TW594891B - The adhesive-attached tape for semiconductor substrate and using them for the copper-affixed laminates - Google Patents
The adhesive-attached tape for semiconductor substrate and using them for the copper-affixed laminates Download PDFInfo
- Publication number
- TW594891B TW594891B TW090120598A TW90120598A TW594891B TW 594891 B TW594891 B TW 594891B TW 090120598 A TW090120598 A TW 090120598A TW 90120598 A TW90120598 A TW 90120598A TW 594891 B TW594891 B TW 594891B
- Authority
- TW
- Taiwan
- Prior art keywords
- adhesive
- resin
- adhesive tape
- tape
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 239000000758 substrate Substances 0.000 title claims abstract description 22
- 239000012790 adhesive layer Substances 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims abstract description 14
- 239000010408 film Substances 0.000 claims description 47
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 30
- 229920005989 resin Polymers 0.000 claims description 26
- 239000011347 resin Substances 0.000 claims description 26
- 239000002390 adhesive tape Substances 0.000 claims description 22
- 239000002253 acid Substances 0.000 claims description 14
- 229920001721 polyimide Polymers 0.000 claims description 12
- 239000005011 phenolic resin Substances 0.000 claims description 10
- 229920000768 polyamine Polymers 0.000 claims description 10
- 239000003822 epoxy resin Substances 0.000 claims description 8
- 229920000647 polyepoxide Polymers 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- 229920001187 thermosetting polymer Polymers 0.000 claims description 7
- 229920005992 thermoplastic resin Polymers 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 239000009719 polyimide resin Substances 0.000 claims description 5
- 239000004952 Polyamide Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229920002647 polyamide Polymers 0.000 claims description 3
- 229920000728 polyester Polymers 0.000 claims description 3
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- 229920002635 polyurethane Polymers 0.000 claims description 2
- 239000004814 polyurethane Substances 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 32
- 230000001070 adhesive effect Effects 0.000 description 30
- 239000000853 adhesive Substances 0.000 description 27
- 239000011889 copper foil Substances 0.000 description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 21
- 238000005452 bending Methods 0.000 description 20
- 238000011156 evaluation Methods 0.000 description 19
- 238000012545 processing Methods 0.000 description 19
- 229910000679 solder Inorganic materials 0.000 description 18
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 17
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 17
- 229910052737 gold Inorganic materials 0.000 description 14
- 239000010931 gold Substances 0.000 description 14
- 230000005540 biological transmission Effects 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 238000012360 testing method Methods 0.000 description 11
- 238000010521 absorption reaction Methods 0.000 description 10
- 230000008859 change Effects 0.000 description 10
- -1 siloxane structure Chemical group 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 238000009616 inductively coupled plasma Methods 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 238000005476 soldering Methods 0.000 description 6
- 235000010384 tocopherol Nutrition 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- 235000019731 tricalcium phosphate Nutrition 0.000 description 6
- 238000003466 welding Methods 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000000539 dimer Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229920006122 polyamide resin Polymers 0.000 description 5
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 4
- 150000001412 amines Chemical group 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 125000000524 functional group Chemical group 0.000 description 4
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000004448 titration Methods 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 150000004985 diamines Chemical class 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 238000013007 heat curing Methods 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 2
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 2
- GJYCVCVHRSWLNY-UHFFFAOYSA-N 2-butylphenol Chemical compound CCCCC1=CC=CC=C1O GJYCVCVHRSWLNY-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- 239000001361 adipic acid Substances 0.000 description 2
- 235000011037 adipic acid Nutrition 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- KJFMBFZCATUALV-UHFFFAOYSA-N phenolphthalein Chemical compound C1=CC(O)=CC=C1C1(C=2C=CC(O)=CC=2)C2=CC=CC=C2C(=O)O1 KJFMBFZCATUALV-UHFFFAOYSA-N 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000962 poly(amidoamine) Polymers 0.000 description 2
- 238000006068 polycondensation reaction Methods 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallyl group Chemical group C1(=C(C(=CC=C1)O)O)O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- QIDUHGHFWAMMPV-UHFFFAOYSA-N 1,1-diphenylethylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)(C)C1=CC=CC=C1 QIDUHGHFWAMMPV-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- XKZQKPRCPNGNFR-UHFFFAOYSA-N 2-(3-hydroxyphenyl)phenol Chemical compound OC1=CC=CC(C=2C(=CC=CC=2)O)=C1 XKZQKPRCPNGNFR-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- WADSJYLPJPTMLN-UHFFFAOYSA-N 3-(cycloundecen-1-yl)-1,2-diazacycloundec-2-ene Chemical compound C1CCCCCCCCC=C1C1=NNCCCCCCCC1 WADSJYLPJPTMLN-UHFFFAOYSA-N 0.000 description 1
- WXAIEIRYBSKHDP-UHFFFAOYSA-N 4-phenyl-n-(4-phenylphenyl)-n-[4-[4-(4-phenyl-n-(4-phenylphenyl)anilino)phenyl]phenyl]aniline Chemical compound C1=CC=CC=C1C1=CC=C(N(C=2C=CC(=CC=2)C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC=CC=2)C=C1 WXAIEIRYBSKHDP-UHFFFAOYSA-N 0.000 description 1
- 241000208140 Acer Species 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 241000219823 Medicago Species 0.000 description 1
- 235000017587 Medicago sativa ssp. sativa Nutrition 0.000 description 1
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 description 1
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- YXVFYQXJAXKLAK-UHFFFAOYSA-N biphenyl-4-ol Chemical compound C1=CC(O)=CC=C1C1=CC=CC=C1 YXVFYQXJAXKLAK-UHFFFAOYSA-N 0.000 description 1
- NTXGQCSETZTARF-UHFFFAOYSA-N buta-1,3-diene;prop-2-enenitrile Chemical compound C=CC=C.C=CC#N NTXGQCSETZTARF-UHFFFAOYSA-N 0.000 description 1
- FACXGONDLDSNOE-UHFFFAOYSA-N buta-1,3-diene;styrene Chemical compound C=CC=C.C=CC1=CC=CC=C1.C=CC1=CC=CC=C1 FACXGONDLDSNOE-UHFFFAOYSA-N 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical class C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
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- 125000001475 halogen functional group Chemical group 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 description 1
- 238000005040 ion trap Methods 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- NUHSROFQTUXZQQ-UHFFFAOYSA-N isopentenyl diphosphate Chemical compound CC(=C)CCO[P@](O)(=O)OP(O)(O)=O NUHSROFQTUXZQQ-UHFFFAOYSA-N 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- JFNWATIZEGZGSY-UHFFFAOYSA-N n,n-diethylethanamine;trifluoroborane Chemical compound FB(F)F.CCN(CC)CC JFNWATIZEGZGSY-UHFFFAOYSA-N 0.000 description 1
- JGGQWILNAAODRS-UHFFFAOYSA-N n-methyl-4-[4-(methylamino)phenyl]aniline Chemical compound C1=CC(NC)=CC=C1C1=CC=C(NC)C=C1 JGGQWILNAAODRS-UHFFFAOYSA-N 0.000 description 1
