TWI221029B - Solid state image device and manufacturing method thereof - Google Patents
Solid state image device and manufacturing method thereof Download PDFInfo
- Publication number
- TWI221029B TWI221029B TW092104618A TW92104618A TWI221029B TW I221029 B TWI221029 B TW I221029B TW 092104618 A TW092104618 A TW 092104618A TW 92104618 A TW92104618 A TW 92104618A TW I221029 B TWI221029 B TW I221029B
- Authority
- TW
- Taiwan
- Prior art keywords
- insulating film
- transfer electrodes
- channel
- regions
- film
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000007787 solid Substances 0.000 title abstract 2
- 238000002955 isolation Methods 0.000 claims abstract description 42
- 238000003384 imaging method Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 21
- 230000001681 protective effect Effects 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 13
- 238000010030 laminating Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 abstract description 24
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 230000003287 optical effect Effects 0.000 abstract description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 5
- 239000011810 insulating material Substances 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 239000011241 protective layer Substances 0.000 abstract 2
- 230000005540 biological transmission Effects 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000005571 horizontal transmission Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000005570 vertical transmission Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002063611A JP2003264284A (ja) | 2002-03-08 | 2002-03-08 | 固体撮像素子及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200304215A TW200304215A (en) | 2003-09-16 |
| TWI221029B true TWI221029B (en) | 2004-09-11 |
Family
ID=27784930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092104618A TWI221029B (en) | 2002-03-08 | 2003-03-05 | Solid state image device and manufacturing method thereof |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6936873B2 (enExample) |
| JP (1) | JP2003264284A (enExample) |
| KR (1) | KR100500064B1 (enExample) |
| CN (1) | CN100342542C (enExample) |
| TW (1) | TWI221029B (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004319784A (ja) * | 2003-04-16 | 2004-11-11 | Sanyo Electric Co Ltd | 固体撮像素子及びその製造方法 |
| JP2005057137A (ja) * | 2003-08-06 | 2005-03-03 | Sanyo Electric Co Ltd | 固体撮像装置の製造方法 |
| KR100578644B1 (ko) * | 2004-05-06 | 2006-05-11 | 매그나칩 반도체 유한회사 | 프리즘을 구비한 시모스 이미지센서 및 그 제조방법 |
| JP2006344644A (ja) * | 2005-06-07 | 2006-12-21 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびカメラならびに固体撮像装置の製造方法 |
| US20060289777A1 (en) * | 2005-06-29 | 2006-12-28 | Wen Li | Detector with electrically isolated pixels |
| JP5061579B2 (ja) * | 2006-11-02 | 2012-10-31 | 凸版印刷株式会社 | 固体撮像装置及びその製造方法 |
| JP2009076746A (ja) * | 2007-09-21 | 2009-04-09 | Fujifilm Corp | 固体撮像素子、撮像装置、及び固体撮像素子の製造方法 |
| JP2010206009A (ja) * | 2009-03-04 | 2010-09-16 | Toshiba Corp | 撮像装置及びその製造方法、並びに撮像方法 |
| KR101106980B1 (ko) * | 2009-03-19 | 2012-01-20 | 안동준 | 레일 바이크 |
| CN103210494B (zh) * | 2010-11-10 | 2016-01-06 | 夏普株式会社 | 显示装置用基板及其制造方法、显示装置 |
| KR101038445B1 (ko) * | 2011-01-24 | 2011-06-01 | (주) 한국 레드벤쳐 | 레저용 레일 바이크 |
| US10553479B2 (en) * | 2017-02-16 | 2020-02-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device with contact pad and fabrication method therefore |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05134111A (ja) * | 1991-11-15 | 1993-05-28 | Sharp Corp | 固体撮像装置 |
| JPH0637297A (ja) * | 1992-07-16 | 1994-02-10 | Nec Corp | 固体撮像装置およびその駆動方法 |
| JPH06232379A (ja) * | 1993-02-01 | 1994-08-19 | Sharp Corp | 固体撮像素子 |
| JPH06326284A (ja) * | 1993-05-12 | 1994-11-25 | Matsushita Electron Corp | カラー固体撮像装置 |
| JPH0763904A (ja) * | 1993-08-25 | 1995-03-10 | Asahi Glass Co Ltd | 複合球面マイクロレンズアレイ及びその製造方法 |
| JP2950714B2 (ja) * | 1993-09-28 | 1999-09-20 | シャープ株式会社 | 固体撮像装置およびその製造方法 |
| JPH07106538A (ja) * | 1993-09-30 | 1995-04-21 | Olympus Optical Co Ltd | 固体撮像装置の製造方法 |
