TWI228207B - Method of forming a rim phase shifting mask and using the rim phase shifting mask to form a semiconductor device - Google Patents
Method of forming a rim phase shifting mask and using the rim phase shifting mask to form a semiconductor device Download PDFInfo
- Publication number
- TWI228207B TWI228207B TW092115104A TW92115104A TWI228207B TW I228207 B TWI228207 B TW I228207B TW 092115104 A TW092115104 A TW 092115104A TW 92115104 A TW92115104 A TW 92115104A TW I228207 B TWI228207 B TW I228207B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- mask
- opening
- transparent substrate
- phase shift
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims description 55
- 230000010363 phase shift Effects 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 238000000059 patterning Methods 0.000 claims abstract description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims description 73
- 239000000463 material Substances 0.000 claims description 14
- 230000000873 masking effect Effects 0.000 claims description 9
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 3
- 239000005011 phenolic resin Substances 0.000 claims description 3
- 229920001568 phenolic resin Polymers 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 254
- 230000008569 process Effects 0.000 description 29
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 18
- 229910052804 chromium Inorganic materials 0.000 description 13
- 239000011651 chromium Substances 0.000 description 13
- 238000005530 etching Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 11
- 238000001459 lithography Methods 0.000 description 11
- 239000013043 chemical agent Substances 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000010453 quartz Substances 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 6
- 229910052801 chlorine Inorganic materials 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/213,344 US6797440B2 (en) | 2002-08-06 | 2002-08-06 | Method of forming a rim phase shifting mask and using the rim phase shifting mask to form a semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200405134A TW200405134A (en) | 2004-04-01 |
| TWI228207B true TWI228207B (en) | 2005-02-21 |
Family
ID=31494444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092115104A TWI228207B (en) | 2002-08-06 | 2003-06-03 | Method of forming a rim phase shifting mask and using the rim phase shifting mask to form a semiconductor device |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6797440B2 (https=) |
| EP (1) | EP1529246A1 (https=) |
| JP (1) | JP2005534978A (https=) |
| CN (1) | CN1717624A (https=) |
| AU (1) | AU2003232155A1 (https=) |
| TW (1) | TWI228207B (https=) |
| WO (1) | WO2004013694A1 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6913868B2 (en) * | 2003-01-21 | 2005-07-05 | Applied Materials, Inc. | Conductive bi-layer e-beam resist with amorphous carbon |
| KR100571411B1 (ko) * | 2003-12-27 | 2006-04-14 | 동부아남반도체 주식회사 | 반도체 소자의 마스크 및 그 패턴 형성 방법 |
| KR100652388B1 (ko) * | 2004-11-30 | 2006-12-01 | 삼성전자주식회사 | 다-위상 위상 변조부를 구비하는 포커스 모니터링 마스크및 그 제조 방법 |
| US20070012335A1 (en) * | 2005-07-18 | 2007-01-18 | Chang Hsiao C | Photomask cleaning using vacuum ultraviolet (VUV) light cleaning |
| US7381618B2 (en) * | 2006-10-03 | 2008-06-03 | Power Integrations, Inc. | Gate etch process for a high-voltage FET |
| US20080146001A1 (en) * | 2006-12-15 | 2008-06-19 | Texas Instruments Inc. | Pre-STI nitride descum step for increased margin against STI seam voids |
| JP2009025553A (ja) * | 2007-07-19 | 2009-02-05 | Canon Inc | 位相シフトマスク |
| KR100950481B1 (ko) * | 2008-06-26 | 2010-03-31 | 주식회사 하이닉스반도체 | 포토마스크를 이용한 홀 타입 패턴 형성방법 |
| CN102279517A (zh) * | 2010-06-14 | 2011-12-14 | 清华大学 | 纳米压印方法 |
| US20120098124A1 (en) * | 2010-10-21 | 2012-04-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device having under-bump metallization (ubm) structure and method of forming the same |
| JP2012099178A (ja) * | 2010-11-02 | 2012-05-24 | Hoya Corp | ビットパターンドメディア製造用のインプリントモールド及びその製造方法 |
| KR101582175B1 (ko) * | 2015-03-17 | 2016-01-05 | 에이피시스템 주식회사 | 레이저 패터닝을 이용한 섀도우 마스크의 제조 장치 및 레이저 패터닝을 이용한 섀도우 마스크의 제조 방법 |
| US9659821B1 (en) * | 2016-05-23 | 2017-05-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming interconnect structures by self-aligned approach |
| US11131919B2 (en) * | 2018-06-22 | 2021-09-28 | International Business Machines Corporation | Extreme ultraviolet (EUV) mask stack processing |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6007324A (en) | 1977-10-23 | 1999-12-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Double layer method for fabricating a rim type attenuating phase shifting mask |
| US5126006A (en) | 1990-10-30 | 1992-06-30 | International Business Machines Corp. | Plural level chip masking |
| EP0567419A2 (en) * | 1992-04-23 | 1993-10-27 | International Business Machines Corporation | A shifter-based rim phase shifting structure and process to fabricate the same |
| US5302477A (en) | 1992-08-21 | 1994-04-12 | Intel Corporation | Inverted phase-shifted reticle |
| US5403682A (en) | 1992-10-30 | 1995-04-04 | International Business Machines Corporation | Alternating rim phase-shifting mask |
| JP2500050B2 (ja) | 1992-11-13 | 1996-05-29 | インターナショナル・ビジネス・マシーンズ・コーポレイション | リム型の位相シフト・マスクの形成方法 |
| US5495959A (en) | 1994-05-11 | 1996-03-05 | Micron Technology, Inc. | Method of making substractive rim phase shifting masks |
| US6224724B1 (en) | 1995-02-23 | 2001-05-01 | Tokyo Electron Limited | Physical vapor processing of a surface with non-uniformity compensation |
| US5536606A (en) | 1995-05-30 | 1996-07-16 | Micron Technology, Inc. | Method for making self-aligned rim phase shifting masks for sub-micron lithography |
| US5955222A (en) * | 1996-12-03 | 1999-09-21 | International Business Machines Corporation | Method of making a rim-type phase-shift mask and mask manufactured thereby |
| TW352421B (en) * | 1998-04-27 | 1999-02-11 | United Microelectronics Corp | Method and process of phase shifting mask |
| KR100295049B1 (ko) * | 1998-07-23 | 2001-11-30 | 윤종용 | 위상반전마스크제조방법 |
| US6582856B1 (en) * | 2000-02-28 | 2003-06-24 | Chartered Semiconductor Manufacturing Ltd. | Simplified method of fabricating a rim phase shift mask |
| US6387787B1 (en) | 2001-03-02 | 2002-05-14 | Motorola, Inc. | Lithographic template and method of formation and use |
-
2002
- 2002-08-06 US US10/213,344 patent/US6797440B2/en not_active Expired - Lifetime
-
2003
- 2003-05-15 WO PCT/US2003/015590 patent/WO2004013694A1/en not_active Ceased
- 2003-05-15 EP EP03766809A patent/EP1529246A1/en not_active Withdrawn
- 2003-05-15 AU AU2003232155A patent/AU2003232155A1/en not_active Abandoned
- 2003-05-15 CN CNA038189585A patent/CN1717624A/zh active Pending
- 2003-05-15 JP JP2004525977A patent/JP2005534978A/ja active Pending
- 2003-06-03 TW TW092115104A patent/TWI228207B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US6797440B2 (en) | 2004-09-28 |
| WO2004013694A1 (en) | 2004-02-12 |
| EP1529246A1 (en) | 2005-05-11 |
| US20040029021A1 (en) | 2004-02-12 |
| CN1717624A (zh) | 2006-01-04 |
| AU2003232155A1 (en) | 2004-02-23 |
| JP2005534978A (ja) | 2005-11-17 |
| TW200405134A (en) | 2004-04-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |