1244208 九、發明說明·· 【發明所屬之技術領域】 ::明係關於一種半導體裝置，尤其關於一種減少從 =二電極到單元的基極區域之距離，而實現電晶體 冋速化之半導體裝置。 【先前技術】 苓照第4圖，以npn型電晶體為例說明以往的半導體 裝置。 且 ^ 2 4(A)圖係半導體元件100的全體概要圖，第4(B) ，係第1層電極構造的俯視圖，虛線係表示第2層電極， 弟4(c)圖係第4(B)圖的c_c線剖視圖。 〃在n+型石夕半導體基板51上，例如將n型i晶層積層 等而裝設集極區域52。在集極區域52表面裝設？型雜質 品或之基極區域53 ’在基極區域53表面將n +型雜質擴散 成格子形，而形成射極區域54。藉此將基極區域53分隔 成，形’且與射極區域54交互地配置。此外，分隔成島形 者是表面上的構造，形成比射極區域54更深的基極區域 53，係於較深的區域形成—個連續的區域。 以下將藉由此種分隔成島形的基極區域5 3和該周邊 的射極區域54所形成的電晶體稱為單元，將配置有多數單 元的區域稱為動作區域5 8。 連接在基極區域53及射極區域54的基極電極及射極 電極，係分別為雙層構造。 將當作第1層的第1基極電極5 6設成島形或薄長方 316458 5 1244208 幵/、.工由δ又於第1絕緣膜2 5的策〗 極區域53接捫.... 弟1基極接觸孔BC1而與基 X 接觸。將第1射栖兩 設於第1絕緣膜25 电。係設成格子形，經由 ，54接觸。 1丨射極接觸孔EC1而與射極區域 t ^第1基極電極56及射極電極57上，設有者作 弟2層的第2其；田卞 μ 土才°屯極66及第2射極電極67，妳由士 第2絕緣膜26的第2 ^ 〇(、、，工由a又方； , 土極接觸孔（於此處未圖示）、第？ 射極制孔EC2(於此處未圖示）而連接。 弟2 基極電極66依設於所有島形的第1基極電極56 和溥長方形的第1其搞+ 4 c。 而第2射朽土〃电極56之一部分上而與該等接觸。 …电極67係設於薄長方形的第1基極電極56上 方，而與第1射極電極57接觸。 卟上 第】1°ΐ ’使第2基極電極66及第2射極電極67形成將 "極覆蓋成平板形的形狀，而引線接合在該 2电極’藉此可以擴大可進行引線接合的區域，提高組裝 用性。而且’由於第2基極電極66和第2射極電極 以各自的矩形之—邊鄰接，因此遮罩之對位偏離， 或用以獲彳于所希望的光阻圖案之間隔距離，僅考慮該部八 即可（例如參照專利文獻1)。 、“刀 (專利文獻1)曰本特開2000-40703號公報 【發明内容】 [發明所欲解決之課題] 第5圖係表示安裝上述半導體晶片丨〇〇的情形。 在組裝步驟中，如第5 (Α)圖所示，有在晶片的—個邊 316458 6 l2442〇8 (圖式令為當作晶片的 兩蠕子之情形。此時：)側配置基極β及刪的 .部端子（例如導線）2 〇 〇，和第連 /妾射；個晶片邊並排的外 極66,因此若第2層電極為二=:極67及第2基極電 '可藉由接合引線！50連接。形的琶極構造，如圖所示， 電-=。，因為此了，高雙載子電晶體的特性，係以降低射極 而予=保 次k里鈿紐接合引線等處理。 而且，尤其隨著封裝體的薄型化， 的環路之要求。此時有使引線 低接合引線 端部附近的情形，俾使較低的产如圖所示位於晶片 作」:二根據連接第1層和第2層的接觸孔之位置，當 的有第1射極電極57和第2射極電極67 置為：片二:!弟2射極電極67的1層部分。引線接合位 ^ 、、’7妾合位置的射極電阻會變高。因此，有射極 ^阻降低或晶片薄型化無法進展的問題。 口此此一化舲弟2層電極形成平板形，如第5(β)圖的 ^泉所^儘量縮短第i層的第！射極電極5 7和接合引線 316458 7 1 5 0的距離即可。而&，繁彳士 αΊ 丨』而且弟1射極電極57和第2射極電極 67係形成2層，在相對於配置有外部端子2〇〇的晶片邊（於 圖中為上邊或下邊）之垂直方向，形成第U極電極^即 可。 第5(C)圖係第5⑻圖的部分放大圖，以實線表示第1 1244208 層電=造，且以一點虛線及陰影表示第2層電極構造。 第二I::電？ 67下方的第1基極電極56係經由設於 .基極接觸孔，而與例如並排在圖中 •配置复數個基極區域53相連接並接觸。然後，在 到第2:二 域58外成束地形成梯形圖案，且延伸 觸:c=極6 6側’經由設於第2絕緣膜的第2基極接 66下方… 电極66接觸。且，於第2基極電極 6下方,又有島形的第！基極電極5 而與第2基極電極66接觸。 以2基極接觸孔 第1射極電極57係於第2射極電極 方形，於第2基極電極66下方設成格 」又成涛長 係呈i卓接，0丄 / 。亥寻之一部分 知王連接，且經由設於第2絕緣 而與第2射極電極67_。 弟2射極接觸孔EC2 以形成此種構造的方式， 2射極電極67的2層電丄 使引線接合在晶片端部 、、接3位置。亦即，即 遠的第！射極電降低Μ線接合位置到最 圖所示的接合引線之縮短化 亦達成如第5(A) 低，再者，由於可減少接合 ^助於射極電阻之降 封裝體。 、，泉々衣路而可以安裝到薄型 仁此日^在弟2射極電極6 7下方 :置騰的第丨基極電極56係於動：：:極_ 連接在弟2基極電極66。亦即，—°卜成束地 方經由第2基極接觸孔BC2 ”在乐2基極電極66下 接地與第2基極電極6 6 316458 8 1244208 連接的單元C 2的基極區域5 3相比較，例如在單元C1中， 到基極區域5 3和第2基極電極6 6的距離L 2較長。因此， 電晶體關斷時的基極區域之少數載子萃取較慢，而有成為 妨礙高速動作的原因之問題。 [用以解決課題之手段] 本發明係鑑於上述各種問題而研發者，第1，具備： 當作集極區域的一導電型半導體基體；設於前述基板上的 逆導電型基極區域；在前述基極區域表面設成格子形的一 導電型射極區域；與前述基極區域接觸的第1基極電極； 與前述射極區域接觸的第1射極電極；與在前述第1基極 電極及前述第1射極電極上隔介絕緣膜而設置的前述第1 基極電極連接的一個第2基極電極；以及與在前述第1基 極電極及前述第1射極電極上隔介前述絕緣膜而裝設且與 前述第1射極電極連接的一個第2射極電極；同時，將前 述第2射極電極下方的第1基極電極及第1射極電極並列 配置複數個，該複數個第1基極電極係於端部成束地而連 接在前述第2基極電極，而前述第2基極電極係具有突出 部，該突出部係分隔前述第2射極電極的一部分，且與前 述並列的第1基極及射極電極正交並延伸，藉由以上構成 解決上述問題。 且前述第2基極電極下方的前述第1射極電極係具有 格子形狀。 且，藉由前述突出部分隔的區域係至少具有可固設連 接在前述第2射極電極的連接手段之面積。 9 316458 1244208 第2 ’具備有：丰導曰 區域、基極區域和射基板褒設集極 的弟！基極電極、接觸在前述 域 .及在前述第1基極電極及第1射極電=二射極電極、 .置的第2基極電極及第2射朽：广電極上隔介絕緣膜而設 沿著前述半導，曰=射嘉極'極’·基極端子及射極端子， 述基極端子和前述第2 連接枝構，分別連接前 極電極；同時，Sit極及爾極端子和第2射 電極及第1射枝^ 電極下方的前述第1基極 射極电極垂直地配置在前述一邊， :::係具:突出部，該突出部係分隔前述第 的。Ρ刀’且並列延伸在前述 电位 述問題。 、猎由以上構成解決上 導體接手段係固設在沿著前述-邊的前述半 分：致:;前述突出部將前述第2射極電極的-部分 二’於料突出部下方的前述絕緣料有 ( 1基極電極接觸的接觸孔。 〃、弟 [發明之效果] 根據本發明而獲得以下之效果。 基極電極裝設突出部，且在突出部 基極接：請及第2基極接觸娜的方式， 位於：弟2基極電極較遠的位置之單元C及從 的早兀之基極區域到第2基極電極之距離。藉此， 316458 10 1244208 可加速電晶體關斷時的基 達成電晶體的高逮化。 — 數載卞的萃取，而可 大致均等的方式:::：弟'2,極，極的-部分分隔成 基極電極的距離之泠：：兀的基極區域到第2 載子的萃取時間之^ 由於亦可抑制少數 了間之不均，而有利於高速動作。 由於可引線接合在曰 體的薄型化。 接口在曰曰“心而可有助於封裝 【實施方式】 茶照第1圖到第3圖 詳述本發明之實施形態。載子電晶體為例， 表示本發明的實施形態之半導體裝置1〇的構 ()圖係表示第2層電極構造的俯視圖，第1(β) 圖係表示第1層電極構造和擴散區域的俯視圖。 域Λ實Γ「形f的ηρη型雙載子電晶體10係包含：集極區 域2、基極區域3、射極區域4、第i基極電極 極電極7、第2基極電極16、第2射極電極17、 其 極電極的突出部1 6a。 土 半導體基板1係高濃度的n +型半導體基板，於該上方 例如使η型磊晶層成長等而裝設集極區域2。 基極區域3係設於集極區域2表面的一個ρ型擴散區 域。在基極區域3表面將η +型雜質擴散成格子形而形成2 極區域4。藉此，將基極區域3分隔成圖式中的正方形壯^ 所示之島形。此外，分隔成島形的是表面上的構造，形= 316458 11 1244208 比射極區域4深的基極區域3係於較深的區域形成 續的區域。將分隔成島形的基極區域3及在其周邊 ^或4所形成的單元配置多數個，而構成以虛線所示之動 作區域8(參照第2(B)、（C)圖）。 在基極區域3及射極區域4的基極電極及射極電 極係S別形成2層構造。