CN1717624A - 形成凸缘相移掩模及利用凸缘相移掩模来形成半导体器件的方法 - Google Patents

形成凸缘相移掩模及利用凸缘相移掩模来形成半导体器件的方法 Download PDF

Info

Publication number
CN1717624A
CN1717624A CNA038189585A CN03818958A CN1717624A CN 1717624 A CN1717624 A CN 1717624A CN A038189585 A CNA038189585 A CN A038189585A CN 03818958 A CN03818958 A CN 03818958A CN 1717624 A CN1717624 A CN 1717624A
Authority
CN
China
Prior art keywords
layer
mask
opening
transparency carrier
opaque
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA038189585A
Other languages
English (en)
Chinese (zh)
Inventor
西泽·M·加尔扎
伟·E·吴
伯纳德·J·罗曼
潘威特·J·S·曼加塔
凯文·J·诺德奎斯特
威廉·J·达乌克谢尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of CN1717624A publication Critical patent/CN1717624A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/29—Rim PSM or outrigger PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CNA038189585A 2002-08-06 2003-05-15 形成凸缘相移掩模及利用凸缘相移掩模来形成半导体器件的方法 Pending CN1717624A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/213,344 US6797440B2 (en) 2002-08-06 2002-08-06 Method of forming a rim phase shifting mask and using the rim phase shifting mask to form a semiconductor device
US10/213,344 2002-08-06

Publications (1)

Publication Number Publication Date
CN1717624A true CN1717624A (zh) 2006-01-04

Family

ID=31494444

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA038189585A Pending CN1717624A (zh) 2002-08-06 2003-05-15 形成凸缘相移掩模及利用凸缘相移掩模来形成半导体器件的方法

Country Status (7)

Country Link
US (1) US6797440B2 (https=)
EP (1) EP1529246A1 (https=)
JP (1) JP2005534978A (https=)
CN (1) CN1717624A (https=)
AU (1) AU2003232155A1 (https=)
TW (1) TWI228207B (https=)
WO (1) WO2004013694A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102279517A (zh) * 2010-06-14 2011-12-14 清华大学 纳米压印方法
CN107424954A (zh) * 2016-05-23 2017-12-01 台湾积体电路制造股份有限公司 半导体结构的制造方法
CN107427964A (zh) * 2015-03-17 2017-12-01 Ap系统股份有限公司 使用激光图案化制造阴影掩膜的装置和使用激光图案化制造阴影掩膜的方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6913868B2 (en) * 2003-01-21 2005-07-05 Applied Materials, Inc. Conductive bi-layer e-beam resist with amorphous carbon
KR100571411B1 (ko) * 2003-12-27 2006-04-14 동부아남반도체 주식회사 반도체 소자의 마스크 및 그 패턴 형성 방법
KR100652388B1 (ko) * 2004-11-30 2006-12-01 삼성전자주식회사 다-위상 위상 변조부를 구비하는 포커스 모니터링 마스크및 그 제조 방법
US20070012335A1 (en) * 2005-07-18 2007-01-18 Chang Hsiao C Photomask cleaning using vacuum ultraviolet (VUV) light cleaning
US7381618B2 (en) * 2006-10-03 2008-06-03 Power Integrations, Inc. Gate etch process for a high-voltage FET
US20080146001A1 (en) * 2006-12-15 2008-06-19 Texas Instruments Inc. Pre-STI nitride descum step for increased margin against STI seam voids
JP2009025553A (ja) * 2007-07-19 2009-02-05 Canon Inc 位相シフトマスク
KR100950481B1 (ko) * 2008-06-26 2010-03-31 주식회사 하이닉스반도체 포토마스크를 이용한 홀 타입 패턴 형성방법
US20120098124A1 (en) * 2010-10-21 2012-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having under-bump metallization (ubm) structure and method of forming the same
JP2012099178A (ja) * 2010-11-02 2012-05-24 Hoya Corp ビットパターンドメディア製造用のインプリントモールド及びその製造方法
US11131919B2 (en) * 2018-06-22 2021-09-28 International Business Machines Corporation Extreme ultraviolet (EUV) mask stack processing

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6007324A (en) 1977-10-23 1999-12-28 Taiwan Semiconductor Manufacturing Company, Ltd. Double layer method for fabricating a rim type attenuating phase shifting mask
US5126006A (en) 1990-10-30 1992-06-30 International Business Machines Corp. Plural level chip masking
EP0567419A2 (en) * 1992-04-23 1993-10-27 International Business Machines Corporation A shifter-based rim phase shifting structure and process to fabricate the same
US5302477A (en) 1992-08-21 1994-04-12 Intel Corporation Inverted phase-shifted reticle
US5403682A (en) 1992-10-30 1995-04-04 International Business Machines Corporation Alternating rim phase-shifting mask
JP2500050B2 (ja) 1992-11-13 1996-05-29 インターナショナル・ビジネス・マシーンズ・コーポレイション リム型の位相シフト・マスクの形成方法
US5495959A (en) 1994-05-11 1996-03-05 Micron Technology, Inc. Method of making substractive rim phase shifting masks
US6224724B1 (en) 1995-02-23 2001-05-01 Tokyo Electron Limited Physical vapor processing of a surface with non-uniformity compensation
US5536606A (en) 1995-05-30 1996-07-16 Micron Technology, Inc. Method for making self-aligned rim phase shifting masks for sub-micron lithography
US5955222A (en) * 1996-12-03 1999-09-21 International Business Machines Corporation Method of making a rim-type phase-shift mask and mask manufactured thereby
TW352421B (en) * 1998-04-27 1999-02-11 United Microelectronics Corp Method and process of phase shifting mask
KR100295049B1 (ko) * 1998-07-23 2001-11-30 윤종용 위상반전마스크제조방법
US6582856B1 (en) * 2000-02-28 2003-06-24 Chartered Semiconductor Manufacturing Ltd. Simplified method of fabricating a rim phase shift mask
US6387787B1 (en) 2001-03-02 2002-05-14 Motorola, Inc. Lithographic template and method of formation and use

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102279517A (zh) * 2010-06-14 2011-12-14 清华大学 纳米压印方法
CN107427964A (zh) * 2015-03-17 2017-12-01 Ap系统股份有限公司 使用激光图案化制造阴影掩膜的装置和使用激光图案化制造阴影掩膜的方法
CN107427964B (zh) * 2015-03-17 2019-06-25 Ap系统股份有限公司 使用激光图案化制造阴影掩膜的装置和使用激光图案化制造阴影掩膜的方法
CN107424954A (zh) * 2016-05-23 2017-12-01 台湾积体电路制造股份有限公司 半导体结构的制造方法

Also Published As

Publication number Publication date
US6797440B2 (en) 2004-09-28
WO2004013694A1 (en) 2004-02-12
EP1529246A1 (en) 2005-05-11
US20040029021A1 (en) 2004-02-12
TWI228207B (en) 2005-02-21
AU2003232155A1 (en) 2004-02-23
JP2005534978A (ja) 2005-11-17
TW200405134A (en) 2004-04-01

Similar Documents

Publication Publication Date Title
CN101436540B (zh) 使蚀刻底切最小化及提供清洁金属剥离的方法
CN100549817C (zh) 用于相移式掩膜的原位平衡
CN1717624A (zh) 形成凸缘相移掩模及利用凸缘相移掩模来形成半导体器件的方法
JP2016167052A (ja) フォトマスクブランク、フォトマスクの製造方法及びマスクパターン形成方法
JPH0798493A (ja) 位相シフトマスク及びその製造方法
US6887627B2 (en) Method of fabricating phase shift mask
CN1688934B (zh) 半导体器件的制造方法
US20080057414A1 (en) Hybrid photomask and method of fabricating the same
US7384714B2 (en) Anti-reflective sidewall coated alternating phase shift mask and fabrication method
US8592105B2 (en) Photomasks and methods of fabricating the same
US8399158B2 (en) High resolution phase shift mask
US20090202925A1 (en) Photomask defect correction method, photomask manufacturing method, phase shift mask manufacturing method, photomask, phase shift mask, photomask set, and pattern transfer method
US6582856B1 (en) Simplified method of fabricating a rim phase shift mask
US10663854B2 (en) Method of fabricating a photomask
US7648806B2 (en) Phase shift mask with two-phase clear feature
US7033947B2 (en) Dual trench alternating phase shift mask fabrication
US20090053620A1 (en) Blank Mask and Method for Fabricating Photomask Using the Same
CN101989039A (zh) 光掩膜的制作方法
WO2016140044A1 (ja) フォトマスクブランク、フォトマスクの製造方法及びマスクパターン形成方法
WO2007116362A1 (en) Method of manufacturing a semiconductor device
US7316872B2 (en) Etching bias reduction
JPH08297357A (ja) エッジ強調型位相シフトマスクの製造方法
US7462566B2 (en) Method for manufacturing semiconductor device
US8475976B2 (en) Method of fabricating integrated circuit using alternating phase-shift mask and phase-shift trim mask
US6348288B1 (en) Resolution enhancement method for deep quarter micron technology

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Open date: 20060104