KR20080062920A - Apparatus for cleaning substrate and method for cleaning substrate using fabricating the same - Google Patents

Abstract

A substrate cleaning apparatus and a substrate cleaning method using the same are provided to induce a substrate through high speed conveyance during a photoresist layer removing process and replace stripper with DI water immediately, thereby minimizing contact time when the stripper meets the DI water and preventing erosion of a metal layer by conductivity difference. A stripping chamber(101) sprays stripper for removing a photoresist layer pattern remained on a substrate(100) after etching. A cleaning chamber(103,105) performs DI(De-Ionized) cleaning of the substrate as conveying the substrate at high speed after removing the photoresist layer pattern on the substrate. At least one or more DI knives(121,123) are installed in the cleaning chamber and sprays DI water onto the substrate. A DI rinsing chamber(107) performs ID rinsing of the substrate in a wet conveyor.

Description

Substrate cleaning apparatus and substrate cleaning method using the same {APPARATUS FOR CLEANING SUBSTRATE AND METHOD FOR CLEANING SUBSTRATE USING FABRICATING THE SAME}

1 is a schematic view showing a substrate cleaning apparatus according to the prior art.

Figure 2 is a schematic diagram showing a substrate cleaning apparatus according to an embodiment of the present invention. Figure 3 is a schematic diagram showing a state in which the photoresist is cleaned during the cleaning process using a substrate cleaning apparatus according to an embodiment of the present invention.

4 is a schematic view showing a substrate cleaning apparatus according to another embodiment of the present invention.

Figure 5 is a schematic diagram showing a state in which the photoresist is cleaned during the cleaning process using a substrate cleaning apparatus according to another embodiment of the present invention.

-Code description of main parts of drawing-

100: substrate 101: strip seal

103: 1st cleaning room 105: 2nd cleaning room

107: wet cleaning chamber 121, 123: DI knife

125: high pressure shower 127: air knife

129: DI shower 133: DI water and particles

The present invention relates to a display device manufacturing method, and more particularly, a substrate cleaning device capable of preventing a defect in a manufacturing process of a liquid crystal display device by omitting buffer chemicals and enhancing cleaning power during a photoresist removal process, and the same. It relates to a substrate cleaning method used.

As the circuit integration degree of a display device increases, the necessity of processing the micropattern of the structure by which several types of semiconductor thin films were laminated | stacked is increasing gradually.

Accordingly, a number of etching processes, photoresist removal processes, and the like are required, and in order to reduce process defects generated during manufacturing of display devices, a plurality of substrate cleaning processes are required.

In the display device manufacturing process, the cleaning process removes the photoresist film, which is no longer necessary after the pattern forming process, from the substrate, and then the photoresist film residue on the substrate, the etchant remaining after the wet and dry etching, and the residue generated after the etching. It is one of the very important processes to prevent the occurrence of defects in the subsequent manufacturing process by removing particles, etc. attached to the substrate from the substrate using a predetermined chemical treatment agent.

The substrate cleaning apparatus according to the related art using the predetermined chemical treatment agent and the cleaning method using the same will be described with reference to FIG. 1 as follows.

1 is a schematic view showing a substrate cleaning apparatus according to the prior art.

Referring to FIG. 1, a substrate cleaning apparatus according to the related art includes a strip chamber 31 spraying a stripper for removing a photoresist pattern remaining after etching on a substrate 10, and a substrate on the substrate 10. After removing the photoresist pattern, the substrate is transported at a constant speed, and the IPA cleaning chamber 33 spraying buffer chemicals such as Iso-Propyl Alchol (IPA), and DI cleaning to clean the substrate 10 with DI (De-ionized) water It comprises a chamber 35 and a DI rinse chamber 37 for wet cleaning the substrate 10.

Here, the stripper is composed of 10% MEA, 30% NMP, 60% BDG, the MEA is an amine-based component having a property of generating an OH- group with DI water and the like with a highly reactive chemical.

