TW589681B - Etching method and apparatus - Google Patents
Etching method and apparatus Download PDFInfo
- Publication number
- TW589681B TW589681B TW091133466A TW91133466A TW589681B TW 589681 B TW589681 B TW 589681B TW 091133466 A TW091133466 A TW 091133466A TW 91133466 A TW91133466 A TW 91133466A TW 589681 B TW589681 B TW 589681B
- Authority
- TW
- Taiwan
- Prior art keywords
- particle beam
- electrode
- neutral particle
- processing layer
- etching
- Prior art date
Links
- 238000005530 etching Methods 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims description 79
- 239000002245 particle Substances 0.000 claims abstract description 119
- 230000007935 neutral effect Effects 0.000 claims abstract description 77
- 238000012545 processing Methods 0.000 claims abstract description 75
- 150000002500 ions Chemical class 0.000 claims abstract description 29
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 5
- 230000001681 protective effect Effects 0.000 claims description 31
- 238000006243 chemical reaction Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 238000010884 ion-beam technique Methods 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 46
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 19
- 229910052731 fluorine Inorganic materials 0.000 description 9
- 125000001153 fluoro group Chemical group F* 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000001788 irregular Effects 0.000 description 6
- 239000004575 stone Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229920006254 polymer film Polymers 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010893 electron trap Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- -1 CF2 + Chemical class 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 241000238631 Hexapoda Species 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- VPAYJEUHKVESSD-UHFFFAOYSA-N trifluoroiodomethane Chemical compound FC(F)(F)I VPAYJEUHKVESSD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001353809A JP4073204B2 (ja) | 2001-11-19 | 2001-11-19 | エッチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200300579A TW200300579A (en) | 2003-06-01 |
| TW589681B true TW589681B (en) | 2004-06-01 |
Family
ID=19165758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091133466A TW589681B (en) | 2001-11-19 | 2002-11-15 | Etching method and apparatus |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7144520B2 (enExample) |
| JP (1) | JP4073204B2 (enExample) |
| TW (1) | TW589681B (enExample) |
| WO (1) | WO2003044842A1 (enExample) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10317027A1 (de) * | 2003-04-11 | 2004-11-11 | Leybold Optics Gmbh | Hochfrequenz-Plasmastrahlquelle und Verfahren zum Bestrahlen einer Oberfläche |
| JP2006049817A (ja) * | 2004-07-07 | 2006-02-16 | Showa Denko Kk | プラズマ処理方法およびプラズマエッチング方法 |
| EP1630849B1 (en) * | 2004-08-27 | 2011-11-02 | Fei Company | Localized plasma processing |
| KR100851901B1 (ko) * | 2005-01-07 | 2008-08-13 | 삼성전자주식회사 | 이온 빔 추출장치 |
| KR100714898B1 (ko) * | 2005-01-21 | 2007-05-04 | 삼성전자주식회사 | 중성빔을 이용한 기판 처리장치 및 처리방법 |
| KR100610665B1 (ko) | 2005-02-03 | 2006-08-09 | 삼성전자주식회사 | 중성빔을 이용한 식각장치 |
| US7358484B2 (en) * | 2005-09-29 | 2008-04-15 | Tokyo Electron Limited | Hyperthermal neutral beam source and method of operating |
| US7335602B2 (en) * | 2006-01-18 | 2008-02-26 | Freescale Semiconductor, Inc. | Charge-free layer by layer etching of dielectrics |
| US20080169064A1 (en) * | 2007-01-11 | 2008-07-17 | Ushio Denki Kabushiki Kaisha | Surface-treating apparatus |
| KR20080096771A (ko) | 2007-02-09 | 2008-11-03 | 캐논 아네르바 가부시키가이샤 | 산화 처리 방법 및 산화 처리 장치 |
| US20090013527A1 (en) * | 2007-07-11 | 2009-01-15 | International Business Machines Corporation | Collapsable connection mold repair method utilizing femtosecond laser pulse lengths |
| KR100898589B1 (ko) * | 2007-08-13 | 2009-05-20 | 주식회사 하이닉스반도체 | 반도체 소자 제조 방법 |
| US8614151B2 (en) * | 2008-01-04 | 2013-12-24 | Micron Technology, Inc. | Method of etching a high aspect ratio contact |
| JP2010228066A (ja) * | 2009-03-27 | 2010-10-14 | Kyushu Univ | ナノドットの作製方法 |
| US20110177694A1 (en) * | 2010-01-15 | 2011-07-21 | Tokyo Electron Limited | Switchable Neutral Beam Source |
| US8828883B2 (en) | 2010-08-24 | 2014-09-09 | Micron Technology, Inc. | Methods and apparatuses for energetic neutral flux generation for processing a substrate |
| FR2965697B1 (fr) * | 2010-09-30 | 2014-01-03 | Astrium Sas | Procede et dispositif pour la formation d'un faisceau plasma. |
| US9105705B2 (en) * | 2011-03-14 | 2015-08-11 | Plasma-Therm Llc | Method and apparatus for plasma dicing a semi-conductor wafer |
| CN102332384A (zh) * | 2011-09-26 | 2012-01-25 | 中国科学院微电子研究所 | 产生中性粒子束装置及方法 |
| US9048190B2 (en) * | 2012-10-09 | 2015-06-02 | Applied Materials, Inc. | Methods and apparatus for processing substrates using an ion shield |
| KR101661638B1 (ko) * | 2012-11-02 | 2016-09-30 | 캐논 아네르바 가부시키가이샤 | 반도체 장치의 제조 방법, 이온빔 에칭 장치 및 제어 장치 |
| US9978568B2 (en) | 2013-08-12 | 2018-05-22 | Tokyo Electron Limited | Self-sustained non-ambipolar direct current (DC) plasma at low power |
| KR101579506B1 (ko) * | 2014-07-08 | 2015-12-23 | 피에스케이 주식회사 | 기판 처리 장치 및 그 파티클 취급 방법 |
| US20160013020A1 (en) * | 2014-07-14 | 2016-01-14 | Lam Research Corporation | Systems and methods for producing energetic neutrals |
| US10475626B2 (en) * | 2015-03-17 | 2019-11-12 | Applied Materials, Inc. | Ion-ion plasma atomic layer etch process and reactor |
| US9960089B2 (en) * | 2015-04-03 | 2018-05-01 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for endpoint detection |
| DE102016220248A1 (de) * | 2016-10-17 | 2018-04-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung und verfahren zum anisotropen drie-ätzen mit fluorgasmischung |
| JP6790731B2 (ja) * | 2016-11-01 | 2020-11-25 | 東洋製罐グループホールディングス株式会社 | ダイヤモンド膜表面に微細周期構造溝を形成する方法 |
| CN107331593B (zh) * | 2017-08-11 | 2018-10-12 | 大连理工大学 | 一种基于射频放电的正负离子源 |
| JP7323476B2 (ja) * | 2020-02-19 | 2023-08-08 | 住友電気工業株式会社 | 半導体装置の製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4523971A (en) * | 1984-06-28 | 1985-06-18 | International Business Machines Corporation | Programmable ion beam patterning system |
| DE4039930A1 (de) * | 1990-12-14 | 1992-06-17 | Leybold Ag | Vorrichtung fuer plasmabehandlung |
| JPH0775230B2 (ja) | 1991-09-24 | 1995-08-09 | 株式会社小電力高速通信研究所 | プラズマエッチング終点モニタリング方法 |
| US5462629A (en) * | 1992-08-28 | 1995-10-31 | Kawasaki Steel Corp. | Surface processing apparatus using neutral beam |
| DE4241045C1 (de) * | 1992-12-05 | 1994-05-26 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silicium |
| US6054395A (en) * | 1997-10-24 | 2000-04-25 | Micron Technology, Inc. | Method of patterning a semiconductor device |
| US6641747B1 (en) * | 2001-02-15 | 2003-11-04 | Advanced Micro Devices, Inc. | Method and apparatus for determining an etch endpoint |
| JP4039834B2 (ja) * | 2001-09-28 | 2008-01-30 | 株式会社荏原製作所 | エッチング方法及びエッチング装置 |
-
2001
- 2001-11-19 JP JP2001353809A patent/JP4073204B2/ja not_active Expired - Lifetime
-
2002
- 2002-11-08 WO PCT/JP2002/011658 patent/WO2003044842A1/en not_active Ceased
- 2002-11-08 US US10/493,414 patent/US7144520B2/en not_active Expired - Fee Related
- 2002-11-15 TW TW091133466A patent/TW589681B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US7144520B2 (en) | 2006-12-05 |
| TW200300579A (en) | 2003-06-01 |
| WO2003044842A1 (en) | 2003-05-30 |
| JP4073204B2 (ja) | 2008-04-09 |
| JP2003158099A (ja) | 2003-05-30 |
| US20040244687A1 (en) | 2004-12-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW589681B (en) | Etching method and apparatus | |
| US7314574B2 (en) | Etching method and apparatus | |
| US7473377B2 (en) | Plasma processing method | |
| JP3574680B2 (ja) | キセノンを用いたプラズマエッチング | |
| US6926799B2 (en) | Etching apparatus using neutral beam | |
| KR100281241B1 (ko) | 파라데이 상자의 윗면의 격자면을 변화시켜 플라즈마 식각을하는 방법 | |
| KR100515424B1 (ko) | 다양한기판의이방성플라즈마에칭방법 | |
| US7034285B2 (en) | Beam source and beam processing apparatus | |
| JPS6130036A (ja) | マイクロ波プラズマ処理装置 | |
| JP2003158099A5 (enExample) | ||
| US5468339A (en) | Plasma etch process | |
| US5318654A (en) | Apparatus for cleaning a substrate with metastable helium | |
| US20250022689A1 (en) | Gas cluster assisted plasma processing | |
| JP4387801B2 (ja) | 半導体ウェーハの乾式蝕刻方法 | |
| JPS60120525A (ja) | 反応性イオンエツチング方法 | |
| JPH0770510B2 (ja) | プラズマ処理装置 | |
| JPH09330915A (ja) | 表面処理装置 | |
| US12417910B2 (en) | Method of reducing surface roughness | |
| US20250299962A1 (en) | Method for etching a layer through a patterned mask layer | |
| JP2602285B2 (ja) | 半導体装置の製造方法 | |
| KR100511918B1 (ko) | 웨이퍼 엣지 처리장치 | |
| JPH06101072A (ja) | プラズマ装置 | |
| Kim et al. | Etching characteristics of fine Ta patterns with electron cyclotron resonance chlorine plasma | |
| JPH0794485A (ja) | 表面処理方法およびその装置 | |
| JPH0621015A (ja) | 半導体装置の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |