TWI271854B - Semiconductor device - Google Patents

Semiconductor device Download PDF

Info

Publication number
TWI271854B
TWI271854B TW091132546A TW91132546A TWI271854B TW I271854 B TWI271854 B TW I271854B TW 091132546 A TW091132546 A TW 091132546A TW 91132546 A TW91132546 A TW 91132546A TW I271854 B TWI271854 B TW I271854B
Authority
TW
Taiwan
Prior art keywords
crystal film
film
semiconductor device
sige
layer
Prior art date
Application number
TW091132546A
Other languages
English (en)
Chinese (zh)
Other versions
TW200403837A (en
Inventor
Kazuhiro Aihara
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW200403837A publication Critical patent/TW200403837A/zh
Application granted granted Critical
Publication of TWI271854B publication Critical patent/TWI271854B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01356—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being a Group IV material and not being silicon, e.g. Ge, SiGe or SiGeC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
TW091132546A 2002-08-21 2002-11-05 Semiconductor device TWI271854B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002240537A JP2004079887A (ja) 2002-08-21 2002-08-21 半導体装置

Publications (2)

Publication Number Publication Date
TW200403837A TW200403837A (en) 2004-03-01
TWI271854B true TWI271854B (en) 2007-01-21

Family

ID=31884521

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091132546A TWI271854B (en) 2002-08-21 2002-11-05 Semiconductor device

Country Status (5)

Country Link
US (1) US6825507B2 (https=)
JP (1) JP2004079887A (https=)
KR (1) KR100538192B1 (https=)
CN (1) CN1293644C (https=)
TW (1) TWI271854B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003063254A1 (en) * 2002-01-21 2003-07-31 Matsushita Electric Industrial Co., Ltd. Semiconductor device
US7132338B2 (en) * 2003-10-10 2006-11-07 Applied Materials, Inc. Methods to fabricate MOSFET devices using selective deposition process
DE10360874B4 (de) * 2003-12-23 2009-06-04 Infineon Technologies Ag Feldeffekttransistor mit Heteroschichtstruktur sowie zugehöriges Herstellungsverfahren
TWI463526B (zh) 2004-06-24 2014-12-01 萬國商業機器公司 改良具應力矽之ｃｍｏｓ元件的方法及以該方法製備而成的元件
US7227205B2 (en) * 2004-06-24 2007-06-05 International Business Machines Corporation Strained-silicon CMOS device and method
US7288448B2 (en) * 2004-08-24 2007-10-30 Orlowski Marius K Method and apparatus for mobility enhancement in a semiconductor device
US7335929B2 (en) * 2004-10-18 2008-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor with a strained region and method of manufacture
KR100592749B1 (ko) 2004-11-17 2006-06-26 한국전자통신연구원 실리콘과 실리콘 게르마늄 이종 구조를 가지는 고전압전계효과 트랜지스터 및 그 제조 방법
US7193279B2 (en) * 2005-01-18 2007-03-20 Intel Corporation Non-planar MOS structure with a strained channel region
US7994005B2 (en) * 2007-11-01 2011-08-09 Alpha & Omega Semiconductor, Ltd High-mobility trench MOSFETs
US9245971B2 (en) * 2013-09-27 2016-01-26 Qualcomm Incorporated Semiconductor device having high mobility channel
CN107852421B (zh) 2015-03-11 2021-02-05 法斯埃托股份有限公司 用于web api通信的系统和方法
US11985244B2 (en) 2017-12-01 2024-05-14 Fasetto, Inc. Systems and methods for improved data encryption

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05235334A (ja) 1992-02-24 1993-09-10 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタ
US5461250A (en) 1992-08-10 1995-10-24 International Business Machines Corporation SiGe thin film or SOI MOSFET and method for making the same
JPH07288323A (ja) 1994-04-19 1995-10-31 Sony Corp 絶縁ゲート型電界効果トランジスタとその製法
KR0135804B1 (ko) 1994-06-13 1998-04-24 김광호 실리콘 온 인슐레이터(soi) 트랜지스터
US6969875B2 (en) * 2000-05-26 2005-11-29 Amberwave Systems Corporation Buried channel strained silicon FET using a supply layer created through ion implantation
US6680496B1 (en) * 2002-07-08 2004-01-20 Amberwave Systems Corp. Back-biasing to populate strained layer quantum wells

Also Published As

Publication number Publication date
TW200403837A (en) 2004-03-01
KR20040018122A (ko) 2004-03-02
US20040036122A1 (en) 2004-02-26
CN1477718A (zh) 2004-02-25
JP2004079887A (ja) 2004-03-11
US6825507B2 (en) 2004-11-30
CN1293644C (zh) 2007-01-03
KR100538192B1 (ko) 2005-12-22

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MM4A Annulment or lapse of patent due to non-payment of fees