KR100500064B1 - 고체 촬상 소자 및 그 제조 방법 - Google Patents

고체 촬상 소자 및 그 제조 방법 Download PDF

Info

Publication number
KR100500064B1
KR100500064B1 KR10-2003-0014278A KR20030014278A KR100500064B1 KR 100500064 B1 KR100500064 B1 KR 100500064B1 KR 20030014278 A KR20030014278 A KR 20030014278A KR 100500064 B1 KR100500064 B1 KR 100500064B1
Authority
KR
South Korea
Prior art keywords
film
insulating film
light
region
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2003-0014278A
Other languages
English (en)
Korean (ko)
Other versions
KR20030082360A (ko
Inventor
고니시미노루
Original Assignee
산요덴키가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 산요덴키가부시키가이샤 filed Critical 산요덴키가부시키가이샤
Publication of KR20030082360A publication Critical patent/KR20030082360A/ko
Application granted granted Critical
Publication of KR100500064B1 publication Critical patent/KR100500064B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR10-2003-0014278A 2002-03-08 2003-03-07 고체 촬상 소자 및 그 제조 방법 Expired - Fee Related KR100500064B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00063611 2002-03-08
JP2002063611A JP2003264284A (ja) 2002-03-08 2002-03-08 固体撮像素子及びその製造方法

Publications (2)

Publication Number Publication Date
KR20030082360A KR20030082360A (ko) 2003-10-22
KR100500064B1 true KR100500064B1 (ko) 2005-07-12

Family

ID=27784930

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-0014278A Expired - Fee Related KR100500064B1 (ko) 2002-03-08 2003-03-07 고체 촬상 소자 및 그 제조 방법

Country Status (5)

Country Link
US (2) US6936873B2 (enExample)
JP (1) JP2003264284A (enExample)
KR (1) KR100500064B1 (enExample)
CN (1) CN100342542C (enExample)
TW (1) TWI221029B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004319784A (ja) 2003-04-16 2004-11-11 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
JP2005057137A (ja) * 2003-08-06 2005-03-03 Sanyo Electric Co Ltd 固体撮像装置の製造方法
KR100578644B1 (ko) * 2004-05-06 2006-05-11 매그나칩 반도체 유한회사 프리즘을 구비한 시모스 이미지센서 및 그 제조방법
JP2006344644A (ja) * 2005-06-07 2006-12-21 Matsushita Electric Ind Co Ltd 固体撮像装置およびカメラならびに固体撮像装置の製造方法
US20060289777A1 (en) * 2005-06-29 2006-12-28 Wen Li Detector with electrically isolated pixels
JP5061579B2 (ja) * 2006-11-02 2012-10-31 凸版印刷株式会社 固体撮像装置及びその製造方法
JP2009076746A (ja) * 2007-09-21 2009-04-09 Fujifilm Corp 固体撮像素子、撮像装置、及び固体撮像素子の製造方法
JP2010206009A (ja) * 2009-03-04 2010-09-16 Toshiba Corp 撮像装置及びその製造方法、並びに撮像方法
KR101106980B1 (ko) * 2009-03-19 2012-01-20 안동준 레일 바이크
CN103210494B (zh) * 2010-11-10 2016-01-06 夏普株式会社 显示装置用基板及其制造方法、显示装置
KR101038445B1 (ko) * 2011-01-24 2011-06-01 (주) 한국 레드벤쳐 레저용 레일 바이크
US10553479B2 (en) 2017-02-16 2020-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with contact pad and fabrication method therefore

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05134111A (ja) * 1991-11-15 1993-05-28 Sharp Corp 固体撮像装置
JPH0637297A (ja) * 1992-07-16 1994-02-10 Nec Corp 固体撮像装置およびその駆動方法
JPH06232379A (ja) * 1993-02-01 1994-08-19 Sharp Corp 固体撮像素子
JPH06326284A (ja) * 1993-05-12 1994-11-25 Matsushita Electron Corp カラー固体撮像装置
JPH0763904A (ja) * 1993-08-25 1995-03-10 Asahi Glass Co Ltd 複合球面マイクロレンズアレイ及びその製造方法
JP2950714B2 (ja) * 1993-09-28 1999-09-20 シャープ株式会社 固体撮像装置およびその製造方法
JPH07106538A (ja) * 1993-09-30 1995-04-21 Olympus Optical Co Ltd 固体撮像装置の製造方法
JP3566331B2 (ja) * 1994-03-11 2004-09-15 リコー光学株式会社 光学デバイス・光学デバイス製造方法
JPH0927608A (ja) * 1995-05-11 1997-01-28 Sony Corp 固体撮像装置とその製造方法
JP3405620B2 (ja) * 1995-05-22 2003-05-12 松下電器産業株式会社 固体撮像装置
JPH0964325A (ja) * 1995-08-23 1997-03-07 Sony Corp 固体撮像素子とその製造方法
JPH10270672A (ja) * 1997-03-25 1998-10-09 Sony Corp 固体撮像素子
JP3447510B2 (ja) * 1997-04-09 2003-09-16 Ｎｅｃエレクトロニクス株式会社 固体撮像素子、その製造方法及び固体撮像装置
JP2000091548A (ja) * 1998-09-08 2000-03-31 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
JP2000124435A (ja) * 1998-10-19 2000-04-28 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
JP2000196060A (ja) * 1998-12-24 2000-07-14 Nec Corp 固体撮像装置およびその製造方法
JP2000206310A (ja) * 1999-01-19 2000-07-28 Matsushita Electric Ind Co Ltd レンズアレイ
US6583438B1 (en) * 1999-04-12 2003-06-24 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device
JP3467434B2 (ja) * 1999-07-28 2003-11-17 Ｎｅｃエレクトロニクス株式会社 固体撮像素子およびその製造方法
JP4318007B2 (ja) * 1999-10-07 2009-08-19 富士フイルム株式会社 固体撮像素子
US6171885B1 (en) * 1999-10-12 2001-01-09 Taiwan Semiconductor Manufacturing Company High efficiency color filter process for semiconductor array imaging devices
TW494574B (en) * 1999-12-01 2002-07-11 Innotech Corp Solid state imaging device, method of manufacturing the same, and solid state imaging system
US6221687B1 (en) * 1999-12-23 2001-04-24 Tower Semiconductor Ltd. Color image sensor with embedded microlens array
JP2001189443A (ja) * 1999-12-28 2001-07-10 Sony Corp 固体撮像素子及びその製造方法
JP3840058B2 (ja) * 2000-04-07 2006-11-01 キヤノン株式会社 マイクロレンズ、固体撮像装置及びそれらの製造方法
JP2002006113A (ja) * 2000-06-27 2002-01-09 Seiko Epson Corp マイクロレンズ用基板の製造方法、マイクロレンズ用基板、マイクロレンズ基板、電気光学装置、液晶パネル用対向基板、液晶パネル、および投射型表示装置
US6448596B1 (en) * 2000-08-15 2002-09-10 Innotech Corporation Solid-state imaging device
JP2003249634A (ja) * 2002-02-25 2003-09-05 Sony Corp 固体撮像素子およびその製造方法

Also Published As

Publication number Publication date
TWI221029B (en) 2004-09-11
TW200304215A (en) 2003-09-16
US20050110052A1 (en) 2005-05-26
US20030168678A1 (en) 2003-09-11
US6936873B2 (en) 2005-08-30
CN1444287A (zh) 2003-09-24
JP2003264284A (ja) 2003-09-19
KR20030082360A (ko) 2003-10-22
CN100342542C (zh) 2007-10-10

Similar Documents

Publication Publication Date Title
US12094907B2 (en) Image sensor
KR100500064B1 (ko) 고체 촬상 소자 및 그 제조 방법
US20140103412A1 (en) Three-dimensional image sensors and methods of fabricating the same
CN110729314A (zh) 光学感测装置
CN106298819B (zh) 背照式影像感测器及其制作方法
US5537146A (en) Solid state imaging device having a plurality of signal lines for shift-register section extending over photoelectric conversion section
JP2021077881A (ja) イメージセンサー
CN103337507A (zh) 图像传感器及其形成方法
KR20200126477A (ko) 이미지 센서
JP2007287872A (ja) 半導体素子及び半導体素子の製造方法
KR100661411B1 (ko) 마이크로렌즈의 제조 방법
KR20000041459A (ko) 집광기로서 경사진 반사층을 갖는 이미지센서 및 그 제조방법
CN215988760U (zh) 图像传感器
JP4448087B2 (ja) Ｃｍｏｓイメージセンサーとその製造方法
CN118866920A (zh) 成像系统、图像传感器及其制备方法
CN115775805A (zh) 图像传感器及其制作方法
KR100649020B1 (ko) 씨모스 이미지 센서 및 그 제조방법
JP2000106425A (ja) 固体撮像素子及びその製造方法
KR100374264B1 (ko) 고체촬상소자및고체촬상소자의제조방법
CN100383977C (zh) 固体摄像装置的制造方法
CN217280770U (zh) 图像传感器
US20250324791A1 (en) Image sensor and method of fabricating the same
US20240162263A1 (en) Imaging device
JP2004356270A (ja) 光電変換装置およびその製造方法
JP2000124435A (ja) 固体撮像素子及びその製造方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20080623

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20090630

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20090630

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000