而雖省略同-1244208 IX. Description of the invention ... [Technical field to which the invention belongs] :: Ming is about a semiconductor device, especially a semiconductor device that reduces the distance from the two electrodes to the base region of the cell and achieves faster transistor speed. . [Prior Art] Fig. 4 illustrates a conventional semiconductor device using an npn transistor as an example. 4 (A) is an overall schematic view of the semiconductor device 100, and 4 (B) is a top view of the structure of the first layer electrode. The dotted line indicates the second layer electrode. The 4 (c) diagram is the fourth ( B) A sectional view taken along the line c_c in the figure. A collector region 52 is provided on the n + -type lithium semiconductor substrate 51 by, for example, laminating n-type i crystals and the like. Installed on the surface of the collector region 52? In the base region 53 ', the n + -type impurities are diffused into a lattice shape on the surface of the base region 53 to form an emitter region 54. Thereby, the base region 53 is partitioned into a shape 'and arranged alternately with the emitter region 54. In addition, those divided into islands are structures on the surface, forming a base region 53 which is deeper than the emitter region 54 and is connected to the deeper region to form a continuous region. Hereinafter, the transistor formed by the island region-shaped base region 53 and the surrounding emitter region 54 will be referred to as a cell, and the region in which most cells are arranged will be referred to as an operation region 58. The base electrode and the emitter electrode connected to the base region 53 and the emitter region 54 have a double-layer structure, respectively. The first base electrode 5 6 serving as the first layer is formed in an island shape or a thin rectangular shape 316458 5 1244208 、 /. The reason is that δ is connected to the first insulating film 25 and the electrode area 53 is connected. .. The base 1 contacts the hole BC1 and contacts the base X. The first insulating film is provided on the first insulating film 25. It is set in a grid shape and contacts via. 1 丨 The emitter contacts the hole EC1 and the emitter region t ^ The first base electrode 56 and the emitter electrode 57 are provided with a second layer of the second layer; Tian Tian μ Tu Cai ° tun pole 66 and the first 2 emitter electrode 67, you 2nd ^ 〇 (,,, a, and square) of the second insulating film 26, earth contact hole (not shown here), the second? Emitter hole EC2 (Not shown here). The second base electrode 66 is provided on all island-shaped first base electrodes 56 and the first rectangular base electrode + 4 c. And the second radioactive earth electrode A part of the electrode 56 is in contact with the electrodes ... The electrode 67 is provided above the thin rectangular first base electrode 56 and is in contact with the first emitter electrode 57. On the porch, the angle is 1 °. The base electrode 66 and the second emitter electrode 67 are formed to cover the "electrode" in a flat plate shape, and wire bonding is performed on the two electrodes. 'This can expand the area where wire bonding can be performed and improve the assemblability. Moreover' Because the second base electrode 66 and the second emitter electrode are adjacent to each other on one side of the rectangle, the alignment of the mask is deviated, or the separation distance used to obtain the desired photoresist pattern is only considered This part is only necessary (for example, refer to Patent Document 1). "Knife (Patent Document 1) Japanese Patent Application Publication No. 2000-40703 [Summary of the Invention] [Problems to be Solved by the Invention] Fig. 5 shows the mounting of the semiconductor described above. In the assembly step, as shown in FIG. 5 (A), there is one side of the wafer 316458 6 244420 (the pattern is regarded as the two worms of the wafer. This :) The base terminal β and the deleted. Terminal (such as a wire) 2000 are connected to the first and second terminals; the outer electrode 66 is arranged side by side on the chip, so if the second layer electrode is two =: pole 67 And the second base electrode can be connected by bonding wires! 50. The shape of the arpeggio structure is shown in the figure, and the electric-=. Because of this, the characteristics of the high-battery transistor are reduced by the emitter. = Houji kili 钿 bonding wire and other processing. Moreover, especially with the thinning of the package, the loop is required. At this time, the wire may be low bonded near the end of the lead, resulting in a lower yield such as The figure is located on the wafer. ”According to the position of the contact hole connecting the first layer and the second layer, there is a first emitter electrode 57. And the second emitter electrode 67 is set as follows: Sheet 2: The first layer of the 2nd emitter electrode 67. The emitter resistance at the wire bonding position ^, '7 coupling position will become higher. Therefore, there is an emitter ^ The problem of resistance reduction or wafer thinning cannot be progressed. In this case, the two-layer electrode is formed into a flat plate shape, as shown in Figure 5 (β) of the spring. As much as possible, the first layer of the i-th layer! Emitter electrode 5 7 The distance from the bonding wire 316458 7 1 50 is sufficient. And &, Fanshi αΊ 丨 』and the first emitter electrode 57 and the second emitter electrode 67 are formed in two layers, and the external terminal 2 In the vertical direction of the side of the wafer (top or bottom in the figure), a U-th electrode ^ may be formed. Figure 5 (C) is a partially enlarged view of Figure 5⑻. The solid line represents the 1212208th layer of electricity, and the dotted layer and a dashed line show the structure of the second layer electrode. Second I :: Electricity? The first base electrode 56 below 67 is connected to, for example, side by side in the drawing via a base contact hole provided in the figure. A plurality of base regions 53 are arranged in contact with each other. Then, a trapezoidal pattern is formed in a bundle to the outside of the second 2: second domain 58, and extended contact: c = pole 6 6 side 'via the second base electrode 66 provided on the second insulating film ... The electrode 66 contacts. And, under the second base electrode 6, there are island-shaped ones! The base electrode 5 is in contact with the second base electrode 66. With 2 base contact holes, the first emitter electrode 57 is connected to the square of the second emitter electrode, and is arranged in a grid below the second base electrode 66. It is also connected to the system with a length of 0 丄 /. One part of the Xunxun is connected to Zhiwang, and is connected to the second emitter electrode 67_ via the second insulation. The second emitter contact hole EC2 has such a structure, and the two layers of the two emitter electrodes 67 are electrically connected to each other at the end of the wafer and the three positions. That is, the farthest! The emitter current reduces the bonding position of the M wire to the shortening of the bonding wire shown in the figure as shown in FIG. 5 (A). Furthermore, the reduction in bonding can contribute to the reduction of the emitter resistance of the package. ,, can be installed on a thin core at the same time. ^ Below the second emitter electrode 6 7: Zhiteng's first base electrode 56 is in motion ::: pole_ is connected to the second base electrode 66 . That is, the grounding of the bundled place through the second base contact hole BC2 ”under the Le 2 base electrode 66 is compared with the base region 5 3 of the cell C 2 connected to the second base electrode 6 6 316458 8 1244208, For example, in the cell C1, the distance L 2 from the base region 53 and the second base electrode 66 is long. Therefore, the minority carrier extraction in the base region when the transistor is turned off is slower, which may be a