CN100342542C - 固态摄像元件及其制造方法 - Google Patents

固态摄像元件及其制造方法 Download PDF

Info

Publication number
CN100342542C
CN100342542C CNB031068219A CN03106821A CN100342542C CN 100342542 C CN100342542 C CN 100342542C CN B031068219 A CNB031068219 A CN B031068219A CN 03106821 A CN03106821 A CN 03106821A CN 100342542 C CN100342542 C CN 100342542C
Authority
CN
China
Prior art keywords
dielectric film
isolation
area
electric power
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB031068219A
Other languages
English (en)
Chinese (zh)
Other versions
CN1444287A (zh
Inventor
小西稔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of CN1444287A publication Critical patent/CN1444287A/zh
Application granted granted Critical
Publication of CN100342542C publication Critical patent/CN100342542C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CNB031068219A 2002-03-08 2003-03-04 固态摄像元件及其制造方法 Expired - Fee Related CN100342542C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002063611A JP2003264284A (ja) 2002-03-08 2002-03-08 固体撮像素子及びその製造方法
JP2002063611 2002-03-08

Publications (2)

Publication Number Publication Date
CN1444287A CN1444287A (zh) 2003-09-24
CN100342542C true CN100342542C (zh) 2007-10-10

Family

ID=27784930

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031068219A Expired - Fee Related CN100342542C (zh) 2002-03-08 2003-03-04 固态摄像元件及其制造方法

Country Status (5)

Country Link
US (2) US6936873B2 (enExample)
JP (1) JP2003264284A (enExample)
KR (1) KR100500064B1 (enExample)
CN (1) CN100342542C (enExample)
TW (1) TWI221029B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004319784A (ja) 2003-04-16 2004-11-11 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
JP2005057137A (ja) * 2003-08-06 2005-03-03 Sanyo Electric Co Ltd 固体撮像装置の製造方法
KR100578644B1 (ko) * 2004-05-06 2006-05-11 매그나칩 반도체 유한회사 프리즘을 구비한 시모스 이미지센서 및 그 제조방법
JP2006344644A (ja) * 2005-06-07 2006-12-21 Matsushita Electric Ind Co Ltd 固体撮像装置およびカメラならびに固体撮像装置の製造方法
US20060289777A1 (en) * 2005-06-29 2006-12-28 Wen Li Detector with electrically isolated pixels
JP5061579B2 (ja) * 2006-11-02 2012-10-31 凸版印刷株式会社 固体撮像装置及びその製造方法
JP2009076746A (ja) * 2007-09-21 2009-04-09 Fujifilm Corp 固体撮像素子、撮像装置、及び固体撮像素子の製造方法
JP2010206009A (ja) * 2009-03-04 2010-09-16 Toshiba Corp 撮像装置及びその製造方法、並びに撮像方法
KR101106980B1 (ko) * 2009-03-19 2012-01-20 안동준 레일 바이크
CN103210494B (zh) * 2010-11-10 2016-01-06 夏普株式会社 显示装置用基板及其制造方法、显示装置
KR101038445B1 (ko) * 2011-01-24 2011-06-01 (주) 한국 레드벤쳐 레저용 레일 바이크
US10553479B2 (en) 2017-02-16 2020-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with contact pad and fabrication method therefore

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5323052A (en) * 1991-11-15 1994-06-21 Sharp Kabushiki Kaisha Image pickup device with wide angular response
JPH06326284A (ja) * 1993-05-12 1994-11-25 Matsushita Electron Corp カラー固体撮像装置
JPH07106538A (ja) * 1993-09-30 1995-04-21 Olympus Optical Co Ltd 固体撮像装置の製造方法
US5479049A (en) * 1993-02-01 1995-12-26 Sharp Kabushiki Kaisha Solid state image sensor provided with a transparent resin layer having water repellency and oil repellency and flattening a surface thereof
CN1134040A (zh) * 1995-05-22 1996-10-23 松下电子工业株式会社 固态成像器件及其制造方法
US5593913A (en) * 1993-09-28 1997-01-14 Sharp Kabushiki Kaisha Method of manufacturing solid state imaging device having high sensitivity and exhibiting high degree of light utilization
JPH0927608A (ja) * 1995-05-11 1997-01-28 Sony Corp 固体撮像装置とその製造方法
CN1196580A (zh) * 1997-04-09 1998-10-21 日本电气株式会社 改进的固态图像传感元件,其制造方法和含其的传感器件
JP2000091548A (ja) * 1998-09-08 2000-03-31 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
US6066511A (en) * 1995-08-23 2000-05-23 Sony Corporation Manufacturing method for a solid state imaging device
JP2001044401A (ja) * 1999-07-28 2001-02-16 Nec Corp 固体撮像素子およびその製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0637297A (ja) * 1992-07-16 1994-02-10 Nec Corp 固体撮像装置およびその駆動方法
JPH0763904A (ja) * 1993-08-25 1995-03-10 Asahi Glass Co Ltd 複合球面マイクロレンズアレイ及びその製造方法
JP3566331B2 (ja) * 1994-03-11 2004-09-15 リコー光学株式会社 光学デバイス・光学デバイス製造方法
JPH10270672A (ja) * 1997-03-25 1998-10-09 Sony Corp 固体撮像素子
JP2000124435A (ja) * 1998-10-19 2000-04-28 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
JP2000196060A (ja) * 1998-12-24 2000-07-14 Nec Corp 固体撮像装置およびその製造方法
JP2000206310A (ja) * 1999-01-19 2000-07-28 Matsushita Electric Ind Co Ltd レンズアレイ
US6583438B1 (en) * 1999-04-12 2003-06-24 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device
JP4318007B2 (ja) * 1999-10-07 2009-08-19 富士フイルム株式会社 固体撮像素子
US6171885B1 (en) * 1999-10-12 2001-01-09 Taiwan Semiconductor Manufacturing Company High efficiency color filter process for semiconductor array imaging devices
TW494574B (en) * 1999-12-01 2002-07-11 Innotech Corp Solid state imaging device, method of manufacturing the same, and solid state imaging system
US6221687B1 (en) * 1999-12-23 2001-04-24 Tower Semiconductor Ltd. Color image sensor with embedded microlens array
JP2001189443A (ja) * 1999-12-28 2001-07-10 Sony Corp 固体撮像素子及びその製造方法
JP3840058B2 (ja) * 2000-04-07 2006-11-01 キヤノン株式会社 マイクロレンズ、固体撮像装置及びそれらの製造方法
JP2002006113A (ja) * 2000-06-27 2002-01-09 Seiko Epson Corp マイクロレンズ用基板の製造方法、マイクロレンズ用基板、マイクロレンズ基板、電気光学装置、液晶パネル用対向基板、液晶パネル、および投射型表示装置
US6448596B1 (en) * 2000-08-15 2002-09-10 Innotech Corporation Solid-state imaging device
JP2003249634A (ja) * 2002-02-25 2003-09-05 Sony Corp 固体撮像素子およびその製造方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5323052A (en) * 1991-11-15 1994-06-21 Sharp Kabushiki Kaisha Image pickup device with wide angular response
US5479049A (en) * 1993-02-01 1995-12-26 Sharp Kabushiki Kaisha Solid state image sensor provided with a transparent resin layer having water repellency and oil repellency and flattening a surface thereof
JPH06326284A (ja) * 1993-05-12 1994-11-25 Matsushita Electron Corp カラー固体撮像装置
US5593913A (en) * 1993-09-28 1997-01-14 Sharp Kabushiki Kaisha Method of manufacturing solid state imaging device having high sensitivity and exhibiting high degree of light utilization
JPH07106538A (ja) * 1993-09-30 1995-04-21 Olympus Optical Co Ltd 固体撮像装置の製造方法
JPH0927608A (ja) * 1995-05-11 1997-01-28 Sony Corp 固体撮像装置とその製造方法
CN1134040A (zh) * 1995-05-22 1996-10-23 松下电子工业株式会社 固态成像器件及其制造方法
US6066511A (en) * 1995-08-23 2000-05-23 Sony Corporation Manufacturing method for a solid state imaging device
CN1196580A (zh) * 1997-04-09 1998-10-21 日本电气株式会社 改进的固态图像传感元件,其制造方法和含其的传感器件
JP2000091548A (ja) * 1998-09-08 2000-03-31 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
JP2001044401A (ja) * 1999-07-28 2001-02-16 Nec Corp 固体撮像素子およびその製造方法

Also Published As

Publication number Publication date
TWI221029B (en) 2004-09-11
TW200304215A (en) 2003-09-16
US20050110052A1 (en) 2005-05-26
US20030168678A1 (en) 2003-09-11
US6936873B2 (en) 2005-08-30
CN1444287A (zh) 2003-09-24
JP2003264284A (ja) 2003-09-19
KR100500064B1 (ko) 2005-07-12
KR20030082360A (ko) 2003-10-22

Similar Documents

Publication Publication Date Title
US7511750B2 (en) Photo-electric converting device and its driving method, and its manufacturing method, solid-state image pickup device and its driving method and its manufacturing method
US7816641B2 (en) Light guide array for an image sensor
CN100342542C (zh) 固态摄像元件及其制造方法
CN101494229B (zh) 固体摄像器件
KR102652444B1 (ko) 이미지 센서
US20200027915A1 (en) Optical sensor device
CN1873993A (zh) 像素传感器及其形成方法
KR102824308B1 (ko) 이미지 센서
US20250366238A1 (en) Method for forming light pipe structure with high quantum efficiency
JPH10163462A (ja) マス型フィルタ構造による固体撮像素子及び製造方法
US8455811B2 (en) Light guide array for an image sensor
KR20060133178A (ko) 이미지센서의 칼라필터 형성방법 및 이를 이용하여 제조된이미지 센서
CN100392862C (zh) 固体摄像元件及其制造方法
CN102208428A (zh) 图像传感器及其形成方法
US6300160B1 (en) Process for charge coupled image sensor with U-shaped gates
CN114613793A (zh) 半导体结构
US6489246B1 (en) Method for manufacturing charge-coupled image sensors
JPS6259466B2 (enExample)
CN1819239A (zh) Cmos图像传感器的光电二极管及其制造方法
US6403993B1 (en) Charge coupled image sensor with u-shaped gates
US20050051816A1 (en) Semiconductor light receiving device and manufacturing method for the same
CN1581499A (zh) 固体摄像装置的制造方法
CN202111093U (zh) 一种图像传感器
CN120050977A (zh) 控制电路、薄膜晶体管及其制造方法
CN1992307A (zh) 图像传感器及其制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20071010