JP4495863B2 - 半微量幅金属線を形成するのに適するパターンの製造方法 - Google Patents

半微量幅金属線を形成するのに適するパターンの製造方法 Download PDF

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Publication number
JP4495863B2
JP4495863B2 JP2000605859A JP2000605859A JP4495863B2 JP 4495863 B2 JP4495863 B2 JP 4495863B2 JP 2000605859 A JP2000605859 A JP 2000605859A JP 2000605859 A JP2000605859 A JP 2000605859A JP 4495863 B2 JP4495863 B2 JP 4495863B2
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JP
Japan
Prior art keywords
substrate
stage
soaking solution
photoresist layer
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2000605859A
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English (en)
Japanese (ja)
Other versions
JP2002539505A5 (https=
JP2002539505A (ja
Inventor
レッド・ランディ・ディー
ダンメル・ラルフ・アール
サガン・ジョン・ピー
スパック・マーク・エイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
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Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
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Publication of JP2002539505A5 publication Critical patent/JP2002539505A5/ja
Application granted granted Critical
Publication of JP4495863B2 publication Critical patent/JP4495863B2/ja
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Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Catalysts (AREA)
  • Coating With Molten Metal (AREA)
  • Physical Vapour Deposition (AREA)
  • Load-Engaging Elements For Cranes (AREA)
JP2000605859A 1999-03-12 2000-03-03 半微量幅金属線を形成するのに適するパターンの製造方法 Expired - Lifetime JP4495863B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/268,438 1999-03-12
US09/268,438 US6372414B1 (en) 1999-03-12 1999-03-12 Lift-off process for patterning fine metal lines
PCT/EP2000/001831 WO2000055691A1 (en) 1999-03-12 2000-03-03 Method for producing a pattern suitable for forming sub-micron width metal lines

Publications (3)

Publication Number Publication Date
JP2002539505A JP2002539505A (ja) 2002-11-19
JP2002539505A5 JP2002539505A5 (https=) 2007-04-05
JP4495863B2 true JP4495863B2 (ja) 2010-07-07

Family

ID=23023010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000605859A Expired - Lifetime JP4495863B2 (ja) 1999-03-12 2000-03-03 半微量幅金属線を形成するのに適するパターンの製造方法

Country Status (11)

Country Link
US (1) US6372414B1 (https=)
EP (1) EP1166182B1 (https=)
JP (1) JP4495863B2 (https=)
KR (1) KR100593653B1 (https=)
CN (1) CN1175320C (https=)
AT (1) ATE310975T1 (https=)
DE (1) DE60024244T2 (https=)
HK (1) HK1044824B (https=)
MY (1) MY122595A (https=)
TW (1) TW548515B (https=)
WO (1) WO2000055691A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0213695D0 (en) * 2002-06-14 2002-07-24 Filtronic Compound Semiconduct Fabrication method
KR100708790B1 (ko) * 2003-05-19 2007-04-18 다이요 잉키 세이조 가부시키가이샤 릴리프 이미지의 형성 방법 및 형성된 패턴
KR100707236B1 (ko) * 2004-01-15 2007-04-13 마쯔시다덴기산교 가부시키가이샤 금속 패턴 및 그 제조 방법
JP2005353763A (ja) * 2004-06-09 2005-12-22 Matsushita Electric Ind Co Ltd 露光装置及びパターン形成方法
JP4793927B2 (ja) * 2005-11-24 2011-10-12 東京エレクトロン株式会社 基板処理方法及びその装置
KR100817101B1 (ko) * 2007-04-04 2008-03-26 한국과학기술원 폴리머 또는 레지스트 패턴과 이를 이용한 몰드, 금속 박막패턴, 금속 패턴 및 이들의 형성 방법
CN109406586A (zh) * 2017-08-18 2019-03-01 蓝思科技（长沙）有限公司 碳纳米管传感器的制作方法及其用途
CN111522208A (zh) * 2020-05-06 2020-08-11 南京南大光电工程研究院有限公司 使用正胶做掩膜进行金属薄膜剥离的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961100A (en) * 1974-09-16 1976-06-01 Rca Corporation Method for developing electron beam sensitive resist films
JPS6032047A (ja) * 1983-08-02 1985-02-19 Matsushita Electric Ind Co Ltd 微細加工方法
JPH063549B2 (ja) 1984-12-25 1994-01-12 株式会社東芝 ポジ型フォトレジスト現像液組成物
JPS6419344A (en) 1986-01-14 1989-01-23 Sumitomo Chemical Co Organic alkali developing solution for positive type photoresist
DE3705896A1 (de) 1986-02-24 1987-08-27 Tokyo Ohka Kogyo Co Ltd Verfahren zur herstellung eines fotoresistmusters auf einer substratflaeche und ein dafuer geeignetes schaumentfernungsmittel
US5069996A (en) * 1989-07-24 1991-12-03 Ocg Microelectronic Materials, Inc. Process for developing selected positive photoresists
US5236810A (en) * 1989-10-03 1993-08-17 Kansai Paint Co., Ltd. Process for preparing printed-circuit board
US5436114A (en) * 1989-12-06 1995-07-25 Hitachi, Ltd. Method of optical lithography with super resolution and projection printing apparatus
US5252436A (en) 1989-12-15 1993-10-12 Basf Aktiengesellschaft Process for developing a positive-working photoresist containing poly(p-hydroxystyrene) and sulfonium salt with an aqueous developer containing basic organic compounds
JPH03235322A (ja) * 1990-02-13 1991-10-21 Nec Corp レジストパターン形成方法
JP3235322B2 (ja) 1994-02-04 2001-12-04 株式会社デンソー ドア装置
JPH09147429A (ja) * 1995-11-20 1997-06-06 Sony Corp スタンパの製造方法
JP2950407B2 (ja) * 1996-01-29 1999-09-20 東京応化工業株式会社 電子部品製造用基材の製造方法

Also Published As

Publication number Publication date
ATE310975T1 (de) 2005-12-15
KR100593653B1 (ko) 2006-06-30
EP1166182B1 (en) 2005-11-23
KR20010113735A (ko) 2001-12-28
DE60024244D1 (de) 2005-12-29
HK1044824A1 (en) 2002-11-01
MY122595A (en) 2006-04-29
WO2000055691A1 (en) 2000-09-21
EP1166182A1 (en) 2002-01-02
HK1044824B (zh) 2005-04-08
CN1175320C (zh) 2004-11-10
TW548515B (en) 2003-08-21
CN1343326A (zh) 2002-04-03
JP2002539505A (ja) 2002-11-19
DE60024244T2 (de) 2006-08-03
US6372414B1 (en) 2002-04-16

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