 鍊半導體晶片2之表面。即，亦可將半導體晶片2封止於 巴象層8與可撓性基板1之間。此時，亦具有P方止半導體晶 片2破損或脫落之功能。 曰曰 “具備上述構造之本實施形態之安裝基板10FD中，將薄層 • 半導體晶片2安裝於具有可撓性之可撓性基板！上，故而二 例如可彎曲為側視成之狀態下安裝於電子機器上，或 車乂好疋用於電子紙張等可變形之顯示裝置之控制部等中。 繼而’如圖1所示’本實施形態之安裝基板卿中，其中 立面（向安裝基板10FD作用彎曲應力時，變形ε為零之 面）ηρ與半導體晶片2之端子形成面以大致一致。即，於安 4基板1GFD之厚度方向上，將夾住端子形成面〜且分別配 置於兩側之構造構件（可撓性基板1、半導體晶片2及黏接 • =6等）之贊曲彈性率調整為大致相等。藉由採用如此之構 造，本實施形態之安裝基板10FD中，對基板進行彎曲時， 半導體晶M2與導體柱5之連接部分之變形A致為零，不存 在因變形而產生之電晶體特性變化，進而可有效防止該連 #料中之電性連接受m，形成具備優良f曲耐性 之高可靠性之安裝基板。 上述彎曲彈性率稱為於3點彎曲試驗中獲得之、使用負 荷-、号、曲曲線而計算的彈性率Eb，由以下公式（1)計管得 出。其中，公式⑴中，L為支點（支持捲筒）間距，w為試驗 105731.doc 15 1272747 片寬度’t為試驗片屋 ^ ^ 區诚内任音、^ 荷_彎曲曲線之彈性變形 J 之負荷，Y為於上述負荷F下之彎曲(變 位）。再者，公式⑴中，亦可將負荷F作為2點負荷ρι、ρ2 之差㈣)’將¥作為上述負荷…分別對應之變位 yl、y2 之差（yi-y2)。
Eb = L3F/4wt3Y〜（i) 圖1所示之安裝基板_中’將積層構造物之彎曲彈性 率》周整為與半導體晶片2之彎曲彈性率大致相等，上述積 層構造物包含自端子形成面2a配置至圖示下側之黏接層6 與可撓性基板曲彈性率可依據可挽性基板以厚度或 揚氏模量進行調整。再者，本實施形態中，若上述金屬布 線4係使用液滴噴出、本 赁出法而形成者，因其膜厚形成為極薄 狀，故而幾乎不會對上述彎曲彈性率產生影響。 又，本實施形態之安裝基板1〇FD中，較好的是半導體晶 片2之外側區域中，亦於與半導體晶片2之端子形成面^為 同面之位置上，配置有安裝基板之中立面。因為若因安 裝基板上之部位不同而導致中立面位置不同，則彎曲安裝 基板時因部位不时產生變位之大小不同，將無法獲得均、 衡之彎曲性，又亦有可能局部會受到較大負荷。 如圖所不，半導體晶片2之外側區域中，可撓性基板1上 積層有金屬布線4與絕緣層8，與端子形成面2&為同一面之 中立面np位於絕緣層8中。因此，用以對中立面位置進行 調整之彎曲彈性率之調整，可主要藉由絕緣層8之厚度調 整而進行。 ° 105731.doc -16- 1272747 - 如上所述，本實施形態之安裝基板10FD具有與半導體晶 片2之端子形成面2a大致一致之中立面，因此，幾乎不存 在彎曲基板時之端子形成面2a之變形現象。藉此，形成為 相對於f曲應力半導體晶片2與金屬布線4之導電連接部可 獲得優良耐性之高可靠性的安裝基板。 (第2實施形態） 繼而，參照圖2就本發明之第2實施形態之安裝基板的構 • 造加以說明。圖2係本實施形態之安裝基板之部分剖面構 造圖。 再者’本實施形態之安裝基板丨㈣中，除電子裴置即半 導體晶片2之安裝構造不同外’其他係與先前請施形態 之安裝基板10FD同樣之構造，因此’圖2中付與與圖丨共通 之符號之構造要素，將作為同一構造要素而省略對其之說 日月。 八 圖2所示之安裝基板〗〇FU具有於可撓性基板〗上形成有金 # 屬布線4，且半導體晶片2介以黏接層6而安裝的構造。半 導體晶片2於其端子形成面以朝向與可撓性基板4相反側 之狀恶下而連接’仰焊於可撓性基板1上。 半導體晶片2之側面部形成有包含自端子形成面2a向外 延伸至可撓性基板1上之斜面部的傾斜部件9，並形成有經 由此傾斜部件9之斜面部表面且將墊片7與金屬布線4電性 連接之連接布線4c。連接布線乜係使用液滴喷出法而形成 者，係燒結金屬微粒子後形成之薄膜。傾斜部件9具有緩 和半導體晶片2之端子形成面2a與可撓性基板i表面之階差 105731.doc 1272747 的作用’具有防止使用液滴噴出法而形成之連接布線乜斷 線等功能。 傾斜部件9可使用分配器等液體材料塗布方法，將例如 聚醯亞胺樹脂、矽改性聚醯亞胺樹脂、環氧樹脂、矽改性 袁氧树月曰、本幷環丁稀（BCB : benzocyclobutene)及、聚苯 幷μ坐（PBO · polybenzoxazole)等樹脂材料塗布於可撓性
