CN1528039A - 用于高频功率器件的限压保护 - Google Patents

用于高频功率器件的限压保护 Download PDF

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CN1528039A
CN1528039A CNA028140281A CN02814028A CN1528039A CN 1528039 A CN1528039 A CN 1528039A CN A028140281 A CNA028140281 A CN A028140281A CN 02814028 A CN02814028 A CN 02814028A CN 1528039 A CN1528039 A CN 1528039A
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power transistor
pressure limiting
limiting device
capacitor
semiconductor chip
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CN100397742C (zh
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K��P����³��
K·P·布鲁尔
H·D·巴特罗
J·A·达马万
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Wolfspeed Inc
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Abstract

本发明的课题是一种RF功率器件，包括在第一半导体芯片中制造的功率晶体管和在第二半导体芯片中制造的MOSCAP型结构。限压器件用于保护功率晶体管免遭输入电压尖峰的影响并最好与MOSCAP一起在半导体芯片中制造。另一方面，限压器件可以是在电容器半导体芯片上制造的或与电容器半导体芯片邻接的分立元件。通过从功率晶体管芯片中去掉限压器件，限压器件的制造和测试均得到加强，而且增加了功率器件的半导体面积，并有助于器件制造的灵活性。

Description

用于高频功率器件的限压保护
                          发明背景
本发明一般体涉及一种大功率电力器件，尤其是本发明涉及半导体功率器件中的限压和静电放电保护。
在典型情况下，高频下工作的功率半导体器件如MESFET或双极晶体管被连接到用于输入频率和阻抗匹配的容性器件如分立MOSCAP。该分立MOSCAP器件与半导体晶体管芯片一起被安装在半导体封装中，并用合适的方式如引线键合法相互连接。
功率器件必须得到保护，使得免遭可能损坏或毁坏器件的输入电压过载的影响。此前，限压或静电放电器件(ESD)如齐纳二极管、雪崩二极管或晶体管被集成在功率晶体管芯片或功率集成电路芯片中。虽然功率芯片上元件的这种集成在制造过程中容易实现，但是ESD器件中采用功率芯片在功率芯片空间的损失方面付出的代价是高昂的。进而，静电放电器件的尺寸和灵活性连同分开测试静电放电器件和/或晶体管的能力一起应予折衷考虑。
本发明在于克服现有技术的功率器件结构中存在的这些限制。
                          发明概述
根据本发明，用于高频应用的功率晶体管器件包括第一分立半导体芯片中的功率晶体管、第二分立半导体芯片中的电容器和限压器件、以及用于容纳和密封第一和第二半导体芯片的封装。电连接器将第二芯片中的电容器和限压器件连接到第一芯片中的功率晶体管。
在本发明的优选实施例中，限压器件包括二极管或晶体管，而且电容器是被并联连接的MOSCAP。由于MOSCAP芯片具有足够的空间来制造限压或ESD器件，半导体芯片中有增大的空间可供功率晶体管使用，因而允许在制造功率器件中有较大的灵活性。
本发明以及其目的和特征将参照附图从下面的详细描述以及相关权利要求中更加容易明白。
                    附图的简要说明
图1A和1B是根据现有技术的封装后的功率晶体管的物理结构的电路图和平面图。
图2A，2B是根据本发明的一个实施例的功率晶体管器件的物理布局的电路图和平面图。
图3是根据本发明的一个实施例的MOSCAP和二极管的截面侧视图。
附图中相同的元件标以相同的参照数字。
                 例示实施例的详细说明
图1A和1B是根据现有技术的RF功率晶体管的物理布局的电路图和平面图。如图1A所示，通过可以为引线键合体的电感元件10和第一芯片21中的旁路电容器12将RF输入施加给功率器件。接着输入信号通过引线键合体14被施加到功率晶体管的，例如第二芯片22中的横向DMOS晶体管18的栅极16。在晶体管18的漏极20得到功率输出，而限压器件如齐纳二极管24被连接在功率晶体管18的栅极16与源极26之间以保护晶体管免遭输入端上电压尖峰的影响。如图1B所示，芯片21和芯片22被安装在半导体封装30内，用引线键合体14将芯片21中的电容器与ESD器件24和功率晶体管18相连接。
如上所述，虽然在具有功率晶体管18的芯片中设置静电放电器件24便于结构的制造，但是ESD器件占用宝贵的半导体芯片空间，并限制功率晶体管的灵活性和尺寸。进而，由于在制造中限压器件与功率晶体管相连接，所以该器件的测试较为困难。
根据本发明，尽管在芯片面积、工艺流程和结构方面所加的限制较少，将限压器件设置在电容器芯片上有助于限压器件的灵活性和测试。从而，成本降低，而且限压结构可以与晶体管和电容结构二者分开测试。
在图2A和2B中，ESD器件24设置在芯片21上，利用引线键合体10将MOSCAP12与ESD器件24连接，并且利用引线键合体14将MOSCAP12连接到芯片22中的功率FET上。
图3是示出了在芯片21的表面上形成的并且限压器件如二极管24在芯片21中制造的MOSCAP12的截面侧视图。在通过引线键合体14将二极管与MOSCAP12相连接之前，可以很容易测试二极管24的电学特性。此外，二极管24可以是齐纳或雪崩二极管或者限压晶体管结构。
根据本发明的功率晶体管消除了强加于功率晶体管芯片的限制，并具有测试和使用限压器件的灵活性。功率晶体管的管芯的成本得到降低而且在晶体管布局方面有较大的灵活性。虽然参照具体的实施例描述了本发明，但该描述为例示性的，不解释为对发明的限制。例如，虽然优选实施例包括MOSCAP半导体管芯中的ESD器件，但是也可以将单独的分立ESD或限压器件与MOSCAP和功率FET管芯一起安装在晶体管封装中。因此，虽然参照具体的实施例描述了本发明，但该描述为例示性的，不解释为对发明的限制。在不脱离所附权利要求所限定的本发明的宗旨和范围之内，本专业的技术人员可以进行各种修改和应用。

Claims (13)

1.一种用于高频应用的功率晶体管器件，包括：
a)第一分立半导体芯片中的功率晶体管；
b)第二分立半导体芯片中的电容器；
c)限压器件；
d)用于容纳和密封功率晶体管、电容器和限压器件的封装；以及
e)将电容器和限压器件连接到功率晶体管的电连接器。
2.根据权利要求1所述的功率晶体管器件，其中限压器件与电容器一起在第二分立半导体芯片中制造。
3.根据权利要求1所述的功率晶体管器件，其中限压器件包括晶体管。
4.根据权利要求1所述的功率晶体管器件，其中限压器件包括二极管。
5.根据权利要求1所述的功率晶体管器件，其中电连接器包括引线键合体。
6.根据权利要求1所述的功率晶体管器件，其中电容器为MOSCAP或其它电容器结构。
7.根据权利要求6所述的功率晶体管器件，其中限压器件包括二极管。
8.根据权利要求7所述的功率晶体管器件，其中电连接器包括引线键合体。
9.为采用在分立半导体芯片中制造的功率晶体管，电容器结构包括分立半导体芯片，在半导体芯片中制造的容性元件，以及在半导体芯片中制造并可与电容器结构并联连接的限压器件。
10.根据权利要求9所述的电容器结构，其中限压器件包括二极管。
11.根据权利要求9所述的电容器结构，其中限压器件包括晶体管。
12.根据权利要求9所述的电容器结构，包括引线键合体，用于将电容器和限压器件电连接。
13.根据权利要求9所述的电容器结构，其中电容器结构包括MOSCAP或其它电容器结构。
CNB028140281A 2001-07-13 2002-07-12 用于高频功率器件的限压保护 Expired - Lifetime CN100397742C (zh)

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Application Number Priority Date Filing Date Title
US09/905,294 2001-07-13
US09/905,294 US6548869B2 (en) 2001-07-13 2001-07-13 Voltage limiting protection for high frequency power device

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CN1528039A true CN1528039A (zh) 2004-09-08
CN100397742C CN100397742C (zh) 2008-06-25

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102023238A (zh) * 2010-11-04 2011-04-20 中国电子科技集团公司第十三研究所 用于SiC MESFET直流测试的夹具

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2841058A1 (fr) * 2002-06-14 2003-12-19 St Microelectronics Sa Dispositif electrique comprenant deux supports et une borne de connexion reliee a un condensateur serie et a un limiteur de tension
JP2005303940A (ja) * 2004-04-16 2005-10-27 Matsushita Electric Ind Co Ltd アンテナスイッチ回路、ならびにそれを用いた複合高周波部品および移動体通信機器
US20060132996A1 (en) * 2004-12-17 2006-06-22 Poulton John W Low-capacitance electro-static discharge protection
US7767543B2 (en) * 2005-09-06 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a micro-electro-mechanical device with a folded substrate
US20110309872A1 (en) 2010-06-17 2011-12-22 Cynthia Blair Voltage Spike Protection for Power DMOS Devices
TWI544303B (zh) 2015-01-30 2016-08-01 財團法人工業技術研究院 單光子雪崩光電二極體的超額偏壓控制系統與方法
JP6406486B1 (ja) * 2017-03-17 2018-10-17 株式会社村田製作所 薄膜ｅｓｄ保護デバイス
DE112017007345T5 (de) 2017-03-28 2019-12-12 Mitsubishi Electric Corporation Halbleitervorrichtung
CN110364511A (zh) * 2019-07-24 2019-10-22 德淮半导体有限公司 半导体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4758873A (en) * 1986-05-16 1988-07-19 National Semiconductor Corporation Balanced MOS capacitor with low stray capacitance and high ESD survival
US5134320A (en) * 1991-03-07 1992-07-28 Hughes Aircraft Company High efficiency FET driver with energy recovery
US5264736A (en) * 1992-04-28 1993-11-23 Raytheon Company High frequency resonant gate drive for a power MOSFET
JPH06232332A (ja) * 1993-02-08 1994-08-19 Hitachi Ltd 半導体装置
DE4306361A1 (de) * 1993-03-02 1994-09-08 Daimler Benz Ag Datenkommunikationssystem
US5532639A (en) * 1994-03-31 1996-07-02 Sgs-Thomson Microelectronics, Inc. Method and structure for improving RF amplifier gain, linearity, and switching speed utilizing Schottky diode technology
US6066890A (en) * 1995-11-13 2000-05-23 Siliconix Incorporated Separate circuit devices in an intra-package configuration and assembly techniques
US6198136B1 (en) * 1996-03-19 2001-03-06 International Business Machines Corporation Support chips for buffer circuits
JPH1167486A (ja) * 1997-08-14 1999-03-09 Oki Electric Ind Co Ltd Ｅｓｄ保護回路及びｅｓｄ保護回路を含むパッケージ
US6486548B1 (en) * 1997-10-20 2002-11-26 Hitachi, Ltd. Semiconductor module and power converting apparatus using the module
KR100351920B1 (ko) * 1999-05-17 2002-09-12 앰코 테크놀로지 코리아 주식회사 반도체 패키지 및 그 제조 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102023238A (zh) * 2010-11-04 2011-04-20 中国电子科技集团公司第十三研究所 用于SiC MESFET直流测试的夹具
CN102023238B (zh) * 2010-11-04 2012-09-12 中国电子科技集团公司第十三研究所 用于SiC MESFET直流测试的夹具

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EP1415378A1 (en) 2004-05-06
EP1415378A4 (en) 2008-10-08
KR100874795B1 (ko) 2008-12-19
US20030011031A1 (en) 2003-01-16
CA2453562A1 (en) 2003-01-23
WO2003007451A1 (en) 2003-01-23
KR20040011599A (ko) 2004-02-05
TW571478B (en) 2004-01-11
CA2453562C (en) 2012-03-13
US6548869B2 (en) 2003-04-15
CN100397742C (zh) 2008-06-25
JP2004535680A (ja) 2004-11-25

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