MY125946A - Photoresist composition for deep uv radiation - Google Patents

Photoresist composition for deep uv radiation

Info

Publication number
MY125946A
MY125946A MYPI20005711A MYPI20005711A MY125946A MY 125946 A MY125946 A MY 125946A MY PI20005711 A MYPI20005711 A MY PI20005711A MY PI20005711 A MYPI20005711 A MY PI20005711A MY 125946 A MY125946 A MY 125946A
Authority
MY
Malaysia
Prior art keywords
photoresist
deep
radiation
compound
photoresist composition
Prior art date
Application number
MYPI20005711A
Other languages
English (en)
Inventor
Munirathna Padmanaban
Ralph R Dammel
Original Assignee
Az Electronic Materials Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Japan filed Critical Az Electronic Materials Japan
Publication of MY125946A publication Critical patent/MY125946A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
MYPI20005711A 1999-12-07 2000-12-05 Photoresist composition for deep uv radiation MY125946A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/455,872 US6365322B1 (en) 1999-12-07 1999-12-07 Photoresist composition for deep UV radiation

Publications (1)

Publication Number Publication Date
MY125946A true MY125946A (en) 2006-09-29

Family

ID=23810591

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20005711A MY125946A (en) 1999-12-07 2000-12-05 Photoresist composition for deep uv radiation

Country Status (10)

Country Link
US (1) US6365322B1 (enExample)
EP (1) EP1240553B1 (enExample)
JP (1) JP4629944B2 (enExample)
KR (1) KR100705373B1 (enExample)
CN (1) CN1203373C (enExample)
AT (1) ATE434202T1 (enExample)
DE (1) DE60042422D1 (enExample)
MY (1) MY125946A (enExample)
TW (1) TW573213B (enExample)
WO (1) WO2001042853A2 (enExample)

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JP3509760B2 (ja) * 2001-02-08 2004-03-22 株式会社半導体先端テクノロジーズ 半導体装置の製造方法
US6586560B1 (en) * 2001-09-18 2003-07-01 Microchem Corp. Alkaline soluble maleimide-containing polymers
US7070914B2 (en) * 2002-01-09 2006-07-04 Az Electronic Materials Usa Corp. Process for producing an image using a first minimum bottom antireflective coating composition
US20030215736A1 (en) * 2002-01-09 2003-11-20 Oberlander Joseph E. Negative-working photoimageable bottom antireflective coating
US7214465B2 (en) 2002-01-10 2007-05-08 Fujifilm Corporation Positive photosensitive composition
WO2003073169A2 (en) * 2002-02-21 2003-09-04 Honeywell International Inc. Fluorinated molecules and methods of making and using same
WO2003095505A1 (en) * 2002-05-07 2003-11-20 Honeywell International Inc. Fluorinated polymers
US7208249B2 (en) * 2002-09-30 2007-04-24 Applied Materials, Inc. Method of producing a patterned photoresist used to prepare high performance photomasks
US20040091813A1 (en) * 2002-11-05 2004-05-13 Honeywell International Inc. Fluorinated polymers
US7358408B2 (en) * 2003-05-16 2008-04-15 Az Electronic Materials Usa Corp. Photoactive compounds
KR100586165B1 (ko) * 2003-12-30 2006-06-07 동부일렉트로닉스 주식회사 바닥 반사 방지 코팅 방법
US7473512B2 (en) * 2004-03-09 2009-01-06 Az Electronic Materials Usa Corp. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
KR100887202B1 (ko) * 2004-04-27 2009-03-06 도오꾜오까고오교 가부시끼가이샤 액침 노광 프로세스용 레지스트 보호막 형성용 재료, 및 이보호막을 이용한 레지스트 패턴 형성 방법
US20060008731A1 (en) * 2004-07-09 2006-01-12 Michael Van Der Puy Novel photoresist monomers and polymers
US20060008730A1 (en) * 2004-07-09 2006-01-12 Puy Michael V D Monomers for photoresists bearing acid-labile groups of reduced optical density
JP4368267B2 (ja) * 2004-07-30 2009-11-18 東京応化工業株式会社 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
US7595141B2 (en) * 2004-10-26 2009-09-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
JP4830442B2 (ja) * 2005-10-19 2011-12-07 Ｊｓｒ株式会社 ポジ型感放射線性樹脂組成物
JP4890153B2 (ja) * 2006-08-11 2012-03-07 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
US7923200B2 (en) * 2007-04-09 2011-04-12 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern comprising a lactam
JP5069494B2 (ja) * 2007-05-01 2012-11-07 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法
JP5401051B2 (ja) * 2008-05-12 2014-01-29 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法および新規な化合物
US7745077B2 (en) 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
US20100136477A1 (en) * 2008-12-01 2010-06-03 Ng Edward W Photosensitive Composition
US8614047B2 (en) 2011-08-26 2013-12-24 International Business Machines Corporation Photodecomposable bases and photoresist compositions
CN103012227A (zh) * 2013-01-04 2013-04-03 同济大学 一种高光生酸量子产率硫鎓盐类光生酸剂、制备方法及其应用
CN113717314B (zh) * 2021-08-26 2023-09-22 江苏集萃光敏电子材料研究所有限公司 一种光敏成膜树脂、光刻胶组合物及其制备方法

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US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
EP0440374B1 (en) 1990-01-30 1997-04-16 Wako Pure Chemical Industries Ltd Chemical amplified resist material
KR100355254B1 (en) 1993-02-15 2003-03-31 Clariant Finance Bvi Ltd Positive type radiation-sensitive mixture
US5663035A (en) 1994-04-13 1997-09-02 Hoechst Japan Limited Radiation-sensitive mixture comprising a basic iodonium compound
US5466653A (en) * 1994-06-29 1995-11-14 E. I. Du Pont De Nemours And Company Method for preparing negative-working wash-off relief images and non-photosensitive elements for use therein
US5523453A (en) 1995-03-22 1996-06-04 E. I. Du Pont De Nemours And Company Process for hydrocyanation
JPH08262720A (ja) 1995-03-28 1996-10-11 Hoechst Ind Kk 可塑剤を含む放射線感応性組成物
JP3804138B2 (ja) 1996-02-09 2006-08-02 Ｊｓｒ株式会社 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
JP3962432B2 (ja) 1996-03-07 2007-08-22 住友ベークライト株式会社 酸不安定ペンダント基を持つ多環式ポリマーからなるフォトレジスト組成物
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US5879857A (en) 1997-02-21 1999-03-09 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
JP3808140B2 (ja) * 1996-09-10 2006-08-09 Ａｚエレクトロニックマテリアルズ株式会社 新規酸感応性基で保護されたヒドロキシスチレン重合体およびこれらを含む放射線感応性材料
KR100265597B1 (ko) 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
KR100551653B1 (ko) 1997-08-18 2006-05-25 제이에스알 가부시끼가이샤 감방사선성수지조성물
JP3676918B2 (ja) * 1997-10-09 2005-07-27 富士通株式会社 レジスト材料及びレジストパターンの形成方法
KR100321080B1 (ko) 1997-12-29 2002-11-22 주식회사 하이닉스반도체 공중합체수지와이의제조방법및이수지를이용한포토레지스트
KR100292406B1 (ko) * 1998-06-11 2001-07-12 윤종용 감광성중합체,용해억제제및이들을포함하는화학증폭형포토레지스트조성물
NL1010155C1 (nl) 1998-09-23 2000-03-24 Albertus Wolbers Raambedekking.
KR100271419B1 (ko) * 1998-09-23 2001-03-02 박찬구 화학증폭형 레지스트 제조용 중합체 및 이를 함유하는 레지스트조성물

Also Published As

Publication number Publication date
JP2003524799A (ja) 2003-08-19
KR20030023604A (ko) 2003-03-19
EP1240553A2 (en) 2002-09-18
CN1203373C (zh) 2005-05-25
ATE434202T1 (de) 2009-07-15
US6365322B1 (en) 2002-04-02
WO2001042853A2 (en) 2001-06-14
WO2001042853A3 (en) 2002-05-02
JP4629944B2 (ja) 2011-02-09
TW573213B (en) 2004-01-21
EP1240553B1 (en) 2009-06-17
KR100705373B1 (ko) 2007-04-11
CN1408077A (zh) 2003-04-02
DE60042422D1 (de) 2009-07-30

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