TW554478B - Structure for connecting interconnect lines and method of manufacturing same - Google Patents

Structure for connecting interconnect lines and method of manufacturing same Download PDF

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Publication number
TW554478B
TW554478B TW091101031A TW91101031A TW554478B TW 554478 B TW554478 B TW 554478B TW 091101031 A TW091101031 A TW 091101031A TW 91101031 A TW91101031 A TW 91101031A TW 554478 B TW554478 B TW 554478B
Authority
TW
Taiwan
Prior art keywords
metal
aforementioned
copper
wiring
metal layer
Prior art date
Application number
TW091101031A
Other languages
English (en)
Chinese (zh)
Inventor
Masahiko Fujisawa
Akihiko Ohsaki
Noboru Morimoto
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW554478B publication Critical patent/TW554478B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/035—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW091101031A 2001-05-15 2002-01-23 Structure for connecting interconnect lines and method of manufacturing same TW554478B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001144957A JP2002343859A (ja) 2001-05-15 2001-05-15 配線間の接続構造及びその製造方法

Publications (1)

Publication Number Publication Date
TW554478B true TW554478B (en) 2003-09-21

Family

ID=18990834

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091101031A TW554478B (en) 2001-05-15 2002-01-23 Structure for connecting interconnect lines and method of manufacturing same

Country Status (4)

Country Link
US (2) US6624516B2 (https=)
JP (1) JP2002343859A (https=)
KR (1) KR100426904B1 (https=)
TW (1) TW554478B (https=)

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JP2004095611A (ja) * 2002-08-29 2004-03-25 Fujitsu Ltd 半導体装置およびその製造方法
KR100457057B1 (ko) * 2002-09-14 2004-11-10 삼성전자주식회사 금속막 형성 방법
US20040175926A1 (en) * 2003-03-07 2004-09-09 Advanced Micro Devices, Inc. Method for manufacturing a semiconductor component having a barrier-lined opening
US20040245636A1 (en) * 2003-06-06 2004-12-09 International Business Machines Corporation Full removal of dual damascene metal level
US7265038B2 (en) * 2003-11-25 2007-09-04 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a multi-layer seed layer for improved Cu ECP
US6849541B1 (en) * 2003-12-19 2005-02-01 United Microelectronics Corp. Method of fabricating a dual damascene copper wire
JP2005244178A (ja) * 2004-01-26 2005-09-08 Toshiba Corp 半導体装置の製造方法
KR101080401B1 (ko) * 2004-04-23 2011-11-04 삼성전자주식회사 평판 표시장치의 접합구조체 및 그 형성방법과 이를구비하는 평판 표시장치
JP4370206B2 (ja) * 2004-06-21 2009-11-25 パナソニック株式会社 半導体装置及びその製造方法
JP4224434B2 (ja) * 2004-06-30 2009-02-12 パナソニック株式会社 半導体装置及びその製造方法
DE102005023122A1 (de) * 2005-05-19 2006-11-23 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Schichtstapel und Verfahren
US7368379B2 (en) * 2005-08-04 2008-05-06 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-layer interconnect structure for semiconductor devices
US8308053B2 (en) * 2005-08-31 2012-11-13 Micron Technology, Inc. Microfeature workpieces having alloyed conductive structures, and associated methods
JP5387695B2 (ja) 2009-12-28 2014-01-15 富士通株式会社 配線構造の形成方法
US8460981B2 (en) 2010-09-28 2013-06-11 International Business Machines Corporation Use of contacts to create differential stresses on devices
US8815671B2 (en) 2010-09-28 2014-08-26 International Business Machines Corporation Use of contacts to create differential stresses on devices
US8835305B2 (en) * 2012-07-31 2014-09-16 International Business Machines Corporation Method of fabricating a profile control in interconnect structures
US9577023B2 (en) * 2013-06-04 2017-02-21 Globalfoundries Inc. Metal wires of a stacked inductor
US9219033B2 (en) * 2014-03-21 2015-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Via pre-fill on back-end-of-the-line interconnect layer
US10825724B2 (en) * 2014-04-25 2020-11-03 Taiwan Semiconductor Manufacturing Company Metal contact structure and method of forming the same in a semiconductor device
US9418951B2 (en) * 2014-05-15 2016-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with composite barrier layer under redistribution layer and manufacturing method thereof
US9496225B1 (en) 2016-02-08 2016-11-15 International Business Machines Corporation Recessed metal liner contact with copper fill

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Publication number Priority date Publication date Assignee Title
EP0751566A3 (en) * 1995-06-30 1997-02-26 Ibm Metal thin film barrier for electrical connections
JPH1167766A (ja) * 1997-08-19 1999-03-09 Sony Corp 半導体装置の製造方法
US6887353B1 (en) * 1997-12-19 2005-05-03 Applied Materials, Inc. Tailored barrier layer which provides improved copper interconnect electromigration resistance
US6127258A (en) 1998-06-25 2000-10-03 Motorola Inc. Method for forming a semiconductor device
JP2000124310A (ja) * 1998-10-16 2000-04-28 Matsushita Electronics Industry Corp 半導体装置およびその製造方法
JP2000183064A (ja) 1998-12-16 2000-06-30 Matsushita Electronics Industry Corp 半導体装置およびその製造方法
JP2000323571A (ja) * 1999-05-14 2000-11-24 Sony Corp 半導体装置の製造方法
US6146517A (en) * 1999-05-19 2000-11-14 Infineon Technologies North America Corp. Integrated circuits with copper metallization for interconnections
US6339258B1 (en) * 1999-07-02 2002-01-15 International Business Machines Corporation Low resistivity tantalum
KR100301057B1 (ko) * 1999-07-07 2001-11-01 윤종용 구리 배선층을 갖는 반도체 소자 및 그 제조방법
JP2001053150A (ja) * 1999-08-12 2001-02-23 Hitachi Ltd 半導体集積回路装置の製造方法
JP2001053151A (ja) 1999-08-17 2001-02-23 Hitachi Ltd 半導体集積回路装置およびその製造方法
US6323121B1 (en) * 2000-05-12 2001-11-27 Taiwan Semiconductor Manufacturing Company Fully dry post-via-etch cleaning method for a damascene process
US6342448B1 (en) * 2000-05-31 2002-01-29 Taiwan Semiconductor Manufacturing Company Method of fabricating barrier adhesion to low-k dielectric layers in a copper damascene process

Also Published As

Publication number Publication date
KR20020087338A (ko) 2002-11-22
JP2002343859A (ja) 2002-11-29
US6780769B2 (en) 2004-08-24
KR100426904B1 (ko) 2004-04-14
US20030205825A1 (en) 2003-11-06
US6624516B2 (en) 2003-09-23
US20020171149A1 (en) 2002-11-21

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