CN1314098C - 半导体器件中的高频信号隔离 - Google Patents

半导体器件中的高频信号隔离 Download PDF

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Publication number
CN1314098C
CN1314098C CNB028241436A CN02824143A CN1314098C CN 1314098 C CN1314098 C CN 1314098C CN B028241436 A CNB028241436 A CN B028241436A CN 02824143 A CN02824143 A CN 02824143A CN 1314098 C CN1314098 C CN 1314098C
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CN
China
Prior art keywords
well
type
type well
isolated
buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB028241436A
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English (en)
Chinese (zh)
Other versions
CN1610966A (zh
Inventor
杨笃
苏曼·K.·班纳吉
雷纳·托玛
艾伦·杜瓦利特
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NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
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Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of CN1610966A publication Critical patent/CN1610966A/zh
Application granted granted Critical
Publication of CN1314098C publication Critical patent/CN1314098C/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CNB028241436A 2001-11-02 2002-10-10 半导体器件中的高频信号隔离 Expired - Fee Related CN1314098C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/003,535 2001-11-02
US10/003,535 US6563181B1 (en) 2001-11-02 2001-11-02 High frequency signal isolation in a semiconductor device

Publications (2)

Publication Number Publication Date
CN1610966A CN1610966A (zh) 2005-04-27
CN1314098C true CN1314098C (zh) 2007-05-02

Family

ID=21706319

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028241436A Expired - Fee Related CN1314098C (zh) 2001-11-02 2002-10-10 半导体器件中的高频信号隔离

Country Status (7)

Country Link
US (1) US6563181B1 (https=)
EP (1) EP1497858B1 (https=)
JP (1) JP4579539B2 (https=)
KR (1) KR100909346B1 (https=)
CN (1) CN1314098C (https=)
TW (1) TW561550B (https=)
WO (1) WO2003041161A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110880502A (zh) * 2018-09-05 2020-03-13 无锡华润上华科技有限公司 半导体结构及电机驱动装置

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6710424B2 (en) 2001-09-21 2004-03-23 Airip RF chipset architecture
US20030234438A1 (en) * 2002-06-24 2003-12-25 Motorola, Inc. Integrated circuit structure for mixed-signal RF applications and circuits
US7667268B2 (en) * 2002-08-14 2010-02-23 Advanced Analogic Technologies, Inc. Isolated transistor
US7834421B2 (en) * 2002-08-14 2010-11-16 Advanced Analogic Technologies, Inc. Isolated diode
US8089129B2 (en) * 2002-08-14 2012-01-03 Advanced Analogic Technologies, Inc. Isolated CMOS transistors
US7825488B2 (en) * 2006-05-31 2010-11-02 Advanced Analogic Technologies, Inc. Isolation structures for integrated circuits and modular methods of forming the same
US8513087B2 (en) * 2002-08-14 2013-08-20 Advanced Analogic Technologies, Incorporated Processes for forming isolation structures for integrated circuit devices
US7956391B2 (en) * 2002-08-14 2011-06-07 Advanced Analogic Technologies, Inc. Isolated junction field-effect transistor
US6744112B2 (en) * 2002-10-01 2004-06-01 International Business Machines Corporation Multiple chip guard rings for integrated circuit and chip guard ring interconnect
US6891207B2 (en) * 2003-01-09 2005-05-10 International Business Machines Corporation Electrostatic discharge protection networks for triple well semiconductor devices
US7429891B2 (en) * 2003-02-14 2008-09-30 Broadcom Corporation Method and system for low noise amplifier (LNA) gain adjustment through narrowband received signal strength indicator (NRSSI)
US7851860B2 (en) * 2004-03-26 2010-12-14 Honeywell International Inc. Techniques to reduce substrate cross talk on mixed signal and RF circuit design
US7138686B1 (en) 2005-05-31 2006-11-21 Freescale Semiconductor, Inc. Integrated circuit with improved signal noise isolation and method for improving signal noise isolation
US7608913B2 (en) 2006-02-23 2009-10-27 Freescale Semiconductor, Inc. Noise isolation between circuit blocks in an integrated circuit chip
US7881679B1 (en) * 2007-03-14 2011-02-01 Rf Micro Devices, Inc. Method and apparatus for integrating power amplifiers with phase locked loop in a single chip transceiver
US8138570B2 (en) * 2007-03-28 2012-03-20 Advanced Analogic Technologies, Inc. Isolated junction field-effect transistor
US7651889B2 (en) 2007-09-13 2010-01-26 Freescale Semiconductor, Inc. Electromagnetic shield formation for integrated circuit die package
US8227902B2 (en) * 2007-11-26 2012-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Structures for preventing cross-talk between through-silicon vias and integrated circuits
CN101635298B (zh) * 2009-06-10 2014-12-31 北京中星微电子有限公司 平面工艺的三维集成电路
US8546953B2 (en) * 2011-12-13 2013-10-01 Taiwan Semiconductor Manufacturing Co., Ltd. Through silicon via (TSV) isolation structures for noise reduction in 3D integrated circuit
US8921978B2 (en) * 2012-01-10 2014-12-30 Taiwan Semiconductor Manufacturing Co., Ltd. Dual DNW isolation structure for reducing RF noise on high voltage semiconductor devices
CN104332409B (zh) * 2014-11-05 2017-09-19 北京大学 基于深n阱工艺隔离隧穿场效应晶体管的制备方法
JP7176676B2 (ja) * 2018-11-16 2022-11-22 ミネベアミツミ株式会社 検出装置
KR102952755B1 (ko) 2021-06-14 2026-04-15 삼성전자주식회사 웰 영역을 포함하는 반도체 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0452662A1 (en) * 1990-04-20 1991-10-23 International Business Machines Corporation Isolated semiconductor macro circuit
JPH04147668A (ja) * 1990-10-11 1992-05-21 Hitachi Ltd 半導体集積回路装置とその製造方法
CN1188331A (zh) * 1997-01-13 1998-07-22 日本电气株式会社 具有新布图的半导体器件

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56120141A (en) * 1980-02-27 1981-09-21 Toshiba Corp Semiconductor device
JPS62177959A (ja) * 1986-01-31 1987-08-04 Nec Corp 半導体装置
JPH0353561A (ja) * 1989-07-21 1991-03-07 Fujitsu Ltd 半導体集積回路装置
JP2000021972A (ja) * 1998-07-03 2000-01-21 Fujitsu Ltd 半導体装置
US6349067B1 (en) * 2001-01-30 2002-02-19 International Business Machines Corporation System and method for preventing noise cross contamination between embedded DRAM and system chip

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0452662A1 (en) * 1990-04-20 1991-10-23 International Business Machines Corporation Isolated semiconductor macro circuit
JPH04147668A (ja) * 1990-10-11 1992-05-21 Hitachi Ltd 半導体集積回路装置とその製造方法
CN1188331A (zh) * 1997-01-13 1998-07-22 日本电气株式会社 具有新布图的半导体器件

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110880502A (zh) * 2018-09-05 2020-03-13 无锡华润上华科技有限公司 半导体结构及电机驱动装置
CN110880502B (zh) * 2018-09-05 2022-10-14 无锡华润上华科技有限公司 半导体结构及电机驱动装置

Also Published As

Publication number Publication date
CN1610966A (zh) 2005-04-27
KR20040053273A (ko) 2004-06-23
US20030085432A1 (en) 2003-05-08
JP4579539B2 (ja) 2010-11-10
JP2005536867A (ja) 2005-12-02
WO2003041161A2 (en) 2003-05-15
KR100909346B1 (ko) 2009-07-24
TW561550B (en) 2003-11-11
WO2003041161A3 (en) 2003-11-13
US6563181B1 (en) 2003-05-13
EP1497858A2 (en) 2005-01-19
EP1497858B1 (en) 2011-09-28

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Patentee after: NXP USA, Inc.

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Granted publication date: 20070502

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