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 1
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
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- 229920003023 plastic Polymers 0.000 description 1
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- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
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- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- IWZKICVEHNUQTL-UHFFFAOYSA-M potassium hydrogen phthalate Chemical compound [K+].OC(=O)C1=CC=CC=C1C([O-])=O IWZKICVEHNUQTL-UHFFFAOYSA-M 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical group CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- 238000004381 surface treatment Methods 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
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- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49572—Lead-frames or other flat leads consisting of thin flexible metallic tape with or without a film carrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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Landscapes
- Engineering & Computer Science (AREA)
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- Adhesive Tapes (AREA)
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- Wire Bonding (AREA)
- Adhesives Or Adhesive Processes (AREA)
Description
594891 五、 發 •明說明(1 ) [ 發 明 範圍】 本 發 明係相關半導 體積體電路裝接時所使用 之 如 卷 帶 白 動 接 合 (TAB )方式之圖案加工膠帶、球格式陣列(BGA )封 裝 用 插 入 板等半導體連 接用基板、晶粒黏接材料 、 導 線 架 固 定 膠 帶 、LOC膠帶、 多層基板之層間黏接片等 採 用 薄 膜 狀 黏 著 劑 而製造半導體 裝置的附黏著劑膠帶、及 使 用 其 之 貼 銅 積 層 板、半導體連 接用基板及半導體裝置。 [ 技 術 背景】 習 知 半導體積體電 路(1C)之裝接技術係如下: 述 〇 在 1C裝接上,雖 以採用金屬製導線架方式 爲 最 多 採 用 的 方 式 ,但近年在玻 璃環氧樹脂或聚醯亞胺等 有 機 絕 緣 性 薄 膜 上 ,形成IC連 接用導體圖案之隔著連接 用 基 板 的 方 式 有 增加的趨勢。 以代表性而言,有如依卷 帶 白 動 接 合 (TAB )方式的卷帶承載器裝接(TCP )。 在 TCP連接用基板 (圖案膠帶)上,使用附著 TAB 用 黏 著 劑 膠 帶 (以下稱「TAB 用膠帶」),乃屬一般。$ 通常 TAB 用 膠 帶 係 在具可撓性絕 緣性薄膜上,利用層合有 具 脫 膜 性 聚 酯 薄 膜 等3層構造, 而構成未硬化狀態的黏著 劑 層 及保 護 薄 膜 層 〇 TAB 用膠帶係經由 (1 )傳動孔及元件孔的穿孔、 2) 銅 箔 、 熱 層 合及黏著劑加 熱硬化、(3 )圖案形成(光 阻 塗 佈 - 蝕 刻 光 阻去除)、(4 : )錫或金-電鑛處理等加工 程 序 而 對 連 接 用 基板的TAB膠 帶(圖案膠帶)進行加工。 -3- 第 1 圖 所 示 594891 五、發明說明(2 ) 係圖案膠帶的形狀。在有機絕緣性薄膜1上,設有黏著劑 2、導電圖案5,並設置有供傳送薄膜用的傳動孔3、放置 元件的元件孔4。第2圖所示係TCP型半導體裝置之一態 樣的剖面示意圖。將圖案膠帶的內連線6,熱壓接(內連線 黏接)於半導體積體電路8的金.軟焊1 0上,而搭載上半導 體積體電路。其次,經過利用封裝樹脂9的樹脂封裝程序 ,而製成半導體裝置。最後,TCP型半導體裝置,係透過 搭載其他元件的電路基板等,與外導線7而連接,並裝接 於電子機器上。 再者,隨近年電子機器的小型、輕量化,半導體封裝亦 在高密度裝接化之目的下,遂採用封裝體背面排列有連接 端子之BGA(球格式陣列)、CSP(晶片型封裝)。在BGA、 CSP中,如同TCP般,均必須採用通稱插入板的連接用基 板。但,在IC連接方法中,在習知TCP中,大半數均爲 TAB方式的晶片型封裝,相對於此,在BGA、CSP中,則不 論TAB方式或打線接合方式,在依各封裝體規格、用途、 設計方針等的選擇上將有所不同。第3圖及第4圖所示係 半導體裝置(BGA、CSP)之一態樣的剖面示意圖。圖中,12 、20係有機絕緣性薄膜,1 3、21係黏著劑,1 4、22係導 體圖案,15、23係半導體積體電路,16、24係封裝樹脂 ,17、25係金軟焊,1 8、26係焊球,1 9係補強板,27係 銲錫光阻。 此處所謂的插入板係擁有如前述TCP圖案膠帶相同功能 五、發明說明(3) 者,可採用附TAB用黏著劑膠帶。理所當然對具內連線的 連接方式較有利,特別適用於依機械式打穿焊球用孔、或 I C用元件孔之後,再層合銅箔的處理程序。此外,因爲利 用打線接合連接,所以亦可不需要內連線,而採行在每個 銅箔上鑿開焊球用孔或I c用元件孔的處理程序中,層合 上所有銅箔,在加熱硬化黏著劑的貼銅積層板。 在CSP、BGA等最先進的平列型封裝中,便要求更高裝 接密度化,而朝屬外部端子之焊球狹窄間距化方向前進。 譬如,焊球間距係由習知的1 . 2 7 m m演變成1 . 〇 〇 m m,而介 層窗孔徑則由1 mm演變至Ο . 5mm的細微化方向前進。其中 ,在屬基底薄膜的聚醯亞胺等絕緣性薄膜中,在習知 7 5 // m厚度上穿孔的程序上,大多均將形成阻礙,因此便 逐漸要求轉向於50//m厚度。 但是,若厚度較7 5 // m爲薄,便會產生剛性降低,且在 貼銅箔時將容易產生彎曲的問題。另,就由細微加工的容 易度而g ’銅范亦有薄膜化的傾向,雖由習知3 5 // m厚度 ,演變至以現在的1 8 // m或1 5 // m厚度爲主流,但此亦形 成問題發生的原因之一。 相對於此,便有探討在習知附黏著劑膠帶中,將矽氧烷 構造導入黏著劑中,利用使其擁有柔軟性而迴避彎曲的方 法(US5180627)。 惟,包含此方法在內,亦嘗試藉由改善黏著劑而降低彎 曲’但截至此爲止仍無法獲得充分的成果,且實用上亦較 594891 五、發明說明(5) 態黏著劑層的層合體所構成; (1 ) 5 0〜2 0 0 °C中薄膜寬度方向(TD )之線性膨脹係數爲 17 〜30ppm/〇C (2)拉張彈性係數爲6〜12Gpa。 【圖式簡單說明】 第1圖所不係本發明之半導體用附黏著劑膠帶施行加 工而所獲得之搭載半導體積體電路前的半導體連接用基板 (圖形加工膠帶)之實施型式的立體示意圖。 第2圖係採用本發明半導體用附黏著劑膠帶之半導體裝 置(TCP )實施型式的剖面示意圖。 第3圖係採用本發明半導體用附黏著劑膠帶之半導體裝 置(BGA )實施型式的剖面示意圖。 第4圖係採用本發明半導體用附黏著劑膠帶之半導體裝 置(CSP)實施型式的剖面示意圖。 