基板1上而形成。或，亦可藉由液滴喷出法或固定乾膜法 而形成。 於包含半導體晶片2、金屬布線4及連接布線乜等之可撓 性基板1上，形成有含有丙稀樹脂或環氧樹脂等有機絕緣 材料之絕緣層8a。如圖所#，絕緣層&於半導體晶片2上 舁於其外側區域上之膜厚不$，本實施形態中，形成為於 半導體晶片2上較薄，而於半導體晶片2外側上較厚。 曰八有上述構造之本實施形態之安裝基板中，半導體 晶片2之端子形成面2績安録板1嶋之巾立面np大致一 致’二此方式調整各構造構件之彎曲彈性率。本實施形態 中，端子形成面2a之圖示下側配置有可撓性基心、黏接 層6與半導體晶片2，圖示上側僅配置有絕緣層8a，因此， ㈣上述中立面時，可主要藉由絕緣層8a之材質變更及/ 或厚度調整來進行。 曰 貝& &恶之安裝基板1卿中，較好的是將半導體 =2外側區域中之中立面，調整為與半導體晶片2之端‘ 2a為同一面。相關區域中之中立面調整，亦可夢由 絕緣層8a之材質變更及/或厚度調整來進行。 曰 105731.doc 1272747 如此’第2實施形態之安裝基板1〇fu中，半導體晶片2之 端子形成面2a與安裝基板之中立面叩大致—致，因此，彎 曲安裝基板10FU時，幾乎不存在連接布線乜與墊片之接人 部的變形，可獲得優良之連接可靠性。又，因連接布線二 係使用液滴噴出法而形成者，故而與焊接線方法相比，可 將電子裝置極薄安裝，非常有利於實現裝載有此安裝基板 之電子機器的薄型化。 (安裝基板之製造方法） 繼而，參照圖3就圖丨所示之第〗實施形態之安裝基板 10FD的製造方法加以說明。 、土 首先，如圖3⑷所示，準備可撓性基板j，繼而藉由液滴 喷出法將液狀體喷出配置於可撓性基板丨上之特定位置 處，^述液狀體將金屬微粒子分散於分散液而形成。至於 液滴噴出法’可採用噴墨法或分配器法等’尤其噴墨法可 將：望數量之液狀材料配置於希望之位置處，因而較好， 本實施形態中使用噴墨法。 +此處’對喷墨法中進行噴出處理時較好使用之液滴喷頭 (噴土頭）加以，兒明。液滴噴頭34如圖♦)所示，例如包含 不銹鋼H之噴嘴板12與振動板13 ’且介以隔離構件（儲存 )而將兩者接合。喷嘴板12與振動板13之間，由隔離 構件14而形成有複數個空間15與積液間⑺。各個空間㈣ 、、疒門16之内部充滿液狀材料，各個空間w與積液間μ介 2應口 17而連通。又，噴嘴板12上，縱橫排列地形成有 Ή個用以將液狀材料自空間15處喷出之噴嘴孔18。另一 10573 l.doc -19- 1272747 方面’振動板13上形成有用以將液狀材料供給至積液間16 之孔19。 又’於與對向於振動板丨3之空間丨5之面為相反側的面 上’如圖4(b)所示，接合有壓電元件（壓電元件）2〇。此壓 電元件20位於一對電極21之間，通電時，此將突向外側而 成為彎曲狀。繼而，基於如此之構造，接合有壓電元件2〇 之振動板13與壓電元件2〇成一體，亦同時向外側彎曲，藉 此工間15之谷積增大。因此，自積液間丨6介以供應口丨7而 將相當於增大容積部分之液狀材料流入空間15中。又，自 如此之狀態解除向壓電元件2〇之通電時，壓電元件2〇與振 動板13皆回復原狀。因此，空間15亦回復至原來容積，故 而二間15内部之液狀材料壓力上升，將液狀材料（液狀體） 之液滴22自噴嘴孔18處朝向可撓性基板}而噴出。 至於喷出之液狀體，可使用將金、銀、自、把及録等金 屬微粒子分散於分散液中而形成者。此處，關於金屬微粒 子，為提高其分散性，亦可表面塗布有機物等後再加以利 用。至於向金屬微粒子表面塗布之塗布材料，例如可例舉 會誘發立體障礙或靜電排斥之聚合體。又，較好的是全屬 微粒子之粒徑為5 nm以上_以下。因為若大於〇1 μι則容易導致噴頭之喷嘴堵塞’將難以進行喷墨法之噴 出處理。又，因為若小於5 ，則泠右从』丨丄 _則塗布材料相對於金屬微 拉子之體積比將增大，導致獲得之膜中有機物比例過多。 至於分散金屬微粒子之分散液，較好的是於室溫下墓氣 昼為mmHg以上、2〇〇 mmHg以下（約〇 133 Pa以上 105731.doc -20- 1272747 乂下）者。因為蒸氣塵高於20〇11111111§時，喷出後 分散液將急速蒸發’難以形成良好之膜（布線膜）。 又較好的疋分散液之蒸氣壓係〇.〇〇 1 mmHg以上、5〇 以下（約0,133pa以上、㈣pa以下）者。因為若蒸氣 壓南於50 mmHg ’則使用噴墨法(液滴喷出法)喷出液滴 時’容易因乾燥而導致喷嘴堵塞，難以進行穩定之喷出處 :里。另-方面，因為若室溫下蒸氣壓低於〇〇〇ι _珣之分 放液時，則乾燥會延遲，膜中易殘留分散液，之後工序中 進行加熱處理後，難以獲得優質導電膜（布線 於所使用之分散液，係可分散上述金屬微粒子者，只 要係不會凝結者其他並無特別限定，水之外，可例舉甲 醇、乙醇、丙醇及丁醇等醇類；n•庚貌、n_辛烧、癸烧、 :四烧、萘烧、甲苯、二甲苯、異丙基苯、四甲基苯、 :、二戊烯、四氫化萘、十氣化蔡及苯基環己烧等碳氯化 己物系化合物；或乙二醇二 咚一 T醚、乙二醇二乙醚、乙二醇 7基乙基醚、二乙二醇 ^ 籽^醚、一乙二醇二乙醚、二乙二 酉子甲基乙基醚、1,2-二甲氧美r p r 虱基乙烷，二（2-甲氧乙基）醚及p- 一 ％、燒等醚係化合物；進而 延叻石反酉夂丙烯、丫-丁内酯、氺甲基_ 2_咄咯烷酮、二甲基甲醯胺、— 人仏 一甲亞碾及環己酮等極性化 B物。其中，考慮到微粒 卞之刀放性與分散液之穩定性， 以及應用於喷墨法中之容易性， ^ 車乂好的疋使用水、醇類、 石厌虱化合物系化合物及醚係 了化口物’更好的是至於分散 液’可例舉水、碳氫化合物♦ 气人h屯 初糸化合物。此等分散液可單獨 5 為2種以上之混合物而加以利用。 10573l.doc -21 - 1272747 將上述金屬微粒子分散至分散液中時之分散質濃度 金屬微粒子濃度為1質量％以上、80質量％以下、又 杀矽十入Μ 士 負里/〇以下，可依據所 。希之孟屬布線4之膜厚而進行調整。因為若不足！質量 。’ ^之後藉由加熱而進行之燒製處理將需要較長時間， 又，若超過8 0質量％，則易導致凝姓 膜。 易等致綾、、，口而難以獲得均衡之 將上述金屬微粒子分散至分散液中 刀月又/從甲而形成之液狀體的表 面張力，較好的是於〇.〇2 N/nm上、QQ7 N/mv 攀 咖m从 υ·υ/ N/m以下之範圍 由喷墨法將液狀體喷出時1表面張力不足002 N/ml此液狀體之於喷嘴面上之濕潤性將增大，由 ‘致弓曲變形，若超過〇·〇7 N/m ’則噴嘴前端之凹凸形狀 將不穩定，由此將難以對喷出量、喷出時間進行控制/ 、上述液狀體之黏度，較好的是i mPa.sa上、5〇必.S 以下。因為藉由喷墨法進行喷出處理時，若黏产小於 1 mPa. S’㈣頭之噴嘴周邊部會因墨水(液狀體)：流： # *易受到污染，又，若黏度大於50 mPa. S，則喷嘴孔中 發生堵塞之次數將增多，將難以順利進行液滴噴出處理。 本實施形態中，將使用銀微粒子作為金屬微粒子之而形 成之液狀體之液滴22 ’如圖3⑷所示，自液滴噴頭34處噴 出，並向可撓性基板1上應該形成布線之處滴下，形成中 間構造體4b，此中間構造體4b經燒製處理後，將成為金屬 布線4。本實施形態中，此中間構造體仆係指於基板上滴 下之液狀體及此液狀體之乾燥物。喷出配置上述液狀體 呀，較好的是不發生積液（膨脹），大致將液滴重量控制為 105731.doc -22- 1272747 可連績喷出狀。又，亦可接用於筮 A ^ + ^ 刀j ί木用於弟一次之噴出處理中間隔 喷出複數個相互不連接之液滴，並藉由第二次之後之噴出 將其間隔填埋的喷出方法。 如此形成金屬布線4之中間構造體朴後，以約2〇〇t溫戶 對此加熱進行燒製，並燒結金屬微粒子（銀微粒子），= 3⑻所示形成金屬布線4。再者，對金屬布線4之中間構造 體4b ’亦可不進行藉由燒結金職粒子（銀微粒子）而進行 之真硬化處理’而是停⑽達到蒸發掉液狀體中分散液程 度之假硬化處理。 繼而，與金屬布線4之形成同樣，將上述液狀體自液滴 喷頭34,柱狀喷出至獲得之金屬布線4之連接部牦，即包 含可撓性基板！中央部之端部之連接部仏上，形成導體柱$ 之中間構造體5a。繼而，對此中間構造體化進行乾燥，藉 此於連接部4a上保持為柱狀。至於此乾燥處理，可採用約 數十C左右之加熱處理，或由乾燥器進行溫風或熱風之吹 風處理，進而減壓處理等。 如此乾燥導體柱5之中間構造體5&後，將上述埶固性樹 ㈣布於可撓性基板i上’以成為覆蓋住上述金屬布線4之 狀態’如圖3⑷所示形成未硬化狀態下之黏接層。關於 塗布方法並無特別限^，可採用滚塗法或液滴喷出法等眾 所周知之塗布法。又’形成此黏接層㈣，尤其需要將上 述導體柱5之中間構造體5a之上面露出黏接層仏。 繼而，將半導體晶片2之位置對準此未硬化狀態之黏接 層6a上’如圖3⑷所示，於上述導體柱5之中間構造體5&上 105731.doc 23· 1272747 接合有墊片7之狀態下，裝載該半導體晶片2。此時，不對 半導體晶片2進行加壓，而僅大致以其自重之壓力而將其 墊片7與上述柱狀體5之前驅體5&接合。如此，因中間構造 體5a為假硬化狀態，故而即使半導體晶片2係形成為“ 以下厚度之極薄者，重量雖輕，亦會因半導體晶片2自重 之壓力而易於變形，並與墊片7良好地抵接。同樣地，黏 接層6a亦為未硬化狀態，故而良好地抵接於半導體晶片2 之下面。 其後，於200。(：溫度下進行約2小時之加熱處理，藉此燒 製軋焯狀態之上述中間構造體5a並燒結金屬微粒子（銀微 粒子），形成導體柱5。藉此，介以此導體柱5，上述金屬 布線4之連接部4a與上述半導體晶片2之墊片7連接且電性 導通。又，與此同時對黏接層6a進行硬化處理而形成黏接 層6，介以此黏接層6，半導體晶片2之下面與可撓性基板i 緊密固定’獲得具有圖1所示之安裝構造之安裝基板 10FD。 再者，如上所述，對金屬布線4之中間構造體仆不進行 真硬化處理而停留於假硬化處理時，藉由此處之對導體柱 5之中間構造體5a之燒製處理，中間構造體乜之金屬微粒 子亦燒結。 製造由上述工序而獲得之安裝基板1 OFD時，適當選擇並 调整可撓性基板1之材質及板厚、黏接層6之材質及膜厚、 以及半導體晶片2之板厚等，藉此可使安裝基板1〇FD之中 立面成為與半導體晶片2之端子形成面〜大致一致。並 105731.doc -24- 1272747 且，獲得之安裝基板1〇FDf，彎曲基板時，墊片7與導體 柱5之連接部中之變形幾乎消失，可獲得極優之連接可靠 性0 由此，此安裝基板10FD可確保整體之彎曲性，且亦可確 保其連接可靠性。 又，因採用介以導體柱5而將金屬布線4之連接部“與墊 片7電性連接的構造，以露出導體柱5(中間構造體$甸之上 鲁面之方式而形成未硬化之黏接層6a，故而，安裝半導體晶 片2時，將墊片7連接至連接部4a上之對準處理變得容易進 行，進而’藉由導體柱5含有金屬微粒子之燒結體，連接 邛4a與墊片7之連接強度提高，且連接可靠性亦提高。 又，亦藉由配置於可撓性基板丨與半導體晶片2間之黏接層 6，可獲得可撓性基板丨與半導體晶片2間之良好接合性及 封止性的優點。 又，如此之安裝基板之製造方法中，因對作為配置於金 • 屬布線4之連接部4a與半導體晶片2之墊片7間之導體柱5之 中間構造體5a的液狀體進行燒製處理，並燒結其金屬微粒 子，藉此將上述連接部4a與上述墊片7連接且進行電性導 通，故而，導電連接中需要之厚度成為如金屬微粒子燒結 體之極薄厚度，因此可使獲得之安裝構造薄型化。 又，基本上不向半導體晶片2加壓而僅以燒製處理便可 確保上述連接部4a與墊片7間的導通，因此，例如即使於 安裝極薄半導體晶片2時，亦可不向其加壓而進行安裝處 理。由此，可避免因加壓而產生之所謂之半導體晶片: 105731.doc -25- 1272747 損或連接可#性低下的不良現象。由a，尤其本發明較好 疋應用於各種電子機器或其零件（電子零件）中超薄型封裝 之製造。 ~ 又，使用液滴噴出法將分散金屬微粒子後之液狀體配置 於孟屬布線4之連接部4a上，藉此形成柱狀之導體柱5，並 將上述連接部4a與上述墊片7連接且進行電性導通，故 而’女裝半導體晶片2時，可容易地進行將墊片7連接至連 接邛4a上之對準處理，進而，可提高連接部乜與墊片7之 連接強度，且可提高連接可靠性。 又，通過使用有分散金屬微粒子後之液狀體的液滴噴出 ，化成上述金屬布線4，故而，此金屬布線4亦可充分薄 型化，因此進一步使安裝構造整體薄型化。又，可於相同 裝置中連續進行金屬布線4之形成處理與、用以將金屬布 線4與上述墊片7接合之液狀體的喷出處理，故而可提高生 產性。 又，介以上述液狀體而將上述金屬布線4之連接部乜與 =述半導體晶片2之墊片7接合的工序之前，首先於露出上 述連接部4a之狀態下，形成含有熱固性之絕緣性樹脂之黏 曰a且藉由用以進行連接及導通處理之液狀體之燒製 S有熱固性樹脂之黏接層6 a亦會同時硬化，故而， 可更好地進行可撓性基板丨與半導體晶片2間之接合及封止 進而與藉由使用底部填充劑而進行封止處理等情形 _目 ^卜 厂 ’因不需要硬化處理時間而可提高生產性。 再者，上述實施形態中，於金屬布線4之連接部物上形 10573l.d〇( -26- 1272747 . 成導體柱5，並介以此導體柱5將連接部扑與墊片7連接並 導通，但本發明並不僅限於此，亦可將包含金屬微粒子之 液狀體配置於連接部4a上，並直接將墊片7與此液狀體連 接此時液狀體可配置於接合部4a上，亦可配置於墊片 7上。因任一情形下，分散金屬微粒子後之液狀體，對含 有相同金屬之連接部4a或墊片7中任一之濕潤性皆良好， 故而，藉由液滴喷出法等進行選擇性配置，皆可良好地塗 _ 布於連接部4a或墊片7上。 又，亦可不藉由使用包含金屬微粒子之液狀體之液相法 形成導體柱5,而是藉由電鍍處理等形成金屬導電體，此 時，亦將分散金屬微粒子後之液狀體配置於此導體柱上， 並介以此液狀體將墊片7連接即可。 又，上述實施形態中，於可撓性基板丨上形成黏接層6， 藉此進行可撓性基板i與半導體晶片2間之接合及封止處 理，但本發明並不僅限於此，例如亦可使用底部填充劑而 • 進行可撓性基板1與半導體晶片2間之封止處理。 (第3實施形態） 繼而，參照圖5就本發明之第3實施形態之安裝基板的構 造加以說明。圖5係本實施形態之安裝基板之部分剖面構 圖 〇 再者，本實施形態中，付與與上述實施形態之安裝基板 /、通之符號的構造要素，將作為同一構造要素而省略對其 之說明。 如圖5所示，安裝基板110具有將半導體晶片2安裝於可 105731.doc -27- 1272747 • a 土板i上之構造。可撓性基板l含有聚醯亞胺等樹脂， 可使用形成為帶狀或薄片狀等各種形狀者。 可撓性基板丨上形成有金屬布線4，且介以連接布線乜， 連接金屬布線4與半導體晶片2之墊片7。又，可撓性基板i 上形成有含有熱固性之絕緣性樹脂之黏接層6。此黏接層6 係將可撓性基板1與半導體晶片2之間連接者，至於形成黏 接層6之熱固性樹脂，例如可使用環氧系樹脂材料等。 φ 、、廬而，半導體晶片2於與其端子形成面（能動面）2a為相反 側之裝載面2b朝向可撓性基板丨侧之狀態下而黏接於此黏 接層6上。半導體晶片2於本實施形態中係形成為厚度％ 以下之極薄者，於能動面即端子形成面以朝向與可撓性基 板1為相反側之狀恶下而安裝，即係由仰焊而形成者。 半導體晶片2之墊片7，係例如於自半導體晶片2内之積 體電路（未圖示）引出之含有鋁合金之基層（未圖示）上，對 Ni、Αιι按此順序進行電鍍處理而形成者。再者，於墊片7 • 中作為實際接合層之最外層（最上層），Αιι之外亦可例如使 用Ag、Cu、Sn及In，進而亦可使用包含此等複數個之積層 構造。 、 半導體晶片2之側面部形成有形成自端子形成面以向外 延伸至可撓性基板1上之斜面部的傾斜部件9，並形成有經 由此傾斜部件9之斜面部表面，將墊片7與金屬布線4連接 之連接布線4c。連接布線4c係使用液滴噴出法而形成者， 係燒結金屬微粒子後形成之布線。傾斜部件9具有緩和半 導體晶片2之端子形成面2a與可撓性基板1表面之階差的作 105731.doc -28- 1272747 用，具有防止使用液滴噴出 功能。 法而形成之連接布線4c斷線等
傾斜部件9可使用分配器等液體材料塗布方法，將例如 聚醯亞胺樹脂、矽改性聚醯亞胺樹脂、環氧樹脂、矽改性 %乳樹脂、苯幷環丁烯(卿：^卿—叫及、聚苯 幷心、坐（PBG . pGlybenZGXaz()le)等樹輯料塗布於可挽性 基板1上而形成。或’亦可藉由液滴喷出法或固定乾膜法 而形成。 於包3半導體晶片2、金屬布線4及連接布線化等之可挽 性基板1上，形成有含有丙稀樹脂或環氧樹脂等有機絕緣 ；、邑緣層8a。絕緣層83係保護金屬布線4及半導體晶 片2之所謂之鈍化膜’具有防止因與外部接觸而造成之金 屬布線4短路、因水分或反應性氣體而造成之金屬布線*、 連接布線4#腐钱、以及半導體晶片2破損等功能。如圖 —’邑緣層8a於半導體晶片2上與於其外側區域上之膜 厚不同，本實施形態中，形成為於半導體晶片2上較薄，、 於半導體晶片2外側較厚。 2備上述構造之本實施形態之安裝基板110中，將薄層 半V體aa片2安裝於具有可撓性之可撓性基板i上，因此， 例如可以彎曲為側視成U形之狀態將其安裝於電子機器 ^或較好是應用於電子紙張等可變形之顯示裝置之控制 邛等中。並且’如圖5所示，本實施形態之安裝基板 中，其中立面（向安裝基板110作用彎曲應力時，變形ε為 零之面㈣料導體晶片2之端子形成面2a大致-致。即Υ 105731.doc -29- 1272747 :安4基板110之厚度方向上’將夹住端子形成面^且分 別配置於兩侧之構造構件(可撓性基板卜半導體晶片2、 黏接層6及絕緣㈣等）的彎曲彈性率調整為大致相等。
—將上述中立面np調整為與半導體晶片2之裝載面几大致 -致’藉此本實施形態之安裝基板11〇成為具有優良之-“ “生者。+導體晶片2係將厚度薄層化至約50 μηι之極薄 電子/置’對其進行薄層化處理時，通常使用自端子形成 面（能動面）2a之相反側開始研磨半導體基板的方法。因 使用磨石等研磨方法而進行之加工處理，會造成半導 體晶片2之裝載㈣上產生微小裂痕（研磨裂痕）。此研磨裂 ㈣半導體晶片2之動作本身沒有影響，但係如本實施形 恶之安裝基板之使用時會受到彎曲者，則對半導體晶片2 ，行彈性變形時，亦會造成研磨裂痕擴展，由此使晶月破 T °因此’本實施形態中’對各個構造構件之材質及/或 厚度進仃㈣’使半導體晶片2之裝載面“與安裝基板ιι〇 之中立面np大致一致，藉此’彎曲安裝基板ιι〇時之變 ^於4载面2b上幾乎為零，由此可有效防止因彎曲應力 而造成之研磨裂痕擴展。 圖5所示之安裝基板11〇中，將包含黏接層6和可挽性基 板1之積層構造物之彎曲彈性率，調整為與包含半導體晶 片2和絕緣層仏之積層構造物之彎曲彈性率大致相等，上 v -、接層6係自與编子形成面2a為相反側之裝載面％配置 至圖示下側者。f曲彈性率可依據可撓性基板1或黏接層6 之厚度或楊氏模量進行調整。 l〇573l.d0< -30- 1272747
、，1 //arj 出 fTQ 形成者，由此形成為極薄之厚度’幾乎不會對上述/ 性率產生影響。 ㈣弹 又’本實施形態之安裝基板11()中’較好的是半導體晶 片2之外側區域中’亦於與半導體晶片2之端子形成面^ 同一面之位置上，配置有安裝基板之中立面。因為若因安 裝基板上之部位不同而導致中立面位置不同，則彎曲安裝 基板時因部位不同會產生變位之大小不同，由此將益靜 得均衡之彎曲性，又亦有可能局部會 " 如圖所示，半導體晶片2之外侧區域中，可撓負^心上 積層有金屬布線4與絕緣層83，與端子形成面^為同一面 之中立面nP位於絕緣層_。因此，用以對中立面位置進 行調整之弯曲彈性率之調整，可主要藉由 調整而進行。 子良 斤述“知形態之安裝基板110具有與半導體晶 二Γ形成面2a大致—致之中立面，因此，幾乎不存 弓曲基板時之端子形成面2a之變形現象。藉此，形成為 相對於彎曲應力，半導體晶片2盥金屬布绫s φ ' 屬布線4之導電連接部 了纹付優異耐性之高可靠性的安裝基板。 (安裝基板之製造方法） :=::。5所㈣物態之⑽板"。 叫)所示準備可換性基板卜並如叫)所示 猎由液滴贺出法將液狀體喷出配置於此可换性基板】上之 J05731.doc -31 - 1272747 特疋位置處，上述液狀體將金屬微粒子分散於分散液而形 成。至於液滴噴出法，可採用喷墨法或分配器法等，尤其 噴墨法可將希望數量之液狀材料配置於希望之位置處，因 而較好。本實施形態中，使用與先前實施形態同樣之噴墨 法。 、土 本實施形態中，將使用銀微粒子作為金屬微粒子之而形 成之液狀體之液滴22，如圖6(a)所示，自液滴噴頭34處噴 出，並向可撓性基板丨上應該形成布線之處滴下，由此形 成中間構造體4b，此中間構造體4b經燒製處理後，將成為 金屬布線4。本實施形態中，此中間構造體仆係指於基板 上滴下之液狀體及此液狀體之乾燥物。喷出配置上述液狀 體時，較好的是不發生積液（膨脹），大致將液滴重量控制 為可連續噴出狀。又，亦可採用於第一次之喷出處理中間 隔噴出複數個相互不連接之液滴，並藉由第二次之後之噴 出處理將其間隔填埋的喷出方法。 士此形成金屬布線4之中間構造體4b後，以約2〇〇。〇溫度 對此加熱進行燒製處理，並燒結金屬微粒子（銀微粒子）， 如圖6(b)所示形成金屬布線4。再者，對中間構造體朴，亦 可不進行燒結金屬微粒子（銀微粒子）而形成金屬布線4之真 硬化處理’而是停留於達到蒸發掉液狀體中分散液程度I 假硬化處理。 繼而，將熱固性樹脂塗布於上述可撓性基板丨上，如圖 6(b)所示於未硬化狀態下形成黏接層‘關於塗布方法並 無特別限定’可採用滾塗法或液滴噴出法等眾所周知之塗 105731.doc -32- 1272747 布方法。本實施形態中，將黏接層6a形成於與金屬布線4 不重$之位置處，但亦可將黏接層6a形成為部分覆蓋金屬 布線4之基板中央部側之端部，此時，將成為，連接布線4 配置於介以黏接層6而連接之半導體晶片2之下側（可撓性 基板1側）。又，此構造中，若半導體晶片2之裝載面孔上 形成有連接端子，則亦可於半導體晶片2之安裝區域内， 將金屬布線4與裝載面2b側之連接端子連接。 繼而，將半導體晶片2之位置對準此未硬化狀態之黏接 層6a上，如圖6(c)所示，裝載為與黏接層以於平面上重 疊。繼而，如圖68d)所示，形成用以緩和半導體晶片2之 端子形成面2a與金屬布線4之間階差的傾斜部件9。此傾斜 部件30可使用分配器等液體材料塗布方法，塗布例如將聚 醯^胺樹脂、料性聚醯亞胺樹脂、環氧樹脂、料性環 氧树月日笨幷環丁烯（BCB : benzocyclobutene)及、聚苯幷 惡唾（PBO : polybenz〇xaz〇le)等樹脂材料而形成。 如圖所不，傾斜部件9形成為自半導體晶片2之側面向外 側而變得越來越薄’且具有自半導體晶片2之端子形成面 2a至金屬布線4之傾斜面。又，傾斜部件9亦可以不覆蓋墊 片7為限度而-部分覆上端子形成面2a。 、^而’ ^®6(e)所示，形成連接布線4c。連接布線⑽ 成為自&成於端子形成面2a上之墊片7上面經由傾斜部 件之斜面而直至金屬布線4上。此連接布線乜可使用與上 述玉屬布線4同樣之方法而形成。具體而言，> 圖6(e)所 不將包含金屬微粒子（銀微粒子）之液狀體之液滴自喷頭 105731.doc -33- 1272747 ’ 34向特定位置噴出，並選擇性地配置於基板上，之後，經 軋燥工序、燒製工序而形成金屬布線。 又，於進行上述連接布線4c之燒製處理的同時，對黏接 層6a進行硬化處理而形成黏接層6，介以此黏接層6，半導 體晶片2之裝載面2b與可撓性基板！緊密固定。之後，形成 後盍住半導體晶片2及金屬布線4之絕緣層8a，藉此獲得具 有圖5所示安裝構造之安裝基板110。 • 再者，如上所述，對金屬布線4之中間構造體4b不進行 真硬化處理而停留於假硬化處理時，藉由對連接布線钧之 燒製處理，中間構造體牦之金屬微粒子亦燒結。 製造由上述工序而獲得之安裝基板11〇時，適當選擇並 調整可撓性基板丨之材質及板厚、黏接層6之材質及膜厚、 以及半導體晶片2之板厚等，藉此可使安裳基板11〇之中立 面成為與半導體晶片2之裝載面2b大致一致。並且，獲得 之安裝基板U0中，彎曲基板時，可能會產生研磨裂^之 • &載面&中的變形幾乎消失’由此可有效防止半導體晶片 2破損’並獲得極優之可靠性。 又，採用介以連接布線4c而將金屬布線4與塾片7電性連 處理便可確保金屬布綠4盥執K 7 pj a雄~
2取偶从逆接可靠性低下的不良現象。由此，尤 接的構造，可基本上不向半導體晶片2加壓而僅進行燒製 。由此，尤其本發明 (電子零件）中超薄型 較好是應用於各種電子機器或其部件（電 105731.doc -34- 1272747 封裝之製造。 又，因通過使用有分散金屬微粒子後之液狀體的液滴噴 出法而形成上述金屬布線4及連接布線4c，故而，此等金 屬布線4及連接布線4c亦可充分薄型化，因此可進一步使 安裝構造整體薄型化。又，因可於相同裝置中進行用以形 成金屬布線4或連接布線4c之液狀體噴出處理，故而，可 提高生產性。 又，介以上述液狀體而將上述金屬布線4與上述半導體 晶片2之墊片7接合的工序之前，首先於半導體晶片2之下 側形成含有熱固性之絕緣性樹脂的黏接層6a，且藉由用以 進行連接及導通處理之液狀體之燒製處理，含有熱固性樹 脂之黏接層6a亦會同時硬化，故而，可更好地進行可撓性 基板1與半導體晶片2間之接合及封止處理，進而與藉由使 用底部填充劑而進行封止處理等情形相比，因不需要硬化 處理時間而可提高生產性。 (電子機器） 圖7(a)係表示本發明之電子機器之一例的立體圖。如圖 所不之行動電話13〇〇之框體内部或顯示部13〇1中包含使用 上述方法而獲得之安裝基板。圖巾，符號丨搬表示操作鍵 13〇2，符號1303表示聽筒，符號13〇4表示話筒。 圖（）係（a)中所示之顯示部13〇1之立體構造圖。顯示部 1301具有將安裝有電子裝置13 12之安裝基板1313連接至顯 示7板一端上而形成的構造，上述顯示面板^。包含 、頌示破置或有機EL顯示裝置。並且，此安裝基板丨3 j 3 105731.doc -35· 1272747 中，較好是利用有使用本發明之安裝方法而安裝 的安裝基板’即將電子裝置薄型安裝於安裝基板上，、因 此，可實現行動電話1300之薄型化、小型化。
上述實施形態之安裝基板並不僅限於上述行動電話，亦 可應用於電子書、個人電腦、數位靜態相機 '液晶電視、 =景器型或監視H直視型之磁帶錄景彡機、汽料航裝置、 尋呼機、電子記事本、計算器、文字處理器、工作站、電 視電活、POS端子及包含觸摸面板之機器等各種電子機器 4之電子棧器中，皆可藉由使用本發明之安装基板 而實現薄型化、小型化。又，上述實施形態之安裝基板並 不僅限於液晶裝置’較好是使用作為有機EL裝置、電聚顯 丁面板4置（PDP，Plasma Display pane卜電椠顯示面板） 及，發射顯示器（FED，field emissi〇n化㈣，場發射顯 示。α ) #光電裝置等電子機器的零件等。 【圖式簡單說明】 .圖1係帛1實施形態之安裝基板之部分剖面構造圖。 圖2係第2實施形態之安裝基板之部分剖面構造圖。 圖3(a)-(d)係表示第丨實施形態之安裝基板之製造方法的 剖面構造圖。 圖4(a)、（b)係液滴喷頭之說明圖。 圖5係第3實施形態之安裝基板之部分剖面構造園。 Θ 6(a) (e)係表示第3實施形態之安裝基板之製造方法的 剖面構造圖。 囷7(a) (^)係電子機器之一例與其所包含之顯系部的立 105731.doc -36- 1272747 體構造圖。 【主要元件符號說明】 10FD，10FU，110 安裝基板 1 可撓性基板 2 半導體晶片 2a 端子形成面 4 金屬布線（布線圖案） 4a 連接部 5 導體柱 6 黏接層 7 墊片（連接端子） 8，8a 絕緣層 9 傾斜部件 105731.doc -37-

Claims (1)

1272747 十、申請專利範圍·· 種安裝基板，其係將具有包含連接端子之端子形成面 的電子裝置安裝於可撓性基板上而形成者，上述連接端 子直接或介以導電構件而與於上述可換性基板上形成之 布線圖案電性連接，且上述端子形成面配置為與該安裝 基板之厚度方向上之中立面大致一致。 2·如睛求項1之安裝基板，其中於該安裝基板之厚度方向 上’夾住上述電子裝置之端子形成面且分別配置於兩側 之構造構件具有大致相等之彎曲彈性率。 3.如請求項2之安裝基板，其中上述電子裝置於上述端子 形成面朝向上述可撓性基板侧之狀態下而安裝，上述電 子裝置具有與上述可撓性基板及構造構件相吻合之彎曲 彈性率大致相等的彎曲彈性率，上述構造構件形成於該 可撓性基板與上述端子形成面之間。 4. 5. 如請求項3之安裝基板’其中上述布線圖案上形成有向 上述電子裝置側突出之導體柱，上述電子裝置介以環繞 上述導體柱而設置之黏接層，安裝於上述可撓性基板 上，上述電子裝置之連接端子與上述導體柱電性連接。 如請求項2之安裝基板，其中上述電子裝置於上述端子 形成面朝向與上述可撓性基板為相反側時而安裝，並且 形成有覆蓋該電子裝置之絕緣層，形成於上述電子裝置 上之絕緣層具有與上述電子裝置、上述可撓性基板:構 造構件相吻合之彎曲彈性率大致相等的彎曲彈性率，上 述構造構件設於該電子裝置與可撓性基板之間。 105731.doc 1272747 6· h 4求項5之安裝I板中上述電子裝置之側面部形 成有包含自該側面部向外側延伸之斜面部的傾斜部件， 上述連接端子與布線圖案介以連接布線而電性連接，此 連接布線抵接於上述傾斜部件之斜面部而設置。 7. 如請求項2之安裝基板’其中上述電子裝置之外側區域 中，夾住該電子裝置之端子形&面之延長面且分別配置 於兩側之該安裝基板之構造構件，具有大致相等之弯曲 彈性率。 8. 如請求項丨之安裝基板，其中上述可撓性基板上之上述 電子裝置之外側區域中，形成有覆蓋住上述布線圖案之 絕緣層。 9·如請求項8之安裝基板，纟中上述絕緣層亦形成於上述 電子裝置上。 1〇· 一種電子機器，其具有如請求項1之安裝基板。 11· -種安裝基板’其係將具有包含連接端子之端子形成面 • t電子裝置安裝於可撓性基板上而形成的安裝基板， 上述電子裝置於上述端子形成面朝向與上述可撓性基 板為相反侧時而配置，將與上述電子裝置之端子形成面 為相反側之裝載面，配置為與該安裝基板之厚度方向上 之中立面大致一致。 12. 如請求項"之安裝基板，其中於該安裝基板之厚度方向 上，夾住上述電子裝置之裝載面且分別配置於兩側之構 造構件具有大致相等之彎曲彈性率。 13. 如請求項丨丨之安裝基板，其中上述可撓性基板上之上述 105731.doc 1272747 形成有覆蓋住上述布線圖案 之 電子裝置之外側區域中 絕緣層。 其中上述絕緣層亦 形成於上述 14 ·如請求項13之安裝基板 電子裝置上。 1 5 ·如晴求項11之安裝基板，其中上 八T上述電子裝置之安裝區域 之外側區域中’夾住將上述裝載面延長而形成之面且分 別配置於兩侧之構造構件，具有大致相等之f曲彈性 率 0 •如請求項U之安裝基板’其中上述電子裝置之側面部步 成有包含自該側面部向外側延伸之斜面部的傾斜部件f 上述連接料與布線圖案介以連接布線而電性連接，此 連接布線抵接於上述傾斜部件之斜面部而設置。 .-種電子機器’其具有如請求⑽之安裝基板。 105731.doc
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