hindrance. The problem of the cause of high-speed operation. [Means to solve the problem] The present invention is developed by the developer in view of the above-mentioned various problems. First, the invention includes: a conductive semiconductor substrate serving as a collector region; A conductive type base region; a conductive type emitter region provided in a grid shape on the surface of the base region; a first base electrode in contact with the base region; a first emitter electrode in contact with the emitter region; A second base electrode connected to the first base electrode provided through the first base electrode and the first emitter electrode with an insulating film interposed therebetween; and the second base electrode and the first base electrode and the first base electrode 1 Emitter electrode is installed through the aforementioned insulation film A second emitter electrode connected to the first emitter electrode; at the same time, a plurality of first base electrodes and first emitter electrodes below the second emitter electrode are arranged in parallel, and the plurality of first base electrodes The electrode is connected to the second base electrode in a bundle at an end portion, and the second base electrode system has a protruding portion that separates a part of the second emitter electrode and is parallel to the first The 1 base electrode and the emitter electrode extend orthogonally to solve the above-mentioned problem by the above configuration. The first emitter electrode system under the second base electrode has a grid shape. Further, the area separated by the protruding portion. It has at least an area that can be fixedly connected to the above-mentioned second emitter electrode. 9 316458 1244208 The second 2 is equipped with: a younger brother ’s region, a base region, and a collector of an emitter substrate! The base electrode , The contact is in the aforementioned region, and the first base electrode and the first emitter electrode are equal to the two emitter electrodes, the second base electrode and the second emitter are placed on the wide electrode through an insulating film and arranged along the With the aforementioned semiconducting, said = Shejiaji 'pole' · base extreme And the emitter terminal, the base terminal and the aforementioned second connecting branch, respectively, are connected to the front electrode; at the same time, the Sit electrode and the Er terminal and the second emitter electrode and the first emitter electrode are under the aforementioned first base electrode. The emitter electrode is arranged vertically on the aforementioned side, ::: tether: a protruding portion that separates the aforementioned .P knife 'and extends in parallel to the aforementioned potential problem. The above structure solves the upper conductor connection. The means is fixedly set on the aforementioned half-point along the aforementioned-edge: to :; the aforementioned protruding portion is-the second part of the second emitter electrode-the second insulating material below the protruding portion of the insulating material has (1 base electrode contact contact [Effects of the invention] According to the present invention, the following effects are obtained: The base electrode is provided with a protruding portion, and the protruding portion is connected to the base: Please contact the second base to contact Na, located at: Di 2 The cell C located farther from the base electrode and the distance from the early base region to the second base electrode. In this way, 316458 10 1244208 can accelerate the transistor's turn-off time and achieve higher transistor capture. — The extraction method of several carriers, and it can be roughly equal :::: brother'2, pole, pole-the distance of the partial separation of the base electrode:: extraction of the second carrier from the base region to the second carrier Time ^ is also conducive to high-speed movements because it can also suppress a small amount of unevenness. It is thinner because it can be wire-bonded. The interface can be said to be "heartful and can help in packaging. [Embodiment] Tea photo 1 to 3 details the embodiment of the present invention. A carrier transistor is taken as an example to show the semiconductor device 1 of the embodiment of the present invention. The structure () is a plan view of the electrode structure of the second layer, and the structure (1) is a plan view of the structure and diffusion region of the electrode of the first layer. The 10 series includes: a collector region 2, a base region 3, an emitter region 4, an i-th base electrode electrode 7, a second base electrode 16, a second emitter electrode 17, and a protruding portion 16a of the electrode. The earth semiconductor substrate 1 is a high-concentration n + -type semiconductor substrate, and a collector region 2 is mounted thereon, for example, an n-type epitaxial layer is grown. The base region 3 is a ρ provided on the surface of the collector region 2. Diffusion region. Η + -type impurities are diffused into a grid shape on the surface of base region 3 to form a two-pole region 4. Thereby, base region 3 is divided into an island shape shown by a square shape in the figure. , The island structure is the structure on the surface, the shape = 316458 11 1244208 deeper than the emitter region 4 The domain 3 is formed in a deeper area to form a continuous area. The island-shaped base region 3 and a plurality of cells formed on its periphery ^ or 4 are arranged to form an operation region 8 indicated by a dashed line (refer to Section 3). 2 (B), (C)). The base electrode and the emitter electrode system S of the base region 3 and the emitter region 4 have a two-layer structure. Although omitted, the same-
尨千雖名略圖不，但集極區域2 係黾性連接在集極電極。 飞Z 第2::::A)圖所示，當作第2層的第2基極電極16及 二，極Π係於第！基極電極6及第！射極電極7 ^ "第2絕緣膜分別裝設各一個 .^ 0 ^ 將弟2基極電極1 β 和弟2射極電極丨7鄰接配置，第 ψ ^ 矛z暴極電極16係具有突 出口fM6a，該突出部16a係伸 大 部分分隔成大致均等。第2射極=射極電極17的- 周圍的㈣、，#ί 17係環繞突出部16a 勺形狀，亚非稭由突出部j 6 連續的平板形。 -王地^開’而是—個 羔後，以大致均等的面積，具有例如分隔在 上側的區域和分隔在下側的區域。於本說明書中為=: 分隔區域b。此戍!二 將下側的區域稱為 個m二大σΡ 16a不限於一個，亦可為複數 。亥丨月形亦设成藉由突出部16a 等。而且，於本, ^的£域為大致均 區域3的⑴形恶中，雖然以突出部16a覆蓋基極 此· 而裝設之情形為例加以說明，但不限於 連纟，覆I複數列的形狀亦可。 分隔的第？射托帝α 措®大出部1 6a …兒極17(分隔區域a、b)，係至少具有可固 316458 12 1244208 5又接合弓丨線的面積。 如第1(B)圖所示，第]其κ + , p / 成。亦p - 土 σ兒極6係由2個圖案所槿 亦Ρ，將與島形的基極區域 ” 基極電3重-的島形圖案之第！ 兔極6a及複數個島形的基 ^ 連結，將夂* A r丄 L A d例如以縱向串聯 基極電外捆束而形成梯形圖案的第1 方。 串捆束的部分係延伸到第2基極電極16下 第2基極電極j 6下方配置 第2射極雷極"的弟1基極電極6a， 後，夂第】其士 有梯形的第1基極電極6b。铁 俊 □弟1基極電極δ係經由設於第彳^ …、 接觸孔Rn & θ # 、弟1、％緣膜的第1基極 按觸孔BC1而與基極區域3接觸。 土位 第1射極電極7亦由2個圖案構成。亦 形的第1基極電極6h門的笼旦+ 配置在梯 7 , 間的涛長方形圖案之第1射極雷搞 a 口配置在島形的第j基極電極6a間的格子安： ^卜 于形的弟1射極電極7b係連接 形的第1射極電極以之一邻八逆接在潯長方 〆 ^刀然後，各第1射極雷朽7 係經由設於第i絕緣膜Μ篦彳耵权兒極7 域4接觸。&顧的弟1射極接觸孔阳而與射極區 第2(A)圖係重疊第1(A)、⑻圖的俯視圖 2(B)圖係第2(A)圖的A_A線剖視圖，第弟 圖的B'B線剖視圖’將第2層電極以陰影表示广（A) 在第2射極電極1 7下方，j|+托ρ ^ 絕緣膜⑽第丨射㈣：二域4係經由設於第1 …/ 1射極接觸孔EC1’而連接在第1射極電極 I亚且經由設於第2絕緣膜26的 316458 13 1244208 而連接在第2射極電極17。亦即，在第2射極電極η下 方’射極區域4係經由第1及第2射極接觸孔EC1、EC2， 而大致直接地連接在第2射極電極^ 7。 而且，第2射極電極17下方的基極區域3和第丨基極 ~電極6b，係經由第ί基極接觸孔BC1而接觸，且在動作區 域8外捆束。然後，延伸到第2基極電極（6側，藉由第2 基極接觸孔BC2與第2基極電極丨6接觸。 μ另一方面在第2基極電極16下方，射極區域4係經由 弟1射極接觸孔EC1而與格子形圖案的第j射極電極几 ，觸 '然後’該第1射極電極7b係連接在薄長方形圖牵的 弟1射極電極7a，且經由帛2射極接觸孔EC^連接 2射極電極1 7。 第2基極包極1 6下方的基極區域3係經由第1 土極接觸孔BC1而與第丨基極電極6a接觸，且第1基極 ^係經由第2基極接觸孔⑽而與第2基極電極㈣ :蜀。：即，在第2基極電極16下方，基極區域3和第2 基極電極1 6係經Φ黛1 β 。, 係、，工由弟1及弟2基極接觸孔BC1、BC2而大 致直接地連接。 於本實施形態中，第2其;^ + k 。#山 基極-电極U若確保可壓設引線 接B的面積即充分（表昭第？ 刀〈一、弟3圖虛線圓形記號），第2射極 电極Π儘夏擴大其佔有面積而有助於射極電阻之降低。 再者，於本貫施形態中，在鱼、^ ^ ^ ^ ^ ^ t^6h . 仕”配置成梯形的第1基極 “壯6b及配置成缚長方形的第極電極正交的方 口衣。又延伸苐2基極電極1 6的突屮邱1 Γ ^ 丄υ日Ί大出部16a。突出部i6a 316458 14 1244208 係方；不兀全勺隔第2射極電極17的範圍内，延伸到第1 基極電極此上。然後，在突出部16a和第1基極電極讣 重疊部分的第2絕緣膜（於此處未圖示），設有第2基極接 觸孔BC2 ’並連接第2基極電極16(突出部16a)和第工基 -極電極6b。亦即，在突出部心中，基極區域3係經由^ 1及第2基極接觸孔B(n、BG2ffi7A致直接地連接在第2美 極電極1 6。 1 以如此配置之方式’配置在分隔區域a及分隔區域b 的早凡之基極區域3，較接近第2基極電極16(突出 16a)。 亦即，者眼於與第5(c)圖的情形相同的單元c ， ^ 1 ^ BC1 ^ . „ 4 2基極電極16(突出部…）的距離 匚==二電極此均等地分隔^ 電曰二: 的距離差亦整體縮小。因而，於 作。 卞取速度較快而可高速動 作為其一例，比較到單元π與最 BC2之距離日卑，士與A 处 、弟2基極接觸孔 L2縮短75^二7之距離U可較第5(C)圖的距離 ^ 75义私度，由於基極载子的萃取參此π 向速切換。 Λ丨、’因而有利於 第3圖係表示將上述半導體元件丨 形。圖式為採用導線當作外部端子之―:衣在封裝體的情 例如亦可同樣地應用在嶋絕緣 ：：限於此， |丞板裝設導電圖案的 316458 15 1244208 晶片尺寸封裝等。 如圓所示，將外部端子2〇〇例如沪 的一個曰η、真, ’口著刀偏£域b附近 们日日片邊（於圖中為晶片下邊 • 時安梦其扠Λ山7 k ^衣口又钹數個，再者，同 "土冬而子β及射極端子β俾 •端子導出日车4-- 干田1乍5亥冋一邊側的外部 ¥出日守，本貫施形態的電極構造 亦即，在分隔區域b，於虛 引接線150進行引線接合，且分別虎的位置對接合 第2基極電極16及外部端 射極電極Π、 所示固嗖接入以細， 方、本貫施形態中，如圖 口叹接合引線15〇時，相對於配 晶片1〇的—邊，垂 有夕卜口”而子200的 7。亦即，由於第1斛 缚長方形的第1射極電極 由於弟1射極電極7的大邻八在 正下方直線地延伸，因并4刀係仗接合引線150 阻增大。 17方止弟1射極電極7的輸出電 而，接合引線150為所需之最小限度的長产即可 與面積較寬的第2射極雷搞17认▲又们長度即可， 低。 ° 1 7均可有助於射極電阻之降 者由於可抑制第丨射極電極的輸出♦卩& 此可在晶片端部進行引線接▲㈣出电阻增加，因 且俨而# δ，而可女裝在薄型封裝體。 減二=線接合位置設於晶片端部的方式，可 〇.75_程度。 了將封衣肢；度溥型化到 ^隔區域a側有"端子，且 進灯引線接合時，該等效果完全相同。 一“旬 以上，於本I施形態已說明關於_型雙載子電晶 316458 16 l2442〇8 體’但pnp型亦可同樣地實施而獲得同樣的效果。 【圖式簡單說明】 . 第1 (Α)及（Β)圖係用以說明本發明的俯視圖。 • 第2圖係用以說明本發明的（Α)俯視圖、（β)剖視圖 (c)剖視圖。 第3圖係用以說明本發明的俯視圖。 第4圖係用以說明先前技術的（〇俯視圖、（Β)俯 圖、（C)剖視圖。 第5(A)至（C)圖係用以 說明先前 【主要元件符號說明】 卜51 半導體基板 2 3 基極區域 4 6、6a、 6b、56第1基極電極 7、7a、 7b、57第1射極電極 8、58 動作區域 10 、 100 16、66 弟2基極電極 16a 17、67 弟2射極電極 25 26 第2絕緣膜 52 53 基極區域 54 58 動作區域 66 150 接合引線 200 a、b 分離區域 B BC1 第1基極接觸孔 BC2 C、Π、 C2單元 E 集極區域 射極區域 突出部 第1絕緣膜 集極區域 射極區域 第2基極電極 外部端子 基極、基極端子 第2基極接觸孔 射極、射極端子 316458 17 1244208 第2射極接觸孔 > EC1 第1射極接觸孔 EC2 LI、L2 距離 316458Although Qian Qian is not named, the collector region 2 is connected to the collector electrode. Fei Z 2 :::: A) As shown in the figure, the second base electrode 16 and the second layer are regarded as the second layer, and the pole Π is connected to the second! Base electrode 6 and the first! Emitter electrode 7 ^ " Each second insulation film is provided separately. ^ 0 ^ Place the 2 base electrode 1 β and the 2 emitter electrode 7 adjacently, and the ψ ^ spear z-pole electrode 16 has The projecting opening fM6a is formed so that most of the projecting portion 16a is substantially uniformly divided. The second emitter = the emitter electrode 17-around the ㈣ ,, # ί 17 is in the shape of a spoon surrounding the protrusion 16a, and the Asian and African straw is a flat plate continuous by the protrusion j 6. -王 地 ^ 开 'but a lamb, with a substantially equal area, has, for example, a region partitioned on the upper side and a region partitioned on the lower side. In this manual, =: separates area b. In this case, the area on the lower side is referred to as m, and the largest σP 16a is not limited to one, but may be plural. The moon shape is also provided by the protruding portion 16a and the like. In addition, in the present example, the range of £ is roughly equal to the area 3. Although the protrusion 16a covers the base and the installation is described as an example, it is not limited to the flail, and it is covered by a plurality of columns. Shape is also available. Separating the first? Shooting di α Cuo® large output section 16a ... child pole 17 (separation area a, b), at least has an area that can be fixed 316458 12 1244208 5 and engage the bow line. As shown in Fig. 1 (B), the first κ +, p / is formed. Yi p-soil σ 6 is composed of 2 patterns, and will be the same as the island-shaped base region. The base is the third of the island pattern! Rabbit pole 6a and a plurality of island-shaped bases ^ Connect, for example, 丄 * A r 丄 LA d to form the first side of a trapezoidal pattern by tying the base electrodes in series in a vertical direction. The part of the string bundle extends to the second base electrode under the second base electrode 16 A second base electrode 6a of the second emitter lightning pole is arranged below j 6, and the first base electrode 6b has a trapezoid. The iron base electrode δ is provided by The first base electrode 彳 ^, the contact hole Rn & θ #, the first base, and the% edge membrane are in contact with the base region 3 by pressing the contact hole BC1. The first emitter electrode 7 at the soil level is also composed of two patterns. The shape of the first base electrode 6h gate cage + the first emitter laser of the rectangular pattern arranged in the ladder 7 and the grid arranged in the island shape between the j-th base electrode 6a of the island: ^ The first emitter electrode 7b is connected to the first emitter electrode of the shape, and the first emitter electrode is connected to the rectangle with one adjacent to the eighth. Then, each of the first emitters 7 is connected to the i-th insulation. Membrane 7 Field 4 contact. &Amp; Gu's brother 1 The emitter contacts Kong Yang and overlaps with the emitter region 2 (A) picture system 1 (A), top view 2 (B) picture system 2 (A) The cross-sectional view taken along the line A_A in the figure, and the cross-sectional view taken along the line B'B in the second figure. The second layer of the electrode is shaded. (A) Below the second emitter electrode 17, j | + 托 ρ ^ insulating film ㈣: The two-domain 4 series is connected to the first emitter electrode I via the first ... / 1 emitter contact hole EC1 ′ and is connected to the second emitter via 316458 13 1244208 provided on the second insulating film 26. Electrode 17. That is, the emitter region 4 below the second emitter electrode η is connected directly to the second emitter electrode ^ 7 through the first and second emitter contact holes EC1 and EC2. Further, The base region 3 below the second emitter electrode 17 and the base to electrode 6b are in contact with each other through the base contact hole BC1 and are bundled outside the operating region 8. Then, they extend to the second base The electrode (6 side, is in contact with the second base electrode 丨 6 through the second base contact hole BC2. Μ On the other hand, under the second base electrode 16, the emitter region 4 is through the first emitter contact hole EC1 And the j-th emitter with a grid pattern The first emitter electrode 7b is connected to the first emitter electrode 7a of the thin rectangle, and is connected to the second emitter electrode 17 via the 帛 2 emitter contact hole EC ^. 2nd base The base region 3 below the pole electrode 16 is in contact with the first base electrode 6a through the first earth electrode contact hole BC1, and the first base electrode ^ is in contact with the second base electrode through the second base contact hole ⑽. Electrode electrode: Shu .: That is, under the second base electrode 16, the base region 3 and the second base electrode 16 are φ1 β. , Department, and workers are connected directly by the base contact holes BC1 and BC2. In this embodiment, the second one is: ^ + k. # 山 基 极 -Electrode U is sufficient if the area where the lead wire B can be crimped is shown (shown in Fig. 1). The second emitter electrode Π expands its possession as soon as possible. The area contributes to the reduction of the emitter resistance. Furthermore, in this embodiment, in the fish, ^ ^ ^ ^ ^ ^ t ^ 6h. Shi "the first base electrode" Zhuang 6b "arranged in a trapezoid and the square electrode orthogonally arranged in the rectangular electrode clothes. Extending the protrusion 2 of the base electrode 16 of 屮 2 屮 ^ ^ 丄 υ Ί Ί 出 large part 16a. The protruding portion i6a 316458 14 1244208 is square; it may extend across the second emitter electrode 17 to the first base electrode. Then, a second base contact hole BC2 ′ is provided on a second insulating film (not shown here) of the overlapping portion of the protruding portion 16 a and the first base electrode 讣 and is connected to the second base electrode 16 (the protruding portion). 16a) and the first base-electrode 6b. That is, in the center of the protrusion, the base region 3 is directly connected to the second American electrode 16 through ^ 1 and the second base contact hole B (n, BG2ffi7A. 1 is arranged in such a manner that The conventional base region 3 of the partition region a and the partition region b is closer to the second base electrode 16 (protrusion 16a). That is, the person looks at the same cell c as in the case of FIG. 5 (c), ^ 1 ^ BC1 ^. „4 2 The distance between the base electrode 16 (protrusions…) 匚 == the two electrodes are equally spaced ^ Electricity 2: The distance difference is also reduced overall. Therefore, it is easy to take. The high-speed operation is an example. Comparing the distance between the unit π and the most BC2, the distance between the base and the contact hole L2 of the driver A and the brother 2 is shortened by 75 ^ 27. The distance U can be longer than the distance shown in Figure 5 (C). ^ 75 degree of privacy, because the extraction of the base carrier participates in this π-speed switching. Λ 丨, 'thus facilitates the shape of the semiconductor device shown in Figure 3. Figure 3 shows the use of wires as external terminals- : For example, when it is in a package, it can be similarly applied to 嶋 insulation :: limited to this, | 316458 15 1244208 chip with conductive pattern on the 丞 plate Dimension package, etc. As shown in the circle, place the external terminal 200 for example, one of Shanghai, η, true, 'mouth with the knife off the side of the area b. Every day, the edge of the chip (the bottom of the chip in the picture • Shi Anmengqi Fork 山 山 7 k ^ Yikou and several more, and the same as "Tongdong Erzi β and the emitter terminal β 俾 • Terminals lead out the sun car 4-- Qiantian 1 Zha 5 Hai 冋 One side of the outside ¥ In Nishou, the electrode structure of this embodiment is wire bonding at the dummy lead line 150 in the partition area b, and the second base electrode 16 and the outer end emitter electrode Π, are connected to each other at the positions of the tigers. In the solid, square, and intact embodiment, as shown in the figure, when the bonding wire 15 is sighed, as compared to the side of the chip 10, there is a Xibukou "and 7 of the sub 200. That is, Since the first emitter electrode of the first bound rectangle has a straight line extending directly below the eighth electrode of the first emitter electrode 7, the resistance of the four-knife bond wire 150 increases. 17 方 止 弟 1 射The output of the electrode electrode 7 is the minimum length required for the bonding wire 150, which can be recognized with the second emitter laser with a wide area. Yes, low. ° 1 7 can help reduce the emitter resistance. It can suppress the output of the emitter electrode. 卩 卩 & This can be used to wire the chip end. ㈣ ㈣ The resistance increases, and And # δ, and women's clothing can be in a thin package. Minus two = The way the wire bonding position is set at the end of the chip can be about .75_ degree. The sealing limb is shaped to the side of the ^ septum area. There are " terminals, and these effects are exactly the same when wire-bonding into the lamp. For more than ten years, it has been explained in this embodiment that the _ type bipolar transistor 316458 16 l2442〇8 body, but pnp type can also The same effect is obtained by implementing the same. [Brief Description of the Drawings]. Figures 1 (A) and (B) are top views illustrating the present invention. • Figure 2 is a (A) plan view, (β) sectional view, and (c) sectional view for explaining the present invention. Fig. 3 is a plan view for explaining the present invention. Fig. 4 is a plan view (0 top view, (B) top view, and (C) cross-sectional view for explaining the prior art. Figs. 5 (A) to (C) are for explaining the previous [Description of Symbols of Major Components] 51 2 3 Base area 4 6, 6a, 6b, 56 First base electrode 7, 7a, 7b, 57 First emitter electrode 8, 58 Operating area 10, 100 16, 66 Second base electrode 16a 17, 67 2 emitter electrode 25 26 2nd insulating film 52 53 base region 54 58 action area 66 150 bond wire 200 a, b separation area B BC1 1st base contact hole BC2 C, Π, C2 unit E collector area emission Pole area protrusion 1st insulating film collector area emitter area 2nd base electrode external terminal base, base terminal 2nd base contact hole emitter, emitter terminal 316458 17 1244208 2nd emitter contact hole > EC1 1st emitter contact hole EC2 LI, L2 distance 316458