【圖示符號說明】1,12,20 2.13.21 3 4 5.14.22 6 7 8.15.23 絕緣性薄膜 黏著劑 傳動孔 元件孔 半導體積體電路連接用導體 內連線 外導線 半導體積體電路 594891 _、發明說明( 6) 9,16,24 封裝樹脂 )0,17,27 金軟焊 11 保護膜 18,26 焊球 19 補強板 27 銲錫光阻 【本發明實施之較佳形態】 本發明所採用的絕緣性薄膜,譬如聚醯亞胺、聚酯、聚 苯硫、聚醚楓、聚醚酮醚、芳族聚醯胺、聚碳酸酯、聚醯 丙醋、液晶聚合物等塑膠、或浸漬環氧樹脂的玻璃織物等 複合材料所構成的薄膜,亦可採用將選擇自該等之中的複 數薄膜進行層合者。其中特別以聚醯亞胺樹脂爲主成分的 薄膜具優越機械、電子、耐熱、化學等諸特性,且成本上 亦較爲平衡,故屬較佳者。絕緣性薄膜配合需要,亦可在 單面或雙面上施行加水分解、電暈放電、低溫電漿、物理 粗面化、易黏著塗佈等表面處理。 絕緣性薄膜的膜厚最好爲1 〇〜6 5 v m,尤以2 5〜5 5 // m爲 佳。若較1 0 // m爲薄的話,機械強度將降低,圖案加工以 後的各處理程序中的作業性將變差,乃屬較不佳的狀況。 反之,若較6 5 // m爲厚的話,則軟焊球、介層窗的細微化 將較爲困難,亦屬較不佳的狀況。 薄膜寬度方向(TD )的線性膨脹係數,最好大於所貼合金 屬箔的線性膨脹係數。當金屬箔爲電解銅箔之情況時’ 五、發明說明(8) ASTM D 1 204的方法,爲例示於實施例之評估方法(3)的方 法。 絕緣性薄膜層在薄膜寬度方向(TD )的溼度膨脹係數,最 好爲23ppm/t:,尤以5〜20ppm/°C爲佳,係以5〜15ppm/°C 爲更佳。溼度膨脹係數係如同線性膨脹係數般,將影響貼 銅箔狀態下的彎曲,若大於23 ppm/ °C之情況時,貼銅箔狀 態下的彎曲情形將變大,乃爲較差狀況。溼度膨脹係數的 正確測量條件,係例示於實施例之評估方法(4 )。 絕緣性薄膜層的吸水率最好在1 . 7%以下,尤以在1 . 5% 以下者爲佳。當吸水率超越1.7%之情況時,隨半導體裝接 時的焊接熱而汽化的水份量將變多,所以在TAB膠帶的構 造元件間將產生剝脫等情形,而造成軟焊耐熱性降低。吸 水率的測量條件係顯示於實施例之評估方法(5 )中。 絕緣性薄膜層的熱傳率最好在〇 . 40W / m*k以下,尤以在 0.30W/nrk以下爲佳。當熱傳率超過〇.40W/m·]^時,焊接 熱將較容易傳導於絕緣性薄膜層、黏著劑層,導致絕緣性 薄膜層及黏著劑層中所含的水分較容易汽化、膨脹。因此 ’在TAB膠帶的構成元件間變較容易產生剝脫等情形,而 導致軟焊耐熱性較低。熱傳率的測量方法係例示於實施例 的評估方法(6 )中。 絕緣性薄膜層的水蒸氣穿透率最好在〇 . 〇 4 g / in2 / 2 4 h r以 上。若水蒸氣穿透率小於〇 · 〇 4 g / m2 / 2 4 h r,基材所吸收的 水分在焊接加熱時便將不脫逸,而造成爆發性水蒸氣化、 -10- 五、發明說明(9) 膨脹,導致產生構成兀件的剝脫。水蒸氣穿透率的測量條 件係例示於實施例的評估方法(7 )中。 黏著劑層通常係以半硬化狀態供給’僅要具備有在銅箔 層合後,可利用由加熱、加壓、電場、磁場、紫外線、放 射線、超音波等之中至少選擇一種以上的能量附加,而加 以硬化、交聯即可,在化學構造上並無特別的限制。特別 係含有由如環氧樹脂、苯酚樹脂、聚醯亞胺樹脂、馬來醯 亞胺樹脂等之中至少選擇其中一種熱硬化樹脂者。熱硬化 樹脂的添加量,係黏著劑層最好在2〜20重量%,尤以4〜1 5 重量%爲佳。另,硬化前的黏著劑厚度最好在3〜50// m範 圍者爲佳。 環氧樹脂係僅要一個分子內,含有二個以上環氧基即可 ’其餘並無特別的限制,可舉例如聯苯酚F、聯苯酚A、 聯苯酚S、二羥基萘、雙環戊二烯二苯酚、雙環戊二烯二 甲苯酚等二縮水甘油醚、環氧化苯酚酚醛、環氧化甲酚酚 醛、環氧化三苯甲烷、環氧化三苯乙烷、環氧化間二甲苯 二胺、脂環式環氧等。 苯酚樹脂可採用如酚醛淸漆型苯酚樹脂、甲階酚醛型 苯酚樹脂等任一種習知苯酚樹脂。可舉例如苯酚、甲酚 、對第三丁基苯酚、壬基苯酚、對苯基苯酚等烷基取代 苯酚;萜烯、二環戊二烯等環狀烷基改質苯酚·,具有含 硝基、鹵基、氰基、胺基等雜原子之官能基者;具有蒽 等骨架者;由聯苯酚F、聯苯酚A、聯苯酚S、間苯二酚 -11- 594891 五、發明說明(1〇) 、焦掊酚等多官能基所構成的樹脂。 聚醯亞胺樹脂可舉例如由均苯四甲酸、3,3 ’,4,4 ’ -雙 苯四甲酸、3,3\4,4’-二苯甲酮四甲酸等芳香族四羧酸 的二酐物,與4,4 ’ -二胺二苯醚、4,4 二胺二苯礪、對 苯二胺、二甲基聯苯胺、3,3 ’ -二胺二甲苯等二胺類,經 縮聚合而所獲得的聚醯胺酸,施行醯亞胺化後所獲得者 〇 馬來醯亞胺樹脂,最好具二官能基以上者,譬如!^州’-(4,4 ’ -二苯基甲烷)聯馬來醯亞胺、N,N ·-對苯聯馬來醯 亞胺、N,^ -鄰苯聯馬來醯亞胺、N,N ' - 2,6 -甲苯聯馬來 酸、N,N ’ -伸乙基聯馬來醯亞胺、N , N ’ -六亞甲基聯馬來 醯亞胺等。 本發明之黏著劑層中,在添加熱硬化樹脂硬化劑與硬 化促進劑上並無特別的限制。譬如可採用如二伸乙基三 胺、三伸乙基四胺等脂肪族聚胺;芳香族聚胺、三氟化 硼三乙胺錯體等脂肪族聚胺2 -烷基-4 ·甲基咪唑、2 -苯基 -4 -烷基咪唑等咪唑衍生物;酞酸酐、偏苯三酸酐等有機 酸;二氰化二醯胺、三苯膦、二氮雙環十一烯等習知化 合物。添加量係相對黏著劑100重量份,最好爲0.14 〇 重量份。 除上述成分之外,在不損及黏著劑特性範圍前提下, 於ί/L氧化劑、離子捕捉劑等有機、無機成份的添加, 並無任何限制。 -12- 594891 五、發明說明(11 ) 本發明之黏著劑層可含熱可塑性樹脂。熱可塑性樹脂 在控制軟化溫度上頗爲有效,且具有提昇黏著力、可撓 性、熱應力緩和、低吸水性的絕緣性等的功能。熱塑性 樹脂的添加量,最好爲黏著劑層的30〜60重量%,尤以 35〜55重量%爲佳。 熱塑性樹脂可舉例如丙烯腈-丁二烯共聚物(NBR )、丙 烯腈-丁二烯橡膠-苯乙烯樹脂(ABS )、苯乙烯-丁二烯-苯 乙烯樹脂(SEBS )、丙烯酸、聚乙烯縮丁醛樹脂、聚醯胺 、聚酯醯胺、聚酯、聚醯亞胺、聚醯胺醯亞胺、聚氨酯 等習知物。該等熱可塑性樹脂,亦可具有能與上述苯酚 樹脂、環氧樹脂等熱硬化樹脂反應的官能基。具體而言 ,如胺基、羧基、環氧基、氫氧基、羥甲基、異氰酸酯 基、乙烯基、矽烷醇基等。利用該等官能基,便可強化 與熱硬化性樹脂的鍵結,並可提昇耐熱性,故屬較佳狀 況。其中,就由與銅箔的黏著性、可撓性、絕緣性等觀 點,最好爲聚醯胺樹脂,但亦可採用各種化合物。特別 係就使黏著劑層擁有可撓性,且因低吸水率而絕緣佳等 方面言之,最好採用含有以碳數36之羧酸(所謂二聚酸) 爲必要成分的聚醯胺樹脂爲佳。更以採用屬聚醯胺樹脂 且胺價在1以上、3以下的聚醯胺樹脂爲更佳。含二聚酸 的聚醯胺樹脂,可依常法利用二聚酸與二胺的縮聚而獲 得,而此時除二聚酸之外,亦可含有己二酸、壬二酸、 癸二酸等二羧酸爲共聚成分。二胺係可採用如乙二胺、 594891 五、發明說明(12 ) 六亞甲基二胺、哌啶等習知物。就吸濕性、溶解性等觀 點而言,亦可混合二種以上。 在本發明中,聚醯胺樹脂的酸價係利用氫氧化鉀的滴 定量計算出。 即’量秤5g聚醯胺,並溶解於甲苯與正丁醇爲2 : 1的 溶劑50ml中。滴入數滴酚酞指示劑後,再以〇.1N氫氧 化鉀之甲醇溶液進行滴定。滴定上所需的氫氧化鉀量, 由下述式(1 )中計算酸價。 Av = (56.lX〇.lxFX(A-B))/50 …(1) Αν ··酸價 F :氫氧化鉀之鉀價* 1 A :滴定所需氫氧化鉀溶液的量(m 1 ) B :相當於空試驗中之A量(m 1 ) 其中所謂氫氧化鉀之鉀價係利用滴定酞酸氫鉀溶液, 而由下式(2)計算出。 F= 1000X0.5/(204.22X(V-b)X〇.l)…(2) V :滴定所需氫氧化鉀溶液的量(m 1 ) b :相當於空試驗中之b量(m 1 ) 僅依酸價小於3的聚醯胺樹脂所構成的黏著劑,在穿 孔加工性上將劣化。在本發明中,酸價3以上的聚醯胺 樹脂,相對黏著劑層整體量,最好在3重量%以上。此乃 屬影響穿孔加工性的因素。 在本發明中,聚醯胺樹脂含於黏著劑層中的比率,最 好在1〜90重量%範圍內。若低於1重量%,將產生柔軟性 -14- 五、發明說明(13) 的問題,有可能產生黏著劑層龜裂的顧慮。反之,若大 於9 0重量%,因爲絕緣性將惡化,導致可靠性降低。特 別以在2 0〜7 0重量%範圍內者爲佳。 硬化後之該黏著劑層的薄膜寬度方向(TD),於150°C下 的彈性率,最好爲IMPa〜5GPa,尤以2MPa〜lGPa爲佳,更 以5 0MPa〜lGPa爲更佳;且薄膜寬度方向(TD),於25〜1 50 °C下的線性膨脹係數,最好在10〜500ppm/°C範圍內,尤 以在20〜300ppni/°C範圍內爲更佳。此處所謂的彈性率, 係指利用動態黏彈性法所求得E1儲存彈性率),測量條 件則例示於實施例的評估方法(8 )中。彈性率若低於1 MPa ’因爲回流時的耐熱性將惡化,所以爲較差的狀況。反 之’若彈性率高於5GPa,則可撓性將嫌不足,同時電路 圖案形成後的彎曲情形將嚴重,所以亦爲較差的狀況。 另,高溫下彈性率較高,在打線接合用途的半導體連 接用基板中更相形重要。具體而言,一般打線接合溫度 的110〜200 °C便相當於此範圍。若將150t下之彈性率( 依動態黏彈性法所求得E ’)設定爲指標,並當作代表値的 §舌’最好在上述範圍內。 再者,硬化後之該黏著劑層的薄膜寬度方向(TD ),於 25°C下的彈性率最好在i〇MPa〜5GPa,尤以lOOMPa〜3GPa 範圍內者爲佳。若彈性率低於1 〇 Μ P a的話,則將產生穿 孔不佳,導致穿孔性降低,故爲較差的狀況。若彈性率 大於5GPa,則與銅箔的黏著力將降低,故亦非屬較佳狀 -15- 594891 五、發明說明(16 ) 層板。此時,亦可在貼合銅箔之前,便將附黏著劑膠帶 施行元件孔與傳動孔的穿孔處理。 (3 )半導體連接用基板之製造方法例 在(2 )所獲得的貼銅積層板銅箔的銅箔面上,依常法形 成光阻膜,然後施行蝕刻、光阻剝離、電解鑛金,並形 成銲錫光阻膜,而製成半導體連接用基板(圖案加工膠帶 )(請參閱第1圖)。 (4 )半導體裝置之製造方法例 首先,在(3 )之圖案加工膠帶上,採用環氧系晶片黏結 材料’黏著半導體積體電路(IC)。然後,再於n〇〜25(rc 下,於另一面上晶片黏結3秒鐘,配合需要,使晶片黏 結材料硬化。其次,於110〜20〇r、60〜110kHz條件下, 施行打線接合連接。最後,利用環氧系封裝樹脂施行封 裝’並經軟焊球連接程序,而獲得FP-BGA方式的半導體 裝置(請參閱第2圖)。另,晶片黏結材料亦可採用在具 備本發明要件的聚醯亞胺等絕緣性薄膜的雙面上,具 1 1 00 V m黏著劑層的附黏著劑膠帶◦此情況下,對圖案 加工膠帶上的壓接與1C壓接,最好在80〜200艽、0.5〜5 秒左右。此外,壓接後,配合需要,施行80〜3〇(rc、 1〜24小時的階段性加熱硬化處理,而使黏著劑硬化。 以下,所舉實施例說明本發明,惟本發明並不僅限於 此。在進入實施例的說明之前,先針對評估方法進行說 明。 -1 8-
594891 五、發明說明(17 ) (評估方法) (1)拉張彈性率 根據ASTM-D882進行測量。 (2 )線性膨脹係數 在容許自由收縮狀態下,將於3 0 01:下加熱3 0分鐘的 試驗片,裝置於TMA裝置上,於荷重2g、昇溫速度2〇°C /mi η條件下,讀取50°C〜200°C中的試驗片尺寸變化,並 依下式計算出。 線性膨脹係數(1/°C ) = (Ll/L0)/L0 ( 200 - 50 ) LO : 5 0°C時的試驗片長度(mm ) LI : 200°C時的試驗片長度(mm) (3 )熱收縮率 依下式計算出。 熱收縮率(%) = (L1 - L2) X 100/L1 L 1 :加熱前標點間的長度(mm ) L2 :加熱後標點間的長度(mm ) (4 )溼度膨脹係數 在荷重5g、溫度23。(:下,讀取5〜60%RH的試驗片尺寸 變化,並依下式計算出。 溼度膨脹係數(1 / %RH) = (L1 / LO) / L0(60-5) LO : 5%RH之試驗片長度(mm) LI : 60%RH之試驗片長度(mm) (5 )吸水率
594891 五、發明說明(18 ) 將絕緣性薄膜層,在2 3 °C下,浸漬於水中2 4小時後, 測量浸漬前後之絕緣性薄膜層的重量變化,並依下式計 算出。 吸水率(%) =(浸漬後重量-浸漬前重量}/浸漬前重量 (6 )熱傳率 熱傳率的計算,係採用下式。 熱傳率(W/m_k) =熱擴散率(m2/s) X熱容量(J/m3K) 熱擴散率係切出直徑約1 Omm厚度50 // m的圓板狀試料 ,並濺鍍上白金而被覆雙面後,在將噴碳在雙面上塗佈 約1 // m左右,使表面黑化,並於1 5 〇 X:下依雷射閃光法 進行測量。 熱容量係計算出密度與熱的乘積,而密度則在23°C下 ,利用阿基米德法測得。另,比熱係依DSC (示差掃描熱 量計),於昇溫速度1 0 °C / m i η下施行測量,並採用1 5 0。匚 下的測量値。 (7 )水蒸氣穿透率 根據ASTM-D50,依38°C /9 0%RH、2 4h條件,進行測量 〇 (8 )黏著劑的彈性率 將黏著劑單膜疊層上約200 // m,於開放大氣環境下, 依序施行80°C、4小時、l〇〇°c、5小時、160°C、4小時 的加熱硬化處理,而獲得硬化後的黏著劑單膜。將其利 用動態黏彈性法,測量隨溫度的E 1 (儲存彈性率)變化。 -20- 五、發明說明(2〇) 小時、1 0 0 °c、5小時、1 6 0 °C、4小時的加熱硬化處理, 而獲得銅箔附黏著劑膠帶。 然後’依常法施行光阻膜形成、蝕刻、光阻剝離、電 解鍍金’並形成銲錫光阻膜,而製成鎳電鍍厚3 A πι、金 電鑛厚1 M m的半導體連接用基板(圖案加工膠帶)(請參 閱第1圖)。 (12) 半導體裝置之製作 在(Π )所製成的圖案加工膠帶上,採用環氧系晶片黏 結材料(琳得科(股)製(音譯)、「LE- 5000」),壓接20mm 小塊的I C,於此狀態下,在1 6 0 °C下施行3 0分鐘的加熱 硬化。其次,將1C與配線基板,在於150°C、110kHz條 件下’依金絲線施行打線接合後,再施行樹脂封裝。最 後’將軟焊球利用回流搭載上,而獲得評估用的半導體 裝置。 (13) 製作附有銅箔彎曲用樣品與彎曲評估方法 在附黏著劑膠帶上,將1 8 // hi的電解銅箔,於1 4(TC、 3〇N/cm、im/min條件下,施行層合。接著,將樣品切割 成寬度35mm X 200mm,於開放大氣環境下,依序施行80T: 、4小時、i〇〇°C、5小時、160°C、4小時的加熱硬化處 理,而獲得彎曲評估用樣品。彎曲的測量係根據SEM I -G76 - 0299,於23°C、55%RH下,施行24小時調濕後,按 壓樣品一邊,利用卡尺測量經按壓而翹起樣品的相反側 高度,並當作彎曲量(將銅箔往上翹的情況設定爲正)。 -22- 594891 五、發明說明(21 ) (1 4 )形成電路圖案狀態下的彎曲評估方法 在(1 3 )所製成的彎曲評估用樣品銅箔面上,依常法施 行光阻膜形成、蝕刻、光阻剝脫、電解鍍金,並當作評 估用樣品。當將黏接劑面積設定爲1 0 0時之導體部分的 面積(殘留率)爲3 0。彎曲的測量係如同(1 3 )。 (1 5 )尺寸變化率的評估方法 在附黏著劑膠帶上,施行傳動孔、元件孔等穿孔處理 。在此膠帶上取任意二點A、B,測量AB間的距離(L0 )。 接著,利用(1 1 )的方法,製成圖案加工膠帶,並測量AB 間的距離(L)。尺寸變化率係依下式求得。尺寸變化率 ={(LO-L)/LO} X 100 (1 6 )打線接合性(WB性、拉拔強度) 在半導體裝置用黏著劑薄片樣品上,將1 8 V m電解銅 箔,於1 3 5 °C、0 _ 1 MP a條件下施行層合。接著,在開放 大氣ί哀境下’依序施fj於8 0 °C下3小時、1 〇 〇下5小時 、1 5 0 °C下5小時的加熱處理,而製成附有銅箔半導體裝 置用黏著劑薄片。在所獲得附有銅箔半導體裝置用黏著 劑薄片的銅箔面上’貼上2mm寬度的保護膠帶後,再施 行蝕刻、保護膠帶的剝脫,然後鎳電鍍上厚度1 # m,接 著再電解鍍金厚度0 · 5 // ιη。於所製成的樣品上,將金絲 線,依以下條件進行焊接。 金絲線直徑 超苜波頻率 1 1 0 Κ Η z
•23- 594891 五、發明說明(22 ) 焊接溫度 1 5 0 t: 然後’採用推挽液位指示計,測量金線與樣品的拉拔 強度。拉拔強度雖越高越佳,但若在以下的話,則因 爲將於溫度循環試驗中,產生多起斷線不良的情況,所 以最好大於7g (1 7 )穿孔加工性 將保護薄膜/黏著劑層/有機絕緣薄膜構造的半導體裝 置用黏者劑薄膜樣品,由保護薄膜端,採用模具,鏊開 圓形(0 · 3關0 )的孔。其次,去除保護薄膜後,觀察孔周 圍的黏著劑層樣子。當黏著劑層產生龜裂、或由有機絕 緣薄膜產生剝脫的情況視爲不良狀況。 (1 8 )軟焊耐熱性
採用5個在(1 2 )中所製得的評估用半導體裝置,於8 5 °C /8 5%RH下,加濕12小時後,於最高溫度240°C的IR 回流爐中進行加熱處理,並調查封裝體的膨脹產生個數 〇 以下雖舉實施例說明本發明,惟本發明並不僅限於該 等實施例。另,除本實施例中所採用的聚醯胺樹脂、聚 醯亞胺底層薄膜係採用市售品之外,其餘採用依下示方 法所製成者。 參考例1 (聚醯胺樹脂之合成) 採用二聚酸(油尼給馬公司音譯)製「PRIPOL1 009」)及己 二酸爲酸成分,採用六亞甲基二胺爲胺成分。在該等酸/胺 -24- 594891
五、發明說明(25 ) ’依上述評估方法(11 )〜(1 6 )中所示方法,製成圖案加工 膠帶、半導體裝置,並進行評估。結果如表3中所示。 實施例11
在N,N 一甲基乙醯胺中’溶解(3 -胺基丙基)四甲基二 砂氧J兀9 0份、對苯二胺1 〇份、3,3 1,4 , 4、二苯甲酮四 殘酸野1 〇 〇份,而獲得聚醯胺酸溶液。將此溶液,在實 施例1所示底層薄膜上,利用棒塗機,依乾燥後厚度形 成乾燥後厚度爲8 // m的方式,在80〜150°C下進行乾燥後 ,再於2 5 0 °C下施行3 0分鐘的加熱處理,而獲得附黏著 劑膠帶。 另’採用參考例2所製成的聚醯亞胺薄膜a,作爲底層 薄膜。 再者,在此附黏著劑膠帶上,於2 3 0 °C、1 ON / c m、
1 m / m i η條件下’層合上1 8 μ m的電解銅箔(三井金屬(股) 產製FQ - VLP箔),接著於非活性氣體環境的烤箱中,依 序施行1 〇〇°C、4小時、160°C、4小時、270°C、2小時 的加熱硬化處理,而獲得附有銅箔黏著劑膠帶。然後, 依常法施行光阻膜形成、蝕刻、光阻剝脫、電解鍍金、 銲錫光阻膜形成,而製成鎳電鑛厚度3 // m、金電鍍厚度 1 // m的半導體連接用基板(圖案加工膠帶)(請參閱第1圖) 。所獲得圖案加工膠帶特性,如表3中所示。 另,採用所製成的圖案加工膠帶,依照上述評估方法 (1 2 ),獲得評估用半導體裝置。所獲得半導體裝置的特 -27- 594891 五、發明說明(27 ) 2 5 m之聚對苯二甲酸乙二醇酯(東菱(股)產製的「魯密 拉」(音譯)上,依形成約1 8 // πι乾燥厚度的方式進行塗 佈,並施行1 〇 〇 °C、1分鐘,及16 0 °C、5分鐘的乾燥處 理’而製成黏著劑薄片。 再將所製得黏著劑薄片,在參考例2中所製得聚醯亞 胺薄膜A上,於相同條件下,將黏著劑薄片進行層合, 而製成附黏著劑膠帶。所獲得附黏著劑膠帶的特性,如 表3中所示。其次,依上述方法,製成圖案加工膠帶、 半導體裝置,並進行評估。結果如表3中所示。 由表3實施例與比較例之結果得知,利用本發明所獲 得的半導體用附黏著劑膠帶,即便在附加銅箔、電路圖 案形成後的任一情況下,均可減少彎曲現象,且同時具 優越的打線接合性及穿孔性。另,可將較低尺寸的安定 性與半導體裝置形成後的拉拔強度,維持於較高狀態, 並且具優越的軟焊耐熱性。 【產業可利用性】 本發明係提供半導體積體電路裝接時所使用之如卷帶自 動接合(TAB )方式之圖案加工膠帶、球格式陣列(BGA )封裝 用插入板等半導體連接用基板、晶粒黏接材料、導線架固 定膠帶、LOC膠帶、多層基板之層間黏接片等採用薄膜狀 黏著劑而製造半導體裝置的附黏著劑膠帶、及使用其之貼 銅積層板、半導體連接用基板及半導體裝置。藉由本發明 可提升高密度封裝用半導體裝置的可靠性。 -29- 594891 五、發明說明(28 )
-30- 594891 5·、發明說明(29 ) 表2 黏著劑組成 實施例 报類 1 2 3 4 5 6 7 8 9 1 0 丨·1 1 1 2 聚醯胺 ] 30 30 30 30 30 30 30 30 45 35 D 45 I ΙΟ 10 10 10 10 10 10 10 IV 環氧樹脂 I D 0.5 I0.0 1 5 5 5 5 5 5 5 5 IV 15 15 15 15 15 15 15 15 V VI 10.0 νπ 苯酚樹脂 1 40 40 40 40 40 40 40 40 n 15 1 25 IV 10 V 65 VI 15 - νπ 15 m 硬化促進劑 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 j I 表3 底層薄膜特性; | 種類 ; A B C D E F 6 H A A A A I 厚度[/im] 50 50 50 50 50 . 50 50 50 50 50 50 50 線性膨脹係數【ppm/t] (ppm/ec) MD 16 U 12 10 9 21 19 18 16 16 16 16 TD 21 18 17 17 17 25 23 25 21 21 21 21 TD-MD 5 4 5 7 8 4 4 7 5 5 5 5 拉張弾性率[MPb] TD 7.9 8.0 9.6 7.4 9.4 6.5 B,5. 6.5 7.9 7.9 7.9 7.9 熱收縮率[%] TD 0.01 0.03 0.05 0.05 0.06 0.01 0.00 0.01 0.01 0.01 0.01 0.01 溼度膨脹係數[PPHl/°C] TD 8.3 8.5 9.2 9.2 8.5 8.3 8.3 8.5 8.5 8.5 8.5 fl.5 吸水率 [%] TD 1.4 U 1.4 1.5 1.3 1.3 1.4 1.3 1.4 1.4 1.4 U 熱傳率[W/m · K] 0.28 0.28 0.30 0.26 0.29 0.28 0.30 0.31 0.28 0.28 0.28 0.28 水蒸氣萝透率[g/m2/24h] 0.04 0.05 0.05 0.06 0.04 0.06 0.05 0.05 0.04 0.04 0.04 0.04 j 黏著劑物性 ; 1 濁度 3 3 3 3 3 3 3 3 37 19 10 50 | 彈性率[MPa J 25°C, 110Hz 1100 1100 1100 1100 1100 1100 1100 1100 300 1050 4000 2500 150°C, 110Hz 135 135 135 135 135 135 135 135 60 10 900 85 j 線性膨脹係數丨ppWC] 105 105 105 105 105 105 105 105 100 no 20 75 | 樣品特性 ; 1 附銅箔彎曲[mml 2.8 2.5 2.4 2.9 3.0 2.3 2.0 2.0 3.0 3.0 3.2 2.9 | 焊接彎曲[mml 1.0 1.5 1.2 1.5 1.5 1.3 1.0 1.0 U 2.1 ‘2.5 1.8 ] 尺寸變化率[%] 0.02 0.05 0.06 0.05 0.02 0.03 0.03 0.04 0.03 0.05 0.06 0.03 j 打線接合性Μ 金樣径0.25刪(X) 9.5 9.0 9.0 9.5 8.5 9.0 8.5 8.8 8.0 8.0 &.5 8.0 j 金拢径0.25_ (σ) 0.2 0.1 0.2 0.2 0:2 0.1 0.3 0.2 0.6 0.8 0.3 0.6 | 穿孔加工性 良好 良好 良好 良好 良好 良好 良好 良好 良好 不良 良好 不良| 軟焊耐熱性(不良比率) 0/5 0/5 0/5 0/5 0/5 0/5 0/5 0/5 0/5 0/5 0/5 〇/T| - 31 - 594891 五、發明說明(3〇) 表2(續1) 黏著劑組成 • m 13 1 4 15 16 17 1 8 19 20 2 1; 22 23 2 4 聚醯胺 ] 30 30 30 30 30 30 30 30 D 40 I 10 10 10 10 10 10 10 10 40 IV 40 環氧樹脂 1 H 19.7 19.7 19.7 H 5 5 5 5 5 5 5 5 IV 15 15 15 15 15 15 15 15 V VI VD . 苯酚樹脂 I 40 40 40 40 40 40 40 40 40 40 40 B 1 IV V VI VD 1 硬化促進劑 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 表3 表3(續1) 底層薄膜特性 ; 1 種類. , A 1 J K L Μ Ν 0 Ρ A A A I 厚度丨 50 60 55 50 50 50 50 20 50 50 50 50 | 線性膨脹係數IPP^C] MD 16 19 19 15 13 21 14 14 16 16 16 16 (ppm/°C) TD 21 22 21 20 18 26 17 17 19 21 21 21 TD-MD 5 3 2 5 5 5 3 3 3 5 5 5 拉張彈性率【MPa] TD 19 7.1 6.7 9.7 6.0 6.2 6.1 11.0 6.0 7.9 7.9 7.9 i 熱收縮率【%] TD 0.01 0.01 0.00 0.25 0.04 0.04 0,09 0.10 0.03 0.01 0.01 0.01 { 溼度膨脹係數【PPm/°C] TD 8.5 8.8 8.8 8.3 15.0 8.9 16.0 10.0 2.0 8.5 8.5 8.5 { 吸水奉 m TD 1.4 1.4 1.5 1.4 