The buffer chemical may be replaced with IEC, DEV, etc. in addition to Iso-Propyl Alchol (IPA).

In order to remove the photoresist pattern remaining on the substrate 10, the strip process is performed in a strip chamber 31 using a stripper, and then the photoresist pattern and particles remaining during the strip process in the IPS cleaning chamber 33 are processed. In order to remove the buffer buffer, such as IPA is again sprayed on the substrate (10).

At this time, the buffer chemicals leave a part of the stripper on the substrate 10, and when the remaining stripper comes in contact with the DI water sprayed on the substrate 10, the OH-group of the DI water is released by the difference in conductivity. The released OH-group reacts with the metal under the photoresist pattern, causing partial erosion of the metal.

Here, the amount of OH-group generation depends on the contact time of the DI water and the stripper, which is directly related to the movement time of the substrate 10.

The wet cleaning chamber 37 carries the substrate 10 at a constant speed, receives the substrate 10 from the DI cleaning chamber 35, and dries the substrate 10 up and down through an air injector to remove the photoresist film. To complete.

A method of cleaning a substrate using the substrate cleaning device having the above configuration will be described below with reference to FIG. 1.

Referring to FIG. 1, a stripper is sprayed to remove the photoresist pattern remaining after etching on the substrate 10 in a strip type 31.

Subsequently, the substrate 10 is transported at constant speed and brought into the IPA cleaning chamber 33, and then the IPA buffer chemical is supplied onto the substrate 10 on which the stripper is sprayed.

At this time, the IPA buffer chemical supplied to the substrate 10 to be transported at constant speed has a function of holding a stripper on the substrate 10.

Next, the substrate 10 is transferred to the DI cleaning chamber 35 to perform DI cleaning.

Subsequently, after flowing the substrate 10 into the DI rinsing chamber 37, the DI water is rinsed by showering the DI water on a wet conveyor, and the DI which is stagnated on the substrate 10 is provided with an air sprayer at the outlet thereof. Drain water and particles.

Here, a DI knife is provided at the inlet of the DI rinsing chamber 37 so that the front surface DI water is supplied when the DI rinsing chamber 37 enters the substrate 10.

Then, DI water is continuously supplied on the wet conveyor through the upper shower 43 to complete the final DI rinsing.

Subsequently, the substrate 10 on which the photoresist film removing process is completed is carried out to the outside.

As described above, the substrate cleaning apparatus according to the related art and the substrate cleaning method using the same have the following problems.

The substrate cleaning apparatus and the substrate cleaning method using the same according to the prior art spray the stripper on the substrate on which the photoresist pattern remains, and then supply the buffer chemical by constant-speed reaction of the substrate again, wherein the buffer chemical is applied on the substrate. Since the DI water and the stripper that are held and subsequently supplied on the substrate meet, the galvanic reaction causes erosion of the sidewall of the metal material patterned under the photosensitive film pattern.

In addition, since the amine stripper and the DI (de-ionized) is mixed, the cleaning power deterioration phenomenon occurs.

As described above, in order to form the gate and data wiring patterns in the manufacture of the display device, the buffer chemical is used in the photosensitive film removal process due to damage to the metal film. In particular, if the buffer chemical is not used during the removal process of the metal film during the photoresist film removal process, staining phenomenon due to the erosion phenomenon of the metal film appears.

However, the use of such buffer chemicals causes the stripper to come into contact with DI water to partially erode the metal film.

Accordingly, the present invention has been made to solve the above problems of the prior art, the object of the present invention is to omit the buffer chemical (buffer chemical) during the photoresist removal process and to eliminate the defects in the manufacturing process of the liquid crystal display device by enhancing the cleaning power It is to provide a substrate cleaning apparatus that can be prevented and a substrate cleaning method using the same.

A substrate cleaning apparatus according to the present invention for achieving the above object, the strip chamber for spraying a stripper for removing the photoresist pattern remaining after etching on the substrate; A cleaning chamber for removing the photoresist pattern on the substrate and then performing a high speed conveyance of the substrate to DI clean the substrate; At least one DI knife provided in the cleaning chamber and spraying DI water onto the substrate; And a DI rinsing chamber for DI rinsing the substrate on a wet conveyor.

