JP4073204B2 - エッチング方法 - Google Patents

エッチング方法 Download PDF

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Publication number
JP4073204B2
JP4073204B2 JP2001353809A JP2001353809A JP4073204B2 JP 4073204 B2 JP4073204 B2 JP 4073204B2 JP 2001353809 A JP2001353809 A JP 2001353809A JP 2001353809 A JP2001353809 A JP 2001353809A JP 4073204 B2 JP4073204 B2 JP 4073204B2
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JP
Japan
Prior art keywords
electrode
processed
plasma
orifice
particle beam
Prior art date
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Expired - Lifetime
Application number
JP2001353809A
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English (en)
Japanese (ja)
Other versions
JP2003158099A5 (enExample
JP2003158099A (ja
Inventor
克則 一木
和雄 山内
浩国 檜山
誠二 寒川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku University NUC
Ebara Corp
Original Assignee
Tohoku University NUC
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku University NUC, Ebara Corp filed Critical Tohoku University NUC
Priority to JP2001353809A priority Critical patent/JP4073204B2/ja
Priority to PCT/JP2002/011658 priority patent/WO2003044842A1/en
Priority to US10/493,414 priority patent/US7144520B2/en
Priority to TW091133466A priority patent/TW589681B/zh
Publication of JP2003158099A publication Critical patent/JP2003158099A/ja
Publication of JP2003158099A5 publication Critical patent/JP2003158099A5/ja
Application granted granted Critical
Publication of JP4073204B2 publication Critical patent/JP4073204B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2001353809A 2001-11-19 2001-11-19 エッチング方法 Expired - Lifetime JP4073204B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001353809A JP4073204B2 (ja) 2001-11-19 2001-11-19 エッチング方法
PCT/JP2002/011658 WO2003044842A1 (en) 2001-11-19 2002-11-08 Etching method and apparatus
US10/493,414 US7144520B2 (en) 2001-11-19 2002-11-08 Etching method and apparatus
TW091133466A TW589681B (en) 2001-11-19 2002-11-15 Etching method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001353809A JP4073204B2 (ja) 2001-11-19 2001-11-19 エッチング方法

Publications (3)

Publication Number Publication Date
JP2003158099A JP2003158099A (ja) 2003-05-30
JP2003158099A5 JP2003158099A5 (enExample) 2005-04-07
JP4073204B2 true JP4073204B2 (ja) 2008-04-09

Family

ID=19165758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001353809A Expired - Lifetime JP4073204B2 (ja) 2001-11-19 2001-11-19 エッチング方法

Country Status (4)

Country Link
US (1) US7144520B2 (enExample)
JP (1) JP4073204B2 (enExample)
TW (1) TW589681B (enExample)
WO (1) WO2003044842A1 (enExample)

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* Cited by examiner, † Cited by third party
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DE10317027A1 (de) * 2003-04-11 2004-11-11 Leybold Optics Gmbh Hochfrequenz-Plasmastrahlquelle und Verfahren zum Bestrahlen einer Oberfläche
JP2006049817A (ja) * 2004-07-07 2006-02-16 Showa Denko Kk プラズマ処理方法およびプラズマエッチング方法
EP1630849B1 (en) * 2004-08-27 2011-11-02 Fei Company Localized plasma processing
KR100851901B1 (ko) * 2005-01-07 2008-08-13 삼성전자주식회사 이온 빔 추출장치
KR100714898B1 (ko) * 2005-01-21 2007-05-04 삼성전자주식회사 중성빔을 이용한 기판 처리장치 및 처리방법
KR100610665B1 (ko) 2005-02-03 2006-08-09 삼성전자주식회사 중성빔을 이용한 식각장치
US7358484B2 (en) * 2005-09-29 2008-04-15 Tokyo Electron Limited Hyperthermal neutral beam source and method of operating
US7335602B2 (en) * 2006-01-18 2008-02-26 Freescale Semiconductor, Inc. Charge-free layer by layer etching of dielectrics
US20080169064A1 (en) * 2007-01-11 2008-07-17 Ushio Denki Kabushiki Kaisha Surface-treating apparatus
KR20080096771A (ko) 2007-02-09 2008-11-03 캐논 아네르바 가부시키가이샤 산화 처리 방법 및 산화 처리 장치
US20090013527A1 (en) * 2007-07-11 2009-01-15 International Business Machines Corporation Collapsable connection mold repair method utilizing femtosecond laser pulse lengths
KR100898589B1 (ko) * 2007-08-13 2009-05-20 주식회사 하이닉스반도체 반도체 소자 제조 방법
US8614151B2 (en) * 2008-01-04 2013-12-24 Micron Technology, Inc. Method of etching a high aspect ratio contact
JP2010228066A (ja) * 2009-03-27 2010-10-14 Kyushu Univ ナノドットの作製方法
US20110177694A1 (en) * 2010-01-15 2011-07-21 Tokyo Electron Limited Switchable Neutral Beam Source
US8828883B2 (en) 2010-08-24 2014-09-09 Micron Technology, Inc. Methods and apparatuses for energetic neutral flux generation for processing a substrate
FR2965697B1 (fr) * 2010-09-30 2014-01-03 Astrium Sas Procede et dispositif pour la formation d'un faisceau plasma.
US9105705B2 (en) * 2011-03-14 2015-08-11 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
CN102332384A (zh) * 2011-09-26 2012-01-25 中国科学院微电子研究所 产生中性粒子束装置及方法
US9048190B2 (en) * 2012-10-09 2015-06-02 Applied Materials, Inc. Methods and apparatus for processing substrates using an ion shield
KR101661638B1 (ko) * 2012-11-02 2016-09-30 캐논 아네르바 가부시키가이샤 반도체 장치의 제조 방법, 이온빔 에칭 장치 및 제어 장치
US9978568B2 (en) 2013-08-12 2018-05-22 Tokyo Electron Limited Self-sustained non-ambipolar direct current (DC) plasma at low power
KR101579506B1 (ko) * 2014-07-08 2015-12-23 피에스케이 주식회사 기판 처리 장치 및 그 파티클 취급 방법
US20160013020A1 (en) * 2014-07-14 2016-01-14 Lam Research Corporation Systems and methods for producing energetic neutrals
US10475626B2 (en) * 2015-03-17 2019-11-12 Applied Materials, Inc. Ion-ion plasma atomic layer etch process and reactor
US9960089B2 (en) * 2015-04-03 2018-05-01 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for endpoint detection
DE102016220248A1 (de) * 2016-10-17 2018-04-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und verfahren zum anisotropen drie-ätzen mit fluorgasmischung
JP6790731B2 (ja) * 2016-11-01 2020-11-25 東洋製罐グループホールディングス株式会社 ダイヤモンド膜表面に微細周期構造溝を形成する方法
CN107331593B (zh) * 2017-08-11 2018-10-12 大连理工大学 一种基于射频放电的正负离子源
JP7323476B2 (ja) * 2020-02-19 2023-08-08 住友電気工業株式会社 半導体装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4523971A (en) * 1984-06-28 1985-06-18 International Business Machines Corporation Programmable ion beam patterning system
DE4039930A1 (de) * 1990-12-14 1992-06-17 Leybold Ag Vorrichtung fuer plasmabehandlung
JPH0775230B2 (ja) 1991-09-24 1995-08-09 株式会社小電力高速通信研究所 プラズマエッチング終点モニタリング方法
US5462629A (en) * 1992-08-28 1995-10-31 Kawasaki Steel Corp. Surface processing apparatus using neutral beam
DE4241045C1 (de) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
US6054395A (en) * 1997-10-24 2000-04-25 Micron Technology, Inc. Method of patterning a semiconductor device
US6641747B1 (en) * 2001-02-15 2003-11-04 Advanced Micro Devices, Inc. Method and apparatus for determining an etch endpoint
JP4039834B2 (ja) * 2001-09-28 2008-01-30 株式会社荏原製作所 エッチング方法及びエッチング装置

Also Published As

Publication number Publication date
US7144520B2 (en) 2006-12-05
TW200300579A (en) 2003-06-01
WO2003044842A1 (en) 2003-05-30
JP2003158099A (ja) 2003-05-30
US20040244687A1 (en) 2004-12-09
TW589681B (en) 2004-06-01

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