TW575966B - LED light-source with a lens - Google Patents
LED light-source with a lens Download PDFInfo
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- TW575966B TW575966B TW89107343A TW89107343A TW575966B TW 575966 B TW575966 B TW 575966B TW 89107343 A TW89107343 A TW 89107343A TW 89107343 A TW89107343 A TW 89107343A TW 575966 B TW575966 B TW 575966B
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- 239000000463 material Substances 0.000 claims abstract description 38
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 3
- 239000012780 transparent material Substances 0.000 claims abstract 6
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- 229920005989 resin Polymers 0.000 claims description 18
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- 229920001187 thermosetting polymer Polymers 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
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- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
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- 238000005507 spraying Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S362/00—Illumination
- Y10S362/80—Light emitting diode
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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Description
經濟部智慧財產局員工消費合作社印製 575966 A7 B7 五、發明說明(,) 本發明係關於一種依據申請專利範圍第1項前言之光 源。 在較早時期各LEDs是以GaN爲主(basis)發展而言, 利用GaN可產生藍光或紫外光。利用此種LEDs,各種光 源可以波長轉換爲基準而製成。一種已實現之槪念是: 由LED所發出之藍光之一部份可由一種適當之轉換材料 而轉換成黃光,這樣可由於原來藍光之與已轉換成之黃 光間之彩色混合作用而產生白色光。第二種槪念之設計 方式是:使適當之LED之紫外光轉換成見之頻譜區。 此種轉換材料在上述二種槪念中是包含在LED之半導 體材料中或包含在一種圍繞此LED之由樹脂或類似物所 構成之埋入式材料中。 爲了提高此種組件在光束方向中之光束強度,則此種 LED組件可設置一種光學透鏡,光線可經由此透鏡而聚 焦對準某一方向而發出。 此種構造形式之一種例子顯示在第1圖中。此圖中使 用一種LED造形,就像其在由F. M0llmer and G. Waitl 在 Zeitschrift Siemens Components 29( 1 99 1 ), Heft 4, page 147中與圖像1有關之文件” SIEMENS SMT-TOPLED fiir dieOberflachenmontage"中所述者一樣。此種形式之LED 是特別緊密的(compact)且情況需要時允許很多個此種 L E D s配置成許多列(r 〇 w)或矩陣形式。 在依據第1圖所示配置之此種SMT-TOPLED中,一種 LED 2以其電性接觸面安裝在導電帶5上,導電帶5是與 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -------^-------------訂、·---*----- (請先閱讀背面之注意事項再填寫本頁) 575966 經濟部智慧財產局員工消費合作社印製 A7 B7 i、發明說明(> ) 電壓源之一極相連接’而一與電壓源之另一極相連接之 相面對之導電帶5是經由連接線6而與LED 2之另一電 性接觸面相連接。此二個導電帶5是以一種抗高溫之熱 凝性塑膠噴鍍而成。因此可以噴鍍澆注法形成一種基體 1,此基體1中形成一個凹口 1A,此LED2設置在凹口 1 A內側。熱凝性塑膠較佳是具有大約9 0 %之較高之漫射 式反射率,使此種由L E D 2所發射之光線在輸出口方向 中另外可反射至凹口 1 A之傾斜之側壁。凹口 1 A中是以 透明之樹脂材料3 (例如,環氧樹脂)塡入,此種轉換材 料例如含有一種適當之顏料。樹脂材料和熱凝性塑膠須 小心地互相調整,因此在熱負載尖峰時亦不會造成機械 性之干擾。 在操作時由LED 2 (其以GaN或以Π -VI -化合物爲主 而製成)發出藍光或紫外光。在光線由LED 2至透鏡4 之路徑中,在含有該轉換材料之樹脂塡料3中此種已發 出之較短波長之光束有一部份轉換成波長較長之光束。 特別是在使用藍色LED時可使用一種轉換材料,藉此可 使至少一部份之藍色光束轉換成黃色光束。但此種造形 之間題是在此種以轉換材料塡入之樹脂塡料3中由LED 2至透鏡4時光束會有不同之路徑長度。這樣會使此組件 之邊緣區域中主要是由黃色主光束成份所佔用,而中央 部份則主要是存在著藍色之光束成份。此種效應因此會 造成所發射之光束有一種隨發射方向或觀察方向而改變 之彩色位置。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ----—I----------!訂 π —*----- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 575966 A7 ---------B7 五、發明說明(4 ) 其上之透鏡4中。 此種例如由聚合(ρ 〇 1 y )碳酸鹽所製成之透鏡4具有一種 凹形之表面4 A ’其是與樹脂塡料3之凸形表面3 a形成 正鎖定作用。 本發明在第2圖中所示之光源可以下述方式製成。 L E D 2以上述方式在電性上與導電帶5相連接且導電 帶5是以一種熱凝性塑膠材料來噴鍍,以便形成一種基 體1且L· E D 2存在於此基體丨之凹口 1 a中。就此而言本 方法已描述在上述Μ ϋ 1 1 m e r和W a i 11所發表之論文中。但 樹脂材料3在本例子中並不是塡至此凹口 1 a之邊緣而是 只塡至此邊緣下方之準確設定之塡充高度爲止。一種預 製之透鏡4 (其具有第2圖中所示之形式,其下側4 a是 凹开的)放入此種仍是流體之樹脂材料3中,樹脂塡料 之表面緊靠在透鏡4之凹形下側4A,使樹脂塡料3因此 可產生凸形表面3 A。在放入此透鏡4之後使樹脂塡料硬 化。 塡入凹口 1 A中之此種樹脂材料3之塡充量必須儘可能 準確地_整,使此種直至凹口 1 A邊緣所空出之體積等於 透鏡4之構成此凹形F側4A所需部份所排除之體積。 樹脂塡料3之凸形表面3 A以及透鏡4之凹形下側4 A 之形式在製造透鏡4時已確定。此種形式所需之條件是: 實際之光源(即’ L E D之活性之發光面)至上述這些表 面之距離是定値的。爲了此一目的,則此L E D之活性之 發光面可以點(point)形方式構成且這些點是設置在活性 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 讀--------訂 ---I---- (請先閱讀背面之注意事項再填寫本頁) 5?5966 A7 B7 1、發明說明(f) 發光面之中央。 但本發明不限於第2圖中所示之SMT造形,例如,基 體亦可由一種金屬方塊(例如,銅方塊)所構成,此種 銅方塊具有一個凹口,LED以其電性接觸面安裝在凹口 之底面上,使此銅方塊同時是一種熱吸收元件及電性終 端。另一電性終端可形成在銅方塊之外側表面上,此二 個電性終端之間設有一種隔離層,此一形成在外側表面 上之電性終端在樹脂塡入之前藉由連結線而與LED之另 一接觸面相連接。 符號說明 1…基體 1A…凹口 2…發光二極體 3…樹脂材料 4…透鏡 5…導電帶 3 A…凸形表面 4A···凹形表面 ----—^-----裝--------訂 V—-----*5^^- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)
Claims (1)
- 575966 y〇六、申請專利範圍 第891 07 343號「具有透鏡之LED-白色光源」專利案 (91年3月修正) 六申請專利範圍 1. 一種LED光源,其包括: 一至少一個LED(2), ——個具有凹口(1A)之基體(1),LED(2)配置於凹口(1A) 中, —一種由透明材料所構成之可埋設此LED(2)之塡料(3), 此塡料(3)中含有一種轉換物質使此種由LED(2)所發射 之光之至少一部份波長會被轉換, 一一種與塡料(3)相接觸之透鏡(4),其特徵爲: 一透鏡(4)具有凹形下側(4A)且施加在塡料(3)上, 一塡料(3)具有凸形表面(3A),使塡料(3)之上側可與透 鏡之凹形下側形成正鎖定。 2. 如申請專利範圍第1項之LED光源,其中塡料(3)之體積 小於凹α(1Α)之空著的體積,LED(2)配置於凹口(1A)中。 3. 如申請專利範圍第1或第2項之LED光源,其中形成此 塡料(3)之凸形表面(3A)和此透鏡(4)之下側(4A),它們至 LED(2)之距離基本上保持相同。 4·如申請專利範圍第1或第2項之LED光源,其中形成此 塡料(3)之凸形表面(3A)和此透鏡(4)之下側(4 A),它們至 LED(2)之活性發射面之幾何中點之距離基本上保持相 同。 5·如申請專利範圍第1或第2項之LED光源,其中LED(2) 575966 六、申請專利範圍 是一種以GaN爲主之發射藍色光之LED且設有一種轉換 物質使藍色頻譜區中之光束轉換成黃色頻譜區中之光 束。 6. 如申請專利範圍第1或§ 2項之1^0光源,其中1^0(2) 是一種發射紫外光(UV)之LED且該轉換物質使UV光線 轉換成可見之頻譜區中之光。 7. 如申請專利範圍第丄或2項之LED光源,其中須選取凸 形表面(3A)至LED(2)距離,特別是至LED(2)之活性發射 面之幾何中點之距離,使沿著光束之光學路徑長度之轉 換度基本上是50%。 8. 如申請專利範圍第j或2、項之LED光源,其中以表面安 裝技術製成此種光源。 9. 如申請專利範圍第丄或2„項之LED光源,其中該塡料(3) 含有一種樹脂材料,特別是環氧樹脂。 10·如申請專利範圍第5項之LED光源,其中該塡料(3)含有 一種樹脂材料,特別是環氧樹脂。 11.如申請專利範圍第」處2項之LED光源,其中基體(1)含 有一種熱凝性塑膠材料。 1Z如申請專利範圍第1或2項之LED光源,其中 — LED(2)以其電性接觸面安裝在第一導電帶(5)上, 一其另一電性接觸面經由連結線(6)而與第二導電帶(5)相 連接, 一基體(1)藉由噴鑛澆注法而在導電帶(5)周圍製成。 η如申請專利範圍莖1或2項之LED光源,其中凹口(ία) -2- 575966 六、申請專利範圍 之側壁是傾斜的且具有反射性。 14· 一種LED光源之製造方法,此LED光源是指申請專利範 圍第1至13項中任一項所述者,其特徵爲以下各步驟: 一在基體中形成一種具有平坦底面之凹口, 一在此底面上安裝一種LED, 一在凹口中塡入一定量之含有一種轉換材料之透明材料 (例如’樹脂材料), 一製備一種透鏡,其預製成具有一種凸形上側以及具有 一種凹形下側, 一使此透鏡以其凹形下側放入仍然是流體之此透明材料 中, 一使此透明之材料硬化。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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DE19918370A DE19918370B4 (de) | 1999-04-22 | 1999-04-22 | LED-Weißlichtquelle mit Linse |
Publications (1)
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TW575966B true TW575966B (en) | 2004-02-11 |
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TW89107343A TW575966B (en) | 1999-04-22 | 2000-04-19 | LED light-source with a lens |
Country Status (6)
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US (4) | US6759803B2 (zh) |
JP (1) | JP5100926B2 (zh) |
CN (4) | CN100452462C (zh) |
DE (1) | DE19918370B4 (zh) |
TW (1) | TW575966B (zh) |
WO (1) | WO2000065664A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI381935B (zh) * | 2005-04-26 | 2013-01-11 | Osram Opto Semiconductors Gmbh | 光學元件,含有該光學元件之光電組件及其製程 |
US8558446B2 (en) | 2005-02-18 | 2013-10-15 | Nichia Corporation | Light emitting device provided with lens for controlling light distribution characteristic |
Families Citing this family (174)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19918370B4 (de) * | 1999-04-22 | 2006-06-08 | Osram Opto Semiconductors Gmbh | LED-Weißlichtquelle mit Linse |
DE10020465A1 (de) * | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement |
DE10023353A1 (de) | 2000-05-12 | 2001-11-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung |
JP3956647B2 (ja) | 2001-05-25 | 2007-08-08 | セイコーエプソン株式会社 | 面発光レ−ザの製造方法 |
DE10129785B4 (de) * | 2001-06-20 | 2010-03-18 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
DE10142009B4 (de) * | 2001-08-28 | 2010-04-22 | Osram Opto Semiconductors Gmbh | LED - Lichtquelle mit einem Konversionsmittel und mit einer UV-absorbierenden Schicht |
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- 2000-04-07 WO PCT/DE2000/001079 patent/WO2000065664A1/de active Application Filing
- 2000-04-07 CN CNB200610101194XA patent/CN100452461C/zh not_active Expired - Lifetime
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- 2000-04-07 JP JP2000614512A patent/JP5100926B2/ja not_active Expired - Fee Related
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US8558446B2 (en) | 2005-02-18 | 2013-10-15 | Nichia Corporation | Light emitting device provided with lens for controlling light distribution characteristic |
TWI419375B (zh) * | 2005-02-18 | 2013-12-11 | Nichia Corp | 具備控制配光特性用之透鏡之發光裝置 |
US8836210B2 (en) | 2005-02-18 | 2014-09-16 | Nichia Corporation | Light emitting device provided with lens for controlling light distribution characteristic |
US9093619B2 (en) | 2005-02-18 | 2015-07-28 | Nichia Corporation | Light emitting device provided with lens for controlling light distribution characteristic |
TWI381935B (zh) * | 2005-04-26 | 2013-01-11 | Osram Opto Semiconductors Gmbh | 光學元件,含有該光學元件之光電組件及其製程 |
Also Published As
Publication number | Publication date |
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US6746295B2 (en) | 2004-06-08 |
CN1881636A (zh) | 2006-12-20 |
CN100452461C (zh) | 2009-01-14 |
CN1881635A (zh) | 2006-12-20 |
US7126273B2 (en) | 2006-10-24 |
US7594840B2 (en) | 2009-09-29 |
CN1645638A (zh) | 2005-07-27 |
CN100452462C (zh) | 2009-01-14 |
DE19918370A1 (de) | 2000-11-02 |
WO2000065664A1 (de) | 2000-11-02 |
US20040232825A1 (en) | 2004-11-25 |
US20030211804A1 (en) | 2003-11-13 |
DE19918370B4 (de) | 2006-06-08 |
US20070010157A1 (en) | 2007-01-11 |
CN100555681C (zh) | 2009-10-28 |
JP2002543594A (ja) | 2002-12-17 |
CN1196204C (zh) | 2005-04-06 |
CN1348608A (zh) | 2002-05-08 |
JP5100926B2 (ja) | 2012-12-19 |
US20020057057A1 (en) | 2002-05-16 |
US6759803B2 (en) | 2004-07-06 |
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