TW529080B - Reflection and refraction optical system and exposure device having this system - Google Patents
Reflection and refraction optical system and exposure device having this system Download PDFInfo
- Publication number
- TW529080B TW529080B TW090126179A TW90126179A TW529080B TW 529080 B TW529080 B TW 529080B TW 090126179 A TW090126179 A TW 090126179A TW 90126179 A TW90126179 A TW 90126179A TW 529080 B TW529080 B TW 529080B
- Authority
- TW
- Taiwan
- Prior art keywords
- optical system
- lens
- reticle
- refracting
- imaging optical
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0892—Catadioptric systems specially adapted for the UV
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0836—Catadioptric systems using more than three curved mirrors
- G02B17/0844—Catadioptric systems using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000322068 | 2000-10-23 | ||
JP2001003200 | 2001-01-11 | ||
JP2001309516A JP4245286B2 (ja) | 2000-10-23 | 2001-10-05 | 反射屈折光学系および該光学系を備えた露光装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW529080B true TW529080B (en) | 2003-04-21 |
Family
ID=27345004
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW090126179A TW529080B (en) | 2000-10-23 | 2001-10-23 | Reflection and refraction optical system and exposure device having this system |
Country Status (8)
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8208199B2 (en) | 2004-01-14 | 2012-06-26 | Carl Zeiss Smt Gmbh | Catadioptric projection objective |
US8289619B2 (en) | 2004-01-14 | 2012-10-16 | Carl Zeiss Smt Gmbh | Catadioptric projection objective |
US8363315B2 (en) | 2004-04-08 | 2013-01-29 | Carl Zeiss Smt Gmbh | Catadioptric projection objective with mirror group |
US8913316B2 (en) | 2004-05-17 | 2014-12-16 | Carl Zeiss Smt Gmbh | Catadioptric projection objective with intermediate images |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6995930B2 (en) | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
TW538256B (en) * | 2000-01-14 | 2003-06-21 | Zeiss Stiftung | Microlithographic reduction projection catadioptric objective |
JP2004514943A (ja) | 2000-11-28 | 2004-05-20 | カール・ツアイス・エスエムテイ・アーゲー | 157nmリソグラフィ用の反射屈折投影系 |
DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
DE10316428A1 (de) * | 2003-04-08 | 2004-10-21 | Carl Zeiss Smt Ag | Katadioptrisches Reduktionsobjektiv |
KR101163435B1 (ko) | 2003-04-09 | 2012-07-13 | 가부시키가이샤 니콘 | 노광 방법 및 장치, 그리고 디바이스 제조 방법 |
US7348575B2 (en) * | 2003-05-06 | 2008-03-25 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
JP4706171B2 (ja) * | 2003-10-24 | 2011-06-22 | 株式会社ニコン | 反射屈折投影光学系、露光装置及び露光方法 |
KR101647934B1 (ko) * | 2003-05-06 | 2016-08-11 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치 및 노광 방법 |
US6995833B2 (en) * | 2003-05-23 | 2006-02-07 | Canon Kabushiki Kaisha | Projection optical system, exposure apparatus, and device manufacturing method |
US7085075B2 (en) * | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
TW201834020A (zh) | 2003-10-28 | 2018-09-16 | 日商尼康股份有限公司 | 照明光學裝置、曝光裝置、曝光方法以及元件製造方法 |
TWI512335B (zh) | 2003-11-20 | 2015-12-11 | 尼康股份有限公司 | 光束變換元件、光學照明裝置、曝光裝置、以及曝光方法 |
US7466489B2 (en) * | 2003-12-15 | 2008-12-16 | Susanne Beder | Projection objective having a high aperture and a planar end surface |
JP5102492B2 (ja) | 2003-12-19 | 2012-12-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結晶素子を有するマイクロリソグラフィー投影用対物レンズ |
