TW584966B - Semiconductor device and process for producing the same - Google Patents

Semiconductor device and process for producing the same Download PDF

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Publication number
TW584966B
TW584966B TW090126745A TW90126745A TW584966B TW 584966 B TW584966 B TW 584966B TW 090126745 A TW090126745 A TW 090126745A TW 90126745 A TW90126745 A TW 90126745A TW 584966 B TW584966 B TW 584966B
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Taiwan
Prior art keywords
insulating film
gate
semiconductor device
gate electrode
film
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TW090126745A
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English (en)
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Jiro Yugami
Natsuki Yokoyama
Toshiyuki Mine
Yasushi Goto
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Hitachi Ltd
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Description

584966 A7 B7
〔發明之技術領域〕 本發明係有關半導體裝置及其製造方法，特別是關於一 種具有MISFET之半導體裝置及其製造方法，該MISFET係 以具有較習知之矽氧化膜高之介電常數之絕緣膜，作為問 極絕緣膜而使用。 〔先前技藝〕 於半導體裝置中，技術發展係由高積體化，低耗電化與 高速化之三觀點提昇而來，其中，於MISFET中之低耗電化 與高速化係為互相衝突之課題，為求其兩立，而要求超出 過去之沒極之閘極絕緣膜之薄層化。另一方面，從過去作 為問極絕緣膜而被使用之秒氧化膜，其與矽基板之界面特 性優良，具有作為絕緣膜時之頻帶間隙大之優良性，但因 介電常數為3·8〜3.9，於現在之裝置性能之要求上，其膜厚 亦須為3 nm左右 荷量決定，關於 。该絕緣膜之膜厚係由必要之通道引起電
絕緣膜之電壓，則可以下式表示。
若將絕緣膜之膜厚進行薄膜化成為3 nm以下，則觀測到
膜進行超越目前之薄膜化係困難者。
