JP2005064312A - Substrate processing method and substrate processor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processor for reducing the quantity of pure water to be used for washing by substrate processing to develop and wash a substrate. <P>SOLUTION: This substrate processor is provided with a development processing part 10 for developing an exposed resist film formed on the surface of a substrate W with development liquid, and a washing processing part 12 for washing a developed substrate. A gas supply piping 82 is communicatively connected to a water tank 40 to store wash water 38 to be supplied to a spray nozzle 28 of the washing processing part, and carbon dioxide is supplied to the water tank, and carbon dioxide is dissolved in the wash water, and water dissolved with the carbon dioxide is supplied to the spray nozzle. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a substrate processing method and a substrate processing apparatus in which various substrates such as a semiconductor wafer, a glass substrate for a liquid crystal display (LCD), a glass substrate for a plasma display (PDP), and a printed substrate are developed and then washed with water.

  In the manufacturing process of semiconductor devices, liquid crystal display devices, etc., after developing and supplying a developing solution to a resist film after exposure formed on the surface of a substrate such as a semiconductor wafer or glass substrate, use pure water. The substrate is washed with water, and the developing solution on the substrate is replaced with pure water to stop the development reaction (see, for example, Patent Document 1). An example of a schematic configuration of a substrate processing apparatus used for performing such processing is shown in FIG. 4 as a schematic front view.

  In the substrate processing apparatus shown in FIG. 4, a first water washing processing unit 12 is provided adjacent to the development processing unit 10, and a second water washing processing unit 14 is provided adjacent to the first water washing processing unit 12. Yes. The development processing unit 10 includes a processing chamber 16, and a roller conveyor 18 that supports the substrate W and transports it in the horizontal direction is disposed inside the processing chamber 16. The substrate W is transported while being supported in a horizontal posture by the roller conveyor 18. This substrate W is a substrate after exposure, and an exposed resist film is deposited on the surface thereof. Near the inlet of the processing chamber 16, a discharge nozzle 20 having a slit-like discharge port formed at the lower end surface is disposed at a position directly above the substrate transfer path. Although not shown, a developer supply pipe is connected to the discharge nozzle 20 and the developer stored in the developer tank is supplied to the discharge nozzle 20 through the developer supply pipe. Then, when the substrate W is carried into the processing chamber 16 and passes directly under the discharge nozzle 20, the developer is discharged from the slit-like discharge port of the discharge nozzle 20, and the developer is applied to the entire surface of the substrate W. The development reaction proceeds in the process of being stacked and transporting the substrate W in the horizontal direction by the roller conveyor 18.

  The first water washing processing unit 12 includes a processing chamber 22, and a roller conveyor 24 that supports the substrate W in a horizontal posture and conveys the substrate W in the horizontal direction is disposed inside the processing chamber 22. In the vicinity of the inlet of the processing chamber 22, an inlet nozzle 26 that discharges cleaning water in a curtain shape to the upper surface of the substrate W is disposed. Further, a spray nozzle 28 is continuously provided along the substrate transport path above the substrate transport path. The inlet nozzle 26 and the spray nozzle 28 are respectively connected to the cleaning water supply pipe 30 through a flow path. The cleaning water supply pipe 30 is connected to the discharge port side of the pump 32, and a filter 34 is inserted in the cleaning water supply pipe 30. The suction port side of the pump 32 is connected through a pipe 36 to the vicinity of the bottom of the water storage tank 40 in which the cleaning water 38 is stored. A drain port 42 is formed at the bottom of the processing chamber 22, and a drain pipe 44 is connected to the drain port 42 in communication therewith.

  Further, the second water washing processing unit 14 includes a processing chamber 46, and a roller conveyor 48 that supports the substrate W in a horizontal posture and transports the substrate W in the horizontal direction is disposed inside the processing chamber 46. In the processing chamber 46, an upstream spray nozzle 50 and a downstream spray nozzle 52 are continuously provided above the substrate transport path along the substrate transport path. The upstream spray nozzle 50 is connected to the cleaning water supply pipe 54. The cleaning water supply pipe 54 is connected to the discharge port side of the pump 56, and a filter 58 is inserted in the cleaning water supply pipe 54. The suction port side of the pump 56 is connected to the vicinity of the bottom of the water storage tank 64 in which the cleaning water 62 is stored via the pipe 60. On the other hand, the downstream spray nozzle 52 is connected to a pure water supply pipe 66 that is connected to a pure water supply source (not shown). Further, the bottom of the processing chamber 46 is divided into an upstream section and a downstream section by a partition wall 68. A first drain port 70 is formed at the bottom upstream of the partition wall 68, and a first recovery pipe 72 is connected to the first drain port 70, and the first recovery pipe 72 is connected to the first drain pipe 70. A flow path is connected to the water storage tank 40 of the 1 water washing treatment unit 12. On the other hand, a second drain port 74 is formed at the bottom of the processing chamber 46 on the downstream side of the partition wall 68, and a second recovery pipe 76 is connected to the second drain port 74 and is connected to the second drain port 74. 2 A recovery pipe 76 is connected to the water storage tank 64 in a flow path.

In the substrate processing apparatus having the above-described configuration, pure water (straight water) is supplied to the downstream spray nozzle 52 of the second water washing processing unit 14, and discharged from the downstream spray nozzle 52 onto the substrate W to be substrate. The water used for the water washing of W flows through the second drainage port 74 provided at the bottom on the downstream side of the processing chamber 46, flows through the second recovery pipe 76, flows into the water storage tank 64, and is recovered. Since the water collected in the water storage tank 64 is reused as the washing water 62, it is supplied to the upstream spray nozzle 50 of the second washing unit 14. Further, the water discharged from the upstream spray nozzle 50 onto the substrate W and used for washing the substrate W passes through the first drain port 70 provided in the upstream bottom portion of the processing chamber 46, and the first recovery pipe 72. It flows in and flows into the water storage tank 40 of the first water washing treatment unit 12 and is collected. Since the water collected in the water storage tank 40 is reused as the washing water 38 again, it is supplied to the inlet nozzle 26 and the spray nozzle 28 of the first water washing treatment unit 12 respectively. The water discharged from the inlet nozzle 26 and the spray nozzle 28 onto the substrate W and used for washing the substrate W immediately after being developed in the development processing unit 10 was provided at the bottom of the processing chamber 22. It passes through the drain port 42 and is discharged through the drain pipe 44.
Japanese Patent Laid-Open No. 11-274265 (page 7-8, FIG. 1)

  In recent years, glass substrates for semiconductor wafers, LCDs, and PDPs have been increasing in size. With the increase in size of such substrates, the developer on the substrate is instantly purified with water in the washing process after the development process. It has become difficult to replace. If the developer on the substrate is not completely replaced with pure water within a short period of time, the development reaction will be stopped in part of the substrate, causing uneven development, and the uniformity of the pattern line width in the resist film will be impaired. Or In order to avoid such inconvenience, if the developer on the substrate is replaced with pure water in as short a time as possible, it is possible to wash in stages while reusing pure water as described above. A large amount of pure water (direct water) is required. In the above-described apparatus, when the water used for washing the substrate in the first processing unit 12 is reused without draining, the amount of pure water used is reduced, but the filter 34 is clogged immediately. Will occur.

  The present invention has been made in view of the above circumstances, and provides a substrate processing method capable of reducing the amount of pure water used for water washing in substrate processing in which the substrate is developed and then washed with water. It is an object of the present invention to provide a substrate processing apparatus capable of suitably performing the method.

  According to a first aspect of the present invention, there is provided a substrate processing method in which a substrate is washed with water after developing a resist film after exposure formed on the surface of the substrate, and the substrate after development processing using water in which carbon dioxide is dissolved. It is characterized by washing with water.

  According to a second aspect of the present invention, there is provided a substrate processing method for developing a resist film after exposure on a surface of a substrate, and then washing the substrate with water before cleaning the substrate before forming the resist film on the surface of the substrate. The water thus used is reused to wash the substrate after the development processing.

  The invention according to claim 3 is the substrate processing method according to claim 2, wherein carbon dioxide is dissolved in water used for cleaning the substrate before forming a resist film on the surface of the substrate, and the carbon dioxide is dissolved. The used water is reused for washing the substrate after the development processing.

  According to a fourth aspect of the present invention, in the substrate processing method according to any one of the first to third aspects, the substrate is rinsed while being transported while being inclined with respect to a horizontal plane in a direction perpendicular to the transport direction. Features.

  According to a fifth aspect of the present invention, there is provided a development processing unit for developing a resist film after exposure formed on the surface of a substrate with a developer, a discharge nozzle for discharging cleaning water to the surface of the substrate, and a cleaning water to the discharge nozzle. A pipe for supplying cleaning water, a water storage tank for storing cleaning water, and a liquid feeding means for supplying cleaning water from the water storage tank to the discharge nozzle through the pipe, and development processing in the development processing section In the substrate processing apparatus provided with a water washing processing unit for washing the substrate after being subjected to water washing, a gas dissolving means for dissolving carbon dioxide in the cleaning water stored in the water storage tank or the cleaning water flowing in the pipe is provided. It is characterized by that.

  According to a sixth aspect of the present invention, there is provided a development processing unit for developing a resist film after exposure formed on the surface of the substrate with a developer, a discharge nozzle for discharging cleaning water to the surface of the substrate, and a cleaning water to the discharge nozzle. And a washing unit for washing the substrate after being developed in the developing unit, and having a washing water supply means for supplying washing water to the discharge nozzle through the pipe In the substrate processing apparatus, the cleaning water supply means collects water used for cleaning the substrate discharged from the substrate cleaning unit that cleans the substrate before forming the resist film on the surface of the substrate. Connect the recovery tank and the recovery tank and the pipe directly to the flow path, or connect the pipe to the flow path and store the wash water, and connect the storage tank and the recovery tank to the flow path. Connecting piping and this connecting piping And feeding means for feeding the washing water to the discharge nozzle through a preliminary the pipe, characterized in that it is configured with.

  The invention according to claim 7 is the substrate processing apparatus according to claim 6, wherein the cleaning water stored in the recovery tank of the cleaning water supply means, or the cleaning water flowing in the communication pipe or the pipe, Alternatively, a gas dissolving means for dissolving carbon dioxide in the cleaning water stored in the water storage tank is provided.

  The invention according to claim 8 is the substrate processing apparatus according to any one of claims 5 to 7, wherein the water-washing processing section transports the substrate in an inclined direction with respect to a horizontal plane in a direction perpendicular to the transport direction. It is characterized by comprising a conveying means.

  According to the substrate processing method of the first aspect of the present invention, the water that has become weakly acidic due to the dissolution of carbon dioxide is supplied onto the substrate after the development processing, so that a developer that is usually strongly alkaline is quickly produced. After being neutralized, the development reaction stops on the entire surface of the substrate within a short time. Accordingly, since it is not necessary to use a large amount of pure water in order to replace the developer on the substrate with pure water in a short time, the amount of pure water used for washing can be reduced. Further, the occurrence of uneven development is prevented, and the uniformity of the pattern line width in the resist film is ensured. Further, the developer is neutralized with water in which carbon dioxide is dissolved, thereby preventing the resist wiring from being developed and partially exposed metal wiring such as aluminum being corroded or dissolved by strong alkali. . Furthermore, since the wastewater in which carbon dioxide is dissolved is naturally deaerated just by leaving it, there is no need to perform a special drainage treatment.

  According to the substrate processing method of the second aspect of the present invention, water used for cleaning the substrate before the resist coating step is reused for washing the substrate after the development processing. Even if the amount of pure water (direct water) used for washing is not increased, a large amount of water can be used to replace the developer on the substrate with pure water in a short time. Therefore, it is possible to reduce the amount of pure water used for washing the substrate after the development process, to prevent development unevenness, and to ensure the uniformity of the pattern line width in the resist film. In addition, since a large amount of water can be used without reusing the water used for washing the substrate without draining, problems such as clogging of the filter do not occur.

  In the substrate processing method according to the third aspect of the present invention, the amount of pure water used for washing the substrate after the development processing can be further reduced.

  In the substrate processing method of the invention according to claim 4, the developer quickly flows down from the substrate, and the cleaning water supplied to the upper surface of the substrate also quickly flows down, so that the developer and pure water on the substrate are more Since the replacement is promptly performed, corrosion and uneven development of the metal wiring can be more reliably suppressed.

  When the substrate processing apparatus of the invention according to claim 5 is used, carbon dioxide is dissolved in the cleaning water stored in the water tank or the cleaning water flowing in the pipe by the gas dissolving means, and the cleaning water in which the carbon dioxide is dissolved. Is supplied to the discharge nozzle, the cleaning water is discharged from the discharge nozzle to the surface of the substrate, and the substrate is washed with water. Therefore, the above-described effect of the method according to the first aspect of the present invention is exhibited.

  When the substrate processing apparatus of the invention according to claim 6 is used, water used for cleaning the substrate is recovered before forming a resist film on the surface of the substrate, and the recovered water is used for cleaning the substrate for washing. Since it is supplied to the discharge nozzle as water, the above-described effect by the method of the invention according to claim 2 is exhibited.

  In the substrate processing apparatus according to the seventh aspect of the present invention, the cleaning water stored in the recovery tank of the cleaning water supply means, the cleaning water flowing in the communication pipe or the piping, or the water storage tank is stored by the gas dissolving means. Since carbon dioxide is dissolved in the cleaning water stored in the substrate, the cleaning water in which carbon dioxide is dissolved is supplied to the discharge nozzle, the cleaning water is discharged from the discharge nozzle to the surface of the substrate, and the substrate is washed with water. The amount of pure water used for washing the substrate after the development treatment can be further reduced.

  In the substrate processing apparatus of the invention according to claim 8, the developer is quickly washed down from the substrate by being washed with water while being transported in an inclined posture, and the washing water supplied to the upper surface of the substrate is also promptly It flows down and the developer and pure water on the substrate are replaced more quickly, so that corrosion of metal wiring and uneven development can be more reliably suppressed.

  An embodiment for carrying out the present invention will be described with reference to FIGS. 1 to 3.

  FIG. 1 is a schematic front view showing a part of a schematic configuration of a substrate processing apparatus according to an embodiment of the first invention. This substrate processing apparatus is configured by connecting a development processing unit 10, a first water washing processing unit 12 and a second water washing processing unit 14, and the basic configuration of the apparatus is the above-described substrate processing apparatus shown in FIG. It is the same. Therefore, the same components as those used in FIG. 4 are denoted by the same reference numerals as those used in FIG. 4 and description thereof will be omitted. In addition, in FIG. 1, illustration of the structure of the 2nd washing process part 14 is abbreviate | omitted, but the 2nd washing process part 14 has the structure similar to the apparatus shown in FIG.

  The substrate processing apparatus includes means for dissolving carbon dioxide by bubbling in the cleaning water 38 stored in the water storage tank 40 of the first water cleaning processing unit 12. That is, a gas supply port 78 is formed in the vicinity of the bottom of the water storage tank 40, and the gas supply port 78 is connected to a carbon dioxide gas supply source (not shown) such as a gas cylinder and an on-off valve 80 is inserted. A gas supply pipe 82 is connected in communication. Then, in the wash water 38 discharged from the first drain port 70 of the processing chamber 46 of the second water washing processing unit 14 and collected and stored in the water storage tank 40 of the first water washing processing unit 12 through the first recovery pipe 72. Carbon dioxide gas is blown from the gas supply port 78 to dissolve the carbon dioxide in the cleaning water 38 in the water storage tank 40. The cleaning water 38 in which carbon dioxide is dissolved is supplied from the inside of the water storage tank 40 to the inlet nozzle 26 and the spray nozzle 28 through the cleaning water supply pipe 30. Then, the cleaning water 38 in which carbon dioxide is dissolved is discharged from the inlet nozzle 26 and the spray nozzle 28 onto the substrate W, and used for rinsing the substrate W immediately after being developed in the development processing unit 10. The means for dissolving carbon dioxide in the cleaning water 38 supplied to the inlet nozzle 26 and the spray nozzle 28 is not limited to the one for bubbling carbon dioxide gas in the cleaning water 38 in the water storage tank 40, and any type is available. For example, a gas dissolving module is inserted in the middle of the washing water supply pipe 30, a gas supply pipe is connected to the gas dissolving module, and carbon dioxide is introduced into the washing water flowing in the washing water supply pipe 30. It may be configured to be dissolved.

  In this substrate processing apparatus, carbon dioxide is dissolved in the cleaning water 38 in the water storage tank 40, so that the cleaning water becomes weakly acidic and the weakly acidic cleaning water is supplied onto the substrate W after the development processing. The For this reason, the strongly alkaline developer is quickly neutralized, and the development reaction is stopped on the entire surface of the substrate W within a short time. Thereafter, the neutralized developer is washed away from the substrate W by the washing water discharged from the spray nozzle 28 of the first water washing treatment unit 12 and the spray nozzles 50 and 52 of the second water washing treatment unit 14, respectively. To do. Therefore, it is not necessary to use a large amount of washing water in order to replace the developer on the substrate with pure water in a short time, and the amount of pure water used can be reduced. Further, water containing carbon dioxide discharged from the inlet nozzle 26 and the spray nozzle 28 onto the substrate W and used for washing the substrate W is discharged from the drain port 42 at the bottom of the processing chamber 22 through the drain pipe 44. However, since the wastewater in which carbon dioxide is dissolved is naturally degassed by simply leaving it, there is no need to perform a special drainage treatment.

  Next, FIG. 2 is a schematic plan view showing the overall configuration of the substrate processing apparatus according to the embodiment of the second invention. This substrate processing apparatus is an apparatus called a coater / developer, a coating process in which a photoresist solution is applied to the surface of the substrate to form a resist film on the substrate surface, and a predetermined pattern is baked on the resist film formed on the substrate surface. It is an apparatus that continuously performs a series of processes of an exposure process and a development process of developing a resist film on the substrate after exposure while transporting the substrate. A detailed description of the apparatus will be omitted here, and only a brief description of each component unit will be given.

  The indexer unit 84 is a part that takes out a substrate before processing from a cassette (not shown), sends the substrate to the processing unit, receives a processed substrate from the processing unit, and stores the substrate in the cassette. The UV ozone cleaning unit 86 is a part that irradiates the substrate with ultraviolet rays to oxidatively decompose organic contaminants on the substrate surface. The cleaning unit 88 performs scrub cleaning with a roll brush, ultrasonic spray cleaning, high-pressure jet spray cleaning, and the like. The substrate before the coating process is a portion for cleaning using pure water, and the drying unit 90 is a portion for drying the substrate after cleaning. The dehydration bake unit 92 applies HMDS (hexamethyldisilazane) to the substrate while heating the substrate in order to remove moisture from the substrate by heating and improve the adhesion between the substrate and the resist film as a pretreatment for resist coating. It is a part to do. The resist coating unit 94 is a part for applying a photoresist solution to the surface of the substrate by a spin coater to form a resist film on the surface of the substrate. The pre-baking unit 96 is a solvent solution from the resist film formed on the surface of the substrate. This is a part where the substrate is heat-treated for the purpose of evaporating and enhancing the adhesion of the resist film to the substrate. The exposure machine 98 is a part that exposes the resist film on the substrate in a predetermined pattern, and the interface unit 100 carries out the substrate when necessary when carrying the substrate into the exposure machine 98 and when removing the substrate from the exposure machine. Is a part to temporarily store The development processing unit 102 is a part for developing a resist film by supplying a developing solution to the substrate after exposure by roller-conveying paddle development, static paddle development, paddle spray development, or the like. Reference numeral 104 and the second water washing treatment unit 106 are portions for washing the substrate after the development treatment, and the drying unit 108 is a portion for drying the substrate after the washing treatment. The development processing unit 102, the first water washing processing unit 104, and the second water washing processing unit 106 are processes corresponding to the development processing unit 10, the first water washing processing unit 12, and the second water washing processing unit 14 of the apparatus shown in FIG. Is to do. Further, the post-bake unit 110 heats the substrate for the purpose of evaporating and removing the developer and rinse solution (pure water) remaining in or on the resist film on the substrate, curing the resist film, and enhancing adhesion to the substrate. The conveyor unit 112 is a part to be processed, and is for carrying a substrate by a roller conveyor or the like.

  In the above-described configuration, the substrate processing apparatus includes a first water rinsing unit that uses pure water to discharge water from the cleaning unit 88 that performs substrate cleaning before the coating process, and rinsing the substrate after development processing. The washing unit 88 and the first water washing treatment unit 104 are connected in a flow path by a communication pipe 114 so that the washing water can be reused in the treatment unit 104. FIG. 3 schematically showing the configuration of a part of the apparatus, the drain port 118 is formed at the bottom of the processing chamber 116 of the cleaning unit 88, and the recovery pipe 120 communicates with the drain port 118. It is connected. In addition, a recovery tank 122 is provided in the processing chamber 116, and a front end of the recovery pipe 120 is disposed in the recovery tank 122. In the cleaning unit 88, the pure water supplied to the spray nozzle 126 through the pure water supply pipe 124 and ejected from the spray nozzle 126 and used for cleaning the substrate W flows down to the inner bottom of the processing chamber 116, and the processing chamber The water is collected in the collection tank 122 from the drain port 118 of 116 through the collection pipe 120. Further, a communication pipe 114 is connected in communication with the vicinity of the bottom of the recovery tank 122, and the first end of the communication pipe 114 is connected to the water storage tank 40 of the first water washing treatment unit 104 (12). A recovery pipe 72 is connected in communication. A pump 128 and a filter 130 are respectively inserted in the communication pipe 114. Then, the water 132 recovered in the recovery tank 122 is supplied to the water storage tank 40 of the first water washing processing unit 104 (12) through the communication pipe 114 and reused as the cleaning water 38. .

  The leading end of the communication pipe 114 may be disposed in the water storage tank 40 of the first water washing treatment unit 104 (12), or the flow path is directly connected in the middle of the washing water supply pipe 30. You may make it do.

  In the substrate processing apparatus having the configuration shown in FIGS. 2 and 3, the pure water used for cleaning the substrate W in the cleaning unit 88 before the resist coating process is used in the first water cleaning processing unit 104 after the development processing. Since it is reused for washing the substrate W, the developer on the substrate W can be made pure water in a short time without increasing the amount of pure water (direct water) used for washing the substrate W after development. Large amounts of water can be used to replace. Therefore, the amount of pure water used for washing the substrate after the development processing can be reduced.

  Further, in the substrate processing apparatus shown in FIGS. 2 and 3, gas dissolution for dissolving carbon dioxide in the cleaning water recovered in the recovery tank 122 by the cleaning unit 88 and reused in the first water cleaning processing unit 104 (12). Means may be provided to wash the substrate W using washing water in which carbon dioxide is dissolved. For example, as shown by a two-dot chain line in FIG. 3, a gas dissolution module 134 is inserted in the middle of the cleaning water supply pipe 30 of the first water washing processing unit 12, and a carbon dioxide gas supply source such as a gas cylinder is inserted into the gas dissolution module 134. A gas supply pipe 138 connected to a flow path (not shown) and having an on-off valve 136 interposed therein is connected to dissolve carbon dioxide in the wash water flowing in the wash water supply pipe 30. Alternatively, similarly to the apparatus shown in FIG. 1, carbon dioxide is bubbled into the cleaning water 38 stored in the water tank 40 of the first water washing processing unit 12 so that carbon dioxide is dissolved in the cleaning water 38. Also good. Further, carbon dioxide may be bubbled into the water 132 recovered in the recovery tank 122 of the cleaning unit 88 to dissolve carbon dioxide, and furthermore, the cleaning unit 88 and the first water washing processing unit 104 Alternatively, a gas dissolution module may be inserted in the middle of the communication pipe 114 that communicates the flow path, and carbon dioxide may be supplied to the gas dissolution module to dissolve carbon dioxide in the water flowing through the communication pipe 114. With such a configuration, the above-described effect of the apparatus shown in FIG. 1 can be further obtained, and the amount of pure water used for washing the substrate after development processing can be further reduced.

  Moreover, in the apparatus of each embodiment of the first and second inventions described above, the substrate W was washed in a horizontal posture in the first water washing treatment units 12 and 104 and the second water washing treatment units 14 and 106. By setting the substrate to a slightly inclined posture instead of a horizontal posture, the developer remaining on the substrate and pure water are more quickly replaced, and corrosion and processing unevenness of the metal wiring are more reliably suppressed. For example, the roller conveyor 18 on the outlet side of the development processing unit 10 can be inclined at a predetermined angle, for example, 5 °, either to the left or right in the transport direction (with respect to the horizontal plane in the direction orthogonal to the transport direction). The roller conveyors 24 and 46 of the water washing treatment units 12 and 104 and the second water washing treatment units 14 and 106 may be provided by being inclined by the same predetermined angle. According to this configuration, when the substrate is conveyed to the exit side of the development processing unit 10, the substrate is inclined by inclining the roller conveyor 18. As a result, the developer on the substrate flows down, and the residual amount on the substrate becomes extremely small. And a board | substrate is conveyed to the 1st water washing process parts 12 and 104 with the inclination attitude | position, and cleaning water is supplied to an upper surface there. The cleaning water supplied at this time also quickly flows down due to the inclination of the substrate, and the developer remaining slightly on the substrate is quickly replaced and washed away. As a result, the developer and pure water remaining on the substrate are replaced more quickly, and corrosion and uneven processing of the metal wiring are more reliably suppressed. In particular, the use of carbon dioxide dissolved in cleaning water is extremely effective in suppressing corrosion of metal wiring and processing unevenness in combination with the neutralizing effect of the developer by the cleaning water.

1 is a schematic front view showing a part of a schematic configuration of a substrate processing apparatus according to an embodiment of the first invention. It is a schematic plan view which shows embodiment of 2nd invention and shows the whole structure of a substrate processing apparatus. FIG. 3 is a schematic front view showing a partial configuration of the substrate processing apparatus shown in FIG. 2. It is a typical front view which shows an example of the schematic structure of the conventional substrate processing apparatus which wash | cleans with water after developing a board | substrate.

Explanation of symbols

W substrate 10, 102 Development processing unit 12, 104 First water washing processing unit 14, 106 Second water washing processing unit 16 Processing chamber of development processing unit 18, 24, 48 Roller conveyor 20 Developer discharge nozzle 22 First water washing processing unit Processing chamber 26 Inlet nozzle 28, 50, 52, 126 Spray nozzle 30, 54 Wash water supply piping 32, 56, 128 Pump 34, 58, 130 Filter 38, 62 Wash water 40, 64 Reservoir 42, 70, 74, 118 Drain port 44 Drain pipe 46 Processing chamber 66, 124 of the second water washing treatment section Pure water supply pipe 72, 76, 120 Recovery pipe 78 Gas supply port 82, 138 Gas supply pipe 88 Cleaning unit 114 Communication pipe 116 Cleaning unit processing chamber 122 Recovery tank 132 Recovered water 134 Gas dissolution module Rule

Claims (8)

In the substrate processing method of washing the substrate with water after developing the exposed resist film formed on the surface of the substrate,
A substrate processing method comprising washing a substrate after development using water in which carbon dioxide is dissolved. In the substrate processing method of washing the substrate with water after developing the exposed resist film formed on the surface of the substrate,
A substrate processing method, wherein water used for cleaning a substrate before forming a resist film on the surface of the substrate is reused to wash the substrate after development processing.   3. The carbon dioxide is dissolved in water used for cleaning the substrate before forming a resist film on the surface of the substrate, and the water in which the carbon dioxide is dissolved is reused for washing the substrate after development processing. Substrate processing method.   The substrate processing method according to any one of claims 1 to 3, wherein the substrate is washed while being transported while being inclined with respect to a horizontal plane in a direction orthogonal to the transport direction. A development processing section for developing a resist film after exposure formed on the surface of the substrate with a developer;
A discharge nozzle for discharging cleaning water to the surface of the substrate, a pipe for supplying cleaning water to the discharge nozzle, a water storage tank for storing cleaning water, and a cleaning water from the water storage tank to the discharge nozzle through the pipe A washing unit for washing the substrate after being developed in the developing unit,
In a substrate processing apparatus comprising:
A substrate processing apparatus comprising gas dissolving means for dissolving carbon dioxide in cleaning water stored in the water tank or cleaning water flowing in the pipe. A development processing section for developing a resist film after exposure formed on the surface of the substrate with a developer;
A discharge nozzle for discharging the cleaning water to the surface of the substrate, a pipe for supplying the cleaning water to the discharge nozzle, and a cleaning water supply means for supplying the cleaning water to the discharge nozzle through the pipe, A water washing treatment unit for washing the substrate after being developed in the development treatment unit;
In a substrate processing apparatus comprising:
The washing water supply means
A recovery tank for recovering water used for cleaning the substrate, which is discharged from a substrate cleaning unit that cleans the substrate before forming a resist film on the surface of the substrate;
The recovery tank and the pipe are directly connected to the flow path, or a connecting pipe for connecting the flow path between the storage tank and the recovery tank by providing a water storage tank in which the pipe is connected to the flow path and storing cleaning water. When,
Liquid supply means for supplying cleaning water to the discharge nozzle through the communication pipe and the pipe;
A substrate processing apparatus, comprising:   Carbon dioxide is dissolved in the cleaning water stored in the recovery tank of the cleaning water supply means, the cleaning water flowing in the communication pipe or the piping, or the cleaning water stored in the water storage tank. The substrate processing apparatus according to claim 6, further comprising gas dissolving means.   The substrate processing apparatus according to any one of claims 5 to 7, wherein the rinsing processing unit includes transport means for transporting the substrate while being inclined with respect to a horizontal plane in a direction orthogonal to the transport direction.

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