JP5032130B2 - 電流拡散構造を有する薄膜led - Google Patents
電流拡散構造を有する薄膜led Download PDFInfo
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- JP5032130B2 JP5032130B2 JP2006549861A JP2006549861A JP5032130B2 JP 5032130 B2 JP5032130 B2 JP 5032130B2 JP 2006549861 A JP2006549861 A JP 2006549861A JP 2006549861 A JP2006549861 A JP 2006549861A JP 5032130 B2 JP5032130 B2 JP 5032130B2
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- 239000010409 thin film Substances 0.000 title claims description 58
- 238000009792 diffusion process Methods 0.000 title claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 128
- 239000000463 material Substances 0.000 claims description 83
- 229910017464 nitrogen compound Inorganic materials 0.000 claims description 68
- 150000002830 nitrogen compounds Chemical class 0.000 claims description 68
- 230000007480 spreading Effects 0.000 claims description 39
- 238000003892 spreading Methods 0.000 claims description 39
- 239000002019 doping agent Substances 0.000 claims description 13
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 241
- 229910002704 AlGaN Inorganic materials 0.000 description 16
- 238000010586 diagram Methods 0.000 description 9
- 238000009826 distribution Methods 0.000 description 8
- 239000004047 hole gas Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 6
- 238000000407 epitaxy Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 230000003993 interaction Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910018885 Pt—Au Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000013139 quantization Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Luminescent Compositions (AREA)
Description
−ビームを形成するエピタキシ層列において支持体側の主面には反射層(ミラー層)が被着または形成されており、この反射層は少なくとも部分的にエピタキシ層列内で形成された電磁ビームをこのエピタキシ層列へと逆反射させる。
−エピタキシ層列は20μmまたはそれ以下の範囲、殊に約6μmの厚さを有する。
−エピタキシ層列は混合構造を有する少なくとも1つの面を備えた少なくとも1つの半導体層を包含し、理想的な場合にはこの面によりエピタキシ層列内にほぼエルゴード的な光分布を生じさせ、つまりこの光分布はできるかぎりエルゴード的な確率分散特性を有する。
ここで、
図1Aは本発明の第1の実施例による薄膜LEDの概略的な断面図を示し、
図1Bは本発明の第1の実施例による薄膜LEDの概略的な俯瞰図を示し、
図2Aは本発明の第2の実施例による薄膜LEDの概略的な断面図を示し、
図2Bは本発明の第2の実施例による薄膜LEDの概略的な俯瞰図を示し、
図3Aおよび3Bは、第2の半導体材料からなる比較的大きい電子的なバンドギャップを有するn型にドープされた層が埋め込まれているn型にドープされた半導体層の電子的なバンド構造の概略図を示し、
図4は、図2に示された半導体層のドーパント濃度の経過の概略図を示し、
図5は、比較的大きい電子的なバンドギャップを有する第2の半導体材料からなる複数の半導体層が埋め込まれている半導体層のバンドモデルの概略図を示し、
図6は、比較的大きい電子的なバンドギャップを有する第2の半導体材料からなるp型にドープされた半導体層が埋め込まれているp型にドープされた半導体層の価電子帯の経過の概略図を示し、
図7Aおよび7Bは、比較的大きい電子的なバンドギャップを有する第2の半導体材料からなるn型にドープされた半導体層が埋め込まれているp型にドープされた半導体層のバンドモデルの概略図を示す。
Claims (16)
- 電磁ビーム(19)を主ビーム方向(15)に放射するアクティブ層(7)と、前記主ビーム方向(15)において前記アクティブ層(7)の出射側に配置されている第1の窒素化合物半導体材料からなる電流拡散層(9)と、前記主ビーム方向(15)に放射された前記ビーム(19)を出力する主面(14)と、前記主面(14)上に配置されている第1のコンタクト層(11,12,13)とを備えた薄膜LEDにおいて、
前記電流拡散層(9)の横方向導電性が二次元の電子ガスの形成により高められており、
前記電流拡散層(9)において二次元の電子ガスを形成するために、第1の窒素化合物半導体材料よりも大きい電子的なバンドギャップを有する第2の窒素化合物半導体材料からなる少なくとも1つの層(10)が前記電流拡散層(9)に埋め込まれており、前記第1の窒素化合物半導体材料および前記第2の窒素化合物半導体材料はそれぞれn型にドープされており、
前記第2の窒素化合物半導体材料からなる前記少なくとも1つの層(10)はドーパントを有し、前記電流拡散層(9)に接する領域におけるドーパント濃度は前記少なくとも1つの層(10)の中央領域におけるドーパント濃度よりも高く、
前記少なくとも1つの層(10)は20nmから100nmの厚さを有することを特徴とする、薄膜LED。 - 前記第2の窒素化合物半導体材料からなる複数の層(10a,10b,10c)が前記電流拡散層(9)に埋め込まれている、請求項1記載の薄膜LED。
- 前記第2の窒素化合物半導体材料からなる複数の層(10a,10b,10c)の数は1から5である、請求項1または2記載の薄膜LED。
- 前記第1の窒素化合物半導体材料はGaNである、請求項1から3までのいずれか1項記載の薄膜LED。
- 前記第2の窒素化合物半導体材料はAlxGa1-xN、ただし0.1≦x≦0.2、である、請求項1から4までのいずれか1項記載の薄膜LED。
- 前記アクティブ層(7)はInxAlyGa1-x-yN、ただし0≦x≦1、0≦y≦1かつx+y≦1、を有する、請求項1から5までのいずれか1項記載の薄膜LED。
- 少なくとも前記主面(14)の側縁の長さは400μmまたはそれ以上である、請求項1から6までのいずれか1項記載の薄膜LED。
- 少なくとも前記主面(14)の側縁の長さは800μmまたはそれ以上である、請求項7記載の薄膜LED。
- 300mAまたはそれ以上の電流強度で駆動される、請求項1から8までのいずれか1項記載の薄膜LED。
- 前記第1のコンタクト層(11,12,13)はアルミニウムを含有しない、請求項1から9までのいずれか1項記載の薄膜LED。
- 前記主面(14)の全体の面積の15%以下が前記第1のコンタクト層(11,12,13)によって覆われている、請求項1から10までのいずれか1項記載の薄膜LED。
- 前記第1のコンタクト層(11,12,13)は横方向の構造を有し、該第1のコンタクト層(11,12,13)はコンタクト面(11)および複数のコンタクトウェブ(12,13)を包含する、請求項1から11までのいずれか1項記載の薄膜LED。
- 前記コンタクト面(11)は少なくとも1つのフレーム状のコンタクトウェブ(13)によって包囲されており、該フレーム状のコンタクトウェブ(13)は少なくとも1つの別のコンタクトウェブ(12)によって前記コンタクト面と接続されている、請求項12記載の薄膜LED。
- 前記フレーム状のコンタクトウェブ(13)は正方形、長方形または円形の形状を有する、請求項13記載の薄膜LED。
- 前記フレーム状のコンタクトウェブ(13)の数は1,2または3である、請求項13または14記載の薄膜LED。
- 前記アクティブ層(7)の前記第1のコンタクト層(11,12,13)側とは反対側に、前記ビームを反射させる第2のコンタクト層(5)が設けられており、前記第1のコンタクト層(11,12,13)はコンタクト面(11)を有し、前記第2のコンタクト層(5)は前記コンタクト面(11)と対向する領域において切欠き(18)を有する、請求項1から15までのいずれか1項記載の薄膜LED。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004003986 | 2004-01-26 | ||
DE102004003986.0 | 2004-01-26 | ||
PCT/DE2005/000099 WO2005071763A2 (de) | 2004-01-26 | 2005-01-25 | Dünnfilm-led mit einer stromaufweitungsstruktur |
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JP2007519246A JP2007519246A (ja) | 2007-07-12 |
JP5032130B2 true JP5032130B2 (ja) | 2012-09-26 |
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JP2006549861A Active JP5032130B2 (ja) | 2004-01-26 | 2005-01-25 | 電流拡散構造を有する薄膜led |
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Country | Link |
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US (1) | US8368092B2 (ja) |
EP (1) | EP1709694B1 (ja) |
JP (1) | JP5032130B2 (ja) |
KR (1) | KR101386192B1 (ja) |
CN (1) | CN100411209C (ja) |
TW (1) | TWI282182B (ja) |
WO (1) | WO2005071763A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8907363B2 (en) | 2009-05-04 | 2014-12-09 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package and lighting system including the same |
US9356195B2 (en) | 2010-07-23 | 2016-05-31 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package comprising the same and lighting system |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5270088B2 (ja) * | 2005-12-15 | 2013-08-21 | エルジー エレクトロニクス インコーポレイティド | 垂直型発光素子及びその製造方法 |
DE102005061797B4 (de) * | 2005-12-23 | 2020-07-09 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip mit Stromaufweitungsschicht und Verfahren zu dessen Herstellung |
JP2007258338A (ja) * | 2006-03-22 | 2007-10-04 | Rohm Co Ltd | 半導体発光素子 |
DE102006034847A1 (de) * | 2006-04-27 | 2007-10-31 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
KR100869962B1 (ko) * | 2006-12-07 | 2008-11-24 | 한국전자통신연구원 | 전류 확산층을 포함하는 발광소자의 제조방법 |
DE102007020291A1 (de) * | 2007-01-31 | 2008-08-07 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung einer Kontaktstruktur für einen derartigen Chip |
US7759670B2 (en) * | 2007-06-12 | 2010-07-20 | SemiLEDs Optoelectronics Co., Ltd. | Vertical LED with current guiding structure |
DE102007046519A1 (de) | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Dünnfilm-LED mit einer Spiegelschicht und Verfahren zu deren Herstellung |
US7906786B2 (en) * | 2008-01-11 | 2011-03-15 | Industrial Technology Research Institute | Light emitting device |
US8502259B2 (en) | 2008-01-11 | 2013-08-06 | Industrial Technology Research Institute | Light emitting device |
DE102008035900A1 (de) * | 2008-04-30 | 2009-11-05 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
DE102008035110A1 (de) * | 2008-07-28 | 2010-02-11 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
DE102009060749B4 (de) | 2009-12-30 | 2021-12-30 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
US8785904B2 (en) * | 2011-04-20 | 2014-07-22 | Invenlux Corporation | Light-emitting device with low forward voltage and method for fabricating the same |
US9847372B2 (en) * | 2011-12-01 | 2017-12-19 | Micron Technology, Inc. | Solid state transducer devices with separately controlled regions, and associated systems and methods |
JP5960426B2 (ja) | 2011-12-16 | 2016-08-02 | スタンレー電気株式会社 | 半導体素子及び半導体素子の製造方法 |
CA2872816C (en) | 2012-09-26 | 2015-08-04 | Ledtech International Inc. | Multilayer optical interference filter |
TWD172675S (zh) * | 2014-12-19 | 2015-12-21 | 晶元光電股份有限公司 | 發光二極體陣列之部分 |
TWI662597B (zh) * | 2016-09-09 | 2019-06-11 | 晶元光電股份有限公司 | 製造半導體元件的方法 |
TWI701719B (zh) * | 2016-09-09 | 2020-08-11 | 晶元光電股份有限公司 | 製造半導體元件的方法 |
DE102017119931A1 (de) * | 2017-08-30 | 2019-02-28 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
Family Cites Families (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5008718A (en) * | 1989-12-18 | 1991-04-16 | Fletcher Robert M | Light-emitting diode with an electrically conductive window |
US5233204A (en) * | 1992-01-10 | 1993-08-03 | Hewlett-Packard Company | Light-emitting diode with a thick transparent layer |
JP3666444B2 (ja) * | 1992-10-15 | 2005-06-29 | セイコーエプソン株式会社 | 面発光型半導体レーザおよびその製造方法 |
US5861636A (en) * | 1995-04-11 | 1999-01-19 | Nec Corporation | Surface emitting visible light emiting diode having ring-shaped electrode |
JPH0936431A (ja) * | 1995-07-13 | 1997-02-07 | Toshiba Corp | 半導体発光素子 |
US5981384A (en) * | 1995-08-14 | 1999-11-09 | Micron Technology, Inc. | Method of intermetal dielectric planarization by metal features layout modification |
DE19638667C2 (de) * | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
JP3587224B2 (ja) | 1996-07-24 | 2004-11-10 | ソニー株式会社 | オーミック電極 |
DE19640594B4 (de) | 1996-10-01 | 2016-08-04 | Osram Gmbh | Bauelement |
CN1964093B (zh) * | 1997-01-09 | 2012-06-27 | 日亚化学工业株式会社 | 氮化物半导体元器件 |
US6677619B1 (en) * | 1997-01-09 | 2004-01-13 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
US6268618B1 (en) * | 1997-05-08 | 2001-07-31 | Showa Denko K.K. | Electrode for light-emitting semiconductor devices and method of producing the electrode |
JP3744211B2 (ja) * | 1997-09-01 | 2006-02-08 | 日亜化学工業株式会社 | 窒化物半導体素子 |
CA2298491C (en) | 1997-07-25 | 2009-10-06 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
DE19741609C2 (de) | 1997-09-20 | 2003-02-27 | Vishay Semiconductor Gmbh | Verwendung einer Übergitterstruktur aus einer Mehrzahl von hintereinander angeordneten Heterogrenzflächenschichtfolgen zur Verbesserung der lateralen Stromausbreitung in einer lichtemittierenden Halbleiterdiode |
DE19747433A1 (de) | 1997-10-28 | 1999-05-06 | Vishay Semiconductor Gmbh | Lichtemittierende Halbleiterdiode |
US6541797B1 (en) * | 1997-12-04 | 2003-04-01 | Showa Denko K. K. | Group-III nitride semiconductor light-emitting device |
JP3680558B2 (ja) * | 1998-05-25 | 2005-08-10 | 日亜化学工業株式会社 | 窒化物半導体素子 |
JP2000091638A (ja) | 1998-09-14 | 2000-03-31 | Matsushita Electric Ind Co Ltd | 窒化ガリウム系化合物半導体発光素子 |
JP2001053339A (ja) * | 1999-08-11 | 2001-02-23 | Toshiba Corp | 半導体発光素子およびその製造方法 |
DE19947030A1 (de) * | 1999-09-30 | 2001-04-19 | Osram Opto Semiconductors Gmbh | Oberflächenstrukturierte Lichtemissionsdiode mit verbesserter Stromeinkopplung |
JP3893874B2 (ja) * | 1999-12-21 | 2007-03-14 | 日亜化学工業株式会社 | 窒化物半導体発光素子の製造方法 |
US6649942B2 (en) * | 2001-05-23 | 2003-11-18 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device |
EP1406314B1 (en) | 2001-07-12 | 2015-08-19 | Nichia Corporation | Semiconductor device |
DE10146719A1 (de) * | 2001-09-20 | 2003-04-17 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
DE20115914U1 (de) * | 2001-09-27 | 2003-02-13 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
