TW529086B - Chemical vapor deposition method - Google Patents

Chemical vapor deposition method Download PDF

Info

Publication number
TW529086B
TW529086B TW091102487A TW91102487A TW529086B TW 529086 B TW529086 B TW 529086B TW 091102487 A TW091102487 A TW 091102487A TW 91102487 A TW91102487 A TW 91102487A TW 529086 B TW529086 B TW 529086B
Authority
TW
Taiwan
Prior art keywords
space
film
material gas
holes
plasma
Prior art date
Application number
TW091102487A
Other languages
English (en)
Chinese (zh)
Inventor
Sang-Tae Ko
Katsuhisa Yuda
Original Assignee
Anelva Corp
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp, Nec Corp filed Critical Anelva Corp
Application granted granted Critical
Publication of TW529086B publication Critical patent/TW529086B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Crystal (AREA)
  • Formation Of Insulating Films (AREA)
TW091102487A 2001-02-15 2002-02-08 Chemical vapor deposition method TW529086B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001038631A JP2002246381A (ja) 2001-02-15 2001-02-15 Ｃｖｄ方法

Publications (1)

Publication Number Publication Date
TW529086B true TW529086B (en) 2003-04-21

Family

ID=18901567

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091102487A TW529086B (en) 2001-02-15 2002-02-08 Chemical vapor deposition method

Country Status (5)

Country Link
US (1) US6537911B2 (enExample)
JP (1) JP2002246381A (enExample)
KR (2) KR20020067647A (enExample)
CN (1) CN1210764C (enExample)
TW (1) TW529086B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3991315B2 (ja) * 2002-09-17 2007-10-17 キヤノンアネルバ株式会社 薄膜形成装置及び方法
JP4051619B2 (ja) * 2002-09-17 2008-02-27 キヤノンアネルバ株式会社 シリコン酸化膜作製方法
US7023010B2 (en) * 2003-04-21 2006-04-04 Nanodynamics, Inc. Si/C superlattice useful for semiconductor devices
WO2006043433A1 (ja) * 2004-10-19 2006-04-27 Mitsubishi Denki Kabushiki Kaisha プラズマｃｖｄ装置
US20060223788A1 (en) * 2005-03-29 2006-10-05 Cathcart Clifton H Analgesic composition for topical use
CN101647103B (zh) * 2007-03-27 2012-05-23 佳能安内华股份有限公司 真空处理装置
JP5276101B2 (ja) * 2008-06-24 2013-08-28 東芝三菱電機産業システム株式会社 窒素ラジカル発生器、窒化処理装置、窒素ラジカルの発生方法および窒化処理方法
US8580993B2 (en) * 2008-11-12 2013-11-12 Air Products And Chemicals, Inc. Amino vinylsilane precursors for stressed SiN films
US8889235B2 (en) 2009-05-13 2014-11-18 Air Products And Chemicals, Inc. Dielectric barrier deposition using nitrogen containing precursor
US10039157B2 (en) 2014-06-02 2018-07-31 Applied Materials, Inc. Workpiece processing chamber having a rotary microwave plasma source
US10269541B2 (en) * 2014-06-02 2019-04-23 Applied Materials, Inc. Workpiece processing chamber having a thermal controlled microwave window
US11244808B2 (en) 2017-05-26 2022-02-08 Applied Materials, Inc. Monopole antenna array source for semiconductor process equipment
KR102670124B1 (ko) * 2018-05-03 2024-05-28 주성엔지니어링(주) 기판 처리 장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2506539B2 (ja) * 1992-02-27 1996-06-12 株式会社ジーティシー 絶縁膜の形成方法
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5865896A (en) * 1993-08-27 1999-02-02 Applied Materials, Inc. High density plasma CVD reactor with combined inductive and capacitive coupling
US6151071A (en) * 1996-02-29 2000-11-21 Eastman Kodak Company Circuit for generating control signals
US6125859A (en) * 1997-03-05 2000-10-03 Applied Materials, Inc. Method for improved cleaning of substrate processing systems
US6063441A (en) * 1997-12-02 2000-05-16 Applied Materials, Inc. Processing chamber and method for confining plasma
JP2000345349A (ja) * 1999-06-04 2000-12-12 Anelva Corp Ｃｖｄ装置
JP2001023918A (ja) * 1999-07-08 2001-01-26 Nec Corp 半導体薄膜形成装置

Also Published As

Publication number Publication date
KR20090092257A (ko) 2009-08-31
US6537911B2 (en) 2003-03-25
US20020110998A1 (en) 2002-08-15
KR20020067647A (ko) 2002-08-23
CN1372302A (zh) 2002-10-02
JP2002246381A (ja) 2002-08-30
CN1210764C (zh) 2005-07-13

Similar Documents

Publication Publication Date Title
CN100568463C (zh) 薄膜形成方法
TW539762B (en) Thin film forming method and thin film forming apparatus
KR100440632B1 (ko) Ｃｖｄ 장치의 클리닝 방법
CN100416775C (zh) 氧化硅膜制作方法
TW527436B (en) Chemical vapor deposition system
KR101012295B1 (ko) 박막형성 장치 및 방법
JP4151862B2 (ja) Ｃｖｄ装置
US5525159A (en) Plasma process apparatus
KR101097625B1 (ko) 진공 처리 장치
KR20090092257A (ko) Ｃｖｄ 방법
JPH0684888A (ja) 絶縁膜の形成方法
JP2004336019A (ja) 成膜方法、半導体素子の形成方法、半導体素子、表示装置の形成方法及び表示装置
JP2001520457A (ja) 膜堆積用プラズマの２周波数励起
CN103155103A (zh) 等离子体处理装置
JP3254298B2 (ja) サンプル処理用のプラズマ装置および機械
TW307027B (en) Process for reducing circuit damage during pecvd in single wafer pecvd system
KR19990088375A (ko) 박막형성장치
JP4051619B2 (ja) シリコン酸化膜作製方法
JPH0790589A (ja) シリコン酸化膜の形成方法
JP4650919B2 (ja) Ｃｖｄ装置
JP2002170820A (ja) 薄膜トランジスタの製造方法およびそれに用いられるプラズマ処理装置
JP2002057150A (ja) 薄膜形成装置
JP2001345315A (ja) 薄膜製造方法
JPH0891987A (ja) プラズマ化学蒸着装置
JPS60258914A (ja) プラズマｃｖｄ装置

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent