TW518770B - Light-emitting-diode-chip on the basis of InGaN and its method of manufacturing - Google Patents
Light-emitting-diode-chip on the basis of InGaN and its method of manufacturing Download PDFInfo
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- TW518770B TW518770B TW090116119A TW90116119A TW518770B TW 518770 B TW518770 B TW 518770B TW 090116119 A TW090116119 A TW 090116119A TW 90116119 A TW90116119 A TW 90116119A TW 518770 B TW518770 B TW 518770B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 3
- 229910052738 indium Inorganic materials 0.000 claims description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 11
- 229910002704 AlGaN Inorganic materials 0.000 claims description 8
- 229920006395 saturated elastomer Polymers 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910018540 Si C Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910021124 PdAg Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
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- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
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- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Description
518770 五、發明説明（1 ) 、 本發明是有關一種以InGaN爲主的發光二極體晶片 與一種方法用於製造以InGaN爲主之發光二極體晶 在與本發明有關的以InGaN爲主的發光二極體晶片 之下，在基本上包括所有的發光二極體晶片，其光線發 射區域具有I n G aN或使用氮化物以及以此爲主的混合 結晶，像是例如G a ( A 1，I n) N。 以I n G aN爲主之發光二極體晶片例如由S h u j i Nakamura, Gerhard Fasal 戶斤著之’’The Blue Laser Diode”（由在 Berlin Heidelberg 之 Springer 出版社於 1997年出版）之209頁之所述而爲熟知。 本發明之目的在於說明一種在一開始所提到特性之 發光二極體晶片其具有儘可能高的光線強度供使用。 此外說明一種方法以製造此種發光二極體晶片。 此首先所提到的目的是以具有申請專利範圍第1項 特徵之發光二極體晶片達成。有利的其他發展是申請 專利範圍第2至4項之標的◦此其次所提到的目的是 藉由根據申請專利範圍第5項之方法而達成。此方法 較佳之其他的發展是申請專利範圍第6至8‘項之標 的。 在根據本發明之發光二極體晶片中，是在基板上成長 磊晶層序列，其具有以InGaN爲主的光線發射主動結 構。在基板與光線發射主動結構之間配置緩衝（Buffer) 層，其由一或多層所構成。須選擇此緩衝層的材料，使 518770 五、發明説明（3 ) 在根據本發明的方法中，在基板上沈積發光磊晶層序 歹0，其具有以InGaN爲主的發光主動結構。 在此光線發射主動結構成長前，在基板上成長緩衝層 或緩衝層序列，其成長表面用於此光線發射主動結構之 成長，而在其成長溫度中並未拉緊或是稍微呈現張力。 以此方法有利地達成此主動結構關於其成成長平面 具有側面彼此相鄰配置之銦（I η)飽含區，在其中銦的含 量高於此主動結構其餘區域中銦的含量。 在此方法尤其較佳的實施形式中，產生具有I n G aN量 子井之單量子井結構或多量子井的結構，並且使用以 S i C爲主的基板。 作爲緩衝層較佳首先在基板上以磊晶的方式沈積數 百奈米（nm)厚之AlGaN:Si層，在此之上以磊晶方式成 長GaN:Si層。此GaN:Si層的厚度是在1微米至3微 米（// m)之間，並且在其表面上沈積光線發射磊晶層序 列。 作爲嘉晶方法較佳適用”有機金屬氣相嘉晶 法 ”（MOVPE:Metal Organic Vapour Phase Epitaxy)。 本發明其他有利之配置與發展是由此在以下與第1 a 至2圖有關之說明的實施例中產生。 圖式之簡單說明 第1 a圖以槪要圖式說明經由第一實施例之截面。 第1 b圖以槪要圖式說明此第一實施例之有利之接觸 設計與有利的安裝方法。 518770 五、發明説明（4 ) 第2圖以槪要圖式說明經由第二實施例之截面，包括 其有利的安裝方法。 在這些不同實施例的圖中相同或相同作用的組成成 份各自具有其參考號碼。 在第1 a圖的發光二極體晶片1中，在s i C基板2上 配置光線發射主動結構4 ◦其在本例中具有I n G a N之 單量子井7。 此光線發射主動結構4包括多個關於成長平面橫向 相鄰配置之銦飽含（e n r i c h)區5，中此銦含量高於此主動 結構4之其餘區域中之銦含量。在此銦飽含區5中之 銦含量例如是一直至4 0 %。 在此光線發射主動結構4之上成長一層薄的p-導電 摻雜AlGaN磊晶層8,以及一層例如2 00奈米（nm)厚的 p-導電摻雜GaN層9 ◦ 同樣地可以例如一個以InGaN爲主的光線發射主動結 構4具有雙異質結構或是多量子井結構（MQWiMulti-Quantum well)其設有 多個量 子井。 此SiC基板是導電並且對於此由磊晶層序列3所發 出的光線至少部份通過。 ‘ 在基板2與主動結構4之間是緩衝層2 0 ,其包含幾 百奈（nm)厚的AlGaN:Si層10,與在成長方向中配置於 GaN: Si層1 1之後。此GaN: Si層1 1的厚度在1微米 (//m)至3微米之間，並且其背向遠離基板2之表面在 當製造晶片1時形成爲成長表面6，用於長成此以 518770 五、發明説明（5 )
InGaN爲主的光線發射主動結構4。 在根據第1 b圖之晶片之接觸設計與安裝方式中，（此 關於其磊晶層結構3對應於第la圖之晶片1),是在p-導電摻雜G aN -層9上塗佈—層可連接之p _接觸層 12。其例如是由銀（Ag)，由PtAg及/或PdAg合金所構 成，或是例如由、透光第一層與反射第二層所組成。在其 次所提到的替代方案中，此第一層例如在基本上由P t 及/或Pd構成，並且第二層^例如在基本上是由銀（Ag)、 金（Αι〇及/或鋁（A1)或介電反射層所構成。 在其背向遠離磊晶層序列3之面1 5上，此S i C基板 2設有接觸金屬化件1 3，其只將此主要表面1 5之一部 份覆蓋，並且形成爲至佈線連接之連接墊（bond pad) ◦ 晶片1是借助於小片接合（D i e ) -連接以其p -面，即 以其P -接觸層1 2安裝在電性連接框架丨4 ( L e a d框架） 的晶片安裝表面1 9上。此n-接觸金屬化件丨3是經由 連接線1 7而與連接框架1 4之連接部份1 8連接。 光線由晶片1之耦合而出是經由S i C基板2之主要 表面1 5之裸露區域以及經由晶片側面6而實施。 :選擇式地，晶片1具有一個在磊晶層序列成長之後變薄 之SiC基板2。同樣地，基板2在磊晶層序列3成長之 後完全由此序列去除，因而產生所謂的薄層L E D。 明顯地此根據本發明的晶片1還可以以其基板面， 即在所謂的”up side up”安裝中，裝設於電性連接框架 1 4之晶片安裝表面丨3之上。此接觸設計當然適合其 -7- 518770 五、發明説明（7) 試驗1在此情況下是晶片，其中此以I n G aN爲主的層 之成長表面6在成長的溫度中強烈緊密地拉緊。 在試驗2中此以InGaN爲主之層之成長表面6在此 成長的溫度中沒有或只有稍微的拉緊。 晶片的分析顯不，試驗1在主動層序列之不同的嘉晶 層之間非常光滑平坦的界面，並且具有大約1 5 %之均勻 之銦（In)含量，而試驗2中，在主動層序列之不同的磊晶 層之間的界面是非常粗糙，並且此結構具有點狀局部增 加的晶格常數5其與局部增加之直至40%之銦含量相對 應。 曰式驗.2藏不每女裝時在5毫米（ΠΜ )之徑向結構中在 2 〇毫安（m A)之向前電流中相對於試驗1明顯提高的功 率，在同時將此尖峰波長移至較大的波長。 此根據上述實施例之本發明之說明是被理解爲明顯 地不作爲對本發明的限制。更正確地說，本發明尤其是 在所有的發光二極體晶片中可使用，其中此主動區以 InGaN爲主。 符號說明 1…發光二極體晶片 ‘ 2…基板 4…主動層 5…In-飽含區 7…單量子井 9 ... G a N 層
518770 五、發明説明（8 ) 1 0 …AlGaN : S i 層 11.. .GaN:Si 層 1 4 ...連接框架 1 5 ...主要表面 18.. .連接部份 -10-
Claims (1)
- 518770 讲年/月β曰雙正L_Γ ___ 六、申請專利範圍 第90116119號「以InGaN爲主之發光二極體晶片與其製造方 法」專利案 （91年1月修正） 六、申請專利範圍 1· 一種發光二極體晶片（1),其中 在基板（2)上沈積磊晶層序列（3)其具有以InGaN爲主光線 發射主動結構（4)，並且在基板（2)與主動結構（4)之間配置 緩衝層或緩衝層序列（20)，其特徵爲， 其中須選擇緩衝層或緩衝層序列（20)之材料，使得其成 長表面（6)用於主動結構（4)之成長，而在其成長的溫度中 、並未拉緊或稍微呈現張力， 並且此主動結構（4)具有關於彼此橫向毗鄰地配置於成 長平面之銦（In)飽含區（5)，其中此銦含量較主動結構（4)中 之其他區域爲高。 2. 如申請專利範圍第1項之發光二極體晶片（1)，其中此基板 (2)在基本上是由SiC構成。 3. 如申請專利範圍第1或2項之發光二極體晶片（1)，其中主 動結構（4)具有單量子井結構或多量子井結構，其中此或至 少一個量子井包含銦（In)飽含區。 4. 如申請專利範圍第1或2項之發光二極體晶片（1)，其中此 緩衝層序列（20)具有數百奈米（nm)厚的AlGaN:Si層（9)，其 在成長方向中配置於GaN: Si層（10)之後，其具有1微米U m)至3微米之厚度，並且其表面形成爲用於光線發射磊晶 層序列成長之成長表面（6)。 5. 如申請專利範圍第3項之發光二極體晶片（1)，其中此緩衝 六、申請專利範圍 層序列（20)具有數百奈米（nm)厚的AlGaN:Si層（9)，其在成 長方向中配置於GaN:Si層（10)之後，其具有1微米（/zm)至 3微米之厚度，並且其表面形成爲用於光線發射磊晶層序 列成長之成長表面（6)。 6_ —種用於製造以InGaN爲主之發光二極體構件之方法，其 特徵爲， 在基板（2)上沈積磊晶層序列（3)，其具有以InGaN爲主 之光線發射主動結構（4)，其中在光線發射主動結構（4)成 長之前，在基板（2)上成長緩衝層或緩衝層序列（20)，其成長 表面用於光線發射主動結構（4)之成長，而在其成長溫度中 並未拉緊或稍微呈現張力。 7. 如申請專利範圍第6項之方法，其中 產生具有InGaN量子井之多量子井結構作爲主動結構 (4)。 8. 如申請專利範圍第6或7項之方法，其中 使用SiC基板作爲基板（2)。 9. 如申請專利範圍第6或7項之方法，其中 在基板（2)上首先沈積一個數百奈米（nm)厚之AlGaN:Si 層，在此上成長GaN:Si層，其具有1微米（/zm)至3微米之 厚度，並且在其表面上沈積光線發射主動結構（4)。 10. 如申請專利範圍第8項之方法，其中 在基板（2)上首先沈積一個數百奈米（nm)厚之AlGaN:Si 層，在此上成長GaN: Si層，其具有1微米（/zm)至3微米之 厚度，並且在其表面上沈積光線發射主動結構（4)。 -2-
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10032246A DE10032246A1 (de) | 2000-07-03 | 2000-07-03 | Lumineszenzdiodenchip auf der Basis von InGaN und Verfahren zu dessen Herstellung |
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| Publication Number | Publication Date |
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| TW518770B true TW518770B (en) | 2003-01-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090116119A TW518770B (en) | 2000-07-03 | 2001-07-02 | Light-emitting-diode-chip on the basis of InGaN and its method of manufacturing |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7375377B2 (zh) |
| EP (1) | EP1299909B1 (zh) |
| JP (1) | JP2004503096A (zh) |
| DE (1) | DE10032246A1 (zh) |
| TW (1) | TW518770B (zh) |
| WO (1) | WO2002003479A1 (zh) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| DE10253161B4 (de) * | 2002-09-12 | 2010-05-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterchips mit verbesserten Oberflächeneigenschaften |
| DE102005016592A1 (de) * | 2004-04-14 | 2005-11-24 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
| KR100513923B1 (ko) * | 2004-08-13 | 2005-09-08 | 재단법인서울대학교산학협력재단 | 질화물 반도체층을 성장시키는 방법 및 이를 이용하는 질화물 반도체 발광소자 |
| CN101385145B (zh) | 2006-01-05 | 2011-06-08 | 伊鲁米特克斯公司 | 用于引导来自led的光的分立光学装置 |
| CN101553928B (zh) | 2006-10-02 | 2011-06-01 | 伊鲁米特克有限公司 | Led系统和方法 |
| EP2240968A1 (en) | 2008-02-08 | 2010-10-20 | Illumitex, Inc. | System and method for emitter layer shaping |
| DE102008054219A1 (de) * | 2008-10-31 | 2010-05-06 | Osram Opto Semiconductors Gmbh | Organisches strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines organischen strahlungsemittierenden Bauelements |
| TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
| DE102009013909A1 (de) | 2009-03-19 | 2010-09-23 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
| US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
| US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
| US8436362B2 (en) * | 2009-08-24 | 2013-05-07 | Micron Technology, Inc. | Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods |
| KR101122020B1 (ko) * | 2010-03-17 | 2012-03-09 | 한국광기술원 | 다중발광소자 및 이를 제조하는 방법 |
| DE102013112490A1 (de) | 2013-11-13 | 2015-05-13 | Osram Opto Semiconductors Gmbh | Halbleiterschichtenfolge und Verfahren zu deren Herstellung |
| CN117712249B (zh) * | 2024-02-05 | 2024-05-28 | 江西兆驰半导体有限公司 | 一种发光二极管外延片及制备方法 |
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| JP3658112B2 (ja) * | 1995-11-06 | 2005-06-08 | 日亜化学工業株式会社 | 窒化物半導体レーザダイオード |
| JP3904709B2 (ja) * | 1997-02-21 | 2007-04-11 | 株式会社東芝 | 窒化物系半導体発光素子およびその製造方法 |
| US6121634A (en) | 1997-02-21 | 2000-09-19 | Kabushiki Kaisha Toshiba | Nitride semiconductor light emitting device and its manufacturing method |
| JP4166885B2 (ja) * | 1998-05-18 | 2008-10-15 | 富士通株式会社 | 光半導体装置およびその製造方法 |
| US6285698B1 (en) * | 1998-09-25 | 2001-09-04 | Xerox Corporation | MOCVD growth of InGaN quantum well laser structures on a grooved lower waveguiding layer |
-
2000
- 2000-07-03 DE DE10032246A patent/DE10032246A1/de not_active Ceased
-
2001
- 2001-06-13 EP EP01949261.0A patent/EP1299909B1/de not_active Expired - Lifetime
- 2001-06-13 US US10/332,244 patent/US7375377B2/en not_active Expired - Lifetime
- 2001-06-13 WO PCT/DE2001/002190 patent/WO2002003479A1/de active Application Filing
- 2001-06-13 JP JP2002507458A patent/JP2004503096A/ja active Pending
- 2001-07-02 TW TW090116119A patent/TW518770B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP1299909A1 (de) | 2003-04-09 |
| DE10032246A1 (de) | 2002-01-17 |
| US20040026699A1 (en) | 2004-02-12 |
| JP2004503096A (ja) | 2004-01-29 |
| EP1299909B1 (de) | 2018-01-24 |
| WO2002003479A1 (de) | 2002-01-10 |
| US7375377B2 (en) | 2008-05-20 |
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