JP5209301B2 - 混合信号についての基板クロストークを低減する技術及びrf回路設計 - Google Patents
混合信号についての基板クロストークを低減する技術及びrf回路設計 Download PDFInfo
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- JP5209301B2 JP5209301B2 JP2007505127A JP2007505127A JP5209301B2 JP 5209301 B2 JP5209301 B2 JP 5209301B2 JP 2007505127 A JP2007505127 A JP 2007505127A JP 2007505127 A JP2007505127 A JP 2007505127A JP 5209301 B2 JP5209301 B2 JP 5209301B2
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- Prior art keywords
- guard ring
- isolation
- semiconductor
- integrated circuit
- mesa
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- Expired - Fee Related
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- 239000000758 substrate Substances 0.000 title claims description 41
- 238000005516 engineering process Methods 0.000 title description 2
- 239000004065 semiconductor Substances 0.000 claims description 72
- 238000002955 isolation Methods 0.000 claims description 71
- 229910052710 silicon Inorganic materials 0.000 claims description 31
- 239000010703 silicon Substances 0.000 claims description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/765—Making of isolation regions between components by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Description
Claims (6)
- 高抵抗率の半導体基板と、
前記半導体基板の上の埋込絶縁層と、
前記埋込絶縁層の上の第1の半導体メサと、
前記埋込絶縁層の上の第2の半導体メサと、
前記第1の半導体メサを囲む第1のガード・リングと、
前記第2の半導体メサを囲む第2のガード・リングと、
前記第1のガード・リングの周囲を囲み、前記第1のガード・リングと第2のガード・リングの間に形成された第3のガード・リングと、を備え、
前記第1のガード・リングは、前記埋込絶縁層を通って前記半導体基板と接触して拡張し、前記第1の半導体メサに対してRF分離を与えるよう構成され、
前記第2のガード・リングは、前記埋込絶縁層を通って前記半導体基板と接触して拡張し、前記第2の半導体メサに対してRF分離を与えるよう構成され、
前記第3のガード・リングは、前記半導体基板と接触し、前記第1と第2の半導体メサに対してさらにRF分離を与えるよう構成されている、
集積回路。 - 前記半導体基板は、シリコン基板を含み、
前記埋込絶縁層は、埋込シリコン酸化物層を含み、
前記第1の半導体メサは、第1のシリコン・メサを含み、
前記第2の半導体メサは、第2のシリコン・メサを含む、
請求項1に記載の集積回路。 - 前記半導体基板は、前記第1のガード・リングにより接触されている範囲にドーピングされ、前記半導体基板は、前記第3のガードリングにより接触されている範囲にドーピングされている、請求項1に記載の集積回路。
- 前記第1のガード・リングは、第1の低抵抗率のガード・リングを含み、前記第2のガード・リングは、第2の低抵抗率のガード・リングを含み、前記第3のガード・リングは、第3の低抵抗率のガード・リングを含む、請求項1に記載の集積回路。
- 前記第1のガード・リングは、第1の金属ガード・リングを含み、前記第2のガード・リングは、第2の金属ガード・リングを含み、前記第3のガード・リングは、第3の金属ガード・リングを含む、請求項1に記載の集積回路。
- 前記第1の金属ガード・リングは、第1のタングステン・ガード・リングを含み、前記第2の金属ガード・リングは、第2のタングステン・ガード・リングを含み、前記第3の金属ガード・リングは、第3のタングステン・ガード・リングを含む、請求項5に記載の集積回路。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/811,207 US7851860B2 (en) | 2004-03-26 | 2004-03-26 | Techniques to reduce substrate cross talk on mixed signal and RF circuit design |
US10/811,207 | 2004-03-26 | ||
PCT/US2005/009643 WO2005098937A1 (en) | 2004-03-26 | 2005-03-23 | Techniques to reduce substrate cross talk on mixed signal and rf circuit design |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007531281A JP2007531281A (ja) | 2007-11-01 |
JP2007531281A5 JP2007531281A5 (ja) | 2008-03-27 |
JP5209301B2 true JP5209301B2 (ja) | 2013-06-12 |
Family
ID=34963645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007505127A Expired - Fee Related JP5209301B2 (ja) | 2004-03-26 | 2005-03-23 | 混合信号についての基板クロストークを低減する技術及びrf回路設計 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7851860B2 (ja) |
EP (1) | EP1728275B1 (ja) |
JP (1) | JP5209301B2 (ja) |
DE (1) | DE602005026918D1 (ja) |
TW (1) | TWI364091B (ja) |
WO (1) | WO2005098937A1 (ja) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2003044863A1 (en) * | 2001-11-20 | 2003-05-30 | The Regents Of The University Of California | Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications |
US7851860B2 (en) * | 2004-03-26 | 2010-12-14 | Honeywell International Inc. | Techniques to reduce substrate cross talk on mixed signal and RF circuit design |
JP4974474B2 (ja) | 2004-06-22 | 2012-07-11 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP4689244B2 (ja) | 2004-11-16 | 2011-05-25 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8188565B2 (en) * | 2005-12-09 | 2012-05-29 | Via Technologies, Inc. | Semiconductor chip and shielding structure thereof |
US7608913B2 (en) | 2006-02-23 | 2009-10-27 | Freescale Semiconductor, Inc. | Noise isolation between circuit blocks in an integrated circuit chip |
JP4949733B2 (ja) * | 2006-05-11 | 2012-06-13 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7691734B2 (en) * | 2007-03-01 | 2010-04-06 | International Business Machines Corporation | Deep trench based far subcollector reachthrough |
US7718514B2 (en) * | 2007-06-28 | 2010-05-18 | International Business Machines Corporation | Method of forming a guard ring or contact to an SOI substrate |
US8026131B2 (en) * | 2008-12-23 | 2011-09-27 | International Business Machines Corporation | SOI radio frequency switch for reducing high frequency harmonics |
US7999320B2 (en) * | 2008-12-23 | 2011-08-16 | International Business Machines Corporation | SOI radio frequency switch with enhanced signal fidelity and electrical isolation |
US7897477B2 (en) | 2009-01-21 | 2011-03-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming an isolation structure |
US8133774B2 (en) | 2009-03-26 | 2012-03-13 | International Business Machines Corporation | SOI radio frequency switch with enhanced electrical isolation |
JP5638205B2 (ja) * | 2009-06-16 | 2014-12-10 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JPWO2011086612A1 (ja) * | 2010-01-15 | 2013-05-16 | パナソニック株式会社 | 半導体装置 |
US8749018B2 (en) * | 2010-06-21 | 2014-06-10 | Infineon Technologies Ag | Integrated semiconductor device having an insulating structure and a manufacturing method |
CN102478620B (zh) * | 2010-11-25 | 2013-09-11 | 上海华虹Nec电子有限公司 | 射频工艺中射频隔离度的表征方法 |
EP2602817A1 (en) * | 2011-12-05 | 2013-06-12 | Nxp B.V. | Integrated circuit and IC manufacturing method |
US8896102B2 (en) * | 2013-01-22 | 2014-11-25 | Freescale Semiconductor, Inc. | Die edge sealing structures and related fabrication methods |
US20160020279A1 (en) * | 2014-07-18 | 2016-01-21 | International Rectifier Corporation | Edge Termination Using Guard Rings Between Recessed Field Oxide Regions |
US10438902B2 (en) | 2017-09-07 | 2019-10-08 | Globalfoundries Inc. | Arc-resistant crackstop |
JP7087336B2 (ja) * | 2017-10-13 | 2022-06-21 | 株式会社デンソー | 半導体装置 |
US11296031B2 (en) | 2018-03-30 | 2022-04-05 | Intel Corporation | Dielectric-filled trench isolation of vias |
JP7039411B2 (ja) | 2018-07-20 | 2022-03-22 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置及び車 |
DE102019117707B4 (de) * | 2019-07-01 | 2021-12-30 | RF360 Europe GmbH | Halbleiter-Die und Antennentuner |
JP7222851B2 (ja) | 2019-08-29 | 2023-02-15 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び車 |
JP7153001B2 (ja) | 2019-09-18 | 2022-10-13 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び車 |
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US7851860B2 (en) * | 2004-03-26 | 2010-12-14 | Honeywell International Inc. | Techniques to reduce substrate cross talk on mixed signal and RF circuit design |
-
2004
- 2004-03-26 US US10/811,207 patent/US7851860B2/en not_active Expired - Fee Related
-
2005
- 2005-03-23 EP EP05726078A patent/EP1728275B1/en not_active Expired - Fee Related
- 2005-03-23 DE DE602005026918T patent/DE602005026918D1/de active Active
- 2005-03-23 WO PCT/US2005/009643 patent/WO2005098937A1/en not_active Application Discontinuation
- 2005-03-23 JP JP2007505127A patent/JP5209301B2/ja not_active Expired - Fee Related
- 2005-03-25 TW TW094109387A patent/TWI364091B/zh not_active IP Right Cessation
-
2010
- 2010-11-04 US US12/939,770 patent/US8058689B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20050212071A1 (en) | 2005-09-29 |
TW200612518A (en) | 2006-04-16 |
US8058689B2 (en) | 2011-11-15 |
US7851860B2 (en) | 2010-12-14 |
WO2005098937A1 (en) | 2005-10-20 |
EP1728275B1 (en) | 2011-03-16 |
DE602005026918D1 (de) | 2011-04-28 |
US20110045652A1 (en) | 2011-02-24 |
JP2007531281A (ja) | 2007-11-01 |
EP1728275A1 (en) | 2006-12-06 |
TWI364091B (en) | 2012-05-11 |
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