TWI266332B - Redundancy circuit in semiconductor memory device - Google Patents

Redundancy circuit in semiconductor memory device

Info

Publication number
TWI266332B
TWI266332B TW094122607A TW94122607A TWI266332B TW I266332 B TWI266332 B TW I266332B TW 094122607 A TW094122607 A TW 094122607A TW 94122607 A TW94122607 A TW 94122607A TW I266332 B TWI266332 B TW I266332B
Authority
TW
Taiwan
Prior art keywords
memory device
semiconductor memory
spare
redundancy circuit
redundant selector
Prior art date
Application number
TW094122607A
Other languages
English (en)
Other versions
TW200638427A (en
Inventor
Sang-Hee Kang
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200638427A publication Critical patent/TW200638427A/zh
Application granted granted Critical
Publication of TWI266332B publication Critical patent/TWI266332B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/838—Masking faults in memories by using spares or by reconfiguring using programmable devices with substitution of defective spares
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G11C29/787—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using a fuse hierarchy

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
TW094122607A 2005-04-29 2005-07-04 Redundancy circuit in semiconductor memory device TWI266332B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050036227A KR100716667B1 (ko) 2005-04-29 2005-04-29 반도체 기억 소자의 리던던시 회로

Publications (2)

Publication Number Publication Date
TW200638427A TW200638427A (en) 2006-11-01
TWI266332B true TWI266332B (en) 2006-11-11

Family

ID=37195387

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094122607A TWI266332B (en) 2005-04-29 2005-07-04 Redundancy circuit in semiconductor memory device

Country Status (5)

Country Link
US (2) US7257037B2 (zh)
JP (1) JP4868345B2 (zh)
KR (1) KR100716667B1 (zh)
CN (2) CN100543869C (zh)
TW (1) TWI266332B (zh)

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US7603127B2 (en) * 2001-10-12 2009-10-13 Airvana, Inc. Boosting a signal-to-interference ratio of a mobile station
US20070140218A1 (en) * 2005-12-16 2007-06-21 Nair Girish R Managing backhaul connections in radio access networks
CN101377959B (zh) * 2007-08-30 2012-01-04 晶豪科技股份有限公司 冗余位线修复的选择方法及其装置
US8112681B2 (en) * 2008-01-29 2012-02-07 Arm Limited Method and apparatus for handling fuse data for repairing faulty elements within an IC
KR101009337B1 (ko) * 2008-12-30 2011-01-19 주식회사 하이닉스반도체 반도체 메모리 장치
KR101869751B1 (ko) * 2012-04-05 2018-06-21 에스케이하이닉스 주식회사 안티 퓨즈 회로
KR20140078292A (ko) * 2012-12-17 2014-06-25 에스케이하이닉스 주식회사 퓨즈 리페어 장치 및 그 방법
KR102117633B1 (ko) * 2013-09-12 2020-06-02 에스케이하이닉스 주식회사 셀프 리페어 장치
KR102160598B1 (ko) 2014-08-05 2020-09-28 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작방법
KR20160029378A (ko) * 2014-09-05 2016-03-15 에스케이하이닉스 주식회사 반도체 장치
US9748003B2 (en) * 2014-09-12 2017-08-29 Qualcomm Incorporated Efficient coding for memory redundancy
CN104979004B (zh) * 2015-07-10 2018-12-14 北京兆易创新科技股份有限公司 资料存储型闪存优化译码使能装置
TWI658471B (zh) * 2017-05-16 2019-05-01 華邦電子股份有限公司 快閃記憶體儲存裝置及其操作方法
CN110867205B (zh) * 2018-08-27 2021-10-08 华邦电子股份有限公司 存储器装置以及存储器周边电路
KR20200106736A (ko) * 2019-03-05 2020-09-15 에스케이하이닉스 주식회사 결함구제회로
CN110095977B (zh) * 2019-04-29 2023-06-16 重庆川仪控制系统有限公司 冗余设备、主从模块判定方法、拓扑系统及通信决策方法
CN115378422B (zh) * 2022-10-20 2022-12-20 成都市硅海武林科技有限公司 一种反熔丝fpga开发者模式电路及用户编程方法

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KR0158484B1 (ko) * 1995-01-28 1999-02-01 김광호 불휘발성 반도체 메모리의 행리던던씨
KR0177407B1 (ko) * 1996-04-04 1999-04-15 문정환 리던던시 재 리페어 회로
JPH11110996A (ja) * 1997-09-30 1999-04-23 Fujitsu Ltd 半導体記憶装置
US6041000A (en) * 1998-10-30 2000-03-21 Stmicroelectronics, Inc. Initialization for fuse control
JP2001143494A (ja) * 1999-03-19 2001-05-25 Toshiba Corp 半導体記憶装置
JP3908418B2 (ja) * 1999-08-31 2007-04-25 株式会社東芝 半導体記憶装置
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JP2003045194A (ja) * 2001-07-31 2003-02-14 Sony Corp 半導体記憶装置
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KR100516735B1 (ko) * 2001-12-08 2005-09-22 주식회사 하이닉스반도체 메모리 셀 어레이 내부 배선을 이용한 로오 엑세스 정보전달 장치
DE10261571B4 (de) * 2001-12-28 2015-04-02 Samsung Electronics Co., Ltd. Halbleiterspeicherbauelement und Reparaturverfahren

Also Published As

Publication number Publication date
US20080186783A1 (en) 2008-08-07
JP4868345B2 (ja) 2012-02-01
JP2006309907A (ja) 2006-11-09
CN101510447B (zh) 2013-02-06
CN101510447A (zh) 2009-08-19
TW200638427A (en) 2006-11-01
CN100543869C (zh) 2009-09-23
KR20060114213A (ko) 2006-11-06
CN1855300A (zh) 2006-11-01
US7257037B2 (en) 2007-08-14
US20060245279A1 (en) 2006-11-02
KR100716667B1 (ko) 2007-05-09
US7602660B2 (en) 2009-10-13

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees