TWI237909B - Thin-film semiconductor component and its production method - Google Patents

Thin-film semiconductor component and its production method Download PDF

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Publication number
TWI237909B
TWI237909B TW093101964A TW93101964A TWI237909B TW I237909 B TWI237909 B TW I237909B TW 093101964 A TW093101964 A TW 093101964A TW 93101964 A TW93101964 A TW 93101964A TW I237909 B TWI237909 B TW I237909B
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Taiwan
Prior art keywords
semiconductor body
carrier
thin
film semiconductor
substrate
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TW093101964A
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English (en)
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TW200417063A (en
Inventor
Andreas Ploessl
Peter Stauss
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Osram Opto Semiconductors Gmbh
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Priority claimed from DE10303978A external-priority patent/DE10303978A1/de
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200417063A publication Critical patent/TW200417063A/zh
Application granted granted Critical
Publication of TWI237909B publication Critical patent/TWI237909B/zh

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Description

1237909 * 玖、發明說明： 【發明所屬之技術領域】 本發明涉及一種依據申請專利範圍第1項前言之半導體 組件以及一種依據申請專利範圍第1 3項前言之該組件之製 造方法。 上述形式之半導體組件含有一種薄膜半導體本體和一種 載體，其上固定著該半導體本體。 【先前技術】 薄膜半導體本體例如已用在薄膜發光二極體晶片形式之 光電組件中。一種薄膜發光二極體晶片之特徵特別是以下 各點： -在產生輻射之磊晶層序列之面向載體元件之第一主面上 施加或形成一種反射層，其使該磊晶層序列中所產生之電 磁輻射之至少一部份反射回到該層序列中； -薄膜發光二極體晶片很類似於Lam be r tic表面輻射器； -該磊晶層序列之厚度是在2 〇 u m之範圍中或更小，特別 是在10 um之範圍中； -該磊晶層序列含有至少一種半導體層，其至少一面含有 一種混合結構’其在理想情況下使光在磊晶層序列中造成 一種類似於ergodlc之分佈，即，其具有一種儘可能erg〇dlc 之隨機雜散特性。 薄膜發光二極體晶片之基本原理例如已描述在I. Schnitzer et al., Appl. Phys. Lett. 63 (16), 18 October 1993, 2 1 7 4 - 2 ] 7 6中’其所揭示之內容此處作爲參考。須指出：本 1237909 發明特別是涉及薄膜發光二極體晶片，但本發明不限於 此。反之，本發明除了薄膜發光二極體晶片之外亦可適用 於其它之薄膜半導體本體。 爲了製成薄膜半導體本體，首先在一適當之基板上製成 一種半導體層，然後與載體相連且又由基板分離。藉由載 體與其上所配置之半導體層之劃分（例如，切鋸），則可形成 多個半導體本體，其分別固定在相對應之載體上。 此處重要的是：製成該半導體層所用之基板由該半導體 層分離且未同時用作該組件中之載體。 該方法所具有之優點是：可使用不同之材料於該基板和 載體中。各別之材料在半導體層製造時（一方面）且在操作條 件（另一方面）下可廣泛地以互相獨立之方式適應於不同之 需求。因此，該載體可對應於機械性，熱性和光學特性而 被最佳化，另可對應於半導體層製造時之各種需求來選取 該基板。 特別是半導體層之磊晶製造可對該磊晶基板設定十分特 殊之需求。例如，該磊晶基板和其上所施加之半導體層之 晶格常數須互相調整。此外，該基板須承受各種磊晶條件， 特別是溫度超過1 000QC，且適合用於相關之半導體材料之 儘可能均勻之層之生長過程中。 就該半導體本體之進一步加工和操作而言，載體之其它 特性（例如，電性和導熱性以及輻射穿透性）在光電組件中成 爲注意之中心。適用於嘉晶基板之材料通常只能有條件地 在該組件中用作載體。最後，特別是在較貴之磊晶基板（例 1237909 如，碳化矽基板）中可多次地使用該基板，這樣是値得追求的。 ”半導體層由磊晶基板分開”例如可藉由雷射束來對該半 導體-基板-界面進行照射來達成。該雷射束在該界面之附近 中被吸收且在該處可使該半導體材料溫度升高直至分解爲 止。此種方法例如由文件W ◦ 9 8 / 1 4 9 8 6中已爲人所知。就 GaN -層和GalnN -層由一種藍寶石基板中分離所用之方法而 言，通常使用一種連接狀況良好之N d : Y A G -雷射（其波長是 3 5 5 n m)之三倍頻率之輻射。雷射束經由該透明之藍寶石基 板而入射至半導體層且在藍寶石基板和該GaN -半導體層之 間之接面上於大約1 00 nm厚之界面層中被吸收。在界面上 因此會達成高的溫度，使GaN-界面層分解，且使半導體層 和基板之間之鍵結分開。 傳統方法中通常使用一種砷化鎵-基板（G a A s -基板）作爲 載體。當然在加工時（例如，在切鋸時）有毒之含砷之廢物會 由GaAs-基板掉落，其需要一種相對應之昂貴之去除過程。 因此’ GaAs-基板必須具有一種確定之厚度，以確保在上述 製造方法中有一種足夠之機械穩定性。於是在施加半導體 層且使該磊晶基板分離之後一種薄化過程（例如，載體之硏 磨）是需要的，這樣會使製程中之費用增高且使載體中發生 斷裂之危險性增高。 【發明內容】 本發明之目的是提供上述形式之薄膜組件，其具有已改 良之載體。特別是在技術上能儘可能簡單且成本有利地製 成。此外’本發明亦提供一種相對應之製造方法。 1237909 第11項之製 :申請專利範 導體本體之 較佳是使用 9 〇 導體本體， 基板（其上原 該薄膜半導 種焊接連接 可負載性及 外之費用即 導電性連接 很多，其中 整個費用因 穩定性，其 作硏磨以達 本上有利很 焊接在錯載 ;，可達成一 上述目的是以申請專利fe S弟i項之組件和 造方法來達成。本發明有利之其它形式描述宅 圍各附屬項中。 本發明之設計方式是：形成一種具有薄膜半 半導體組件，其配置在一種含有鍺之載體上。 鍺-基板作爲載體。該載體以下簡稱爲，，鍺載體， 本發明中薄膜半導體本體是一種無基板之半 即，一種以磊晶方式製成之半導體本體。嘉晶 來生長著半導體本體）由該半導體本體去除。 半導體本體例如黏合在鍺載體上。較佳是在 體本體和該載體之間形成一種焊接連接區。此 區較黏合連接區而言通常具有一種較高的溫度 較佳之導熱性。此外，藉由焊接連接時不需額 可在載體和半導體基板之間達成一種良好之 區，其同時可用作半導體本體之接觸區。 相對於含砷之載體而言，鍺載體之加工簡單 特別是不會發生有毒之含砷之廢物。製程中之 此可下降。此外，鍺載體之特徵是較高的機械 允許使用薄的載體且特別是隨後不必對該載體 成薄化作用。最後，鍺載體較GaAs-載體在成 多。 在本發明之其它外觀中，該薄膜半導體本體 體上。較佳是形成一種金-鍺-焊接連接區。因此 種耐溫之良好之導熱、導電之固定之連接區。由於所形成 1237909 之金-鍺-焊接連接區之熔化溫度通常較已製 (例如，焊接）在電路板上時所產生之溫度還擇 不必擔心半導體本體由載體分離。 本發明特別適用於以III-V-化合物半導體 本體，特別是化合物 AUGahAs，0 S X S 1， In.ASyGai^.yP, I n x A1 y G a j. x. y A s, In.AlyGaj^.yN YS 1，0€ x + y$ 1 以及 InxGa^xAsuNy，0$ 就上述氮化物半導體Ii^AlyGamN之磊晶 常使用藍寶石基板或碳化矽基板。一方面由 是電性絕緣的且因此不會造成垂直導電之組 一方面碳化矽基板較貴以及易脆而需要較昂 以氮化物爲主之半導體本體進一步加工成薄 (因此，不必磊晶基板）時特別有利。 在本發明之具有薄膜半導體本體之半導體 法中，首先在基板上生長薄膜半導體本體， 之遠離該基板之此側上施加一種鍺載體（例女[ 然後使該薄膜半導體本體由基板分離。 較佳是使該薄膜半導體本體焊接在載體上 體上和該薄膜半導體本體上分別在化合物側 層。然後使各金層相接觸，其中須選取壓力 成一種金-鍺-熔化物，其在形成金-鍺-共晶體 方式是該金層亦可只施加在該載體上或該薄 上。亦可施加金··鍺-合金以取代金層。由於 鍺，則一方面可防止合金問題（例如，發生於 成之組件安裝 S，則在安裝時 爲主之半導體 Ir^AlyGah.yP， ,0 ^ X ^ 1, 〇 ^ ;1, 0$ y S 1。 製造而言，通 於藍寶石基板 件構造，且另 貴之加工，則 膜半導體本體 組件之製造方 然後在該載體 1 ’錯-晶圓）且 。例如，在載 上施加一種金 和溫度，使形 時凝固。另一 膜半導體本體 載體本身含有 G a A s -基板中 1237909 者），且另一方面就金-鍺-熔化物而言該鍺載體是一種鍺-儲 存區，其可輕易地形成共晶體。 本發明中該基板藉由硏磨或蝕刻而被剝蝕，較佳是組合 這些步驟，使該基板首先被硏磨至一薄之殘餘層，且隨後
對該殘餘層進行蝕刻。蝕刻方法特別適用於以Ii^AUGaj x yP，InxAsyGa】_x_yP爲主之半導體層，其生長在一種GaAs-磊 晶基板上。適當之方式是藉由蝕刻停止劑來調整該蝕刻深 度，使 GaAs-磊晶基板被蝕刻直至以InxAiyGai x yP， Ir^ASyGabx.yP爲主之半導體層爲主。
在該以氮化物半導體爲主之半導體層中較佳是藉由雷射 照射使基板分離。因此以雷射束經由該基板來照射該基板_ 半導體-界面。該輻射在半導體層和基板之間之界面之周圍 中被吸收且在該處造成溫度升高直至半導體材料分解爲 止，其中該基板由半導體層中分離。較佳是使用一種連接 情況良好之N d : Y A G雷射（其具有三倍頻率之功能）或準分子 雷射，其例如在紫外線光譜區中發射。爲了達成所需之強 度，則以脈波來操作該準分子雷射是適當的。通常該脈衝 周期小於或等於1 0 n s時是有利的。 【實施方式】 本發明之其它特徵，優點以下將依據第1至3圖中之實施 例來描述。 相同或作用相同之元件在各圖中以相同之參考符號來表 示。 第1圖中所示之半導體元件具有一種鍺基板形式之載體 -10- 1237909 4，其上藉由一種焊接層5而固定一種薄膜半導體本體2。 該薄膜半導體本體2較佳是包含多個半導體層，其首先生 長在一種嘉晶基板（未顯不）上，其在該半導體本體施加在載 體4上之後去除。 薄膜組件特別適用於發出輻射之半導體本體，此乃因所 產生之輻射不會被吸收且因此可使磊晶基板中之輻射效益 不會下降。例如，半導體層能以輻射產生用之pn-接面（其 另外可含有一種單一-或多重量子井結構）之形式而配置 著。 本發明中在薄膜半導體本體之輻射產生用之層和鍺載體 之間較佳是配置一種鏡面層。該層使鍺載體之方向中所發 出之輻射成份被反射且因此使輻射效益提高。更好之情況 是該鏡面層以金屬層構成，其特別是可配置在由焊接連接 區所形成之層和該薄膜半導體本體之間。高反射之鏡面例 如可以下述方式形成··在薄膜半導體本體上首先配置一種 介電質層且然後配置一種較佳是金屬之鏡面層，其中該鏡 面層之一部份被中斷以適當地形成該薄膜半導體本體之電 性接觸區。 本發明中有利之方式是同樣可採用以G a A s作爲載體材料 時所用之傳統組件和方法，其中本發明使用鍺載體以取代 GaAs-載體。由於鍺之熱膨脹係數類似於砷化鎵之熱膨脹係 數，則在製程時通常不需額外之費用即能以鍺基板來取代 傳統之G a A s -基板而不會使組件特性劣化。反之，鍺之特徵 是較砷化鎵有更高之導熱性。 1237909 如上所述，鍺基板由於其較小之價格，較容易之可處理 性和較局之機械穩定性而更有利。例如，厚度大於6 0 0 u 111 之GaAs-基板能以厚度200 um之鍺基板來取代，其中該基 板隨後不必被薄化。 此外，就焊接連接區5而言鍺是有利的，此乃因在砷化 鎵中可防止各種與金-鍺-金屬層有關之合金問題。
第2圖所示之方法之第一步驟第2a圖中，在該基板1上 施加半導體本體2。特別是半導體本體2例如亦具有多個以 InxAlyGamP爲主之單一層，其依序生長在基板1上。 在下一*步驟弟2 b圖中，半導體本體2在遠離基板之此側 上設有金屬層3 a。較佳是蒸鍍一種金層。
又，設有鍺載體4，其上以相對應之方式施加一金屬層 3b(較佳同樣是金層）。該金屬層3a，3b—方面用來在半導體 本體2和基板1之間形成一焊接連接區且另一方面形成一 導電性良好之歐姆接觸區。亦可選擇性地在金屬層3a，3b 之一之上塗佈金-銻-層3c，其中銻作爲該即將形成之接觸區 之η-摻雜物質。亦可使用砷或磷作爲摻雜物質以取代銻。 另一方式是亦可形成一種ρ -接觸區，其例如具有銘-，鎵_ 或銦摻雜物質。 本發明中亦可只使用金屬層3a或3b，其施加在半導體本 體2上或鍺載體4上。 下一步驟第2c圖中，鍺載體4和基板1以半導體本體2 來相接合，其中須選取溫度和壓力，使金屬層3 a，3 b，3 c熔 合且隨後凝固成焊接連接區。較佳是首先形成一種金~鍺_ -12- 1237909 熔合物，其在冷卻時可形成一種銻-摻雜之金-鍺-共晶體以 作爲焊接連接區。有利的方式是亦能以此種熔合物來包封 (調節）各凸出物和其它之與一平面相偏離之表面形式，使其 不同於一與平面平行之熔合物前端。例如，半導體本體之 表面上之微粒由熔合物所包封且埋入至焊接連接區中。 在最後之步驟第2d圖中對基板1進行剝蝕。例如，該基 板1首先硏磨成一種薄的殘餘層且隨後使該殘餘層被蝕刻 而去除。留下一種薄膜半導體本體2，其焊接在一種鍺載體 4上。如上所示，本方法對 GaAs-磊晶基板上之以 InxAlyGamP爲主之半導體本體特別有利。 在第3圖所示之實施例中，其與第2圖所示之實施例之不 同處是該基板藉由雷射分離方法而取出。 在第3a圖之第一步驟中，在基板1上生長一種半導體本 體2(其較佳是以氮化物半導體爲主）。該半導體本體2在前 述之實施例中可包含多個單一層且形成一輻射產生用之半 導體本體。就磊晶和氮化物半導體之晶格調整以及雷射分 離方法而言一種藍寶石基板適合用作基板1。 在半導體本體之表面上施加一種金屬層3,較佳是一種金 層（第3b圖），且然後該半導體本體與鍺載體4相焊接（第3c 圖）。該焊接連接區5依據先前之實施例而形成。另一方式 是亦可如該處所述而設有二種金層，其一方面施加在載體 上且另一方面施加在半導體本體上。 在下一步驟第3 d圖中，經由該基板1以雷射束6來照射 該半導體層2。該輻射能量主要是在靠近半導體層2和基板 -13- 1237909 1之間之界面上在半導體層2中被吸收且在該界面上使材米斗 分解，該基板1然後被取出。 有利的方式是由於材料分解所產生之強大之機械負載自 該焊接層所吸收，使數微米厚之半導體層可由該基板分離 而不會受損。 具有三倍頻功能之準分子雷射，特別是XeF-準分子雷射 或連接狀況良好之Nd:YAG-雷射作爲輻射源時是有利的。
該雷射輻射較佳是藉由適當之透鏡經由基板而聚焦在半 導體層2上，使半導體表面上之能量密度介於100 ml/cm2 和 1000 mJ/cm2 之間，較佳是介於 200 mJ/cm2 和 800 mJ/cm2 之間。該基板1可由半導體本體取出而不會有殘渣（第3e 圖）。此種分離方式可有利地重新使用該基板作爲磊晶層。
本發明依據上述各實施例所作之描述當然不是對本發明 之一種限制。反之，本發明中各別實施例之外觀可廣泛地 互相自由地組合。此外，本發明包含每一新的特徵和各特 徵之每一組合，這特別是包含各申請專利範圍中各特徵之 每一種組合，當該組合未明顯地顯示在各申請專利範圍中 時亦同。 【圖式簡單說明】 第1圖 本發明之半導體組件之實施例之圖解。 第2 a至2 d圖 本發明中依據4個中間步驟所形成之製造 方法之第一實施例。 第3 a至3 e圖 本發明中依據5個中間步驟所形成之製造 方法之第二實施例。 -14- 1237909 主要元件之符號表： 1 基板 2 半導體本體 3a, 3b, 3c 金屬層 4 載體 5 焊接層
-15-

Claims (1)

