TW548515B - Aqueous alkaline developer and use and preparation of the same - Google Patents

Aqueous alkaline developer and use and preparation of the same Download PDF

Info

Publication number
TW548515B
TW548515B TW089104373A TW89104373A TW548515B TW 548515 B TW548515 B TW 548515B TW 089104373 A TW089104373 A TW 089104373A TW 89104373 A TW89104373 A TW 89104373A TW 548515 B TW548515 B TW 548515B
Authority
TW
Taiwan
Prior art keywords
substrate
aqueous alkaline
scope
alkyl ether
item
Prior art date
Application number
TW089104373A
Other languages
English (en)
Chinese (zh)
Inventor
Randy D Redd
Ralph R Dammel
John P Sagan
Mark A Spak
Original Assignee
Motorola Inc
Clariant Int Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc, Clariant Int Ltd filed Critical Motorola Inc
Application granted granted Critical
Publication of TW548515B publication Critical patent/TW548515B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Catalysts (AREA)
  • Coating With Molten Metal (AREA)
  • Physical Vapour Deposition (AREA)
  • Load-Engaging Elements For Cranes (AREA)
TW089104373A 1999-03-12 2000-04-13 Aqueous alkaline developer and use and preparation of the same TW548515B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/268,438 US6372414B1 (en) 1999-03-12 1999-03-12 Lift-off process for patterning fine metal lines

Publications (1)

Publication Number Publication Date
TW548515B true TW548515B (en) 2003-08-21

Family

ID=23023010

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089104373A TW548515B (en) 1999-03-12 2000-04-13 Aqueous alkaline developer and use and preparation of the same

Country Status (11)

Country Link
US (1) US6372414B1 (https=)
EP (1) EP1166182B1 (https=)
JP (1) JP4495863B2 (https=)
KR (1) KR100593653B1 (https=)
CN (1) CN1175320C (https=)
AT (1) ATE310975T1 (https=)
DE (1) DE60024244T2 (https=)
HK (1) HK1044824B (https=)
MY (1) MY122595A (https=)
TW (1) TW548515B (https=)
WO (1) WO2000055691A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0213695D0 (en) * 2002-06-14 2002-07-24 Filtronic Compound Semiconduct Fabrication method
KR100708790B1 (ko) * 2003-05-19 2007-04-18 다이요 잉키 세이조 가부시키가이샤 릴리프 이미지의 형성 방법 및 형성된 패턴
KR100707236B1 (ko) * 2004-01-15 2007-04-13 마쯔시다덴기산교 가부시키가이샤 금속 패턴 및 그 제조 방법
JP2005353763A (ja) * 2004-06-09 2005-12-22 Matsushita Electric Ind Co Ltd 露光装置及びパターン形成方法
JP4793927B2 (ja) * 2005-11-24 2011-10-12 東京エレクトロン株式会社 基板処理方法及びその装置
KR100817101B1 (ko) * 2007-04-04 2008-03-26 한국과학기술원 폴리머 또는 레지스트 패턴과 이를 이용한 몰드, 금속 박막패턴, 금속 패턴 및 이들의 형성 방법
CN109406586A (zh) * 2017-08-18 2019-03-01 蓝思科技（长沙）有限公司 碳纳米管传感器的制作方法及其用途
CN111522208A (zh) * 2020-05-06 2020-08-11 南京南大光电工程研究院有限公司 使用正胶做掩膜进行金属薄膜剥离的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961100A (en) * 1974-09-16 1976-06-01 Rca Corporation Method for developing electron beam sensitive resist films
JPS6032047A (ja) * 1983-08-02 1985-02-19 Matsushita Electric Ind Co Ltd 微細加工方法
JPH063549B2 (ja) 1984-12-25 1994-01-12 株式会社東芝 ポジ型フォトレジスト現像液組成物
JPS6419344A (en) 1986-01-14 1989-01-23 Sumitomo Chemical Co Organic alkali developing solution for positive type photoresist
DE3705896A1 (de) 1986-02-24 1987-08-27 Tokyo Ohka Kogyo Co Ltd Verfahren zur herstellung eines fotoresistmusters auf einer substratflaeche und ein dafuer geeignetes schaumentfernungsmittel
US5069996A (en) * 1989-07-24 1991-12-03 Ocg Microelectronic Materials, Inc. Process for developing selected positive photoresists
US5236810A (en) * 1989-10-03 1993-08-17 Kansai Paint Co., Ltd. Process for preparing printed-circuit board
US5436114A (en) * 1989-12-06 1995-07-25 Hitachi, Ltd. Method of optical lithography with super resolution and projection printing apparatus
US5252436A (en) 1989-12-15 1993-10-12 Basf Aktiengesellschaft Process for developing a positive-working photoresist containing poly(p-hydroxystyrene) and sulfonium salt with an aqueous developer containing basic organic compounds
JPH03235322A (ja) * 1990-02-13 1991-10-21 Nec Corp レジストパターン形成方法
JP3235322B2 (ja) 1994-02-04 2001-12-04 株式会社デンソー ドア装置
JPH09147429A (ja) * 1995-11-20 1997-06-06 Sony Corp スタンパの製造方法
JP2950407B2 (ja) * 1996-01-29 1999-09-20 東京応化工業株式会社 電子部品製造用基材の製造方法

Also Published As

Publication number Publication date
ATE310975T1 (de) 2005-12-15
KR100593653B1 (ko) 2006-06-30
EP1166182B1 (en) 2005-11-23
KR20010113735A (ko) 2001-12-28
DE60024244D1 (de) 2005-12-29
JP4495863B2 (ja) 2010-07-07
HK1044824A1 (en) 2002-11-01
MY122595A (en) 2006-04-29
WO2000055691A1 (en) 2000-09-21
EP1166182A1 (en) 2002-01-02
HK1044824B (zh) 2005-04-08
CN1175320C (zh) 2004-11-10
CN1343326A (zh) 2002-04-03
JP2002539505A (ja) 2002-11-19
DE60024244T2 (de) 2006-08-03
US6372414B1 (en) 2002-04-16

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees