TWI236050B - Substrate processing method and substrate processing apparatus - Google Patents
Substrate processing method and substrate processing apparatus Download PDFInfo
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- TWI236050B TWI236050B TW092136698A TW92136698A TWI236050B TW I236050 B TWI236050 B TW I236050B TW 092136698 A TW092136698 A TW 092136698A TW 92136698 A TW92136698 A TW 92136698A TW I236050 B TWI236050 B TW I236050B
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B18/00—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body
- A61B18/04—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by heating
- A61B18/06—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by heating caused by chemical reaction, e.g. moxaburners
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61H—PHYSICAL THERAPY APPARATUS, e.g. DEVICES FOR LOCATING OR STIMULATING REFLEX POINTS IN THE BODY; ARTIFICIAL RESPIRATION; MASSAGE; BATHING DEVICES FOR SPECIAL THERAPEUTIC OR HYGIENIC PURPOSES OR SPECIFIC PARTS OF THE BODY
- A61H39/00—Devices for locating or stimulating specific reflex points of the body for physical therapy, e.g. acupuncture
- A61H39/06—Devices for heating or cooling such points within cell-life limits
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61H—PHYSICAL THERAPY APPARATUS, e.g. DEVICES FOR LOCATING OR STIMULATING REFLEX POINTS IN THE BODY; ARTIFICIAL RESPIRATION; MASSAGE; BATHING DEVICES FOR SPECIAL THERAPEUTIC OR HYGIENIC PURPOSES OR SPECIFIC PARTS OF THE BODY
- A61H9/00—Pneumatic or hydraulic massage
- A61H9/005—Pneumatic massage
- A61H9/0057—Suction
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61M—DEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY; DEVICES FOR TRANSDUCING BODY MEDIA OR FOR TAKING MEDIA FROM THE BODY; DEVICES FOR PRODUCING OR ENDING SLEEP OR STUPOR
- A61M1/00—Suction or pumping devices for medical purposes; Devices for carrying-off, for treatment of, or for carrying-over, body-liquids; Drainage systems
- A61M1/08—Cupping glasses, i.e. for enhancing blood circulation
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Abstract
Description
1236050 玫、發明說明: 【發明所屬之技術領域】 本發明係關於一種在半導體晶圓、液晶顯示裝置用破璃 基板电漿顯示杰用玻璃基板、印刷基板等的基板表面供 應清洗液而處理基板之基板處理方法及基板處理裝置。 【先前技術】 在半導體晶圓等基板表面,使用微影技術而以銅、鋁、 銀等金屬材料形成配線圖案時,首先,在基板表面形成銅、 鋁、銀等的金屬膜,且在該金屬膜上形成光阻膜後,對基 板施以曝光、顯像及蝕刻之各處理而進行所希望的圖案 化,之後,從基板表面將殘留於基板上之光阻膜被膜剝離 並加以去除。該等一連串的製程中,在從基板上去除光阻 膜被膜之步驟,例如可使用含胺之有機剝離液。接著,剝 離處理後的基板使用純水進行清洗處理後,可進行乾燥處 理。 在此,使用含胺之有機剥離液而將基板剝離處理後,於 附著有剝離液之基板表面供應純水而進行清洗處理時,含 胺之剝離液會與純水相混合而產生強鹼性溶液。其結果, 會發生用以形成配線圖案的金屬膜被腐蝕或溶解之問題。 因此,為解決上述問題點,係提出一種方法,其係在剥離 處理後的清洗處理中’使用溶解有二氧化碳之純水。換言 之,係提出一種方法(例如’參照特許文獻一):藉由對附著 有含胺之剝離液之基板表面大量噴出溶解有二氧化碳之純 水,中和胺所造成的強鹼性,以防止強鹼性溶液產1236050 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a method for processing a substrate by supplying a cleaning liquid on the surface of a substrate such as a semiconductor substrate, a broken glass substrate for a liquid crystal display device, and a glass substrate or a printed substrate. Substrate processing method and substrate processing apparatus. [Prior art] When a wiring pattern is formed on a substrate surface such as a semiconductor wafer with a metal material such as copper, aluminum, or silver using lithography technology, first, a metal film such as copper, aluminum, or silver is formed on the substrate surface, and After the photoresist film is formed on the metal film, the substrate is subjected to various processes such as exposure, development, and etching to perform desired patterning. Thereafter, the photoresist film film remaining on the substrate is peeled from the substrate surface and removed. In these series of processes, in the step of removing the photoresist film coating from the substrate, for example, an organic stripping solution containing amine can be used. Then, the substrate after the peeling process is cleaned with pure water, and then dried. Here, after the substrate is peeled by using an organic stripping solution containing amine, when pure water is supplied to the surface of the substrate to which the stripping solution is adhered and the cleaning process is performed, the stripping solution containing amine is mixed with pure water to generate strong alkalinity. Solution. As a result, a problem arises that the metal film used to form the wiring pattern is corroded or dissolved. Therefore, in order to solve the above problems, a method is proposed in which pure water in which carbon dioxide is dissolved is used in a cleaning process after the peeling process. In other words, a method is proposed (for example, refer to Patent Document 1): by spraying a large amount of pure carbon dioxide dissolved pure water on the surface of a substrate to which a stripping solution containing amine is attached, the strong alkalinity caused by amine is neutralized to prevent strong Alkali solution production
O:\89\89957.DOC 1236050 圖3係顯示具有可將溶解有二氧化碳的純水作為清洗液 用之水洗處理部之以往之基板處理裝置的概略構成一例的 模式正面圖。在該基板處理裝置係設有剝離處理部Μ,其 於水洗處理部60的前段側與水洗處理部6〇相鄰接。 、剝離處理部62,其一部份並未圖示而未顯示詳細的構 成,但具備處理室64,而在處理室64内部係配設滾轴輸送 機66’其用以支持基^而往水平方向搬送。基板w利用滾 軸輸送機66而以水平姿勢受支持,或在與基板搬送方向相 正交之方向以稍微傾斜姿勢受支持而可搬送。該基板以係 ㈣處理後的基板’在其表面披著光阻膜被膜。此外,在 基板搬达路上方’沿著基板搬送路而設置有複數剝離液嘴 出嘴(未圖示)。接著’在處理室6怕—邊利用滾軸輸送機^ 搬送基板W,-邊從剝離液嗔出嘴供應_液,例如包含【 -甲基-2-峨酮、異丙醇胺、乙醇胺等含胺之有機3剝 離液,至基板W上面。如此,將披著於基板^面之光_ 被膜浴解而從基板表面去除。 剝離處理部62中,先在可進行剝離處理且可從處理室μ 的出口68搬出之基板W表面附著剝離W,基板〜在其表面 附著有剝離液1之狀態下可搬送至水洗處理部6〇。水洗〆理 部6。具備處理室70’其具有入口側開口 72及出口側:口 74,在處理室糊部係配設滾轴輸送機%,纟以水平 或稍微傾斜姿冑支持基板w而往水平方向搬送。在處理a 7。的入口側開口 72附近係配設有入口喷嘴78,其用:將J 幕狀清洗液喷出至基板W上面。此外’失有基板搬送路而O: \ 89 \ 89957.DOC 1236050 Fig. 3 is a schematic front view showing an example of a schematic configuration of a conventional substrate processing apparatus having a water-washing processing unit capable of using pure water in which carbon dioxide is dissolved as a cleaning solution. The substrate processing apparatus is provided with a peeling processing unit M, which is adjacent to the water washing processing unit 60 on the front side of the water washing processing unit 60. A part of the peeling processing section 62 is not shown in the figure and does not show a detailed structure, but it has a processing chamber 64, and a roller conveyor 66 'is arranged inside the processing chamber 64 to support the foundation. Transport horizontally. The substrate w is supported by the roller conveyor 66 in a horizontal posture, or it can be transported by being supported in a slightly inclined posture in a direction orthogonal to the substrate conveying direction. The substrate is coated with a photoresist film on the surface of the substrate. Further, a plurality of peeling liquid nozzles (not shown) are provided above the substrate transfer path along the substrate transfer path. Next, in the processing room 6-while using a roller conveyor ^ to transfer the substrate W,-while taking out the liquid from the stripping solution, supply liquid, for example, containing [-methyl-2- ketone, isopropanolamine, ethanolamine, etc. The amine-containing organic 3 peeling liquid is on the substrate W. In this way, the light_coating that covers the surface of the substrate is dissolved and removed from the surface of the substrate. In the peeling processing section 62, the peeling W is first adhered to the surface of the substrate W that can be peeled and can be carried out from the outlet 68 of the processing chamber μ. The substrate ~ can be transported to the washing processing section 6 with the peeling liquid 1 adhered to the surface. 〇. Washing and cleaning department 6. The processing chamber 70 'is provided with an inlet-side opening 72 and an outlet-side: port 74. A roller conveyor% is disposed in the paste portion of the processing chamber, and the substrate w is transported in a horizontal or slightly inclined position to the horizontal direction. In processing a 7. An inlet nozzle 78 is provided near the entrance-side opening 72 of the nozzle 72 for the purpose of spraying the J-screen cleaning liquid onto the substrate W. In addition, there is no board conveyance path
O:\89\89957 DOC 1236050 在其上方及下方’沿著基板搬送路而分別連設上部喷嘴8〇 及下部噴嘴82。分別連通入口噴嘴78、上部喷嘴8〇及下部 f嘴82之各清洗液供應配管84、86、88係分別連通配管 90a,而配管9〇a係流路連接於泵92的喷出口側。泵92的吸 入口側經由配管90b而流路連接於儲存有純水2之儲水槽94 底部。接著,在配管90a中途插入氣體溶解模件96,並使連 接儲氣瓶等碳酸氣體供應源之氣體供應管98連接於氣體溶 解模件96,以使二氧化碳溶解於可通過配管9〇a而送至清洗 液供應配管84、86、88之純水中。 在處理室70底部,連通有排液用配管1〇〇,通過排液用配 官100可廢棄使用過的清洗液。此外,雖未圖示,但在水洗 處理部60下流側係連設複數水洗處理部。接著,在配置於 下流側之水洗處理部中,基板洗淨所使用之純水可送至與 该水洗處理部相鄰接之上流側水洗處理部的儲水槽内,使 從位於最下流側之水洗處理部依序送至位於上流側之各水 洗處理部的儲水槽内之使用過的純水通過送液配管1 〇2而 供應至水洗處理部6 0的儲水槽9 4内。 具有圖3所示構成之水洗處理部中,通過入口側開口 72 而搬入處理室70内之基板W,首先,藉由從入口喷嘴78喷 出至基板W上面之簾幕狀清洗液,可沖洗附著於表面之剝 離液1。此外,藉由一邊利用滾軸輸送機76將基板w搬送至 處理室70内,一邊分別從上部噴嘴8〇及下部喷嘴82往基板 W上·下兩面喷出清洗液,可沖洗附著於基板w表面之剝離 液1。此時,基板W上會產生含胺之剝離液與清洗液(純水)O: \ 89 \ 89957 DOC 1236050 The upper nozzle 80 and the lower nozzle 82 are respectively connected above and below the substrate conveyance path along the substrate conveying path. Each of the cleaning liquid supply pipes 84, 86, and 88 that communicates with the inlet nozzle 78, the upper nozzle 80, and the lower f nozzle 82 communicates with the pipe 90a, respectively, and the pipeline 90a is connected to the discharge port side of the pump 92. The suction inlet side of the pump 92 is connected to the bottom of the water storage tank 94 in which the pure water 2 is stored through a flow path through a pipe 90b. Next, a gas dissolution module 96 is inserted in the middle of the pipe 90a, and a gas supply pipe 98 connected to a carbon dioxide gas supply source such as a gas cylinder is connected to the gas dissolution module 96 so that carbon dioxide can be dissolved through the pipe 90a and sent. To pure water in the cleaning solution supply pipes 84, 86, and 88. A drain pipe 100 is connected to the bottom of the processing chamber 70, and the used cleaning liquid can be discarded by the drain official 100. Although not shown, a plurality of water washing treatment units are provided downstream of the water washing treatment unit 60 in series. Next, in the water washing processing section disposed on the downstream side, the pure water used for substrate cleaning can be sent to the water storage tank of the water washing processing section on the upstream side adjacent to the water washing processing section, so that The water washing treatment unit sequentially sends the used pure water in the water storage tanks of the water washing treatment units located on the upstream side to the water storage tank 94 of the water washing treatment unit 60 through the liquid feed pipe 1 02. In the water-washing processing unit having the structure shown in FIG. 3, the substrate W in the processing chamber 70 is carried through the inlet-side opening 72. First, the curtain-shaped cleaning liquid sprayed from the inlet nozzle 78 onto the substrate W can be washed. Peeling liquid 1 attached to the surface. In addition, while the substrate w is transferred into the processing chamber 70 by the roller conveyor 76, the cleaning liquid is sprayed from the upper nozzle 80 and the lower nozzle 82 to the upper and lower surfaces of the substrate W, thereby washing and adhering to the substrate w. Surface peeling fluid 1. At this time, a peeling liquid and a cleaning liquid (pure water) containing amine are generated on the substrate W
O:\89\89957.DOC 1236050 相混合之溶液,但由於清洗液中係溶解有二氧化碳,故可 中和胺所造成的鹼性而防止溶液形成強鹼性。接著,完成 水洗處理部60中的清洗處理之基板w,從處理室心㈣ 出口側開口 74而搬出’並搬送至鄰接的水洗處理部。 【特許文獻一】 曰本特開2002— 141269號公報(第5一6頁、圖工) 別從入口喷嘴7 8 的之清洗液量, 在具有圖3所示構成之以往之基板處理裝置,水洗處理部 6〇中基板W的沖洗處理使料之清洗㈣從處理室7〇底部 通過排液用配管⑽而完全廢棄。因為,藉由在清洗液混合 剝離液,聽液巾所含的胺會形成㈣成份而包含於使用 匕的β洗液中。如此,由於使用過的清洗液可全部廢棄, 故可從與水洗處理部6 〇相鄰接之下流側的水洗處理部通過 送液配管1G2而供應至儲水槽94内之純水量,係不足夠可分 、上部喷嘴80及下部喷嘴82供應至基板w 必須由其他途徑從純水供應源將純水供應 至儲水槽94内。如此,有以下問題 純水的使用量增加, 且隨之碳酸氣體的消耗量亦增加。 另一方面,即使稍微減少純水的使用量,從處理室7〇底 部排出之使用過的清洗液的一部份回到儲水槽94内,且欲 /衣使用α冼液日可,儲水槽94内的清洗液中會殘留胺(腐餘 成伤)’於接下來進行沖洗處理的基板上會產生問題。 本發明係鑑於上述之情事而成者,其目的在於提供一種 在基板表面供應清洗液而處理基板時,可減少清洗液(純水O: \ 89 \ 89957.DOC 1236050 mixed solution, but because carbon dioxide is dissolved in the cleaning solution, it can neutralize the alkalinity caused by amine and prevent the solution from forming strong alkalinity. Next, the substrate w which has undergone the cleaning process in the water-washing processing section 60 is carried out 'from the opening 74 on the outlet side of the processing chamber, and is transferred to the adjacent water-washing processing section. [Patent Document 1] Japanese Patent Application Laid-Open No. 2002-141269 (page 5-16, drawing) The conventional substrate processing apparatus having the structure shown in FIG. The washing process of the substrate W in the water washing processing unit 60 causes the material to be washed from the bottom of the processing chamber 70 through the drain pipe ⑽ and completely discarded. This is because by mixing the peeling liquid with the cleaning solution, the amine contained in the liquid towel will form a tritium component and be contained in the beta cleaning solution using a dagger. In this way, since the used washing liquid can be completely discarded, the amount of pure water that can be supplied to the water storage tank 94 through the liquid feeding pipe 1G2 from the washing processing unit on the downstream side adjacent to the washing processing unit 60 is insufficient. The separable, upper nozzle 80 and lower nozzle 82 are supplied to the substrate w. Pure water must be supplied into the water storage tank 94 from a pure water supply source by other means. In this way, there are the following problems: the amount of pure water used increases, and the consumption of carbon dioxide gas also increases. On the other hand, even if the amount of pure water used is slightly reduced, a part of the used cleaning liquid discharged from the bottom of the processing chamber 70 is returned to the water storage tank 94. Residues of amines in the cleaning solution in 94 (corrosion and wounds) will cause problems on the substrates that are subsequently processed. The present invention has been made in view of the foregoing circumstances, and an object thereof is to provide a method for reducing the number of cleaning liquids (pure water) when processing a substrate by supplying a cleaning liquid to the substrate surface.
〇 \89\89957 DOC -10- 1236050 的使用量之基板處理方法,及可良好地實施該方法之基板 處理裝置。 【發明内容】 申請專利範圍第1項之發明係一種基板處理方法,其用以 在處理至内一邊搬送基板,一邊從配設於前述處理室的入 口附近且可將簾幕狀清洗液喷出至基板上面之入口噴嘴、 及夾有基板搬送路而分別在其上方與下方沿著基板搬送路 而連没且喷出清洗液至基板上面及下面之上部喷嘴及下部 喷觜,分別對基板供應清洗液而處理基板,其特徵係 /、備以下步驟·(a)最初將基板搬入前述處理室内時,從 月’J述入口喷嘴與前述上部喷嘴將清洗液供應至基板之步 驟、(b)則述(a)步驟完成後,直到基板從前述處理室内搬 出攸刖述上部喷嘴與前述下部喷嘴將清洗液供應至基板 :步驟、(c)從基板搬入處理室内後經過特定時間前,將從 月J述處理至底部所排出使用過的清洗液廢棄之步冑、及⑷ 河述⑷步驟完成後,直到基板從前述處理室㈣出,將使 用過的清洗液回收至回收槽而再使用之步驟;可搬送至前 述處理室之基板係剝離處理後的基板,其上面係附著含胺 之剝離液,則述清洗液係在純水巾溶解有三氧化碳之清洗 液0 申請專利範圍第2項之發明係_種基板處理方法,其用以 在處理室内一邊搬送基板,—邊從配設於前述處理室的入 口附近且可將簾幕狀清洗液噴出至基板上面之入口喷嘴、 及夾有基板搬送路而分別在其上方與下方沿著基板搬送路〇 \ 89 \ 89957 DOC -10- 1236050 used substrate processing method, and a substrate processing device that can implement this method well. [Summary of the Invention] The invention in item 1 of the scope of patent application is a substrate processing method, which is used to convey the substrate from the inside to the inside of the processing chamber while spraying the curtain-shaped cleaning liquid from the vicinity of the entrance of the processing chamber The inlet nozzle to the upper surface of the substrate and the substrate conveying path are sandwiched, respectively, above and below the substrate conveying path along the substrate conveying path, respectively, and the cleaning liquid is sprayed to the upper and lower nozzles of the upper and lower sides of the substrate. The process of processing a substrate with a cleaning liquid is characterized by the following steps: (a) the step of supplying the cleaning liquid to the substrate from the inlet nozzle and the upper nozzle described above when the substrate is first moved into the processing chamber; (b) Then after step (a) is completed, until the substrate is removed from the processing chamber, the upper nozzle and the lower nozzle supply cleaning liquid to the substrate: step, (c) before a certain time elapses after the substrate is moved into the processing chamber, Steps from the process described above to the disposal of the used cleaning solution discharged at the bottom, and after the process described above is completed, until the substrate is ejected from the aforementioned processing chamber, it will be used. The cleaning liquid is recovered to a recovery tank and reused. The substrate that can be transported to the processing chamber is a substrate after peeling treatment, and a stripping solution containing amine is attached to the substrate. The cleaning liquid is dissolved in pure water towel with trioxide. Carbon cleaning solution 0 The invention of item 2 of the scope of patent application is a substrate processing method for transferring substrates in a processing chamber, and from the vicinity of the entrance of the processing chamber, while cleaning the curtain-like cleaning solution. An inlet nozzle ejected onto the upper surface of the substrate, and a substrate conveying path sandwiched therebetween, along the substrate conveying path above and below, respectively
Ο \89\89957 DOC 1236050 連又且嘴出清洗液至基板上面及下面之上部喷嘴及下部 贺嘴’分別對基板供應清洗液而處理基板,其特徵係 具備以下步驟:(a)最初將基板搬入前述處理室内時,從 則述入口噴嘴與前述上部喷嘴將清洗液供應至基板之步 (b)别述(a)步驟完成後,直到基板從前述處理室内搬 出,從前述上部喷嘴與前述下部噴嘴將清洗液供應至基板 之步驟、(c)持續計測用以顯示可從前述處理室底部排出之 使用過的清洗液中所含的胺量,所計測的指示值滿足特定 、件七將使用過的清洗液廢棄之步驟、及(d)前述所計測 的指不值滿足前述特定條件且直到基板從處理室内搬出, 將使用過的清洗液回收至回收槽而再使用之步驟;可搬送 至A述處理室之基板係剝離處理後的基板,其上面係附著 含胺之剝離液;前述清洗液係在純水中溶解有二氧化碳之 清洗液。 申請專利範圍第3項之發明在申請專利範圍第2項之基板 處理方法中’前述指示值係pH值,前述(c)步驟係所計測的 PH值為特定值以下前,將使用過的清洗液廢棄之步驟;前 述(d)步驟係所計測的pH值為特定值以下且直到前述基板 從丽述處理室内搬出,將使用過的清洗液回收至回收槽而 再使用之步驟。 申請專利範圍第4項之發明係一種基板處理裝置,其具 備·處理室,其可進行基板的處理;基板搬送手段,其可 在處理室内搬送基板;入口喷嘴,其可將簾幕狀清洗液喷 出至配設於前述處理室入口附近的基板上面;上部喷嘴及〇 \ 89 \ 89957 DOC 1236050 The cleaning solution is supplied to the upper and lower nozzles and lower nozzles of the substrate. The substrate is supplied with cleaning solution to process the substrate. The characteristics are as follows: (a) the substrate is initially When carrying in the processing chamber, the step of supplying cleaning liquid to the substrate from the inlet nozzle and the upper nozzle (b) separately (a) After the completion of step (a), until the substrate is removed from the processing chamber, from the upper nozzle and the lower portion The step in which the nozzle supplies the cleaning liquid to the substrate, (c) continuous measurement is used to display the amount of amine contained in the used cleaning liquid that can be discharged from the bottom of the processing chamber, and the measured indication value meets the specific requirements. The step of discarding the used cleaning solution, and (d) the above-mentioned measured value is not a step that satisfies the aforementioned specific conditions until the substrate is removed from the processing chamber, and the used cleaning solution is recovered to a recovery tank for reuse; it can be transported to The substrate of the processing chamber A is a substrate after peeling treatment, and an amine-containing peeling liquid is attached to the substrate; the aforementioned cleaning liquid is cleaned by dissolving carbon dioxide in pure water. . For the invention in the third scope of the patent application, in the substrate processing method in the second scope of the patent application, the aforementioned indication value is the pH value, and the pH value measured in the step (c) is below a specific value. The step of discarding the liquid; the step (d) is a step in which the measured pH value is less than a specific value and the substrate is removed from the Lishui processing chamber, and the used cleaning liquid is recovered to a recovery tank and then used. The invention in item 4 of the scope of patent application is a substrate processing apparatus including a processing chamber that can process substrates; a substrate conveying means that can transport substrates in the processing chamber; and an inlet nozzle that can clean curtain-like liquid Sprayed onto the substrate arranged near the entrance of the processing chamber; the upper nozzle and
O:\89\89957.DOC -12- 1236050 下邛噴嘴’其可在丽述處理室内,夾有基板搬送路而分別 在,、上方及下方沿著基板搬送路而連設,並將清洗液喷出 至基板上面及下面· ^ — ’弟 至弟三清洗液供應配管,其可分 i連述入口賀嘴、前述上部噴嘴及下部喷嘴;及清洗 n手&#可通過前述各清洗液供應配管而將清洗液 分別供應至前述入口噴嘴、前述上部喷嘴及下部喷嘴,其 特2係^一步具備:第一至第三開關控制闊,其係分別插 入刖述第一至第二清洗液供應配管、排液用配管,其用以 將可仗刖述處理室底部排出之使用過的清洗液廢棄、第四 開關控制閥’其係插入前述排液用配管、回收用配管,其 用以回收使用過的清洗液、第五開關控制目,其係插入前 述回收用配管、回J令描 4+ «η ^ 口收槽其用以將從前述處理室底部通過 月ί述回收用g己官而排出之使用過的清洗液回收、及控制手 段·,其用以控制前述第一至第五開關控制閥的各個開關動 作,可搬送至前述處理室之基板係剝離處理後的基板,其 上面係附著含胺之剝離液;前述清洗液係在純水中溶解有 二氧化碳之清洗液;前述控制手段係分別控制:第一動作, 其最初將基板搬入前述處理室内日寺,打開前述第一開關控 制與前述第二開關控制閥,-之後,直到基板從前述處理 出打開剷述第二開關控制閥與前述第三開關控制 閥’ ^第二動作’其從基板搬入前述處理室内後經過特定 時間前’打開前述第四開關控制閥並關閉前述第五開關控 制閥,之後’直到基板從處理室内搬出,打開前述第五開 關控制閥並關閉前述第四開關控制閥。O: \ 89 \ 89957.DOC -12- 1236050 Lower nozzles can be placed in the processing room of Lishu with the substrate conveying path sandwiched between, above, and below the substrate conveying path, and the cleaning liquid Sprayed onto the top and bottom of the substrate. ^ — 'Younger to younger three cleaning liquid supply piping, which can be divided into the inlet nozzle, the above upper nozzle and the lower nozzle; and cleaning hand &#pass through the aforementioned cleaning liquid Supply piping to supply the cleaning liquid to the inlet nozzle, the upper nozzle, and the lower nozzle, respectively. The second step includes: the first to third switches are controlled, and the first to second cleaning liquids are respectively inserted. Supply piping and draining piping, which are used to discard the used cleaning liquid that can be discharged from the bottom of the processing chamber. The fourth switching control valve is inserted into the draining piping and recovery piping. The used cleaning fluid and the fifth switch control object are collected, which are inserted into the aforementioned recovery pipe, and return to the command line 4+ «η ^ mouth collecting tank, which is used to pass the recovery g through the bottom of the processing chamber. Officially used used cleaning Liquid recovery and control means for controlling the opening and closing operations of the first to fifth switching control valves. The substrate that can be transported to the processing chamber is a substrate after peeling treatment, and an amine-containing peeling liquid is attached to the substrate. The aforementioned cleaning solution is a cleaning solution in which carbon dioxide is dissolved in pure water; the aforementioned control means respectively control: the first action, which initially moves the substrate into the processing chamber, and turns on the first switch control and the second switch control After the valve is turned on, the second switch control valve and the third switch control valve are opened until the substrate is removed from the aforementioned process. The second action is to open the fourth switch before a certain time elapses after the substrate is moved into the processing chamber. The control valve closes the fifth on-off control valve, and thereafter, until the substrate is removed from the processing chamber, the fifth on-off control valve is opened and the fourth on-off control valve is closed.
O:\89\89957DOC -13 - 1236050 申清專利犯圍第5項之發明係一種基板處理裝置,其具 備.處理室’其可進行基板的處理;基板搬送手段,其可 在處理室内搬送基板;A口噴嘴,其可將簾幕狀清洗液嗔 出至配設於前述處理室人σ附近的基板上面;上部喷嘴及 下部嘴嘴,其可在前述處理室内’夾有基板搬送路而分別 在其上方及下方沿著基板搬送路而連設,並將清洗液喷出 至基板上面及下面;第一至第三清洗液供應配管,其可分 別連通前述入口喷嘴、前述上部噴嘴及下部喷嘴;及清洗 液供應手&,其可通過前述各清洗液供應配管而將清洗液 分別供應至前述入口喷嘴、前述上部喷嘴及下部噴嘴,豆 特徵係進一步具備:第一至第三開關控制閥,其係分別插 入前述第一至第三清洗液供應配管、排液用配管,其用以 將可從前述處理室底部排出之使用過的清洗液廢棄、第四 開關控制閥,其係插入前述排液用配管、回收用配管,其 用以回收使用過的清洗液、第五開關控制閥,其係插入前 述回收用配管、回收槽,其用以將從前述處理室底部通過 前述回收用配管而排出之使用過的清洗液回收、計測手 段,其用以持續計測可顯示從前述處理室底部所排出使用 過的清洗液中所含的胺量、及控制手段,其用以控制前述 第一至第五開關控制閥的各個開關動作;可搬送至前述處 理室之基板係剝離處理後的基板,其上面係附著含胺之剝 離液;前述清洗液係在純水中溶解有二氧化碳之清洗液; 前述控制手段係分別控制:第一動作,其最初將基板搬入 前述處理室内時,打開前述第一開關控制閥與前述第二開 O:\89\89957.DOC -14- !236〇5〇 制閥’之後’直到基板從前述處理室内搬出,打開前 :弟二開關控制閥與前述第三開關控制閥;及第二動作上 脸:據來自前述計測手段的計測信號,當清洗液中所含的 4特定量以下’使所計測的指示值滿足特錢件前, …1則述第四開關控制閥並關閉前述第五開關控制間,當 述^相的指示值滿足料特定條件後直到基板從前述 处理室内搬出’打開前述第五開關控制閥並關閉前述第四 開關控制閥。 申請專利範圍第6項之發明在中請專利範圍第5項之基板 處理裝置中’前述指示值係PH值;前述第:動作係所計測 的pH值為特地值以下前,將插人前述排液用配管之開關控 制閥打開,並將插入前述回收用配管之開關控制閥關閉, 而所計測的PH值為特地值以下後直到基板從前述處理室内 搬f ’將插人前述回收用配管之開關控制閥打開,並將插 入所述排液用配管之開關控制閥關閉。 根據申請專利範圍第丨至3項之發明之基板處理方法,且 使用申明專利範圍第4至6項之發明之基板處理裝置時,最 初將基板搬入處理室内時,從前述入口噴嘴與前述上部噴 嘴將清洗液供應至基板,之後,直到基板從處理室内搬出, 由於清洗液只從上部喷嘴與下部噴嘴供應至基板,故與經 常從入口喷嘴、上部喷嘴與下部喷嘴供應清洗液至基板之 情況相比,清洗液的使用量變少。 申請專利範圍第1項之發明之基板處理方法中,且申請專 利範圍第4項之發明之基板處理裝置中,由於可從基板^入 O:\89\89957.DOC -15 - 1236050 處理至内經過特定時間以後,直到基板從前述處理室内搬 出,將從處理室底部排出之使用過的清洗液回收至回收槽 而再使用’故可更加減少作為清洗液之純水的使用量,且 減少二氧化碳的消耗量。另一方面,基板搬入處理室内後 經過特定時間前,可從處理室底部排出之使用過的清洗液 係可廢棄。此外,在基板搬入處理室内後經過特定時間之 時點中,由於利用清洗液沖洗附著於基板上面之剝離液的 大部分,故從基板搬入處理室内經過特定時間後,可從處 理室底部排出之使用過的清洗液大部分不含胺。如此,即 使將該使用過的清洗液回收至回收槽而再使用,回收槽内 的清洗液中殘留胺(腐蝕成份)的可能性很少。因此,對接下 來可進行沖洗處理的基板不會發生問題。 申請專利範圍第2項之發明之基板處理方法中,且申請專 利範圍第5項之發明之基板處理裝置中,持續計測用以顯示 可從處理室底部排出之使用過的清洗液中所含的胺量之指 示值,且當清洗液中所含的胺量為特定量以下而使所計測 的指示值為特定值以下或特定值以上時,亦即,可從基板 上將含胺之剝離液的大部分去除,由於可從處理室底部排 出之使用過的清洗液可回收至回收槽而再使用,故可更加 ^少作為清洗液之純水的使用量,且減少二氧㈣的消耗 篁。另-方面,當清洗液中所含的胺量為特定量以下使所 計測的指示值為特定值以下或特定值以上前,可從處理室 底部排出之㈣過的清洗液係可廢棄。此外,由於清洗液 中所含的胺量為特定量以下而使所計測的指示值為特定值O: \ 89 \ 89957DOC -13-1236050 The invention of claim 5 of the patent offense is a substrate processing apparatus, which includes a processing chamber, which can process substrates, and a substrate transfer method, which can transfer substrates in the processing chamber. ; A-port nozzle, which can scoop out the curtain-shaped cleaning liquid onto the substrate arranged near the person σ in the processing chamber; the upper nozzle and the lower nozzle, which can be sandwiched by the substrate transport path in the processing chamber, respectively Above and below it are connected along the substrate conveying path, and the cleaning liquid is sprayed onto the top and bottom of the substrate. The first to third cleaning liquid supply pipes can communicate with the inlet nozzle, the upper nozzle, and the lower nozzle, respectively. ; And a cleaning liquid supply hand & which can supply the cleaning liquid to the inlet nozzle, the upper nozzle, and the lower nozzle through the respective cleaning liquid supply pipes, and the bean characteristic further includes: first to third switching control valves , Which are respectively inserted into the aforementioned first to third cleaning liquid supply piping and drainage piping, and are used to discard the used cleaning liquid that can be discharged from the bottom of the processing chamber The fourth switch control valve is inserted into the aforementioned draining pipe and the recovery pipe to recover the used cleaning liquid, and the fifth switch control valve is inserted into the aforementioned recovery pipe and the recovery tank. The used cleaning liquid recovery and measurement means discharged from the bottom of the processing chamber through the recovery piping is used to continuously measure and display the amount of amine contained in the used cleaning liquid discharged from the bottom of the processing chamber, and A control means for controlling the opening and closing operations of the first to fifth on-off control valves; the substrate that can be transported to the processing chamber is a substrate after peeling treatment, and an amine-containing peeling liquid is attached to the substrate; the cleaning liquid is A cleaning solution in which carbon dioxide is dissolved in pure water; the aforementioned control means respectively control: the first action, when the substrate is first moved into the processing chamber, the first on-off control valve and the second on-off valve are opened O: \ 89 \ 89957 .DOC -14-! 235.050 valve 'after' until the substrate is removed from the aforementioned processing chamber, before opening: the second on-off control valve and the third on-off control valve; And the second action: According to the measurement signal from the aforementioned measurement means, when the specified value contained in the cleaning liquid is less than 4 specific levels, before the measured value of the measurement satisfies the special money,… 1, the fourth switching control valve is described and Close the fifth switch control room, and when the phase indicated value satisfies specific conditions until the substrate is removed from the processing chamber, open the fifth switch control valve and close the fourth switch control valve. For the invention in the sixth scope of the patent application, in the substrate processing device in the fifth scope of the patent application, the aforementioned indication value is the PH value; before the aforementioned: the pH value measured by the action system is below the special value, insert it into the aforementioned row The on-off control valve of the liquid piping is opened, and the on-off control valve inserted into the recovery piping is closed, and the measured pH value is below the special value until the substrate is removed from the processing chamber. The on-off control valve is opened, and the on-off control valve inserted into the drainage pipe is closed. When the substrate processing method according to the inventions in claims No. 丨 to No. 3 is applied, and if the substrate processing apparatus in nos. Nos. 4 to 6 is used, when the substrate is first moved into the processing chamber, the inlet nozzle and the upper nozzle are used. The cleaning liquid is supplied to the substrate, and thereafter, until the substrate is removed from the processing chamber. Since the cleaning liquid is only supplied to the substrate from the upper nozzle and the lower nozzle, it is different from the case where the cleaning liquid is often supplied to the substrate from the inlet nozzle, the upper nozzle, and the lower nozzle. In contrast, the amount of cleaning liquid used is reduced. In the substrate processing method for the invention in the scope of patent application No. 1 and in the substrate processing apparatus for the invention in scope of patent application No. 4, since the substrate can be processed into O: \ 89 \ 89957.DOC -15-1236050 After a certain period of time, until the substrate is removed from the aforementioned processing chamber, the used cleaning liquid discharged from the bottom of the processing chamber is recovered to a recovery tank and reused. Therefore, the amount of pure water used as a cleaning liquid can be further reduced, and carbon dioxide can be reduced. Consumption. On the other hand, the used cleaning liquid that can be discharged from the bottom of the processing chamber before a certain time elapses after the substrate is carried into the processing chamber can be discarded. In addition, when a specific time elapses after the substrate is carried into the processing chamber, most of the peeling liquid attached to the substrate is rinsed with a cleaning solution. Therefore, the substrate can be discharged from the bottom of the processing chamber after a specific time has passed since the substrate was carried into the processing chamber. Most used cleaning fluids are amine-free. In this way, even if the used cleaning liquid is recovered in a recovery tank and reused, there is little possibility that amines (corrosive components) remain in the cleaning liquid in the recovery tank. Therefore, there is no problem with the substrates that can be processed after being docked. In the substrate processing method of the invention in the scope of patent application No. 2 and in the substrate processing apparatus in the scope of patent application No. 5, the continuous measurement is used to display the content of the used cleaning liquid that can be discharged from the bottom of the processing chamber. When the amount of amine is indicated, and when the amount of amine contained in the cleaning solution is less than or equal to the specified amount, the measured value is less than or equal to the specified value, that is, the amine-containing peeling liquid can be removed from the substrate Most of the removal is because the used cleaning liquid that can be discharged from the bottom of the processing chamber can be recovered and reused in the recovery tank, so the amount of pure water used as the cleaning liquid can be reduced, and the consumption of dioxin can be reduced. . On the other hand, when the amount of amine contained in the cleaning solution is less than a specific amount and the measured indication value is less than or equal to the specific value, the washed cleaning solution that can be discharged from the bottom of the processing chamber may be discarded. In addition, because the amount of amine contained in the cleaning solution is less than a specific amount, the measured indicator value is a specific value
Ο \89\89957 DOC -16- 1236050 或特疋值以上後,由於可從處理室底部排出之使用過 的=洗液大部分不含胺,故即使將該使用過的清洗液回收 收槽而再使用,回收槽内的清洗液中殘留胺(腐蝕成份) 的可忐性彳艮少。因此,對接下來可進行沖洗處理的基板不 會發生問題。 申叫專利範圍第3項之發明之基板處理方法中,且申請專 範圍第6項之發明之基板處理裝置中,持續計測可從處理 &邛排出之使用過的清洗液的pH值,當所計測的值為 特定值以下時,可從處理室底部排出之使用過的清洗液可 回收至回收槽而再制。另—方面,所計測的p雌為特定 值以下前,可從處理室底部排出之使用過的清洗液係可廢 棄。 【實施方式】 以下,參照圖1及圖2說明本發明之最佳實施形態。 圖1係顯示本發明實施形態之一例,其係顯示基板處理裝 置之概略構成的模式正面剖面圖。該圖中,只顯示水洗處 理部。在水洗處理部10的前段側係設有剝離處理部,其係 與水洗處理部10相鄰接,但由於上述已說明剝離處理部, 故在此省略說明。 水洗處理部10具備處理室12,其具有入口側開口丨4及出 口側開口 1 6,在處理室1 2内部係配設滾軸輸送機丨8,其以 水平姿勢或稍微傾斜姿勢支持基板W而往水平方向搬送。 將表面附著有剝離液1之狀態的基板W從剝離處理部搬送 至水洗處理部10。在處理室12的入口側開口 14附近係配設 O:\89\89957 DOC -17- 1236050 入口喷嘴20,其用以將簾幕狀清洗液噴出至基板w上面。 此外,夾有基板搬送路而分別在其上方及下方沿著基板搬 送路而連設上部喷嘴22及下部喷嘴24。該等構成係與上述 以往之裝置相同。 入口喷嘴20、上部喷嘴22及下部喷嘴24係分別連通清洗 液供應配管26 ' 28、30,在各清洗液供應配管26、28、3〇 係分別插入有開關控制閥Vi、VP V3。各清洗液供應配管 26、28、30分別連通配管32a,配管32a係流路連接於泵“ 的噴出口側。泵34的吸入口側經由配管3213而流路連接於儲 存有純水2之儲水槽36底部。接著,在配管32&中途插入氣 版/合解模件3 8,並使連接儲氣瓶等碳酸氣體供應源之氣體 供應管40連接於氣體溶解模件%,以使二氧化碳溶解於可 通過配官32a而送至清洗液供應配管26、28、3〇之純水中。 另外,於純水中溶解二氧化碳之手段並不限於在配管Ua中 途插入氣體溶解模件38之構成,也可為任何構成,例如, 於儲存於槽内的純水中使:氧化碳起泡,也可製造溶解有 一氧化碳之純水。 在處理室12底部,連通有液流出管42,液流出管42係分 歧為回收用配管44與排液用配f46。回收用配管料的前端 流出口係導入儲水槽36内。此外,通過排液用配管46可廢 棄使用過的β洗液。在回收用配管44與排液用配管Μ分別 插入有開關控制閥v4、v5。再者,在液流出管42係插入ρΗ 計48 ’其用以持續計測可流經内部之使料的清洗液的pH 值。來自邱計48的計測信號係輸入控制器50。X,從控制〇 \ 89 \ 89957 DOC -16-1236050 or above, because the used = lotion that can be discharged from the bottom of the processing chamber does not contain amine, so even if the used washing liquid is recovered and collected, When reused, the residual amine (corrosive component) in the cleaning solution in the recovery tank is less susceptible. Therefore, there is no problem with a substrate that can be processed next. In the substrate processing method claimed for the invention in the third scope of the patent, and in the substrate processing apparatus for the sixth scope of the invention, the pH value of the used cleaning liquid that can be discharged from the process & is continuously measured. When the measured value is less than a specific value, the used cleaning liquid that can be discharged from the bottom of the processing chamber can be recovered to a recovery tank and reprocessed. On the other hand, the used cleaning liquid that can be discharged from the bottom of the processing chamber before the measured p female is below a certain value can be discarded. [Embodiment] Hereinafter, a preferred embodiment of the present invention will be described with reference to Figs. 1 and 2. Fig. 1 is a schematic front sectional view showing an example of an embodiment of the present invention and showing a schematic configuration of a substrate processing apparatus. In the figure, only the water washing processing unit is shown. A peeling processing section is provided on the front side of the water-washing processing section 10, which is adjacent to the water-washing processing section 10. However, since the peeling-processing section has been described above, the description is omitted here. The water-washing processing unit 10 includes a processing chamber 12 having an inlet-side opening 4 and an outlet-side opening 16. A roller conveyor 8 is arranged inside the processing chamber 12 and supports the substrate W in a horizontal posture or a slightly inclined posture. And carry it horizontally. The substrate W with the peeling liquid 1 attached to its surface is transferred from the peeling processing section to the water washing processing section 10. An O: \ 89 \ 89957 DOC -17-1236050 inlet nozzle 20 is provided near the inlet-side opening 14 of the processing chamber 12 and is used to spray a curtain-like cleaning liquid onto the substrate w. In addition, an upper nozzle 22 and a lower nozzle 24 are connected along the substrate conveying path above and below the substrate conveying path, respectively. These structures are the same as those of the conventional devices described above. The inlet nozzle 20, the upper nozzle 22, and the lower nozzle 24 communicate with the cleaning liquid supply pipes 26 '28 and 30, respectively, and the on-off control valves Vi and VP V3 are inserted into the cleaning liquid supply pipes 26, 28, and 30, respectively. Each cleaning liquid supply piping 26, 28, 30 communicates with a piping 32a, and the piping 32a is connected to the discharge port side of the pump. The suction port side of the pump 34 is connected to the reservoir storing pure water 2 through the piping 3213. The bottom of the water tank 36. Next, insert the gas plate / disassembly module 38 into the pipe 32 & and connect the gas supply pipe 40 connected to a carbon dioxide gas supply source such as a gas cylinder to the gas dissolution module% to dissolve carbon dioxide. In pure water that can be sent to the cleaning liquid supply piping 26, 28, and 30 through the piping unit 32a. In addition, the means for dissolving carbon dioxide in pure water is not limited to a configuration in which a gas dissolution module 38 is inserted halfway through the piping Ua. It can also have any structure, for example, foaming pure carbon dioxide in pure water stored in the tank, or manufacturing pure water in which carbon monoxide is dissolved. At the bottom of the processing chamber 12, a liquid outflow pipe 42 and a liquid outflow pipe are communicated. The 42 system is divided into a recovery pipe 44 and a drainage pipe f46. The front-end outlet of the recovery pipe material is introduced into the water storage tank 36. In addition, the used β washing solution can be discarded through the drainage pipe 46. For recycling For piping 44 and drainage The piping M is respectively inserted with the switch control valves v4 and v5. In addition, a pH meter 48 is inserted into the liquid outflow pipe 42 to continuously measure the pH value of the cleaning liquid that can flow through the interior of the material. The measurement signal is input to the controller 50. X, from the control
O:\89\89957.DOC -18- 1236050 為50可傳运控制信號至開關控制閥%〜V)·,並利用該控制 信號控制各開關控制閥Vi〜v5的開關動作。 — 此外’設有用以導入前端流出口至儲水槽48内之純水供 應用配管52 ’其使純水從純水供應源通過純水供應用配管 52而適當供應至儲水槽48内。另外,關於圖3,如上所述, 在水洗處理部10的下流側連設有複數水洗處理部時,可將 從位於最下流側之水洗處理部依序送至位於上流側之各水 洗處理部的儲水槽内之使用過的純水供應至水洗處理部1〇 的儲水槽4 8内。 其次’參照圖1所示的流程說明圖1所示構成之水洗處理 部1 0中處理動作的一例。另外,該處理動作中,也可在液 流出管42不先附設pH計48。 將表面附著有剝離液丨之狀態的基板W從剝離處理部搬 送至水洗處理部1 〇,基板w通過入口側開口丨4而搬入水洗 處理部10的處理室12内。此時,將開關控制閥Vi、V2、% 打開,並將開關控制閥Vs、%關閉。因此,分別只從入口 喷鳴20與上部嗜嘴22噴出清洗液,而不從下部噴嘴24嗔出 清洗液。接著,已搬入處理室12内之基板…藉由從入口喷 鳴2 0所|出的簾幕狀清洗液,沖洗附著於表面之剝離液厂 的大部分。此外,藉由從上部噴嘴22喷出至基板w表面之 清洗液,沖洗殘留於基板w表面之剥離液丨。此時,基板w 上可產生包含胺之剝離液與清洗液(純水)相混合之溶液,但 由於清洗液中溶解有二氧化碳,故中和胺之鹼性可防止溶 液形成強驗性。O: \ 89 \ 89957.DOC -18- 1236050 is a 50-percent control signal that can be transmitted to the on-off control valve (% ~ V) ·, and uses this control signal to control the on-off operations of each on-off control valve Vi ~ v5. — In addition, 'a pure water supply application pipe 52 for introducing the front-end outflow into the water storage tank 48' is provided, which allows pure water to be appropriately supplied into the water storage tank 48 from the pure water supply source through the pure water supply pipe 52. In addition, as shown in FIG. 3, when a plurality of washing treatment units are provided downstream of the washing treatment unit 10 as described above, the washing treatment units located on the most downstream side can be sequentially sent to each washing treatment unit located on the upstream side. The used pure water in the water storage tank is supplied to the water storage tank 48 of the water washing treatment unit 10. Next, an example of the processing operation in the water-washing processing unit 10 having the configuration shown in Fig. 1 will be described with reference to the flowchart shown in Fig. 1. In this processing operation, the liquid outflow pipe 42 may not be provided with a pH meter 48 first. The substrate W with the peeling liquid 丨 attached on its surface is transferred from the peeling processing section to the water washing processing section 10, and the substrate w is carried into the processing chamber 12 of the water washing processing section 10 through the inlet-side opening 4. At this time, the on-off control valves Vi, V2 and% are opened, and the on-off control valves Vs and% are closed. Therefore, only the cleaning liquid is sprayed from the inlet nozzle 20 and the upper nozzle 22, and the cleaning liquid is not sprayed from the lower nozzle 24. Next, the substrates that have been carried into the processing chamber 12 are washed by a curtain-like cleaning solution sprayed from the inlet 20, and the majority of the peeling liquid factory attached to the surface is rinsed. In addition, the cleaning liquid ejected from the upper nozzle 22 to the surface of the substrate w rinses the peeling liquid remaining on the surface of the substrate w. At this time, a solution in which a stripping solution containing amine and a cleaning solution (pure water) are mixed can be generated on the substrate w. However, since carbon dioxide is dissolved in the cleaning solution, neutralizing the alkalinity of the amine can prevent the solution from forming strong sensitivity.
O:\89\89957.DOC -19- 1236050 利用滾軸輸送機18進一步搬送基❹,當基㈣完全通過 入口育嘴2G的正下方位置時,在打開開關控制閥%、%丄 且關閉開關控制閥V4之狀態下,_閉開關控制閥%,另一 方面,打開開關控制閥V3。因此,可分別只從上部喷嘴22 與下口P貝嘴24喷出清洗液,並停止從入口喷嘴2〇喷出清洗 液。接著,可由滾軸輸送機18搬送至處理室12内之基板w, 藉由k上部噴嘴22所噴出的清洗液,可大部分沖洗殘留於 基板w表面上的剝離液丨。此外,藉由從下部喷嘴24噴出至 基板W下面之清洗液,可沖洗包覆於基板界下面側之剝離液 卜另外,關閉開關控制閥%的同時不一定打開開關控制閥 V3 ’也可先將開關控制閥%打開,之後再關閉開關控制閥O: \ 89 \ 89957.DOC -19- 1236050 Use the roller conveyor 18 to further transport the base cymbals. When the base cymbals have completely passed the position directly below the inlet nozzle 2G, the on / off control valve is opened, the% and the switch is closed. In the state of the control valve V4, the on-off control valve is closed, and on the other hand, the on-off control valve V3 is opened. Therefore, the cleaning liquid can be ejected only from the upper nozzle 22 and the lower nozzle P24, and the spraying of the cleaning liquid from the inlet nozzle 20 can be stopped. Next, the substrate w in the processing chamber 12 can be transported by the roller conveyor 18, and most of the peeling liquid remaining on the surface of the substrate w can be washed by the cleaning liquid sprayed from the upper nozzle 22 of the k. In addition, the cleaning liquid sprayed from the lower nozzle 24 to the lower surface of the substrate W can wash the peeling liquid coated on the lower side of the substrate boundary. In addition, the switching control valve V3 'may not necessarily be opened at the same time that the switching control valve V% is closed. Open the on / off control valve%, and then close the on / off control valve
Vi 〇 從基板W搬入處理室'12内之該時點前,由於打開開關控 制閥V5,故可分別從入口喷嘴20、上部喷嘴22及下部喷嘴 24喷出至基板w,且從基板w上往處理室以底部流下之使用 過的清洗液,可從處理室12底部流出至液流出管42,並從 液流出官42通過排液用配管46而廢棄。接著,藉由可分別 從上部噴嘴22及下部喷嘴24喷出至基板W的上·下兩面之 清洗液’在從基板…將剝離液1大部分沖掉之時點,於打開 開關控制閥V2、V3,且關閉開關控制閥Vl的狀態下,關閉 開關控制閥Vs,另一方面,打開開關控制閥v4。如此,使 用過的清洗液從處理室12底部通過液流出管42及回收用配 管44而流入儲水槽36内,並與儲水槽36内的純水2相混合。 該時點中’由於利用清洗液將附著於基板W上面之剝離液1Vi 〇 Before the time when the substrate W is carried into the processing chamber '12, the opening and closing control valve V5 is opened, so that the nozzles can be ejected from the inlet nozzle 20, the upper nozzle 22, and the lower nozzle 24 to the substrate w, and upward from the substrate w. The used cleaning liquid flowing down from the bottom of the processing chamber can flow out from the bottom of the processing chamber 12 to the liquid outflow pipe 42, and can be discarded from the liquid outflow pipe 42 through the liquid discharge pipe 46. Then, the cleaning liquid 'can be ejected from the upper nozzle 22 and the lower nozzle 24 to the upper and lower surfaces of the substrate W, and when the peeling liquid 1 is mostly washed away from the substrate ..., the on-off control valve V2 is opened. V3, and the switch control valve V1 is closed, the switch control valve Vs is closed, and on the other hand, the switch control valve v4 is opened. In this way, the used cleaning liquid flows from the bottom of the processing chamber 12 through the liquid outflow pipe 42 and the recovery pipe 44 into the water storage tank 36, and is mixed with the pure water 2 in the water storage tank 36. At this point ', since the peeling liquid 1 attached to the upper surface of the substrate W is cleaned by the cleaning liquid
O:\89\89957.DOC -20- 1236050 的大W刀冲洗並通過排液用配管4 6而廢棄,故使用過的清 洗液幾乎不含有胺。如此,即使使用過的清洗液回到儲水 槽36,在儲水槽36内的清洗液(純水2)混入胺的可能性很 少。因此,在可沖洗處理的基板中不會發生問題。 通過上部喷嘴22及下部噴嘴24時,藉由分別從上部喷嘴 22及下部喷嘴24所嘴出的清洗液沖洗並洗掉附著於表面的 剝離液1之基板w,可從水洗處理部10的處理室丨2内通過出 口側開口 16而搬出,並搬送至鄰接的水洗處理部等。從處 理室12内搬出基板料,開關控制間%持續打開的狀態, 並將開關控制閥v 3、v 4關閉,另—方面,將開關控制間v ^、 V5打開’回到最初的狀態。其次’將應沖洗處理之剝離處 理後的基板W搬送至水洗處理部1〇,再反覆進行上述的處 理動作。 上述的處理動作中’係在考慮從基板频人處理室厂内 經過特定時間,從基板W幾乎沖掉剝離心之時點,藉由切 換開關控制閥v4、v5的開關動作,於該時點前使通過排液 用配管46而廢棄之使用過的清洗液通過回收用配管44而流 入储水槽36内回收,但也可藉由從處理室12底部流出之使 2的清洗液的PH值變化,切換開關控制閥I%的開關 乍。亦即,隨沖洗處理的進行,沖洗基板W上的剝離液i :’會減少胺量,且在從基板W上猶微去除剝離液1之時 ^,會使使用過的清洗液之pH佶僬舻卜4/Βί 入液流出管42之_,可持 =:側。因此 r ^ 了持π计測流動内部之使用過的 4液的PH值’將該計測信號送至控制器5〇,且在使用過O: \ 89 \ 89957.DOC -20- 1236050 The large W-knife is rinsed and discarded through the drainage pipe 46. Therefore, the used cleaning solution contains almost no amine. In this way, even if the used cleaning solution is returned to the water storage tank 36, there is little possibility that the cleaning solution (pure water 2) in the water storage tank 36 is mixed with the amine. Therefore, no problem occurs in the substrate that can be processed. When passing through the upper nozzle 22 and the lower nozzle 24, the substrate w of the peeling liquid 1 adhering to the surface is rinsed and washed away with the cleaning liquid from the upper nozzle 22 and the lower nozzle 24, respectively. The inside of the chamber 2 is carried out through the outlet-side opening 16 and is carried to an adjacent washing treatment unit or the like. The substrate material is taken out from the processing room 12, the switch control room% is continuously opened, and the switch control valves v3, v4 are closed, and the switch control rooms v ^, V5 are opened to return to the original state. Next, the substrate W after the peeling treatment to be rinsed is transferred to the water-washing treatment section 10, and the above-mentioned processing operation is repeatedly performed. In the above-mentioned processing operation, the point at which the peeling heart is almost washed out from the substrate W after a certain period of time has elapsed from the substrate in the processing room factory is considered, and the switching operation of the switching control valves v4 and v5 is switched by this time. The used cleaning liquid discarded through the drainage pipe 46 flows into the water storage tank 36 through the recovery pipe 44 to be recovered, but it can also be switched by changing the pH value of the 2 cleaning liquid by flowing out from the bottom of the processing chamber 12 On and off of the control valve I%. That is, as the washing process progresses, the stripping solution i: 'on the substrate W is washed to reduce the amount of amine, and when the stripping solution 1 is still slightly removed from the substrate W ^, the pH of the used cleaning solution is increased.僬 舻 卜 4 / Βί Into the liquid outflow pipe 42_, can hold =: side. Therefore, r ^ is used to measure the pH value of the used 4 fluids inside the flow ’and send the measurement signal to the controller 50.
DOC O:\89\8Q957 '21 - 1236050 的清洗液的pH值為偏酸性側之時點 ^號至開關控制閥V4、V5, 關控制閥V 5。如此,該時點 使用過的清洗液,可通過回 回收。 從控制器50傳送控制 以打開開關控制閥v4並關閉開 所通過排液用配管46而廢棄之 收用配管44而流入儲水槽3 6内 另外’上述實施形態中’係將用以計測從處理室12底部 排出之使用過的清洗液pH值之pP^t48插入液流出管42,但 除了 pH料,也可使用可檢出使用過的清洗液中所含胺量 的減少之檢測器,例如’也可設置用以檢測使用過的清洗 液的電傳導度或電阻率之檢測器。此外,使用該等檢測器, 於使用過的清洗液中所含胺量為特定值以下前,廢棄使用 過的清洗液,胺量為特定值以下後直到基板從處理室内搬 出,將使用過的清洗液回收至儲水槽(回收槽)後而再使用。 又,上述實施形態中,係說明在剝離處理後的沖洗處理 中使用本發明之例,但本發明也可使用於蝕刻處理後或顯 像處理後等所進行之沖洗處理。此外,在蝕刻處理後或顯 像處理後之沖洗處理中使用本發明時,由於不會產生由剝 離液中的胺使使用過的清洗液為鹼性,而溶解.腐蝕金屬 膜之問題,故不一定進行以下控制:常常將開關控制閥V4、 V5的一方全開或將另一方全關閉。 申明專利範圍第1至j項之基板處理方法中,且申請專利 範圍第4至6項之基板處理方法中,可進一步減少作為清洗 液之純水的使用量,且減少二氧化碳的消耗量。接著,即 O:\89\89957 DOC -22- 1236050 使回收使用過的清洗液而再使用,也不會在可沖洗處理之 基板發生問題。 【圖式簡單說明】 圖1係顯示本發明實施形態之一例,其係顯示基板處理裝 置之概略構成的模式正面剖面圖。 圖2係用以說明圖1所示基板處理裝置之水洗處理部中處 理動作一例的流程圖。 圖3係顯示具有可將溶解有二氧化碳的純水作為清洗液 用之水洗處理部之以往之基板處理裝置的概略構成一例的 模式正面圖。DOC O: \ 89 \ 8Q957 '21-1236050 The pH value of the cleaning solution is on the acidic side ^ to switch control valves V4 and V5, and close control valve V5. In this way, the used cleaning liquid at this point can be recovered by recycling. The control is transmitted from the controller 50 to open the on-off control valve v4 and close the opening to the receiving pipe 44 discarded through the drain pipe 46 and flow into the water storage tank 36. In addition, in the above-mentioned embodiment, it will be used to measure The pP ^ t48 of the pH value of the used cleaning solution discharged from the bottom 12 is inserted into the liquid outflow tube 42, but in addition to the pH material, a detector that can detect a decrease in the amount of amine contained in the used cleaning solution can be used, such as' A detector for detecting the electrical conductivity or resistivity of the used cleaning solution may also be provided. In addition, with these detectors, the used cleaning solution is discarded before the amount of amine contained in the used cleaning solution is below a certain value. After the amount of amine is below a certain value, the substrate is removed from the processing chamber. The cleaning solution is recycled to the water storage tank (recovery tank) and then reused. In the above-mentioned embodiment, an example of using the present invention in the rinsing process after the peeling process was described. However, the present invention can also be applied to the rinsing process performed after the etching process or after the development process. In addition, when the present invention is used in the rinsing treatment after the etching treatment or the development treatment, since the used cleaning solution is made alkaline by the amine in the stripping solution and is dissolved, the problem of corroding the metal film is eliminated. The following control is not necessarily performed: Often, one of the switching control valves V4, V5 is fully opened or the other is fully closed. Among the substrate processing methods in the scope of claims 1 to j, and the substrate processing methods in the scope of patent applications 4 to 6, the amount of pure water used as a cleaning solution can be further reduced, and the consumption of carbon dioxide can be reduced. Then, O: \ 89 \ 89957 DOC -22-1236050 allows the used cleaning liquid to be recovered and reused, and no problem will occur on substrates that can be processed. [Brief Description of the Drawings] Fig. 1 is a schematic front cross-sectional view showing an example of an embodiment of the present invention, showing a schematic configuration of a substrate processing apparatus. Fig. 2 is a flowchart for explaining an example of processing operations in a water washing processing section of the substrate processing apparatus shown in Fig. 1. Fig. 3 is a schematic front view showing an example of a schematic configuration of a conventional substrate processing apparatus having a water-washing processing section capable of using pure carbon dioxide dissolved pure water as a cleaning solution.
【圖式代表符號說明 W 基板 剝離液 2 純水 10 12 14 16 18 20 22 24 26 、 28 、 30 32a、32b 水洗處理部 處理室 處理室的入口側開口 處理室的出口側開口 滾軸輸送機 入口喷嘴 上部噴嘴 下部喷嘴 清洗液供應配管 配管[Schematic representation of symbol W substrate peeling liquid 2 pure water 10 12 14 16 18 20 22 24 26, 28, 30 32a, 32b Washing treatment unit processing chamber processing chamber inlet side opening processing chamber outlet side opening roller conveyor Inlet nozzle Upper nozzle Lower nozzle Cleaning liquid supply piping
O:\89\89957 DOC -23 - 1236050 34 泵 36 儲水槽 38 氣體溶解模件 40 氣體供應管 42 液流出管 44 回收用配管 46 排液用配管 48 pH計 50 控制器 52 純水供應用配管 Vr V5 開關控制閥 O:\89\89957 DOC ~ 24 -O: \ 89 \ 89957 DOC -23-1236050 34 Pump 36 Water storage tank 38 Gas dissolution module 40 Gas supply pipe 42 Liquid outflow pipe 44 Recovery pipe 46 Liquid discharge pipe 48 pH meter 50 Controller 52 Pure water supply pipe Vr V5 On-off Control Valve O: \ 89 \ 89957 DOC ~ 24-
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JPH10186342A (en) * | 1996-12-25 | 1998-07-14 | Toshiba Corp | Cleaning device for substrate |
JP3336952B2 (en) * | 1998-05-13 | 2002-10-21 | 信越半導体株式会社 | Wastewater separation and recovery equipment in wafer cleaning equipment |
JP2000286224A (en) * | 1999-03-30 | 2000-10-13 | Dainippon Screen Mfg Co Ltd | Substrate treating apparatus |
CN1327888A (en) * | 2000-06-09 | 2001-12-26 | 株式会社平间理化研究所 | Treater for substrate surface |
JP2002141269A (en) * | 2000-11-01 | 2002-05-17 | Dainippon Screen Mfg Co Ltd | Substrate-processing system and method |
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2003
- 2003-03-12 JP JP2003066299A patent/JP2004273984A/en not_active Abandoned
- 2003-12-24 TW TW092136698A patent/TWI236050B/en not_active IP Right Cessation
-
2004
- 2004-02-27 KR KR1020040013329A patent/KR100556626B1/en not_active IP Right Cessation
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI759676B (en) * | 2019-02-19 | 2022-04-01 | 日商斯庫林集團股份有限公司 | Substrate processing apparatus and substrate processing method |
Also Published As
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KR100556626B1 (en) | 2006-03-06 |
KR20040080980A (en) | 2004-09-20 |
JP2004273984A (en) | 2004-09-30 |
TW200426912A (en) | 2004-12-01 |
CN1531029A (en) | 2004-09-22 |
CN1299334C (en) | 2007-02-07 |
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