TWI263772B - Mura defect inspection mask, apparatus and method of inspecting the mura defect, and method of producing a photomask - Google Patents

Mura defect inspection mask, apparatus and method of inspecting the mura defect, and method of producing a photomask

Info

Publication number
TWI263772B
TWI263772B TW094117429A TW94117429A TWI263772B TW I263772 B TWI263772 B TW I263772B TW 094117429 A TW094117429 A TW 094117429A TW 94117429 A TW94117429 A TW 94117429A TW I263772 B TWI263772 B TW I263772B
Authority
TW
Taiwan
Prior art keywords
mura
mura defect
patterns
repetitive
repetitive patterns
Prior art date
Application number
TW094117429A
Other languages
English (en)
Other versions
TW200602616A (en
Inventor
Makoto Murai
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200602616A publication Critical patent/TW200602616A/zh
Application granted granted Critical
Publication of TWI263772B publication Critical patent/TWI263772B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Pathology (AREA)
  • Biochemistry (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW094117429A 2004-05-28 2005-05-27 Mura defect inspection mask, apparatus and method of inspecting the mura defect, and method of producing a photomask TWI263772B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004159765A JP4480001B2 (ja) 2004-05-28 2004-05-28 ムラ欠陥検査マスク、ムラ欠陥検査装置及び方法、並びにフォトマスクの製造方法

Publications (2)

Publication Number Publication Date
TW200602616A TW200602616A (en) 2006-01-16
TWI263772B true TWI263772B (en) 2006-10-11

Family

ID=35480202

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094117429A TWI263772B (en) 2004-05-28 2005-05-27 Mura defect inspection mask, apparatus and method of inspecting the mura defect, and method of producing a photomask

Country Status (5)

Country Link
US (1) US7538867B2 (zh)
JP (1) JP4480001B2 (zh)
KR (1) KR100677692B1 (zh)
CN (1) CN100427879C (zh)
TW (1) TWI263772B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI422816B (zh) * 2009-08-18 2014-01-11 Nuflare Technology Inc 檢查裝置
TWI450026B (zh) * 2007-07-12 2014-08-21 Applied Materials Israel Ltd 用以評估具有重複圖案之物體的方法與系統

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4583155B2 (ja) * 2004-12-13 2010-11-17 Ｈｏｙａ株式会社 欠陥検査方法及びシステム、並びにフォトマスクの製造方法
US20070174012A1 (en) * 2006-01-25 2007-07-26 Badger Karen D Method Of Determining Photomask Inspection Capabilities
JP4831607B2 (ja) * 2006-03-31 2011-12-07 Ｈｏｙａ株式会社 パターン欠陥検査方法及びフォトマスクの製造方法
JP4771871B2 (ja) * 2006-06-15 2011-09-14 Ｈｏｙａ株式会社 パターン欠陥検査方法、パターン欠陥検査用テストパターン基板、及びパターン欠陥検査装置、並びにフォトマスクの製造方法、及び表示デバイス用基板の製造方法
KR101587176B1 (ko) * 2007-04-18 2016-01-20 마이크로닉 마이데이타 에이비 무라 검출 및 계측을 위한 방법 및 장치
US7940386B1 (en) * 2007-07-13 2011-05-10 Kla-Tencor Corporation Scatterometry target employing non-periodic defect features to enhance or optimize target sensitivity to a parameter of interest
US20090199152A1 (en) * 2008-02-06 2009-08-06 Micronic Laser Systems Ab Methods and apparatuses for reducing mura effects in generated patterns
JP2010019639A (ja) * 2008-07-09 2010-01-28 Lasertec Corp ムラ検出装置及びパターン検査装置
JP5428410B2 (ja) * 2009-03-11 2014-02-26 凸版印刷株式会社 フォトマスクおよび描画精度評価方法
JP5556071B2 (ja) * 2009-07-09 2014-07-23 凸版印刷株式会社 評価用パターンを形成したフォトマスクおよびムラ検査装置の性能評価方法
JP5866912B2 (ja) * 2011-09-16 2016-02-24 凸版印刷株式会社 パターンの描画条件導出方法及びパターン描画装置
US8780097B2 (en) 2011-10-20 2014-07-15 Sharp Laboratories Of America, Inc. Newton ring mura detection system
KR102253995B1 (ko) 2013-03-12 2021-05-18 마이크로닉 아베 기계적으로 생성된 정렬 표식 방법 및 정렬 시스템
WO2014140047A2 (en) 2013-03-12 2014-09-18 Micronic Mydata AB Method and device for writing photomasks with reduced mura errors
CN104914133B (zh) * 2015-06-19 2017-12-22 合肥京东方光电科技有限公司 摩擦缺陷检测装置
CN105241638A (zh) * 2015-09-09 2016-01-13 重庆平伟光电科技有限公司 基于视觉的led模块亮度均匀性快速检测方法
CN105306843B (zh) * 2015-10-20 2018-05-25 凌云光技术集团有限责任公司 一种图像传感器的坏点处理方法及系统
KR102418581B1 (ko) 2015-10-21 2022-07-08 삼성전자주식회사 패턴 생성 방법 및 이를 수행하기 위한 패턴 발생기
CN106802523B (zh) * 2017-01-25 2019-10-29 星源电子科技(深圳)有限公司 修复液晶面板显性横向线性不良的方法
CN110416103B (zh) * 2018-04-28 2021-09-28 上海微电子装备（集团）股份有限公司 一种残胶标准片及其制备方法
CN109739072B (zh) * 2019-02-22 2021-02-09 深圳市路维光电股份有限公司 光罩曝光控制方法
CN109814328B (zh) * 2019-03-28 2022-06-10 京东方科技集团股份有限公司 虚拟掩膜板、掩膜板及其制作方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5004340A (en) * 1988-04-27 1991-04-02 Hewlett-Packard Company Calibration target for surface analysis scanner systems
JP3237928B2 (ja) * 1992-12-04 2001-12-10 株式会社東芝 パターン検査方法及び装置
US5214486A (en) * 1991-12-12 1993-05-25 Hoya Micro Mask, Inc. Monitor plate for automatic particle detection system
US5585211A (en) * 1995-02-06 1996-12-17 Firstein; Leon A. Fabrication and use of sub-micron dimensional standard
US5917935A (en) * 1995-06-13 1999-06-29 Photon Dynamics, Inc. Mura detection apparatus and method
US5898491A (en) * 1997-03-28 1999-04-27 Hitachi Electronics Engineering Co. Ltd. Surface defect test method and surface defect tester
US6154561A (en) * 1997-04-07 2000-11-28 Photon Dynamics, Inc. Method and apparatus for detecting Mura defects
JPH10300447A (ja) 1997-04-23 1998-11-13 K L Ee Akurotetsuku:Kk 表面パターンむら検出方法及び装置
US6048649A (en) * 1998-04-30 2000-04-11 International Business Machines Corporation Programmed defect mask with defects smaller than 0.1 μm
DE19948190B4 (de) * 1999-10-06 2013-05-16 GPP Chemnitz Gesellschaft für Prozeßrechnerprogrammierung mbH Anordnung zur Charakterisierung von Unregelmässigkeiten auf ebenen und transparenten Oberflächen von Gegenständen, bspw. von einer Kittschicht
WO2001041068A1 (fr) * 1999-11-29 2001-06-07 Olympus Optical Co., Ltd. Systeme de detection de defaut
JP4671573B2 (ja) * 2000-03-24 2011-04-20 オリンパス株式会社 基板搬送装置及び外観検査装置
US6482557B1 (en) * 2000-03-24 2002-11-19 Dupont Photomasks, Inc. Method and apparatus for evaluating the runability of a photomask inspection tool
US6936835B2 (en) * 2000-09-21 2005-08-30 Hitachi, Ltd. Method and its apparatus for inspecting particles or defects of a semiconductor device
JP3468755B2 (ja) * 2001-03-05 2003-11-17 石川島播磨重工業株式会社 液晶駆動基板の検査装置
JP4038356B2 (ja) * 2001-04-10 2008-01-23 株式会社日立製作所 欠陥データ解析方法及びその装置並びにレビューシステム
US7113629B2 (en) * 2001-04-11 2006-09-26 Dainippon Screen Mfg. Co., Ltd. Pattern inspecting apparatus and method
JP3971943B2 (ja) * 2002-03-26 2007-09-05 アイエスオーエー、 インク 光学的検査方法及び光学的検査システム
US7126681B1 (en) * 2002-04-23 2006-10-24 Kla-Tencor Technologies Corporation Closed region defect detection system
JP2003315284A (ja) * 2002-04-24 2003-11-06 Mitsubishi Electric Corp パターン検査装置の感度調整方法
US6850321B1 (en) * 2002-07-09 2005-02-01 Kla-Tencor Technologies Corporation Dual stage defect region identification and defect detection method and apparatus
JP4480009B2 (ja) * 2004-12-06 2010-06-16 Ｈｏｙａ株式会社 欠陥検査装置及び方法、並びにフォトマスクの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI450026B (zh) * 2007-07-12 2014-08-21 Applied Materials Israel Ltd 用以評估具有重複圖案之物體的方法與系統
TWI422816B (zh) * 2009-08-18 2014-01-11 Nuflare Technology Inc 檢查裝置

Also Published As

Publication number Publication date
TW200602616A (en) 2006-01-16
US20050280805A1 (en) 2005-12-22
US7538867B2 (en) 2009-05-26
CN100427879C (zh) 2008-10-22
CN1702429A (zh) 2005-11-30
JP4480001B2 (ja) 2010-06-16
KR20060048094A (ko) 2006-05-18
JP2005338620A (ja) 2005-12-08
KR100677692B1 (ko) 2007-02-02

Similar Documents

Publication Publication Date Title
TWI263772B (en) Mura defect inspection mask, apparatus and method of inspecting the mura defect, and method of producing a photomask
TW200746259A (en) Measuring and/or inspecting method, measuring and/or inspecting apparatus, exposure method, device manufacturing method, and device manufacturing apparatus
TW200714894A (en) Mask defect inspecting method, mask defect inspecting apparatus, and semiconductor device manufacturing method
TW200628758A (en) Method and system of inspecting mura-defect and method of fabricating photomask
TW200612089A (en) Unevenness defect inspection method and inspection device thereof
WO2000066549A3 (en) Apparatus and methods for collecting global data during a reticle inspection
TW201339742A (zh) 用於標線的時變強度圖之產生
JP2007271425A (ja) パターン欠陥検査装置、パターン欠陥検査方法、及びフォトマスクの製造方法
CN103345124A (zh) 一种准确和定量的缺陷检测确认光刻工艺窗口的方法
JP2008504553A (ja) カラーフィルタの検査方法、及びカラーフィルタの検査装置
EP1975699A3 (en) A method and system for patterning a mask layer
JP2006275714A (ja) プローブカード
JP2004363304A5 (zh)
US7763414B2 (en) Pseudo low volume reticle (PLVR) design for ASIC manufacturing
DE50304074D1 (de) Verfahren und vorrichtung zum herstellen von belichteten strukturen
JP2007164171A (ja) 後の修正のためにマスク欠陥データをフィードフォワードすることによって基板にパターンを形成する方法
US20060215146A1 (en) Exposure process and apparatus using glass photomasks
KR102533685B1 (ko) 광원장치
KR100558679B1 (ko) 액정표시장치용 노광장치 및 그것을 사용한 노광방법
US7651824B1 (en) Method for compensating critical dimension variations in photomasks
JP2001280940A (ja) ワーク表面検査装置
KR20100010696A (ko) 포토마스크 검사용 정렬 패턴을 구비하는 포토마스크 및 그제조방법
US20030194618A1 (en) Method of inspecting photo-mask
JP2003162043A5 (zh)
Shieh et al. Correlating reticle pinhole defects to wafer printability for the 90-nm node lithography using advanced RET

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees