TW573213B - Photoresist composition for deep UV radiation - Google Patents
Photoresist composition for deep UV radiation Download PDFInfo
- Publication number
- TW573213B TW573213B TW89124774A TW89124774A TW573213B TW 573213 B TW573213 B TW 573213B TW 89124774 A TW89124774 A TW 89124774A TW 89124774 A TW89124774 A TW 89124774A TW 573213 B TW573213 B TW 573213B
- Authority
- TW
- Taiwan
- Prior art keywords
- photoresist
- item
- photoresist composition
- patent application
- group
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 124
- 239000000203 mixture Substances 0.000 title claims abstract description 52
- 230000005855 radiation Effects 0.000 title description 11
- 229920000642 polymer Polymers 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 26
- 150000001875 compounds Chemical class 0.000 claims abstract description 21
- 230000008569 process Effects 0.000 claims abstract description 19
- -1 iodonium compound Chemical class 0.000 claims abstract description 16
- 239000002904 solvent Substances 0.000 claims abstract description 10
- 238000003384 imaging method Methods 0.000 claims abstract description 6
- 150000007514 bases Chemical class 0.000 claims abstract description 5
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium group Chemical group [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 claims abstract 2
- 239000000243 solution Substances 0.000 claims description 48
- 239000002253 acid Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 29
- 125000000217 alkyl group Chemical group 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 125000003118 aryl group Chemical group 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- CRCTVNZEEIPCLD-UHFFFAOYSA-N trimethylphosphanium;hydroxide Chemical compound O.CP(C)C CRCTVNZEEIPCLD-UHFFFAOYSA-N 0.000 claims description 8
- 125000002723 alicyclic group Chemical group 0.000 claims description 6
- 239000002585 base Substances 0.000 claims description 6
- 125000003107 substituted aryl group Chemical group 0.000 claims description 6
- 229910052783 alkali metal Inorganic materials 0.000 claims description 5
- 150000001340 alkali metals Chemical class 0.000 claims description 5
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 claims description 5
- 150000001450 anions Chemical class 0.000 claims description 4
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 125000001072 heteroaryl group Chemical group 0.000 claims description 4
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 4
- 206010034972 Photosensitivity reaction Diseases 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 230000036211 photosensitivity Effects 0.000 claims description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- 239000004615 ingredient Substances 0.000 claims description 2
- 150000002178 europium compounds Chemical class 0.000 claims 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims 1
- VCCPPDBHPDQSNT-UHFFFAOYSA-N dimethylphosphanium hydroxide Chemical compound [OH-].C[PH2+]C VCCPPDBHPDQSNT-UHFFFAOYSA-N 0.000 claims 1
- YZAYHVQTYLESRA-UHFFFAOYSA-N diphenylphosphanium hydroxide Chemical compound [OH-].[PH2+](c1ccccc1)c1ccccc1 YZAYHVQTYLESRA-UHFFFAOYSA-N 0.000 claims 1
- 229960000304 folic acid Drugs 0.000 claims 1
- 239000011724 folic acid Substances 0.000 claims 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical class I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000000178 monomer Substances 0.000 claims 1
- ICBQNKQWOYQWLF-UHFFFAOYSA-N triphenylphosphane;hydrate Chemical compound O.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 ICBQNKQWOYQWLF-UHFFFAOYSA-N 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 3
- 239000000356 contaminant Substances 0.000 abstract description 2
- 230000002411 adverse Effects 0.000 abstract 1
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 22
- 239000010408 film Substances 0.000 description 20
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 15
- 229940116333 ethyl lactate Drugs 0.000 description 11
- 150000004714 phosphonium salts Chemical class 0.000 description 11
- 230000035945 sensitivity Effects 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 125000001931 aliphatic group Chemical group 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 238000011161 development Methods 0.000 description 9
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000007787 solid Substances 0.000 description 7
- 239000000654 additive Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 239000004094 surface-active agent Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- FUGYGGDSWSUORM-UHFFFAOYSA-N 4-hydroxystyrene Chemical compound OC1=CC=C(C=C)C=C1 FUGYGGDSWSUORM-UHFFFAOYSA-N 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000003321 amplification Effects 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 229940017219 methyl propionate Drugs 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- VOUZEQWYRVLLGJ-UHFFFAOYSA-N C=1C=CC=CC=1[SH+]C1=CC=CC=C1.[O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F Chemical compound C=1C=CC=CC=1[SH+]C1=CC=CC=C1.[O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F VOUZEQWYRVLLGJ-UHFFFAOYSA-N 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000006386 neutralization reaction Methods 0.000 description 3
- 150000002907 osmium Chemical class 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 239000005076 polymer ester Substances 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- REPVLJRCJUVQFA-UHFFFAOYSA-N (-)-isopinocampheol Natural products C1C(O)C(C)C2C(C)(C)C1C2 REPVLJRCJUVQFA-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- RJUFJBKOKNCXHH-UHFFFAOYSA-N Methyl propionate Chemical compound CCC(=O)OC RJUFJBKOKNCXHH-UHFFFAOYSA-N 0.000 description 2
- 206010034960 Photophobia Diseases 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 150000001491 aromatic compounds Chemical class 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229940116229 borneol Drugs 0.000 description 2
- CKDOCTFBFTVPSN-UHFFFAOYSA-N borneol Natural products C1CC2(C)C(C)CC1C2(C)C CKDOCTFBFTVPSN-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- DTGKSKDOIYIVQL-UHFFFAOYSA-N dl-isoborneol Natural products C1CC2(C)C(O)CC1C2(C)C DTGKSKDOIYIVQL-UHFFFAOYSA-N 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- RMBPEFMHABBEKP-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2C3=C[CH]C=CC3=CC2=C1 RMBPEFMHABBEKP-UHFFFAOYSA-N 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 208000013469 light sensitivity Diseases 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000003504 photosensitizing agent Substances 0.000 description 2
- 239000002952 polymeric resin Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 2
- KJTLQQUUPVSXIM-ZCFIWIBFSA-N (R)-mevalonic acid Chemical compound OCC[C@](O)(C)CC(O)=O KJTLQQUUPVSXIM-ZCFIWIBFSA-N 0.000 description 1
- VHEGZXGUZLXUMA-UHFFFAOYSA-N 1,1,1,2,2,3,3,4,4-nonafluorobutane phenylsulfanylbenzene Chemical compound FC(C(C(C(F)(F)F)(F)F)(F)F)F.C(C=C1)=CC=C1SC1=CC=CC=C1 VHEGZXGUZLXUMA-UHFFFAOYSA-N 0.000 description 1
- GORQVPUMKSLUKN-UHFFFAOYSA-N 1,1,1,2,2,3,3,4,4-nonafluorobutane;triphenylsulfanium Chemical compound FC(F)C(F)(F)C(F)(F)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 GORQVPUMKSLUKN-UHFFFAOYSA-N 0.000 description 1
- VLLPVDKADBYKLM-UHFFFAOYSA-M 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate;triphenylsulfanium Chemical compound [O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 VLLPVDKADBYKLM-UHFFFAOYSA-M 0.000 description 1
- IAPRPQQYWNMCRH-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonic acid 1-phenyl-9H-fluorene Chemical compound FC(C(C(C(S(=O)(=O)O)(F)F)(F)F)(F)F)(F)F.C1(=CC=CC=C1)C1=CC=CC=2C3=CC=CC=C3CC12 IAPRPQQYWNMCRH-UHFFFAOYSA-N 0.000 description 1
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- VMPLBSIQOYSLQF-UHFFFAOYSA-N 2-methoxyethyl acetate;propane-1,2-diol Chemical compound CC(O)CO.COCCOC(C)=O VMPLBSIQOYSLQF-UHFFFAOYSA-N 0.000 description 1
- ZPSJGADGUYYRKE-UHFFFAOYSA-N 2H-pyran-2-one Chemical class O=C1C=CC=CO1 ZPSJGADGUYYRKE-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- CMJCIYNTDBUZHX-UHFFFAOYSA-M C1(=CC=CC=C1)[S+](C1=CC=CC=C1)C1=CC=CC=C1.FC(S(=O)(=O)[O-])F Chemical compound C1(=CC=CC=C1)[S+](C1=CC=CC=C1)C1=CC=CC=C1.FC(S(=O)(=O)[O-])F CMJCIYNTDBUZHX-UHFFFAOYSA-M 0.000 description 1
- 101100435268 Caenorhabditis elegans arf-1.2 gene Proteins 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- KJTLQQUUPVSXIM-UHFFFAOYSA-N DL-mevalonic acid Natural products OCCC(O)(C)CC(O)=O KJTLQQUUPVSXIM-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 1
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 1
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- KCCAUYBVDBBTKH-UHFFFAOYSA-N S(=O)(=O)(O)C(C1=CC=CC=2C3=CC=CC=C3CC12)S(=O)(=O)O Chemical compound S(=O)(=O)(O)C(C1=CC=CC=2C3=CC=CC=C3CC12)S(=O)(=O)O KCCAUYBVDBBTKH-UHFFFAOYSA-N 0.000 description 1
- JJCGNZXQWADFJT-UHFFFAOYSA-N S(=O)(=O)(O)C=1C(=C(C=2CC3=CC=CC=C3C2C1)C=[N+]=[N-])S(=O)(=O)O Chemical compound S(=O)(=O)(O)C=1C(=C(C=2CC3=CC=CC=C3C2C1)C=[N+]=[N-])S(=O)(=O)O JJCGNZXQWADFJT-UHFFFAOYSA-N 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- 239000004098 Tetracycline Substances 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- UGAPHEBNTGUMBB-UHFFFAOYSA-N acetic acid;ethyl acetate Chemical compound CC(O)=O.CCOC(C)=O UGAPHEBNTGUMBB-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001447 alkali salts Chemical class 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229940072049 amyl acetate Drugs 0.000 description 1
- PGMYKACGEOXYJE-UHFFFAOYSA-N anhydrous amyl acetate Natural products CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 description 1
- RBFDCQDDCJFGIK-UHFFFAOYSA-N arsenic germanium Chemical compound [Ge].[As] RBFDCQDDCJFGIK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-M benzenesulfonate Chemical compound [O-]S(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-M 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 229940043232 butyl acetate Drugs 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 description 1
- 239000012954 diazonium Substances 0.000 description 1
- 150000001989 diazonium salts Chemical class 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- LIPIURJJRUOGSS-UHFFFAOYSA-N dodecyl hydrogen carbonate Chemical class CCCCCCCCCCCCOC(O)=O LIPIURJJRUOGSS-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000004992 fission Effects 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 229930195712 glutamate Natural products 0.000 description 1
- MNWFXJYAOYHMED-UHFFFAOYSA-M heptanoate Chemical compound CCCCCCC([O-])=O MNWFXJYAOYHMED-UHFFFAOYSA-M 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002506 iron compounds Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000005397 methacrylic acid ester group Chemical group 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- IYYMDGDZPDXTGT-UHFFFAOYSA-N perylene-1,2-dione Chemical compound C1=CC(C2=C3C(=CC(C2=O)=O)C=CC=C32)=C3C2=CC=CC3=C1 IYYMDGDZPDXTGT-UHFFFAOYSA-N 0.000 description 1
- RPGWZZNNEUHDAQ-UHFFFAOYSA-N phenylphosphine Chemical class PC1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-N 0.000 description 1
- 230000002165 photosensitisation Effects 0.000 description 1
- IUGYQRQAERSCNH-UHFFFAOYSA-N pivalic acid Chemical compound CC(C)(C)C(O)=O IUGYQRQAERSCNH-UHFFFAOYSA-N 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 244000011919 rambutan Species 0.000 description 1
- 235000007861 rambutan Nutrition 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 238000007152 ring opening metathesis polymerisation reaction Methods 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011877 solvent mixture Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 239000012085 test solution Substances 0.000 description 1
- 229920006029 tetra-polymer Polymers 0.000 description 1
- 229960002180 tetracycline Drugs 0.000 description 1
- 229930101283 tetracycline Natural products 0.000 description 1
- 235000019364 tetracycline Nutrition 0.000 description 1
- 125000003831 tetrazolyl group Chemical group 0.000 description 1
- 238000004227 thermal cracking Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000001550 time effect Effects 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-M valerate Chemical class CCCCC([O-])=O NQPDZGIKBAWPEJ-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/455,872 US6365322B1 (en) | 1999-12-07 | 1999-12-07 | Photoresist composition for deep UV radiation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW573213B true TW573213B (en) | 2004-01-21 |
Family
ID=23810591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW89124774A TW573213B (en) | 1999-12-07 | 2000-11-22 | Photoresist composition for deep UV radiation |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6365322B1 (enExample) |
| EP (1) | EP1240553B1 (enExample) |
| JP (1) | JP4629944B2 (enExample) |
| KR (1) | KR100705373B1 (enExample) |
| CN (1) | CN1203373C (enExample) |
| AT (1) | ATE434202T1 (enExample) |
| DE (1) | DE60042422D1 (enExample) |
| MY (1) | MY125946A (enExample) |
| TW (1) | TW573213B (enExample) |
| WO (1) | WO2001042853A2 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3509760B2 (ja) * | 2001-02-08 | 2004-03-22 | 株式会社半導体先端テクノロジーズ | 半導体装置の製造方法 |
| US6586560B1 (en) * | 2001-09-18 | 2003-07-01 | Microchem Corp. | Alkaline soluble maleimide-containing polymers |
| US7070914B2 (en) * | 2002-01-09 | 2006-07-04 | Az Electronic Materials Usa Corp. | Process for producing an image using a first minimum bottom antireflective coating composition |
| US20030215736A1 (en) * | 2002-01-09 | 2003-11-20 | Oberlander Joseph E. | Negative-working photoimageable bottom antireflective coating |
| US7214465B2 (en) | 2002-01-10 | 2007-05-08 | Fujifilm Corporation | Positive photosensitive composition |
| WO2003073169A2 (en) * | 2002-02-21 | 2003-09-04 | Honeywell International Inc. | Fluorinated molecules and methods of making and using same |
| WO2003095505A1 (en) * | 2002-05-07 | 2003-11-20 | Honeywell International Inc. | Fluorinated polymers |
| US7208249B2 (en) * | 2002-09-30 | 2007-04-24 | Applied Materials, Inc. | Method of producing a patterned photoresist used to prepare high performance photomasks |
| US20040091813A1 (en) * | 2002-11-05 | 2004-05-13 | Honeywell International Inc. | Fluorinated polymers |
| US7358408B2 (en) * | 2003-05-16 | 2008-04-15 | Az Electronic Materials Usa Corp. | Photoactive compounds |
| KR100586165B1 (ko) * | 2003-12-30 | 2006-06-07 | 동부일렉트로닉스 주식회사 | 바닥 반사 방지 코팅 방법 |
| US7473512B2 (en) * | 2004-03-09 | 2009-01-06 | Az Electronic Materials Usa Corp. | Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof |
| KR100887202B1 (ko) * | 2004-04-27 | 2009-03-06 | 도오꾜오까고오교 가부시끼가이샤 | 액침 노광 프로세스용 레지스트 보호막 형성용 재료, 및 이보호막을 이용한 레지스트 패턴 형성 방법 |
| US20060008731A1 (en) * | 2004-07-09 | 2006-01-12 | Michael Van Der Puy | Novel photoresist monomers and polymers |
| US20060008730A1 (en) * | 2004-07-09 | 2006-01-12 | Puy Michael V D | Monomers for photoresists bearing acid-labile groups of reduced optical density |
| JP4368267B2 (ja) * | 2004-07-30 | 2009-11-18 | 東京応化工業株式会社 | レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法 |
| US7595141B2 (en) * | 2004-10-26 | 2009-09-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
| JP4830442B2 (ja) * | 2005-10-19 | 2011-12-07 | Ｊｓｒ株式会社 | ポジ型感放射線性樹脂組成物 |
| JP4890153B2 (ja) * | 2006-08-11 | 2012-03-07 | 東京応化工業株式会社 | レジスト組成物およびレジストパターン形成方法 |
| US7923200B2 (en) * | 2007-04-09 | 2011-04-12 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern comprising a lactam |
| JP5069494B2 (ja) * | 2007-05-01 | 2012-11-07 | ＡｚエレクトロニックマテリアルズＩｐ株式会社 | 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法 |
| JP5401051B2 (ja) * | 2008-05-12 | 2014-01-29 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法および新規な化合物 |
| US7745077B2 (en) | 2008-06-18 | 2010-06-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
| US20100136477A1 (en) * | 2008-12-01 | 2010-06-03 | Ng Edward W | Photosensitive Composition |
| US8614047B2 (en) | 2011-08-26 | 2013-12-24 | International Business Machines Corporation | Photodecomposable bases and photoresist compositions |
| CN103012227A (zh) * | 2013-01-04 | 2013-04-03 | 同济大学 | 一种高光生酸量子产率硫鎓盐类光生酸剂、制备方法及其应用 |
| CN113717314B (zh) * | 2021-08-26 | 2023-09-22 | 江苏集萃光敏电子材料研究所有限公司 | 一种光敏成膜树脂、光刻胶组合物及其制备方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4491628A (en) | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
| EP0440374B1 (en) | 1990-01-30 | 1997-04-16 | Wako Pure Chemical Industries Ltd | Chemical amplified resist material |
| KR100355254B1 (en) | 1993-02-15 | 2003-03-31 | Clariant Finance Bvi Ltd | Positive type radiation-sensitive mixture |
| US5663035A (en) | 1994-04-13 | 1997-09-02 | Hoechst Japan Limited | Radiation-sensitive mixture comprising a basic iodonium compound |
| US5466653A (en) * | 1994-06-29 | 1995-11-14 | E. I. Du Pont De Nemours And Company | Method for preparing negative-working wash-off relief images and non-photosensitive elements for use therein |
| US5523453A (en) | 1995-03-22 | 1996-06-04 | E. I. Du Pont De Nemours And Company | Process for hydrocyanation |
| JPH08262720A (ja) | 1995-03-28 | 1996-10-11 | Hoechst Ind Kk | 可塑剤を含む放射線感応性組成物 |
| JP3804138B2 (ja) | 1996-02-09 | 2006-08-02 | Ｊｓｒ株式会社 | ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物 |
| JP3962432B2 (ja) | 1996-03-07 | 2007-08-22 | 住友ベークライト株式会社 | 酸不安定ペンダント基を持つ多環式ポリマーからなるフォトレジスト組成物 |
| US5843624A (en) | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
| US5879857A (en) | 1997-02-21 | 1999-03-09 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
| JP3808140B2 (ja) * | 1996-09-10 | 2006-08-09 | Ａｚエレクトロニックマテリアルズ株式会社 | 新規酸感応性基で保護されたヒドロキシスチレン重合体およびこれらを含む放射線感応性材料 |
| KR100265597B1 (ko) | 1996-12-30 | 2000-09-15 | 김영환 | Arf 감광막 수지 및 그 제조방법 |
| KR100551653B1 (ko) | 1997-08-18 | 2006-05-25 | 제이에스알 가부시끼가이샤 | 감방사선성수지조성물 |
| JP3676918B2 (ja) * | 1997-10-09 | 2005-07-27 | 富士通株式会社 | レジスト材料及びレジストパターンの形成方法 |
| KR100321080B1 (ko) | 1997-12-29 | 2002-11-22 | 주식회사 하이닉스반도체 | 공중합체수지와이의제조방법및이수지를이용한포토레지스트 |
| KR100292406B1 (ko) * | 1998-06-11 | 2001-07-12 | 윤종용 | 감광성중합체,용해억제제및이들을포함하는화학증폭형포토레지스트조성물 |
| NL1010155C1 (nl) | 1998-09-23 | 2000-03-24 | Albertus Wolbers | Raambedekking. |
| KR100271419B1 (ko) * | 1998-09-23 | 2001-03-02 | 박찬구 | 화학증폭형 레지스트 제조용 중합체 및 이를 함유하는 레지스트조성물 |
-
1999
- 1999-12-07 US US09/455,872 patent/US6365322B1/en not_active Expired - Lifetime
-
2000
- 2000-11-18 EP EP00981273A patent/EP1240553B1/en not_active Expired - Lifetime
- 2000-11-18 AT AT00981273T patent/ATE434202T1/de not_active IP Right Cessation
- 2000-11-18 DE DE60042422T patent/DE60042422D1/de not_active Expired - Lifetime
- 2000-11-18 WO PCT/EP2000/011495 patent/WO2001042853A2/en not_active Ceased
- 2000-11-18 JP JP2001544083A patent/JP4629944B2/ja not_active Expired - Fee Related
- 2000-11-18 CN CNB008167796A patent/CN1203373C/zh not_active Expired - Fee Related
- 2000-11-18 KR KR1020027007254A patent/KR100705373B1/ko not_active Expired - Fee Related
- 2000-11-22 TW TW89124774A patent/TW573213B/zh not_active IP Right Cessation
- 2000-12-05 MY MYPI20005711A patent/MY125946A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003524799A (ja) | 2003-08-19 |
| KR20030023604A (ko) | 2003-03-19 |
| EP1240553A2 (en) | 2002-09-18 |
| CN1203373C (zh) | 2005-05-25 |
| ATE434202T1 (de) | 2009-07-15 |
| US6365322B1 (en) | 2002-04-02 |
| WO2001042853A2 (en) | 2001-06-14 |
| WO2001042853A3 (en) | 2002-05-02 |
| MY125946A (en) | 2006-09-29 |
| JP4629944B2 (ja) | 2011-02-09 |
| EP1240553B1 (en) | 2009-06-17 |
| KR100705373B1 (ko) | 2007-04-11 |
| CN1408077A (zh) | 2003-04-02 |
| DE60042422D1 (de) | 2009-07-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW573213B (en) | Photoresist composition for deep UV radiation | |
| US5272042A (en) | Positive photoresist system for near-UV to visible imaging | |
| US6447980B1 (en) | Photoresist composition for deep UV and process thereof | |
| US6723488B2 (en) | Photoresist composition for deep UV radiation containing an additive | |
| US6900001B2 (en) | Method for modifying resist images by electron beam exposure | |
| TW200301847A (en) | Positive-working photoimageable bottom antireflective coating | |
| TWI516872B (zh) | 適於與上塗光阻倂用之塗覆組成物 | |
| WO2001063360A2 (en) | Encapsulated inorganic resists | |
| US6235448B1 (en) | Photoresist monomers, polymers thereof, and photoresist compositions containing the same | |
| TW200304582A (en) | Negative deep ultraviolet photoresist | |
| KR20070007067A (ko) | 포토레지스트 조성물 | |
| US6699645B2 (en) | Method for the formation of resist patterns | |
| TWI385487B (zh) | 光阻劑組合物 | |
| KR20000055772A (ko) | 신규의 포토레지스트 가교제 및 이를 이용한 포토레지스트 조성물 | |
| CN1478220A (zh) | 化学增强的正型辐射敏感树脂组合物 | |
| US6641971B2 (en) | Resist compositions comprising silyl ketals and methods of use thereof | |
| HK1049888A1 (zh) | 用於光刻膠的抗反射塗料 | |
| KR100236840B1 (ko) | 가교형 광산발생제를 함유하는 포토레지스트 조성물 | |
| US6989227B2 (en) | E-beam curable resist and process for e-beam curing the resist | |
| JP7624532B2 (ja) | レジスト用途における光酸発生剤としてのオキサチアニウムイオン含有スルホン酸誘導体化合物 | |
| JP2007505362A (ja) | 深紫外線用のフォトレジスト組成物及びそれの製法 | |
| JPH08305031A (ja) | 化学増幅型レジスト用保護膜材料 | |
| HK1053518A (en) | Photoresist composition for deep uv radiation | |
| JPH05127386A (ja) | 感光性組成物 | |
| HK1057618A (en) | Photoresist composition for deep uv and process thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |