TW561550B - High frequency signal isolation in a semiconductor device - Google Patents

High frequency signal isolation in a semiconductor device Download PDF

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Publication number
TW561550B
TW561550B TW091125084A TW91125084A TW561550B TW 561550 B TW561550 B TW 561550B TW 091125084 A TW091125084 A TW 091125084A TW 91125084 A TW91125084 A TW 91125084A TW 561550 B TW561550 B TW 561550B
Authority
TW
Taiwan
Prior art keywords
wellbore
isolated
well
buried
semiconductor device
Prior art date
Application number
TW091125084A
Other languages
English (en)
Chinese (zh)
Inventor
Du Yang
Suman Kumar Banerjee
Rainer Thoma
Alain Duvallet
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of TW561550B publication Critical patent/TW561550B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW091125084A 2001-11-02 2002-10-25 High frequency signal isolation in a semiconductor device TW561550B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/003,535 US6563181B1 (en) 2001-11-02 2001-11-02 High frequency signal isolation in a semiconductor device

Publications (1)

Publication Number Publication Date
TW561550B true TW561550B (en) 2003-11-11

Family

ID=21706319

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091125084A TW561550B (en) 2001-11-02 2002-10-25 High frequency signal isolation in a semiconductor device

Country Status (7)

Country Link
US (1) US6563181B1 (https=)
EP (1) EP1497858B1 (https=)
JP (1) JP4579539B2 (https=)
KR (1) KR100909346B1 (https=)
CN (1) CN1314098C (https=)
TW (1) TW561550B (https=)
WO (1) WO2003041161A2 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6710424B2 (en) 2001-09-21 2004-03-23 Airip RF chipset architecture
US20030234438A1 (en) * 2002-06-24 2003-12-25 Motorola, Inc. Integrated circuit structure for mixed-signal RF applications and circuits
US7667268B2 (en) * 2002-08-14 2010-02-23 Advanced Analogic Technologies, Inc. Isolated transistor
US7834421B2 (en) * 2002-08-14 2010-11-16 Advanced Analogic Technologies, Inc. Isolated diode
US8089129B2 (en) * 2002-08-14 2012-01-03 Advanced Analogic Technologies, Inc. Isolated CMOS transistors
US7825488B2 (en) * 2006-05-31 2010-11-02 Advanced Analogic Technologies, Inc. Isolation structures for integrated circuits and modular methods of forming the same
US8513087B2 (en) * 2002-08-14 2013-08-20 Advanced Analogic Technologies, Incorporated Processes for forming isolation structures for integrated circuit devices
US7956391B2 (en) * 2002-08-14 2011-06-07 Advanced Analogic Technologies, Inc. Isolated junction field-effect transistor
US6744112B2 (en) * 2002-10-01 2004-06-01 International Business Machines Corporation Multiple chip guard rings for integrated circuit and chip guard ring interconnect
US6891207B2 (en) * 2003-01-09 2005-05-10 International Business Machines Corporation Electrostatic discharge protection networks for triple well semiconductor devices
US7429891B2 (en) * 2003-02-14 2008-09-30 Broadcom Corporation Method and system for low noise amplifier (LNA) gain adjustment through narrowband received signal strength indicator (NRSSI)
US7851860B2 (en) * 2004-03-26 2010-12-14 Honeywell International Inc. Techniques to reduce substrate cross talk on mixed signal and RF circuit design
US7138686B1 (en) 2005-05-31 2006-11-21 Freescale Semiconductor, Inc. Integrated circuit with improved signal noise isolation and method for improving signal noise isolation
US7608913B2 (en) 2006-02-23 2009-10-27 Freescale Semiconductor, Inc. Noise isolation between circuit blocks in an integrated circuit chip
US7881679B1 (en) * 2007-03-14 2011-02-01 Rf Micro Devices, Inc. Method and apparatus for integrating power amplifiers with phase locked loop in a single chip transceiver
US8138570B2 (en) * 2007-03-28 2012-03-20 Advanced Analogic Technologies, Inc. Isolated junction field-effect transistor
US7651889B2 (en) 2007-09-13 2010-01-26 Freescale Semiconductor, Inc. Electromagnetic shield formation for integrated circuit die package
US8227902B2 (en) * 2007-11-26 2012-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Structures for preventing cross-talk between through-silicon vias and integrated circuits
CN101635298B (zh) * 2009-06-10 2014-12-31 北京中星微电子有限公司 平面工艺的三维集成电路
US8546953B2 (en) * 2011-12-13 2013-10-01 Taiwan Semiconductor Manufacturing Co., Ltd. Through silicon via (TSV) isolation structures for noise reduction in 3D integrated circuit
US8921978B2 (en) * 2012-01-10 2014-12-30 Taiwan Semiconductor Manufacturing Co., Ltd. Dual DNW isolation structure for reducing RF noise on high voltage semiconductor devices
CN104332409B (zh) * 2014-11-05 2017-09-19 北京大学 基于深n阱工艺隔离隧穿场效应晶体管的制备方法
CN110880502B (zh) * 2018-09-05 2022-10-14 无锡华润上华科技有限公司 半导体结构及电机驱动装置
JP7176676B2 (ja) * 2018-11-16 2022-11-22 ミネベアミツミ株式会社 検出装置
KR102952755B1 (ko) 2021-06-14 2026-04-15 삼성전자주식회사 웰 영역을 포함하는 반도체 장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56120141A (en) * 1980-02-27 1981-09-21 Toshiba Corp Semiconductor device
JPS62177959A (ja) * 1986-01-31 1987-08-04 Nec Corp 半導体装置
JPH0353561A (ja) * 1989-07-21 1991-03-07 Fujitsu Ltd 半導体集積回路装置
US5027183A (en) * 1990-04-20 1991-06-25 International Business Machines Isolated semiconductor macro circuit
JPH04147668A (ja) * 1990-10-11 1992-05-21 Hitachi Ltd 半導体集積回路装置とその製造方法
JP2976912B2 (ja) * 1997-01-13 1999-11-10 日本電気株式会社 半導体記憶装置
JP2000021972A (ja) * 1998-07-03 2000-01-21 Fujitsu Ltd 半導体装置
US6349067B1 (en) * 2001-01-30 2002-02-19 International Business Machines Corporation System and method for preventing noise cross contamination between embedded DRAM and system chip

Also Published As

Publication number Publication date
CN1610966A (zh) 2005-04-27
KR20040053273A (ko) 2004-06-23
US20030085432A1 (en) 2003-05-08
JP4579539B2 (ja) 2010-11-10
JP2005536867A (ja) 2005-12-02
WO2003041161A2 (en) 2003-05-15
KR100909346B1 (ko) 2009-07-24
WO2003041161A3 (en) 2003-11-13
CN1314098C (zh) 2007-05-02
US6563181B1 (en) 2003-05-13
EP1497858A2 (en) 2005-01-19
EP1497858B1 (en) 2011-09-28

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MM4A Annulment or lapse of patent due to non-payment of fees