TW571478B - Voltage limiting protection for high frequency power device - Google Patents

Voltage limiting protection for high frequency power device Download PDF

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TW571478B
TW571478B TW091115533A TW91115533A TW571478B TW 571478 B TW571478 B TW 571478B TW 091115533 A TW091115533 A TW 091115533A TW 91115533 A TW91115533 A TW 91115533A TW 571478 B TW571478 B TW 571478B
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patent application
capacitor
power transistor
voltage
limiting device
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TW091115533A
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Kenneth P Brewer
Howard D Bartlow
Johan A Darmawan
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Cree Microwave Inc
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    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H01L2223/6655—Matching arrangements, e.g. arrangement of inductive and capacitive components
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48195—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being a discrete passive component
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    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)

Description

571478 五、發明説明（1 ) 發明背景 本發明係關於一般高電源 〇 , τ电Γ生裝置，更明確的說，本發 明係關於半導體電源裝置中 ， 電反限制及靜電放電保護。 黾源半導體裝置’如Mesfet弋你酱认山 Τ或作業於兩頻之下的雙極性 電日日體之類，通常都會連 電今性裝置，如分離式 MOSCAP ’作為輸入頻率及 ι 午阻抗匹配。该分離式MOSCAP裝 置係與該半導體電晶體晶片安裝於半導體封裝内，並且利 用適當的裝置’如焊接線路之類，與其相連接。 ^電源裝置必須受到保護’否則輸人電壓過載便可能損 ，壞該裝置。目前為止’都係將電壓限制或靜電放電 衣置_)，如齊納（Zener)二極體，崩冑二極體之類，或電 晶體整合至該功率電晶體晶片或電源積體電路晶片中。雖 然可在製程中輕易地將元件整合至該電源晶片中，不過在 哪裝置中使用電源晶片時所浪費的電源晶片空間卻相當 地昂貴。再者，必須在該靜電放電裝置的尺寸及彈性，該 靜電放電裝置及/或電晶體的測試能力之間進行取捨。 本發明能夠冑決先前技藝電源褒置結構中的上述限制。 發明簡單概要 根據本發明，供雨頻應用的功率電晶體裝置包括，在第 一分離半導體晶片上的-功率電晶體；在第二分離半導體 晶片上的一電容器及一電壓限制裝置；及一封裝，用以… 納及密封該第-及第二半導體晶片。電性連接器可將= 一晶片上的電容器及電壓限制裝置連接至該第—晶片上的 功率電晶體。 曰 I___ -4- 本紙張尺度適财® ®家標準(CNS) A4規格(21〇><297公爱） 571478 A7
在本發明的較佳具體實施例中，該電壓限制裝置包括一 一極體或電晶冑，而該電容器則係一並聯的MQSCAP。因 為，該M〇SCAP晶片擁有足夠的空間可製造該電麼限制或 ESD衣置所以在該半導體晶片中有更大的空間可供該功 率電晶體使用，因此在製造該電源裝置時會有更大的彈性 «下面的#細說明及相關的中請專利範圍，並結合圖示 將可更清楚本發明及其目的與特性。 圖式簡單說明 圖1A及1 B所不的係根據先前技藝之電性圖及封裝後功率 電晶體貫體結構的平面圖。 圖2A及2B所示的係根據本發明具體實施例之電性圖及封 裝後功率電晶體裝置配置的平面圖。 圖3所不的係根據本發明具體實施例之M〇scAp及二極體 區段的側面圖。 在該些圖式中，相同的元件具有相同的參考符號。 具體實施例之詳細說明 圖1A及1B所示的係根據先前技藝之電性圖及灯功率電晶 體實體配置的平面圖。如圖1A所示，RF會經由一可能係焊、 接線路的電感元件10及一位於第一晶片21中的分流電容器 12輸入至該電源裝置。接著，該輸入信號便會經由焊接線 路Η送至第二晶片22中的功率電晶體，如橫向dm〇s電晶體 18之類的閘極16。從電晶體18的汲極2〇可以取得電源輸出 ，而電壓限制裝置，如齊納二極體24之類.，則係連接在閘
裝 訂
k -5- 571478 A7

Claims (1)

  1. 申請專利範園 1 ·· 一種供高頻應用 a)-第-分離^?:裝置，其包括： ―:二分離半導體晶片中的—電晶體； C) 一電壓限制裝置； 冤合益； d) 一種用於衮知 、、内及密封該功率電曰辨 麼限制裝置的封袭，·及 B曰體’電容器，及電 e) 電性連接器，其可將該電 至該功率電晶體。 °電壓限制裝置連接 2 ·如申請專利範圍 限制裳置係與該電容哭一tt!晶體装置，其中該電屡 片中。 口口 e衣1"於该第二分離半導體晶 3·如申請專利範圍第1項之功率電晶體裝置 限制裝置包括—電晶體。 、 4.如申請專利範圍第丨項之功率電晶 限制裝置包括一二極體。 5 ·如申請專利範圍第1項之功率電晶體裝置 連接器戽括焊接線路。 、 “:申請專利範圍第1項之功率電晶體褒置 器係一 MOSCAP或其它的電容器結構。 7.如申請專利範圍第6項之功率電晶體裝置， 限制裝置包括一二極體。 3.如申凊專利範圍第7項之功率電晶體裝置， 其中該電壓 其中該電壓 其中該電性 其中該電容 其中該電壓 連接器包括谭接線路。 其中該電性 本紙張尺度適用中國國家標準(CNS) A4規格(21〇X 297公 571478
    種為與製造於一分離半導體晶片中的功率電晶體一起 使用之電谷為結構，該電容器結構包栝一分離半導體晶 片’二製造於該半導體晶片中的電容性元件，及一製造 於泫半導體晶片中且與該電容器結構龙聯的電壓限制穿 置。 、 .如申凊專利範圍第9項之電容器結構，其中該電壓限 裝置包括一二極體。 11.如申請專利範圍第9項之電容器結構，其中該電壓限 裝置包括'一電晶體。 12·如申請專利範圍第9項之電容器結構，其包 用以電性連接該電容器及該電壓限制裝置。舌烊接線 13·如申請專利範圍第9項之電容器結構， 構匕括一 MOSCAP或其它電容器結構。 口口 -9- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐）
TW091115533A 2001-07-13 2002-07-12 Voltage limiting protection for high frequency power device TW571478B (en)

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KR (1) KR100874795B1 (zh)
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US6548869B2 (en) 2003-04-15
EP1415378A1 (en) 2004-05-06
KR100874795B1 (ko) 2008-12-19
CN1528039A (zh) 2004-09-08
CN100397742C (zh) 2008-06-25
WO2003007451A1 (en) 2003-01-23
EP1415378A4 (en) 2008-10-08
US20030011031A1 (en) 2003-01-16
CA2453562C (en) 2012-03-13
KR20040011599A (ko) 2004-02-05
CA2453562A1 (en) 2003-01-23
JP2004535680A (ja) 2004-11-25

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