584966 A7 B7 五、發明説明（2 ) 成正比，而與膜厚t成反比。ε之大絕緣膜已知有鈦、鋰 、給、铭、鑭、銘、紙等等之氧化操，例如B. He等所發表 之論文中（國際電子裝置會技術文摘第1038〜1040頁）記述使 用鈥氧化膜之MIS (Metal Insulator Silicon)構造之特性，換算 成矽氧化膜之介電常數之膜厚（EOT : Equivalent Oxide Thickness等價氧化物膜厚），即使為1.1 nm之絕緣膜亦可抑 制直接隧道電流。 此外，於特開平11-3990號公報中，為防止於閘極絕緣膜 中使用高介電常數材料時，因閘極電場增大而增大電流漏 電造成元件特性惡化，及因閘極電場與汲極電場之重疊而 發生短通道效應，而揭示了以下之半導體裝置。該半導體 裝置，其閘極絕緣膜係於閘極長方向較閘極電極為短而形 成，於閘極長方向之閘極絕緣膜之侧邊，且於為閘極電極 及半導體基板所夾住之區域中，並至少於閘極電極與擴散 層之平面重疊區域中，設置具有較空間或閘極絕緣膜更低 之介電常數之電介質。 〔發明發所欲解決之課題〕 同上述B. He等之論文中記載，若使用鈦氧化膜等介電 常數高之絕緣膜，因即使將EOT成為薄於1 nm以下，絕緣 膜之物理性膜厚亦相當厚，而可抑制直接穿隧電流。但該 技術中其具高介電常數之絕緣膜係鈦、姮等之金屬氧化物 ，其並未考慮該等金屬加入矽基板中所引起之接合漏電增 大等情況。於通常之MISFET之形成工序中，於閘極電極加 工時殘留閘極絕緣膜，一般係將其作為離子植入之通過膜 -5- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐） 以離子植入法形成源極、汲極之區域。此時，錢極絕緣 勝中含有金屬7C素’則難以避免撞擊效應所導致金屬元素 被引入石夕基板中。 士再者，由B· Cheng等之（電機及電子學工程師聯合會電子 裝置報帛46卷7月1999年第U37〜1544頁）論文中指出 乂同J i ^數絕緣膜作為閘極絕緣膜使用時，因閘極端 β與源極、》及極間乏交/、息4、/·Γ · 性间之谷1 (邊紋（fnnge)容量）而發生端部效 應’而降低裝置性能。 再者，則述特開平u_3990公報中所記載之先前技術，因 係於閘極電極與擴散層之平面重4區域中，存在具有較空 間或問極絕緣膜之介電常數低之電介質，而擴散層上方並 絲置閘極絕緣膜，故並未考慮到達成高速化之困難。 β A月之第之目的，係提供一種半導體裝置，其以較 氧化物（^ %吊數向《絕緣膜作為閘極絕緣膜，高速地
動作，短通道特性及砺#/T + A 、伢庄及驅動電流優異，且導入較少之金屬开 素至矽基板中。 m π π π 性干译砬蒗置之製造 其以較錢化物之介電常數高之絕緣膜作為問極續 艇，向速地動作’短通道特性及 少之金屬元素至石夕基板中。 且導入 〔解決課題之手段〕 车：達成上述第一目的’本發明之半導體裝置，係具有 曰麵 膜而配置有閘極電極之場效 日日組，閘極絕緣膜為介雷 丨％吊數較矽氧化膜高之絕緣膜， -6- 584966
孩閘極絕緣膜之閘極長方向之端部，設置於較閘極電極之 源極側、汲極侧之端部更内侧處，且使該閘極絕緣膜之端部 位於閘極電極，與源極區域及沒極區域平面重疊之區域。 再者，為達成上述之第一之目的，本發明之半導體裝置 ，係具有於半導體基板上通過閘極絕緣膜而配置有閘極電 極之場效電晶體，閘極絕緣膜為介電常數較矽氧化膜高之 絕緣膜，將該閘極絕緣膜之閘極長方向之端部，設置於較 閘極電極之源極侧、汲極側之端部更内側處，且延伸場效 電晶體之源極區域及汲極區域至閘極絕緣膜之下方。 不論哪種半導體裝置，閘極絕緣膜之端部皆指其厚度為 最厚之端部。亦即閘極絕緣膜係包含複數層，各自之端部 之位置不同時，因自閘極電極之端部起最内側部分之内側 為作為閘極絕緣膜之最厚部分，故該部分曾為閘極絕緣膜 之端部。此外，即使閘極絕緣膜之端部對基板非垂直時， 亦以自閘極端部起最内側之部分為其端部。 該閘極電極之閘極長方向之端部，係以位於自閘極電極 之源極侧、汲極側之端部起各自為15 nm〜25 ηιη更内側處較 佳。為閘極絕緣膜’係以使用選自包含鈥、叙、铪、結、 I呂、鋼、及總之群中之一種金屬之氧化物、氮氧化合物或 石夕fe:鹽化合物較佳。在此，碎酸鹽化合物係定義為於石夕之 氧化物（Si〇2)中含有上述金屬之氧化物之構造。再者，閘 極絕緣膜之介電常數為至3〇〇左右較佳，如超出3〇〇，則閘 極絕緣膜之膜厚將變成過厚。 閘極絶緣膜為複數之層時，可以形成由包含選自如鈥、 本紙張尺度適用中國國豕標準(CNS) A4規格(210 X 297公爱)
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銓、給、錘、鋁、鑭、及鳃所組之群中之至少一種金屬之 氧化物之層，及於該層下方設置包含該金屬矽酸鹽化之層 之積層構造。 前述源極區域及前述沒極區域，係以不含有包含於前述 絕緣膜中之金屬，或含有濃度為，原子w以下者較佳 閘極包極則以選自包含鎢、鈦及鉬之群之至少一種金屬 或其氮化物或矽化物者較佳。 再者，為達成上述第二目的，本發明之半導體裝置之製 造方法，係'包含：於半導體基板上形成介電常數較梦氧化 膜高之絕緣膜，並於該絕緣膜上形成導電性膜之工序；加 工導電性膜而作為’電極之王序；除去間極電極下方部 刀外〈介電常數高之絕緣膜，且使殘留部分之端部位於形 成有閘#電極《源極區域侧之端部及形成有汲極區域侧之 端部之内御! ’以該殘留部分作為閘極絕緣膜之工序；至少 於閘極絕緣膜之閘極長方向之側方及半導體基板上，形成
介電常數較閘極絕緣膜低之第2絕緣膜之工序；通過第W 緣膜而以離子植人法植人㈣劑於基板中，以形成源極區 域及_區域’且延伸源極區域Μ極區域於問極絕緣膜 之下方之工序。 再者’為達成上述第二目ό卜本發明之半導體裝置之製 以：法，係、包含：於半導體基板上形成介電常數較矽氧化 膜高形成第！絕緣膜’於第！絕緣膜上形成介電常數較第^ 絕緣膜高之第2絕緣，^第2絕緣膜上形成導電性膜之工序 ;加工導電性膜做為間極電極之工序；去除開極電極下方 I_______ - ϋ 本纸張尺度適财@ S家;^(CNS) Α4規格(〗1GX297公g A7 B7
584966 五、發明説明（6 ) 部分外之第2絕緣膜，且使殘留部分之端部位於形成有閑 極電極之源極區域側之端部及形成有汲極區域侧之端部i 内側，以該殘留部分作為閘極絕緣膜之工序；通過第\ = 緣膜而以離子植入法植入摻雜劑於基板中，以形成源極= 域及没極區域’且延伸源極區域及没極區域於閘極絕緣膜 之下方之工序。 上述（高比介值常數之絕緣膜係以非結晶狀態形成，較 佳為以乾㈣進行除去該比介值常數高之絕緣膜之—部二 後’再以㈣刻進行。且較佳為為於錢刻後進行結晶二 該介電常數高之絕緣膜。此外’該介電常數高之絕緣膜之 去除’以使所殘留部分之端部位於較問極電極之源極區域 側、汲極區域側之端部1 5 Dm ^ 、 ' m响#15 nm〜25聰内侧處較佳。因所殘留 部分成為閘極絕緣膜，故並设却立t 、 巴豕膠故具响#思味與上述閘極絕緣膜之 端部相同。 上述之接雜劑之植入係可以斜離子植入法進行。問極 緣膜之材質、閘極電極之材質係如上所述。再者，將閘 電極作為多結晶石夕，禎數夕p 朽 ^ 禝数I閘極备極係可以離子植入不 物貝’而使其工作函數彼士卜相g , 、 F山数後此相井。閘極絕緣膜與閘極電 之理想材料係如同上述者。 〔發明之實施形態〕 <實施例1 > 、圖2來說明本發明之實施例。於預先 I作有P型、N型井構造等所 ’以習知技術形成溝道植型
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1人<雖貝成分之矽基板101上 土又兀件分離區域構造102。
584966 A7 B7 五、發明説明（7 ) 之後，清洗矽基板表面，再去除矽基板表面之氧化膜後， 連續形成介電常數較石夕氧化膜高之高介電常數絕緣膜之鈦 氧化物103、做為閘極電極1〇4之金屬層、做為閘極加工時 之罩之矽氧化膜105，而成為圖丨（a)所示之構造。鈦氧化物 係以CVD (化學氣相沉積）法形成。此時，經由控制形成溫 度等，以非結晶狀態堆疊。此外，成為閘極電極之金屬膜 係使用以濺射法所形成鎢膜之膜。 之後，使用通常之微影術及乾蝕刻技術，加工矽氧化膜 105及鎢膜，形成閘極電極1〇4。此時，因乾蝕刻之特性， 鈦氧化膜103也少邵分被蝕刻，其上方則自較閘極電極1⑽ 之閘極長方向之端部起至内側處被蝕刻，而得到圖丨（b)之 構造。此時’鈥氧化膜1〇3之上方之端部係位於自閘極電 極104之端邵起15〜25 nm左右内側處。亦即作為閘極絕緣膜 之作用，閘極絕緣膜厚度最厚處為最大，只需將該部分之 端部置於上述位置即可。 在此’亦可進而切換為蝕刻鈦氧化物之氣體，以進行乾 姓刻，但為防止損傷基板，故使用濕蝕刻去除鈦氧化膜 103較佳。在此，經由氫氟酸，硝酸，乙酸之混合液，蝕 刻鈇氧化膜1〇3，1 (c)所示構造，還於我們之檢討中，金屬 氧化膜晶體化時，因濕式蝕刻率係，變相當慢，如前述層 形成時，於非結晶狀態，先形成，該圖1 (c)之構造後，經 熱處理，晶體化工序上容易，接下，經CVD法形成薄矽氧 化膜 106 (圖 1 (d))。 接著’以離子植入法與退火處理形成源極、汲極區域 10- 裝 訂 線 ___ - πυ t紙張尺度適财g g家標準_) 規格(21Gχ297公复) 584966 A7 B7 五、發明説明（8 ) 107。此處，藉由控制離子植入與退火處理條件，使源極 、汲極區域107與通道區域之境界位於高介電常數絕緣膜 之鈦氧化膜103所存在區域之下方，為使裝置特性提高之 一重要關鍵（圖2 (a))。 其次，以電漿CVD法堆疊乾蝕刻速度較快之層間絕緣膜 108後，使用微影術以光阻材料109對接觸區域進行圖案化 (圖2 (b))。以該光阻材料109作為罩而形成接觸孔，藉由使 用層間絕緣膜108與矽氧化膜106之蝕刻速度差，可於源極 、汲極區域107上形成自我整合的接觸孔。 接著，堆疊成為線路層之金屬膜11 〇 (圖2 (c))，以圖案 化形成MISFET構造。評價本構造之MISFET之特性，其結果 確定具有良好裝置特性。此外，構成包含於源極、沒極區 域107中之高介電常數絕緣膜之金屬，亦即鈦之濃度為1011 原子/ cm2以下。 此外，於本實施例中雖使用鈦氧化物作為高介電常數絕 緣膜，但使用選自由鈇、短、給、结、銘、_、及總所組 成之群之至少一種金屬之氧化物，或氮氧化合物，亦可得 到相同之效果。此外，使用藉由以上述之金屬（複數之金 屬亦可）之有機金屬化合物、有機矽化合物、氧氣作為源 極氣體之CVD而得之矽酸鹽化合物，亦可得到相同效果。 該矽酸鹽化合物係使用鈦作為金屬時，包含鈦-矽-氧氣之 秒酸鹽化合物。 此外，閘極電極係使用了鎢，但亦可使用鈦，鉬，或其 氮化物或秒化物，亦可得到相同之效果。 -11 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)
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584966 A7 B7 五、發明説明（9 ) 於該半導體中，若介電常數高之絕緣膜係位於在通道部 分及通道部連續之源極、汲極區域與閘極電極重疊區域之 上方，即可使流動通道部之引起電荷量增加。另一方面， 因於閘極邊緣與源極、汲極之間會產生高電場，故該部分 係為配置矽氧化膜等介電常數較低之絕緣膜之構造，對邊 紋容量之低減非常有效。 <實施例2 > 其次，使用圖3、圖4說明本發明之第二實施例。與實施 例一相同，於預先製作有P型、N型井構造等所欲之雜質 成分之矽基板201上，形成溝道植入型之元件分離區域構 造202。之後，清洗矽基板表面，再去除矽基板表面之氧 化膜後，形成介電常數較矽氧化膜高之高介電常數絕緣膜 。在此，使用錘氧化物作為高介電常數材料。在此情形下 所形成之絕緣膜係於基板上形成包含介電常數較低（〜10左 右）之錘-矽-氧氣之所謂矽酸鹽膜203，於其上方則形成做 為積層構造之絕緣膜之結氧化物204。於其上連續地形成 做為閘極電極205之鎢層、做為閘極加工時之罩之矽氧化 膜206，而成為如圖3 (a)所示之構造。 之後，使用通常之微影術及乾蝕刻技術，加工矽氧化膜 206及鎢膜，形成閘極電極205。進而切換為蝕刻鈦氧化物 204之氣體，以進行乾蝕刻，選擇地留下矽酸鹽膜203，而 得到圖3 (b)之構造。在此，矽酸鹽膜203之物性與矽氧化物 幾乎相同，使用乾式蝕刻，可加大锆氧化膜與蝕刻速度差 ，便於得到圖3 (b)之構造。此外，錘氧化物204係其端部位 -12- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
•裝 % 584966 A7 B7 五、發明説明（1〇 ) 於較閘極電極205之閘極長方向之端部起15〜25 nm左右内側 處。 接著，以離子植入法與退火處理形成源極、汲極區域 207。此處，藉由控制離子植入與退火條件，使源極、沒 極區域207與通道區域之境界位於錘氧化膜204所存在區域 之下方，為使裝置特性提高之一重要關键（圖3 (c))。 此外，上述矽酸鹽膜203中之錘濃度係數為％，往基板中 撞擊之锆原子量為1011原子/cm2左右可減低通過氧化錯膜 而進行離子植入之場合時之一成以下。因此，在此並不形 成於實施例1中所使用之離子植入用之通過膜。 其次，以電漿CVD法堆疊乾蝕刻速度較快之層間絕緣膜 208後，使用微影術以光阻材料209對接觸區域進行圖案化 (圖4 (a))。以該光阻材料209作為罩而形成接觸孔，堆疊成 為線路層之金屬膜210 (圖4(b))，進行圖案化，形成 MISFET構造。 在此，通道方向之閘極絕緣膜之有效膜厚（換算成矽氧 化膜之介電常數之絕緣膜）與雜質濃度之關係表示於圖5。 如此有效膜厚之部分位於連接於通道部之源極、汲極區域 上，可充分進行電荷之引起，使通道電流增加。另一方面 ，藉由加厚上述以外區域之有效膜厚，可不使端部容量增 大，結果可提昇裝置之動作速度。 評價本構造之MISFET之特性，其結果確定具有良好裝 置特性。 此外，於本實施例中雖使用錘氧化物作為高介電常數絕 -13- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐） 裝 訂
584966 A7 B7 五、發明説明（11 ) 緣膜，但使用選自由鈦、鉅、铪、錯、鋁、鑭、及鳃所組 成之群之至少一種金屬之氧化物，或氮氧化合物，亦可得 到相同之效果。 此外，閘極電極係使用了鎢，但亦可使用鈦，鉬，或其 氮化物或秒化物，亦可得到相同之效果。 <實施例3 > 接著使用圖6及圖7說明本發明之第3實施例。於本實施 例中係製作複數個MISFET，同時製作P型通道、N型通道 兩種MISFET。因此，閘極電極材料係使用多結晶矽，藉由 以MISFET將摻染P或B之多結晶矽作為閘極電極，而改變 閘極電極之工作函數。 與實施例1相同，於預先製作有所欲之雜質成分之矽基 板301上，形成溝道植入型之元件分離區域構造302。之後 ，清洗矽基板表面，再去除矽基板表面之氧化膜後，形成 介電常數較矽氧化膜高之高介電常數絕緣膜。在此係以 CVD法形成高介電常數絕緣膜。此處，以錘氧化物作為高 介電常數材料。此時所形成之絕緣膜，係包含於基板上介 電常數較低（〜10左右）之錘-矽-氧氣之所謂矽酸鹽膜303， 其上則形成結氧化物304，而成為積層構造之絕緣膜。其 上則如上所述，形成作為閘極電極305之多結晶矽膜，以 離子植入法導入P或B。於施予適當之退火處理後，連續 形成閘極加工時之罩之矽氧化膜306，成為圖6 (a)所示之構 造。 之後，使用通常之微影術及乾蝕刻技術，加工矽氧化膜 -14- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 584966 A7 B7
306及參雜有P或B之多結晶矽膜，形成閘極電極3〇5。進而 切換為蝕刻锆氧化物304之氣體，以進行乾蝕刻，選擇地 留下矽酸鹽膜303，而得到與第2實施例中之圖3 (b)相同之 構造。接著使用以氫氟酸進行乾蝕刻之技術，選擇地留下 閘極電極下部之一部分，除去矽酸鹽膜3〇3而得到圖6(b)中 之構k 此處，秒故鹽膜3係其端部位於較閘極電極3 〇5 之閘極長方向之端部起15〜25 nm左右内侧處。 •之後，以CVD法形成作為離子植入用之通過膜之矽氧化 膜307。該情形示於圖6 (c)。在此，為提昇短通道特性，使 離子植入之植入能量變小為2 kev，以使源極、汲極之擴散 層變淺。因此，上述通過層之膜厚亦僅為5 ηιη。如此，如 圖6 (c)所示，成為即使閘極電極側面形成通過膜後，於閘 極電極下方亦具有1〇〜20 nm左右之凹部之構造。 在此，形成淺擴散層，並為使源極、汲極區域與有效膜 厚非常薄之區域重疊，於本實施例中，使用斜離子植入法 。在此，將植入角度設定為30度，使源極、汲極區域可到 達閘極下方之有效膜厚較薄之區域。 藉由上述斜離子植入法與退火處理，如圖7 (a)所示，形 成源極、汲極區域。如此，為使源極、汲極區域與閘極絕 緣膜之有效膜厚非常薄之部分重疊，上述之閘極側壁凹部 之控制亦為一種有效之手段。此外，構成包含於源極、汲 極區域中高介電常數之絕緣膜之金屬，亦即錯之濃度係為 10"原子/ cm2以下。 其次，以電漿CVD法堆疊乾蝕刻速度較快之層間絕緣膜 -15- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐）
•裝 訂
584966 A7 B7 五、發明説明（13 ) 308後，使用微影術以光阻材料309對接觸區域進行圖案化 (圖7 (b))。以該光阻材料309作為罩而形成接觸孔，堆疊成 為線路層之金屬膜310(圖7(c))，進行圖案化，形成MISFET 構造。在此與第一實施例同樣，利用層間絕緣膜308與通 道層之矽氧化膜307之乾式蝕刻速度差，形成自我整合的 接合孔。 評價本構造之MISFET之特性，其結果確定其短通道特性 與驅動電流卓越，具有良好裝置特性。 此外，於本實施例中雖使用錘氧化物作為高介電常數絕 緣膜，但使用選自由鈇、短、給、錯、铭、鑭、及總所組 成之群之至少一種金屬之氧化物，或氮氧化合物，亦可得 到相同之效果。 此外，閘極電極係使用了鎢，但亦可使用鈦，鉬，或其 氮化物或矽化物，亦可得到相同之效果。 〔發明之效果〕 根據本發明，可達成MISFET裝置高速化。此外並可回避 對金屬元件對秒基板中造成污染與端部容量之增加。 〔圖式之簡要說明〕 【圖1】 本發明之實施例1之半導體裝置之製造工序圖。 【圖2】 本發明之實施例1之半導體裝置之製造工序圖。 【圖3】 本發明之實施例2之半導體裝置之製造工序圖。 -16- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 584966 A7 B7 五、發明説明（ 14 ) 【圖 4] 本發明之實施例 2之半導體裝置之製造工 序 圖。 【圖 5] 說 明本發明之通道方向之閘極絕緣膜有效膜厚與雜質濃 度之 關係圖。 【圖 6] 本發明之實施例 3之半導體裝置之製造工 序 圖。 【圖 7 ] 本發明之實施例 3之半導體裝置之製造工 序 圖。 元件 符號之說明 101、 20卜 301........ ,矽基板 102 ' 202 ^ 302........ ，元件分離區域構造 103·. ......鈦氧化膜 104、 205、 305........ 閘極電極 105 ^ 106、 206 、 306 |、307........矽氧化膜 107、 207.·· .....源極， 、沒極區域 108、 208 - 308........ ，層間絕緣膜 109 ^ 209 ^ 309........ ，光阻材料 110、 210 ' 310........ 金屬膜 203 > 303··. .....矽酸鹽膜 204、 304… .....锆氧化膜 -17- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)

Claims (1)

  1. 584966 A8 B8 C8 D8 A年/月^%修正
    第090126745號專利_請案 中文申凊專利範圍替換本(92年8月) 申請專利範圍 ι· 一種半導體裝置，其具有於半導體基板上隔著閘極絕緣 膜而配置有閘極電極之場效電晶體，其特徵為： 上述閘極絕緣膜係介電常數較矽氧化膜高之絕緣膜； 上述閘極絕緣膜之閘極長方向之端部係位於較上述閘 極電極之源極側、汲極側之端部更内側處，且上述閘極 絕緣膜之上述端部係位於上述閘極電極與源極區域及汲 極區域平面上重疊區域之處。 2· —種半導體裝置，其具有於半導體基板上隔著閘極絕緣 膜而配置有閘極電極之場效電晶體，其特徵為： 上述閘極絕緣膜係介電常數較矽氧化膜高之絕緣膜； 上述閘極絕緣膜之閘極長方向之端部係位於較上述閘 極電極之源極側、汲極側之端部更内側處；且 上述場效電晶體之源極區域及汲極區域係延伸於上述 閘極絕緣膜之下部。 3 .根據申請專利範圍第丨或2項之半導體裝置，其中在上 述閘極絕緣膜之閘極長方向之端部之側方且上述半導體 基板上，設置有介電常數較上述閘極絕緣膜低之絕緣膜 〇 4·根據申請專利範圍第丨或2項之半導體裝置，其中上述 閘極絕緣膜之閘極長方向之端部係位於自上述閘極電極 之源極側、汲極側之端部起15 nm〜25 nm内側處。 5·根據申請專利範圍第1或2項之半導體裝置，其中上述 閘極絕緣膜係選自鈦、姮、銓、锆、鋁、鑭、及鳃所組 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 申請專利範圍 之群中之至少一種金屬之氧化物、氮氧化合物或矽酸鹽 化合物。 6.根據申凊專利範圍第1或2項之半導體裝置，其中上述 閘極絕緣膜係為下述層的積層構造：包含選自鈦、鈕、 給、錘、鋁、鑭、及鳃所組之群中之至少一種金屬之氧 化物之層；及包含該金屬之矽酸鹽化合物之層。 7·根據申請專利範圍第1或2項之半導體裝置，其中上述 源極區域及上述汲極區域，係不含有包含於上述絕緣膜 中之金屬，或者含有濃度為1〇ιι原子/cm2以下。 8 ’根據申请專利範圍第1或2項之半導體裝置，其中上述 閘極電極係選自鎢、鈦及鉬所組之群中之至少一種之金 屬或其氮化物或矽化物。 9· 一種半導體裝置之製造方法，其包含 於半導體基板上形成介電常數較矽氧化膜高之絕緣膜 ’於該絕緣膜上形成導電性膜之工序； 加工上述導電性膜，以作為閘極電極之工序； 去除上述介電常數高之絕緣膜之上述閘極電極下方以 外之部刀，且使所殘留部分之端部位於上述閘極電極之 源極區域所形成側之端部及沒極區域所形成側之端部之 内側，以該殘留部分做為閘極絕緣膜工序； =少於上述閘極絕緣膜之閘極長方向之側方且上述半 導月丘基板i，形《介電常數較上述閑極絕緣膜低之 絕緣膜之工序； -2 - 本紙張尺度適财目时_(CNS) A4規格釐厂------
    通過上述第2絕緣膜，以離子植 丁植入法植入摻雜劑於基 而形成源㈣域及㈣區域，且延伸該源極區域及 沒極區域於閘極絕緣膜之下部之工序。 10·根據申請專利範圍第9項之半導體裝置之製造方法，其 中上述介電常數高之絕緣膜係以非結晶形成； —上述介電常數高之絕緣膜之去除，係以乾蝕刻去除其 一部分後，再以濕蝕刻進行。 u.根據申請專利範圍第10項之半導體裝置之製造方法，其 中於上述濕蝕刻後，結晶化上述介電常數高之絕緣膜： 12.根據申請專利範圍第9至„項中任一項之半導體裝置之 1U方法，其中上述摻雜劑之植入，係以斜離子植入法 進行。 13·根據申請專利範圍第9至丨i項中任一項之半導體裝置之 製造方法，其中上述介電常數高之絕緣膜之去除，係以 使上述殘留部分之端部位於較上述閘極電極之源極區域 側汲極區域側之端部15 nm〜25 nm内側處之方式進行 14·根據申請專利範圍第9至11項中任一項之半導體裝置之 製造方法，其中上述閘極絕緣膜係選自鈦、鈕、銓、锆 、鋁、鑭、及鳃所組之群中之至少一種金屬之氧化物、 氮氧化合物或矽酸鹽化合物。 15.根據申請專利範圍第9至11項中任一項之半導體裝置之 製造方法，其中上述閘極電極係選自鎢、鈦及鉬所組之 -3- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) A8 B8 C8 -----------D8 六、申請專利範圍 --— 群中之至少一種金屬或其氮化物或矽化物。 16·根據中請專利範圍第9錢項中任—項之半導體裝置之 製造方法’其中上述閘極電極係包含多結晶矽；複數個 上述問極電極鋪由上述離子植人之物質相異，使其工 作函數彼此不同。 一種半導體裝置之製造方法，其特徵為包含： 於半導體基板上形&介電常數較碎氧化膜高之第^邑 緣膜，於該第1絕緣膜上形成介電常數較第丨絕緣膜高 之第2絕緣膜，於該第2絕緣膜上形成導電性膜之工序； 加工上述導電性膜，以作為閘極電極之工序； 去除上述第2絕緣膜之閘極電極下部以外之部分，且 使殘留部分之端部位於上述閘極電極之源極區域形成侧 之端部及汲極區域形成侧之端部之内侧，以該殘留部分 做為閘極絕緣膜之工序； 通過上述第1絕緣膜，以離子植入法植入摻雜劑於基 板中，以形成源極區域及汲極區域，且延伸該源極區域 及汲極區域於上述閘極絕緣膜之下部之工序。 18·根據申請專利範圍第17之半導體裝置之製造方法，其中 上述閘極絕緣膜係選自鈦、妲、銓、锆、鋁、鋼、及趟 所組之群中之至少一種金屬之氧化物、或氮氧化合物； 上述第2絕緣膜係矽酸鹽化合物。 19·根據申請專利範圍第π或18項之半導體裝置之製造方法 ，其中上述閘極絕緣膜係選自鎢、鈦及鉬所組之群中之 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 584966 A B c D 、申請專利範圍 至少一種金屬或其氮化物或矽化物。 20.根據申請專利範圍第17或1 8項之半導體裝置之製造方 法，其中上述第2之絕緣膜之去除，係以使上述殘留部 分之端部位於較上述閘極電極之源極區域側、汲極區域 側之端部15 nm〜2 5 nm更内側處之方式進行。 -5 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)
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