The substrate cleaning method using the substrate cleaning apparatus according to the present invention for achieving the above object comprises the steps of: spraying a stripper to remove the photoresist pattern remaining after etching on the substrate; Transporting the substrate at high speed and bringing it into the DI cleaning chamber and replacing the stripper with DI water for cleaning; Performing a DI high pressure shower by transporting the substrate at high speed; And wet-cleaning the substrate.

Hereinafter, a substrate cleaning apparatus according to the present invention and a substrate cleaning method using the same will be described in detail with reference to the accompanying drawings.

2 is a schematic view showing a substrate cleaning apparatus according to an embodiment of the present invention. 3 is a schematic diagram illustrating a state in which a photoresist is cleaned during a cleaning process using a substrate cleaning apparatus according to an embodiment of the present invention.

Referring to FIG. 2, the substrate cleaning apparatus according to the present invention includes a strip chamber 101 spraying a stripper to remove the photoresist pattern remaining after etching on the substrate 100, and a photoresist pattern removed from the substrate 100. Thereafter, the substrate 100 is conveyed at a high speed, and the cleaning chambers 103 and 105 for DI cleaning the substrate 100 and a drying chamber 107 for drying the substrate 100 are included.

In this case, the cleaning chamber includes a first chamber 103 for spraying DI water (De-Ionized Water) by replacing a stripper on the substrate 100 transferred from the strip chamber 101 at a high speed, and the first chamber 103. And a second chamber 105 that turns the substrate 100 from which it is to be subjected to DI cleaning.

As described above, when the substrate 100 is conveyed at a high speed, and the stripper is directly replaced with DI water for cleaning, the stripper is omitted on the substrate 100 because the buffer chemical is omitted on the substrate 100. Since the holding time is short, the contact time with the DI water can be minimized, and the metal erosion by the galvanic phenomenon is almost eliminated.

The high speed transfer may be performed from the DI cleaning first chamber 103 or may be performed while the high pressure shower is performed in the second chamber 105.

That is, even if the constant speed conveyance is maintained in the first chamber 103 and a high-speed reaction is maintained only in the second chamber 105, the substrate 100 can be cleaned without damaging the substrate 100 due to the contact with the stripper and the DI water.

This is because DI knives 121 and 123 are installed at the inlet of the DI cleaning first chamber 103 and the inlet of the second chamber 105, respectively. By supplying water and flowing down in one direction as shown in FIG. 3, it is possible to minimize the time for the DI water and the stripper to contact on the substrate 100.

As described above, for convenience of control of the photoresist film removing apparatus, the photoresist film removing process may be performed by maintaining the high-speed conveyance without changing the speed at constant speed-high speed for each cleaning chamber.

The DI water is directly supplied by replacing the stripper on the substrate 100 introduced by the high speed conveyance. At this time, the speed of the high speed conveyance is about 7000 mm to 8000 mm / min, and the stripper remaining on the substrate 100 to be conveyed at high speed flows down to the bottom together with the DI water sprayed by the DI knife 121 and directly with the DI water. No contact.

A DI knife 121 is provided in the first chamber 103 to supply DI water, and a DI high pressure shower 125 is provided at an inlet of the second chamber 105 to provide a substrate ( DI water supply is previously made on the DI high-pressure shower-before substrate 100 of 100).

In the DI rinsing chamber 107, the substrate 100 is conveyed at a high speed, the substrate 100 is introduced from the cleaning chambers 103 and 105 where the DI cleaning is performed, and the upper and lower portions of the substrate 100 are air knifed. Drying the substrate surface through 127, DI water is continuously supplied through the shower 129 on the wet conveyor and rinsed to complete the photoresist removal process.

Here, an air injector (not shown) is formed at the outlet of the DI rinsing chamber 107 to supply particles to the substrate 100 and to confine particles due to DI water remaining during cleaning and rinsing (FIG. 3). 133) to flow to the outside.

The substrate cleaning method using the substrate cleaning apparatus according to the embodiment of the present invention having the above configuration will be described with reference to FIGS. 2 and 3 as follows.

First, a stripper is sprayed to remove the photoresist pattern remaining after etching on the substrate 100 in the strip chamber 101.

Subsequently, the substrate 100 is conveyed at high speed and brought into the DI cleaning first chamber 103, and then the stripper is quickly replaced with DI water for cleaning.

Then, the substrate 100 is continuously conveyed at a high speed to the DI cleaning second chamber 105 to perform DI high pressure shower.

Subsequently, the substrate 100 is continuously conveyed at a high speed to the DI cleaner 2 chamber 105 to perform DI high pressure shower.

Then, the substrate 100 is introduced into the DI rinsing chamber 107 and then dried to complete the removal and cleaning of the photoresist film.

In this case, the DI showerhead 129 is provided together to wash away the remaining parts, and to dry the surface of the substrate 100 through the air knife 127.

Subsequently, after flowing the substrate 100 into the DI rinsing chamber 107, the DI water is showered and rinsed on a wet conveyor, and an air sprayer 131 is provided at the outlet to stagnate on the substrate 100. Drains DI water and particles (not shown).

Next, the substrate 100 having completed the above processes is carried out to the outside.

Meanwhile, as described above, in one embodiment of the present invention, DI water is supplied onto the substrate 100 while the DI knife 121 is positioned above the substrate 100. In this case, the substrate 100 is supplied. The upper cleaning power effect may be lowered.

This is because the substrate 100 itself is conveyed in a state inclined by a predetermined angle on the conveyor, the height difference between the upper portion of the substrate 100 and the DI knife 121 than the lower portion.

Therefore, the speed of DI water supplied to the substrate 100 through the DI knife 121 is lower than the speed of DI water falling to the center and the lower side of the substrate 100, so that the photoresist pattern or particle removal rate is lowered. Symptoms may occur.

In another embodiment of the present invention, the upper edge edge of the substrate 100 may be additionally provided together with the first DI knife 221 provided on the substrate 100 as shown in FIGS. 4 and 5. The second DI knife 223 is installed on the side.

As mentioned above, FIGS. 4 and 5 illustrate a substrate cleaning apparatus and a substrate cleaning method using the same according to another embodiment of the present invention having the first DI knife 221 and the second DI knife 223. If described with reference to:

Figure 4 is a schematic diagram showing a substrate cleaning apparatus according to another embodiment of the present invention.

5 is a schematic diagram illustrating a state in which a photoresist is cleaned during a cleaning process using the substrate cleaning apparatus according to another embodiment of the present invention.

Referring to FIG. 4, a substrate cleaning apparatus according to another embodiment of the present invention includes a strip chamber 201 spraying a stripper for removing a photoresist pattern remaining after etching on a substrate 200, and on the substrate 200. After removing the photoresist pattern, the substrate 200 is conveyed at a high speed, and the cleaning chambers 203 and 205 for DI cleaning the substrate 200 and a drying chamber 207 for drying the substrate 200 are included.

Here, the cleaning chamber includes a first chamber 203 for spraying DI water (De-Ionized Water) by replacing a stripper on the substrate 200 transferred from the strip chamber 201 at high speed, and the first chamber 203. And a second chamber 205 for turning on the substrate 200 from which DI cleaning is performed.

As described above, when the substrate 200 is conveyed at a high speed, and the stripper is directly replaced with DI water, cleaning is performed, the stripper is omitted on the substrate 200 because the buffer chemical is omitted on the substrate 200. Since the holding time is short, the contact time with the DI water can be minimized, and the metal erosion by the galvanic phenomenon is almost eliminated.

The high speed transfer may be performed from the first chamber 203 for DI cleaning, or may be performed while a high pressure shower is performed in the second chamber 205.

