JP4409901B2 - Residual liquid removal device - Google Patents

Residual liquid removal device Download PDF

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JP4409901B2
JP4409901B2 JP2003339839A JP2003339839A JP4409901B2 JP 4409901 B2 JP4409901 B2 JP 4409901B2 JP 2003339839 A JP2003339839 A JP 2003339839A JP 2003339839 A JP2003339839 A JP 2003339839A JP 4409901 B2 JP4409901 B2 JP 4409901B2
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JP2005103434A (en
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大輔 菅長
暢浩 西川
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Sumitomo Precision Products Co Ltd
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本発明は、平流し式と呼ばれる基板搬送式の基板処理設備において、特定の処理液を使用する処理ゾーンの出口部等で基板の表面に残存する処理液を除去する残液除去装置に関する。   The present invention relates to a residual liquid removing apparatus that removes a processing liquid remaining on the surface of a substrate at an exit portion of a processing zone in which a specific processing liquid is used in a substrate transfer type substrate processing facility called a flat flow type.

液晶パネルの製造では、素材である大面積のガラス基板の表面にレジスト塗布、現像、エッチング、レジスト剥離の各処理が繰り返し実施されることにより、基板表面に集積回路が形成される。各処理方式の代表的なものの一つが平流しと呼ばれる基板搬送方式であり、基板を水平方向に搬送しながらその表面に各種の処理を行う。   In the manufacture of a liquid crystal panel, an integrated circuit is formed on the substrate surface by repeatedly performing resist coating, development, etching, and resist stripping on the surface of a large-area glass substrate that is a material. One of the typical processing methods is a substrate transfer method called flat flow, in which various treatments are performed on the surface of the substrate while transferring the substrate in the horizontal direction.

例えば、平流し式のレジスト剥離処理では、水平姿勢で水平方向に搬送される基板の表面に剥離液が供給され、次いでその表面が純水により洗浄される。剥離液としてはアミン系のように、水と混ざると強アルカリ性を示す有機剥離液が多用されている。このような剥離液により処理された基板の表面を直接水洗すると、強アルカリ液が生成され、これによって基板表面に染みなどが発生する。このため、剥離液による処理と水洗処理との間で、基板表面を置換液と呼ばれるジメチルスルホシキド(DMSO)などのアミンを含まない有機溶剤で置換洗浄するのが通例になっている。   For example, in the flat-flow resist stripping process, the stripping solution is supplied to the surface of the substrate that is transported horizontally in a horizontal posture, and then the surface is cleaned with pure water. As the stripping solution, organic stripping solutions that exhibit strong alkalinity when mixed with water, such as amine-based ones, are frequently used. When the surface of the substrate treated with such a stripping solution is washed directly with water, a strong alkaline solution is generated, which causes a stain or the like on the substrate surface. For this reason, it is a common practice to perform substitution cleaning on the substrate surface with an organic solvent not containing an amine such as dimethyl sulfoxide (DMSO) called a substitution solution between the treatment with the stripping solution and the water washing treatment.

剥離ゾーン及び置換ゾーンの各出口部では、各処理液が次のゾーンに侵入するのを阻止するために、基板の表面が乾燥しない程度にその表面に残存する処理液を除去することが行われている。そして、この除去装置としては、エアをカーテン状に噴出するスリットノズルを用いたエアナイフ方式の除去装置が使用されている(特許文献1参照)。   In order to prevent each processing solution from entering the next zone at each outlet of the peeling zone and the replacement zone, the processing solution remaining on the surface is removed to such an extent that the surface of the substrate is not dried. ing. And as this removal apparatus, the air knife type removal apparatus using the slit nozzle which ejects air in the shape of a curtain is used (refer patent document 1).

特開2003−92284号公報JP 2003-92284 A

しかしながら、エアナイフ方式の残液除去装置では、基板の表面を乾燥させないためにエア圧を大きくできないこともあって、水洗ゾーンでレジストが現れ、基板の表面に再付着する問題がある。これは、剥離ゾーンで使用した剥離液が基板上に残って下流側へ持ち出され、その剥離液に溶解するレジストが水洗ゾーンで発現し、基板の表面に再付着するためと考えられる。   However, in the air knife type residual liquid removing apparatus, the air pressure cannot be increased because the surface of the substrate is not dried, and there is a problem that the resist appears in the washing zone and reattaches to the surface of the substrate. This is presumably because the stripping solution used in the stripping zone remains on the substrate and is taken out downstream, and the resist dissolved in the stripping solution appears in the washing zone and reattaches to the surface of the substrate.

本発明の目的は、搬送される基板の表面を乾燥させることなく、その表面に処理液が残存することに起因する下流側への異物流出を防止できる残液除去装置を提供することにある。   An object of the present invention is to provide a residual liquid removing device that can prevent the outflow of foreign matters downstream due to the treatment liquid remaining on the surface of the substrate to be transported without drying the surface.

上記目的を達成するために、本発明の残液除去装置は、搬送される基板の表面に処理液としてレジスト剥離液、置換液又は現像液を供給してそれぞれの処理を行う搬送式基板処理設備に使用されて、その基板の表面に残る処理液を除去する残液除去装置であって、前記基板の表面に残る処理液をエアナイフにより除去する第1の液切り手段と、第1の液切り手段の下流側に配置されて処理液の新液を前記基板の表面にカーテン状に供給してパドル状態に載せる新液供給手段と、新液供給手段の更に下流側に配置されて、前記基板の表面に残る処理液をエアナイフにより除去する第2の液切り手段とを具備している。 In order to achieve the above object, the residual liquid removing apparatus of the present invention is a transport type substrate processing facility for supplying a resist stripping solution, a substitution solution or a developing solution as a processing liquid to the surface of a substrate to be transported and performing each processing. A first liquid draining device for removing the processing liquid remaining on the surface of the substrate, the first liquid draining means for removing the processing liquid remaining on the surface of the substrate with an air knife; A new liquid supply means disposed on the downstream side of the means to supply a new liquid of the processing liquid to the surface of the substrate in a curtain form and placed in a paddle state; and a substrate disposed further downstream of the new liquid supply means. And a second liquid draining means for removing the treatment liquid remaining on the surface of the substrate with an air knife.

本発明の残液除去装置では、第1の液切り手段により基板上の処理液を排除するが、基板の乾燥を阻止するために、その処理液を完全に排除することはできない。この処理液は、使用後の旧液であるため、多量の異物を含んでいる。このため、基板上に残る処理液と共に、異物が下流側へ搬送される。しかし、その下流側で新液供給手段により基板の表面に新液が供給され、旧液と置換される。そして、その更に下流側で第2の液切り手段により基板上の処理液を排除する。この液除去も乾燥防止のため完全に行うことができず、液除去後も基板上に処理液が残るが、その処理液は実質的に新液であるため、下流側への若干量の処理液の流出は伴うものの、その流出に伴う異物の流出は阻止される。   In the residual liquid removing apparatus of the present invention, the processing liquid on the substrate is removed by the first liquid draining means, but the processing liquid cannot be completely eliminated in order to prevent drying of the substrate. Since this treatment liquid is an old liquid after use, it contains a large amount of foreign matter. For this reason, a foreign material is conveyed downstream with the process liquid which remains on a board | substrate. However, the new liquid is supplied to the surface of the substrate by the new liquid supply means on the downstream side, and is replaced with the old liquid. Then, on the further downstream side, the processing liquid on the substrate is removed by the second liquid draining means. This liquid removal cannot be completely performed to prevent drying, and the processing liquid remains on the substrate even after the liquid is removed. However, since the processing liquid is substantially a new liquid, a small amount of processing is performed downstream. Although the outflow of liquid is accompanied, the outflow of foreign substances accompanying the outflow is prevented.

従って、例えばレジスト剥離設備では、剥離ゾーンの出口部、或いは剥離ゾーン及び置換ゾーンの各出口部に本発明の残液除去装置を設けることにより、基板表面の乾燥が回避されつつ、水洗ゾーンでのレジストの発現、再付着が防止される。   Therefore, for example, in the resist stripping equipment, by providing the residual liquid removing device of the present invention at the exit of the stripping zone or each of the stripping zone and the replacement zone, drying of the substrate surface is avoided, while in the washing zone. Resist development and re-adhesion are prevented.

本発明の残液除去装置は、新液供給を間に挟む2段のエアナイフによる液切りにより、搬送される基板の表面を乾燥させることなく、その表面に処理液が残存することに起因する下流側への異物流出を防止できる。   The apparatus for removing residual liquid according to the present invention is based on the fact that the processing liquid remains on the surface of the substrate being transported without drying the surface of the substrate being transported by the two-stage air knife sandwiching the supply of new liquid. Foreign matter outflow to the side can be prevented.

以下に本発明の実施形態を図面に基づいて説明する。図1は本発明の一実施形態を示す基板処理設備の構造説明図、図2は同実施形態における残液除去装置の機能説明図である。   Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a structural explanatory view of a substrate processing facility showing an embodiment of the present invention, and FIG. 2 is a functional explanatory view of a residual liquid removing apparatus in the same embodiment.

本実施形態の残液除去装置は、液晶パネルを製造するためのレジスト剥離設備に設けられている。このレジスト剥離設備は、水平姿勢で水平方向に搬送されるガラス基板40が剥離ゾーン10、置換ゾーン20及び水洗ゾーン30を順番に通過する構成になっている。基板搬送機構は、基板搬送方向に配列された多数個の搬送ローラ50により、ガラス基板40を下方から支持しつつ搬送する。   The residual liquid removing apparatus of this embodiment is provided in a resist stripping facility for manufacturing a liquid crystal panel. This resist stripping equipment is configured such that a glass substrate 40 that is transported horizontally in a horizontal posture passes through the stripping zone 10, the replacement zone 20, and the water washing zone 30 in order. The substrate transport mechanism transports the glass substrate 40 while supporting the glass substrate 40 from below by a large number of transport rollers 50 arranged in the substrate transport direction.

剥離ゾーン10は、基板10の表面に剥離液を供給するために、その剥離液を散布するシャワーユニット11などを有している。置換ゾーン20は、基板10の表面に置換液を供給するために、その置換液を散布するシャワーユニット21などを有している。水洗ゾーン30は、基板10の表面に洗浄水を供給するためのシャワーユニット31、エアナイフ式の両面乾燥装置32などを有している。   The stripping zone 10 has a shower unit 11 for spraying the stripping solution in order to supply the stripping solution to the surface of the substrate 10. The replacement zone 20 includes a shower unit 21 for spraying the replacement liquid to supply the replacement liquid to the surface of the substrate 10. The water washing zone 30 includes a shower unit 31 for supplying cleaning water to the surface of the substrate 10, an air knife type double-sided drying device 32, and the like.

本実施形態では、その残液除去装置は、このようなレジスト剥離設備における剥離ゾーン10の出口部及び置換ゾーン20の出口部に設けられている。剥離ゾーン10に設けられた残液除去装置12は、第1の液切り手段12a、新液供給手段12b及び第2の液切り手段12cを基板搬送方向に沿って順番に配置した構成になっている。   In the present embodiment, the residual liquid removing device is provided at the outlet of the peeling zone 10 and the outlet of the replacement zone 20 in such a resist stripping facility. The residual liquid removing device 12 provided in the peeling zone 10 has a configuration in which a first liquid draining means 12a, a new liquid supplying means 12b, and a second liquid draining means 12c are arranged in order along the substrate transport direction. Yes.

第1の液切り手段12aは、基板搬送ラインを挟む上下一組のスリットノズルからなる。各スリットノズルは、基板40の表面(又は裏面)に付着残存する剥離液を除去するべく、その表面(又は裏面)に向けてエアを、板幅方向に連続するカーテン状(薄膜状)に吐出する。新液供給手段12bは、基板搬送ラインの上方に設けられた複数のフラットノズルからなる。複数のフラットノズルは、液体を三角形状の薄膜にして吐出する山型フラットノズルであり、板幅方向に連続したカーテン状の液膜を形成するべく、基板搬送方向に直角な方向に配列されている。そして、基板40の表面上に剥離液、特に未使用の新液が表面張力で保持される所謂パドル状態が実現されるように、新液供給手段12bはその新液を基板40の表面に緩やかに吐出する。第2の液切り手段12cは、基板搬送ラインの上方に基板搬送方向に直交して配置されたスリットノズルであり、基板40の表面上に残る剥離液を除去するべく、その表面に向けてエアを板幅方向に連続するカーテン状(薄膜状)に吐出する。 The first liquid draining means 12a includes a pair of upper and lower slit nozzles that sandwich the substrate transport line. Each slit nozzle discharges air toward the front surface (or back surface) in a curtain shape (thin film shape) continuous in the plate width direction in order to remove the peeling liquid remaining on the front surface (or back surface) of the substrate 40. To do. The new liquid supply unit 12b includes a plurality of flat nozzles provided above the substrate transfer line. The plurality of flat nozzles is a mountain-shaped flat nozzle that discharges liquid in a triangular thin film, and is arranged in a direction perpendicular to the substrate transport direction to form a curtain-like liquid film continuous in the plate width direction. ing. Then, the new liquid supply means 12b gently puts the new liquid on the surface of the substrate 40 so as to realize a so-called paddle state in which the peeling liquid, in particular, an unused new liquid is held by the surface tension on the surface of the substrate 40. To discharge. The second liquid draining means 12c is a slit nozzle that is disposed above the substrate transport line and perpendicular to the substrate transport direction, and air is directed toward the surface in order to remove the stripper remaining on the surface of the substrate 40. Is discharged in a curtain shape (thin film shape) continuous in the plate width direction.

第1の液切り手段12a及び第2の液切り手段12cにおけるスリットノズルは、液体除去効率を高めるために、基板搬送方向に対向する所謂カウンター方向に傾斜して設けられている。これに対して、液体を載せる新液供給手段12bにおける複数の山型フラットノズルは、その液体を上から下へ垂直に吐出する。 The slit nozzles in the first liquid draining means 12a and the second liquid draining means 12c are provided so as to be inclined in a so-called counter direction facing the substrate transport direction in order to increase the liquid removal efficiency. On the other hand, the plurality of crest-shaped flat nozzles in the new liquid supply means 12b on which the liquid is placed discharges the liquid vertically from top to bottom.

置換ゾーン20に設けられた残液除去装置22は、剥離ゾーン10に設けられた残液除去装置12と実質的に同じ構成であり、第1の液切り手段12a、新液供給手段12b及び第2の液切り手段12cに各対応する第1の液切り手段22a、新液供給手段22b及び第2の液切り手段22cを備えている。   The residual liquid removing device 22 provided in the replacement zone 20 has substantially the same configuration as the residual liquid removing device 12 provided in the peeling zone 10, and includes a first liquid draining means 12a, a new liquid supplying means 12b, and a first liquid removing means 12. Each of the two liquid draining means 12c includes a first liquid draining means 22a, a new liquid supply means 22b, and a second liquid draining means 22c.

次に、本実施形態の残液除去装置を装備したレジスト剥離設備の機能について説明する。   Next, the function of the resist stripping equipment equipped with the residual liquid removing device of this embodiment will be described.

ガラス基板40が剥離ゾーン10を通過する間に、基板40の表面にシャワーユニット11などから剥離液が大量に供給される。これにより、基板40の表面に付着するレジストが溶解除去される。その基板40が剥離ゾーン10の出口部に到達すると、基板10の表面上に残存する剥離液が残液除去装置12により除去される。   While the glass substrate 40 passes through the peeling zone 10, a large amount of peeling liquid is supplied to the surface of the substrate 40 from the shower unit 11 or the like. Thereby, the resist adhering to the surface of the substrate 40 is dissolved and removed. When the substrate 40 reaches the outlet of the peeling zone 10, the peeling liquid remaining on the surface of the substrate 10 is removed by the residual liquid removing device 12.

具体的に説明すると、まず基板10の両面に付着残存する使用済みの剥離液(旧液)が第1の液切り手段12aによるエアナイフにより、表面上に僅かの剥離液(旧液)を残して除去される。次に、新液供給手段12bにより形成される液膜中を基板40が通過することにより、基板40の表面上に未使用の剥離液(新液)がパドル状態となるように少量供給される。最後に、基板40の表面上に載る剥離液(新液)が、第2の液切り手段12cによるエアナイフにより、表面上に僅かの剥離液(新液)を残して除去される。   More specifically, first, the used stripping solution (old solution) remaining on both surfaces of the substrate 10 leaves a slight stripping solution (old solution) on the surface by the air knife by the first liquid draining means 12a. Removed. Next, when the substrate 40 passes through the liquid film formed by the new liquid supply means 12b, a small amount of unused stripping liquid (new liquid) is supplied onto the surface of the substrate 40 so as to be in a paddle state. . Finally, the stripping solution (new solution) placed on the surface of the substrate 40 is removed by the air knife by the second liquid draining means 12c leaving a slight stripping solution (new solution) on the surface.

第1の液切り手段12aによる残液除去だけだと、基板40の表面上に僅かに残る剥離液(旧液)が次の置換ゾーン20へ送られる。剥離液が下流側へ持ち出されることによるアルカリ化の問題は置換ゾーン20で解消される。しかし、剥離液の持ち出しに伴って、剥離液に含まれるレジストが置換ゾーン20へ侵入し、ひいては水洗ゾーン30へ侵入する事態は避けられない。   If only the residual liquid is removed by the first liquid draining means 12 a, the stripping liquid (old liquid) that remains slightly on the surface of the substrate 40 is sent to the next replacement zone 20. The problem of alkalinization due to the stripping solution being taken downstream is eliminated in the replacement zone 20. However, it is inevitable that the resist contained in the stripping solution enters the substitution zone 20 and eventually enters the washing zone 30 as the stripping solution is taken out.

しかるに、本実施形態では、第1の液切り手段12aによる残液除去の後、基板40の表面に新液供給手段12bにより未使用の剥離液(新液)が供給される。これにより、基板40の表面上に残る使用後の剥離液(旧液)が未使用の剥離液(新液)により置換される。その後、第2の液切り手段12cにより、基板40の表面上に残る未使用の剥離液(新液)が、乾燥防止のための僅かの量を残して除去される。この残液は下流側へ持ち出されるが、レジストを実質含まない。このため、下流側へのレジストの持ち出しは実質的に生じない。   However, in this embodiment, after the residual liquid is removed by the first liquid draining means 12a, an unused stripping liquid (new liquid) is supplied to the surface of the substrate 40 by the new liquid supply means 12b. Thereby, the used stripping solution (old solution) remaining on the surface of the substrate 40 is replaced with an unused stripping solution (new solution). Thereafter, the unused liquid remover (new liquid) remaining on the surface of the substrate 40 is removed by the second liquid draining means 12c leaving a slight amount for preventing drying. This residual liquid is taken downstream, but does not substantially contain resist. For this reason, the carry-out of the resist to the downstream side does not substantially occur.

剥離ゾーン10を通過した基板40は置換ゾーン20に進入し、基板10の表面上に残る剥離液が置換液で置換され、その後、水洗ゾーン30に進入することにより、強アルカリ化の問題は防止される。置換ゾーン20の出口部でも、残液除去装置22により、新液供給を挟んだ2段のエアナイフによる液切りが行われることにより、水洗ゾーン30への旧液の侵入、これに伴うレジストの侵入がより効果的に防止される。   The substrate 40 that has passed through the peeling zone 10 enters the substitution zone 20, and the peeling liquid remaining on the surface of the substrate 10 is replaced with the substitution liquid, and then enters the water washing zone 30, thereby preventing the problem of strong alkalinization. Is done. Even at the outlet of the replacement zone 20, the residual liquid removal device 22 drains the liquid with a two-stage air knife sandwiching the new liquid supply, so that the old liquid enters the washing zone 30 and the resist enters accordingly. Is more effectively prevented.

かくして、本実施形態では、水洗ゾーン30へのレジストの侵入が防止される。このため、水洗ゾーン30でのレジストの再付着が防止される。また、基板40の表面から剥離液を完全排除しないので、その表面の乾燥が防止される。更に、下流側への薬液の持ち出し量も少なく、新液供給手段12b,22bでの新液使用量も僅かに抑制される。   Thus, in this embodiment, entry of the resist into the water washing zone 30 is prevented. For this reason, reattachment of the resist in the water washing zone 30 is prevented. Further, since the stripping solution is not completely removed from the surface of the substrate 40, drying of the surface is prevented. Furthermore, the amount of the chemical solution taken to the downstream side is small, and the amount of new solution used in the new solution supply means 12b and 22b is slightly suppressed.

第1の液切り手段12a,22a及び第2の液切り手段12c,22cによる残液除去の後に基板表面上に残す薬液量としては、基板上の液膜厚さで0.05〜0.2mmが好ましい。これが少なすぎると基板40の表面が乾燥するおそれがある。反対に多すぎる場合は薬液の持ち出し量や新液供給手段12b,22bでの薬液使用量が多くなり、薬液コストの増大を招く。これらが満足されるように、第1の液切り手段12a,22a及び第2の液切り手段12c,22cが設計される。   The amount of the chemical solution left on the substrate surface after the residual liquid removal by the first liquid draining means 12a, 22a and the second liquid draining means 12c, 22c is 0.05 to 0.2 mm as the liquid film thickness on the substrate. Is preferred. If the amount is too small, the surface of the substrate 40 may be dried. On the other hand, when the amount is too large, the amount of the chemical solution to be taken out and the amount of the chemical solution to be used in the new liquid supply means 12b and 22b increase, resulting in an increase in the chemical cost. The first liquid draining means 12a and 22a and the second liquid draining means 12c and 22c are designed so that these are satisfied.

また、新液供給手段12b,22bでの薬液供給量としては、基板幅100mm当たり1.5〜3L/minが好ましい。これが少なすぎると新液への置換効果が不十分となる。反対に多すぎる場合は薬液コストの増大を招く。   Moreover, as a chemical | medical solution supply amount in the new liquid supply means 12b and 22b, 1.5-3 L / min per 100 mm of substrate widths is preferable. If the amount is too small, the replacement effect with the new solution is insufficient. On the other hand, when the amount is too large, the cost of the chemical solution is increased.

上記実施形態はレジスト剥離設備への適用例であるが、これ以外にも現像装置へ適用可能である。   The above embodiment is an example of application to a resist stripping facility, but can be applied to a developing device other than this.

また、残液除去装置は、レジスト剥離設備では剥離ゾーン10及び置換ゾーン20の各出口部に設けたが、剥離ゾーン10の出口部にのみ設けてもよい。要は、特定の処理液を使用する処理ゾーンの出口部(処理液が変るところ)での最後の液切りに使用するのが有効であり、これにより、上流側で使用する特定の処理液が、下流側の異なる処理液を使用する処理ゾーンへ持ち出される事態、及びこれに伴うレジスト等の異物流出を回避することができる。新液供給手段の構成としては、フラットノズルの組合せの他、スリットノズルの使用が可能である。   Moreover, although the residual liquid removal apparatus was provided in each exit part of the peeling zone 10 and the substitution zone 20 in the resist peeling equipment, you may provide only in the exit part of the peeling zone 10. FIG. In short, it is effective to use it at the end of the processing zone where a specific processing liquid is used (where the processing liquid changes), so that the specific processing liquid used on the upstream side Further, it is possible to avoid a situation in which the processing liquid is taken out to a processing zone that uses a different processing liquid on the downstream side, and a foreign matter outflow such as a resist accompanying this. As a configuration of the new liquid supply means, a slit nozzle can be used in addition to a combination of flat nozzles.

本発明の一実施形態を示す基板処理設備の構造説明図である。It is structure explanatory drawing of the substrate processing equipment which shows one Embodiment of this invention. 同実施形態における残液除去装置の機能説明図である。It is function explanatory drawing of the residual liquid removal apparatus in the embodiment.

符号の説明Explanation of symbols

10 剥離ゾーン
11 シャワーユニット
12 残液除去手段
12a 第1の液切り手段
12b 新液供給手段
12c 第2の液切り手段
20 置換ゾーン
21 シャワーユニット
22 残液除去手段
22a 第1の液切り手段
22b 新液供給手段
22c 第2の液切り手段
30 水洗ゾーン
31 シャワーユニット
32 乾燥装置
DESCRIPTION OF SYMBOLS 10 Separation zone 11 Shower unit 12 Residual liquid removal means 12a First liquid draining means 12b New liquid supply means 12c Second liquid draining means 20 Replacement zone 21 Shower unit 22 Residual liquid removal means 22a First liquid draining means 22b New Liquid supply means 22c Second liquid draining means 30 Flushing zone 31 Shower unit 32 Drying device

Claims (2)

搬送される基板の表面に処理液としてレジスト剥離液、置換液又は現像液を供給してそれぞれの処理を行う搬送式基板処理設備に使用されて、その基板の表面に残る処理液を除去する残液除去装置であって、前記基板の表面に残る処理液をエアナイフにより除去する第1の液切り手段と、第1の液切り手段の下流側に配置されて処理液の新液を前記基板の表面にカーテン状に供給してパドル状態に載せる新液供給手段と、新液供給手段の更に下流側に配置されて、前記基板の表面に残る処理液をエアナイフにより除去する第2の液切り手段とを具備することを特徴とする残液除去装置。 It is used in a transport-type substrate processing facility that supplies a resist stripping solution, a replacement solution or a developer as a processing solution to the surface of the substrate to be transported and performs the respective processing, and a residue for removing the processing solution remaining on the surface of the substrate. A liquid removal apparatus, which is disposed on the downstream side of the first liquid draining means for removing a processing liquid remaining on the surface of the substrate with an air knife, and a new liquid of the processing liquid is disposed on the substrate. A new liquid supply means for supplying a curtain on the surface and placing it in a paddle state, and a second liquid cutting means arranged on the further downstream side of the new liquid supply means for removing the processing liquid remaining on the surface of the substrate with an air knife A residual liquid removing apparatus comprising: 特定の処理液を使用する処理ゾーンの出口部に設けられることを特徴とする請求項1に記載の残液除去装置。   The residual liquid removing apparatus according to claim 1, wherein the residual liquid removing apparatus is provided at an outlet of a processing zone in which a specific processing liquid is used.
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