TWI250663B - Group-III nitride semiconductor device, production method thereof and light-emitting diode - Google Patents

Group-III nitride semiconductor device, production method thereof and light-emitting diode Download PDF

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Publication number
TWI250663B
TWI250663B TW92129083A TW92129083A TWI250663B TW I250663 B TWI250663 B TW I250663B TW 92129083 A TW92129083 A TW 92129083A TW 92129083 A TW92129083 A TW 92129083A TW I250663 B TWI250663 B TW I250663B
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TW
Taiwan
Prior art keywords
layer
nitride semiconductor
crystal
type
crystal layer
Prior art date
Application number
TW92129083A
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English (en)
Chinese (zh)
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TW200414569A (en
Inventor
Takashi Udagawa
Original Assignee
Showa Denko Kk
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Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW200414569A publication Critical patent/TW200414569A/zh
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Publication of TWI250663B publication Critical patent/TWI250663B/zh

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  • Electrodes Of Semiconductors (AREA)
TW92129083A 2002-10-22 2003-10-21 Group-III nitride semiconductor device, production method thereof and light-emitting diode TWI250663B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002306722A JP3779255B2 (ja) 2002-10-22 2002-10-22 Ｉｉｉ族窒化物半導体素子、その製造方法および発光ダイオード

Publications (2)

Publication Number Publication Date
TW200414569A TW200414569A (en) 2004-08-01
TWI250663B true TWI250663B (en) 2006-03-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW92129083A TWI250663B (en) 2002-10-22 2003-10-21 Group-III nitride semiconductor device, production method thereof and light-emitting diode

Country Status (2)

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JP (1) JP3779255B2 (ja)
TW (1) TWI250663B (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7238970B2 (en) 2003-10-30 2007-07-03 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
JP5005900B2 (ja) * 2005-09-16 2012-08-22 昭和電工株式会社 半導体素子
JP2007073732A (ja) * 2005-09-07 2007-03-22 Showa Denko Kk 化合物半導体素子
JP5005902B2 (ja) * 2005-09-26 2012-08-22 昭和電工株式会社 化合物半導体素子
US8084781B2 (en) 2005-09-07 2011-12-27 Showa Denko K.K. Compound semiconductor device
JP2007081084A (ja) * 2005-09-14 2007-03-29 Showa Denko Kk 半導体発光素子
DE112006002403T5 (de) 2005-09-07 2008-07-10 Showa Denko K.K. Verbindungshalbleiter-Bauelement
WO2007029865A1 (en) * 2005-09-07 2007-03-15 Showa Denko K.K. Compound semiconductor device
JP4700464B2 (ja) * 2005-09-30 2011-06-15 昭和電工株式会社 化合物半導体素子
JP2007073872A (ja) * 2005-09-09 2007-03-22 Showa Denko Kk 半導体素子
JP5005905B2 (ja) * 2005-10-27 2012-08-22 昭和電工株式会社 化合物半導体素子および化合物半導体素子製造方法
JP6151135B2 (ja) 2013-09-03 2017-06-21 株式会社東芝 半導体装置及びその製造方法

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Publication number Publication date
TW200414569A (en) 2004-08-01
JP3779255B2 (ja) 2006-05-24
JP2004146424A (ja) 2004-05-20

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