1237909 拾、申請專利範圍： i .一種具有薄膜半導體本體（2)之半導體組件，其配置在一 載體（4)上’其特徵爲：該載體（4)含有鍺。 2·如申請專利範圍第1項之半導體組件，其中薄膜半導體 本體（2)焊接在載體（4)上。 3 ·如申請專利範圍第1或2項之半導體組件，其中薄膜半 導體本體（2)藉由含金之焊劑而焊接在載體（4)上。 4 ·如申請專利範圍第1至3項中任一項之半導體組件，其 中薄膜半導體本體（2)包含多個單一層。 5 ·如申請專利範圍第1至4項中任一項之半導體組件，其 中薄膜半導體本體（2)或至少一單一層含有一種III-V-化 合物半導體。 6 ·如申請專利範圍第5項之半導體組件，其中薄膜半導體 本體（2)或至少一單一層含有inxAlyGa1.x.yP，0SxSl, 0 gy^l，OSx + y^l。 7 ·如申請專利範圍第5項之半導體組件，其中薄膜半導體 本體（2)或至少一單一層含有inxASyGa^.yP，OSxSl，〇 $ y $ 1，0 S x + y S 1。 8 ·如申請專利範圍第5項之半導體組件，其中薄膜半導體 本體（2)或至少一單一層含有ir^AiyGaLyAs，OSxSl, 0 卜 〇Sx + ySl 或 InxGahXAs"Ny，0$xSl，0SyS：l。 9 .如申請專利範圍第5項之半導體組件，其中薄膜半導體 本體（2)或至少一單一層含有氮化物半導體，特別是 InxAlyGa^x.yN，OSxS 1，1，〇Sx + yS 1。 -16 - 1237909 1 0.如申請專利範圍第1至9項中任一項之半導體組件，其 中薄膜半導體本體（2)具有一種發出輻射之活性層。 1 1 ·如申請專利範圍第1至1 〇項中任一項之半導體組件，其 中在薄膜半導體本體（2)和載體（4)之間配置一種鏡面 層，較佳是一種金屬鏡面層。 1 2.如申請專利範圍第1 1項之半導體組件，其中在薄膜半導 體本體（2)和鏡面層之間至少一部份配置一種介電質層。 1 3>厂種具有薄膜半導體本體（2)之半導體組件之製造方 ~法，該薄膜半導體本體（2)配置在載體（4)上，其具有以下 各步驟： a) 在基板上生長該薄膜半導體本體， b) 在該薄膜半導體本體（2)之遠離該基板（1)之此側上施 加該載體（4)， c) 使該薄膜半導體本體（2)由基板分離， 其特徵爲：該載體（4)含有鍺。 1 4 .如申請專利範圍第1 3項之製造方法，其中步驟c)中對該 基板進行剝蝕，特別是硏磨及/或蝕刻。 1 5 ·如申請專利範圍第1 3項之製造方法，其中步驟c)中該半 導體本體藉由雷射幅射而由基板（1)分離。 1 6 ·如申請專利範圍第1 3至1 5項中任一項之製造方法，其 中步驟b)中對該載體進行焊接。 1 7 ·如申請專利範圍第1 3至1 6項中任一項之製造方法，其 中該薄膜半導體本體（2)之面向該載體之此側上及/或該 載體之面向該薄膜半導體本體（2)之此側上配置〜種金層 -17- 1237909 (3，3 a，3 b)，其在步驟b)中焊接該載體時至少一部 成一種含金和鍺之熔合物。 1 8 .如申請專利範圍第1 3至1 7項中任一項之製造方法 中步驟b)中該薄膜半導體本體（2)之面向該載體之此 及/或該載體之面向該薄膜半導體本體（2)之此側上 一種含金和鍺之層。 1 9 ·如申§靑專利車B 13弟1 3至1 8項中任一項之製造方法 中該半導體組件係依據申請專利範圍第1至1 2項中 項而製成。 20 ·如申請專利範圍第1至1 2項中任一項之半導體組件 申請專利@弟1 3至1 9項中任一項之製造方法， 該半導體組件是一種發出光束之二極體，特別是發 極體或雷射二極體。 份形 ，其 側上 施加 ，其 任一 或如 其中 光二
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KR20050122200A (ko) 2005-12-28
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CN1745458A (zh) 2006-03-08
KR20110010839A (ko) 2011-02-07
JP2006518102A (ja) 2006-08-03
US20060180804A1 (en) 2006-08-17
EP1588409A1 (de) 2005-10-26
KR101058302B1 (ko) 2011-08-22
WO2004068567A1 (de) 2004-08-12
TW200417063A (en) 2004-09-01

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