CN102169226B (zh) * | 2004-01-14 | 2014-04-23 | 卡尔蔡司Smt有限责任公司 | 反射折射投影物镜 |
US7463422B2 (en) * | 2004-01-14 | 2008-12-09 | Carl Zeiss Smt Ag | Projection exposure apparatus |
TWI412067B (zh) | 2004-02-06 | 2013-10-11 | 尼康股份有限公司 | 偏光變換元件、光學照明裝置、曝光裝置以及曝光方法 |
US7400381B2 (en) * | 2004-05-26 | 2008-07-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1754110B1 (en) | 2004-06-10 | 2008-07-30 | Carl Zeiss SMT AG | Projection objective for a microlithographic projection exposure apparatus |
DE602005018648D1 (de) | 2004-07-14 | 2010-02-11 | Zeiss Carl Smt Ag | Katadioptrisches projektionsobjektiv |
JP5600128B2 (ja) * | 2004-07-14 | 2014-10-01 | カール・ツァイス・エスエムティー・ゲーエムベーハー | カタディオプトリック投影対物系 |
JP2006119244A (ja) * | 2004-10-20 | 2006-05-11 | Canon Inc | 反射屈折型投影光学系及び当該反射屈折型投影光学系を有する露光装置、デバイス製造方法 |
WO2006081991A1 (en) * | 2005-02-03 | 2006-08-10 | Carl Zeiss Smt Ag | Catadioptric projection objective with intermediate image |
US7324185B2 (en) | 2005-03-04 | 2008-01-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2187251B1 (en) * | 2005-03-31 | 2016-06-01 | KLA-Tencor Technologies Corporation | Small ultra-high NA catadioptric objective using a Mangin mirror |
JP2006309220A (ja) * | 2005-04-29 | 2006-11-09 | Carl Zeiss Smt Ag | 投影対物レンズ |
US8248577B2 (en) | 2005-05-03 | 2012-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP3232270A3 (en) | 2005-05-12 | 2017-12-13 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
DE102005024290A1 (de) * | 2005-05-27 | 2006-11-30 | Carl Zeiss Smt Ag | Abbildungssystem, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage |
KR101763092B1 (ko) * | 2005-06-02 | 2017-07-28 | 칼 짜이스 에스엠티 게엠베하 | 마이크로리소그래피 투영 대물 렌즈 |
EP1746463A2 (de) | 2005-07-01 | 2007-01-24 | Carl Zeiss SMT AG | Verfahren zum Korrigieren eines lithographischen Projektionsobjektivs und derartiges Projektionsobjektiv |
US7738188B2 (en) * | 2006-03-28 | 2010-06-15 | Carl Zeiss Smt Ag | Projection objective and projection exposure apparatus including the same |
US7920338B2 (en) | 2006-03-28 | 2011-04-05 | Carl Zeiss Smt Gmbh | Reduction projection objective and projection exposure apparatus including the same |
EP1852745A1 (en) | 2006-05-05 | 2007-11-07 | Carl Zeiss SMT AG | High-NA projection objective |
EP1890191A1 (en) | 2006-08-14 | 2008-02-20 | Carl Zeiss SMT AG | Catadioptric projection objective with pupil mirror |
WO2008087827A1 (ja) * | 2007-01-16 | 2008-07-24 | Nikon Corporation | 結像光学系、露光装置、およびデバイス製造方法 |
US7929114B2 (en) | 2007-01-17 | 2011-04-19 | Carl Zeiss Smt Gmbh | Projection optics for microlithography |
JP5165700B2 (ja) | 2007-02-28 | 2013-03-21 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 瞳補正を有する反射屈折投影対物系 |
US20080259304A1 (en) * | 2007-04-20 | 2008-10-23 | Asml Netherlands B.V. | Lithographic apparatus and method |
JP5267029B2 (ja) | 2007-10-12 | 2013-08-21 | 株式会社ニコン | 照明光学装置、露光装置及びデバイスの製造方法 |
US8379187B2 (en) | 2007-10-24 | 2013-02-19 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9116346B2 (en) | 2007-11-06 | 2015-08-25 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
DE102009011328A1 (de) * | 2009-03-05 | 2010-08-19 | Carl Zeiss Smt Ag | Abbildende Optik |
JP2011049571A (ja) * | 2010-09-24 | 2011-03-10 | Nikon Corp | 反射屈折投影光学系、露光装置及び露光方法 |
JP2012073632A (ja) * | 2011-11-18 | 2012-04-12 | Nikon Corp | 反射屈折投影光学系、露光装置及び露光方法 |
JP5567098B2 (ja) * | 2012-10-31 | 2014-08-06 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 瞳補正を有する反射屈折投影対物系 |
