JP5719381B2 - 低寄生容量ボディ・コンタクト・トランジスタ - Google Patents
低寄生容量ボディ・コンタクト・トランジスタ Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims description 95
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- 239000002184 metal Substances 0.000 claims description 68
- 238000000034 method Methods 0.000 claims description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 30
- 239000012212 insulator Substances 0.000 claims description 23
- 238000002955 isolation Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 13
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- 238000001459 lithography Methods 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 7
- 229910021332 silicide Inorganic materials 0.000 claims description 6
- 238000005137 deposition process Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- 238000011065 in-situ storage Methods 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
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- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000000224 chemical solution deposition Methods 0.000 description 3
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- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
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- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 208000031872 Body Remains Diseases 0.000 description 1
- 229910001339 C alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical compound [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
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- 230000005669 field effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910021483 silicon-carbon alloy Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
- H01L29/78615—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect with a body contact
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Description
Claims (17)
- 少なくとも1個の素子領域と少なくとも1個のボディ・コンタクト領域とをその中に有する半導体層を含む、SOI(semiconductor−on−insulator)基板、
前記少なくとも1個の素子領域内にある第1の材料スタックであって、前記第1の材料スタックが下から上にゲート誘電体、前記ゲート誘電体の上部表面に直接接触した金属ゲートおよび前記金属ゲートの上部表面全体に直接接触した添加シリコン含有物質を含む、第1の材料スタック、および
前記少なくとも1個のボディ・コンタクト領域内にある第2の材料スタックであって、前記第2の材料スタックが、前記半導体層の上部表面上にある前記第1の材料スタックの前記ゲート誘電体の一部、および前記少なくとも1個のボディ・コンタクト領域内の前記ゲート誘電体の前記一部の上部表面全体に直接接触した前記第1の材料スタックの前記添加シリコン含有物質の一部を含む、第2の材料スタック
を含む、半導体構造体。 - 少なくとも1個の素子領域と少なくとも1個のボディ・コンタクト領域とをその中に有する半導体層を含む、SOI基板、
前記少なくとも1個の素子領域内にあるトランジスタであって、前記トランジスタが下から上にゲート誘電体、前記ゲート誘電体の上部表面に直接接触した金属ゲートおよび前記金属ゲートの上部表面全体に直接接触した添加シリコン含有物質を含む、トランジスタ、および
前記少なくとも1個のボディ・コンタクト領域内にある材料スタックであって、前記材料スタックが、前記半導体層の上部表面上にある前記トランジスタの前記ゲート誘電体の一部、および前記少なくとも1個のボディ・コンタクト領域内の前記ゲート誘電体の前記一部の上部表面全体に直接接触した前記トランジスタの前記添加シリコン含有物質の一部を含む、材料スタック
を含む、半導体構造体。 - 前記SOI基板の前記半導体層内にある少なくとも1個の分離領域を更に含み、前記シリコン含有物質の別の部分が前記少なくとも1個の分離領域の上にある、請求項1または2に記載の半導体構造体。
- 前記ゲート誘電体が、酸化物、窒化物、酸窒化物およびその多層スタックから選択されるゲート絶縁物質を含む、請求項1または2に記載の半導体構造体。
- 前記金属ゲートが、元素金属、少なくとも1種類の元素金属のアロイ、元素金属窒化物、元素金属ケイ化物、またはその多層を含む、請求項1または2に記載の半導体構造体。
- 前記添加シリコン含有物質がアモルファスまたは多結晶である、請求項1または2に記載の半導体構造体。
- 前記添加シリコン含有物質がシリコンまたはシリコンゲルマニウムを含む、請求項1または2に記載の半導体構造体。
- 前記SOI基板の前記半導体層がドープされている、請求項1または2に記載の半導体構造体。
- 半導体構造体を製作する方法であって、
少なくとも1個の素子領域と少なくとも1個のボディ・コンタクト領域とをその中に有する半導体層を含む、SOI(semiconductor−on−insulator)基板を用意すること、
前記少なくとも1個の素子領域および前記少なくとも1個のボディ・コンタクト領域内にゲート・スタックを形成することであって、前記ゲート・スタックは、下から上にゲート誘電体および金属ゲートを含み、
前記少なくとも1個のボディ・コンタクト領域内の前記金属ゲートが露出するように、パターン形成されたマスクを前記少なくとも1個の素子領域内の前記金属ゲートの上に形成すること、
前記露出した金属ゲートを前記少なくとも1個のボディ・コンタクト領域内から除去して、前記ゲート誘電体の上部表面を露出させること、並びに
添加シリコン含有物質を前記少なくとも1個の素子領域内と前記少なくとも1個のボディ・コンタクト領域内の両方に形成することであって、前記少なくとも1個の素子領域内の前記添加シリコン含有物質の第1の部分は前記金属ゲート上にあり、前記少なくとも1個のボディ・コンタクト領域内の前記添加シリコン含有物質の第2の部分は前記ゲート誘電体の前記露出表面に直接接触する、
を含む、方法。 - 前記SOI基板を用意することが層移動プロセスまたはイオン注入プロセスを含む、請求項9に記載の方法。
- 前記SOI基板を用意することが、さらに、少なくとも1個のトレンチ分離を前記半導体層内に形成することを含む、請求項9に記載の方法。
- 前記パターン形成されたマスクが、リソグラフィ単独で、またはマスク物質の堆積、リソグラフィ、およびエッチングによって形成される、請求項9に記載の方法。
- 前記露出した金属ゲートを除去することが、前記パターン形成されたマスクおよび下にある誘電または絶縁物質に選択的に前記金属ゲートを除去するエッチング・プロセスを含む、請求項9に記載の方法。
- 前記エッチングがドライ・エッチング、ウェット・エッチングまたはその組合せを含む、請求項13に記載の方法。
- 前記添加シリコン含有物質が、インサイチュ(in−situ)ドーピング堆積プロセス、または堆積とそれに続くドーピングによって形成される、請求項9に記載の方法。
- 前記露出した金属ゲートを除去した後、かつ前記添加シリコン含有物質を形成する前に、前記パターン形成されたマスクを除去することを更に含む、請求項9に記載の方法。
- 前記SOI基板を用意することが、前記少なくとも1個の素子領域および前記少なくとも1個のボディ・コンタクト領域内の前記半導体層にドープすることを含む、請求項9に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/652,364 | 2010-01-05 | ||
US12/652,364 US8441071B2 (en) | 2010-01-05 | 2010-01-05 | Body contacted transistor with reduced parasitic capacitance |
PCT/US2010/060179 WO2011084397A2 (en) | 2010-01-05 | 2010-12-14 | Body contacted transistor with reduced parasitic capacitance |
Publications (2)
Publication Number | Publication Date |
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JP2013516762A JP2013516762A (ja) | 2013-05-13 |
JP5719381B2 true JP5719381B2 (ja) | 2015-05-20 |
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JP2012547103A Active JP5719381B2 (ja) | 2010-01-05 | 2010-12-14 | 低寄生容量ボディ・コンタクト・トランジスタ |
Country Status (6)
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US (2) | US8441071B2 (ja) |
JP (1) | JP5719381B2 (ja) |
CN (1) | CN102725850B (ja) |
DE (1) | DE112010004534B4 (ja) |
GB (1) | GB2489882B (ja) |
WO (1) | WO2011084397A2 (ja) |
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US8829616B2 (en) | 2012-10-25 | 2014-09-09 | International Business Machines Corporation | Method and structure for body contacted FET with reduced body resistance and source to drain contact leakage |
KR102111747B1 (ko) | 2014-02-25 | 2020-05-18 | 삼성디스플레이 주식회사 | 유기전계발광 표시장치 |
Family Cites Families (14)
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US5215931A (en) * | 1989-06-13 | 1993-06-01 | Texas Instruments Incorporated | Method of making extended body contact for semiconductor over insulator transistor |
US5185280A (en) * | 1991-01-29 | 1993-02-09 | Texas Instruments Incorporated | Method of fabricating a soi transistor with pocket implant and body-to-source (bts) contact |
AU688550B2 (en) | 1994-09-19 | 1998-03-12 | Sega Enterprises, Ltd. | Game apparatus using an object of which movement determines a result of a game |
JPH10150204A (ja) * | 1996-09-19 | 1998-06-02 | Toshiba Corp | 半導体装置およびその製造方法 |
ATE275761T1 (de) * | 1997-03-26 | 2004-09-15 | Canon Kk | Halbleitersubstrat und verfahren zu dessen herstellung |
JPH10294464A (ja) * | 1997-04-17 | 1998-11-04 | Fujitsu Ltd | 絶縁ゲート型電界効果トランジスタ |
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US7453121B2 (en) * | 2003-12-22 | 2008-11-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Body contact formation in partially depleted silicon on insulator device |
-
2010
- 2010-01-05 US US12/652,364 patent/US8441071B2/en active Active
- 2010-12-14 WO PCT/US2010/060179 patent/WO2011084397A2/en active Application Filing
- 2010-12-14 JP JP2012547103A patent/JP5719381B2/ja active Active
- 2010-12-14 DE DE112010004534.8T patent/DE112010004534B4/de active Active
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GB201213597D0 (en) | 2012-09-12 |
US9269783B2 (en) | 2016-02-23 |
CN102725850A (zh) | 2012-10-10 |
GB2489882A (en) | 2012-10-10 |
US20120171841A1 (en) | 2012-07-05 |
WO2011084397A2 (en) | 2011-07-14 |
DE112010004534T5 (de) | 2012-09-13 |
US20110163382A1 (en) | 2011-07-07 |
US8441071B2 (en) | 2013-05-14 |
WO2011084397A3 (en) | 2011-10-20 |
GB2489882B (en) | 2013-12-11 |
DE112010004534B4 (de) | 2015-08-27 |
CN102725850B (zh) | 2014-12-24 |
JP2013516762A (ja) | 2013-05-13 |
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