JP2003133589A (ja) | 2001-10-23 | 2003-05-09 | Mitsubishi Cable Ind Ltd | GaN系半導体発光ダイオード |
JP4148494B2 (ja) * | 2001-12-04 | 2008-09-10 | シャープ株式会社 | 窒化物系化合物半導体発光素子およびその製造方法 |
US6784462B2 (en) * | 2001-12-13 | 2004-08-31 | Rensselaer Polytechnic Institute | Light-emitting diode with planar omni-directional reflector |
TWI226139B (en) * | 2002-01-31 | 2005-01-01 | Osram Opto Semiconductors Gmbh | Method to manufacture a semiconductor-component |
DE10303978A1 (de) | 2002-01-31 | 2003-11-27 | Osram Opto Semiconductors Gmbh | Dünnfilmhalbleiterbauelement und Verfahren zu dessen Herstellung |
DE10243757A1 (de) | 2002-01-31 | 2004-04-01 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiterchips |
DE10303977A1 (de) | 2002-01-31 | 2003-11-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements |
DE10203795B4 (de) | 2002-01-31 | 2021-12-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Halbleiterbauelements |
US6650018B1 (en) * | 2002-05-24 | 2003-11-18 | Axt, Inc. | High power, high luminous flux light emitting diode and method of making same |
JP2004055646A (ja) | 2002-07-17 | 2004-02-19 | Sumitomo Electric Ind Ltd | 発光ダイオード素子のp側電極構造 |
US6787882B2 (en) * | 2002-10-02 | 2004-09-07 | The United States Of America As Represented By The Secretary Of The Navy | Semiconductor varactor diode with doped heterojunction |
US7474999B2 (en) * | 2002-12-23 | 2009-01-06 | Cadence Design Systems, Inc. | Method for accounting for process variation in the design of integrated circuits |
US20060180804A1 (en) | 2003-01-31 | 2006-08-17 | Peter Stauss | Thin-film semiconductor component and production method for said component |
EP2894678A1 (de) | 2003-01-31 | 2015-07-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements |
JP2004363572A (ja) | 2003-05-12 | 2004-12-24 | Showa Denko Kk | 半導体発光素子および発光ダイオード |
JP2005012092A (ja) | 2003-06-20 | 2005-01-13 | Stanley Electric Co Ltd | 光ファイバ用ledおよびその製造方法 |
JP4120493B2 (ja) | 2003-06-25 | 2008-07-16 | 松下電工株式会社 | 発光ダイオードおよび発光装置 |
WO2005043587A2 (en) * | 2003-10-10 | 2005-05-12 | The Regents Of The University Of California | Design methodology for multiple channel heterostructures in polar materials |
-
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Cited By (4)
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US8907363B2 (en) | 2009-05-04 | 2014-12-09 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package and lighting system including the same |
US9343640B2 (en) | 2009-05-04 | 2016-05-17 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package and lighting system including the same |
US9356195B2 (en) | 2010-07-23 | 2016-05-31 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package comprising the same and lighting system |
US10141478B2 (en) | 2010-07-23 | 2018-11-27 | Lg Innotek Co., Ltd. | Structure of a reflective electrode and an OHMIC layer of a light emitting device |
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Publication number | Publication date |
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JP2007519246A (ja) | 2007-07-12 |
CN100411209C (zh) | 2008-08-13 |
WO2005071763A2 (de) | 2005-08-04 |
TW200529474A (en) | 2005-09-01 |
EP1709694B1 (de) | 2017-03-15 |
KR20070012641A (ko) | 2007-01-26 |
TWI282182B (en) | 2007-06-01 |
US20070278508A1 (en) | 2007-12-06 |
KR101386192B1 (ko) | 2014-04-17 |
US8368092B2 (en) | 2013-02-05 |
WO2005071763A3 (de) | 2006-03-16 |
CN1914742A (zh) | 2007-02-14 |
EP1709694A2 (de) | 2006-10-11 |
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