| JP3566331B2 (ja) * | 1994-03-11 | 2004-09-15 | リコー光学株式会社 | 光学デバイス・光学デバイス製造方法 |
| JPH0927608A (ja) * | 1995-05-11 | 1997-01-28 | Sony Corp | 固体撮像装置とその製造方法 |
| JP3405620B2 (ja) * | 1995-05-22 | 2003-05-12 | 松下電器産業株式会社 | 固体撮像装置 |
| JPH0964325A (ja) * | 1995-08-23 | 1997-03-07 | Sony Corp | 固体撮像素子とその製造方法 |
| JPH10270672A (ja) * | 1997-03-25 | 1998-10-09 | Sony Corp | 固体撮像素子 |
| JP3447510B2 (ja) * | 1997-04-09 | 2003-09-16 | Ｎｅｃエレクトロニクス株式会社 | 固体撮像素子、その製造方法及び固体撮像装置 |
| JP2000091548A (ja) * | 1998-09-08 | 2000-03-31 | Sanyo Electric Co Ltd | 固体撮像素子及びその製造方法 |
| JP2000124435A (ja) * | 1998-10-19 | 2000-04-28 | Sanyo Electric Co Ltd | 固体撮像素子及びその製造方法 |
| JP2000196060A (ja) * | 1998-12-24 | 2000-07-14 | Nec Corp | 固体撮像装置およびその製造方法 |
| JP2000206310A (ja) * | 1999-01-19 | 2000-07-28 | Matsushita Electric Ind Co Ltd | レンズアレイ |
| US6583438B1 (en) * | 1999-04-12 | 2003-06-24 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device |
| JP3467434B2 (ja) * | 1999-07-28 | 2003-11-17 | Ｎｅｃエレクトロニクス株式会社 | 固体撮像素子およびその製造方法 |
| JP4318007B2 (ja) * | 1999-10-07 | 2009-08-19 | 富士フイルム株式会社 | 固体撮像素子 |
| US6171885B1 (en) * | 1999-10-12 | 2001-01-09 | Taiwan Semiconductor Manufacturing Company | High efficiency color filter process for semiconductor array imaging devices |
| TW494574B (en) * | 1999-12-01 | 2002-07-11 | Innotech Corp | Solid state imaging device, method of manufacturing the same, and solid state imaging system |
| US6221687B1 (en) * | 1999-12-23 | 2001-04-24 | Tower Semiconductor Ltd. | Color image sensor with embedded microlens array |
| JP2001189443A (ja) * | 1999-12-28 | 2001-07-10 | Sony Corp | 固体撮像素子及びその製造方法 |
| JP3840058B2 (ja) * | 2000-04-07 | 2006-11-01 | キヤノン株式会社 | マイクロレンズ、固体撮像装置及びそれらの製造方法 |
| JP2002006113A (ja) * | 2000-06-27 | 2002-01-09 | Seiko Epson Corp | マイクロレンズ用基板の製造方法、マイクロレンズ用基板、マイクロレンズ基板、電気光学装置、液晶パネル用対向基板、液晶パネル、および投射型表示装置 |
| US6448596B1 (en) * | 2000-08-15 | 2002-09-10 | Innotech Corporation | Solid-state imaging device |
| JP2003249634A (ja) * | 2002-02-25 | 2003-09-05 | Sony Corp | 固体撮像素子およびその製造方法 |
-
2002
- 2002-03-08 JP JP2002063611A patent/JP2003264284A/ja active Pending
-
2003
- 2003-03-04 CN CNB031068219A patent/CN100342542C/zh not_active Expired - Fee Related
- 2003-03-05 TW TW092104618A patent/TWI221029B/zh not_active IP Right Cessation
- 2003-03-05 US US10/382,413 patent/US6936873B2/en not_active Expired - Fee Related
- 2003-03-07 KR KR10-2003-0014278A patent/KR100500064B1/ko not_active Expired - Fee Related
-
2004
- 2004-12-28 US US11/025,618 patent/US20050110052A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US6936873B2 (en) | 2005-08-30 |
| US20050110052A1 (en) | 2005-05-26 |
| TW200304215A (en) | 2003-09-16 |
| JP2003264284A (ja) | 2003-09-19 |
| CN1444287A (zh) | 2003-09-24 |
| US20030168678A1 (en) | 2003-09-11 |
| KR20030082360A (ko) | 2003-10-22 |
| CN100342542C (zh) | 2007-10-10 |
| KR100500064B1 (ko) | 2005-07-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3526058B2 (ja) | 光弁用半導体装置 | |
| TWI221029B (en) | Solid state image device and manufacturing method thereof | |
| TWI399849B (zh) | 固態成像裝置，製造固態成像裝置之方法，及電子設備 | |
| WO2017118060A1 (zh) | 指纹识别装置及其制作方法、阵列基板、显示装置 | |
| CN112928134A (zh) | 阵列基板和显示面板 | |
| CN110729314A (zh) | 光学感测装置 | |
| CN102473792A (zh) | 光传感器、半导体器件和液晶面板 | |
| CN108807436A (zh) | 半导体器件及其制造方法 | |
| CN100411185C (zh) | 用以改善图像传感器灵敏度的方法 | |
| JPH05110049A (ja) | 赤外線固体撮像素子及びその製造方法 | |
| JP2000156522A (ja) | 光電変換装置 | |
| JP2003264284A5 (enExample) | ||
| KR100661411B1 (ko) | 마이크로렌즈의 제조 방법 | |
| CN100474631C (zh) | 垂直二极管、矩阵位置敏感装置及其制造方法 | |
| JP3814568B2 (ja) | 光電変換装置及びそれを用いたｘ線検出装置 | |
| JP2004319896A (ja) | 固体撮像装置及びその製造方法 | |
| CN102208428A (zh) | 图像传感器及其形成方法 | |
| CN107978609B (zh) | 一种阵列基板及显示装置 | |
| JP2000106425A (ja) | 固体撮像素子及びその製造方法 | |
| CN100383977C (zh) | 固体摄像装置的制造方法 | |
| JP2002094038A (ja) | 固体撮像装置およびその製造方法 | |
| TW202023039A (zh) | 影像感測器及其製造方法 | |
| JP2006310825A (ja) | 固体撮像素子およびその製造方法 | |
| JP2003318384A (ja) | 固体撮像素子およびその製造方法 | |
| JP2006222366A (ja) | 固体撮像素子およびその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |