TWI759676B - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

A substrate processing apparatus (1) includes a substrate holding part (31), a chemical solution supply part, a rinsing liquid supply part, and a rinsing liquid purification part (6). The substrate holding part (31) holds a substrate (9) in a horizontal state. The chemical solution supply part supplies a chemical solution to the substrate (9) during the chemical solution process of the substrate (9). The rinsing liquid supply part supplies the rinsing liquid to the substrate (9) during the rinsing process of the substrate (9). The rinsing liquid purification part (6) performs a purification process including dilution on an used rinsing liquid used in the rinsing process to generate a reusable regenerating rinsing liquid. Thereby, a used rinsing liquid can be regenerated.

Description

Substrate processing apparatus and substrate processing method

The present invention relates to a substrate processing apparatus and a substrate processing method.

Conventionally, in a manufacturing process of a semiconductor substrate (hereinafter simply referred to as a "substrate"), various treatments have been applied to the substrate. For example, in a batch-type substrate processing apparatus disclosed in Japanese Patent Laid-Open No. 2010-287591 (Document 1), a plurality of (for example, fifty) substrates are immersed in a chemical solution in a processing tank, and the chemical solution is carried out. After the treatment, the chemical solution in the treatment tank is replaced with pure water, and a rinse treatment for immersing the substrate in the pure water is performed. In this substrate processing apparatus, when the concentration of the drain liquid discharged from the processing tank becomes smaller than a predetermined concentration during the cleaning process, the drain liquid is recovered and reused. Document 1 proposes a technique of increasing the recovery amount of the drained liquid and reducing the use amount of pure water by separately recovering the drained liquid during the cleaning process according to the type of the chemical solution used in the chemical solution treatment.

However, in the substrate processing apparatus of Document 1, since the drained liquid is discarded until the concentration of the drained liquid is reduced to a predetermined concentration that can be reused, there is a limit to the increase in the recovery amount of the drained liquid. In addition, in Document 1, a blade-type substrate processing apparatus for processing substrates one by one is not considered.

The present invention focuses on a blade-type substrate processing apparatus, and aims to regenerate a used cleaning solution.

A substrate processing apparatus according to a preferred aspect of the present invention includes: a substrate holding part for holding the substrate in a horizontal state; a chemical solution supplying part for supplying the chemical solution to the substrate during the chemical solution treatment of the substrate; a cleaning solution a supply unit for supplying a cleaning solution to the substrate during the cleaning process of the substrate; and a cleaning solution purification unit for performing a purification process including dilution on a used cleaning solution that has been used in the cleaning process and is a used cleaning solution , and generate reusable regenerative cleaning fluid. Thereby, the used cleaning liquid can be regenerated.

Preferably, the cleaning solution refining unit includes a first refining unit for performing the cleaning treatment after the chemical solution treatment in the case where the chemical solution used in the chemical solution treatment is alkaline The above-mentioned cleaning solution used in the above-mentioned purification process is carried out; and the second refining part is used in the above-mentioned chemical solution. The above-mentioned cleaning liquid used for the above-mentioned purification treatment has been carried out.

Preferably, the substrate processing apparatus is further provided with: a substrate rotation mechanism for rotating the substrate holding portion around a center axis facing the up-down direction as a center; and a cup portion for surrounding the periphery of the substrate for receiving It catches the liquid scattered from the rotating substrate. The cover portion includes a first cover that catches scattering from the substrate to the surrounding during the cleaning process after the chemical treatment when the chemical used in the chemical treatment is alkaline. the cleaning solution; the second cover, in the case where the chemical solution used in the chemical solution treatment is acidic, catches the cleaning solution scattered from the substrate to the surrounding during the cleaning process after the chemical solution treatment; and a cover switching mechanism for moving at least one of the first cover and the second cover relative to the substrate holding portion in the up-down direction, thereby switching either the first cover or the second cover A cover is selectively arrange|positioned at the side of the said board|substrate.

Preferably, the substrate processing apparatus further includes a conductivity measuring unit that measures the conductivity of the used cleaning solution. In a state where the measured value of the electrical conductivity measuring unit is larger than a predetermined threshold value, the used cleaning liquid system is discarded and the purification treatment is not performed. When the measured value of the electrical conductivity measuring section becomes equal to or less than the threshold value, the used cleaning liquid system is guided to the cleaning liquid refining section, and the refining process is performed.

Preferably, the regeneration cleaning solution is supplied to the substrate during the cleaning process.

Preferably, the cleaning solution supply unit includes an unused cleaning solution ejection unit for ejecting the unused cleaning solution toward the substrate, and an unused cleaning solution piping for sending the unused cleaning solution from a supply source to the The unused cleaning solution ejection part guides; the regeneration cleaning solution ejection part ejects the regeneration cleaning solution toward the substrate; and the regeneration cleaning solution piping is independent from the unused cleaning solution piping, and is used for removing the regeneration cleaning solution from the cleaning solution refining part. The regeneration cleaning liquid is guided toward the regeneration cleaning liquid ejection portion.

The present invention also focuses on substrate processing methods. A substrate processing method according to a preferred aspect of the present invention includes: step (a), holding the substrate in a horizontal state; step (b), supplying a chemical solution to the substrate and performing chemical solution treatment; step (c) is to supply the cleaning solution to the substrate after the aforementioned step (b) and perform cleaning treatment; and step (d) is to apply the used cleaning solution to the used cleaning solution that has been used in the aforementioned step (c) and belongs to the used cleaning solution Purification including dilution is carried out to generate reusable regenerated cleaning fluid. Thereby, the used cleaning liquid can be regenerated.

Preferably, in the step (d), when the chemical solution used in the chemical solution treatment is alkaline, the used cleaning solution is subjected to the purification treatment in the first purification section; When the chemical solution used in the chemical solution treatment is acidic, the used cleaning solution is subjected to the purification treatment in a second purification section different from the first purification section.

Preferably, in the said process (c), the said cleaning liquid system is supplied to the said board|substrate which rotates about the center axis|shaft which goes to an up-down direction as a center. When the chemical solution used in the above-mentioned step (b) is alkaline, the cleaning solution scattered from the rotating substrate to the surroundings is caught by the first cover surrounding the periphery of the substrate; in the above-mentioned step (b) When the chemical solution used in b) is acidic, the cleaning solution scattered from the rotating substrate to the surroundings is caught by the second cover surrounding the substrate.

Preferably, the substrate processing method further includes a step (e) of measuring the electrical conductivity of the used cleaning solution before the step (d). In a state where the measured value in the step (e) is larger than a predetermined threshold value, the used cleaning liquid system is discarded and the step (d) is not performed. When the measured value in the aforementioned step (e) becomes equal to or less than the aforementioned threshold value, the aforementioned step (d) is performed.

Preferably, the regeneration cleaning liquid is supplied to the substrate in the step (c).

Preferably, in the said step (c), a cleaning liquid is supplied to the said substrate from a cleaning liquid supply part. The cleaning solution supply unit includes an unused cleaning solution ejection unit for ejecting the unused cleaning solution toward the substrate, and an unused cleaning solution piping for sending the unused cleaning solution from a supply source to the unused cleaning solution The ejection part guides; the regeneration cleaning solution ejection part ejects the regeneration cleaning solution toward the substrate; and the regeneration cleaning solution piping is independent from the unused cleaning solution piping and is used for ejecting the regeneration cleaning solution toward the regeneration cleaning solution Ministry guide.

The above object and other objects, features, aspects, and advantages will become apparent from the detailed description of the invention performed below with reference to the accompanying drawings.

FIG. 1 is a side view showing the configuration of a substrate processing apparatus 1 according to one embodiment of the present invention. The substrate processing apparatus 1 is a blade-type apparatus for processing semiconductor substrates 9 (hereinafter simply referred to as "substrates 9") one by one. The substrate processing apparatus 1 supplies and processes the substrate 9 with a processing liquid. A part of the structure of the substrate processing apparatus 1 is shown in cross section in FIG. 1 .

The substrate processing apparatus 1 includes a substrate holding portion 31 , a substrate rotating mechanism 33 , a cover portion 4 , a processing liquid supply portion 5 , a cleaning liquid refining portion 6 , and a housing 11 . The substrate holding portion 31 , the substrate rotating mechanism 33 , the cover portion 4 , and the like are accommodated in the inner space of the casing 11 . The cleaning liquid refining unit 6 is arranged outside the casing 11 .

The substrate holding portion 31 faces the main surface (ie, the lower surface) of the lower side of the substrate 9 in a horizontal state, and holds the substrate 9 from the lower side. The substrate holding portion 31 is, for example, a mechanical chuck for mechanically supporting the substrate 9 . The substrate holding portion 31 is provided so as to be rotatable about the center axis J1 in the vertical direction.

The substrate holding portion 31 includes a holding portion main body and a plurality of chuck pins. The holding part body is a substantially disc-shaped member, and faces the lower surface of the base plate 9 . A plurality of jig pins are arranged in the circumferential direction (hereinafter simply referred to as "circumferential direction") with the center axis J1 as the center in the peripheral edge portion of the holder body at approximately equal angular intervals. Each jig pin protrudes upward from the upper surface of the holder body and contacts the peripheral region and side surface of the lower surface of the base plate 9 and supports the base plate 9 . In addition, the substrate holding portion 31 may be a vacuum jig or the like for sucking and holding the central portion of the lower surface of the substrate 9 .

The substrate rotation mechanism 33 is arranged below the substrate holding portion 31 . The substrate rotation mechanism 33 rotates the substrate 9 together with the substrate holding portion 31 around the central axis J1. The substrate rotation mechanism 33 includes, for example, an electric motor whose rotation shaft is connected to the holder body of the substrate holder 31 . The substrate rotation mechanism 33 may have other structures such as a hollow motor.

The processing liquid supply unit 5 supplies a plurality of types of processing liquids to the substrates 9 individually. The plural types of treatment liquids include, for example, chemical liquids, cleaning liquids, and the like, which will be described later. The processing liquid supply unit 5 includes a first nozzle 51 and a second nozzle 52 . The first nozzle 51 and the second nozzle 52 respectively supply the processing liquid from above the substrate 9 toward the main surface on the upper side of the substrate 9 (hereinafter referred to as "upper surface 91").

In the state shown in FIG. 1 , the first nozzle 51 is positioned above the central portion of the substrate 9 , and the processing liquid is supplied from the first nozzle 51 to the central portion of the substrate 9 . At this time, the second nozzle 52 is retracted to a retracted position outside the edge (ie, the peripheral edge) of the substrate 9 in the radial direction (hereinafter also simply referred to as "radial direction") with the center axis J1 as the center. When supplying the processing liquid to the substrate 9 from the second nozzle 52 , the first nozzle 51 is retracted to a retracted position radially outward of the edge of the substrate 9 , and the second nozzle 52 is positioned above the center of the substrate 9 . In the example shown in FIG. 1 , the retracted positions of the first nozzle 51 and the second nozzle 52 are located on the outer side in the radial direction of the cover portion 4 , respectively.

The cover portion 4 is a liquid receiving container for receiving liquid such as a processing liquid scattered from the rotating substrate 9 to the surroundings. The cover portion 4 is arranged over the entire circumference of the substrate 9 and the substrate holding portion 31 , and covers the sides of the substrate 9 and the substrate holding portion 31 . The cover portion 4 is stationary in the circumferential direction regardless of whether the substrate 9 is rotated or stationary. Drain ports 411 and 421 are provided at the bottom of the cover portion 4 , and the drain ports 411 and 421 discharge the processing liquid and the like caught by the cover portion 4 to the outside of the casing 11 .

The cover part 4 is provided with the some cover element laminated|stacked in the radial direction at intervals. In the example shown in FIG. 1, the cover part 4 is equipped with the 1st cover 41 and the 2nd cover 42 as two cover elements. The first cover 41 and the second cover 42 are respectively approximately annular members with the center axis J1 as the center. The first cover 41 is positioned radially inward of the second cover 42 . The inner surfaces of the first cover 41 and the second cover 42 are formed of, for example, a water-repellent material. In addition, the number of cover elements with which the cover part 4 is equipped can also be changed suitably.

The cover portion 4 is further provided with a cover switching mechanism 44 . The cover switching mechanism 44 is a cover elevating mechanism for moving the first cover 41 in the up-down direction. The cover switching mechanism 44 includes, for example, an air cylinder or an electric linear motor connected to the first cover 41 . The cover switching mechanism 44 moves the first cover 41 in the vertical direction between the liquid receiving position shown in FIG. 1 and a retracted position below the liquid receiving position. In a state where the first cover 41 is located at the liquid receiving position on the side of the substrate 9 , the liquid system scattered around from the rotating substrate 9 is received by the first cover 41 . In addition, when the first cover 41 is located at the above-mentioned retracted position, the second cover 42 is located on the side of the substrate 9 , and the liquid system scattered from the rotating substrate 9 to the surroundings is caught by the second cover 42 . That is, the cover switching mechanism 44 moves the first cover 41 in the vertical direction, thereby selectively disposing one of the second cover 42 and the first cover 41 on the side of the substrate 9 .

In addition, in the cover part 4, the 2nd cover 42 may be arrange|positioned in the radial direction inner side of the 1st cover 41. In this case, the cover switching mechanism 44 moves the second cover 42 in the vertical direction between the liquid receiving position and the retracted position. In addition, the cover switching mechanism 44 can move both the second cover 42 and the first cover 41 in the up-down direction individually, and can also move the board holding portion 31 in the up-down direction. In other words, the cover switching mechanism 44 relatively moves at least one of the first cover 41 and the second cover 42 in the up-down direction with respect to the substrate holding portion 31 , thereby switching a certain one of the first cover 41 and the second cover 42 One cover is selectively arranged on the side of the substrate 9 .

FIG. 2 is a block diagram showing the processing liquid supply unit 5 and the cleaning liquid refining unit 6 of the substrate processing apparatus 1 . In FIG. 2 , configurations other than the processing liquid supply unit 5 and the cleaning liquid refining unit 6 are also shown together. The processing liquid supply part 5 is provided with a first chemical liquid supply part 54 , a first cleaning liquid supply part 55 , a second chemical liquid supply part 56 , and a second cleaning liquid supply part 57 . The cleaning liquid refining unit 6 includes a first refining unit 61 , a second refining unit 62 , a first circulation mechanism 63 , and a second circulation mechanism 64 . The second refining part 62 is a refining part which is independent from the first refining part 61 and different from the first refining part 61 .

The first chemical solution supply unit 54 includes a first nozzle 51 , a piping 541 , a first chemical solution supply source 542 , and a valve 543 . Unused first chemical liquid is stored in the first chemical liquid supply source 542 . The first nozzle 51 is connected to the first chemical solution supply source 542 via a pipe 541 . In the first chemical solution supply unit 54 , the valve 543 provided on the piping 541 is opened, whereby the first chemical solution is sent from the first chemical solution supply source 542 to the first nozzle 51 . Next, the first chemical solution is supplied to the substrate 9 from the first nozzle 51 , whereby the first chemical solution treatment is performed on the substrate 9 . The first nozzle 51 is a first chemical liquid ejection portion for ejecting the first chemical liquid toward the substrate 9 .

The first chemical solution used in the first chemical solution treatment is an alkaline chemical solution. The first chemical solution is, for example, SC1 (Standard clean-1; first standard cleaning solution) (ie, ammonia water, hydrogen peroxide water, and DIW (De-ionized Water; deionized water) used in the cleaning process of the substrate 9 . mixture) and other cleaning solutions. The first chemical solution may be a chemical solution other than the cleaning solution. The used first chemical solution that has been used in the first chemical solution treatment is scattered from the substrate 9 to the surroundings by the rotation of the substrate 9 and is caught by the first cover 41 of the cover unit 4 . The first chemical liquid caught by the first cover 41 is discharged to the outside of the casing 11 (see FIG. 1 ) through the first discharge port 411 provided at the bottom of the first cover 41 . The first chemical solution discharged from the casing 11 is guided to the first chemical solution recovery unit 14 by the switching valve 13 .

The first cleaning liquid supply unit 55 includes a first nozzle 51 , a piping 551 , a first cleaning liquid supply source 552 , and a valve 553 . The first cleaning solution supply unit 55 shares the first nozzle 51 with the first chemical solution supply unit 54 . Unused first cleaning liquid is stored in the first cleaning liquid supply part 55 . The first nozzle 51 is connected to the first cleaning liquid supply source 552 via a pipe 551 . In the first cleaning liquid supply unit 55 , the valve 553 provided on the piping 551 is opened, whereby the first cleaning liquid is sent from the first cleaning liquid supply source 552 to the first nozzle 51 . Next, the first cleaning process is performed on the substrate 9 by supplying the first cleaning liquid to the substrate 9 from the first nozzle 51 . The first nozzle 51 is a first cleaning liquid ejection part for ejecting the first cleaning liquid toward the substrate 9 .

The first cleaning liquid used in the first cleaning treatment is, for example, an aqueous treatment liquid such as DIW, carbonated water, ozone water, or hydrogen water. In the present embodiment, DIW is used as the first cleaning solution. The used first cleaning liquid used in the first cleaning process is scattered around the substrate 9 by the rotation of the substrate 9 , and is caught by the first cover 41 of the cover unit 4 . The first cleaning liquid caught by the first cover 41 is discharged to the outside of the casing 11 (see FIG. 1 ) through the first discharge port 411 provided at the bottom of the first cover 41 .

The used first cleaning liquid (hereinafter also referred to as "first used cleaning liquid") discharged from the casing 11 is sent to the piping 611 through the switching valve 13 . The piping 611 is connected to the first purification part 61 and the first waste liquid part 65 via the switching valve 612 . A first conductivity measuring unit 613 is provided between the switching valve 13 and the switching valve 612 of the piping 611 . The first conductivity measuring unit 613 measures the conductivity of the first used cleaning liquid flowing from the switching valve 13 toward the switching valve 612 through the piping 611 . When the measured value of the first conductivity measuring unit 613 (that is, the conductivity of the first used cleaning solution) is larger than the first threshold value belonging to the predetermined threshold value, the piping 611 is switched by the valve 612 is connected to the first waste liquid part 65 . The first used cleaning liquid flowing in the piping 611 is guided to the first waste liquid part 65 and discarded without performing the purification process described later.

On the other hand, in a state where the measured value of the first electrical conductivity measuring unit 613 (that is, the electrical conductivity of the first used cleaning solution) is equal to or smaller than the first threshold value, the piping 611 is connected to the second electrical conductivity via the switching valve 612 . A refining section 61 . The first used cleaning liquid flowing through the piping 611 is guided to the first refining part 61 , and the first used cleaning liquid is subjected to a refining process including dilution in the first refining part 61 . In the first purification unit 61, the first used cleaning liquid from which foreign matter has been removed, for example, filtered with a filter or the like is temporarily stored in the first purification tank, and the first used cleaning liquid in the first purification tank is A dilution process of the first used cleaning solution is performed by adding an unused first cleaning solution (eg, DIW). In the first purification section 61, various purification processes may be performed in addition to the dilution process. In the first purifying section 61 , a purifying process is performed on the first used cleaning solution, thereby generating a first regenerated cleaning solution that can be reused in the cleaning process for the substrate 9 .

The first regeneration cleaning liquid is sent to the first cleaning liquid supply unit 55 by the first circulation mechanism 63 via the piping 614 . The first circulation mechanism 63 includes, for example, a pump for pressurizing the first regeneration cleaning liquid. The piping 614 is connected to the piping 551 between the first cleaning liquid supply source 552 and the valve 553 in the first cleaning liquid supply unit 55 . The first regeneration cleaning liquid is sent to the first nozzle 51 via the pipe 551 . Next, the substrate 9 is subjected to the first cleaning process by supplying the first regeneration cleaning liquid from the first nozzle 51 to the substrate 9 . In other words, in the first cleaning process for the substrate 9, the first cleaning solution (ie, the first regeneration cleaning solution) that has been subjected to the refining process in the first refining unit 61 is used again.

In this first cleaning process, for example, only the first regeneration cleaning liquid may be used, or the first regeneration cleaning liquid may be used in a state where the unused first cleaning liquid from the first cleaning liquid supply source 552 is mixed with the first regeneration cleaning liquid. . In addition, the first half of the first cleaning process may be performed only with the first regenerated cleaning solution, and the second half of the first cleaning process may be performed only with the unused first cleaning solution. As described above, only the unused first cleaning liquid may be used throughout the first cleaning process for the substrate 9 .

The second chemical solution supply unit 56 includes a second nozzle 52 , a piping 561 , a second chemical solution supply source 562 , and a valve 563 . Unused second medicinal solution is stored in the second medicinal solution supply source 562 . The second nozzle 52 is connected to the second chemical solution supply source 562 via a pipe 561 . In the second chemical solution supply unit 56 , the valve 563 provided on the piping 561 is opened, whereby the second chemical solution is sent from the second chemical solution supply source 562 to the second nozzle 52 . Next, the second chemical solution is supplied to the substrate 9 from the second nozzle 52 , whereby the second chemical solution treatment is performed on the substrate 9 . The second nozzle 52 is a second chemical liquid ejection portion for ejecting the second chemical liquid toward the substrate 9 .

The second chemical solution used in the second chemical solution treatment is an acidic chemical solution. The second chemical solution is, for example, a cleaning solution such as SC2 (Standard clean-2; second standard cleaning solution) (ie, a mixed solution of hydrochloric acid, hydrogen peroxide water, and DIW) used in the cleaning process of the substrate 9 . The second chemical solution may be a chemical solution other than the cleaning solution. The used second chemical solution that has been used in the second chemical solution treatment is scattered from the substrate 9 to the surroundings by the rotation of the substrate 9 and is caught by the second cover 42 of the cover part 4 . At this time, the first cover 41 is located at a retracted position lower than the liquid receiving position shown in FIG. 2 by the cover switching mechanism 44 . The second chemical liquid caught by the second cover 42 is discharged to the outside of the casing 11 (see FIG. 1 ) through the second discharge port 421 provided at the bottom of the second cover 42 . The second chemical solution discharged from the casing 11 is guided to the second chemical solution recovery unit 16 by the switching valve 15 .

The second cleaning liquid supply unit 57 includes a second nozzle 52 , a piping 571 , a second cleaning liquid supply source 572 , and a valve 573 . The second cleaning solution supply unit 57 shares the second nozzle 52 with the second chemical solution supply unit 56 . Unused second cleaning liquid is stored in the second cleaning liquid supply part 57 . The second nozzle 52 is connected to the second cleaning liquid supply source 572 via a pipe 571 . In the second cleaning liquid supply unit 57 , the second cleaning liquid is sent from the second cleaning liquid supply source 572 to the second nozzle 52 by opening the valve 573 provided in the piping 571 . Next, the second cleaning process is performed on the substrate 9 by supplying the second cleaning liquid to the substrate 9 from the second nozzle 52 . The second nozzle 52 is a second cleaning liquid ejection part for ejecting the second cleaning liquid toward the substrate 9 .

The second cleaning liquid used in the second cleaning treatment is, for example, an aqueous treatment liquid such as DIW, carbonated water, ozone water, or hydrogen water. In the present embodiment, DIW is used as the second cleaning liquid. That is, in the present embodiment, the second cleaning liquid is the same type of liquid as the first cleaning liquid. The used second cleaning liquid used in the second cleaning process is scattered around the substrate 9 by the rotation of the substrate 9 , and is caught by the second cover 42 of the cover portion 4 . The second cleaning liquid caught by the second cover 42 is discharged to the outside of the casing 11 (see FIG. 1 ) through the second discharge port 421 provided at the bottom of the second cover 42 .

The used second cleaning liquid (hereinafter also referred to as "second used cleaning liquid") discharged from the casing 11 is sent to the piping 621 through the switching valve 15 . The piping 621 is connected to the second purification part 62 and the second waste liquid part 66 via the switching valve 622 . A second conductivity measuring unit 623 is provided between the switching valve 15 and the switching valve 622 of the piping 621 . The second conductivity measuring unit 623 measures the conductivity of the second used cleaning liquid flowing from the switching valve 15 toward the switching valve 622 through the piping 621 . In a state where the measured value of the second conductivity measuring unit 623 (that is, the conductivity of the second used cleaning solution) is larger than the second threshold value belonging to the predetermined threshold value, the piping 621 is switched by the valve. 622 is connected to the second waste liquid part 66 . The second used cleaning liquid flowing through the piping 621 is guided to the second waste liquid part 66 and discarded without performing the purification process described later. The second threshold value may be different from the above-mentioned first threshold value, or may be the same as the above-mentioned first threshold value.

On the other hand, in a state where the measured value of the second electrical conductivity measuring unit 623 (that is, the electrical conductivity of the second used cleaning solution) is equal to or less than the second threshold value, the piping 621 is connected to the second electrical conductivity via the switching valve 622 . Second refining section 62 . The second used cleaning liquid flowing through the piping 621 is guided to the second refining part 62 , and the second used cleaning liquid is subjected to a refining process including dilution in the second refining part 62 . In the second purification unit 62, the second used cleaning liquid from which foreign matter has been removed, for example, filtered by a filter or the like is temporarily stored in the second purification tank, and the second used cleaning liquid in the second purification tank is temporarily stored. A dilution process of the second used cleaning solution is performed by adding an unused second cleaning solution (eg, DIW). In the second purification section 62, various purification processes may be performed in addition to the dilution process. In the second purification unit 62 , a purification process is performed on the second used cleaning solution, thereby generating a second regenerated cleaning solution that can be reused in the cleaning process for the substrate 9 .

The second regeneration cleaning liquid is sent to the second cleaning liquid supply unit 57 by the second circulation mechanism 64 via the piping 624 . The second circulation mechanism 64 includes, for example, a pump for pressurizing the second regeneration cleaning liquid. The piping 624 is connected to the piping 571 between the second cleaning liquid supply source 572 and the valve 573 in the second cleaning liquid supply unit 57 . The second regeneration cleaning liquid is sent to the second nozzle 52 via the pipe 571 . Next, the second cleaning process is performed on the substrate 9 by supplying the second regeneration cleaning liquid to the substrate 9 from the second nozzle 52 . In other words, in the second cleaning process for the substrate 9, the second cleaning solution (ie, the second regeneration cleaning solution) that has been subjected to the refining process in the second refining unit 62 is used again.

In the second cleaning process, for example, only the second regeneration cleaning liquid may be used, or the second regeneration cleaning liquid may be used in a state where the second regeneration cleaning liquid is mixed with the unused second cleaning liquid from the second cleaning liquid supply source 572 . . In addition, the first half of the second cleaning process may be performed only with the second regenerated cleaning solution, and the second half of the second cleaning process may be performed only with the unused second cleaning solution. As described above, only the unused second cleaning liquid may be used throughout the second cleaning process for the substrate 9 .

In the substrate processing apparatus 1, when the first cleaning liquid and the second cleaning liquid are of the same type, the piping 551 connected to the first nozzle 51 and the piping 571 connected to the second nozzle 52 may be connected to the same liquid. A supply of cleaning fluid. In other words, the cleaning liquid supply source may be shared by the first cleaning liquid supply part 55 and the second cleaning liquid supply part 57 . In addition, in this case, the first cleaning liquid and the second cleaning liquid may also be ejected toward the substrate 9 from the same nozzle.

The processing of the substrate 9 in the substrate processing apparatus 1 is performed, for example, in the order of the first chemical treatment, the first cleaning treatment, the second chemical treatment, the second cleaning treatment, and the drying treatment. FIG. 3 is a diagram showing an example of the flow of processing of the substrate 9 in the substrate processing apparatus 1 . 4 and 5 are detailed diagrams showing a part of the flow in the processing of the substrate 9, respectively.

Specifically, first, the substrate 9 is held in a horizontal state by the substrate holding portion 31 (step S11 ). Next, the rotation of the substrate 9 is started, and the alkaline first chemical solution is supplied from the first nozzle 51 to the rotating substrate 9 . Next, by supplying the first chemical solution for a predetermined time, the substrate 9 is subjected to the first chemical solution process (eg, the cleaning process performed by SC1 ) (step S12 ). The first chemical solution scattered around from the substrate 9 in the first chemical solution treatment is caught by the first cover 41 of the cover part 4 and guided toward the first chemical solution recovery part 14 outside the casing 11 .

When the first chemical solution treatment on the substrate 9 is completed, the first cleaning solution is supplied from the first nozzle 51 to the rotating substrate 9 . Next, the first cleaning process is performed on the substrate 9 by supplying the first cleaning solution for a predetermined time (step S13). The first cleaning liquid (that is, the first used cleaning liquid) used for the first cleaning process and scattered from the substrate 9 to the surroundings is caught by the first cover 41 of the cover part 4 and purified toward the outside of the casing 11 . The part 6 guides and recovers (step S14).

In the cleaning liquid refining unit 6, the conductivity of the first used cleaning liquid flowing through the piping 611 is continuously measured by the first conductivity measuring unit 613 (step S141 in FIG. 4). Since the concentration of the first chemical solution contained in the first used cleaning solution is high immediately after the first cleaning process, the measured value of the first conductivity measuring unit 613 (that is, the conductivity of the first used cleaning solution) ) is higher. In a state where the measured value in step S141 is larger than the first threshold value, the first used cleaning liquid is guided to the first waste liquid part 65 and discarded without performing purification (steps S142 and S143).

When time elapses from the start of the first cleaning process, the concentration of the first chemical solution contained in the first used cleaning solution decreases, and the value measured by the first conductivity measuring unit 613 also decreases. When the measured value in step S141 becomes equal to or less than the first threshold value, the first used cleaning liquid is guided to the first purification unit 61 , and the first used cleaning liquid is diluted by inclusion in the first purification unit 61 . purification process (steps S142, S144). Thereby, the 1st regeneration cleaning liquid which can be reused in the 1st cleaning process with respect to the board|substrate 9 is produced|generated. The first regeneration cleaning liquid is used, for example, as the first cleaning liquid supplied to the substrate 9 at the time of the first cleaning process of the substrate 9 described above or at the time of the first cleaning process of the subsequent substrate.

When the first cleaning process for the substrate 9 is completed, the second acidic chemical solution is supplied from the second nozzle 52 to the rotating substrate 9 . Next, by supplying the second chemical solution for a predetermined time, the substrate 9 is subjected to the second chemical solution treatment (for example, the cleaning process performed by SC2) (step S15). The second chemical solution scattered around from the substrate 9 in the second chemical solution treatment is caught by the second cover 42 of the cover part 4 and guided toward the second chemical solution recovery part 16 outside the casing 11 . In addition, step S15 may be performed in parallel with the purification process of the said 1st washing|cleaning liquid.

When the second chemical solution treatment on the substrate 9 is completed, the second cleaning solution is supplied from the second nozzle 52 to the rotating substrate 9 . Next, the second cleaning process is performed on the substrate 9 by supplying the second cleaning liquid for a predetermined time (step S16). The second cleaning liquid (that is, the second used cleaning liquid) used for the second cleaning process and scattered from the substrate 9 to the surroundings is caught by the second cover 42 of the cover part 4 and purified toward the outside of the casing 11 . The part 6 guides and collects (step S17).

In the cleaning liquid refining unit 6, the conductivity of the second used cleaning liquid flowing through the piping 621 is continuously measured by the second conductivity measuring unit 623 (step S171 in FIG. 5). Immediately after the start of the second cleaning process, since the concentration of the second chemical solution contained in the second used cleaning solution is relatively high, the measured value of the second conductivity measuring unit 623 (that is, the conductivity of the second used cleaning solution) rate) is higher. In a state where the measured value in step S171 is larger than the second threshold value, the second used cleaning liquid system is guided to the second waste liquid part 66 and discarded without performing the purification process (steps S172 and S173 ) .

When time elapses from the start of the second cleaning process, the concentration of the second chemical solution contained in the second used cleaning solution decreases, and the value measured by the second conductivity measuring unit 623 also decreases. When the measured value in step S171 becomes equal to or less than the second threshold value, the second used cleaning liquid is guided to the second purification unit 62 , and the second used cleaning liquid is diluted by inclusion in the second purification unit 62 . purification process (steps S172, S174). Thereby, the 2nd regeneration cleaning liquid which can be reused in the 2nd cleaning process with respect to the board|substrate 9 is produced|generated. The second regeneration cleaning liquid is used, for example, as the second cleaning liquid supplied to the substrate 9 at the time of the second cleaning process of the substrate 9 described above or the second cleaning process of the subsequent substrate.

After that, the supply of the second cleaning process is stopped, and the drying process of the substrate 9 is performed (step S18 in FIG. 3 ). During the drying process, the rotational speed of the substrate 9 is increased, and the processing liquid remaining on the substrate 9 is scattered radially outward from the edge of the substrate 9 by centrifugal force and removed from the substrate 9 . The processing liquid system scattered from the substrate 9 is caught by the second cover 42 of the cover part 4 and discharged to the outside of the casing 11 . In the substrate processing apparatus 1 , the processes of the above-described steps S11 to S18 are sequentially performed on a plurality of substrates 9 .

The substrate processing apparatus 1 does not necessarily need to perform the purification treatment of the first cleaning liquid and the second cleaning liquid, and the purification treatment may be performed only on the cleaning liquid of one of the first cleaning liquid and the second cleaning liquid. In the following description, when referring to the cleaning liquid of either the first cleaning liquid and the second cleaning liquid without distinguishing the first cleaning liquid and the second cleaning liquid, it may also be simply referred to as "cleaning liquid". Similarly, the first used cleaning solution and the second used cleaning solution may also be referred to as "used cleaning solution". Similarly, the first regeneration cleaning liquid and the second regeneration cleaning liquid may also be referred to as "regeneration cleaning liquids". Similarly, the first medicinal solution and the second medicinal solution may also be referred to as "medicine solution".

In addition, in the case of referring to the cleaning process of either the first cleaning process or the second cleaning process without distinguishing the first cleaning process and the second cleaning process, it may also be simply referred to as a "cleaning process". Similarly, the first chemical treatment and the second chemical treatment may also be referred to as "chemical treatment". Along with this, in the case where the first cleaning liquid supply part 55 and the second cleaning liquid supply part 57 do not need to be distinguished, they may also be simply referred to as "cleaning liquid supply part". Similarly, the first chemical solution supply part 54 and the second chemical solution supply part 56 may also be referred to as "chemical solution supply parts". Similarly, the first conductivity measurement unit 613 and the second conductivity measurement unit 623 may also be referred to as "conductivity measurement units".

As described above, the substrate processing apparatus 1 includes the substrate holding unit 31 , the chemical solution supply unit, the cleaning solution supply unit, and the cleaning solution purification unit 6 . The substrate holding portion 31 holds the substrate 9 in a horizontal state. The chemical liquid supply unit supplies the chemical liquid to the substrate 9 during chemical processing of the substrate 9 . The cleaning liquid supply unit supplies the cleaning liquid to the substrate 9 during the cleaning process of the substrate 9 . The cleaning liquid purifying unit 6 performs purification treatment including dilution on the used cleaning liquid that has been used in the cleaning process, which is the used cleaning liquid, and generates a regenerated cleaning liquid that can be reused. Thereby, the used cleaning liquid can be regenerated. As a result, the usage amount of the cleaning liquid can be reduced.

As described above, in the substrate processing apparatus 1, it is preferable to supply the regeneration cleaning liquid to the substrate 9 during the above cleaning process. Thereby, the usage-amount of the cleaning liquid in the substrate processing apparatus 1 can be reduced.

As described above, it is preferable that the substrate processing apparatus 1 further includes a conductivity measuring unit for measuring the conductivity of the used cleaning solution. In addition, in the state where the measured value of the electrical conductivity measuring unit is larger than the predetermined threshold value, the used cleaning liquid system is discarded without performing the purification process; when the measured value of the electrical conductivity measuring unit becomes the predetermined threshold value In the following cases, the cleaning liquid system was used to guide the cleaning liquid purification unit to perform the purification process. As a result, the purification process of the used cleaning solution with a high concentration of the chemical solution can be avoided, and the burden of the purification process in the cleaning solution purification unit 6 (for example, an increase in processing time or an increase in the flow rate of the cleaning solution for dilution) can be reduced. ). As a result, the regeneration cleaning liquid can be efficiently produced. In addition, it is also possible to optimize the time required for the cleaning process by measuring the conductivity of the used cleaning solution in the substrate processing apparatus 1 .

As described above, it is preferable that the cleaning liquid refining unit 6 includes the first refining unit 61 and the second refining unit 62 . When the chemical solution used in the chemical solution treatment is alkaline, the first refining unit 61 performs refining treatment on the used cleaning solution that has been used in the cleaning process after the chemical solution treatment. When the chemical solution used in the chemical solution treatment is acidic, the second refining unit 62 performs a refining process on the used cleaning solution that has been used in the cleaning process after the chemical solution treatment. As a result, it is possible to prevent mixing of the alkaline chemical and the acidic chemical contained in the used cleaning liquid in the cleaning liquid refining section 6 . As a result, chemical reaction and the like between the alkaline chemical solution and the acidic chemical solution can be prevented.

As described above, it is preferable that the substrate processing apparatus 1 further includes the substrate rotating mechanism 33 and the cover portion 4 . The substrate rotation mechanism 33 rotates the substrate holding portion 31 with the center axis J1 facing the vertical direction as a center. The cover part 4 surrounds the circumference of the substrate 9 and catches the liquid scattered from the rotating substrate 9 to the circumference. The cover portion 4 includes a first cover 41 , a second cover 42 , and a cover switching mechanism 44 . When the chemical solution used in the chemical solution treatment is alkaline, the first cover 41 catches the cleaning solution scattered from the substrate 9 to the surroundings during the cleaning process after the chemical solution treatment. When the chemical solution used in the chemical solution treatment is acidic, the second cover 42 catches the cleaning solution scattered from the substrate 9 to the surroundings during the cleaning process after the chemical solution treatment. The cover switching mechanism 44 relatively moves the cover of at least one of the first cover 41 and the second cover 42 in the up-down direction with respect to the substrate holding portion 31 , thereby switching any one of the first cover 41 and the second cover 42 The cover is selectively arranged on the side of the substrate 9 .

Thereby, in the case where the cleaning solution has been used in the cleaning process after the chemical treatment of the alkaline chemical solution, the used cleaning solution can be easily sent to the first refining section 61; when the cleaning solution has been used in the acidic solution In the case of the cleaning process after the chemical treatment of the chemical liquid, the used cleaning liquid can be easily sent to the second refining part 62 . In other words, the used cleaning liquid sent to the first refining part 61 and the used cleaning liquid sent to the second refining part 62 can be easily distinguished. In addition, it is also possible to prevent mixing of the alkaline chemical solution and the acidic chemical solution contained in the used cleaning solution in the cover part 4 .

The above-described substrate processing method includes the following steps: holding the substrate 9 in a horizontal state (step S11 ); supplying a chemical solution to the substrate 9 and performing the chemical solution treatment (step S12 ); after step S12 , supplying a cleaning solution to the substrate 9 and The cleaning process is performed (step S13 ); and the used cleaning solution, which is the used cleaning solution used in step S13 , is subjected to a purification process including dilution, and a reusable regenerated cleaning solution is generated (step S144 ). With this substrate processing method, the used cleaning solution can be regenerated. In the substrate processing method, steps S15, S16, and S174 may be performed in addition to steps S12, S13, and S144, or steps S15, S16, and S174 may be performed instead of steps S12, S13, and S144.

Preferably, the substrate processing method further includes a step of measuring the electrical conductivity of the used cleaning solution (step S141 ) before the above-mentioned step S144 . Then, in the state where the measured value in step S141 is larger than the predetermined threshold value, step S144 is not performed, and the used cleaning liquid system is discarded; when the measured value in step S141 becomes equal to or less than the predetermined threshold value , and go to step S144. Thereby, similarly to the above, the burden of the purification process using the cleaning liquid (for example, an increase in processing time or an increase in the flow rate of the cleaning liquid for dilution) can be reduced, and the regeneration cleaning liquid can be efficiently generated. In the substrate processing method, steps S171 and S174 may be performed in addition to steps S141 and S144 , or steps S171 and S174 may be performed instead of steps S141 and S144 .

In the substrate processing apparatus 1 described above, the piping 614 for guiding the first regenerated cleaning solution from the first refining unit 61 to the first cleaning solution supply unit 55 joins to supply the unused first cleaning solution from the first cleaning solution to the first cleaning solution. The cleaning solution supply source 552 is directed to the piping 551 leading to the first nozzle 51, and the first regeneration cleaning solution is ejected from the first nozzle 51 for ejecting the unused first cleaning solution, but is not limited to this. For example, the piping 614 for guiding the first regenerated cleaning liquid from the first refining part 61 to the first cleaning liquid supply part 55 may be connected to another nozzle different from the first nozzle 51, and the other nozzles The first regeneration cleaning liquid is ejected toward the substrate 9 . Here, the first nozzle 51 and the piping 551 are referred to as "unused cleaning solution ejection portion" and "unused cleaning solution piping", and the other nozzles and piping 614 described above are referred to as "regenerated cleaning solution ejection portion" and "unused cleaning solution ejection portion". In the case of "regeneration cleaning solution piping", the first cleaning solution supply unit 55 includes an unused cleaning solution ejection portion, an unused cleaning solution piping, a regeneration cleaning solution ejection portion, and a regeneration cleaning solution piping. The same applies to the second cleaning liquid supply unit 57 .

In this way, in the substrate processing apparatus 1, it is preferable that the cleaning solution supplying unit includes an unused cleaning solution ejection unit, an unused cleaning solution piping, a regeneration cleaning solution ejection unit, and a regeneration cleaning solution piping. The unused cleaning liquid ejecting portion ejects the unused cleaning liquid toward the substrate 9 . The unused cleaning solution piping system guides the unused cleaning solution from the supply source to the unused cleaning solution ejection portion. The regeneration cleaning solution ejection part ejects the regeneration cleaning solution toward the substrate. The regeneration cleaning solution piping system is independent from the unused cleaning solution piping, and guides the regeneration cleaning solution from the cleaning solution purification unit to the regeneration cleaning solution ejection unit. In this way, the regeneration cleaning solution ejection part for ejecting the regeneration cleaning solution and the unused cleaning solution ejection part for ejecting the unused cleaning solution are provided independently, and the pipes connected to the regeneration cleaning solution ejection part are connected to the unused cleaning solution. The piping using the cleaning liquid ejection portion is independent, whereby it is possible to prevent the unused cleaning liquid in the cleaning liquid supply portion from mixing with the regenerated cleaning liquid. As a result, when the substrate 9 is cleaned using only the unused cleaning liquid, the used cleaning liquid can be prevented from being mixed into the unused cleaning liquid, and the purity of the cleaning liquid can be prevented from decreasing.

The above-mentioned unused cleaning liquid ejection portion and the regenerated cleaning liquid ejection portion do not necessarily need to be independent nozzles. For example, as shown in FIG. 6 , two independent flow paths 581 and 582 may be provided inside one nozzle 58 . One flow path 581 is used as the unused cleaning liquid ejection portion 581 , and the other flow path 582 is used as regeneration The cleaning liquid ejection part 582 is used. The unused cleaning solution ejection part 581 is connected to an unused cleaning solution pipe 583 for guiding the unused cleaning solution from the supply source, and ejects the unused cleaning solution toward the substrate 9 . The regeneration cleaning solution ejecting part 582 is independent from the unused cleaning solution piping 583 , and is connected to the regeneration cleaning solution piping 584 for guiding the regeneration cleaning solution from the cleaning solution refining part, and ejects the regeneration cleaning solution toward the substrate 9 . Also in this case, it is possible to prevent the unused cleaning liquid in the cleaning liquid supply unit from mixing with the regeneration cleaning liquid in the same manner as described above.

Various modifications can be made to the substrate processing apparatus 1 and the substrate processing method described above.

For example, the first nozzle 51 and the second nozzle 52 of the substrate processing apparatus 1 may discharge the processing liquid toward the lower surface of the substrate 9 . In addition, in the substrate processing apparatus 1 , in addition to the first nozzle 51 and the second nozzle 52 for supplying the processing liquid to the upper surface 91 of the substrate 9 , the substrate 9 may be further provided with a processing liquid for supplying the processing liquid to the lower surface 91 . lower nozzle. The lower nozzle is provided, for example, inside the shaft of the substrate rotating mechanism 33 , and supplies the processing liquid to the center portion of the lower surface of the substrate 9 . In the case where the cleaning liquid is supplied to the lower surface of the substrate 9 from the lower nozzle, the used cleaning liquid (that is, the used cleaning liquid) may be purified in the cleaning liquid refining section 6 and used for the substrate 9 as a regenerated cleaning liquid. cleaning treatment. The cleaning liquid supplied to the lower surface of the substrate 9 may be an unused cleaning liquid or a regenerated cleaning liquid. Further, in the substrate processing apparatus 1 , the unused cleaning solution may be ejected toward the lower surface of the substrate 9 from the unused cleaning solution ejection portion, and the regeneration cleaning solution may be ejected toward the lower surface of the substrate 9 from the regeneration cleaning solution ejection portion.

In the substrate processing apparatus 1, the first used cleaning solution used in the first cleaning process after the first chemical solution treatment by the alkaline first chemical solution and the second chemical solution already in the acidic solution are used. The second used cleaning solution used in the second cleaning process after the second chemical solution treatment is not necessarily separated by being caught by the first cover 41 and the second cover 42 of the cover part 4 . For example, the first used cleaning liquid and the second used cleaning liquid may be received in the same cover, and the first used cleaning liquid may be switched by a switching valve provided in the piping for guiding toward the cleaning liquid refining unit 6 . The used cleaning liquid is guided toward the first refining portion 61 and the second used cleaning liquid is guided toward the second refining portion 62 . Also in this case, the used cleaning liquid sent to the first refining part 61 and the used cleaning liquid sent to the second refining part 62 can be easily distinguished.

In the substrate processing apparatus 1 , the measurement of the conductivity of the used cleaning solution by the conductivity measuring unit does not necessarily have to be performed on the used cleaning solution flowing through the piping, but may be temporarily stored in a tank or the like before dilution, for example. of the used cleaning solution.

In the substrate processing apparatus 1, it is not necessary to perform the measurement of the conductivity of the used cleaning solution by the conductivity measurement section. For example, the time from the start of the cleaning process until the conductivity of the used cleaning solution falls below a predetermined threshold value (hereinafter referred to as "waiting time") may be measured in advance, and the time from the start of the cleaning process until the waiting time elapses may be measured. The used cleaning solution is discarded, and the purification process of the used cleaning solution is started after the waiting time has elapsed. In addition, in the case where the load on the cleaning liquid refining part 6 is small, the used cleaning liquid may be sent to the cleaning liquid refining part 6 immediately after the cleaning process is started, and the used cleaning liquid may be refined.

The processing content of the substrate 9 in the substrate processing apparatus 1 is not limited to the above-mentioned example, and various modifications can be made. For example, the cleaning process by hydrofluoric acid, the cleaning process by SC1 and the cleaning process by SC2 may be sequentially performed on the substrate 9 . In this case, the used cleaning solution that has been used in the cleaning treatment after the cleaning treatment by acidic hydrofluoric acid and the used cleaning solution that has been used in the cleaning treatment after the cleaning treatment by acid SC2 It may be guided to the second purification part 62 and subjected to purification treatment, and the used cleaning liquid used in the washing treatment after the washing treatment by the alkaline SC1 may also be guided to the first purification part 61. and subjected to refining treatment.

In the substrate processing apparatus 1, the used cleaning solution that has been used in the cleaning process after the chemical solution treatment by the alkaline chemical solution and the cleaning process that has been used in the cleaning process after the chemical solution treatment by the acidic chemical solution The used cleaning solution does not necessarily need to be refined separately. For example, the two types of used cleaning liquids may be purified in the same purification section.

In the substrate processing apparatus 1 , from the viewpoint of maintaining the cleanliness of the cleaning solution, the regenerated cleaning solution that has been purified by the cleaning solution refining unit 6 may be used after the cleaning process for a predetermined number of substrates 9 . Abandoned. In addition, in the substrate processing apparatus 1 , only the unused cleaning liquid may be used in the cleaning process immediately before the drying process of the substrate 9 . In addition, in the substrate processing apparatus 1 , the regeneration cleaning solution may be used in other apparatuses instead of the cleaning process of the substrate 9 .

The above-mentioned substrate processing apparatus 1 can be used not only for processing semiconductor substrates, but also for processing glass substrates used in flat panel displays such as liquid crystal display devices and organic EL (Electro Luminescence) display devices. Processing or processing of glass substrates used in other display devices. In addition, the above-mentioned substrate processing apparatus 1 can also be used for the processing of optical disk substrates, magnetic disk substrates, optical magnetic disk substrates, photomask substrates, ceramic substrates, solar cell substrates, and the like.

The configurations in the above-described embodiment and each modification example may be appropriately combined as long as they do not contradict each other.

While the present invention has been described and illustrated in detail, the foregoing description is illustrative and not restrictive. Therefore, various changes and aspects are possible without departing from the scope of the present invention.

1: Substrate processing device 4: Cover part 5: Treatment liquid supply part 6: Cleaning liquid refining department 9: Substrate (semiconductor substrate) 11: Shell 13, 15, 612, 622: Switching valve 14: The first liquid medicine recovery department 16: The second liquid medicine recovery department 31: Substrate holding part 33: Substrate Rotation Mechanism 41: The first hood 42: Second cover 44: Hood switching mechanism 51: The first nozzle 52: Second nozzle 54: The first liquid medicine supply part 55: The first cleaning solution supply part 56: Second liquid medicine supply part 57: Second cleaning liquid supply part 58: Nozzle 61: The first refining department 62: Second Refining Department 63: The first circulation mechanism 64: Second circulation mechanism 65: The first waste liquid part 66: Second waste liquid part 91: Upper surface 411, 421: Drain port 541, 551, 561, 571, 611, 614, 621, 624: Piping 542: The first liquid medicine supply source 543, 553, 563, 573: Valves 552: First cleaning fluid supply source 562: The second liquid medicine supply source 572: Second cleaning fluid supply source 581: Unused cleaning fluid ejection part (flow path) 582: Regeneration cleaning liquid ejection part (flow path) 583: Unused cleaning fluid piping 584: Regenerative cleaning fluid piping 613: First conductivity measuring section 623: Second conductivity measuring section J1: Center axis

1 is a side view showing the configuration of a substrate processing apparatus according to one embodiment. FIG. 2 is a block diagram showing a processing liquid supply part and a cleaning liquid refining part. FIG. 3 is a diagram showing a flow of processing of the substrate. FIG. 4 is a diagram showing a part of the flow of the processing of the substrate. [ Fig. 5] Fig. 5 is a diagram showing a part of the flow of the substrate processing. [Fig. 6] is a side view showing the nozzle enlarged.

1: Substrate processing device

4: Cover part

5: Treatment liquid supply part

6: Cleaning liquid refining department

9: Substrate (semiconductor substrate)

11: Shell

31: Substrate holding part

33: Substrate Rotation Mechanism

41: The first hood

42: Second cover

44: Hood switching mechanism

51: The first nozzle

52: Second nozzle

91: Upper surface

411, 421: Drain port

J1: Center axis

Claims (12)

A substrate processing device is provided with: The substrate holding part is used to hold the substrate in a horizontal state; a chemical solution supply unit for supplying the chemical solution to the substrate during the chemical solution treatment of the substrate; a cleaning liquid supply unit for supplying a cleaning liquid to the substrate during the cleaning process of the substrate; and The cleaning liquid purifying section performs purification treatment including dilution on the used cleaning liquid that has been used in the cleaning process and is a used cleaning liquid, and generates a regenerated cleaning liquid that can be reused. The substrate processing apparatus according to claim 1, wherein the cleaning solution refining section includes: The first purifying section performs the purifying treatment on the used cleaning solution used in the cleaning process after the chemical solution treatment when the chemical solution used in the chemical solution treatment is alkaline ;as well as The second refining section performs the refining process on the used cleaning solution used in the cleaning process after the chemical solution treatment when the chemical solution used in the chemical solution treatment is acidic. The substrate processing apparatus according to claim 2, further comprising: a substrate rotation mechanism for rotating the substrate holding portion around a center axis facing the up-down direction; and a cover part, which surrounds the circumference of the base plate, and is used for catching the liquid scattered from the rotating base plate to the circumference; The aforementioned cover is provided with: a first cover, in the case where the chemical solution used in the chemical solution treatment is alkaline, catches the cleaning solution scattered from the substrate to the surrounding during the cleaning process after the chemical solution treatment; a second cover that catches the cleaning solution scattered from the substrate to the surroundings during the cleaning process after the chemical solution treatment when the chemical solution used in the chemical solution treatment is acidic; and A cover switching mechanism for moving at least one of the first cover and the second cover in the up-down direction relative to the substrate holding portion, thereby switching any one of the first cover and the second cover It is selectively arranged on the side of the substrate. The substrate processing apparatus according to any one of claims 1 to 3, further comprising: a conductivity measuring unit for measuring the conductivity of the used cleaning solution; In a state where the measured value of the electrical conductivity measuring unit is larger than a predetermined threshold value, the used cleaning liquid system is discarded and the purification treatment is not performed; When the measurement value of the electrical conductivity measuring section becomes equal to or less than the threshold value, the used cleaning liquid system is guided to the cleaning liquid refining section, and the refining process is performed. The substrate processing apparatus according to any one of claims 1 to 3, wherein the regeneration cleaning solution is supplied to the substrate during the cleaning process. The substrate processing apparatus according to claim 5, wherein the cleaning solution supply unit includes: The unused cleaning liquid spraying part is used to spray the unused cleaning liquid toward the substrate; The unused cleaning liquid piping guides the unused cleaning liquid from the supply source to the unused cleaning liquid ejection part; a regenerating cleaning solution ejecting part for ejecting the regenerating cleaning solution toward the substrate; and The regeneration cleaning liquid piping is independent from the unused cleaning liquid piping, and is used to guide the regeneration cleaning liquid from the cleaning liquid refining section to the regeneration cleaning liquid ejecting section. A substrate processing method, comprising: Step (a), holding the substrate in a horizontal state; Step (b), supplying a chemical solution to the substrate and performing a chemical solution treatment; step (c) of supplying a cleaning solution to the substrate after the step (b) and performing cleaning treatment; and In the step (d), the used cleaning liquid, which is the used cleaning liquid used in the above-mentioned step (c), is subjected to purification treatment including dilution, and a regenerated cleaning liquid that can be reused is generated. The substrate processing method according to claim 7, wherein in the step (d), when the chemical solution used in the chemical solution treatment is alkaline, the used cleaning is performed in the first refining section. When the chemical liquid used in the chemical liquid treatment is acidic, the used cleaning liquid is subjected to the above-mentioned refining treatment in a second refining section different from the first refining section. The substrate processing method according to claim 8, wherein in the step (c), the cleaning liquid is supplied to the substrate rotating around a center axis facing the up-down direction as a center; When the chemical solution used in the step (b) is alkaline, the cleaning solution scattered from the rotating substrate to the surroundings is caught by a first cover surrounding the substrate; When the chemical solution used in the step (b) is acidic, the cleaning solution scattered from the rotating substrate to the surroundings is caught by the second cover surrounding the substrate. The substrate processing method according to any one of claims 7 to 9, further comprising: a step (e) of measuring the electrical conductivity of the used cleaning solution before the step (d); In a state where the measured value in the step (e) is larger than a predetermined threshold value, the used cleaning liquid system is discarded and the step (d) is not performed; When the measured value in the aforementioned step (e) becomes equal to or less than the aforementioned threshold value, the aforementioned step (d) is performed. The substrate processing method according to any one of claims 7 to 9, wherein the regeneration cleaning solution is supplied to the substrate in the step (c). The substrate processing method according to any one of claims 7 to 9, wherein in the step (c), a cleaning solution is supplied to the substrate from a cleaning solution supply unit; The aforementioned cleaning solution supplying part is provided with: The unused cleaning liquid spraying part is used to spray the unused cleaning liquid toward the substrate; The unused cleaning liquid piping guides the unused cleaning liquid from the supply source to the unused cleaning liquid ejection part; a regenerating cleaning solution ejecting part for ejecting the regenerating cleaning solution toward the substrate; and The regeneration cleaning liquid piping is independent from the unused cleaning liquid piping, and is used for guiding the regeneration cleaning liquid to the regeneration cleaning liquid ejection part.

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