1.6 1.4 1.9 0.5 0.1 1.4 U 1.4 j 熱傳率[W/m · K] 0.28 0.30 0.32 0.27 0.29 0.30 0.18 0.15 0.65 0.28 0.28 0.28 水蒸氣穿透率U/m2W4h] 0.04 0.05 0.05 0.04 0.07 0.06 0.73 0.02 0.01 0.04 0.04 0.04 黏著劑物性 i 濁度 15 3 3 3 3 3 3 3 3 17 18 18 彈1生率[Mp 8】 25eC, 110H2 800 '1100 1100 1100 1100 1100 1100 1100 1100 990 1060 1000 150°C, 110Hz 15 135 135 135 135 135 135 135 135 90 105 125 線性膨脹係數iDPm/n 250 105 105 105 105 105 105 105 105 100 63 72 樣品特性 i 附銅箔彎曲imm] 3.0 2.0 5.0 6.1 3.8 3.5 4.5 3.5 3.1 2.1 1.6 2.6 焊接彎曲· 2.0 0.8 3.0 个2 3.5 3.2 4.5 2.5 1.5 1.0 1.2 1.2 尺寸變化率Μ 0.06 0.04 0.30 0.11 0.08 0.05 0.09 0.05 0.05 0.04 0.03 0.06 1 :打線接合性u] 金轹柽0.25丨抓(X) 7.2 9.0 7.6 7.4 9.5 9.0 8.5 8.8 9.3 8.5 10.5 10.0 1 金絳径0.25咖(σ) 0.7 0.3 0.4 0.5 0.3 0.1 0.1 0.2 0.2 0.3 .0.4 0.3 1 穿孔加工性 良好 良好 ‘良好 良好 良好 良好 •良好 良好 良好 良好 良好 良 軟焊耐熱性(不良比率) 0/5 0/5 0/5 0/5 0/5 0/5 3/5 3/5 5/5 0/5 0/5 0/5 '1 -32- 594891 五、發明說明(31 ) 表2(|買2) 黏著劑組成 :施例 比_ 比_ \m - 25 26 27 2 8 29 30 1 2 3 4 i 5 6 7 聚醯胺 I 30 30 30 30 30 30 30 30 40 40 30 30 B 10 10 ID 10 10 IV 10 10 10 10 10 10 40 '環氧樹脂 I 19.7 19.7 B 19.7 19.7 19.7 ID 19.7 5 5 5 5 IV 19.7 14.7 14.7 14.7 15 15 V 5 19.7 VI VD 苯酚樹脂 I 40 40 40 40 40 40 40 40 40 40 40 40 40 B l N V VI m VD 硬化促進劑 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 .0.3 0.3 0.3 0.3 0.3 *3_^_表 3(續 2) 底層薄膜特性 1 種類 ; A A A A A A 0 R 0 Q Q 0 S 厚度kml 50 50 50 50 50 50 50 50 50 50 50 50 75 線性膨脹係數【_/句 (ppm/°C) MD 16 16 16 16 16 16 13 26 13 13 13 13 19 TD 21 21 21 21 21 21 14 26 14 14 14 14 22 TD-MD 5 5 5 5 5 5 1 0 1 1 1 1 3 拉張彈性率[ΜΡβ] TD ' 7.9 7.9 7.9 7.9 7.9 7.9 8.6 3.1 8.6 8.6 8.6 8.6 7.1 熱收縮率[%] TD 0.01 0.01 0.01 0.01 0.01 0.01 0.04 0.00 0.04 0.04 0.04 0.04 0.01 溼度膨脹係數 TD 8.5 8.5 8.5 8.5 8.5 8.5 8.3 25.0 8.3 8.3 8.3 '8.3 8.8 吸水率 [%] TD 1.4 1.4 1.4 1.4 1.4 1.4 1.6 2.9 1.6 1.6 U 1.6 1.4 熱傳率[W/m-K] 0.28 0.28 0.28 0.28 0.28 0.28 0.32 0.18 0.32 0.32 0.32 0.32 0.30 水蒸氣穿透率 0.04 0.04 0.04 0.04 0.04 0.04 0.04 1.13 0.04 0.04 0.04 0.04 0.05 黏著劑物性 ; 濁度 10 18 0 1 3 6 3 3 38 25 40 30 18 彈性率【ΜΡβ】 25°C、110Hz 1050 1250 1360 1550 1200 1000 1100 1100 100 150 300 350 400 150°C. 110Hz 135 137 140 135 131 108 135 135 4 9 22 30 45 線性膨脹係數U 80 65 B1 75 69 95 105 105 506 320 200 210 103 •樣品特性 ; 附銅箔彎曲Umi 1.9 2.6 2.1 2.0 2.5 2.5 5.0 7.0 6.2 7.4 5.7 7.8 2.0 .焊接彎曲 1.2 1.5 1.1 1.2 U U 4.5 4.5 5.3 6.3 4.5 6.5 1.0 尺寸變化率h<0 0.04 0.05 0.02 0.05 0.03 0.07 0.05 0,05 0.20 0.30 0.15 0.20 0.02 打線接合性U] 金眯柽0.25晒(X) 11.0 11.5 12.0 10.0 8.7 D.5 7.0 7.0 2.0 4.5 5.2 5.0 9..0 金眯径0·25ιιη (σ) 0.4 0.3 0.3 0.3 0.2 0.3 0.8 1.0 0.5 0.6 0.8 0.7 0.5 穿孔加工性 良好 良好 良好 良好 良好 良好 良好 良好 不良 不良 不良 良好 不良 軟焊耐熱性(不良比率) 0/5 0/5 0/5 0/5 0/5 0/5 1/5 4/5 0/5 1/5 1/5 0/5 0/5 -33-
Claims (1)
- 594891 年片 η 修.正 利範圍 第9 0 1 20 5 9 8號「半導體基板用附黏著劑膠帶、及使用其 之貼銅積層板」專利案 (93年1月5日修正本) 六、申請專利範圍: 1 · 一種半導體用附黏著劑膠帶,其特徵在於:係由具下述 (1 )、( 2 )特性以聚醯亞胺樹脂爲主成分的厚度爲丨〇至 6 5 // m之絕緣性薄膜層、含有選自環氧樹脂、苯酚樹脂 、聚醯亞胺樹脂、馬來醯亞胺樹脂中至少一種之熱硬化 樹脂之與1層以上的半硬化狀態黏著劑層之層合體所構 成; (1) 50至200°C中薄膜寬度方向(TD)之線性膨脹係數爲 17 至 30ppm/°C ; (2) 拉張彈性係數爲6〜120?&。 2 .如申請專利範圍第1項之半導體用附黏著劑膠帶,其中 絕緣性薄膜層的薄膜寬度方向(TD )與長度方向(MD )之線 性膨脹係數差爲3至1 Oppm / °C。 3 .如申請專利範圍第1項之半導體用附黏著劑膠帶,其中 該黏著劑層係包含選自聚醯胺、丙烯腈-丁二烯共聚物 (NBR )、聚酯、聚胺酯中至少一種之熱可塑性樹脂及熱 硬化樹脂。 4 .如申請專利範圍第1項之半導體用附黏著劑膠帶,其中 該黏著劑層係包含至少一種酸價3以上聚醯胺樹脂及環 氧樹脂。 5 . —種貼銅積層板,係採用申請專利範圍第1項之半導體 594891 t、申請專利範圍 用附黏著劑膠帶。 6 . —種半導體連接用基板,係採用申請專利範圍第1項之 半導體用附黏著劑膠帶。
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US5739263A (en) * | 1992-06-04 | 1998-04-14 | Sumitomo Bakelite Company Limited | Film adhesive and process for production thereof |
US5406124A (en) * | 1992-12-04 | 1995-04-11 | Mitsui Toatsu Chemicals, Inc. | Insulating adhesive tape, and lead frame and semiconductor device employing the tape |
JP2923170B2 (ja) * | 1993-05-26 | 1999-07-26 | 日立電線株式会社 | 打抜き性に優れたフィルム及びこれを用いたリードフレーム |
JPH07278258A (ja) * | 1994-04-11 | 1995-10-24 | Hitachi Chem Co Ltd | 熱硬化性樹脂組成物、接着剤シート、接着剤付き金属はく、ポリイミドフィルム及び金属はく張りポリイミドフィルム |
JPH08174659A (ja) | 1994-12-22 | 1996-07-09 | Kanegafuchi Chem Ind Co Ltd | Tab用テープの製造方法 |
JP2968704B2 (ja) | 1995-06-08 | 1999-11-02 | 日本電気株式会社 | 半導体装置 |
TW340967B (en) * | 1996-02-19 | 1998-09-21 | Toray Industries | An adhesive sheet for a semiconductor to connect with a substrate, and adhesive sticking tape for tab, an adhesive sticking tape for wire bonding connection, a substrate for connecting with a semiconductor and a semiconductor device |
JP3555381B2 (ja) | 1996-04-02 | 2004-08-18 | 東レ株式会社 | 半導体装置用接着剤付きテープおよびそれを用いた銅張り積層板、半導体接続用基板ならびに半導体装置 |
JPH10138318A (ja) * | 1996-09-13 | 1998-05-26 | Ube Ind Ltd | 多層押出しポリイミドフィルムの製法 |
JPH10178054A (ja) | 1996-10-15 | 1998-06-30 | Toray Ind Inc | 半導体集積回路接続用基板およびそれを構成する部品ならびに半導体装置 |
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JP3347651B2 (ja) | 1997-09-17 | 2002-11-20 | 株式会社巴川製紙所 | 電子部品用接着テープ |
US6031068A (en) * | 1997-10-23 | 2000-02-29 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Polyimide composition and base tape for TAB carrier tape and flexible printed circuit board made from said composition |
JPH11233567A (ja) | 1998-02-12 | 1999-08-27 | Toray Ind Inc | 半導体装置用接着剤付きテープおよびそれを用いた銅張り積層板、半導体接続用基板ならびに半導体装置 |
JP3346265B2 (ja) * | 1998-02-27 | 2002-11-18 | 宇部興産株式会社 | 芳香族ポリイミドフィルムおよびその積層体 |
JP3580128B2 (ja) * | 1998-04-17 | 2004-10-20 | 宇部興産株式会社 | 金属箔積層フィルムの製法 |
JP3531719B2 (ja) * | 1998-10-21 | 2004-05-31 | 宇部興産株式会社 | ポリイミド樹脂成形体の製造法 |
JP3587291B2 (ja) * | 1998-12-01 | 2004-11-10 | 株式会社カネカ | Tab用テープ |
JP3815911B2 (ja) * | 1999-01-11 | 2006-08-30 | 宇部興産株式会社 | フィルムキャリアテ−プ |
JP3815912B2 (ja) * | 1999-01-11 | 2006-08-30 | 宇部興産株式会社 | Loc用テ−プ |
JP2002050718A (ja) * | 2000-08-04 | 2002-02-15 | Hitachi Ltd | 半導体装置 |
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2000
- 2000-08-25 JP JP2000255352A patent/JP4665298B2/ja not_active Expired - Lifetime
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- 2001-08-22 TW TW090120598A patent/TW594891B/zh not_active IP Right Cessation
- 2001-08-22 US US10/111,302 patent/US6982484B2/en not_active Expired - Fee Related
- 2001-08-22 EP EP01958398A patent/EP1249863B1/en not_active Expired - Lifetime
- 2001-08-22 WO PCT/JP2001/007183 patent/WO2002017379A1/ja active IP Right Grant
- 2001-08-22 DE DE60131725T patent/DE60131725T2/de not_active Expired - Fee Related
- 2001-08-22 CN CNB018031447A patent/CN1204611C/zh not_active Expired - Fee Related
- 2001-08-22 KR KR1020027005242A patent/KR100602537B1/ko active IP Right Grant
- 2001-08-22 AT AT01958398T patent/ATE380393T1/de not_active IP Right Cessation
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- 2003-05-20 HK HK03103570A patent/HK1051441A1/xx not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8123111B2 (en) | 2005-03-29 | 2012-02-28 | Showa Denko K.K. | Production method of solder circuit board |
US8109432B2 (en) | 2005-07-11 | 2012-02-07 | Showa Denko K.K. | Method for attachment of solder powder to electronic circuit board and solder-attached electronic circuit board |
Also Published As
Publication number | Publication date |
---|---|
KR100602537B1 (ko) | 2006-07-20 |
US20030031867A1 (en) | 2003-02-13 |
WO2002017379A1 (fr) | 2002-02-28 |
JP4665298B2 (ja) | 2011-04-06 |
JP2002076062A (ja) | 2002-03-15 |
CN1393033A (zh) | 2003-01-22 |
KR20020044569A (ko) | 2002-06-15 |
EP1249863A8 (en) | 2003-01-15 |
ATE380393T1 (de) | 2007-12-15 |
EP1249863A1 (en) | 2002-10-16 |
US6982484B2 (en) | 2006-01-03 |
EP1249863A4 (en) | 2005-03-16 |
DE60131725D1 (de) | 2008-01-17 |
CN1204611C (zh) | 2005-06-01 |
HK1051441A1 (en) | 2003-08-01 |
DE60131725T2 (de) | 2008-11-06 |
EP1249863B1 (en) | 2007-12-05 |
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