TWI263686B - Sputtering target, optical information recording medium and manufacturing method thereof - Google Patents
Sputtering target, optical information recording medium and manufacturing method thereof Download PDFInfo
- Publication number
- TWI263686B TWI263686B TW093132542A TW93132542A TWI263686B TW I263686 B TWI263686 B TW I263686B TW 093132542 A TW093132542 A TW 093132542A TW 93132542 A TW93132542 A TW 93132542A TW I263686 B TWI263686 B TW I263686B
- Authority
- TW
- Taiwan
- Prior art keywords
- sputtering target
- oxide
- recording medium
- information recording
- layer
- Prior art date
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 16
- 230000003287 optical effect Effects 0.000 title abstract description 20
- 238000004519 manufacturing process Methods 0.000 title abstract description 10
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000002441 X-ray diffraction Methods 0.000 claims abstract description 4
- 239000011787 zinc oxide Substances 0.000 claims abstract description 4
- 239000011701 zinc Substances 0.000 claims description 16
- 239000002131 composite material Substances 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 31
- 239000000463 material Substances 0.000 abstract description 16
- 239000011241 protective layer Substances 0.000 abstract description 11
- 238000004544 sputter deposition Methods 0.000 abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052681 coesite Inorganic materials 0.000 abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 5
- 229910052682 stishovite Inorganic materials 0.000 abstract description 5
- 229910052905 tridymite Inorganic materials 0.000 abstract description 5
- 239000000470 constituent Substances 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 7
- 229910052717 sulfur Inorganic materials 0.000 description 7
- 239000011593 sulfur Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052984 zinc sulfide Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Manufacturing Optical Record Carriers (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Physical Vapour Deposition (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003394028A JP4711244B2 (ja) | 2003-11-25 | 2003-11-25 | スパッタリングターゲット |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200517509A TW200517509A (en) | 2005-06-01 |
| TWI263686B true TWI263686B (en) | 2006-10-11 |
Family
ID=34720221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093132542A TWI263686B (en) | 2003-11-25 | 2004-10-27 | Sputtering target, optical information recording medium and manufacturing method thereof |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4711244B2 (enrdf_load_stackoverflow) |
| CN (1) | CN100340698C (enrdf_load_stackoverflow) |
| TW (1) | TWI263686B (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI631089B (zh) * | 2013-04-08 | 2018-08-01 | 三菱綜合材料股份有限公司 | 氧化物濺鍍靶、其製造方法及光記錄媒體用保護膜 |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1993847B1 (en) * | 2006-03-10 | 2011-10-26 | Ricoh Company, Ltd. | Optical recording medium |
| JP4552950B2 (ja) * | 2006-03-15 | 2010-09-29 | 住友金属鉱山株式会社 | ターゲット用酸化物焼結体、その製造方法、それを用いた透明導電膜の製造方法、及び得られる透明導電膜 |
| JP4788463B2 (ja) * | 2006-04-25 | 2011-10-05 | 住友金属鉱山株式会社 | 酸化物焼結体、透明酸化物膜、ガスバリア性透明樹脂基板、ガスバリア性透明導電性樹脂基板およびフレキシブル表示素子 |
| WO2007142330A1 (ja) | 2006-06-08 | 2007-12-13 | Asahi Glass Company, Limited | 透明導電膜およびその製造方法、ならびにその製造に使用されるスパッタリングターゲット |
| JP5269501B2 (ja) * | 2008-07-08 | 2013-08-21 | 出光興産株式会社 | 酸化物焼結体及びそれからなるスパッタリングターゲット |
| KR101671543B1 (ko) | 2008-11-20 | 2016-11-01 | 이데미쓰 고산 가부시키가이샤 | ＺｎＯ-ＳｎＯ₂-Ｉｎ₂Ｏ₃계 산화물 소결체 및 비정질 투명 도전막 |
| JP5145513B2 (ja) | 2008-12-12 | 2013-02-20 | 出光興産株式会社 | 複合酸化物焼結体及びそれからなるスパッタリングターゲット |
| US20120279856A1 (en) * | 2009-10-15 | 2012-11-08 | Medvedovski Eugene | Tin Oxide Ceramic Sputtering Target and Method of Producing It |
| JP5389852B2 (ja) * | 2011-04-07 | 2014-01-15 | Ｊｘ日鉱日石金属株式会社 | 光情報記録媒体の保護膜 |
| JP5476636B2 (ja) * | 2011-05-23 | 2014-04-23 | Ｊｘ日鉱日石金属株式会社 | スパッタリングターゲットの製造方法及びスパッタリングターゲット |
| JP6212869B2 (ja) | 2012-02-06 | 2017-10-18 | 三菱マテリアル株式会社 | 酸化物スパッタリングターゲット |
| TW201422835A (zh) * | 2012-12-03 | 2014-06-16 | Solar Applied Mat Tech Corp | 濺鍍靶材及導電金屬氧化物薄膜 |
| WO2017094227A1 (ja) * | 2015-12-01 | 2017-06-08 | ソニー株式会社 | 光記録媒体 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5026672A (en) * | 1990-06-25 | 1991-06-25 | Tektronix, Inc. | Method of fabricating a sintered body containing tin oxide |
| US6534183B1 (en) * | 1998-08-31 | 2003-03-18 | Idemitsu Kosan Co., Ltd. | Target for transparent electroconductive film, transparent electroconductive material, transparent electroconductive glass, and transparent electroconductive film |
| JP4559553B2 (ja) * | 1999-03-05 | 2010-10-06 | 出光興産株式会社 | スパッタリング、エレクトロンビーム、イオンプレーティング用焼結体、透明導電ガラス及び透明導電フィルム |
| US6423161B1 (en) * | 1999-10-15 | 2002-07-23 | Honeywell International Inc. | High purity aluminum materials |
| JP4724330B2 (ja) * | 2001-09-07 | 2011-07-13 | 株式会社アルバック | 錫−アンチモン酸化物焼結体ターゲット及びその製造方法 |
-
2003
- 2003-11-25 JP JP2003394028A patent/JP4711244B2/ja not_active Expired - Lifetime
-
2004
- 2004-10-27 TW TW093132542A patent/TWI263686B/zh not_active IP Right Cessation
- 2004-11-25 CN CNB2004100962421A patent/CN100340698C/zh not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI631089B (zh) * | 2013-04-08 | 2018-08-01 | 三菱綜合材料股份有限公司 | 氧化物濺鍍靶、其製造方法及光記錄媒體用保護膜 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200517509A (en) | 2005-06-01 |
| JP2005154820A (ja) | 2005-06-16 |
| JP4711244B2 (ja) | 2011-06-29 |
| CN100340698C (zh) | 2007-10-03 |
| CN1621558A (zh) | 2005-06-01 |
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| MK4A | Expiration of patent term of an invention patent |