That is, even if the constant velocity conveyance is maintained in the first chamber 203 and a high-speed reaction is maintained only in the second chamber 205, the substrate 200 can be cleaned without damaging the substrate 200 due to contact with the stripper and DI water.

The DI knife 221 is installed at the inlet of the DI cleaning first chamber 203, so that DI water is quickly supplied to the substrate 200 even without the high-speed transfer of the substrate 200. As shown in FIG. By flowing down to the DI water and the stripper it is possible to minimize the contact time on the substrate 200.

On the other hand, in another embodiment of the present invention, in order to compensate for the weakening of the cleaning power in one embodiment of the present invention, as shown in Fig. 5, the DI cleaning chamber 203 at the position corresponding to the upper side of the substrate 200 to be conveyed, Along with the first DI knife 221 provided, the second DI knife 223 is installed at a position corresponding to the upper edge portion of the substrate 200.

As described above, for convenience of control of the photoresist film removing apparatus, the photoresist film removing process may be performed by maintaining the high-speed conveyance without changing the speed at constant speed-high speed for each cleaning chamber.

The DI water is directly supplied by replacing the stripper on the substrate 200 introduced by the high speed conveyance. At this time, the speed of the high speed conveyance is about 7000 mm to 8000 mm / min, and the stripper remaining on the substrate 200 to be conveyed at high speed is lowered together with the DI water sprayed by the first and second DI knives 221 and 223. It will flow down and will not come in direct contact with DI water.

The first chamber 203 is provided with first and second DI knives 221 and 223 to supply DI water, and a DI high pressure shower unit 225 is provided at an inlet of the second chamber 205. ), DI water supply is made in advance on the DI high-pressure shower substrate 200 of the substrate 200.

In the DI rinsing chamber 207, the substrate 200 is conveyed at a high speed, and the substrate 200 is introduced from the cleaning chambers 203 and 205 where the DI cleaning is performed. 2 DI water is sprayed through the DI knives (221, 223), the shower 229 is continuously supplied to the DI water on the wet conveyor, and rinsed to complete the photoresist film removing process.

Here, an air injector 227 is provided at an outlet of the wet cleaning chamber 207 to supply air to the substrate 200 to flow particles stagnant due to DI water remaining during cleaning and rinsing. Let it fall.

The substrate cleaning method using the substrate cleaning apparatus according to another embodiment of the present invention having the above configuration will be described below with reference to FIGS. 4 and 5.

First, a stripper is sprayed to remove the photoresist pattern remaining after etching on the substrate 200 in the strip chamber 201.

Subsequently, the substrate 200 is conveyed at high speed and brought into the DI cleaning first chamber 203, and then the stripper is quickly replaced with DI water for cleaning.

Then, the substrate 200 is continuously conveyed at a high speed to the DI cleaning second chamber 205 to perform DI high pressure shower.

Subsequently, the substrate 200 is continuously conveyed at a high speed to the DI cleaner 2 chamber 205 to perform DI high pressure shower.

Then, the substrate 200 is introduced into the DI rinsing chamber 207 and then dried to complete the removal and cleaning of the photoresist film.

In this case, the DI shower unit 229 is provided together to wash away the remaining particles, and to dry the surface of the substrate 200 through the air knife 227.

Subsequently, after flowing the substrate 200 into the DI rinsing chamber 207, the DI water is showered and rinsed on a wet conveyor, and the DI is stagnated on the substrate 200 with an air sprayer at the outlet thereof. Let water and particles flow down.

Then, the substrate 200 having the above processes is carried out to the outside.

On the other hand, while described above with reference to a preferred embodiment of the present invention, those skilled in the art various modifications of the present invention without departing from the spirit and scope of the invention described in the claims below And can be changed.

As described above, the substrate washing apparatus and the substrate cleaning method using the same according to the present invention have the following effects.

In the substrate cleaning apparatus and substrate cleaning method using the same, the substrate is introduced at high speed during the photoresist removal process, and the stripper is replaced with DI water to minimize the contact time between the stripper and DI water, thereby reducing the conductivity. Erosion of the metal film can be prevented.

In addition, the substrate cleaning apparatus and the substrate cleaning method using the same according to the present invention can reduce the burden on the use of chemicals by reducing the use of the buffer chemical due to the mechanical deformation of the photoresist removing device. In particular, the manufacturing cost of the TFT-LCD can be reduced by eliminating the buffer-chemical used in the photoresist removing process, for example, IPA, IEC, DEV, and the like.

On the other hand, the substrate cleaning apparatus and substrate cleaning method using the same according to the present invention, it is possible to reduce the occurrence of stripper redepositable foreign matter by minimizing metal erosion and reinforcing the cleaning power by the rapid DI replacement of the stripper.

In addition, the substrate cleaning apparatus and the substrate cleaning method using the same according to the present invention, by placing the DI knife due to the increased cleaning power on the upper side and the edge side of the upper surface of the substrate to be transferred to the cleaning chamber, metal damage and photoresist through rapid DI replacement It can reduce the redeposition of foreign matter.

In addition, the substrate washing apparatus and the substrate cleaning method using the same according to the present invention have the effect of reducing the process cost by not using a buffer-chemical.

Furthermore, by applying the photoresist removal method using the photoresist removal apparatus of the present invention when manufacturing a liquid crystal display device requiring multiple metal film patterning processes, the use of a plurality of buffer chemicals in one panel is omitted, thereby reducing the manufacturing cost of the panel. Can be.

Claims (12)

A strip chamber spraying a stripper to remove the photoresist pattern remaining after etching on the substrate; A cleaning chamber for removing the photoresist pattern on the substrate and then performing a high speed conveyance of the substrate to DI clean the substrate; At least one DI knife provided in the cleaning chamber and spraying DI water onto the substrate; And And a DI rinsing chamber for DI rinsing the substrate on a wet conveyor. The method of claim 1, wherein the cleaning chamber A first chamber injecting DI water in which a stripper is substituted to a substrate conveyed from the strip chamber; And a second chamber for turning on the substrate from the first chamber and performing DI cleaning. The substrate cleaning apparatus according to claim 2, wherein two DI knives are provided at the entrance of the first chamber. 4. The method of claim 3, wherein one of the two DI knives is installed in a first chamber corresponding to the substrate upper surface of the first chamber entrance, and the other is installed in a first chamber corresponding to the edge of the substrate upper surface. The substrate cleaning apparatus characterized by the above-mentioned. The substrate cleaning apparatus according to claim 2, wherein the second chamber is provided with a DI high pressure shower. The substrate cleaning apparatus according to claim 1, wherein the substrate is conveyed at a high speed from the inflow of the substrate from the strip chamber to the first chamber. The substrate cleaning apparatus according to claim 1, wherein the substrate is conveyed at a high speed from the inflow of the substrate from the strip chamber to the second chamber. Spraying a stripper to remove the photoresist pattern remaining after etching on the substrate; Transporting the substrate at high speed and bringing it into the DI cleaning chamber and replacing the stripper with DI water for cleaning; Performing a DI high pressure shower by transporting the substrate at high speed; Wet cleaning the substrate comprising a step of cleaning the substrate. The substrate cleaning method according to claim 7, wherein a DI knife is provided at the inlet of the DI cleaning chamber to replace the stripper and immediately supply DI water. The substrate cleaning method according to claim 8, wherein two DI knives are provided at the entrance of the first chamber. 10. The apparatus of claim 9, wherein one of the two DI knives is installed in a first chamber corresponding to the substrate upper surface of the first chamber entrance, and the other is installed in a first chamber corresponding to the edge of the substrate upper surface. The substrate cleaning method characterized by the above-mentioned. The substrate cleaning method according to claim 7, wherein the DI high pressure shower in the DI cleaning chamber is made by a DI high pressure shower.

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