DE102013105586B4 (de) * | 2013-05-30 | 2023-10-12 | Carl Zeiss Ag | Vorrichtung zur Abbildung einer Probe |
CN104062746B (zh) * | 2014-06-23 | 2016-08-24 | 中国科学院光电技术研究所 | 一种大数值孔径的折反射浸没投影光学系统 |
US9424388B2 (en) * | 2014-12-17 | 2016-08-23 | International Business Machines Corporation | Dividing lithography exposure fields to improve semiconductor fabrication |
CN105807410B (zh) * | 2014-12-31 | 2018-11-09 | 上海微电子装备(集团)股份有限公司 | 一种基于高数值孔径的折反射式投影物镜 |
JP2015132843A (ja) * | 2015-03-02 | 2015-07-23 | 株式会社ニコン | 投影光学系、露光装置、露光方法、およびデバイス製造方法 |
JP6358242B2 (ja) * | 2015-11-30 | 2018-07-18 | 株式会社ニコン | 露光装置、露光方法、デバイス製造方法およびパターン形成方法 |
JP2016136273A (ja) * | 2016-03-07 | 2016-07-28 | 株式会社ニコン | 投影光学系、露光装置、露光方法、およびデバイス製造方法 |
CN108152940B (zh) * | 2016-12-05 | 2021-04-27 | 佳能株式会社 | 反射折射光学系统、照明光学系统、曝光装置 |
JP2018010303A (ja) * | 2017-08-03 | 2018-01-18 | 株式会社ニコン | 露光装置およびデバイス製造方法 |
CN107582020B (zh) * | 2017-10-20 | 2019-05-31 | 视微影像(河南)科技有限公司 | 一种眼科成像诊断系统 |
JP2019082711A (ja) * | 2019-01-15 | 2019-05-30 | 株式会社ニコン | 投影光学系、露光装置、露光方法、及びデバイス製造方法 |
JP2019091057A (ja) * | 2019-01-15 | 2019-06-13 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3787035T2 (de) * | 1986-03-12 | 1994-03-10 | Matsushita Electric Ind Co Ltd | Optisches Projektionssystem für Präzisionskopien. |
GB2197962A (en) * | 1986-11-10 | 1988-06-02 | Compact Spindle Bearing Corp | Catoptric reduction imaging apparatus |
FR2617985B1 (fr) * | 1987-07-10 | 1991-09-13 | Centre Nat Rech Scient | Dispositif optique de collection de lumiere formant objectif a miroir de grande ouverture numerique |
US5094539A (en) * | 1988-03-07 | 1992-03-10 | Hitachi, Ltd. | Method of making semiconductor integrated circuit, pattern detecting method, and system for semiconductor alignment and reduced stepping exposure for use in same |
DE69121133T2 (de) | 1990-04-20 | 1996-12-12 | Dainippon Screen Mfg | Objektivlinsensystem zur Anwendung in einem Mikroskop |
US5734496A (en) * | 1991-06-03 | 1998-03-31 | Her Majesty The Queen In Right Of New Zealand | Lens system |
JP3339592B2 (ja) * | 1993-03-12 | 2002-10-28 | 株式会社ニコン | 反射屈折投影光学系、並びに露光方法及び装置 |
JP3635684B2 (ja) * | 1994-08-23 | 2005-04-06 | 株式会社ニコン | 反射屈折縮小投影光学系、反射屈折光学系、並びに投影露光方法及び装置 |
US5636066A (en) * | 1993-03-12 | 1997-06-03 | Nikon Corporation | Optical apparatus |
JPH09311278A (ja) * | 1996-05-20 | 1997-12-02 | Nikon Corp | 反射屈折光学系 |
US5309541A (en) * | 1993-04-16 | 1994-05-03 | Laser Power Corporation | Flexible light conduit |
US5515207A (en) * | 1993-11-03 | 1996-05-07 | Nikon Precision Inc. | Multiple mirror catadioptric optical system |
US5559338A (en) * | 1994-10-04 | 1996-09-24 | Excimer Laser Systems, Inc. | Deep ultraviolet optical imaging system for microlithography and/or microfabrication |
IL113350A (en) * | 1995-04-12 | 1998-06-15 | State Rafaelel Ministry Of Def | Catadioptric optics working staring detector system |
US6512631B2 (en) * | 1996-07-22 | 2003-01-28 | Kla-Tencor Corporation | Broad-band deep ultraviolet/vacuum ultraviolet catadioptric imaging system |
US5815310A (en) * | 1995-12-12 | 1998-09-29 | Svg Lithography Systems, Inc. | High numerical aperture ring field optical reduction system |
JPH1010430A (ja) * | 1996-06-19 | 1998-01-16 | Nikon Corp | 2回結像光学系 |
US6157498A (en) * | 1996-06-19 | 2000-12-05 | Nikon Corporation | Dual-imaging optical system |
US5999310A (en) * | 1996-07-22 | 1999-12-07 | Shafer; David Ross | Ultra-broadband UV microscope imaging system with wide range zoom capability |
US5717518A (en) * | 1996-07-22 | 1998-02-10 | Kla Instruments Corporation | Broad spectrum ultraviolet catadioptric imaging system |
US6169627B1 (en) * | 1996-09-26 | 2001-01-02 | Carl-Zeiss-Stiftung | Catadioptric microlithographic reduction objective |
DE19639586A1 (de) * | 1996-09-26 | 1998-04-02 | Zeiss Carl Fa | Katadioptrisches Mikrolithographie-Reduktionsobjektiv |
KR100597775B1 (ko) * | 1997-12-26 | 2006-07-10 | 가부시키가이샤 니콘 | 투영노광장치 및 노광방법 |
US6097537A (en) * | 1998-04-07 | 2000-08-01 | Nikon Corporation | Catadioptric optical system |
US6213610B1 (en) * | 1998-09-21 | 2001-04-10 | Nikon Corporation | Catoptric reduction projection optical system and exposure apparatus and method using same |
JP2000098228A (ja) * | 1998-09-21 | 2000-04-07 | Nikon Corp | 投影露光装置及び露光方法、並びに反射縮小投影光学系 |
JP2000100694A (ja) * | 1998-09-22 | 2000-04-07 | Nikon Corp | 反射縮小投影光学系、該光学系を備えた投影露光装置および該装置を用いた露光方法 |
EP1059550A4 (en) | 1998-12-25 | 2003-03-19 | Nikon Corp | REFRACTION REFLECTION IMAGE FORMING SYSTEM AND PROJECTION EXPOSURE APPARATUS INCLUDING THE OPTICAL SYSTEM |
DE59914179D1 (de) | 1999-02-15 | 2007-03-22 | Zeiss Carl Smt Ag | Mikrolithographie-Reduktionsobjektiveinrichtung sowie Projektionsbelichtungsanlage |
JP4717974B2 (ja) | 1999-07-13 | 2011-07-06 | 株式会社ニコン | 反射屈折光学系及び該光学系を備える投影露光装置 |
EP1093021A3 (en) * | 1999-10-15 | 2004-06-30 | Nikon Corporation | Projection optical system as well as equipment and methods making use of said system |
JP2001185480A (ja) * | 1999-10-15 | 2001-07-06 | Nikon Corp | 投影光学系及び該光学系を備える投影露光装置 |
US6600608B1 (en) | 1999-11-05 | 2003-07-29 | Carl-Zeiss-Stiftung | Catadioptric objective comprising two intermediate images |
TW538256B (en) * | 2000-01-14 | 2003-06-21 | Zeiss Stiftung | Microlithographic reduction projection catadioptric objective |
JP2001228401A (ja) | 2000-02-16 | 2001-08-24 | Canon Inc | 投影光学系、および該投影光学系による投影露光装置、デバイス製造方法 |
US6842298B1 (en) * | 2000-09-12 | 2005-01-11 | Kla-Tencor Technologies Corporation | Broad band DUV, VUV long-working distance catadioptric imaging system |
JP2004514943A (ja) * | 2000-11-28 | 2004-05-20 | カール・ツアイス・エスエムテイ・アーゲー | 157nmリソグラフィ用の反射屈折投影系 |
-
2001
- 2001-10-05 JP JP2001309516A patent/JP4245286B2/ja not_active Expired - Fee Related
- 2001-10-23 WO PCT/JP2001/009266 patent/WO2002035273A1/ja active Application Filing
- 2001-10-23 AU AU2001295994A patent/AU2001295994A1/en not_active Abandoned
- 2001-10-23 KR KR1020037005588A patent/KR100799418B1/ko not_active IP Right Cessation
- 2001-10-23 US US10/399,716 patent/US7030965B2/en not_active Expired - Fee Related
- 2001-10-23 TW TW090126179A patent/TW529080B/zh active
- 2001-10-23 EP EP01976807A patent/EP1336887A4/en not_active Withdrawn
- 2001-10-23 CN CNB018178618A patent/CN100460921C/zh not_active Expired - Fee Related
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8416490B2 (en) | 2004-01-14 | 2013-04-09 | Carl Zeiss Smt Gmbh | Catadioptric projection objective |
US8804234B2 (en) | 2004-01-14 | 2014-08-12 | Carl Zeiss Smt Gmbh | Catadioptric projection objective including an aspherized plate |
US8289619B2 (en) | 2004-01-14 | 2012-10-16 | Carl Zeiss Smt Gmbh | Catadioptric projection objective |
US8339701B2 (en) | 2004-01-14 | 2012-12-25 | Carl Zeiss Smt Gmbh | Catadioptric projection objective |
US8355201B2 (en) | 2004-01-14 | 2013-01-15 | Carl Zeiss Smt Gmbh | Catadioptric projection objective |
US9772478B2 (en) | 2004-01-14 | 2017-09-26 | Carl Zeiss Smt Gmbh | Catadioptric projection objective with parallel, offset optical axes |
US8208198B2 (en) | 2004-01-14 | 2012-06-26 | Carl Zeiss Smt Gmbh | Catadioptric projection objective |
US8730572B2 (en) | 2004-01-14 | 2014-05-20 | Carl Zeiss Smt Gmbh | Catadioptric projection objective |
US8208199B2 (en) | 2004-01-14 | 2012-06-26 | Carl Zeiss Smt Gmbh | Catadioptric projection objective |
US8908269B2 (en) | 2004-01-14 | 2014-12-09 | Carl Zeiss Smt Gmbh | Immersion catadioptric projection objective having two intermediate images |
US8363315B2 (en) | 2004-04-08 | 2013-01-29 | Carl Zeiss Smt Gmbh | Catadioptric projection objective with mirror group |
US8913316B2 (en) | 2004-05-17 | 2014-12-16 | Carl Zeiss Smt Gmbh | Catadioptric projection objective with intermediate images |
US9019596B2 (en) | 2004-05-17 | 2015-04-28 | Carl Zeiss Smt Gmbh | Catadioptric projection objective with intermediate images |
US9134618B2 (en) | 2004-05-17 | 2015-09-15 | Carl Zeiss Smt Gmbh | Catadioptric projection objective with intermediate images |
US9726979B2 (en) | 2004-05-17 | 2017-08-08 | Carl Zeiss Smt Gmbh | Catadioptric projection objective with intermediate images |
Also Published As
Publication number | Publication date |
---|---|
CN1535392A (zh) | 2004-10-06 |
KR20030045130A (ko) | 2003-06-09 |
US7030965B2 (en) | 2006-04-18 |
AU2001295994A1 (en) | 2002-05-06 |
JP4245286B2 (ja) | 2009-03-25 |
CN100460921C (zh) | 2009-02-11 |
EP1336887A4 (en) | 2008-07-09 |
KR100799418B1 (ko) | 2008-01-30 |
JP2002277742A (ja) | 2002-09-25 |
US20040130806A1 (en) | 2004-07-08 |
WO2002035273A1 (fr) | 2002-05-02 |
EP1336887A1 (en) | 2003-08-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW529080B (en) | Reflection and refraction optical system and exposure device having this system | |
KR100387003B1 (ko) | 투영광학시스템,투영노광장치,노광방법,및노광장치제조방법 | |
JP4292497B2 (ja) | 投影光学系、露光装置および露光方法 | |
KR100380267B1 (ko) | 노광장치 | |
JP3396935B2 (ja) | 投影光学系及び投影露光装置 | |
EP1434093A2 (en) | Catoptric projection system, exposure apparatus and device fabrication method | |
JP2004333761A (ja) | 反射屈折型の投影光学系、露光装置、および露光方法 | |
TWI237307B (en) | Optical projection system, light exposing apparatus and light exposing method | |
JP4780364B2 (ja) | 反射屈折光学系および該光学系を備えた露光装置 | |
TW559885B (en) | Projection optical system and exposure device having the projection optical system | |
JP4706171B2 (ja) | 反射屈折投影光学系、露光装置及び露光方法 | |
TW508655B (en) | Relay imaging optical system, and illumination optical device and exposure device having the optical system | |
JP5165700B2 (ja) | 瞳補正を有する反射屈折投影対物系 | |
JP2002082285A (ja) | 反射屈折光学系および該光学系を備えた露光装置 | |
JP3339592B2 (ja) | 反射屈折投影光学系、並びに露光方法及び装置 | |
WO2005001544A1 (ja) | 光学ユニット、結像光学系、結像光学系の収差調整方法、投影光学系、投影光学系の製造方法、露光装置、および露光方法 | |
JP2005195713A (ja) | 投影光学系、露光装置、および露光方法 | |
JP4239212B2 (ja) | 投影光学系、露光装置および露光方法 | |
TW530335B (en) | Image-forming optical system and exposure device equipped therewith | |
JP5786919B2 (ja) | 投影光学系、露光装置及び露光方法 | |
KR0129841B1 (ko) | 노광장비의 광학계(Optics System for Exposure Unit) | |
JP2010232242A (ja) | 反射型投影光学系及び露光装置 | |
JP2004354555A (ja) | 反射屈折型の投影光学系、露光装置および露光方法 | |
JP5567098B2 (ja) | 瞳補正を有する反射屈折投影対物系 | |
JP2011049571A (ja) | 反射屈折投影光学系、露光装置及び露光方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent |